CN102479843A - Split type film solar battery composition structure - Google Patents
Split type film solar battery composition structure Download PDFInfo
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- CN102479843A CN102479843A CN201010560111XA CN201010560111A CN102479843A CN 102479843 A CN102479843 A CN 102479843A CN 201010560111X A CN201010560111X A CN 201010560111XA CN 201010560111 A CN201010560111 A CN 201010560111A CN 102479843 A CN102479843 A CN 102479843A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The invention relates to a split type film solar battery composition structure, which at least comprises a plurality of film solar battery units and a back plate protection layer, wherein all film solar battery units are connected and split, the back plate protection layer is formed on the connected and split film solar battery units, each film solar battery unit comprises a transparent base plate, a first conducting layer, a p-i-n semiconductor layer and a second conducting layer, one side of the transparent base plate is a light illumination surface, the first conducting layer is formed on the transparent base plate and is used for making light rays passing the transparent base plate enter the battery units, the p-i-n semiconductor layer is formed above the first conducting layer and is used for generating electron hole pairs after receiving the light irradiation so that light current is provided and the light absorption rate is improved, and the second conducting layer is formed on the p-i-n semiconductor layer and is used for taking out electric energy with the first conducting layer and improving the light and electricity conversion efficiency.
Description
Technical field
The invention relates to a kind of split mounting type thin-film solar cells composition structure, refer to a kind of large-area thin-film solar cells composition structure that has especially.
Background technology
Thin-film solar cells can be made on cheap glass, plastic cement or stainless steel substrate in a large number; To produce large-area solar cell; And its technology more can directly import quite ripe TFT-LCD technology; This is one of its advantage, so industry falls over each other to drop into the research in this field invariably.
Basically, the solar cell technology of the relative other types of thin-film solar cells is comparatively simple, has that cost is low, the mass producible advantage.With regard to the composition of thin-film solar cell substrate; Consult the thin-film solar cells of the existing convention of Fig. 1 and form structure chart; Its basic technology can be through three layers of deposition (deposition), three road laser scribing (scribe) formalities; As described below: at first, earlier with physical gas-phase deposition (PVD) on the glass substrate of subscribing size, plate the layer of transparent conductive film (Transparent Conductive Oxide, TCO); It selects light transmission height and the good material of conductivity, like tin indium oxide (ITO), tin oxide (SnO2) or zinc oxide (ZnO) etc.; Then with its preceding electrode pattern (patterning) of infrared laser line definition; So far be first road deposition and line formality.Second stage is the making of main absorbed layer (Active layer); As the one of which with plasma-assisted chemical vapour deposition (Plasma Enhanced Chemical Vapor Deposition; PECVD) technology grows the hydrogenated amorphous silicon structure (p-a-Si:H/i-a-Si:H/n-a-Si:H) of one deck p-i-n type arrangement on electrode surface, and this main absorbed layer is with the agent structure of p-n semiconductor junction (p-njunction) as light absorption and power conversion.Can carry out the laser scribing step equally after this step, be the main absorbed layer define pattern of producing, so far be second road deposition and line formality.Form the back electrode (backcontact) that aluminium/silver-colored material is the master above that with sputter (sputter) technology more at last, and carry out the 3rd road laser scribing and define its back electrode figure.
Recently will there be the solar photoelectric masterplate of building materials function to import structure trunk, and system element not only can be generated electricity, and also be the part of building shell, and be called building integration kenel sunlight electric system (BIPV) and receive extensive attention.It is the solar photoelectric masterplate (PV module) that exploitation has the building materials function, with the architectural design gimmick solar photoelectric masterplate is imported structure trunk then.Therefore BIPV is a kind of passive type (passive) green building design techniques of reacting the natural conditions and social customs of a place weather; It not only has the economic benefit of generating and energy storage; More can and then substitute existing building materials; Reduce and just process this, and combine design techniques such as sunshade processing, daylighting illumination, to obtain the building energy conservation benefit.Advanced country all has on the development tactics of solar photoelectric and prospective project at present like Japan and Holland and focuses on, so will there be great development potentiality in the field of BIPV.The application of BIPV at present mainly contains the sunshade, building courtyard in building curtain wall or exterior wall, building, parking lot, the tiltedly roofing tile, building roof/soundproof wall etc. of top formula roof building.
With the building glass curtain is example, adopts BIPV to have following advantage: the surface area that, can effectively utilize building.Two, substitute the appearance clad material of building.Three, the building materials that replace roof, metope, window.But four sunshades reduce the building appearance temperature.Five, reduce the monolithic architecture cost.Six, facade is more attractive in appearance etc.For reaching aforementioned purpose, market all exists powerful demand for transparent or opaque large tracts of land BIPV.
Yet as previously mentioned; Existing solar photoelectric masterplate technology adopts plasma-assisted chemical vapour deposition (Plasma Enhanced Chemical Vapor Deposition; PECVD) technology on electrode surface, grow one deck p-i-n type arrangement hydrogenated amorphous silicon structure (p-a-Si:H/i-a-Si:H/n-a-Si:H) as main absorbed layer (Active layer), (standard size is 1.4 * 1.1m to the size-constrained film forming size in the PECVD reaction chamber of masterplate
2), technology is initial must be earlier with the chamber vacuum pumping, and making is used to build the large tracts of land solar photoelectric masterplate of integration like need, for example is of a size of 5 * 5m
2The solar photoelectric masterplate; Need research and development large scale pecvd process equipment; To overcome problems such as main absorbed layer film forming uneven (Uniformity), extracting vacuum are difficult for, cost and price be high very, unfavorable market or other large area film solar modules application markets that makes building integration electro-optical system.
Hereat, be necessary to provide a kind of large tracts of land solar photoelectric masterplate, cheap being applicable to of its cost built applying of integration or other large tracts of land photoelectricity modules.
Summary of the invention
The object of the present invention is to provide a kind of thin-film solar cells to form structure; Utilize several thin-film solar cells unit amalgamations to become a large-area thin-film solar cells, and above the thin-film solar cells unit of several amalgamations, form a large tracts of land backboard protective layer.The convention film solar battery structure from bottom to top comprises: substrate, first conductive layer, P-I-N layer, second conductive layer and backboard protective layer; The present invention forms several thin-film solar cells unit earlier; Under its structure and on comprise: substrate, first conductive layer, P-I-N layer, second conductive layer interconnect amalgamation with several unit again.A bonding large tracts of land backboard protective layer on the thin-film solar cells unit of amalgamation; Use and utilize original undersized pecvd process to produce large-area thin-film solar cells; Reduce producing the area battery cost effectively, to be applied to the utilization that building or agricultural greenhouse etc. can improve energy regeneration and reclaim circulation.
Another purpose of the present invention is by selecting several transparent or opaque small size thin-film solar cells unit of amalgamation, forming transparent or opaque large tracts of land split mounting type thin-film solar cells masterplate.It is by: above the main absorbed layer of p-i-n layer of each small size thin-film solar cells unit, form transparency conducting layer, it can be transparency conductive electrode or single transition metal of thin layer or aluminium one of them.
The present invention's another purpose again is by on large tracts of land split mounting type thin-film solar cells module, combining transparent large tracts of land tempering glass, solving large tracts of land tempering glass and be difficult for being cut into undersized problem.
To achieve these goals; A kind of split mounting type thin-film solar cells according to the present invention proposes is formed structure, comprises at least: several thin-film solar cells unit are the amalgamation that links to each other between each unit; And a backboard protective layer, it is formed on this thin-film solar cells unit of the amalgamation that links to each other.Wherein aforementioned each thin-film solar cells unit comprises: a transparency carrier, the one side of this transparency carrier are the irradiation faces; One first conductive layer, it is to be formed on this transparency carrier, with getting into battery unit inside so that pass through the light of transparency carrier; One p-i-n semiconductor layer, it is to be formed at this first conductive layer top, in order to after receiving rayed, to produce electron hole pair (or be called electronics electricity hole to), photoelectric current to be provided and to increase absorptivity; And one second conductive layer, it is formed on this p-i-n semiconductor layer, in order to take out electric energy and the efficient that promotes opto-electronic conversion with aforementioned first conductive layer.
The present invention also can adopt following technical measures further to realize.
Aforesaid split mounting type thin-film solar cells is formed structure, and wherein said first conductive layer is a transparency conductive electrode, and second conductive layer is transparency conductive electrode or single transition metal or aluminium one of them.
Aforesaid split mounting type thin-film solar cells is formed structure, and the material of wherein said transparent back panel is a tempered glass.
Aforesaid split mounting type thin-film solar cells is formed structure, and the material of wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
Aforesaid split mounting type thin-film solar cells is formed structure, and wherein said transition metal is silver or nickel, and wherein the thickness of silver is between 3nm～25nm.
Aforesaid split mounting type thin-film solar cells is formed structure, and wherein said first conductive layer and second conductive layer are zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO).
The present invention compared with prior art has tangible advantage and beneficial effect.By technique scheme, split mounting type thin-film solar cells of the present invention is formed structure, has advantage at least:
One, split mounting type thin-film solar cells of the present invention is formed structure, reduces producing the area battery cost effectively, to be applied to the utilization that building or agricultural greenhouse etc. can improve energy regeneration and reclaim circulation.
Two, split mounting type thin-film solar cells of the present invention is formed structure, can form large-area structure.
Three, split mounting type thin-film solar cells of the present invention is formed structure, on large tracts of land split mounting type thin-film solar cells module, combines transparent large tracts of land tempering glass, solves large tracts of land tempering glass and is difficult for being cut into undersized problem.
Description of drawings
Fig. 1 is that existing known thin-film solar cells is formed structure chart.
Fig. 2 is that the split mounting type thin-film solar cells of the present invention's one specific embodiment is formed structure chart.
Fig. 3 is the split mounting type thin-film solar cells top view of the present invention's one specific embodiment.
Fig. 4 is the split mounting type thin-film solar cells top view of the present invention's one specific embodiment
Fig. 5 is the three-dimensional view of the thin-film solar cells of the present invention's one specific embodiment.
Fig. 6 is that the split mounting type thin-film solar cells of another specific embodiment of the present invention is formed structure chart.
100,200,300,600: split mounting type thin-film solar cells unit
101,201,301,601: transparency carrier
102,202,302: the first conductive layers
103,203,303,602:p-i-n semiconductor layer
104,204,304,603: the second conductive layers
400: the backboard protective layer
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment, the split mounting type thin-film solar cells that proposes according to the present invention is formed its embodiment of structure, step, structure, characteristic and effect thereof specify.
Seeing also Fig. 2, is that the split mounting type thin-film solar cells of first embodiment of the invention is formed structure.Split mounting type thin-film solar cells of the present invention is formed structure; At least comprise: several have the thin-film solar cells unit 100,200,300 of same composition structure; It between each unit the amalgamation that links to each other; And a backboard protective layer 400, it is formed on the thin-film solar cells unit 100,200,300 of the amalgamation that links to each other.It should be noted that split mounting type thin-film solar cells unit 100,200,300 is merely routine formula property explanation, optionally can increase or reduce the thin-film solar cells element number of continuous amalgamation.Each unit comprises: a transparency carrier 101,201,301, and the one side of this substrate is the irradiation face; One first conductive layer 102,202,302; It is to be formed at this transparency carrier 101,201,301 tops; With so that inject the p-i-n semiconductor layer of inside battery, and take out electric energy and the efficient that promotes opto-electronic conversion through the light of transparency carrier 101,201,301.One p-i-n semiconductor layer 103,203,303 is with producing electron hole pair so that pass through transparency carrier, photoelectric current to be provided and to increase absorptivity; And one second conductive layer 104,204,304, it is to be formed at p-i-n semiconductor layer 103,203,303 tops, in order to take out electric energy and the efficient that promotes opto-electronic conversion.The present invention further forms a large tracts of land backboard protective layer above second conductive layer 104,204,304; Formed split mounting type thin-film solar cells is formed structure, and (for example 1.4 * 1.1m2) have than large tracts of land, for example 5 * 5m compared to existing convention small size thin-film solar cells
2, its below view is please with reference to Fig. 2, and it shows a plurality of thin-film solar cells unit and interconnects and become a large area film solar battery cell; With reference to Fig. 3, it shows the top view of the thin-film solar cells of the present invention's one specific embodiment, in addition with reference to Fig. 5, shows the three-dimensional view that it shows the thin-film solar cells of the present invention's one specific embodiment.
The method that above second conductive layer 104,204,304, forms a large tracts of land backboard protective layer is to apply one deck solar cell packaging EVA film at second conductive layer 104,204,304 earlier, on the PVB glue-line, covers one deck large tracts of land backboard protective layer again.Use the bonding large tracts of land backboard of EVA glue-line protective layer to be with the advantage of a plurality of thin film solars of the amalgamation that links to each other; The EVA film is a kind of sticking film of thermosetting that is the basis with EVA (abbreviation of Ethylene ethene, Vinyl vinyl, Acetate acetate), is used to be placed in the middle of the doubling glass, before heating, is vaporific; There is the lines of relief on the two sides; After heating, become fully transparent and very strong adhesion strength is arranged, very strong stability is also arranged under harsh condition.
In another specific embodiment of the present invention; Backboard protective layer of the present invention can be taked with the bonding large tracts of land tempering glass (Tempered Glass) of EVA glue-line as the backboard protective layer; Can be used as the glass curtain of building; Reach energy-conservation effect, and, should belong to ideal because the EVA glue-line has excellent soundproof effect with the bonding glass of PVB for high-frequency sound wave compared to tradition.In addition; Because of the bonding large tracts of land tempering glass of EVA film can be resisted high temperature, moisture, ultraviolet ray or the like, and can use out of doors for a long time, also can be used as the roof Material of agricultural greenhouse; Its light transmission is highly suitable for greenhouse or organic agriculture cultivation, and has power benefit.
In the another specific embodiment of the present invention, have the height light transmission features for making thin-film solar cells of the present invention, aforementioned second conductive layer can be transparency conductive electrode.Transparency conductive electrode mainly can be divided into two kinds, and a kind of is metallic film, another kind be transparent conductive oxide (Transparentconductiveoxide, TCO).
With TCO; At present embodiment; This first transparent conductive oxide can be zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron transparent conductive oxides such as (ZnO); Exceed much because zinc oxide exciton bind energy (60meV) is at room temperature compared with the exciton bind energy (GaN 25meV) of gallium nitride, and bigger exciton bind energy being represented the luminous efficiency of Geng Gao, is the fine material Tu of photoelectric cell active layers therefore.Above-mentioned transparent conductive oxide has lower resistivity, in order to do making the penetrance that increases light.
With metallic film, can be single transition metal or aluminium one of them, this transition metal for example is silver or nickel or the like; With silver is example; The thickness of silver is between 3nm～25nm, and the characteristic of silver has good light transmittance and because of silver-colored tool reduces the characteristic of resistance value, therefore has favorable conductive character at visible-range; Preferably, the thickness of silver is between 3nm～5nm, 10nm～15nm and 20nm～25nm.Because of the very thin thickness of silver, the integral thickness of thin-film solar cells is reduced in addition.Replace the nesa coating that has convention now by translucent conductive metal layer, increase photosphere and penetration length effectively, and increase reflective character, to increase whole conversion efficiency.
In the present embodiment, the material of this transparency carrier can use general glass, quartz, perspex, sapphire substrate or transparent flexual material or the like.
When the irradiation face of this transparency carrier 101,201,301 receives solar light irradiation, then light makes solar light irradiation connect on the face in pn by penetrating this transparency carrier 101,201,301 and the first transparent conductive layer 102,202,302 enters to this p-i-n semiconductor layer 103,203,303; In order to do making partly electronics because of having enough energy, leave atom and become free electron, lose the atom thereby the generation hole of electronics; And see through the p N-type semiconductor N and the n N-type semiconductor N attracts hole and electronics respectively; Separate positive electricity and negative electricity, connect the face two ends thereby produce potential difference, connect a circuit (figure does not show) by first conductive layer 102,202,302 and second conductive layer 104,204,304 again at pn; Make electronics be able to through; And combine once more with the hole that connects the face other end at pn, just produce electric current, take out electric energy by this first conductive layer 102,202,302 and second conductive layer 104,204,304 again; To convert available power to; And for example be silver or nickel etc. because of second conductive layer 104,204,304 of the present invention can be transition metal, it has good electrical conductivity, and for making at visible-range good light transmittance is arranged; The thickness of the present invention's first conductive layer 102,202,302 and second conductive layer 104,204,304 is moderate, causes conductance to descend to avoid producing discontinuous island film.
Seeing also Fig. 6, is the composition structure chart of the split mounting type thin-film solar cells unit 600 of another embodiment of the present invention, comprises at least: a transparency carrier 601, the one side of this transparency carrier 601 are irradiation faces; One p-i-n semiconductor layer 602 is the tops that are formed at this this transparency carrier 601, in order to produce electron hole pair, electric current to be provided and to increase absorptivity; And several second conductive layers 603, be the top that is formed at p-i-n semiconductor layer 602, in order to take out electric energy and the efficient that promotes opto-electronic conversion.
The present invention further forms a large tracts of land backboard protective layer above second conductive layer 104,204,304; Formed split mounting type thin-film solar cells is formed structure, and (for example 1.4 * 1.1m2) have than large tracts of land, for example 5 * 5m compared to existing convention small size thin-film solar cells
2, its below view is please with reference to Fig. 2, and it shows a plurality of thin-film solar cells unit and interconnects and become a large area film solar battery cell; The top view is please with reference to Fig. 3, and it is shown as a large-area thin-film solar cells.
Though the present invention discloses as above with preferred embodiment, so be not the scope of implementing in order to qualification the present invention, the simple equivalent of doing according to claims of the present invention and description changes and modification, still belongs to the scope of technical scheme of the present invention.
Claims (10)
1. a split mounting type thin-film solar cells is formed structure, it is characterized in that comprising at least:
Several thin-film solar cells unit are the amalgamation that links to each other between each unit; And
One backboard, its area form on these thin-film solar cells unit of the amalgamation that links to each other greater than the area of aforementioned each thin-film solar cells unit;
Wherein aforementioned each thin-film solar cells unit comprises:
One transparency carrier, the one side of this transparency carrier are the irradiation faces;
One first conductive layer, it is transparency conductive electrode and is formed on this transparency carrier, with getting into battery unit inside so that pass through the light of transparency carrier;
One p-i-n semiconductor layer, it is to be formed at this first conductive layer top, in order to after receiving rayed, to produce electron hole pair, photoelectric current to be provided and to increase absorptivity; And
One second conductive layer, it is formed on this p-i-n semiconductor layer, in order to take out electric energy and the efficient that promotes opto-electronic conversion with aforementioned first conductive layer.
2. split mounting type thin-film solar cells as claimed in claim 1 is formed structure, it is characterized in that wherein said second conductive layer is one of them of transparency conductive electrode or single transition metal or aluminium.
3. split mounting type thin-film solar cells as claimed in claim 1 is formed structure, and the material that it is characterized in that wherein said backboard is a tempered glass.
4. split mounting type thin-film solar cells as claimed in claim 2 is formed structure, and the material that it is characterized in that wherein said backboard is a tempered glass.
5. split mounting type thin-film solar cells as claimed in claim 1 is formed structure, and the material that it is characterized in that wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
6. split mounting type thin-film solar cells as claimed in claim 2 is formed structure, and the material that it is characterized in that wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
7. split mounting type thin-film solar cells as claimed in claim 2 is formed structure, it is characterized in that wherein said transition metal is silver or nickel.
8. split mounting type thin-film solar cells as claimed in claim 7 is formed structure, and the thickness that it is characterized in that wherein said silver is between 3nm～25nm.
9. split mounting type thin-film solar cells as claimed in claim 1 is formed structure, it is characterized in that wherein said first conductive layer is zinc oxide aluminum, zinc-gallium oxide or zinc oxide boron.
10. split mounting type thin-film solar cells as claimed in claim 2 is formed structure, it is characterized in that wherein said first conductive layer and second conductive layer are zinc oxide aluminum, zinc-gallium oxide or zinc oxide boron.
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| CN201010560111XA CN102479843A (en) | 2010-11-24 | 2010-11-24 | Split type film solar battery composition structure |
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| CN201010560111XA CN102479843A (en) | 2010-11-24 | 2010-11-24 | Split type film solar battery composition structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109192393A (en) * | 2018-09-06 | 2019-01-11 | 江苏天贯碳纳米材料有限公司 | A kind of preparation method and its product of spliced transparent conductive film electrode |
| CN113193064A (en) * | 2021-03-16 | 2021-07-30 | 成都中建材光电材料有限公司 | Thin-film solar cell module and preparation method thereof |
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| US20040118446A1 (en) * | 2002-12-13 | 2004-06-24 | Canon Kabushiki Kaisha | Solar cell module |
| CN101707909A (en) * | 2007-04-20 | 2010-05-12 | 三洋电机株式会社 | Solar cell module |
| US20090014058A1 (en) * | 2007-07-13 | 2009-01-15 | Miasole | Rooftop photovoltaic systems |
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| CN109192393A (en) * | 2018-09-06 | 2019-01-11 | 江苏天贯碳纳米材料有限公司 | A kind of preparation method and its product of spliced transparent conductive film electrode |
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Application publication date: 20120530 |