CN103311366B - The preparation method of silicon/crystalline silicon heterogenous joint solar cell - Google Patents
The preparation method of silicon/crystalline silicon heterogenous joint solar cell Download PDFInfo
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Abstract
The invention discloses a kind of preparation method of silicon/crystalline silicon heterogenous joint solar cell, comprise the steps: (1) cleaning, corrosion making herbs into wool; (2) Si ion and B ion implantation are carried out in the front of silicon chip, form intrinsic amorphous silicon film in front; Carry out Si ion and B ion implantation at the back side of silicon chip, form intrinsic amorphous silicon film overleaf; (3) carry out back carving to the intrinsic amorphous silicon film of silicon chip positive and negative; (4) at the amorphous thin Film layers of front side of silicon wafer depositing p-type doping; (5) at the heavily doped amorphous thin Film layers of silicon chip reverse side depositing n-type; (6) transparent conductive film layer is set at the tow sides of silicon chip; (7) silk screen printing, sinter and prepare metal electrode at silicon chip surface.Present invention obtains high-quality silicon/crystalline silicon heterogenous joint solar cell, define the crystal silicon of the integration of high-quality amorphous thin Film layers and few defect, non crystal heterogeneous agglomeration superposition interface, improve passivation effect and significantly reduce leakage current.
Description
Technical field
The present invention relates to a kind of preparation method of silicon/crystalline silicon heterogenous joint solar cell, belong to technical field of solar.
Background technology
Along with the extensive use of solar module, photovoltaic generation more and more occupies important proportion in new forms of energy, obtains develop rapidly.In current business-like solar cell product, the market share of crystalline silicon (monocrystalline and polycrystalline) solar cell is maximum, keeps the occupation rate of market of more than 85% always.Therefore, one of the crystal silicon solar energy battery of high performance-price ratio or the R&D direction of various countries researcher is researched and developed.
At present, Japanese Sanyo company produces a kind of silicon/crystalline silicon heterogenous joint solar cell.So-called heterojunction, refer to that the PN junction of battery front side is made up of amorphous silicon and n type single crystal silicon substrate, amorphous silicon layer comprises P-type non-crystalline silicon thin layer and intrinsic amorphous silicon thin layer; Then back surface field is formed by intrinsic amorphous silicon thin layer and N-type amorphous thin Film layers at cell backside.Amorphous silicon is as direct gap semiconductor material, comparatively large to the absorption coefficient of incident light, the amorphous thin Film layers of very little thickness and the incident light of Absorbable rod considerable part; Meanwhile, the energy gap of amorphous silicon is 1.7eV, and much larger than the energy gap 1.1eV of crystalline silicon, therefore, the open circuit voltage of the solar cell of heterojunction structure can be significantly higher than conventional crystalline silicon solar cell, thus brings excellent performance.The technological process that Sanyo company produces heterojunction solar battery is roughly as follows: carry out corrosion making herbs into wool after first carrying out wet chemical process cleaning to the surface of n type single crystal silicon silicon chip, forms micron order pyramid suede structure at its front and back; Then use PECVD method to deposit one deck intrinsic amorphous silicon film and one deck P-type non-crystalline silicon film formation heterojunction emitter at front side of silicon wafer, deposit one deck intrinsic amorphous silicon film and one deck heavily doped N-type amorphous silicon membrane formation back of the body electric field at silicon chip back side; Then at silicon chip tow sides deposit transparent conductive film; Finally use silk screen printing and sinter and prepare metal electrode at silicon chip surface, obtain complete silicon/crystalline silicon heterogenous joint solar cell.
But in above processing step, the wet-chemical cleaning of the silicon chip surface of the first step is very crucial.This is because next use the thickness of the Multi-layer amorphous silicon thin film of PECVD deposition all very little, for nanoscale, so require very high to the clean-up performance of silicon chip surface, any impurity or dust granule all can become the fault of construction of heterojunction, have a strong impact on the interface state density of battery, affect the open circuit voltage of battery.Therefore, current industrial general employing multiple tracks chemical solution and the treatment fluid mode of repeatedly cleaning.But this method not only causes cost to raise, and operation is tediously long, and effect cannot be guaranteed, and also creates the environmental problems such as liquid waste processing.In addition, adopt in the process of PECVD sedimentation structure heterojunction, easily cause point discharge, affect amorphous silicon membrane quality, greatly reduce yields.
Therefore, develop a kind of preparation method of silicon/crystalline silicon heterogenous joint solar cell, to prepare high-quality silicon/crystalline silicon heterogenous joint solar cell, there is positive realistic meaning.
Summary of the invention
The object of the invention is to provide a kind of silicon/crystalline silicon heterogenous joint solar cell.
For achieving the above object, the technical solution used in the present invention is: a kind of preparation method of silicon/crystalline silicon heterogenous joint solar cell, comprises the steps:
(1) n type single crystal silicon silicon chip is carried out surface chemistry cleaning, corrosion making herbs into wool;
(2) Si ion and B ion implantation are carried out in the front of above-mentioned silicon chip, form one deck intrinsic amorphous silicon film in front;
Carry out Si ion and B ion implantation at the back side of silicon chip, form one deck intrinsic amorphous silicon film overleaf;
(3) carry out back carving to the intrinsic amorphous silicon film of above-mentioned silicon chip positive and negative;
(4) at the amorphous thin Film layers of above-mentioned front side of silicon wafer depositing p-type doping;
(5) at the heavily doped amorphous thin Film layers of above-mentioned silicon chip reverse side depositing n-type;
(6) transparent conductive film layer is set at the tow sides of above-mentioned silicon chip;
(7) silk screen printing, sinter and prepare metal electrode at silicon chip surface, silicon/crystalline silicon heterogenous joint solar cell can be obtained.
Above, in described step (1), the pyramid suede structure that corrosion making herbs into wool is formed, its pyramid size controls usually at 5 to 20 microns.Usually the matte process means such as alkaline corrosion can be used to carry out smooth rounding process when forming described pyramid suede structure, to reach the object removing burr and pinnacle.
Si ion implantation in described step (2) uses disilane or other silane based gas to make ion source.B ion implantation can use diborane, and boron trifluoride or other boron-containing gas make ion source.
Time carving technology in described step (3) can adopt plasma etching or chemical etching.
In described step (4), (5), doped amorphous silicon film layer can adopt PECVD method to deposit.
In described step (6), transparent conductive film layer can adopt the method preparation of reactive plasma deposition or magnetron sputtering, and transparent conductive film can use ITO, and one or more in IZO, IWO material deposit separately or codeposition.Preferred method is reactive plasma sedimentation, because the surface damage of the method to substrate is minimum.Described transparent conductive film layer plays antireflective effect simultaneously.
In technique scheme, the degree of depth of the ion implantation in described step (2) is 20 ~ 30nm.
In technique scheme, in described step (3), the thickness of the intrinsic amorphous silicon thin layer of Hui Kehou is 2 ~ 6nm.
In technique scheme, in described step (4), the thickness of the amorphous thin Film layers of the p-type doping of front side of silicon wafer deposition is 2 ~ 8nm.
In technique scheme, in described step (5), the thickness of the heavily doped amorphous thin Film layers of N-shaped of silicon chip back side deposition is 2 ~ 6nm.
Corresponding another kind of technical scheme, a kind of preparation method of silicon/crystalline silicon heterogenous joint solar cell, comprises the steps:
(1) p type single crystal silicon silicon chip is carried out surface chemistry cleaning, corrosion making herbs into wool;
(2) Si ion and P ion implantation are carried out in the front of above-mentioned silicon chip, form one deck intrinsic amorphous silicon film in front;
Carry out Si ion and P ion implantation at the back side of silicon chip, form one deck intrinsic amorphous silicon film overleaf;
(3) carry out back carving to the intrinsic amorphous silicon film of above-mentioned silicon chip positive and negative;
(4) at the amorphous thin Film layers of above-mentioned front side of silicon wafer depositing n-type doping;
(5) at the heavily doped amorphous thin Film layers of above-mentioned silicon chip reverse side depositing p-type;
(6) transparent conductive film layer is set at the tow sides of above-mentioned silicon chip;
(7) silk screen printing, sinter and prepare metal electrode at silicon chip surface, silicon/crystalline silicon heterogenous joint solar cell can be obtained.
Above, in described step (1), the pyramid suede structure that corrosion making herbs into wool is formed, its pyramid size controls usually at 5 to 20 microns.Usually the matte process means such as alkaline corrosion can be used to carry out smooth rounding process when forming described pyramid suede structure, to reach the object removing burr and pinnacle.
Time carving technology in described step (3) can adopt plasma etching or chemical etching.
In described step (4), (5), doped amorphous silicon film layer can adopt PECVD method to deposit.
In described step (6), transparent conductive film layer can adopt the method preparation of reactive plasma deposition or magnetron sputtering, and transparent conductive film can use ITO, and one or more in IZO, IWO material deposit separately or codeposition.Preferred method is reactive plasma sedimentation, because the surface damage of the method to substrate is minimum.Described transparent conductive film layer plays antireflective effect simultaneously.
In technique scheme, the degree of depth of the ion implantation in described step (2) is 20 ~ 30nm.
In technique scheme, in described step (3), the thickness of the intrinsic amorphous silicon thin layer of Hui Kehou is 2 ~ 6nm.
In technique scheme, in described step (4), the thickness of the amorphous thin Film layers of the N-shaped doping of front side of silicon wafer deposition is 2 ~ 8nm.
In technique scheme, in described step (5), the thickness of the heavily doped amorphous thin Film layers of p-type of silicon chip back side deposition is 2 ~ 6nm.
Due to the employing of technique scheme, compared with prior art, tool of the present invention has the following advantages:
1. this invention exploits a kind of preparation method of silicon/crystalline silicon heterogenous joint solar cell newly, use ion implantation to combine back carving technology and substitute traditional PECVD sedimentation to prepare the heterojunction structure in silicon/crystalline silicon heterogenous junction battery, define the crystal silicon of the integration of high-quality amorphous thin Film layers and few defect, non crystal heterogeneous agglomeration superposition interface, improve passivation effect and significantly reduce leakage current, obtaining high-quality silicon/crystalline silicon heterogenous joint solar cell.
2. the present invention adopts ion implantation to form intrinsic amorphous silicon thin layer, ensure that the zero-clearance between intrinsic amorphous silicon thin layer with silicon chip background contacts, has stopped the possibility that there is impurity or dust at contact-making surface; After completing ion implantation, the superficial layer that the lattice damage adopting back carving technology to get rid of to cause because of ion implantation is the most serious, effectively ensure that the quality of intrinsic amorphous silicon film.
3. method of the present invention reduces the requirement to silicon chip surface chemically cleaning significantly, therefore adopts conventional cleaning and texturing technique can obtain the hetero-junction solar cell of stay in grade, has good versatility.
4. preparation method of the present invention is simple, and cost is low, is suitable for suitability for industrialized production.
Embodiment
Below in conjunction with embodiment, the invention will be further described:
Embodiment one
A preparation method for silicon/crystalline silicon heterogenous joint solar cell, comprises the steps:
The first step, carries out chemical surface cleaning by n type single crystal silicon silicon chip;
Second step, carries out corrosion making herbs into wool to above-mentioned silicon chip, forms micron order pyramid suede structure at its front and back;
Usually the matte process means such as alkaline corrosion can be used to carry out smooth rounding process when forming described pyramid suede structure, to reach the object removing burr and pinnacle;
3rd step, adopts ion implantation, successively injects Si ion and B ion, thus respectively form the thick intrinsic amorphous silicon film of 20 ~ 30nm in silicon chip upper and lower surface at the front and back of above-mentioned silicon chip;
4th step, adopts plasma to return carving technology, carries out back carving to the double-edged intrinsic amorphous silicon film of silicon chip, thus forms the intrinsic amorphous silicon thin layer that thickness is 2 ~ 6nm;
5th step, adopts PECVD method to form at front side of silicon wafer the p-type doped amorphous silicon film layer thickness that thickness is 2 ~ 8nm; So far define at the back side of above-mentioned silicon chip
p/i/Nthe heterojunction of structure;
6th step, adopts PECVD method to form at silicon chip back side the N-shaped heavily doped amorphous silicon thin film layer thickness that thickness is 2 ~ 6nm; So far define at the back side of above-mentioned silicon chip
n/i/N+the heterojunction of structure;
7th step, utilizes reactive plasma to deposit or the method for magnetron sputtering prepares the thick transparent conductive film layer of 50 ~ 200nm on the surface of above-mentioned silicon chip; Described transparent conductive film can use ITO, and one or more in the materials such as IZO, IWO carry out codeposition;
8th step, adopts silk screen printing and sintering or electric plating method form front and back metal electrode, can obtain described silicon/crystalline silicon heterogenous joint solar cell.
Above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted.The present invention may be used for the heterojunction solar battery based on p type single crystal silicon sheet equally, or the manufacture of the various solar cell such as the silicon heterogenous battery of pedion (pedia).Those of ordinary skill in the art should be appreciated that and can modify to technical scheme of the present invention or equivalent replacement, and does not depart from the scope of technical solution of the present invention, and it all should be encompassed in the middle of right of the present invention.
Claims (10)
1. a preparation method for silicon/crystalline silicon heterogenous joint solar cell, is characterized in that, comprises the steps:
(1) n type single crystal silicon silicon chip is carried out surface chemistry cleaning, corrosion making herbs into wool;
(2) Si ion and B ion implantation are carried out in the front of above-mentioned silicon chip, form one deck intrinsic amorphous silicon film in front;
Carry out Si ion and B ion implantation at the back side of silicon chip, form one deck intrinsic amorphous silicon film overleaf;
(3) carry out back carving to the intrinsic amorphous silicon film of above-mentioned silicon chip positive and negative;
(4) at the amorphous thin Film layers of above-mentioned front side of silicon wafer depositing p-type doping;
(5) at the heavily doped amorphous thin Film layers of above-mentioned silicon chip reverse side depositing n-type;
(6) transparent conductive film layer is set at the tow sides of above-mentioned silicon chip;
(7) silk screen printing, sinter and prepare metal electrode at silicon chip surface, silicon/crystalline silicon heterogenous joint solar cell can be obtained.
2. preparation method according to claim 1, is characterized in that: the degree of depth of the ion implantation in described step (2) is 20 ~ 30nm.
3. preparation method according to claim 1, is characterized in that: in described step (3), and the thickness of the intrinsic amorphous silicon thin layer of Hui Kehou is 2 ~ 6nm.
4. preparation method according to claim 1, is characterized in that: in described step (4), the thickness of the amorphous thin Film layers of the p-type doping of front side of silicon wafer deposition is 2 ~ 8nm.
5. preparation method according to claim 1, is characterized in that: in described step (5), the thickness of the heavily doped amorphous thin Film layers of N-shaped of silicon chip back side deposition is 2 ~ 6nm.
6. a preparation method for silicon/crystalline silicon heterogenous joint solar cell, is characterized in that, comprises the steps:
(1) p type single crystal silicon silicon chip is carried out surface chemistry cleaning, corrosion making herbs into wool;
(2) Si ion and P ion implantation are carried out in the front of above-mentioned silicon chip, form one deck intrinsic amorphous silicon film in front;
Carry out Si ion and P ion implantation at the back side of silicon chip, form one deck intrinsic amorphous silicon film overleaf;
(3) carry out back carving to the intrinsic amorphous silicon film of above-mentioned silicon chip positive and negative;
(4) at the amorphous thin Film layers of above-mentioned front side of silicon wafer depositing n-type doping;
(5) at the heavily doped amorphous thin Film layers of above-mentioned silicon chip reverse side depositing p-type;
(6) transparent conductive film layer is set at the tow sides of above-mentioned silicon chip;
(7) silk screen printing, sinter and prepare metal electrode at silicon chip surface, silicon/crystalline silicon heterogenous joint solar cell can be obtained.
7. preparation method according to claim 6, is characterized in that: the degree of depth of the ion implantation in described step (2) is 20 ~ 30nm.
8. preparation method according to claim 6, is characterized in that: in described step (3), and the thickness of the intrinsic amorphous silicon thin layer of Hui Kehou is 2 ~ 6nm.
9. preparation method according to claim 6, is characterized in that: in described step (4), the thickness of the amorphous thin Film layers of the N-shaped doping of front side of silicon wafer deposition is 2 ~ 8nm.
10. preparation method according to claim 6, is characterized in that: in described step (5), the thickness of the heavily doped amorphous thin Film layers of p-type of silicon chip back side deposition is 2 ~ 6nm.
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| TW201101501A (en) * | 2009-06-24 | 2011-01-01 | Univ Nat Chunghsing | Manufacturing method of solar cell |
| CN102683492A (en) * | 2012-05-27 | 2012-09-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of double-sided back contact crystalline silicon solar cell |
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| CN102683492A (en) * | 2012-05-27 | 2012-09-19 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of double-sided back contact crystalline silicon solar cell |
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