CN104842073A - Laser etching method and device of film solar cell - Google Patents
Laser etching method and device of film solar cell Download PDFInfo
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- CN104842073A CN104842073A CN201410053331.1A CN201410053331A CN104842073A CN 104842073 A CN104842073 A CN 104842073A CN 201410053331 A CN201410053331 A CN 201410053331A CN 104842073 A CN104842073 A CN 104842073A
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000010329 laser etching Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000011521 glass Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims description 60
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 238000000608 laser ablation Methods 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000002244 precipitate Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 230000005611 electricity Effects 0.000 abstract description 4
- 238000013461 design Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- -1 front electrode Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar cell etching, and discloses a laser etching method and a device of a film solar cell. The method comprises the steps of: (S1) forming the film solar cell, wherein the film solar cell comprises a glass substrate, a front electrode, a semiconductor layer and a back electrode; and (S2) adopting laser with a wavelength of 532 nm to perform the laser etching for the semiconductor layer and the back electrode through the glass substrate and the front electrode. The method can enable the film solar cell to have the cell electricity generation function and the light transmission so as to satisfy the requirements of a photovoltaic building integrated system.
Description
Technical field
The present invention relates to solar cell lithographic technique field, in particular, particularly a kind of laser etching method of thin-film solar cells and device.
Background technology
Along with the development of society, the subject matter becoming China and even the development of countries in the world man in short supply of the energy, and the environmental problem that the finiteness of the resource of fossil energy and exploitation bring seriously governs sustainable development that is economic and society.The exploitation of regenerative resource seem excellent in important.Photovoltaic generation is a kind of technology utilizing renewable resource solar energy just, and it utilizes the photovoltaic effect of interface and luminous energy is directly changed into a kind of technology of electric energy.It has safe and reliable, the advantage such as noiseless, low stain.And amorphous silicon thin-film solar cell except having abundant raw materials, economize material, low energy consumption, be convenient to large area continuous seepage, except automaticity is high, production efficiency is high, nontoxic, pollution-free and energy return period is short characteristic, also there is the characteristic that the low light level responds, the absorption coefficient of amorphous silicon material in whole visible-range, the almost order of magnitude larger than monocrystalline silicon, its Intrinsic Gettering coefficient is up to 10
5cm
-1, make non-crystal silicon solar cell its use with reality in theory in all have good adaptation to low light intensity, under the condition (sunrise sunset, cloudy, haze etc.) of scattered light, still can keep the generating capacity of some strength.And amorphous silicon thin-film solar cell has light transmission because of itself, can carry out adjusting according to Architectural Design Requirements and can coordinate various art or aesthetics design in appearance design, thin-film solar cells is made to be more suitable for photovoltaic building one (BIPV) system, it is the important application of of thin-film solar cells, how to utilize these characteristics of amorphous silicon thin-film solar cell better, not only can generate electricity but also can seem extremely important as building curtain wall.
As shown in Fig. 1 a, 1b, 1c and 1d, amorphous silicon thin-film solar cell be with glass 1 ' for substrate, be coated with trilamellar membrane altogether at glass: front electrode 2 ', a-si or u-si semiconductor layer 3 ' and back electrode 4 '.Traditional manufacturing process is cleaning front glass, electrode 2 ' before deposition, and cleaning is coated with transparent conductive oxide film (front electrode) glass, then carries out laser ablation (P1) front electrode, forms multiple sub-battery; Depositing semiconductor layers 3 ', then laser ablation (P2); Deposition back electrode 4 ', then laser ablation (P3), finally clear limit (Q in figure in 1d) again, electrode extraction, test, encapsulation etc., complete the processing to amorphous silicon thin-film solar cell.But the solar cell that this method processes only has the function of cell power generation and do not have the performance of printing opacity, the demand of photovoltaic building one (BIPV) system namely can not be met.Therefore be necessary to design a kind of new processing method.
Summary of the invention
The object of the invention is to the technical problem for existing in prior art, a kind of laser etching method of thin-film solar cells and the device that had not only had cell power generation function but also had light transmission are provided.
In order to solve problem set forth above, the technical solution used in the present invention is:
A laser etching method for thin-film solar cells, comprises the following steps,
Step S1. forms the step of thin-film solar cells, and described thin-film solar cells comprises glass substrate, front electrode, semiconductor layer and back electrode;
Step S2. adopts wavelength to be carry out laser ablation to semiconductor layer and back electrode after the laser light glass substrate of 532nm and front electrode.
According to a preferred embodiment of the invention: described thin-film solar cells is amorphous silicon thin-film solar cell or cadmium telluride CdTe thin film solar cell.
According to a preferred embodiment of the invention: in described step S2, described laser vertical carries out laser ablation processing in the surface of thin-film solar cells.
According to a preferred embodiment of the invention: in described step S2, described laser etches many lines be arranged in order on semiconductor layer and back electrode.
According to a preferred embodiment of the invention: in described step S2, the power of described laser is 2-3W, and frequency is 5-30KHz, and etching speed is 800-1500mm/s, and the line thickness of laser ablation is 100-200 μm.
According to a preferred embodiment of the invention: described step S1 specifically comprises the following steps,
Step S11. adopts the method deposition of transparent conductive film on the glass substrate of magnetron sputtering, electrode before being formed;
Step S12. adopts the method for laser to carry out dielectric etch to front electrode, forms multiple sub-battery;
The method that step S13. using plasma strengthens chemical vapour deposition (CVD) precipitates plural layers on the front electrode, forms semiconductor layer;
Step S14. adopts the method for laser to carry out dielectric etch to semiconductor layer;
Step S15. adopts the method for physical vapour deposition (PVD) to be coated with at least one deck metal material on the semiconductor layer, forms back electrode;
Step S16. adopts the method for laser to carry out dielectric etch to back electrode, forms internal series-connection integrated circuit, completes the processing to thin-film solar cells.
According to a preferred embodiment of the invention: before described step S11, also comprise the step of glass substrate being cleaned and drying; And the step also comprised between described step S12 and S13 cleaning in the surface of front electrode and the groove after etching.
According to a preferred embodiment of the invention: also comprise after described step S16,
Step S17. carries out the step on the clear limit of laser to amorphous silicon thin-film solar cell.
According to a preferred embodiment of the invention: the thickness of the front electrode in described step S11 is 1000nm, and the layer semiconductor thickness in described step S13 is 1.5 μm, and the back electrode thickness in described step S15 is 1.0 μm.
The present invention also provides a kind of device realizing the laser etching method of above-mentioned thin-film solar cells, comprises,
Forming machine, for the formation of the thin-film solar cells with glass substrate, front electrode, semiconductor layer and back electrode;
And the laser machine corresponding with forming machine, after sending laser light glass substrate and front electrode that a wavelength is 532nm, laser ablation is carried out to semiconductor layer and back electrode.
Compared with prior art, beneficial effect of the present invention is:
1, the present invention adopts wavelength to be carry out laser ablation to semiconductor layer and back electrode after the laser light glass substrate of 532nm and front electrode, define multiple lines, make thin-film solar cells not only have the electricity generate function of battery but also have light transmission, meet the demand of photovoltaic building one (BIPV) system;
2, the present invention adopts the noncontact procession of laser, and the product processed is stable, flexible, various, and can apply by heavy industrialization;
3, the present invention adopt laser scoring the smooth of the edge and non-flanged projection, be conducive to follow-up encapsulation;
4, the bottom of the present invention after laser scoring is without residue, can not cause the short circuit of battery, also can not affect the transformation efficiency of battery;
5, the present invention is in Laser Processing, and process parameters range is wide, and focusing is flexibly, simple to operate.
Accompanying drawing explanation
In Fig. 1,1a, 1b, 1c and 1d are the flow sheet of this amorphous silicon thin-film solar cell of the prior art.
The structure chart on the surface that the laser etching method that in Fig. 2,2a is thin-film solar cells of the present invention etches, Fig. 2 b is the enlarged drawing at A place in Fig. 2 a, and Fig. 2 c is the structure chart of etched thin-film solar cells.
Fig. 3 is the flow chart of the laser etching method of thin-film solar cells of the present invention.
Fig. 4 is the particular flow sheet of step S1 in Fig. 3 of the present invention.
Detailed description of the invention
For the ease of understanding the present invention, below with reference to relevant drawings, the present invention is described more fully.Preferred embodiment of the present invention is given in accompanying drawing.But the present invention can realize in many different forms, is not limited to embodiment described herein.On the contrary, provide the object of these embodiments be make the understanding of disclosure of the present invention more comprehensively thorough.
Unless otherwise defined, all technology used herein and scientific terminology are identical with belonging to the implication that those skilled in the art of the present invention understand usually.The object of term used in the description of the invention herein just in order to describe specific embodiment, is not intended to be restriction the present invention.
Fig. 3 and Figure 4 shows that the laser etching method of a kind of thin-film solar cells provided by the invention, and the structure chart of thin-film solar cells please refer to Fig. 2, this laser etching method comprises:
First step S1: the step forming thin-film solar cells, described thin-film solar cells comprises shown in glass substrate 1, front electrode 2, semiconductor layer 3 and back electrode 4(Fig. 2 c), specifically comprise following several steps:
1, first utilize semicon industry common detergents, the ultra-white float glass substrate 1 of cleaning 1.3m × 1.1m, removes greasy filth, the dust on substrate 1 surface, with purified rinse water totally and dry.
2, step S11, adopts method deposition of transparent conductive film on glass substrate 1 of magnetron sputtering, forms the front electrode 2 that thickness is about 1000nm;
3, step S12, adopts the method for laser to carry out dielectric etch to front electrode 2, forms multiple sub-battery, carry out dielectric etch under namely the glass substrate 1 being coated with transparent conductive film (front electrode) 2 being placed in laser P1 board;
4, the film after above-mentioned etching is cleaned, remove the residue remaining in surface and cutting, thus obtain better insulating properties;
5, step S13, the method that using plasma strengthens chemical vapour deposition (CVD) precipitates the different amorphous silicon membrane adulterated of multilayer on front electrode 2, and form semiconductor layer 3, its thickness is 1.5 μm, namely has the battery of a fixed structure;
6, step S14, the method of laser is adopted to carry out dielectric etch to semiconductor layer 3, etch under namely the glass substrate 1 having plated amorphous silicon membrane being placed in laser P2 board, etched away by amorphous silicon membrane and do not hurt semiconductor layer 3, the connection be mainly preserved for by semiconductor layer 3 between battery electrode is used;
7, step S15, adopts the method for physical vapour deposition (PVD) on semiconductor layer 3, be coated with at least one deck metal material, forms back electrode 4, namely collect electric charge, the wherein thickness of back electrode 4 about about 1.0 μm as battery;
8, step S16, the method of laser is adopted to carry out dielectric etch to back electrode 4, form internal series-connection integrated circuit, the film etching back electrode is carried out under namely the glass substrate 1 having plated back electrode 4 being placed in laser P3 board, nesa coating (front electrode 2) can not be hurt, namely complete the processing to amorphous silicon thin-film solar cell;
9, step S17, carries out the step on the clear limit of laser to amorphous silicon thin-film solar cell, all retes by battery circumferential are removed clean, serve insulation buffer action.
Second step S2: adopt wavelength to be carry out laser ablation to semiconductor layer 3 and back electrode 4 after the laser light glass substrate 1 of 532nm and front electrode 2 again, in process, laser effectively can not hurt front electrode 2 through glass substrate 1 and front electrode 2, thus obtain the smooth of the edge, without projection, without residue bottom groove, the effect that printing opacity evenly waits.
In the present invention, the thin-film solar cells adopted is amorphous silicon thin-film solar cell or cadmium telluride CdTe thin film solar cell; And in the present embodiment, select amorphous silicon thin-film solar cell to be further introduced.
Concrete, in above-mentioned second step, laser ablation processing is carried out on the surface that laser is perpendicular to amorphous silicon thin-film solar cell, and laser is sent by laser BIPV machine.
Concrete, in above-mentioned second step, laser etches many lines X be arranged in order on semiconductor layer 3 and back electrode 4, such lines X can make whole thin-film solar cells have stronger light transmission in use, and in etching process, the lines of laser ablation need perpendicular to sub-battery.
Concrete, in above-mentioned second step, the power of the laser adopted is 2-3W, frequency is 5-30KHz, etching speed is 800-1500mm/s, and the line thickness of laser ablation is 100-200 μm, under this condition any light transmittance of available silicon film solar batteries, as 10%, 15% and 20% etc.
3rd step: the solar cell extraction electrode of laser ablation (BIPV etching), test and encapsulation will be completed.
The present invention also provides a kind of device realizing the laser etching method of above-mentioned thin-film solar cells, comprises forming machine, for the formation of the thin-film solar cells with glass substrate 1, front electrode 2, semiconductor layer 3 and back electrode 4; And the laser machine corresponding with forming machine, after sending laser light glass substrate 1 and front electrode 2 that a wavelength is 532nm, laser ablation is carried out to semiconductor layer 3 and back electrode 4.
Concrete, above-mentioned forming machine namely above laser P1 board, laser P2 board and the laser P3 board introduced formed, and above-mentioned laser machine employing is laser BIPV machine.
The lithographic technique that present invention employs based on laser system can make thin-film solar cells not only have the electricity generate function of battery but also have light transmission, meet the demand of photovoltaic building one (BIPV) system, have employed that to have precision high, speed is fast, and automaticity is high, the laser processing mode of the features such as high stability, make product more stable, flexibly, various, and can the advantage such as heavy industrialization application.
Above-described embodiment is the present invention's preferably embodiment; but embodiments of the present invention are not restricted to the described embodiments; change, the modification done under other any does not deviate from Spirit Essence of the present invention and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (10)
1. a laser etching method for thin-film solar cells, is characterized in that: the method comprises the following steps,
Step S1. forms the step of thin-film solar cells, and described thin-film solar cells comprises glass substrate (1), front electrode (2), semiconductor layer (3) and back electrode (4);
Step S2. adopts wavelength to be carry out laser ablation to semiconductor layer (3) and back electrode (4) after the laser light glass substrate (1) of 532nm and front electrode (2).
2. the laser etching method of thin-film solar cells according to claim 1, is characterized in that: described thin-film solar cells is amorphous silicon thin-film solar cell or cadmium telluride CdTe thin film solar cell.
3. the laser etching method of thin-film solar cells according to claim 2, is characterized in that: in described step S2, and described laser vertical carries out laser ablation processing in the surface of thin-film solar cells.
4. the laser etching method of thin-film solar cells according to claim 3, is characterized in that: in described step S2, and described laser is at semiconductor layer (3) and the upper etching of back electrode (4) many lines be arranged in order.
5. the laser etching method of thin-film solar cells according to claim 4, it is characterized in that: in described step S2, the power of described laser is 2-3W, and frequency is 5-30KHz, etching speed is 800-1500mm/s, and the line thickness of laser ablation is 100-200 μm.
6. the laser etching method of thin-film solar cells according to claim 3, is characterized in that: described step S1 specifically comprises the following steps,
Step S11. adopts the method for magnetron sputtering in the upper deposition of transparent conductive film of glass substrate (1), electrode (2) before being formed;
Step S12. adopts the method for laser to carry out dielectric etch to front electrode (2), forms multiple sub-battery;
The method that step S13. using plasma strengthens chemical vapour deposition (CVD) precipitates plural layers on front electrode (2), forms semiconductor layer (3);
Step S14. adopts the method for laser to carry out dielectric etch to semiconductor layer (3);
Step S15. adopts the method for physical vapour deposition (PVD) to be coated with at least one deck metal material on semiconductor layer (3), forms back electrode (4);
Step S16. adopts the method for laser to carry out dielectric etch to back electrode (4), forms internal series-connection integrated circuit, completes the processing to thin-film solar cells.
7. the laser etching method of thin-film solar cells according to claim 6, is characterized in that: before described step S11, also comprise the step of cleaning glass substrate (1) and drying; And the step also comprised between described step S12 and S13 cleaning in the surface of front electrode (2) and the groove after etching.
8. the laser etching method of thin-film solar cells according to claim 6, is characterized in that: also comprise after described step S16,
Step S17. carries out the step on the clear limit of laser to amorphous silicon thin-film solar cell.
9. the laser etching method of thin-film solar cells according to claim 6, it is characterized in that: the thickness of the front electrode (2) in described step S11 is 1000nm, semiconductor layer (3) thickness in described step S13 is 1.5 μm, and back electrode (4) thickness in described step S15 is 1.0 μm.
10. realize a device for the laser etching method of the thin-film solar cells described in any one of claim 1-9, it is characterized in that: this device comprises,
Forming machine, for the formation of the thin-film solar cells with glass substrate (1), front electrode (2), semiconductor layer (3) and back electrode (4);
And the laser machine corresponding with forming machine, after sending laser light glass substrate (1) and front electrode (2) that a wavelength is 532nm, laser ablation is carried out to semiconductor layer (3) and back electrode (4).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594300A (en) * | 2021-07-29 | 2021-11-02 | 成都中建材光电材料有限公司 | Laser scribing method for light-transmitting power generation glass |
| CN114156364A (en) * | 2021-11-15 | 2022-03-08 | 邯郸中建材光电材料有限公司 | Preparation method of CdTe power generation glass and charging control system |
| CN117226279A (en) * | 2023-11-13 | 2023-12-15 | 杭州众能光电科技有限公司 | Perovskite battery laser processing device and method |
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