CN207282509U - The crystalline silicon of double-side photic/film silicon heterojunction solar battery - Google Patents
The crystalline silicon of double-side photic/film silicon heterojunction solar battery Download PDFInfo
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- CN207282509U CN207282509U CN201720645616.3U CN201720645616U CN207282509U CN 207282509 U CN207282509 U CN 207282509U CN 201720645616 U CN201720645616 U CN 201720645616U CN 207282509 U CN207282509 U CN 207282509U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 176
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 173
- 239000010703 silicon Substances 0.000 title claims abstract description 172
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 141
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 113
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The utility model provides a kind of crystalline silicon of double-side photic/film silicon heterojunction solar battery, including：N-type silicon substrate；Window layer, including the intrinsic amorphous silicon with wide optical band gap non-crystalline silicon or microcrystal silicon that either microcrystal silicon and N-shaped adulterate；Back surface field layer, including intrinsic amorphous silicon non-crystalline silicon or microcrystal silicon that either microcrystal silicon and p-type are adulterated；First transparent conductive film；Second transparent conductive film；First electrode；And second electrode.The double-side photic solar cell of the utility model use with wide optical band gap, low-defect-density intrinsic amorphous silicon either microcrystal silicon and N-shaped non-crystalline silicon or microcrystalline silicon film lamination as Window layer, effective the defects of reducing Window layer density, the absorption loss water to sunlight is reduced, improves photoelectric conversion efficiency and the generated output output of solar cell and photovoltaic module.Compared with existing HIT batteries, the utility model has broader process window, is conducive to technology controlling and process and the management produced in enormous quantities.
Description
Technical field
The utility model belongs to the photovoltaic art of opto-electronic conversion, more particularly to a kind of crystalline silicon/film of double-side photic
Silicon heterojunction solar battery and production method.
Background technology
Solar cell is a kind of electrooptical device, its fundamental characteristics is to receive sunlight to be converted into electric energy.The sun
The large area p-n junction that the basic structure of battery is made of the semi-conducting material of two kinds of different conduction-types, semi-conducting material pair
Sunlight has very high absorbability, and photo-generated carrier caused by the internal electric field separating semiconductor material of p-n junction is that is, electric
Son-hole pair, forms potential barrier, is collected by metal electrode and export carrier, forms electric power.In order to improve solar cell to light
Absorbability, the surface of usual semi-conducting material is fabricated to concaveconvex structure, passes through to the multiple refraction of sunlight and multiple suction
Receive, reduce sunlight and reflected on surface, meanwhile, the dielectric or other optical thin films with antireflective are made on surface
Material, i.e. surface antireflection film, further reduces the caused optical loss of surface reflection, improve the absorption to sunlight
Ability.
Solar cell is processed making based on crystalline silicon, using the technology of semiconductor.Tried first with chemistry
Either physical method corrodes surface of crystalline silicon or is etched the pyramid structure for making and having systematicness for agent, utilizes gaseous state
Or solid-state diffusion makes p-n junction on surface, the reflection loss of sunlight is reduced in front surface deposit optical film, is finally made
Metal electrode completes the processing and fabricating of solar cell basic system.
In order to obtain electric power output, effectively protect solar cell, adaptation is installed and used on a large scale, usually utilize metal wire or
Person's metal tape is in series or in parallel the progress of multiple solar cells, then, high transparency is utilized in the front surface for receiving sunlight
Glass, the back side utilize with preferable leakproofness macromolecule resin material, between glass, battery, backboard add have compared with
The encapsulating material of strong bonding and sealing performance is combined together glass, battery and backboard, is fabricated with multiple battery compositions
Generator unit, i.e. photovoltaic module.For the ease of carrying and installing, while there is certain carrying and wind loading rating, usually in group
The edge installation metal edge frame of part.
Also there occurs very big change for development and large-scale application with solar cell technology, solar cell material and structure
Change, in addition to crystal-silicon solar cell, the solar cell of multiple compounds material occur, for example, GaAs (GaAs), copper and indium
Gallium selenium (CIGS), cadmium telluride (CdTe) etc..These solar cells largely do not form p-n junction by same material, i.e., same
Matter knot (homojunction) solar cell, but hetero-junctions is formed by these light absorbing materials and other materials
(Heterojunction) structure of p-n junction.In silicon materials series, in addition to initial single crystal silicon solar cell, also occur
Polysilicon and film silicon solar cell.Polycrystalline silicon solar cell, which removes, is making method and monocrystalline used in surface relief structure
Beyond silicon difference, other technologies are essentially identical.There are non-crystalline silicon, even microcrystal silicon, nano-silicon again in film silicon solar cell
Thin film solar cell.Since the structure of these films is imperfect, there are substantial amounts of fault of construction, and most representational is no shape
Into the dangling bonds (Dangling-bond) of the silicon atom of engagement keys, solar cell is formed in p-n junction by p-type and n-type thin film merely
The recombination rate of depleted region is very high, and the transfer efficiency of battery is very low.And the utility model sun of p-i-n structure therefore,
Battery, i.e. undoped intrinsic (Intrinsic) amorphous silicon membrane is added between p and n-type thin film material as light absorbs
Layer, makes carrier be greatly lowered in the compound of p-n junction region, the transfer efficiency of solar cell is effectively improved.However, by
Change in non-crystalline silicon and microcrystalline silicon film under illumination condition, the knot of silicon and hydrogen especially after the ultraviolet light of high-energy is absorbed
Cracking can be produced by closing key, increased the fault of construction inside film, caused the decrease in efficiency of solar cell, i.e., photic to decline
Subtract.
In order to solve the basic technique problems of film silicon solar cell, the transfer efficiency of crystal-silicon solar cell, day are improved
This Sanyo Electric Co., Ltd is combined the characteristic of amorphous silicon membrane with the process for treating surface of crystalline silicon, has researched and developed band
There is the crystal silicon heterojunction solar battery of intrinsic amorphous silicon film layer, its English is expressed as Heterojunction with an
Intrinsic Thin-layer, abbreviation HIT solar cells, SHJ solar cells, corresponding Silicon are known as the China more
Heterojunction.HIT batteries are a kind of high crystal-silicon solar cells of transfer efficiency, and laboratory highest transfer efficiency reaches
To 25.1%, reach more than 22% in the mass production of the Japan transfer efficiency that is averaged.HIT structures are as shown in Figure 1, it is tied substantially
Structure is for substrate with N-shaped monocrystalline silicon piece 30, carries out chemical cleaning and surface wool manufacturing to it first, forms surface and improves light absorbs
Concaveconvex structure, that is, usually said surface falls into light pyramid structure, and clean table is formed after again passing by chemical cleaning
Face, using the methods of plasma activated chemical vapour deposition (PECVD) in silicon chip front surface deposition intrinsic amorphous silicon membrane 321 and p
Type adulterates 322 lamination of silica-base film, overleaf 312 lamination of deposition intrinsic amorphous silicon membrane 311 and N-shaped doped amorphous silicon film,
Then two sides deposit transparent conductive oxide (TCO) film 33,34, then by screen printing technique make metal electrode 35,
36 form the solar cell 3 with symmetrical structure.In use, using metal edge frame 106, upper strata glued membrane 102, tempered glass 103,
Lower floor's glued membrane 104 and backboard 105 are packaged the solar cell 3, as shown in Figure 2.It is intrinsic non-in HIT solar cells
Crystal silicon and doped amorphous silicon film lamination form surface of crystalline silicon good passivation, separate and collect photo-generated carrier, because
This, amorphous silicon membrane is the important component of HIT batteries, its structure and characteristic transfer efficiency and stability to solar cell
It is most important.But due to the structural uncertainty of amorphous silicon membrane, the transitional region from amorphous to crystallite is very big, obtains
Structure factor, the constant interval of optical band gap and electric conductivity it is also very big, make making intrinsic amorphous silicon and doped amorphous silicon
The process window of layer is difficult to determine.Especially boron doped p-type non-crystalline silicon, since boron atom adulterates most common raw gas
(B2H6) decomposable process in chemical vapor deposition is complicated, the intermediate (Precusor) of decomposition reaction is unmanageable, boron atom
Lattice defect is more readily formed in p-type amorphous silicon membrane with the intermediate without decomposing completely, therefore, one in p-type non-crystalline silicon
As include the fault of construction and dangling bonds density of higher, the optical absorption and Carrier recombination speed for making p-type amorphous silicon layer increase
Add, cause the manufacture craft of HIT batteries to control difficulty, be difficult to find that in actual production process and realize efficient process window,
The distributed area of battery efficiency is wider, have impact on the mass production and industrialization promotion of HIT batteries.
In order to solve amorphous silicon membrane in HIT batteries, especially the process window of p-type doped amorphous silicon film deposition and
The technical barrier of technology controlling and process, reduces absorption of the Window layer to sunlight and to the compound of carrier, many enterprises and scientific research
Mechanism has carried out substantial amounts of research, is concentrated mainly on using different amorphous silicon membrane deposition techniques, for example, plasma enhancing
Chemical vapor deposition (PE-CVD) technology, metal fever catalytic chemical gaseous phase deposition (Cat-CVD) technology, hot-wire chemical gas-phase deposition
(Hot-wire CVD) technology etc., changes the sedimentary condition of amorphous silicon membrane, including selection process gas, the power of plasma
Density, pressure, temperature etc., carry out the processing after thin film deposition, including corona treatment, heat treatment etc., still, these all do not have
There is the effect obtained, the mass production of HIT batteries still suffers from very big difficulty, expands production on a large scale in solar cell industry
Background under, HIT batteries is not promoted.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of crystal of double-side photic
Silicon/film silicon heterojunction solar battery and production method, work is made for solving p-type non-crystalline silicon window layer film in HIT batteries
Skill is difficult to control, and optical absorption and the high technical barrier of Carrier recombination speed, widen the process window of amorphous silicon membrane, improve
The transfer efficiency of solar cell.
In order to achieve the above objects and other related objects, the utility model provides a kind of crystalline silicon/film of double-side photic
Silicon heterojunction solar battery, the solar cell include：N-type silicon substrate, it is with opposite first surface and second surface；Window
Mouth layer, is formed at the first surface of the n-type silicon substrate, it includes intrinsic amorphous silicon or microcrystal silicon with wide optical band gap
And the non-crystalline silicon or microcrystal silicon of N-shaped doping；Back surface field layer, is formed at the second surface of the n-type silicon substrate, it includes intrinsic
Non-crystalline silicon non-crystalline silicon or microcrystal silicon that either microcrystal silicon and p-type are adulterated；First transparent conductive film, is formed at the window
Layer surface；Second transparent conductive film, is formed at the back surface field layer surface；First electrode, is made in first electrically conducting transparent
On film；And second electrode, it is made on second transparent conductive film.
Preferably, the silicon substrate is N-shaped crystalline silicon.
Preferably, deposition intrinsic non-crystalline silicon or crystallite are distinguished on first and second surface of the N-shaped crystalline silicon substrate
Silicon thin film, is formed crystalline silicon/thin film silicon heterojunction boundary, the N-shaped crystalline silicon is served as a contrast using intrinsic amorphous silicon or microcrystal silicon
The dangling bonds of basal surface form good passivation so that the recombination-rate surface of the n-type silicon substrate in below 10cm/s, its
In, the thickness range of intrinsic amorphous silicon or microcrystal silicon is 3~20nm.
Preferably, oxygen atom is mixed in the intrinsic amorphous silicon or microcrystalline silicon film deposition, forms silicon oxide thin film, suppression
Non-crystalline silicon or microcrystalline silicon film processed n-type silicon substrate surface crystal epitaxy, while obtain high optical transmittance and
The intrinsic layer of low defect, wherein, the incorporation of oxygen atom is 5 × 1019~5 × 1020cm-3。
Preferably, in the intrinsic amorphous silicon of the N-shaped crystalline silicon substrate first surface or microcrystalline silicon film surface deposition n
Built in field is formed between type doped amorphous silicon or microcrystalline silicon film, with the n-type substrate, is received by the effect of built in field
Collect the photo-generated carrier near N-shaped crystalline silicon substrate first surface, wherein, the thickness range of Window layer is 4~10nm.
Preferably, carbon atom is mixed into the n-type window layer, amorphous or crystallite silicon carbon film are formed, to reduce N-shaped
The defects of Window layer density, expansion optical band gap width, wherein, the incorporation of carbon is 7 × 1019~2 × 1020cm-3。
Preferably, in the intrinsic amorphous silicon of the N-shaped crystalline silicon substrate second surface or microcrystalline silicon film surface deposition p
Built in field is formed between type doped amorphous silicon or microcrystalline silicon film, with the n-type substrate, is received by the effect of built in field
Collect the photo-generated carrier near N-shaped crystalline silicon substrate second surface, wherein, the thickness range of back surface field layer is 4~20nm.
Preferably, the first transparent conductive film is deposited in window layer surface, which has good optics
The transparent conductive film or thin laminar material of transmitance, high electric conductivity and appropriate refractive index, for collecting first
The carrier on surface, while reflection loss of the sunlight in window layer surface is reduced, first transparent conductive film includes mixing
Tin indium oxide, mix aluminium indium oxide, tungsten-doped indium oxide, mix titanium indium oxide, mix caesium indium oxide, Al-Doped ZnO, gallium-doped zinc oxide, mix
The stack combinations of one or more thin-film materials in gallium aluminium zinc oxide, graphene.
Preferably, the second transparent conductive film is deposited in back surface field layer surface, which has satisfactory electrical conductivity
Can and high work function transparent conductive film or thin laminar material, collect the carrier of second surface for providing, described the
Two transparent conductive films include tin-doped indium oxide, mix aluminium indium oxide, tungsten-doped indium oxide, mix titanium indium oxide, mix caesium indium oxide, mix aluminium
Zinc oxide, gallium-doped zinc oxide, the stack combinations for mixing one or more thin-film materials in gallium aluminium zinc oxide, graphene.
The utility model also provides a kind of photovoltaic module, and the photovoltaic module utilizes metal interconnection wire or metal interconnection bar
The crystalline silicon of multiple double-side photics/film silicon heterojunction solar battery is in series or in parallel is formed, the sun electricity
The Window layer in pond is arranged towards the smooth surface direction of photovoltaic module, the back side direction of back surface field layer towards photovoltaic module, makes institute
Stating the Window layer of solar cell becomes main smooth surface.
Preferably, the photovoltaic module front surface encapsulation material selection be with high optical transmittance, low optical reflectivity,
The tempering blank glass or transparent resin material of high loadability, to ensure to provide too to the solar cell for being encapsulated in inside
Sunlight irradiates, and provides carrying photovoltaic module transport, installation, wind pressure, load caused by accumulated snow.
Preferably, it is the material with high optical reflectivity that the back side encapsulating material of the photovoltaic module, which is selected, so that envelope
Receive the reflected light of back side encapsulating material mounted in crystalline silicon/film silicon heterojunction solar battery of internal double-side photic and obtain
Photoelectric conversion efficiency and the gain with generated output.
Preferably, it is the material with high optical transmittance that the back side encapsulating material of the photovoltaic module, which is selected, so that envelope
Receive the reflected light and scattering light of back side environment mounted in crystalline silicon/film silicon heterojunction solar battery of internal double-side photic
Obtain the gain of photoelectric conversion efficiency and generated output.
Preferably, metal edge frame is installed in photovoltaic module edge, coating high strength sealing material, further improves photovoltaic group
The leakproofness and load-carrying ability of part.
The production method that the utility model also provides a kind of crystalline silicon/film silicon heterojunction solar battery of double-side photic,
Including step：A N-shaped crystalline silicon substrate is provided, it is with opposite first surface and second surface；Served as a contrast in the N-shaped crystalline silicon
The first surface at bottom deposits the first intrinsic amorphous silicon or microcrystalline silicon film；In the first intrinsic amorphous silicon positioned at the first surface
Or microcrystalline silicon film surface depositing n-type doped amorphous silicon or microcrystalline silicon film；In the second surface of the N-shaped crystalline silicon substrate
Deposit the second intrinsic amorphous silicon or microcrystalline silicon film；In the second intrinsic amorphous silicon or microcrystalline silicon film positioned at the second surface
The non-crystalline silicon or microcrystalline silicon film of surface depositing p-type doping；Formed in the non-crystalline silicon or crystallite silicon face of N-shaped doping
First transparent conductive film；The second transparent conductive film is formed in the non-crystalline silicon or crystallite silicon face of p-type doping；In institute
State and make first electrode on the first transparent conductive film；In making second electrode on second transparent conductive film.
Preferably, there is provided a n-type silicon substrate is further included in the first surface and second surface system of the n-type silicon substrate
Suede and the step of cleaned.
Preferably, the first non-crystalline silicon or microcrystalline silicon film, the second non-crystalline silicon or microcrystalline silicon film, N-shaped doping are made
Non-crystalline silicon either microcrystal silicon, the non-crystalline silicon of p-type doping or the method for microcrystal silicon include plasma enhanced vapor deposition method
In PE-CVD, metal fever catalytic chemical vapor deposition technique Cat-CVD and hot filament CVD Hot-wire CVD
It is a kind of.
Preferably, in the first surface and second surface deposition intrinsic non-crystalline silicon or microcrystal silicon of the N-shaped crystalline silicon substrate
While film, mix oxygen atom, with first and second described intrinsic amorphous silicon or microcrystalline silicon film formed amorphous or
Crystallite silica or silicon carbon film.
Preferably, adulterated in the intrinsic amorphous silicon positioned at the first surface or microcrystalline silicon film surface depositing n-type non-
Crystal silicon or microcrystalline silicon film, while carbon atom is mixed, it is non-to be formed in the non-crystalline silicon or microcrystalline silicon film that the N-shaped adulterates
Brilliant or crystallite silicon carbon film.
Preferably, adulterated in the second non-crystalline silicon positioned at the second surface or microcrystalline silicon film surface depositing p-type non-
Crystal silicon or microcrystalline silicon film.
As described above, the crystalline silicon of the double-side photic of the utility model/film silicon heterojunction solar battery and production method,
Have the advantages that：
The utility model forms surface of crystalline silicon effective passivation effect using intrinsic amorphous silicon or microcrystalline silicon film,
The recombination rate of surface of crystalline silicon is reduced, it is non-using doped p type by the use of adulterating N-shaped non-crystalline silicon or microcrystal silicon as Window layer
Crystal silicon or microcrystal silicon further improve the surface passivation effect of crystalline silicon, while collect crystalline silicon generation as back surface field layer
Photo-generated carrier.Especially with wide optical band gap, the N-shaped non-crystalline silicon of low-defect-density or microcrystal silicon as surface window
Layer, can effectively reduce the Carrier recombination in Window layer, while be conducive to first surface transparent conductive oxide (TCO) film
Or the optimization of pellicular cascade reduces the absorption loss water to sunlight and is particularly to obtain the excellent deflection surfaces of photoelectric properties
Improve short wave response；By the use of doped p type non-crystalline silicon or microcrystal silicon as back surface field layer, Effective Regulation p-type non-crystalline silicon can be passed through
Either the electric conductivity of microcrystalline silicon film and work function while be conducive to second surface TCO thin film or the work function of pellicular cascade
Optimization is finally reached and carries to form Schottky barrier when reducing or even eliminate p-type non-crystalline silicon or the contact of microcrystal silicon TCO thin film
The fill factor, curve factor of high solar cell, reduce encapsulation loss and Module Dissipation of the battery to component, improves the photoelectricity of photovoltaic module
Transfer efficiency and generated output output.Since the production method and process window of N-shaped doped amorphous silicon or microcrystalline silicon film are excellent
In doped p type non-crystalline silicon or microcrystalline silicon film, the technology of the utility model has broader process window, is conducive to high-volume
The technology controlling and process of production and management, are conducive to promote the extensive industrialization of high efficiency crystal silicon thin film silicon heterojunction solar battery
And application, to promoting the industrialization of high efficiency crystal silicon thin film silicon heterojunction solar battery and the industrial upgrading of photovoltaic to have
Facilitation.
Brief description of the drawings
Fig. 1 is shown as the basic structure signal of double-side photic crystalline silicon/film silicon heterojunction solar battery of the prior art
Figure.
Fig. 2 is shown as making photovoltaic group using double-side photic crystalline silicon/film silicon heterojunction solar battery in the prior art
The basic structure schematic diagram of part.
Fig. 3 is shown as the basic knot of double-side photic crystalline silicon/film silicon heterojunction solar battery of the utility model technology
Structure schematic diagram.
Fig. 4 be shown as the utility model technology and the prior art double-side photic crystalline silicon/film it is silicon heterogenous
AM1.5,100mW/cm2Current -voltage curve under standard illumination condition compares.
Fig. 5 is shown as the silicon heterogenous interior quantum of double-side photic crystalline silicon/film of the utility model technology and the prior art
Efficiency (Internal Quantum Efficiency:IQE) curve compares.
Fig. 6 is shown as in the utility model technology making using double-side photic crystalline silicon/film silicon heterojunction solar battery
The basic structure schematic diagram of photovoltaic module.
Under the conditions of Fig. 7 is shown as double-side photic photovoltaic module outdoors, the back side is blocked using black barrier material, front
Block and without current-voltage characteristic curve measured under obstruction conditions.
Fig. 8 is shown as double-side photic crystalline silicon/thin film silicon heterojunction photovoltaic group of the utility model technology and the prior art
Actual power generation of the part in some day compares.
Fig. 9 is shown as making the basic structure schematic diagram of photovoltaic module using high optical reflectivity back board packaging material.
Component label instructions
2 solar cells
21 Window layers
211 intrinsic amorphous silicons or microcrystal silicon
The non-crystalline silicon or microcrystal silicon of 212 N-shapeds doping
22 back surface field layers
221 intrinsic amorphous silicons or microcrystal silicon
The non-crystalline silicon or microcrystal silicon of 222 p-types doping
23 first transparent conductive films
24 second transparent conductive films
25 first electrodes
26 second electrodes
3 sealing materials
4 surface encapsulation glass
5 sealing materials
6 back side encapsulating materials
7 metal edge frames
8 back side encapsulating materials
Embodiment
Illustrate the embodiment of the utility model below by way of specific instantiation, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints with answering
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Refer to Fig. 2~Fig. 9.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, when only display is with related component in the utility model rather than according to actual implementation in illustrating then
Shape and size are drawn, and the kenel of each component and ratio can be a kind of random change during its actual implementation, and its assembly layout
Kenel may also be increasingly complex.
As shown in figure 3, the present embodiment provides a kind of crystalline silicon/film silicon heterojunction solar battery 2 of double-side photic, it is described
Solar cell 2 includes：N-type silicon substrate, it is with opposite first surface and second surface；Window layer 21, is formed at the N-shaped
The first surface of silicon substrate, it include with wide optical band gap intrinsic amorphous silicon or microcrystal silicon 211 and N-shaped doping it is non-
Crystal silicon or microcrystal silicon 212；Back surface field layer 22, is formed at the second surface of the n-type silicon substrate, it include intrinsic amorphous silicon or
Microcrystal silicon 221 and the non-crystalline silicon or microcrystal silicon 222 of p-type doping；First transparent conductive film 23, is formed at the Window layer
21 surfaces；Second transparent conductive film 24, is formed at 22 surface of back surface field layer；First electrode 25, it is saturating to be made in described first
On bright conductive film 23；And second electrode 26, it is made on second transparent conductive film 24.
As an example, the silicon substrate is N-shaped crystalline silicon.
As an example, the n-type silicon substrate surface is corroded using chemical reagent or physical method etching makes rule
Concaveconvex structure, i.e. surface wool manufacturing, to reduce reflection loss of the n-type silicon substrate surface to sunlight, and using chemical reagent or
Person's ozone water solution, or cleaning treatment is carried out to surface using ultraviolet source, obtain clean n-type silicon substrate surface.
As an example, in the intrinsic amorphous silicon or microcrystalline silicon film of N-shaped crystalline silicon first surface deposition Window layer 21
211, in the intrinsic amorphous silicon or microcrystalline silicon film 212 of second surface deposition back surface field layer 22, it is heterogeneous to form crystalline silicon/thin film silicon
The dangling bonds on N-shaped crystalline silicon substrate surface are formed good passivation by junction interface using intrinsic amorphous silicon or microcrystalline silicon film,
So that the recombination-rate surface of the N-shaped crystalline silicon silicon substrate is in below 10cm/s, wherein, intrinsic amorphous silicon or microcrystal silicon
Thickness range is 3~20nm.
As an example, in the intrinsic amorphous silicon or microcrystalline silicon film 211 and the back surface field layer 22 of deposition Window layer 21
Oxygen atom is mixed in intrinsic amorphous silicon or microcrystalline silicon film 221 and forms the silica-base films of wide optics with gaps, suppress non-crystalline silicon or
Person's microcrystalline silicon film while obtains the sheet of high optical transmittance and low defect in the crystal epitaxy of n-type silicon substrate surface
Layer is levied, wherein, the incorporation of oxygen atom is 5 × 1019~5 × 1020cm-3。
As an example, deposited in the intrinsic amorphous silicon of N-shaped crystalline silicon substrate first surface or 211 surface of microcrystalline silicon film
Built in field is formed between N-shaped doped amorphous silicon or microcrystalline silicon film 212, with the n-type substrate, passes through the work of built in field
With collect N-shaped crystalline silicon substrate first surface near photo-generated carrier, wherein, the thickness range of Window layer is 4~10nm.
As an example, mix carbon atom into the N-shaped doped amorphous silicon or microcrystalline silicon film 212, formed amorphous or
Person's crystallite silicon carbon film, density the defects of to reduce N-shaped doped amorphous silicon or microcrystalline silicon film, expansion optical band gap width,
Wherein, the incorporation of carbon is 7 × 1019~2 × 1020cm-3。
As an example, on 221 surface of intrinsic amorphous silicon or microcrystalline silicon film of the N-shaped crystalline silicon substrate second surface
Built in field is formed between depositing p-type doped amorphous silicon or microcrystalline silicon film 222, with the n-type substrate, passes through built in field
Effect collect N-shaped crystalline silicon substrate second surface near photo-generated carrier, wherein, p-type doped amorphous silicon or microcrystal silicon
The thickness range of film 222 is 4~20nm.
As an example, depositing the first transparent conductive film 23 on 21 surface of Window layer, which has good
The transparent conductive film or thin laminar material of optical transmittance well, high electric conductivity and appropriate refractive index, are used for
The carrier of first surface is collected, while reduces reflection loss of the sunlight in window layer surface, first electrically conducting transparent is thin
Film 23 includes tin-doped indium oxide, mixes aluminium indium oxide, tungsten-doped indium oxide, mix titanium indium oxide, mix caesium indium oxide, Al-Doped ZnO, mix
Gallium zinc oxide, the stack combinations for mixing one or more thin-film materials in gallium aluminium zinc oxide, graphene.
As an example, depositing the second transparent conductive film 24 on 22 surface of back surface field layer, which has good
The transparent conductive film or thin laminar material of good electric conductivity and high work function, the current-carrying of second surface is collected for providing
Son, second transparent conductive film 24 include tin-doped indium oxide, mix aluminium indium oxide, tungsten-doped indium oxide, mix titanium indium oxide, mix caesium
Indium oxide, Al-Doped ZnO, gallium-doped zinc oxide, the superposition for mixing one or more thin-film materials in gallium aluminium zinc oxide, graphene
Combination.
The utility model also provides a kind of photovoltaic module, and the photovoltaic module utilizes metal interconnection wire or metal interconnection bar
The crystalline silicon of multiple double-side photics/film silicon heterojunction solar battery 2 is in series or in parallel is formed, the sun electricity
The Window layer 21 in pond 2 is arranged towards the smooth surface direction of photovoltaic module, the back side direction of back surface field layer 22 towards photovoltaic module,
Make the Window layer 21 of the solar cell 2 become main smooth surface.
As an example, the photovoltaic module front surface encapsulation material selection is to be reflected with high optical transmittance, low optical
The tempering blank glass or transparent resin material of rate, high loadability, to ensure to carry to the solar cell 2 for being encapsulated in inside
For sunlight irradiation, and provide carrying photovoltaic module transport, installation, wind pressure, load caused by accumulated snow.
As an example, it is the material with high optical reflectivity that the back side encapsulating material of the photovoltaic module, which is selected, so that
Be encapsulated in inside double-side photic crystalline silicon/film silicon heterojunction solar battery 2 receive back side encapsulating material reflected light and
Obtain photoelectric conversion efficiency and the gain with generated output.
As an example, the back side encapsulating material of the photovoltaic module is selected and made for the material with high optical transmittance, with
Make to be encapsulated in the double-side photic of inside crystalline silicon/film silicon heterojunction solar battery 2 receive back side environment reflected light and
Scatter the gain that light obtains photoelectric conversion efficiency and generated output.
As an example, installing metal edge frame in photovoltaic module edge, coating high strength sealing material, further improves photovoltaic
The leakproofness and load-carrying ability of component.
The production method that the utility model also provides a kind of crystalline silicon/film silicon heterojunction solar battery 2 of double-side photic,
Including step：A N-shaped crystalline silicon substrate is provided, it is with opposite first surface and second surface；In the n-type silicon substrate
First surface deposits the first intrinsic amorphous silicon or microcrystalline silicon film 211, while mixes oxygen atom, with the described first intrinsic amorphous
Amorphous either crystallite silica or silicon carbon film are formed in silicon or microcrystalline silicon film；In positioned at the first intrinsic of the first surface
Non-crystalline silicon or the non-crystalline silicon or microcrystal silicon 212 of the doping of microcrystalline silicon film surface depositing n-type, while carbon atom is mixed, with institute
State and amorphous or crystallite silicon carbon film are formed in the non-crystalline silicon or microcrystalline silicon film 212 of N-shaped doping；Served as a contrast in the N-shaped crystalline silicon
The second surface at bottom deposits the second intrinsic amorphous silicon or microcrystalline silicon film 221；In the second non-crystalline silicon positioned at the second surface
Or the non-crystalline silicon or microcrystal silicon 222 of microcrystalline silicon film surface depositing p-type doping；In the non-crystalline silicon or micro- of N-shaped doping
212 surface of crystal silicon forms the first transparent conductive film 23；Formed in the non-crystalline silicon of p-type doping or 222 surface of microcrystal silicon
Second transparent conductive film 24；In making first electrode 25 on first transparent conductive film 23；Transparent led in described second
Second electrode 26 is made on conductive film 24.
Further included as an example, providing a N-shaped crystalline silicon substrate in the first surface and second surface of the n-type silicon substrate
The step of carrying out making herbs into wool and being cleaned.
As an example, make the first intrinsic amorphous silicon or microcrystalline silicon film 211, the second intrinsic amorphous silicon or microcrystal silicon
Film 221, N-shaped doping non-crystalline silicon either microcrystal silicon 212, p-type doping non-crystalline silicon or microcrystal silicon 222 method include etc.
Gas ions enhancing vapour deposition process PE-CVD, metal fever catalytic chemical vapor deposition technique Cat-CVD and Hot Filament Chemical Vapor sink
One kind in area method Hot-wire CVD.
As an example, in the first surface and second surface deposition intrinsic non-crystalline silicon or crystallite of the N-shaped crystalline silicon substrate
Silicon thin film 211 and 221, while oxygen atom is mixed, with 211 He of first and second described intrinsic amorphous silicon or microcrystalline silicon film
Amorphous or crystallite silicon oxide thin film are formed in 221.
As an example, in 211 surface depositing n-type of the first intrinsic amorphous silicon positioned at the first surface or microcrystalline silicon film
The non-crystalline silicon or microcrystalline silicon film 212 of doping, meanwhile, carbon atom is mixed, with the non-crystalline silicon or microcrystal silicon adulterated in the N-shaped
Amorphous or crystallite silicon carbon film are formed in film 212.
As an example, in 221 surface depositing p-type of the second intrinsic amorphous silicon positioned at the second surface or microcrystalline silicon film
The non-crystalline silicon or microcrystalline silicon film 222 of doping.
The utility model disclose a kind of crystalline silicon/film silicon heterojunction solar battery 2 and photovoltaic module basic structure and
Production method, with reference to figure 3 and Fig. 6, for the technology and process detail during battery and establishment of component, includes the table of crystalline silicon
The deposition of face making herbs into wool and cleaning, non-crystalline silicon or microcrystalline silicon film, the deposition of transparent conductive film (hereinafter referred to as TCO thin film),
The formation of metal electrode, the making of conductive interconnections welding and production method can have multiple choices, and this patent is not made specifically
Regulation and limitation, according to the specific needs of 2 structure of film producing process and solar cell, from manufacture craft cost, equipment is even
Undertake the factors such as the technology preferences of personnel to consider, do not influence the effect of battery and component, also without departing from the base involved by this patent
This physical thought and implementation result, for example, crystal silicon chip can select pulling of crystals (CZ) or the class monocrystalline silicon piece, very of casting
The silicon chip of (FZ) monocrystalline is melted to area.Aqueous slkali doping corrosion had both may be selected in the making herbs into wool of monocrystalline silicon piece, and plasma also may be selected
Body etches.Cleaning can select conventional RCA to clean, and also may be selected with ozone water solution, or even directly with ultraviolet light
Reason, etc..Non-crystalline silicon or microcrystalline silicon film deposition can select plasma enhanced chemical vapor deposition (hereinafter referred to as PE-
CVD), microwave induced chemical vapor deposition (following MW-CVD), metal fever catalytic chemical gaseous phase deposition (following Cat-CVD), heat
Wire chemical is vapor-deposited (hereinafter referred to as Hot-wire CVD), etc..TCO thin film deposition can be with using plasma reactive deposition
(RPD) or a variety of methods and apparatus such as magnetron sputtering (PVD), electron beam plated film.Metal electrode can then use conventional silk
Wire mark brush, can also use metal wire direct combination technology, etc..The manufacturing process and technique of photovoltaic module are needed except back board packaging material
Beyond being made choice according to the characteristic of two-sided Shouguang solar cell 2, during other sealing materials and technique and general components make
The material of selection is identical with technology, is not the proprietary technology that this patent is limited, and does not influence specific implementation of the patent and right
The effect of battery and component.
Embodiment 1
The present embodiment using make based on PE-CVD amorphous silicon membranes depositing device and RPD transparent conductive films crystalline silicon/
Film silicon heterojunction solar battery 2, back board packaging material make double-side photic photovoltaic module using glass and illustrate.
Fig. 3 and Fig. 6 are referred to, is shown as the basic structure of solar cell 2 and photovoltaic module made by the present embodiment.
Basic raw material of the N-shaped monocrystalline silicon piece that CZ methods make as solar cell 2 is selected, the resistivity of silicon chip is 0.1
To between 20 Ω cm, thickness is between 100 to 200 microns, the ability that depends mainly on the size of equipment and can carry of thickness, with
It is principle that maintenance silicon chip is not damaged, does not influence the yield rate of battery.
Surface corrosion is carried out to silicon chip first, removes caused surface damage during silicon chip is made, by pure
After water cleaning, using potassium hydroxide or sodium hydrate aqueous solution, the flocking additive such as addition surfactant, carries out silicon chip
Making herbs into wool is handled, and forms uniform " pyramid " suede structure in silicon chip surface, pyramidal size is using tetrahedral base as base
Standard, between 2 to 15 microns, the size of pyramid size is according to the characteristic of subsequent thin film depositing device and electrode fabrication equipment
Performance determines.
Monocrystalline silicon piece after making herbs into wool removes Surface Oxygen SiClx after RCA1 and RCA2 cleanings, using the aqueous solution of hydrofluoric acid
Layer, imported into amorphous silicon membrane depositing device after the rinsing of sufficient pure water.
Amorphous silicon membrane depositing device selects radio frequency or very high frequency plasma enhancing chemical vapor depsotition equipment, plasma
The frequency of body is 13.56MHz, i.e. RF PE-CVD, and frequency also may be selected in N-shaped and p-type doped amorphous silicon or microcrystalline silicon film deposition
Rate is the very high frequency(VHF) VHF-CVD equipment of 27.12MHZ or 40MHz.PE-CVD equipment has four single process cavities, each chamber
Separated between room by vacuum valve, the carrying of pallet is realized by the automation equipment of transmission mechanism.Under normality, vacuum pump maintains
In working status, all processing chambers are made to be maintained at vacuum state.
Monocrystalline silicon piece is placed on pallet, tray transport to first process cavity, carries out the of back surface field layer 22 first
The deposition of two intrinsic amorphous silicon film layers 221.Silicon chip is carried out after heating reaches design temperature, to be passed through process gas and start film
Deposition, silicon chip surface temperature is between 150 between 200 degree.Process gas is high-purity SiH4, H2And CO2Mixed gas, if
The target for determining amorphous silicon membrane sedimentary condition is to try to the degree of disorder of increase intrinsic amorphous silicon layer, makes amorphous silicon membrane to crystalline silicon
Surface has good passivation effect, is passed through CO2The purpose of gas is intrinsic amorphous silicon film is mixed a small amount of oxygen atom, is formed
Amorphous silica, while suppress non-crystalline silicon and form crystal structure in surface of crystalline silicon.The thickness of second intrinsic amorphous silicon film layer 221
Between 3 to 10 nanometers, optical band gap width is 1.6 between 1.8eV, and the hydrogen content in film is between 8 to 20%.
Tray transport is carried out back surface field layer 22p types amorphous silicon membrane 222 to second process cavity to deposit.Equally, to silicon chip
After heating reaches design temperature, be passed through process gas and start thin film deposition.Silicon chip surface temperature between 150 250 degree it
Between, process gas is high-purity SiH4, H2And B2H6Mixed gas, setting amorphous silicon membrane sedimentary condition target be to make p-type
Amorphous silicon layer structure factor has the feature of microcrystal silicon structure.The thickness of p-type amorphous thin Film layers 222 between 4 to 20 nanometers,
Optical band gap width is near 1.6eV, and the hydrogen content in film is between 8 to 20%.
Pallet is removed from second process cavity, silicon wafer turnover, makes the face-down of deposition of amorphous silicon films, then
Tray transport is carried out to the 3rd process cavity the deposition of the intrinsic amorphous silicon film layer 211 of Window layer 21.The intrinsic amorphous silicon
The process conditions and film characteristics of film 211 are identical with the intrinsic amorphous silicon film layer 221 of the back surface field layer 22 of first process cavity.
Tray transport is carried out Window layer 21n types amorphous thin Film layers 212 to the 4th process cavity to deposit.Equally, to silicon
Piece after heating reaches design temperature, be passed through process gas and start thin film deposition.Silicon chip surface temperature is 250 degree between 150
Between, process gas is high-purity SiH4, H2, PH3And CO2Mixed gas, setting amorphous silicon membrane sedimentary condition target be
Make N-shaped amorphous silicon layer structure factor that there is the feature of microcrystal silicon structure, be passed through CO2The purpose of gas is in N-shaped amorphous silicon membrane
Middle incorporation carbon atom, forms silicon carbon film, widens the band gap of n-type window layer 212, reduces the defects of film density.N-shaped amorphous
The thickness of silicon carbon film is between 4 to 10 nanometers, and optical band gap width is near 1.6 to 2.4eV, and the hydrogen content in film is 8
To between 15%.
The chip transmission of two sides deposition of amorphous silicon films lamination to RPD equipment, on silicon chip two sides, deposition TCO is thin
Film.
Silicon chip is placed on the pallet equipped with opening, p-type back surface field layer 22 downward, carries out silicon chip heating and reaches setting temperature
After degree, it is passed through process gas and starts thin film deposition, for silicon chip surface temperature between 80-200 degree, process gas is argon gas and oxygen
Mixed gas, target is tungsten-doped indium oxide (IWO), and thin effective film is configured according to photovoltaic module application scenarios,
Adjusted in principle 40 between 120nm, surface resistivity is between 20-100 Ω/square.
After 22 face of p-type back surface field layer deposits, silicon wafer turnover, in 21 face depositing TCO films of n-type window layer, technique bar
Part is essentially identical with the above, thickness 80nm of TCO thin film or so, surface resistivity 30-80 Ω/square, optical wavelength 350-
Average optical transmitance between 1200nm is more than 90%.
Metal electrode is made in 22 face of back surface field layer and 21 face of Window layer respectively using silk-screen printing, raw material are low-temperature setting
Silver paste.Thin grid line and main gate line are printed in 22 face of back surface field layer first, after low temperature drying, in 21 face of Window layer printing surface electricity
Pole, carries out hot setting after low temperature drying.Low temperature drying temperature is between 100 to 160 degree, and hot setting temperature is because being made
Silver paste material difference has larger difference, generally between 180 to 250 degree.
By process above process, the making of double-side photic crystalline silicon/film silicon heterojunction solar battery 2 is completed, is passed through
After crossing testing, sorting, the making of photovoltaic module is carried out, its basic structure is as shown in Figure 3.
Fig. 4 shows the utility model technology (curve a) and the prior art (double-side photic crystalline silicon/thin film silicon of curve b)
Heterojunction solar battery 2 is in AM1.5,100mW/cm2Current -voltage curve under standard illumination condition compares, and can substantially see
Go out, the former electric current, voltage and fill factor, curve factor has more or less increase, and final effect improves the transfer efficiency of battery
More than 0.5%.
Fig. 5 shows the utility model technology (curve a) and the prior art (double-side photic crystalline silicon/thin film silicon of curve b)
Internal quantum efficiency (the Internal Quantum Efficiency of heterojunction solar battery 2:IQE) curve compares, can be obvious
Find out, the former is substantially improved the spectral response in short wavelength and visible region, this and the result phase one shown by Fig. 4
Cause.
The battery after test stepping according to n-type window layer 21 upward, 22 direction directed downwardly of p-type back surface field layer arrangement, utilize
Metal welding band connects battery, i.e. the front electrode of a battery is connected with the backplate of adjacent cell, and so on shape
Into battery substring, the quantity of battery is determined according to the electric current of battery, voltage and relevant standard in each substring, multiple
Battery substring carries out in series or in parallel, one regular square formation of formation, and extraction electrode.
In accordance with the order from top to bottom, surface encapsulation glass 4, sealing material 3, battery array 2, sealing material 5, the back side
Encapsulating material 6 is superimposed, and is put into the vacuum laminator with heating environment and is heated to sealing material required temperature, utilizes
Vacuum and mechanical load apply certain pressure, are bound tightly together packaged glass and cell piece.The photovoltaic module
Back side encapsulating material select and make for the material with high optical transmittance, so as to be encapsulated in the crystal of the double-side photic of inside
Silicon/film silicon heterojunction solar battery 2 receives the reflected light of back side environment and scattering light obtains photoelectric conversion efficiency and power generation
The gain of power, the optical transmittance of the back side encapsulating material is more than 85%
Wiring hole extraction wire from the back side or marginal portion, in edge coating fluid sealant and installs metal edge frame 7,
The photovoltaic module of double-side photic is fabricated to, its basic structure is as shown in Figure 6.
Under the conditions of Fig. 7 shows the photovoltaic module outdoors, (curve a), front screening are blocked in the back side using black shadow shield
Gear (curve b) and do not block (current -voltage curve under the conditions of curve c), it can be clearly seen that, front there is no the sun
Under conditions of light irradiation, also there is current-voltage output characteristic at the back side of photovoltaic module, illustrate the back side receive the reflected light on ground with
The scattering light of surrounding environment also produces power generation output.Under conditions of front and back receives light irradiation at the same time, photovoltaic module is total
Power generation output, almost front power generation output and the back side power generation output superposition.
Fig. 8 is shown as the utility model technology (curve a) and the prior art (double-side photic crystalline silicon/film of curve b)
Actual power generation of the silicon heterogenous photovoltaic module in some day compares., it is apparent that the former actual power in some day
Amount significantly improves.
From above procedure as can be seen that the photovoltaic module makees the N-shaped amorphous silicon membrane of wide optical band gap, low-defect-density
For Window layer 21, absorption of the Window layer 21 to sunlight can be effectively reduced, the electric current of solar cell 2 is improved, so as to improve light
The transfer efficiency and output power of component are lied prostrate, meanwhile, the back side of photovoltaic module receives the reflected light at the back side and scattering light produces
Electric current and voltage output, are superimposed upon on positive electric current and voltage output, further improve the power generation output of photovoltaic module, show
The superiority of double-side photic solar cell 2 and photovoltaic module in terms of the gain that generates electricity is shown.
More than, PE-CVD equipment has four independent process cavities, and four layers of amorphous silicon membrane are respectively in four different techniques
Being deposited respectively in chamber, this construction is that can improve process rate a little, avoids the cross influence between different films,
Especially between p-type and N-shaped doped layer and doped layer is to the influence caused by the pollution of intrinsic amorphous silicon layer.However, according to setting
Standby condition and production requirement, the quantity of process cavity can also reduce, for example, the intrinsic amorphous silicon of Window layer 21 and back surface field layer 22 is thin
Film can deposit in same chamber, or even N-shaped amorphous silicon membrane can also share same process cavity with intrinsic amorphous silicon, this
Have no effect on the implementation result of the patent content.
Equally, TCO thin film is prepared using RPD equipment, under similarity condition, can also use magnetron sputtering apparatus, or even magnetic
Control sputtering and RPD combinations, these changes nor affect on the implementation result for changing patent.
Equally, metal electrode, also can be using plating or the method for metal wire direct combination in addition to silk-screen printing, these
Change nor affects on the performance of battery and component, without departing from the implementation result of the patent.On the contrary, the patent is easier to receive correlation
The importing of new technology, beyond inside battery structure, improves the performance of battery and component.
Embodiment 2
The present embodiment is with one difference of embodiment, is set using metal fever catalytic chemical gaseous phase deposition (Cat-CVD)
It is standby to replace PE-CVD equipment making amorphous silicon membranes.Compared with PE-CVD, the sedimentation rate of Cat-CVD is low, technology stability and
It is reproducible；The structure factor of amorphous silicon membrane can obtain open-circuit voltage and the filling of higher closer to microcrystal silicon structure
The factor, so as to obtain the transfer efficiency of higher.Due to the principle of hot-wire chemical gas-phase deposition (Hot-wire CVD) and Cat-CVD
Essentially identical with constructing, the present embodiment actually includes two methods of Cat-CVD and Hot-wire CVD.
The selection of silicon chip in the embodiment, making herbs into wool and cleaning part are identical with embodiment one, are not repeated.
Cat-CVD has four independent process chambers, is separated between each chamber by vacuum valve, is respectively used to deposition Window layer
211 intrinsic amorphous silicons, Window layer 212n types non-crystalline silicon, 221 intrinsic amorphous silicon of back surface field layer, back surface field layer 222p type non-crystalline silicons, normality
Under, vacuum pump maintains working status, all processing chambers is maintained at vacuum state, passes through transmission mechanism between each chamber
Realize the carrying of pallet.
Silicon chip by making herbs into wool and cleaning is placed in Cat-CVD pallets, imports the pretreatment chamber of Cat-CVD equipment
(L- chambers), after vacuum pump is to chamber vacuumize process, imports hydrogen, or the mixed gas of hydrogen and argon gas, opens in chamber
Heating unit silicon chip is heated.The background vacuum of pretreatment chamber reaches below 0.1Pa, imports hydrogen back cavity
Indoor pressure maintains 0.1Pa, and silicon chip heating-up temperature is between 120-250 DEG C, 240 seconds or so heating time.
After heating, tray transport to first process cavity, first surface first intrinsic amorphous silicon film 211 is carried out
Deposition.SiH is passed through into process cavity4And H2Mixed gas, reach setting pressure after, heated filament electrified regulation, the temperature of heated filament was both
Ensure process gas is effectively decomposed to form amorphous silicon membrane deposition, its radiant heat also has heating function to silicon chip, therefore, reaches
To during design temperature, start amorphous silicon membrane deposition naturally.Heated filament surface temperature is between 1500 to 2000 degree, silicon chip table
Face temperature is between 150 to 200 degree.The target for setting hot-wire temperature is that the structure factor for making intrinsic amorphous silicon has microcrystalline silicon junction
The feature of structure.The thin effective film of intrinsic amorphous silicon between 3 to 20 nanometers, optical band gap width 1.6 to 1.8eV it
Between, the hydrogen content in film is between 10 to 20%.
Tray transport is carried out to second process cavity the deposition of Window layer 212n type amorphous silicon membranes.Equally, to technique
SiH is passed through in chamber4、H2And PH3Mixed gas, reach setting pressure after, heated filament electrified regulation.The surface temperature of heated filament exists
Between 1800 to 2400 degree, for silicon chip surface temperature between 180 between 250 degree, the target for setting sedimentary condition is to make N-shaped amorphous
The Si layer structure factor has the feature of microcrystal silicon structure.The effective thickness of amorphous silicon membrane is between 4 to 10 nanometers, optical band gap
Width is near 1.6 to 2.4eV, and the hydrogen content in film is between 8 to 20%.
Pallet is removed from second process cavity, silicon wafer turnover, makes the face-down of deposition of amorphous silicon films, then
Tray transport is carried out the second intrinsic amorphous silicon of second surface film 221 to the 3rd process cavity to deposit.The intrinsic amorphous silicon is thin
The process conditions and film characteristics of film are identical with first process cavity.
Tray transport is carried out back surface field layer 222p types amorphous silicon membrane deposition to the 4th process cavity.Equally, to process cavity
In be passed through SiH4、H2And B2H6Mixed gas, reach setting pressure after, heated filament electrified regulation.The surface temperature of heated filament is 1800
To between 2400 degree, for silicon chip surface temperature between 150 between 250 degree, the target for setting sedimentary condition is to make p-type amorphous silicon layer
Structure factor has the feature of microcrystal silicon structure.The effective thickness of amorphous silicon membrane is between 4 to 20 nanometers, optical band gap width
Near 1.6eV, the hydrogen content in film is between 8 to 15%.
The chip transmission of two sides deposition of amorphous silicon films lamination to TCO thin film making apparatus, sink on silicon chip two sides
Product TCO thin film.The deposition process of TCO thin film and the structure of production method and production method are identical with embodiment one, no longer heavy
It is multiple.
Embodiment 3
As shown in figure 9, the present embodiment and the difference of embodiment one are, the backboard with high optical reflectivity is utilized
Encapsulating material 8 replaces back-panel glass to make photovoltaic module.With it is two-sided use the glass of high optical transmittance compared with, back veneer material handle
The back side of solar cell 2 is reflexed to through solar cell 2 and the sunlight incided between solar cell 2, makes solar cell 2
The back side produce power generation output, be added on the power generation output of front, increase the generated output of photovoltaic module.The photovoltaic module is more
It is suitable for the occasions such as the roof of the reflective condition difference in the back side.
The battery after test stepping according to n-type window layer 21 upward, 22 direction directed downwardly of p-type back surface field layer arrangement, utilize
Metal welding band connects battery, and the front electrode of a battery is connected with the backplate of adjacent cell, and so on formed
Battery substring, the quantity of battery is determined according to the electric current of battery, voltage and relevant standard in each substring, multiple electricity
Pond string carries out in series or in parallel, one regular square formation of formation.For the safety of photovoltaic module, the both ends of each substring
One diode of reverse parallel connection or other protection components, and extraction electrode.
In accordance with the order from top to bottom, packaged glass, sealing material, battery array, sealing material, high reflectance backboard
Material is superimposed, and is put into the vacuum laminator with heating environment and is heated to sealing material required temperature, utilizes vacuum
Apply certain pressure with mechanical load, be bound tightly together packaged glass and cell piece.
Wiring hole extraction wire from the back side or marginal portion, in edge coating fluid sealant and installs metal edge frame,
The photovoltaic module of double-side photic is fabricated to, its basic structure is as shown in Figure 9.
So the utility model effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above embodiments are only illustrative of the principle and efficacy of the utility model, new not for this practicality is limited
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
God and all equivalent modifications completed under technological thought or change, should be covered by the claim of the utility model.
Claims (13)
1. the crystalline silicon of a kind of double-side photic/film silicon heterojunction solar battery, it is characterised in that the solar cell includes：
N-type silicon substrate, it is with opposite first surface and second surface；
Window layer, is formed at the first surface of the n-type silicon substrate, it include intrinsic amorphous silicon with wide optical band gap or
Microcrystal silicon and the non-crystalline silicon or microcrystal silicon of N-shaped doping；
Back surface field layer, is formed at the second surface of the n-type silicon substrate, it includes intrinsic amorphous silicon or microcrystal silicon and p-type is mixed
Miscellaneous non-crystalline silicon or microcrystal silicon；
First transparent conductive film, is formed at the window layer surface；
Second transparent conductive film, is formed at the back surface field layer surface；
First electrode, is made on first transparent conductive film；
Second electrode, is made on second transparent conductive film.
2. the crystalline silicon of double-side photic according to claim 1/film silicon heterojunction solar battery, it is characterised in that：Institute
It is N-shaped crystalline silicon to state silicon substrate.
3. the crystalline silicon of double-side photic according to claim 1/film silicon heterojunction solar battery, it is characterised in that：
First and second surface difference deposition intrinsic non-crystalline silicon or microcrystalline silicon film of the N-shaped crystalline silicon substrate, formation crystalline silicon/
The heterojunction boundary of thin film silicon, the suspension key-shaped using intrinsic amorphous silicon or microcrystal silicon to the N-shaped crystalline silicon substrate surface
Into good passivation effect so that the recombination-rate surface of the n-type silicon substrate in below 10cm/s, wherein, intrinsic amorphous silicon
Or the thickness range of microcrystal silicon is 3~20nm.
4. the crystalline silicon of double-side photic according to claim 1/film silicon heterojunction solar battery, it is characterised in that：To
Oxygen atom is mixed in the intrinsic amorphous silicon or microcrystal silicon, forms silicon oxide thin film, suppresses non-crystalline silicon or microcrystalline silicon film in n
The crystal epitaxy of type surface of silicon, while high optical transmittance and the intrinsic layer of low defect are obtained, wherein, oxygen atom
Incorporation be 5 × 1019~5 × 1020cm-3。
5. the crystalline silicon of double-side photic according to claim 1/film silicon heterojunction solar battery, it is characterised in that：
The intrinsic amorphous silicon of the N-shaped crystalline silicon substrate first surface either microcrystalline silicon film surface depositing n-type doped amorphous silicon or
Built in field is formed between microcrystalline silicon film, with the n-type substrate, N-shaped crystalline silicon substrate is collected by the effect of built in field
Photo-generated carrier near first surface, wherein, the thickness range of Window layer is 4~10nm.
6. the crystalline silicon of double-side photic according to claim 1/film silicon heterojunction solar battery, it is characterised in that：To
The n types non-crystalline silicon either mixes carbon atom in microcrystalline silicon film and forms amorphous or crystallite silicon carbon film, non-to reduce N-shaped
The defects of crystal silicon or microcrystalline silicon film density, expansion optical band gap width, wherein, the incorporation of carbon is 7 × 1019~2 ×
1020cm-3。
7. the crystalline silicon of double-side photic according to claim 1/film silicon heterojunction solar battery, it is characterised in that：
The intrinsic amorphous silicon of the N-shaped crystalline silicon substrate second surface either microcrystalline silicon film surface depositing p-type doped amorphous silicon or
Built in field is formed between microcrystalline silicon film, with the n-type substrate, N-shaped crystalline silicon substrate is collected by the effect of built in field
Photo-generated carrier near second surface, wherein, the thickness range of back surface field layer is 4~20nm.
8. the crystalline silicon of double-side photic according to claim 1/film silicon heterojunction solar battery, it is characterised in that：In n
The window layer surface of type crystalline silicon substrate first surface deposits the first transparent conductive film, which has good
The transparent conductive film or thin laminar material of optical transmittance, high electric conductivity and appropriate refractive index, for collecting
The carrier of first surface, while reflection loss of the sunlight in window layer surface is reduced, the first transparent conductive film bag
Tin-doped indium oxide is included, aluminium indium oxide, tungsten-doped indium oxide is mixed, mixes titanium indium oxide, mix caesium indium oxide, Al-Doped ZnO, mix gallium oxidation
Zinc, the stack combinations for mixing one or more thin-film materials in gallium aluminium zinc oxide, graphene.
9. the crystalline silicon of double-side photic according to claim 1/film silicon heterojunction solar battery, it is characterised in that：In n
The back surface field layer surface of type crystalline silicon substrate second surface deposits the second transparent conductive film, which, which has, well leads
The transparent conductive film or thin laminar material of electrical property and high work function, the carrier of second surface, institute are collected for providing
State the second transparent conductive film include tin-doped indium oxide, mix aluminium indium oxide, tungsten-doped indium oxide, mix titanium indium oxide, mix caesium indium oxide,
Al-Doped ZnO, gallium-doped zinc oxide, the stack combinations for mixing one or more thin-film materials in gallium aluminium zinc oxide, graphene.
A kind of 10. photovoltaic module, it is characterised in that：The photovoltaic module is using metal interconnection wire or metal interconnection bar multiple
Crystalline silicon/film silicon heterojunction solar battery of double-side photic as claimed in any one of claims 1 to 9 wherein is in series or in parallel
Form, the Window layer of the solar cell is towards the smooth surface direction of photovoltaic module, and back surface field layer is towards the back side side of photovoltaic module
To being arranged, make the Window layer of the solar cell become main smooth surface.
11. photovoltaic module according to claim 10, it is characterised in that：The photovoltaic module front surface encapsulation material selection
For with high optical transmittance, low optical reflectivity, high loadability tempering blank glass or transparent resin material, to
Ensure to provide sunlight irradiation to the solar cell for being encapsulated in inside, and the transport of carrying photovoltaic module, installation, wind pressure, product are provided
Load caused by snow.
12. photovoltaic module according to claim 10, it is characterised in that：The back side encapsulating material of the photovoltaic module is selected
For the material with high optical reflectivity, so that the silicon heterogenous sun electricity of the crystalline silicon/film for being encapsulated in the double-side photic of inside
Pond receives the reflected light of back side encapsulating material and obtains the gain of photoelectric conversion efficiency and generated output.
13. photovoltaic module according to claim 10, it is characterised in that：The back side encapsulating material of the photovoltaic module is selected
For the material with high optical transmittance, so that the silicon heterogenous sun electricity of the crystalline silicon/film for being encapsulated in the double-side photic of inside
Pond receives the reflected light of back side environment and scattering light obtains the gain of photoelectric conversion efficiency and generated output.
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