CN111697094A - Light-transmitting double-sided cadmium telluride power generation glass and preparation method thereof - Google Patents
Light-transmitting double-sided cadmium telluride power generation glass and preparation method thereof Download PDFInfo
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- CN111697094A CN111697094A CN202010391993.5A CN202010391993A CN111697094A CN 111697094 A CN111697094 A CN 111697094A CN 202010391993 A CN202010391993 A CN 202010391993A CN 111697094 A CN111697094 A CN 111697094A
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 239000011521 glass Substances 0.000 title claims abstract description 25
- 238000010248 power generation Methods 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000010329 laser etching Methods 0.000 claims abstract description 70
- 238000010521 absorption reaction Methods 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000005538 encapsulation Methods 0.000 claims abstract description 4
- 239000012528 membrane Substances 0.000 claims abstract description 4
- 239000002313 adhesive film Substances 0.000 claims description 20
- 238000004806 packaging method and process Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000006096 absorbing agent Substances 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 229920006280 packaging film Polymers 0.000 claims 1
- 239000012785 packaging film Substances 0.000 claims 1
- 238000002202 sandwich sublimation Methods 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005092 sublimation method Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/20—Supporting structures directly fixed to an immovable object
- H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
- H02S20/26—Building materials integrated with PV modules, e.g. façade elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a light-transmitting double-sided cadmium telluride power generation glass and a preparation method thereof, which sequentially comprise the following components from top to bottom: solar cell chip I, encapsulation glued membrane and solar cell chip II, solar cell chip I and solar cell chip II all include by last under by in proper order: the solar cell chip I also comprises a plurality of parallel laser etching grooves I, and the laser etching grooves I penetrate through the window layer, the cadmium telluride absorption layer and the back electrode layer of the solar cell chip I; the solar cell chip II also comprises a plurality of parallel laser etching grooves II, and the laser etching grooves II penetrate through a window layer, a cadmium telluride absorption layer and a back electrode layer of the solar cell chip II; the laser etching groove II is perpendicular to the laser etching groove I, double-sided power generation and light transmission are achieved through the assembly, the light transmittance is high, the power generation efficiency is improved, and the production cost is reduced.
Description
Technical Field
The invention relates to the technical field of photovoltaics, in particular to light-transmitting double-sided cadmium telluride power generation glass and a preparation method thereof.
Background
The solar cell module is a device which directly converts light energy into electric energy by adopting a photovoltaic technology, wherein a cadmium telluride thin film solar cell is widely regarded as a high-efficiency and low-cost thin film cell which has a simple structure, relatively low production cost and fastest commercial development. With the development of thin-film solar cells, due to the aesthetic appearance of the thin-film solar cells, application scenes are more diversified, mainly including photovoltaic power stations, such as photovoltaic greenhouses, photovoltaic agriculture and photovoltaic building integration, and the like, and different scenes can be applied while the efficiency of the cells is improved. At present, most of existing thin-film solar cells are single-sided, the main application is a ground power station, if the thin-film solar cells are combined with agricultural buildings, the thin-film solar cells need to be made to be transparent, however, the generating efficiency is reduced after the solar cells are transparent, the larger the light transmittance is, the larger the efficiency is, and barriers exist in the wide application.
Disclosure of Invention
In view of this, the application provides a light-transmitting double-sided cadmium telluride power generation glass and a preparation method thereof, which realize double-sided power generation and light transmission, have high light transmittance, improve the power generation efficiency and reduce the production cost.
In order to solve the technical problem, the technical scheme provided by the application is that the light-transmitting double-sided cadmium telluride power generation glass sequentially comprises from top to bottom: solar cell chip I, encapsulation glued membrane and solar cell chip II, solar cell chip I and solar cell chip II all include by last under by in proper order: the solar cell chip I also comprises a plurality of parallel laser etching grooves I, and the laser etching grooves I penetrate through the window layer, the cadmium telluride absorption layer and the back electrode layer of the solar cell chip I; the solar cell chip II also comprises a plurality of parallel laser etching grooves II, and the laser etching grooves II penetrate through a window layer, a cadmium telluride absorption layer and a back electrode layer of the solar cell chip II; the laser etching groove II is perpendicular to the laser etching groove I.
Preferably, the packaging adhesive film is selected from any one of an EVA adhesive film, a POE adhesive film and a PVB adhesive film.
Preferably, the transparent conductive film layer is a TCO film, and the window layer is a cadmium sulfide window layer.
Preferably, the material of the back electrode layer is molybdenum.
Preferably, the thickness of the transparent conductive film layer is 300-400 nm, the thickness of the window layer is 50-120 nm, the thickness of the cadmium telluride absorption layer is 2-4 um, and the thickness of the back electrode layer is 150-250 nm.
Preferably, the laser etching groove I and the laser etching groove II are linear.
Preferably, the width of the laser etched groove I and the laser etched groove II is 70 μm.
The invention also provides a preparation method of the light-transmitting double-sided cadmium telluride power generation glass, which comprises the following steps:
(1) sequentially growing a transparent conductive film layer, a window layer, a cadmium telluride absorption layer and a back electrode layer on the surface of the glass substrate layer, and completing series connection by laser scribing to obtain a solar cell unit;
(2) the solar cell unit is subjected to laser etching to form a plurality of laser etching grooves I parallel to the laser scribing lines, and a solar cell chip I is obtained; the solar cell unit is subjected to laser etching to form a plurality of laser etching grooves II perpendicular to the laser scribed lines, and a solar cell chip II is obtained;
(3) and packaging the solar cell chip I and the solar cell chip II by adopting a packaging adhesive film.
Preferably, the transparent conductive film layer is grown by an LPCVD (low pressure chemical vapor deposition) method, the window layer and the cadmium telluride absorption layer are grown by a near space sublimation method, and the back electrode layer is grown by a direct-current magnetron sputtering coating.
Preferably, in the process of growing the back electrode layer by using the direct current magnetron sputtering coating, a 150mm circular target is adopted, coating is performed in an argon and nitrogen mixed atmosphere, the total pressure of the mixed gas is 0.8pa, the flow rate of the argon is 20sccm, the power is 1000W, the current is 2.2A, and the deposition rate is 1.60 nm/s.
Preferably, the argon gas is 99.99% pure and the nitrogen gas is 99.95% pure.
Preferably, the step (1) specifically comprises:
A. after a transparent conductive oxide film layer, a window layer and a cadmium telluride absorption layer are sequentially grown on a glass substrate, laser P1 scribing is carried out, the transparent conductive oxide film layer, the window layer and the cadmium telluride absorption layer are etched through the laser, and then negative photoresist is filled in a scribing groove scribed by P1;
B. after the photoresist process is finished, P2 scribing is carried out, the transparent conductive oxide film layer, the window layer and the cadmium telluride absorption layer are etched through laser, and the P2 scribing specifically comprises the following steps: etching a P2 laser scribed line at a distance of 50-100 mu m from the basic line by taking the scribed line scribed by the P1 as the basic line;
C. after the P2 scribing is finished, a back electrode layer grows on the light absorption layer, then P3 scribing is carried out, the back electrode layer and half of the film thickness of the light absorption layer are etched through laser, and the P3 scribing specifically comprises the following steps: and etching the P3 laser scribed line at a distance of 50-100 mu m from the basic line by taking the scribed line scribed by the P2 as the basic line to obtain the solar cell unit.
Preferably, the score line scored at P1, the score line scored at P2, and the score line scored at P3 are parallel.
Preferably, the step (2) specifically comprises: the solar cell unit is etched by adopting laser of 532nm to form a plurality of laser etching grooves I parallel to laser lines, and a solar cell chip I is obtained; and the solar cell unit adopts 1064nm laser etching to form a plurality of laser etching grooves II vertical to the laser lines, so as to obtain a solar cell chip II.
Preferably, the step (3) specifically comprises: packaging the solar cell chip I and the solar cell chip II by adopting a packaging adhesive film; the subassembly includes from top to bottom in proper order: the solar cell chip I, the packaging adhesive film and the solar cell chip II; the laser etching groove II is perpendicular to the laser etching groove I.
Preferably, the preparation method further comprises: and terminal boxes are arranged on two sides of the assembly.
The light-transmitting double-sided cadmium telluride power generation glass is a light-transmitting double-sided power generation cadmium telluride solar cell module.
Compared with the prior art, the detailed description of the application is as follows:
the light-transmitting double-sided cadmium telluride power generation glass sequentially comprises from top to bottom: the solar cell chip I also comprises a plurality of parallel laser etching grooves I, and the laser etching grooves I penetrate through a window layer, a cadmium telluride absorption layer and a back electrode layer of the solar cell chip I; the solar cell chip II also comprises a plurality of parallel laser etching grooves II, and the laser etching grooves II penetrate through the window layer, the cadmium telluride absorption layer and the back electrode layer of the solar cell chip II; the laser etching groove II is perpendicular to the laser etching groove I, the laser etching groove II and the laser etching groove I are staggered to form a light transmission area, double-sided power generation and light transmission are achieved, light transmittance is high, power generation efficiency is improved, and production cost is reduced. The problems of high cost and short service life of the existing method for improving the efficiency and the solar energy utilization rate by adopting the anti-reflection film coating are solved, and the problem that the single-side light transmission can greatly reduce the efficiency and further increase the power generation cost is solved.
In the preparation process of the light-transmitting double-sided cadmium telluride power generation glass, a transparent conductive film layer, a window layer, a cadmium telluride absorption layer and a back electrode layer are sequentially grown on the surface of a glass substrate layer, and are connected in series by laser scribing to obtain a solar cell unit; the solar cell unit is etched by adopting laser of 532nm to form a plurality of laser etching grooves I parallel to laser lines, and a solar cell chip I is obtained; the solar cell unit is etched by laser with the wavelength of 1064nm to form a plurality of laser etching grooves II vertical to laser lines, and a solar cell chip II is obtained; packaging the solar cell chip I and the solar cell chip II by adopting a packaging adhesive film; the subassembly includes from top to bottom in proper order: the solar cell comprises a solar cell chip I, a packaging adhesive film and a solar cell chip II; the laser etching groove II is perpendicular to the laser etching groove I, and the laser etching groove II and the laser etching groove I are staggered to form a light transmitting area, so that the preparation is simple, and the production cost is reduced.
Drawings
FIG. 1 is a schematic view of a light-transmitting double-sided cadmium telluride power generating glass of the present invention;
FIG. 2 is a schematic view of step (3) of the method for manufacturing light-transmitting double-sided cadmium telluride power generating glass according to example 1 of the present application.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following detailed description of the present invention is provided with reference to specific embodiments.
Example 1
The light-transmitting double-sided cadmium telluride power generation glass sequentially comprises from top to bottom: solar cell chip I, encapsulation glued membrane and solar cell chip II, solar cell chip I and solar cell chip II all include by last under by in proper order: the solar cell chip I also comprises a plurality of parallel laser etching grooves I, and the laser etching grooves I penetrate through the window layer, the cadmium telluride absorption layer and the back electrode layer of the solar cell chip I; the solar cell chip II also comprises a plurality of parallel laser etching grooves II, and the laser etching grooves II penetrate through a window layer, a cadmium telluride absorption layer and a back electrode layer of the solar cell chip II; the laser etching groove II is perpendicular to the laser etching groove I.
The packaging adhesive film is an EVA adhesive film, the transparent conductive film layer is a TCO film, the window layer is a cadmium sulfide window layer, and the back electrode layer is made of molybdenum.
The thickness of the transparent conductive film layer is 300-400 nm, the thickness of the window layer is 50-120 nm, the thickness of the cadmium telluride absorption layer is 2-4 um, and the thickness of the back electrode layer is 150-250 nm.
The laser etching groove I and the laser etching groove II are linear, and the width of the laser etching groove I and the width of the laser etching groove II are 70 micrometers.
The light-transmitting double-sided cadmium telluride power generation glass is a light-transmitting double-sided power generation cadmium telluride solar cell module.
The preparation method of the light-transmitting double-sided cadmium telluride power generation glass comprises the following steps:
(1) sequentially growing a transparent conductive film layer, a window layer, a cadmium telluride absorption layer and a back electrode layer on the surface of the glass substrate layer, and completing series connection by laser scribing to obtain a solar cell unit;
(2) the solar cell unit is etched by adopting laser of 532nm to form a plurality of laser etching grooves I parallel to laser lines, the distance between every two laser etching grooves I is 5.4mm, and a solar cell chip I is obtained; the solar cell unit is etched by 1064nm laser to form a plurality of laser etching grooves II perpendicular to the laser lines, and the distance between every two laser etching grooves II is 5.4mm, so that a solar cell chip II is obtained;
(3) as shown in fig. 2, the solar cell chip I and the solar cell chip II are packaged by a packaging adhesive film; the subassembly includes from top to bottom in proper order: the solar cell chip I, the packaging adhesive film and the solar cell chip II; the laser etching groove II is vertical to the laser etching groove I, and a light transmitting area is formed at the staggered part of the laser etching groove II and the laser etching groove I;
(4) junction boxes are arranged on two sides of the component;
wherein, the step (1) specifically comprises:
A. growing a transparent conductive oxide film layer on a glass substrate by an LPCVD (low pressure chemical vapor deposition) method, growing a window layer by a near space sublimation method, growing a cadmium telluride absorption layer by the near space sublimation method, then scribing by laser P1, etching the transparent conductive oxide film layer, the window layer and the cadmium telluride absorption layer by the laser, and then filling a negative photoresist in a scribing groove scribed by P1;
B. after the photoresist process is finished, P2 scribing is carried out, the transparent conductive oxide film layer, the window layer and the cadmium telluride absorption layer are etched through laser, and the P2 scribing specifically comprises the following steps: etching a P2 laser scribed line at a distance of 50-100 mu m from the basic line by taking the scribed line scribed by the P1 as the basic line;
C. after the scribing of P2 is finished, growing a back electrode layer on the light absorption layer by adopting a direct current magnetron sputtering coating film, then scribing P3, and etching the back electrode layer and the light absorption layer by laser to be half of the film thickness, wherein the scribing of P3 specifically comprises the following steps: etching a P3 laser scribed line at a distance of 50-100 mu m from the basic line by taking the scribed line scribed by the P2 as the basic line; in the process of growing the back electrode layer by adopting the direct-current magnetron sputtering coating, a 150mm circular target is adopted, coating is carried out in the mixed atmosphere of argon and nitrogen, the total pressure of the mixed gas is 0.8pa, the flow of the argon is 20sccm, the power is 1000W, the current is 2.2A, and the deposition rate is 1.60 nm/s; the purity of argon is 99.99 percent, and the purity of nitrogen is 99.95 percent;
the score line scored at P1, the score line scored at P2, and the score line scored at P3 are parallel; the laser for P1 scribing adopts the laser with the wavelength of 355nm or 1064nm, the laser for P2 scribing adopts the laser with the wavelength of 532nm, and the laser for P3 scribing adopts the laser with the wavelength of 532 nm.
The performance of the light-transmitting double-sided cadmium telluride power generation glass is detected, and the result is as follows:
in the environment of room temperature (15-25 ℃), a xenon lamp is used for simulating sunlight, and the light intensity is 100mW/cm2Effective illumination area of 2m2Front light entering (near the side I of the solar cell chip), light transmittance of 20%, photoelectric conversion efficiency of 13%, open-circuit voltage of 175V, and short-circuit current density of 19.2mA/cm2The fill factor is 75%.
In the environment of room temperature (15-25 ℃), a xenon lamp is used for simulating sunlight, and the light intensity is 100mW/cm2Effective illumination area of 2m2The back surface enters light (close to the side II of the solar cell chip), the light transmittance is 20%, and the photoelectric conversion efficiency is 13%.
Example 2
This example differs from example 1 only in that: the packaging adhesive film is a POE adhesive film.
Example 3
This example differs from example 1 only in that: the packaging adhesive film is a PVB adhesive film.
The above is only a preferred embodiment of the present invention, and it should be noted that the above preferred embodiment should not be considered as limiting the present invention, and the protection scope of the present invention should be subject to the scope defined by the claims. It will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the spirit and scope of the invention, and these modifications and adaptations should be considered within the scope of the invention.
Claims (10)
1. The light-transmitting double-sided cadmium telluride power generation glass is characterized by sequentially comprising the following components from top to bottom: solar cell chip I, encapsulation glued membrane and solar cell chip II, solar cell chip I and solar cell chip II all include by last under by in proper order: the solar cell chip I also comprises a plurality of parallel laser etching grooves I, and the laser etching grooves I penetrate through the window layer, the cadmium telluride absorption layer and the back electrode layer of the solar cell chip I; the solar cell chip II also comprises a plurality of parallel laser etching grooves II, and the laser etching grooves II penetrate through a window layer, a cadmium telluride absorption layer and a back electrode layer of the solar cell chip II; the laser etching groove II is perpendicular to the laser etching groove I.
2. The assembly of claim 1, wherein the adhesive packaging film is selected from any one of an EVA film, a POE film, and a PVB film.
3. The assembly of claim 1, wherein the transparent conductive film layer has a thickness of 300-400 nm, the window layer has a thickness of 50-120 nm, the cadmium telluride absorber layer has a thickness of 2-4 um, and the back electrode layer has a thickness of 150-250 nm.
4. The assembly of claim 1, wherein the laser etched grooves I and II are linear.
5. A preparation method of light-transmitting double-sided cadmium telluride power generation glass is characterized by comprising the following steps:
(1) sequentially growing a transparent conductive film layer, a window layer, a cadmium telluride absorption layer and a back electrode layer on the surface of the glass substrate layer, and completing series connection by laser scribing to obtain a solar cell unit;
(2) the solar cell unit is subjected to laser etching to form a plurality of laser etching grooves I parallel to the laser scribing lines, and a solar cell chip I is obtained; the solar cell unit is subjected to laser etching to form a plurality of laser etching grooves II perpendicular to the laser scribed lines, and a solar cell chip II is obtained;
(3) and packaging the solar cell chip I and the solar cell chip II by adopting a packaging adhesive film.
6. The preparation method of claim 5, wherein the transparent conductive film layer is grown by LPCVD, the window layer and the cadmium telluride absorption layer are grown by close space sublimation, and the back electrode layer is grown by direct current magnetron sputtering coating.
7. The preparation method according to claim 5, wherein the step (1) specifically comprises:
A. after a transparent conductive oxide film layer, a window layer and a cadmium telluride absorption layer are sequentially grown on a glass substrate, laser P1 scribing is carried out, the transparent conductive oxide film layer, the window layer and the cadmium telluride absorption layer are etched through the laser, and then negative photoresist is filled in a scribing groove scribed by P1;
B. after the photoresist process is finished, P2 scribing is carried out, the transparent conductive oxide film layer, the window layer and the cadmium telluride absorption layer are etched through laser, and the P2 scribing specifically comprises the following steps: etching a P2 laser scribed line at a distance of 50-100 mu m from the basic line by taking the scribed line scribed by the P1 as the basic line;
C. after the P2 scribing is finished, a back electrode layer grows on the light absorption layer, then P3 scribing is carried out, the back electrode layer and half of the film thickness of the light absorption layer are etched through laser, and the P3 scribing specifically comprises the following steps: and etching the P3 laser scribed line at a distance of 50-100 mu m from the basic line by taking the scribed line scribed by the P2 as the basic line to obtain the solar cell unit.
8. The method according to claim 5, wherein the step (2) specifically comprises: the solar cell unit is etched by adopting laser of 532nm to form a plurality of laser etching grooves I parallel to laser lines, and a solar cell chip I is obtained; and the solar cell unit adopts 1064nm laser etching to form a plurality of laser etching grooves II vertical to the laser lines, so as to obtain a solar cell chip II.
9. The method according to claim 5, wherein the step (3) specifically comprises: packaging the solar cell chip I and the solar cell chip II by adopting a packaging adhesive film; the subassembly includes from top to bottom in proper order: the solar cell chip I, the packaging adhesive film and the solar cell chip II; the laser etching groove II is perpendicular to the laser etching groove I.
10. The method of manufacturing according to claim 5, further comprising: and terminal boxes are arranged on two sides of the assembly.
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