CN103594535A - Silicon nano wire quantum well solar cell and preparation method thereof - Google Patents
Silicon nano wire quantum well solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN103594535A CN103594535A CN201310012321.9A CN201310012321A CN103594535A CN 103594535 A CN103594535 A CN 103594535A CN 201310012321 A CN201310012321 A CN 201310012321A CN 103594535 A CN103594535 A CN 103594535A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- quantum well
- silicon
- prepare
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 77
- 239000010703 silicon Substances 0.000 title claims abstract description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 239000002070 nanowire Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 29
- 238000005516 engineering process Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 101710134784 Agnoprotein Proteins 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000011260 aqueous acid Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 5
- 229910004205 SiNX Inorganic materials 0.000 abstract description 4
- 238000000862 absorption spectrum Methods 0.000 abstract description 4
- 238000001228 spectrum Methods 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 3
- 230000031700 light absorption Effects 0.000 abstract description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 2
- 239000011787 zinc oxide Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 235000013339 cereals Nutrition 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229940096017 silver fluoride Drugs 0.000 description 1
- REYHXKZHIMGNSE-UHFFFAOYSA-M silver monofluoride Chemical compound [F-].[Ag+] REYHXKZHIMGNSE-UHFFFAOYSA-M 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003911 water pollution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System, e.g. Si-SiGe superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a silicon nano wire quantum well solar cell. A Ti/Pd/Ag grid electrode, a transparent aluminum-doped zinc oxide (AZO) conductive layer film, an n<+> ohmic contact layer, an n layer, an nc-Si:H/SiNx superlattice quantum well, a p<+> ohmic contact layer and an AL back electrode are sequentially arranged along an incident sunshine direction, a solar cell employs a p-type silicon nano wire array to support the nc-Si:H/SiNx superlattice quantum well. The solar cell preparation method is further disclosed. The solar cell has advantages of high light tripping, high efficiency, low cost and long service life. A gradual change type quantum well material is formed at a surface of the silicon nano wire array, so a light tripping effect of the solar cell is greatly improved, a light absorption spectrum of the solar cell is further widened, and the approximate full-spectrum nc-Si:H/SiNx superlattice quantum well solar cell is formed.
Description
Technical field
The present invention relates to the technical field of new energies such as nanometer technology and photovoltaic technology, designed and a kind ofly usingd silicon nanowires as support, on silicon nanowires, deposit nc-Si:H and SiN
xform the novel silicon nano wire solar cell of superlattice quantum well material.
Background technology
Traditional energy is if coal, oil, natural gas are by approach exhaustion.The environmental pollution that they cause is very serious, as water pollution, air pollution, dust pollution etc. serious harm people's healthy and living environment.In the face of the continuous deterioration of global energy shortage crisis and biological environment, countries in the world all utilize new forms of energy in positive research and development.Regenerative resource especially solar energy is more and more subject to people's attention, and photovoltaic application is the focus of research as the important channel of solar energy utilization always.And the core devices of solar energy power generating is exactly solar cell.From aspect overall merits such as energy conversion efficiency, production cost, device useful life and practical application area, Si base solar cell has obvious advantage undoubtedly, and occupies this leading Developmental Status always.And in Si base solar cell, the conversion efficiency of p-n junction single crystalline Si solar cell is the highest, technology is also ripe.But, owing to making this class solar cell, need to consume a large amount of Si materials.So as how relatively low production cost, become the important topic of pendulum in face of people just realize the Si base solar cell of efficient conversion efficiency.
Current business-like solar cell mainly be take first generation monocrystalline silicon, polysilicon solar cell and second generation amorphous silicon film solar battery as main.Although wherein first generation solar cell efficiency is high, cost is also high; Second generation solar cell cost is low, but efficiency low, unstable, there is poisonous element, need the shortcomings such as rare metal.Therefore for solar energy is accepted by more people, must reduce first generation silica-based solar cell production cost or improve second generation silica-based solar cell conversion efficiency.Analyze the problem that the first generation and second generation solar cell exist, can be summarized as following four main aspects: first, silica-base material is prepared the restriction of technological level, make it be difficult to obtain structure and the photoelectric characteristic with expection requirement, so cause the photovoltaic parameter of solar cell can not meet design objective; The second, in the first generation and second generation solar cell, need independent light trapping structure, the effective p-n junction area that carries out opto-electronic conversion is less; The 3rd, only adopt single band gap photovoltaic material to make solar cell, because energy is less than this band gap photon, can not be absorbed and causes low energy loss, and be greater than the excess energy of this band gap photon, with the form of heat energy, scatter and disappear, thereby photon energy is not fully utilized; The 4th, at current p-n junction and p-i-n type (p
+-p-i-n-n
+) in solar cell, a photon can only inspire an electron-hole pair.
Through patent retrieval, silicon nano line/non crystal heterogeneous agglomeration solar battery (CN101262024A) patent and a kind of novel structural silicon nanometer line solar battery (CN101369610A) patent utilization wet corrosion technique are prepared silicon nanowire array, and utilize the PECVD technology amorphous silicon of growing on p-type monocrystalline silicon nano line, form respectively p-n and p-i-n structure, then utilize magnetron sputtering method to prepare ITO nesa coating, finally use again mask method at ITO conductive film surface deposition Ti/Pd/Ag as front electrode, at p-type silicon base backside deposition metallic aluminium film, after sintering as backplate, thereby make silicon nanowires solar cell.Nc-Si:H/SiN
xthe material of superlattice quantum well solar cell (CN102157594 A) patent utilization PECVD layer by layer deposition deposition techniques heterogeneity is prepared the p that has of plane in TCO transparency electrode
+ohmic contact layer, p layer, nc-Si:H/SiN
xsuperlattice quantum well layer, n layer, n
+the quantum well solar cell of ohmic contact layer and ZnO/Al back electrode.
Silicon nano line/non crystal heterogeneous agglomeration solar battery (CN101262024A) patent and a kind of novel structural silicon nanometer line solar battery (CN101369610A) patent only adopt the amorphous silicon material with single band gap to make solar cell, the photon that is less than this band gap due to energy can not be absorbed and cause low energy loss, and be greater than the excess energy of the photon of this band gap, form with heat energy is scattered and disappeared, thereby causes photon energy to be not fully utilized.Nc-Si:H/SiN
xsuperlattice quantum well solar cell (CN102157594 A) patent adopts traditional plane battery structure, not only surface reflectivity is higher to make it, and the effective photoelectric conversion surface that can accept illumination is long-pending limited, between plane battery upper/lower electrode, very long carrier transport distance causes carrier collection efficiency very low in addition.
Summary of the invention
For problems of the prior art, the present invention utilizes optics and the electrology characteristic of one-dimensional nano line uniqueness, and the efficiency of solar cell, spectral response etc. are significantly affected and improve solar cell properties, raise the efficiency, and the band gap adjustability of nano-silicon and prepared and a kind ofly usingd silicon nanowires as the nc-Si:H/SiN supporting in conjunction with the good barrier properties of many silicon nitrides
xsuperlattice quantum well nano wire solar cell.
Silicon nanowires quantum well solar cell is followed successively by Ti/Pd/Ag grid electrode, transparent Al-Doped ZnO (AZO) membrane of conducting layer, n along sunlight incident direction
+ohmic contact layer, n layer, nc-Si:H/SiN
xsuperlattice quantum well, p-type silicon nanowire array, p
+ohmic contact layer and and Al back electrode.Every thickness in monolayer of Nc-Si is controlled at 9 ± 0.5 nm, and the cycle is 45 ± 5 nm; SiN
xevery thickness in monolayer be controlled at 9 ± 0.5 nm, the cycle is 45 ± 5 nm.
The silicon nanowires of this kind of battery plays sunken light, supports nc-Si:H/SiN
xthe effect of superlattice quantum well layer and the effective photoelectric conversion region of expansion area, the radial transport of photo-generated carrier has been reduced its transmission range greatly simultaneously, has improved collection efficiency.
In superlattice quantum well material in battery, nc-Si layer as thin as a wafer serves as the quantum well layer of a sealing charge carrier, nc-Si:H Film Optics band gap forms transition structure along sunlight incident direction successively, has expanded solar cell to the absorption spectra of light, raising light absorption total amount and absorption efficiency; Keep second generation hull cell advantage of low cost simultaneously.
A kind of preparation method of silicon nanowires quantum well solar cell adopts electroless plated metal auxiliary etch technology to prepare silicon nanowire array; Utilize successively PCVD technology on silicon nanowire array, alternately to prepare nc-Si/SiN
xsuperlattice quantum well; Utilize PCVD technology to prepare n on nc-Si/SiNx superlattice quantum well
+ohmic contact layer, n layer; Adopt technique for atomic layer deposition to prepare transparent Al-Doped ZnO (AZO) membrane of conducting layer; Utilize technique for atomic layer deposition to be deposited on n
+deposit transparent Al-Doped ZnO (AZO) membrane of conducting layer on layer; Utilize mask method to prepare Ti/Pd/Ag grid electrode, be positioned on transparent AZO conductive membrane layer; Utilize PCVD technology to have the silicon chip back side of silicon nanowire array to prepare p long
+ohmic contact layer; Utilize sputtering technology at the p at the back side of silicon chip
+on ohmic contact layer, prepare Al back electrode; Carry out solar panel etching and encapsulation subsequent technique.
Silicon nanowire array adopts electroless deposition of silver auxiliary etch method, and etching solution is for containing AgNO
3hF aqueous acid, wherein the amount of substance concentration of HF acid is 3-5 mol/L, AgNO
3amount of substance concentration be 0.01-0.05 mol/L, etching 10-60min under 20-50 ℃ of condition; After rinsing well with deionized water, by amount of substance concentration, be the KOH aqueous solution etching 10-60s of 0.1-1 mol/L again, finally with deionized water, rinse well, and dry up with nitrogen.
Diameter and the cycle of nano-array prepared by employing electroless deposition of silver auxiliary etch method are respectively 50-200 nm and 350-650 nm.
Nc-Si/SiN
xsuperlattice quantum well, n
+ohmic contact layer, p
+ohmic contact layer adopts successively alternating deposit; Sedimentary condition is base vacuum 1.6 * 10
-4pa, depositing temperature, at 300 ℃, adopts the fixedly grain size of direct current (DC) bias 200V control nc-Si:H to remain on 2-3 nm; Regulate radio-frequency power 50 W-250 W to control nc-Si:H crystalline state compositions, prepare optical band gap quantum-well materials from small to large successively from the inside to the outside; Nc-Si and SiN
xthickness by controlling the film growth time, control, every thickness in monolayer is controlled at 9 ± 0.5 nm, the cycle is 45 ± 5 nm.
Utilize successively alternating deposit nc-Si:H/SiN of PECVD
xsuperlattice quantum well material.
Sedimentary condition used, base vacuum is 1.6 * 10
-4pa, radio-frequency power is 50～250W (frequency is 13.56MHz), and depositing temperature is at 300 ℃, and direct current (DC) bias is 200V, and reaction pressure is 200Pa.
The hydrogen thinner ratio of silane used is 5%, and hydrogen and nitrogen are 99.9999% high-purity gas.Hydrogen thinner ratio [the SiH of silane used
4]/[SiH+H
2] be 5%; Utilize PECVD method to prepare p
+type silicon thin film, boron doping rate β
1=B/Si=10%; Utilize PECVD method to prepare N-shaped silicon thin film, phosphorus doping rate β
2=B/Si=5%; Utilize PECVD method to prepare n
+type silicon thin film, phosphorus doping rate β
3=B/Si=10%.
Utilize technique for atomic layer deposition to be deposited on n
+deposit transparent Al-Doped ZnO (AZO) membrane of conducting layer on layer, in Al-Doped ZnO (AZO), aluminium content is 0.86%, and depositing temperature is 200 ℃, and deposit thickness is 30-70nm.
Utilize sputtering technology at the p at the back side of silicon chip
+on ohmic contact layer, prepare Al back electrode, before sputter, base vacuum is 1.6 * 10
-4pa, importing gas flow is 80-100ml/min, employing Ar is protective gas.
Novel solar battery structure provided by the invention, this novel solar cell has the advantage of " high falling into light, high efficiency, low cost and long-life ".On silicon nanowire array surface, form gradual change type quantum-well materials, greatly improved solar cell and fallen into light effect, widened the optical absorption spectra of solar cell simultaneously, formed a kind of nc-Si:H/SiN of approximate full spectrum
xsuperlattice quantum well solar cell.And had obvious quantum effect, and can produce multiple excitating performance, a photon can produce a plurality of electron-hole pairs.
Adopt technical scheme of the present invention to have novel structural silicon nanometer line quantum well solar cell, light absorpting ability is strong, photoelectricity dress changes that efficiency is high, long service life and cost low.
Accompanying drawing explanation
Fig. 1 utilizes electroless deposition of silver auxiliary etch legal system for the schematic diagram of silicon nanowire array in the present invention.
Fig. 2 is silicon nanowire array reflectivity and polished silicon slice reflectivity comparison diagram.
Fig. 3 is the Energy Loss Analysis schematic diagram of solar cell.
Fig. 4 is nano wire nc-Si:H/SiN of the present invention
xthe band gap schematic diagram of superlattice quantum well battery.
Fig. 5 is the structural representation on novel solar cell single nano-wire of the present invention.
Fig. 6 is the SEM top view of prepared silicon nanowire array.
Fig. 7 has deposited nc-Si:H/SiN in nanowire surface
xsEM top view after superlattice quantum well, n layer, n+ ohmic contact layer and AZO layer.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.
As shown in Figure 5, on the silicon nanowire array of preparing by electroless plated metal auxiliary etch method, designed Al/p
+/ p/nc-Si:H/SiN
xsuperlattice quantum well/n/n
+the novel solar battery of/AZO structure, silicon nanowires quantum well solar cell is followed successively by Ti/Pd/Ag grid electrode, transparent Al-Doped ZnO (AZO) membrane of conducting layer, n+ ohmic contact layer, n layer, nc-Si:H/SiN along sunlight incident direction
xsuperlattice quantum well, p-type silicon nanowire array, p
+ohmic contact layer and and Al back electrode.Every thickness in monolayer of Nc-Si is controlled at 9 ± 0.5 nm, and the cycle is 45 ± 5 nm; SiN
xevery thickness in monolayer be controlled at 9 ± 0.5 nm, the cycle is 45 ± 5 nm.
As shown in Figure 2, silicon nanowire array reflectivity and polished silicon slice reflectivity comparison diagram, adopt the solar cell of technical solution of the present invention, adopts silicon nanowires can strengthen light trapping effect as supporting construction.Increase p
+, n
+be in order to reduce the contact resistance of semi-conducting material and metal electrode, improve short circuit current; Nc-Si:H/SiN
xmiddle nc-Si:H optical band gap is adjustable, forms thus nc-Si:H from the optical band gap successively decreasing successively outside to inside, can effectively expand spectral absorption scope, increases effective opto-electronic conversion area.
The preparation method of silicon nanowires quantum well solar cell:
1, the cleaning of silicon chip: clean (room temperature 10min) with acetone, alcohol sonic oscillation respectively; With the HF acid solution of 5% wt, soak 3min, then use NH
3h
2o:H
2o
2: H
2o=1:1:5 (V/V/V) is incubated 30 min under 80 ℃ of conditions; With deionized water lavage specimens product surface.
2, the preparation of silicon nanowire array: as shown in Figure 1, sample is put into HF/AgNO
3in mixed aqueous solution, HF 5 mol/L wherein, AgNO
30.02mol/L, etching 15min under 45 ℃ of conditions.Sample is put into HNO
3: H
2in the mixed solution of O=1:1 (V:V), 50 ℃ of insulation 30min, to remove silver and the silver fluoride of silicon chip surface, then rinse well with deionized water repeatedly.Sample being put into the KOH aqueous solution etching 45s that amount of substance concentration is 0.5 mol/L, then with deionized water, repeatedly rinse well, and at room temperature with nitrogen, dry up, is the SEM top view of prepared silicon nanowire array as shown in Figure 6.
3, preparation nc-Si/SiN
xsuperlattice quantum well.Utilize successively PCVD technology on silicon nanowire array, alternately to prepare nc-Si/SiN
xsuperlattice quantum well; Utilize PCVD technology at nc-Si/SiN
xon superlattice quantum well, prepare n
+ohmic contact layer, n layer; Utilize PCVD technology to have the silicon chip back side of silicon nanowire array to prepare p+ ohmic contact layer long.Adopt successively alternating deposit, by fixing direct current (DC) bias 200v, the grain size of controlling nc-Si:H remains on 2-3 nm.As shown in Figure 4, and by regulating radio-frequency power 50 W-250 W, control nc-Si:H crystalline state composition, prepare optical band gap quantum-well materials from small to large successively from the inside to the outside.Nc-Si and SiN
xthickness by controlling the film growth time, control, every thickness in monolayer is controlled at 9 ± 0.5 nm, the cycle is 45 ± 5 nm.
The hydrogen thinner ratio of silane used is 5%, and hydrogen and nitrogen are 99.9999% high-purity gas.Hydrogen thinner ratio [the SiH of silane used
4]/[SiH+H
2] be 5%; Utilize PECVD method to prepare p
+type silicon thin film, boron doping rate β
1=B/Si=10%; Utilize PECVD method to prepare N-shaped silicon thin film, phosphorus doping rate β
2=B/Si=5%; Utilize PECVD method to prepare n+ type silicon thin film, phosphorus doping rate β
3=B/Si=10%.
4, transparent Al-Doped ZnO (AZO) membrane of conducting layer.Utilize technique for atomic layer deposition to be deposited on deposit transparent Al-Doped ZnO (AZO) membrane of conducting layer on n+ layer, in Al-Doped ZnO (AZO), aluminium content is 0.86%, and depositing temperature is 200 ℃, and deposit thickness is 30-70nm.As shown in Figure 7, be to have deposited nc-Si:H/SiN in nanowire surface
xsuperlattice quantum well, n layer, n
+sEM top view after ohmic contact layer and AZO layer.
5, upper/lower electrode utilizes magnetron sputtering technique growth.
6, boundary defect is processed
After every layer of silicon thin film of PECVD deposition, film is carried out to 5min hydrogen Passivation Treatment, compound to reduce surperficial charge carrier.
7, battery etching and encapsulation
Prepared Performances of Novel Nano-Porous rice noodles quantum well solar battery surface average reflectance can reach 2.2% at 300 nm – 1100 nm wave bands, and battery efficiency can break through traditional silica-based solar cell limiting efficiency (27%), can be similar to the solar cell of full spectrum.
As shown in Figure 3, this novel solar cell has the advantage of " high falling into light, high efficiency, low cost and long-life ".On silicon nanowire array surface, form gradual change type quantum-well materials, greatly improved solar cell and fallen into light effect, widened the optical absorption spectra of solar cell simultaneously, formed a kind of nc-Si:H/SiN of approximate full spectrum
xsuperlattice quantum well solar cell.And had obvious quantum effect, and can produce multiple excitating performance, a photon can produce a plurality of electron-hole pairs.
Claims (10)
1. a silicon nanowires quantum well solar cell, is followed successively by Ti/Pd/Ag grid electrode, transparent Al-Doped ZnO (AZO) membrane of conducting layer, n along sunlight incident direction
+ohmic contact layer, n layer, nc-Si:H/SiN
xsuperlattice quantum well, p
+ohmic contact layer and and Al back electrode, it is characterized in that, described solar cell adopts p-type silicon nanowire array to support nc-Si:H/SiN
xsuperlattice quantum well.
2. a kind of silicon nanowires quantum well solar cell according to claim 1, is characterized in that, every thickness in monolayer of nc-Si is controlled at 9 ± 0.5 nm, and the cycle is 45 ± 5 nm.
3. a kind of silicon nanowires quantum well solar cell according to claim 1, is characterized in that SiN
xevery thickness in monolayer be controlled at 9 ± 0.5 nm, the cycle is 45 ± 5 nm.
4. a preparation method for silicon nanowires quantum well solar cell, is characterized in that, adopts electroless plated metal auxiliary etch technology to prepare silicon nanowire array; Utilize successively PCVD technology on silicon nanowire array, alternately to prepare nc-Si/SiN
xsuperlattice quantum well; Utilize PCVD technology at nc-Si/SiN
xon superlattice quantum well, prepare n
+ohmic contact layer, n layer; Adopt technique for atomic layer deposition to prepare transparent Al-Doped ZnO (AZO) membrane of conducting layer; Utilize technique for atomic layer deposition to be deposited on n
+deposit transparent Al-Doped ZnO (AZO) membrane of conducting layer on layer; Utilize mask method to prepare Ti/Pd/Ag grid electrode, be positioned on transparent AZO conductive membrane layer; Utilize PCVD technology to have the silicon chip back side of silicon nanowire array to prepare p long
+ohmic contact layer; Utilize sputtering technology at the p at the back side of silicon chip
+on ohmic contact layer, prepare Al back electrode; Carry out solar panel etching and encapsulation subsequent technique.
5. the preparation method of a kind of silicon nanowires quantum well solar cell according to claim 4, is characterized in that, silicon nanowire array adopts electroless deposition of silver auxiliary etch method, and etching solution is for containing AgNO
3hF aqueous acid, wherein the amount of substance concentration of HF acid is 3-5 mol/L, AgNO
3amount of substance concentration be 0.01-0.05 mol/L, etching 10-60min under 20-50 ℃ of condition; After rinsing well with deionized water, by amount of substance concentration, be the KOH aqueous solution etching 10-60s of 0.1-1 mol/L again, finally with deionized water, rinse well, and dry up with nitrogen.
6. the preparation method of a kind of silicon nanowires quantum well solar cell according to claim 5, is characterized in that, diameter and the cycle of nano-array prepared by employing electroless deposition of silver auxiliary etch method are respectively 50-200 nm and 350-650 nm.
7. the preparation method of a kind of silicon nanowires quantum well solar cell according to claim 4, is characterized in that nc-Si/SiN
xsuperlattice quantum well, n
+ohmic contact layer, p
+ohmic contact layer adopts successively alternating deposit; Sedimentary condition is base vacuum 1.6 * 10
-4pa, depositing temperature, at 300 ℃, adopts the fixedly grain size of direct current (DC) bias 200V control nc-Si:H to remain on 2-3 nm; Regulate radio-frequency power 50 W-250 W to control nc-Si:H crystalline state compositions, prepare optical band gap quantum-well materials from small to large successively from the inside to the outside; Nc-Si and SiN
xthickness by controlling the film growth time, control, every thickness in monolayer is controlled at 9 ± 0.5 nm, the cycle is 45 ± 5 nm.
8. according to the preparation method of a kind of silicon nanowires quantum well solar cell described in claim 4-to 7 any one, it is characterized in that the hydrogen thinner ratio [SiH of silane used
4]/[SiH+H
2] be 5%; Utilize PECVD method to prepare p
+type silicon thin film, boron doping rate β
1=B/Si=10%; Utilize PECVD method to prepare N-shaped silicon thin film, phosphorus doping rate β
2=B/Si=5%; Utilize PECVD method to prepare n
+type silicon thin film, phosphorus doping rate β
3=B/Si=10%.
9. the preparation method of a kind of silicon nanowires quantum well solar cell according to claim 4, is characterized in that, utilizes technique for atomic layer deposition to be deposited on n
+deposit transparent Al-Doped ZnO (AZO) membrane of conducting layer on layer, in Al-Doped ZnO (AZO), aluminium content is 0.86%, and depositing temperature is 200 ℃, and deposit thickness is 30-70nm.
10. the preparation method of a kind of silicon nanowires quantum well solar cell according to claim 4, is characterized in that, utilizes sputtering technology at the p at the back side of silicon chip
+on ohmic contact layer, prepare Al back electrode, before sputter, base vacuum is 1.6 * 10
-4pa, importing gas flow is 80-100ml/min, employing Ar is protective gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310012321.9A CN103594535A (en) | 2013-01-14 | 2013-01-14 | Silicon nano wire quantum well solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310012321.9A CN103594535A (en) | 2013-01-14 | 2013-01-14 | Silicon nano wire quantum well solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103594535A true CN103594535A (en) | 2014-02-19 |
Family
ID=50084602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310012321.9A Pending CN103594535A (en) | 2013-01-14 | 2013-01-14 | Silicon nano wire quantum well solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103594535A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104099579A (en) * | 2014-07-23 | 2014-10-15 | 国家纳米科学中心 | Ultra-thin silicon nitride membrane material and preparation method thereof |
| CN107099294A (en) * | 2017-04-11 | 2017-08-29 | 枣庄学院 | A kind of corrosive liquid and its application process for being used to prepare silicon nanowire structure |
| CN107393997A (en) * | 2017-06-27 | 2017-11-24 | 上海集成电路研发中心有限公司 | A kind of quantum trap infrared detector for improving absorptivity and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101262024A (en) * | 2008-03-26 | 2008-09-10 | 北京师范大学 | Silicon nano line/non crystal heterogeneous agglomeration solar battery |
| US20090256134A1 (en) * | 2008-04-14 | 2009-10-15 | Buchine Brent A | Process for Fabricating Nanowire Arrays |
| CN102157594A (en) * | 2011-03-18 | 2011-08-17 | 江苏大学 | Nc-Si:H/SiNx superlattice quantum well solar battery |
| CN102447011A (en) * | 2011-12-15 | 2012-05-09 | 华中科技大学 | Method for manufacturing solar battery photoanode and product thereof |
-
2013
- 2013-01-14 CN CN201310012321.9A patent/CN103594535A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101262024A (en) * | 2008-03-26 | 2008-09-10 | 北京师范大学 | Silicon nano line/non crystal heterogeneous agglomeration solar battery |
| US20090256134A1 (en) * | 2008-04-14 | 2009-10-15 | Buchine Brent A | Process for Fabricating Nanowire Arrays |
| CN102157594A (en) * | 2011-03-18 | 2011-08-17 | 江苏大学 | Nc-Si:H/SiNx superlattice quantum well solar battery |
| CN102447011A (en) * | 2011-12-15 | 2012-05-09 | 华中科技大学 | Method for manufacturing solar battery photoanode and product thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104099579A (en) * | 2014-07-23 | 2014-10-15 | 国家纳米科学中心 | Ultra-thin silicon nitride membrane material and preparation method thereof |
| CN107099294A (en) * | 2017-04-11 | 2017-08-29 | 枣庄学院 | A kind of corrosive liquid and its application process for being used to prepare silicon nanowire structure |
| CN107393997A (en) * | 2017-06-27 | 2017-11-24 | 上海集成电路研发中心有限公司 | A kind of quantum trap infrared detector for improving absorptivity and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109004053A (en) | The crystalline silicon of double-side photic/film silicon heterojunction solar battery and production method | |
| Schropp et al. | Amorphous silicon, microcrystalline silicon, and thin-film polycrystalline silicon solar cells | |
| CN103000741A (en) | Black heterogeneous crystalline cell and manufacture method thereof | |
| CN102157577A (en) | Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof | |
| CN202134564U (en) | Novel N-type silicon heterojunction battery with IBC structure | |
| CN207282509U (en) | The crystalline silicon of double-side photic/film silicon heterojunction solar battery | |
| US20110240121A1 (en) | Nanocrystalline Superlattice Solar Cell | |
| CN102201481A (en) | Novel N-type silicon hetero-junction battery with IBC (interdigitated back-contacted) structure and fabrication method thereof | |
| CN107342331B (en) | A kind of production technology of T-type top electrode back reflection thin film solar cell | |
| CN103219413A (en) | Grapheme radial heterojunction solar cell and preparation method thereof | |
| CN103594535A (en) | Silicon nano wire quantum well solar cell and preparation method thereof | |
| CN101771097A (en) | Silicon substrate heterojunction solar cell with band gap being controllable | |
| KR101658534B1 (en) | Solar cell and method for fabricaitng the same | |
| CN201699034U (en) | Silicon-based heterojunction solar battery | |
| CN106449815A (en) | Heterojunction solar cell device production method based on amorphous silicon thin films | |
| CN110416342A (en) | A kind of HJT battery and preparation method thereof based on metal nanoparticle | |
| CN102157594B (en) | Superlattice quantum well solar battery and preparation method thereof | |
| CN102544184B (en) | Personal identification number (PIN) solar battery with transverse structure and preparation method thereof | |
| Guha et al. | Science and technology of amorphous silicon alloy photovoltaics | |
| Gudovskikh et al. | Multijunction a-Si: H/c-Si solar cells with vertically-aligned architecture based on silicon nanowires | |
| CN114582983A (en) | Heterojunction solar cell and preparation method thereof | |
| CN204668332U (en) | There is the cadmium telluride diaphragm solar battery of gradient-structure | |
| KR20100096747A (en) | Solar cell and method for manufacturing thereof | |
| CN104465814A (en) | Super-small suede solar cell combined with zinc oxide nanostructure and preparation method thereof | |
| CN211455704U (en) | Silicon-based array laminated solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140219 |