CN107393997A - A kind of quantum trap infrared detector for improving absorptivity and preparation method thereof - Google Patents
A kind of quantum trap infrared detector for improving absorptivity and preparation method thereof Download PDFInfo
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- 238000009826 distribution Methods 0.000 claims description 11
- 229910020751 SixGe1-x Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
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- 238000005468 ion implantation Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 8
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- 230000015572 biosynthetic process Effects 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
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- 108090000723 Insulin-Like Growth Factor I Proteins 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 102000013275 Somatomedins Human genes 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
The invention discloses a kind of quantum trap infrared detector and its manufacture method for improving absorptivity, the detector includes substrate, SQW unit, Top electrode, Top electrode ohmic contact layer, dielectric layer, bottom electrode and bottom electrode ohmic contact layer, the substrate surface contains vertical protrusion, the bottom electrode is located at the top of bottom electrode ohmic contact layer, and bottom electrode periphery is dielectric layer, the SQW unit is deposited on the region outside the substrate surface bottom electrode and dielectric layer using epitaxial growth method, SQW unit on substrate surface protrusion is polyhedron, the Top electrode is connected by Top electrode ohmic contact layer with the orlop of SQW unit, wherein, ohmic contact layer is formed by ion implantation technology.A kind of quantum trap infrared detector for improving absorptivity provided by the invention has multiple absorbing surfaces, is effectively improved the absorption efficiency of quantum trap infrared detector.
Description
Technical field
The present invention relates to infrared detector field, and in particular to it is a kind of improve absorptivity quantum trap infrared detector and
Its preparation method.
Background technology
After traditional interband light absorbs refer to Electron absorption photon, conduction band is transitted to from valence band, so as to produce a light induced electron
Hole pair, these photo-generated carriers are collected to form photoelectric current in the presence of applying bias, and this is that tradition is based on inter-band absorption
The general principle of semiconductor photo detector.This absorb requires that the energy of photon is more than the energy gap of material, and for red
For outer light, infrared light wavelength length, corresponding energy is small, it is necessary to which this light could occur for the energy gap that material has very little
Absorb, therefore, in the manufacturing process of the infrared detector based on traditional inter-band absorption, the selection of material receives very big limit
System, can only typically select HgCdTe materials, but middle Hg-Te keys are more fragile, cause the making of infrared detector to be not easy.
Quantum trap infrared detector forms specific sub- energy by quantum well structure and the design of doping in SQW
Level, using between quantum well conduction band (or valence band) interior energy subband or energy subband is to electronics (or hole) transition between head expander.So
In the presence of infrared light, it can occur in SQW between sub- energy level or sub- energy level is to the transition between continuous state, these
The carrier being stimulated is collected to form photoelectric current under bias.Therefore, quantum trap infrared detector have stability it is good,
Fast response time, radioresistance and easy the advantages that making large area focal plane arrays (FPA).
But during quantum trap infrared detector use, incident infrared light is partly into inside SQW, one
Part is reflected before SQW is entered, and the infrared light utilization efficiency that this results in incidence is low, causes quantum well infrared
Deviation occurs for the result of detection of device, in order to improve the accuracy of quantum trap infrared detector, just it has to be ensured that as much as possible
Incident light, which enters in SQW, to be absorbed, it is therefore prevented that the loss of incident light, which has become quantum well detector, is badly in need of what is solved
Problem.
The content of the invention
The technical problems to be solved by the invention be to provide it is a kind of improve absorptivity quantum trap infrared detector and its
Vertical protrusion is contained on manufacture method, the quantum trap infrared detector surface, convex during using epitaxy grown quantum trap unit
The SQW on thing is played because the speed of growth is different, multiple surfaces can be formed so that quantum trap infrared detector has multiple suctions
Receipts face, it is effectively improved the absorption efficiency of quantum trap infrared detector.
To achieve these goals, the present invention adopts the following technical scheme that：A kind of SQW of raising absorptivity is infrared
Detector, wherein, including substrate, SQW unit, Top electrode, Top electrode ohmic contact layer, dielectric layer, bottom electrode and bottom electrode
Ohmic contact layer, the substrate surface contain vertical protrusion, and the substrate surface containing vertical protrusion passes through ion implanting
Bottom electrode ohmic contact layer is formed, the bottom electrode is located at the top of bottom electrode ohmic contact layer, and bottom electrode periphery is medium
Layer, the SQW unit are deposited on the region outside the substrate surface bottom electrode and dielectric layer, position using epitaxial growth method
It is polyhedron in the SQW unit on substrate surface protrusion, the Top electrode ohmic contact layer is located at the SQW unit
The superiors in, and the Top electrode ohmic contact layer above be Top electrode, the bottom electrode passes through bottom electrode ohmic contact layer
Connected with the orlop of SQW unit.
Further, the substrate surface protrusion is in net distribution in substrate surface, and between having between each protrusion
Gap.
Further, the substrate surface protrusion is distributed in substrate surface in bar shaped, and between having between every protrusion
Gap.
Further, the substrate surface protrusion is the entirety that multiple strip bulges connect into.
Further, the SQW unit is GaAs layers and AlxGa1-xAs layers are alternatively formed, wherein, AlxGa1-xAs layers
Thickness be less than the thickness of GaAs layers, and the superiors of the SQW unit and orlop are GaAs layers.
Further, the SQW unit is InGaAs layers and AlxGa1-xAs layers are alternatively formed, wherein, AlxGa1-xAs
The thickness of layer is less than the thickness of InGaAs layers, and the superiors of the SQW unit and orlop are InGaAs layers.
Further, the SQW unit is Si layers and SixGe1-xLayer is alternatively formed, wherein, SixGe1-xThe thickness of layer
Less than the thickness of Si layers, and the superiors of the SQW unit and orlop are Si layers.
Further, the substrate is silicon substrate.
Further, the Top electrode and bottom electrode are Pt metals.
A kind of preparation method for the quantum trap infrared detector for improving absorptivity, step are as follows：
S01：Vertical protrusion is graphically formed in substrate top surface；
S02：Ion implanting is carried out to above-mentioned substrate surface, forms bottom electrode ohmic contact layer, is given birth in doping surfaces region
Long dielectric layer is simultaneously graphical, and bottom electrode is filled in above-mentioned patterned area；
S03：Unnecessary dielectric layer is removed, only retains the dielectric layer positioned at bottom electrode periphery；
S04：Place beyond substrate top surface bottom electrode and its periphery dielectric layer, quantum is formed using epitaxial growth method
Trap unit；
S05：In the superiors' marginal growth Top electrode of SQW unit, the SQW unit being pointed to immediately below Top electrode
The superiors regions carry out ion implanting and form Top electrode ohmic contact layer.
Beneficial effects of the present invention are：Multiple protrusions are graphically formed on a silicon substrate, on the surface containing protrusion
During the upper formation SQW unit using epitaxial growth method, because the epitaxial growth speed of different crystal faces is different, generate
Polyhedral SQW unit；Polyhedral SQW unit has multiple light absorbs faces, can effectively absorb incident light, and
And can also be absorbed after the incident light being incident on one of absorbing surface is by reflection by other absorbing surface, greatly improve
Can quantum trap infrared detector absorption efficiency.
Brief description of the drawings
Fig. 1 is the substrate profile that protrusion is bar shaped distribution on substrate.
Fig. 2 is the top view that protrusion is in overall snakelike distribution on substrate.
Fig. 3 is the top view that protrusion is in net distribution on substrate.
Fig. 4 is the diagrammatic cross-section that Top electrode and bottom electrode are located on substrate surface protrusion.
Fig. 5 is the diagrammatic cross-section that Top electrode and bottom electrode are located in the horizontal substrate below substrate surface protrusion.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in further detail.
It is provided by the invention it is a kind of improve absorptivity quantum trap infrared detector, including substrate, SQW unit, on
Electrode, Top electrode ohmic contact layer, dielectric layer, bottom electrode and bottom electrode ohmic contact layer, substrate surface contain vertical projection
Thing, the substrate surface containing vertical protrusion form bottom electrode ohmic contact layer by ion implanting, and bottom electrode is located at bottom electrode
The top of ohmic contact layer, and bottom electrode periphery is dielectric layer, SQW unit is deposited on the substrate using epitaxial growth method
Region outside subsurface electrode and dielectric layer, the SQW unit on substrate surface protrusion are polyhedron, Top electrode
Ohmic contact layer is located in the superiors of SQW unit, and is Top electrode above Top electrode ohmic contact layer, and bottom electrode passes through
Bottom electrode ohmic contact layer connects with the orlop of SQW unit.
Wherein, substrate uses silicon substrate, because during epitaxial growth, the atomic density on silicon substrate difference crystal face is not
Together, cause its epitaxial growth speed different, corresponding crystal face is not on the substrate containing projection, on protrusion and silicon lining bottom plane
Together, therefore polyhedral SQW unit can be formed.
Wherein, the protrusion of substrate surface, which is adopted, graphically forms, during protrusion is formed, protrusion
It can also can be distributed in substrate surface in having gap between net distribution and each protrusion in substrate surface in bar shaped and every
There is gap between bar protrusion, or substrate surface protrusion is the entirety that multiple strip bulges connect into, formation has
The protrusion of regular shape or irregular shape, such as form in substrate surface the protrusion of a snakelike entirety.It is raised
Thing can be the square or polyhedron or irregular polyhedron of rule.In a word, as long as containing vertical projection
Thing, the difference of crystal face is just had during epitaxial growth, so as to be formed with polyhedral SQW unit.
As shown in figure 1, for the substrate profile that protrusion on substrate is bar shaped distribution, pass through graphical shape in substrate surface
Into a plurality of protrusion, and there is certain interval between strip bulge thing.As shown in Fig. 2 it is in overall for protrusion on substrate
Snakelike distribution top view, whole projection be an entirety, on the surface of a substrate according to certain regular or route realization
It is raised.As shown in figure 3, the top view for being in net distribution for protrusion on substrate, forms multiple protrusions on the surface of a substrate, and
And there is certain gap between each protrusion, so that all protrusions are in net distribution.The protrusion of substrate surface
Different with the crystal face of the substrate surface below protrusion, the speed of grown quantum trap unit is also different, therefore, in increment
During sub- trap unit, can be formed on protrusion has polyhedral SQW unit, and SQW unit has multiple tables
Face means that it has multiple absorbing surfaces, and during incident light beam strikes, incident light can be absorbed by multiple absorbing surfaces, together
When, can also be as the second incident light of other absorbing surfaces by the light of absorbing surface reflection.In traditional quantum trap infrared detector
In, the surface of SQW unit is horizontal, and therefore, the part that incident light is reflected will be wasted, and causes incident light sharp
It is low with rate, and in the present invention, the surface of SQW unit has multiple absorbing surfaces, substantially increases the absorptivity of incident light.
Wherein, during using epitaxy grown quantum trap, SQW unit can be GaAs layers and AlxGa1-xAs layers are handed over
For formation, wherein, AlxGa1-xThe thickness of As layers is less than the thickness of GaAs layers, and the superiors of SQW unit and orlop are equal
For GaAs layers, or InGaAs layers and AlxGa1-xAs layers are alternatively formed, wherein, AlxGa1-xThe thickness of As layers is less than
The thickness of InGaAs layers, and the superiors of SQW unit and orlop are InGaAs layers, can also be Si layers and SixGe1-x
Layer is alternatively formed, wherein, SixGe1-xThe thickness of layer is less than the thickness of Si layers, and the superiors of SQW unit and orlop are equal
For Si layers.
The electric signal for acting as drawing the SQW unit the superiors of Top electrode, when SQW unit deposition is completed,
Top electrode is made above the superiors of SQW unit, and Top electrode and SQW unit the superiors contact area pass through ion
Injection technology injects boron ion or phosphonium ion, forms high-concentration dopant area, to form upper electric level ohmic contact layer.Wherein, on
Electrode can be located on the protrusion of substrate surface, can also be located in the horizontal substrate below substrate surface protrusion.
Bottom electrode act as the extraction undermost electric signal of SQW unit, passes through bottom electrode ohmic contact layer and quantum
The orlop connection of trap unit.Before epitaxial growth SQW unit, all surface of substrate is formed by ion implanting
Bottom electrode ohmic contact layer, i.e. bottom electrode ohmic contact layer cover all surfaces of substrate, including protrusion and positioned at projection
Substrate level below thing, one layer of dielectric layer, and graphical filling in the dielectric layer are formed on bottom electrode ohmic contact layer
Bottom electrode, now, bottom electrode are fabricated on bottom electrode ohmic contact layer, and surrounding is dielectric layer, in extension life afterwards
In long step, the region containing bottom electrode and dielectric layer no longer carries out epitaxial growth.Although bottom electrode is located at the top of substrate,
It is that substrate surface conducts pattern by the formation of ion implanting form, so bottom electrode can be with substrate surface other parts
The orlop of SQW unit is realized and conducted.Wherein, bottom electrode can be located on the protrusion of substrate surface, can also be located at
In horizontal substrate below substrate surface protrusion.
As shown in figure 4, it is located at the diagrammatic cross-section on substrate surface protrusion for Top electrode and bottom electrode.
As shown in figure 5, the section being located at for Top electrode and bottom electrode in the horizontal substrate below substrate surface protrusion shows
It is intended to.
Present invention also offers a kind of preparation method for the quantum trap infrared detector for improving absorptivity, step are as follows：
S01：Vertical protrusion is graphically formed in substrate top surface, wherein, substrate surface protrusion is in substrate surface
In net distribution, either bar shaped is distributed or is an entirety；
S02：To above-mentioned substrate all surface using ion implantation technology injection phosphonium ion or boron ion, bottom electrode is formed
Ohmic contact layer, the somatomedin layer and graphical in doping surfaces region, bottom electrode is filled in above-mentioned patterned area, wherein,
Dielectric layer is the insulating barrier of silica etc, and bottom electrode can be Pt metals, and can be located on the protrusion of substrate surface,
It can be located in the horizontal substrate below substrate surface protrusion.
S03：Unnecessary dielectric layer is removed, only retains the dielectric layer positioned at bottom electrode periphery, Jie positioned at bottom electrode periphery
Matter layer is to protect bottom electrode, and bottom electrode and surrounding is kept apart；
S04：Place beyond substrate top surface bottom electrode and its periphery dielectric layer, quantum is formed using epitaxial growth method
Trap unit, SQW unit can be GaAs layers and AlxGa1-xAs layers are alternatively formed, wherein, AlxGa1-xThe thickness of As layers is less than
The thickness of GaAs layers, and the superiors of SQW unit and orlop are GaAs layers, or InGaAs layers and AlxGa1- xAs layers are alternatively formed, wherein, AlxGa1-xThe thickness of As layers be less than InGaAs layers thickness, and the superiors of SQW unit and
Orlop is InGaAs layers, can also be Si layers and SixGe1-xLayer is alternatively formed, wherein, SixGe1-xThe thickness of layer is less than Si
The thickness of layer, and the superiors of SQW unit and orlop are Si layers.
S05：In the superiors' marginal growth Top electrode of SQW unit, the SQW unit being pointed to immediately below Top electrode
The superiors regions carry out ion implanting and form Top electrode ohmic contact layer, Top electrode is Pt metals, and can be located at substrate table
On the protrusion in face, it can also be located in the horizontal substrate below substrate surface protrusion..
The preferred embodiments of the present invention are the foregoing is only, the embodiment is not intended to limit the patent protection of the present invention
Scope, therefore the equivalent structure change that every specification and accompanying drawing content with the present invention is made, similarly should be included in this
In the protection domain of invention appended claims.
Claims (10)
1. a kind of quantum trap infrared detector for improving absorptivity, it is characterised in that including substrate, SQW unit, upper electricity
Pole, Top electrode ohmic contact layer, dielectric layer, bottom electrode and bottom electrode ohmic contact layer, the substrate surface contain vertical convex
Thing is played, the substrate surface containing vertical protrusion forms bottom electrode ohmic contact layer by ion implanting, and the bottom electrode is located at
The top of bottom electrode ohmic contact layer, and bottom electrode periphery is dielectric layer, the SQW unit is deposited using epitaxial growth method
Region outside the substrate surface bottom electrode and dielectric layer, the SQW unit on substrate surface protrusion are multiaspect
Body, the Top electrode ohmic contact layer are located in the superiors of the SQW unit, and on the Top electrode ohmic contact layer
Side is Top electrode, and the bottom electrode is connected by bottom electrode ohmic contact layer with the orlop of SQW unit.
A kind of 2. quantum trap infrared detector for improving absorptivity according to claim 1, it is characterised in that the lining
Basal surface protrusion is in net distribution in substrate surface, and has gap between each protrusion.
A kind of 3. quantum trap infrared detector for improving absorptivity according to claim 1, it is characterised in that the lining
Basal surface protrusion is distributed in substrate surface in bar shaped, and has gap between every protrusion.
A kind of 4. quantum trap infrared detector for improving absorptivity according to claim 1, it is characterised in that the lining
Basal surface protrusion is the entirety that multiple strip bulges connect into.
A kind of 5. quantum trap infrared detector for improving absorptivity according to claim 1, it is characterised in that the amount
Sub- trap unit is GaAs layers and AlxGa1-xAs layers are alternatively formed, wherein, AlxGa1-xThe thickness of As layers is less than the thickness of GaAs layers,
And the superiors of the SQW unit and orlop are GaAs layers.
A kind of 6. quantum trap infrared detector for improving absorptivity according to claim 1, it is characterised in that the amount
Sub- trap unit is InGaAs layers and AlxGa1-xAs layers are alternatively formed, wherein, AlxGa1-xThe thickness of As layers is less than the thickness of InGaAs layers
Degree, and the superiors of the SQW unit and orlop are InGaAs layers.
A kind of 7. quantum trap infrared detector for improving absorptivity according to claim 1, it is characterised in that the amount
Sub- trap unit is Si layers and SixGe1-xLayer is alternatively formed, wherein, SixGe1-xThe thickness of layer is less than the thickness of Si layers, and the amount
The superiors of sub- trap unit and orlop are Si layers.
A kind of 8. quantum trap infrared detector for improving absorptivity according to claim 1, it is characterised in that the lining
Bottom is silicon substrate.
9. a kind of quantum trap infrared detector for improving absorptivity according to claim 1, it is characterised in that on described
Electrode and bottom electrode are Pt metals.
10. a kind of method of the quantum trap infrared detector of the raising absorptivity made described in claim 1, step are as follows：
S01：Vertical protrusion is graphically formed in substrate top surface；
S02：Ion implanting is carried out to above-mentioned substrate surface, forms bottom electrode ohmic contact layer, grows and is situated between in doping surfaces region
Matter layer is simultaneously graphical, and bottom electrode is filled in above-mentioned patterned area；
S03：Unnecessary dielectric layer is removed, only retains the dielectric layer positioned at bottom electrode periphery；
S04：Place beyond substrate top surface bottom electrode and its periphery dielectric layer, SQW list is formed using epitaxial growth method
Member；
S05：In the superiors' marginal growth Top electrode of SQW unit, SQW unit immediately below Top electrode is pointed to most
Top area carries out ion implanting and forms Top electrode ohmic contact layer.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494277A (en) * | 2018-12-04 | 2019-03-19 | 陕西理工大学 | A kind of Long Wave Infrared Probe and preparation method thereof |
| CN109686807A (en) * | 2018-12-24 | 2019-04-26 | 电子科技大学 | A kind of photodetector and preparation method thereof based on three-dimensional epitaxial film structure |
| CN113838952A (en) * | 2021-09-06 | 2021-12-24 | 厦门乾照半导体科技有限公司 | Epitaxial structure based on Nano-LED application, chip and preparation method |
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