CN104091849A - Multi-junction solar cell and manufacturing method thereof - Google Patents
Multi-junction solar cell and manufacturing method thereof Download PDFInfo
- Publication number
- CN104091849A CN104091849A CN201410368077.4A CN201410368077A CN104091849A CN 104091849 A CN104091849 A CN 104091849A CN 201410368077 A CN201410368077 A CN 201410368077A CN 104091849 A CN104091849 A CN 104091849A
- Authority
- CN
- China
- Prior art keywords
- battery
- sub
- solar cell
- holder
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a multi-junction solar cell. The multi-junction solar cell at least comprises a bottom sub-cell and a top sub-cell, wherein the top sub-cell is located on the bottom sub-cell. The top sub-cell is only formed on a part of the surface of the bottom sub-cell so that the light receiving area of the top sub-cell can be reduced. When light enters the multi-junction solar cell, a part of the light is directly absorbed by other sub-cells below the top sub-cell, so that a current of the top sub-cell is reduced.
Description
Technical field
The invention belongs to compound semiconductor area of solar cell, be specifically related to a kind of multijunction solar cell structure and preparation method thereof.
Background technology
Solar cell is that one is utilized photovoltaic effect, solar energy is changed into the semiconductor device of electric energy, is formed by a p-type and N-shaped semiconductor combinations.In the time that solar irradiation is mapped to device, the sunlight that energy is greater than semiconductor energy gap can be absorbed, and makes semiconductor device produce electron hole pair, forms electric current after connection.
Fig. 1 is solar radiation spectrogram, and the infrared light of the main distribution of wavelength from the ultraviolet light of 0.3 micron to several microns, is converted into photon energy, approximately from 0.4 eV to 4 eV.In order to absorb solar energy more, multijunction solar cell is suggested, it is stacked the semiconductor element with different energy gaps, so can utilize sunlight that the semiconductor material layer of multiple different energy gaps absorbs respectively different-energy to promote photoelectric conversion efficiency.Although can increase in this way the bandwidth of energy absorption, but because the semiconductor material layer of different energy gaps is superimposed together, the current density difference that top layer solar cell and bottom solar cell produce is separately excessive, this electric current mismatch, to cause whole element photoelectric conversion efficiency to lower, therefore how reducing electric current mismatch is an important subject under discussion.
Summary of the invention
The object of this invention is to provide a kind of multijunction solar cell structure that reduces electric current mismatch and then raising photoelectric conversion efficiency and preparation method thereof, it is by reducing the light-receiving area of holder battery, reduce the electric current of holder battery, and the sub-battery that remaining light is left for below absorbs, improve the electric current of lower face battery, finally reach the currents match of many knots battery, thereby realize the optimization of multijunction cell efficiency.
According to a first aspect of the invention, a kind of multijunction solar cell, at least comprise that a bottom battery and is positioned at the holder battery on battery of the described end, described holder battery is only formed on the part surface of described bottom battery to reduce the light-receiving area of holder battery, in the time that light is incident to this multijunction solar cell, part light is directly absorbed by its minor battery below holder battery, reduces the electric current of described holder battery.
In certain embodiments, the surface area of described holder battery accounts for 70% ~ 99% of bottom battery.
In certain embodiments, described holder battery has groove figure, exposes the surface of its lower prescription battery, in the time that light is incident to this groove figure, is directly absorbed by the sub-battery of beneath trenches.Preferably, the area of described groove figure accounts for 1% ~ 30% of the gross area.Preferably, the degree of depth of described groove figure is not more than the thickness of described holder battery.
In certain embodiments, described multijunction solar cell comprises three knot batteries, it is respectively the sub-battery of Ge first, the sub-battery of GaAs second from top to bottom, GaInP the 3rd sub-battery, wherein said the 3rd sub-battery is only formed on the part surface of the second sub-battery, described the second sub-battery exposed portions serve surface is directly absorbed by the second sub-battery in the time that light is incident to this exposed portions serve surface.Preferably, the area of described holder battery accounts for 95% ~ 99% of neutron battery.
In certain embodiments, described multijunction solar cell comprises four knot batteries, it is respectively the sub-battery of Ge first, the sub-battery of InGaAs second, InGaAsP or AlInGaAs the 3rd sub-battery, AlInGaP the 4th sub-battery from top to bottom, wherein said the 4th sub-battery is only formed on the part surface of the 3rd sub-battery, described the 3rd sub-battery exposed portions serve surface is directly absorbed by the 3rd sub-battery in the time that light is incident to this exposed portions serve surface.
According to a second aspect of the invention, a kind of preparation method of multijunction solar cell, comprise and deposit successively extension lamination, it comprises that a bottom battery and is positioned at the holder battery on battery of the described end, it is characterized in that: only on the part surface of described bottom battery, form holder battery, to reduce the light-receiving area of holder battery, in the time that light is incident to this multijunction solar cell, part light is directly absorbed by its minor battery below holder battery, reduces the electric current of described holder battery.
In certain embodiments, the preparation method of described multijunction solar cell, comprises step: a substrate is provided, forms successively each knot battery thereon, it at least comprises bottom battery and is positioned at the holder battery on described bottom battery; Become groove figure at described holder battery, expose the surface of its lower prescription battery, in the time that light is incident to this groove figure, directly absorbed by the sub-battery of beneath trenches.Preferably, the area of the groove figure of described formation accounts for 1% ~ 30% of the gross area.
Brief description of the drawings
Fig. 1 is solar radiation spectrogram.
Fig. 2 is the side sectional view of first embodiment of the invention three-joint solar cell.
Fig. 3 is the light absorption schematic diagram of three-joint solar cell shown in Fig. 2.
Fig. 4 is the groove figure of three-joint solar cell shown in Fig. 2.
Fig. 5 is the spectral response curve figure of the sub-battery of GaInP.
Fig. 6 is the spectral response curve figure of the sub-battery of GaAs.
Fig. 7 is the side sectional view of second embodiment of the invention four-junction solar cell.
Fig. 8 ~ 11 have shown the structure cutaway view in second embodiment of the invention four-junction solar cell manufacturing process.
Embodiment
More than the present invention, joint solar cell is by reducing the light-receiving area of holder battery, reduce the electric current of holder battery, and the sub-battery that remaining light is left for below absorbs, improve the electric current of lower face battery, finally reach the currents match of many knots battery, it is applicable any multijunction cell, as GaInP/GaAs binode battery, GaInP/GaAs/Ge Lattice Matching three junction batteries, GaInP/ InGaAs/InGaAs tri-junction batteries, AlGaInP/InGaAsP/InGaAs/Ge tetra-junction batteries, GaInP/InGaAs/InGaAs/InGaAs tetra-junction batteries, GaInP/InGaAs/InGaNAsSb/Ge tetra-junction batteries, AlGaInP/AlGaAs/GaAs/InGaNAs/Ge five junction batteries etc.Generally, under multijunction solar cell, the cut-off current of face battery is 5% ~ 20%, thus top battery light-receiving area can be defined as 70% ~ 97% of the gross area.Below in conjunction with specific embodiment, embodiments of the present invention are elaborated.
Fig. 2 has shown the side sectional view of first embodiment of the invention GaInP/GaAs/Ge three-joint solar cell 100.
Please refer to Fig. 2, three-joint solar cell 100, comprises p-type Ge substrate 110, the sub-battery 120 of Ge first, the sub-battery 130 of GaAs second, the sub-battery 140 of GaInP the 3rd.General, between first, second sub-battery, connect (not shown) by tunnel junction respectively between second, third sub-battery.Wherein the sub-battery 140 of GaInP the 3rd has groove figure 150, and it exposes the part surface 130a of the sub-battery 130 of its below GaAs second.Please refer to accompanying drawing 3, when solar cell is placed in sunlight environment, light L
abe incident to the surface of the 3rd sub-battery 140, absorbed light L by the 3rd sub-battery
bwhile being incident to this groove figure, directly absorbed by the sub-battery 130 of GaAs second of beneath trenches.
Please refer to accompanying drawing 4, groove figure 150 can be made up of a series of grooves parallel to each other, also can be made up of a series of grooves intersected with each other, can also be that row are regularly arranged circular or square groove composition.Preferably, also can, at the interior filling light transmission of groove figure 150 dielectric material, as silicon nitride, silica etc., when protection the second sub-battery, ensure the integrality of the 3rd sub-battery physical structure.
Please refer to accompanying drawing 5 and 6, wherein Fig. 5 has shown the spectral response curve of the sub-battery of GaInP, Fig. 6 has shown the spectral response curve of the sub-battery of GaAs, as can be seen from Figure, the sub-battery of GaInP to the spectral response of 300nm ~ 680nm band of light higher than the sub-battery of GaAs second, and the second sub-battery current limliting 5% in general GaInP/GaAs/Ge three-joint solar cell, therefore the area of channel patterns is less than 5% of the battery gross area, be generally area accounting and get 95% ~ 99%, preferably get 97%.
Fig. 7 has shown the side sectional view of second embodiment of the invention AlGaInP/InGaAsP/InGaAs/Ge four-junction solar cell 200.
Please refer to accompanying drawing 7, four-junction solar cell 200, comprise p-type Ge substrate 210, the sub-battery 220 of Ge first, p-type InGaAs stress graded bedding 230, the sub-battery 240 of InGaAs second, the sub-battery 250 of InGaAsP the 3rd and the sub-battery 260 of AlInGaP the 4th, wherein connect (not shown) by a n++-GaAs/p++-GaAs tunnel junction between each knot battery.Wherein the sub-battery 260 of AlGaInP the 4th has groove figure 270, and it exposes the part surface 250a of its below InGaAsP the 3rd sub-battery 250.Below in conjunction with preparation method, the present embodiment is elaborated.
First, deposit the extension lamination of each knot battery at MOCVD reative cell, it comprises growth the first sub-battery 220, the second sub-battery 240, the 3rd sub-battery 250 and the 4th sub-battery 260.Specific as follows:
1) at p-type Ge substrate 210 epitaxial growth N-shaped Ga
0.5in
0.5p Window layer, doping content 5E18/cm
3, form the sub-battery 220 of Ge first;
2) epitaxial growth p-type InGaAs stress graded bedding 230 on the sub-battery 220 of Ge first, keeps TMGa flow constant, makes In component be gradient to 0.17 from 0, variation pattern is notch cuttype gradual change, every 0.02 left and right of In component is a ladder, totally 9 layers, and each ladder growth 250nm;
3) the sub-battery 240 of InGaAs second that epitaxial growth band gap is 1.2eV on p-type InGaAs stress graded bedding 230, the p-type AlInGaAs back surface field layer of the 20nm that first grows, 3 μ m are thick in regrowth, and doping content is 1 × 10
17cm
-3p-type In
0.17ga
0.83as base, regrowth 200nm is thick, and doping content is 2 × 10
18cm
-3n-shaped In
0.17ga
0.83as emission layer, 50nm thick 1 × 10 finally grows
18cm
-3n-shaped InGaP Window layer;
4) the sub-battery 250 of InGaAsP the 3rd that epitaxial growth band gap is 1.55eV on the sub-battery 240 of InGaAs second, the p-type AlInGaAs back surface field layer of the 20nm that first grows, 3 μ m are thick in regrowth, and doping content is 1 × 10
17cm
-3p-type In
0.27ga
0.73as
0.49p
0.51base, regrowth 300nm is thick, and doping content is 2 × 10
18cm
-3n-shaped In
0.27ga
0.73as
0.49p
0.51emission layer, 50nm thick 1 × 10 finally grows
18cm
-3n-shaped AlInP Window layer;
5) the sub-battery 260 of AlInGaP the 4th that epitaxial growth band gap is 1.85eV on the sub-battery 250 of InGaAsP the 3rd, the p-type InAlGaAs back surface field layer of the 100nm that first grows, regrowth 600nm is thick, and doping content is 6 × 10
16cm
-3p-type AlInGaP base, regrowth 150nm is thick, doping content is 5 × 10
18cm
-3n-shaped AlInGaP emission layer, 50nm thick 5 × 10 finally grows
18cm
-3n-shaped AlInP Window layer, thereby on Ge substrate, complete AlGaInP/InGaAsP/ InGaAs/Ge lattice mismatch four-junction solar cell, its side sectional view is as shown in Figure 8.
Secondly, on the sub-battery 260 of AlInGaP the 4th, form ditch figure 270, expose the part surface 250a of its below InGaAsP the 3rd sub-battery 250.Specific as follows: to please refer to accompanying drawing 9, use photoetching process, make litho pattern 280 on the sub-battery of AlInGaP the 4th 260 surfaces; Then adopt chemical etching to remove the sub-battery 260 of AlGaInP the 4th that there is no photoresist protection, form groove 270, as shown in figure 10; Remove the photoresist 280 on four junction batteries, finally obtain plough groove type AlGaInP/InGaAsP/ InGaAs/Ge lattice mismatch four junction batteries, as shown in figure 11.
In the present embodiment, two kinds of samples are made respectively, external quantum efficiency to two samples is tested, two samples are AlGaInP/InGaAsP/ InGaAs/Ge four-junction solar cell, wherein the 4th of sample 1 the sub-battery 260 covers the 3rd sub-battery 250 completely, there is no channel patterns, and the 4th sub-battery 260 of sample 2 only covers the part surface of the 3rd sub-battery 250, be provided with channel patterns (area approximately 20%), the part surface of exposed portions serve the 3rd sub-battery 250.Test result is as following table:
Can find out from upper table, the InGaAsP of sample 1 the 3rd knot battery current limliting is serious, its main cause is lower causing of the sub-battery band gap of AlGaInP the 4th, and sample 2(is the four-junction solar cell of the present embodiment) in the situation that ensureing that other performance parameter of battery is constant, realize currents match between sub-battery, its conversion efficiency under 1000 times of optically focused test conditions reaches 44.1%.
Only as described above, it is only the present invention's preferred embodiment, when not limiting with this scope of the invention process, the simple equivalence of generally being done according to the present patent application the scope of the claims and patent specification content changes and modifies, and is all still covered by the present invention within the scope of the patent.
Claims (11)
1. multijunction solar cell, at least comprise that a bottom battery and is positioned at the holder battery on battery of the described end, described holder battery is only formed on the part surface of described bottom battery to reduce the light-receiving area of holder battery, in the time that light is incident to this multijunction solar cell, part light is directly absorbed by its minor battery below holder battery, reduces the electric current of described holder battery.
2. multijunction solar cell according to claim 1, is characterized in that: the surface area of described holder battery accounts for 70% ~ 99% of bottom battery.
3. multijunction solar cell according to claim 1, is characterized in that: described holder battery has groove figure, exposes the surface of its lower prescription battery, in the time that light is incident to this groove figure, is directly absorbed by the sub-battery of beneath trenches.
4. multijunction solar cell according to claim 3, is characterized in that: the area of described groove figure accounts for 1% ~ 30% of the gross area.
5. multijunction solar cell according to claim 3, is characterized in that: the degree of depth of described groove figure is not more than the thickness of described holder battery.
6. multijunction solar cell according to claim 1, it is characterized in that: comprise three knot batteries, it is respectively the sub-battery of Ge first, the sub-battery of GaAs second from top to bottom, GaInP the 3rd sub-battery, wherein said the 3rd sub-battery is only formed on the part surface of the second sub-battery, described the second sub-battery exposed portions serve surface is directly absorbed by the second sub-battery in the time that light is incident to this exposed portions serve surface.
7. multijunction solar cell according to claim 6, is characterized in that: the area of described holder battery accounts for 95% ~ 99% of neutron battery.
8. multijunction solar cell according to claim 1, it is characterized in that: comprise four knot batteries, it is respectively the sub-battery of Ge first, the sub-battery of InGaAs second, InGaAsP or AlInGaAs the 3rd sub-battery, AlInGaP the 4th sub-battery from top to bottom, wherein said the 4th sub-battery is only formed on the part surface of the 3rd sub-battery, described the 3rd sub-battery exposed portions serve surface is directly absorbed by the 3rd sub-battery in the time that light is incident to this exposed portions serve surface.
9. the preparation method of multijunction solar cell, comprise and deposit successively extension lamination, it comprises that a bottom battery and is positioned at the holder battery on battery of the described end, it is characterized in that: only on the part surface of described bottom battery, form holder battery, to reduce the light-receiving area of holder battery, in the time that light is incident to this multijunction solar cell, part light is directly absorbed by its minor battery below holder battery, reduces the electric current of described holder battery.
10. the preparation method of multijunction solar cell according to claim 9, comprises step:
One substrate is provided, forms successively each knot battery thereon, it at least comprises bottom battery and is positioned at the holder battery on described bottom battery;
Become groove figure at described holder battery, expose the surface of its lower prescription battery, in the time that light is incident to this groove figure, directly absorbed by the sub-battery of beneath trenches.
11. preparation methods of multijunction solar cell according to claim 10, is characterized in that: the area of the groove figure of described formation accounts for 1% ~ 30% of the gross area.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410368077.4A CN104091849B (en) | 2014-07-29 | 2014-07-29 | Multi-junction solar cell and manufacturing method thereof |
| PCT/CN2015/073461 WO2016015467A1 (en) | 2014-07-29 | 2015-03-02 | Multi-junction solar cell and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410368077.4A CN104091849B (en) | 2014-07-29 | 2014-07-29 | Multi-junction solar cell and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104091849A true CN104091849A (en) | 2014-10-08 |
| CN104091849B CN104091849B (en) | 2017-01-18 |
Family
ID=51639547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410368077.4A Active CN104091849B (en) | 2014-07-29 | 2014-07-29 | Multi-junction solar cell and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104091849B (en) |
| WO (1) | WO2016015467A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659140A (en) * | 2015-03-06 | 2015-05-27 | 天津三安光电有限公司 | Multijunction solar cell |
| WO2016015467A1 (en) * | 2014-07-29 | 2016-02-04 | 厦门市三安光电科技有限公司 | Multi-junction solar cell and preparation method therefor |
| CN106601856A (en) * | 2015-10-13 | 2017-04-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Triple-junction solar cell and manufacturing method thereof |
| WO2017084492A1 (en) * | 2015-11-20 | 2017-05-26 | 北京汉能创昱科技有限公司 | Dual-junction thin film solar cell assembly, and manufacturing method thereof |
| CN108063169A (en) * | 2016-11-07 | 2018-05-22 | 张忠诚 | Method and framework for improving generating capacity of solar cell on unit erection area |
| KR20200104692A (en) * | 2019-02-27 | 2020-09-04 | 한국과학기술연구원 | Multi-junction solar cell and manufacturing method of the same |
| CN112582494A (en) * | 2019-09-27 | 2021-03-30 | 阿聚尔斯佩西太阳能有限责任公司 | Monolithic multijunction solar cell with exactly four subcells |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11563133B1 (en) | 2015-08-17 | 2023-01-24 | SolAero Techologies Corp. | Method of fabricating multijunction solar cells for space applications |
| US10700230B1 (en) | 2016-10-14 | 2020-06-30 | Solaero Technologies Corp. | Multijunction metamorphic solar cell for space applications |
| GB2573810B (en) | 2018-05-18 | 2021-02-24 | Graphene Composites Ltd | Protective shield and shield wall |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62104080A (en) * | 1985-10-30 | 1987-05-14 | Sharp Corp | Solar battery cell |
| CN101499493A (en) * | 2009-02-23 | 2009-08-05 | 东南大学 | Three-junction solar cell |
| WO2012057604A1 (en) * | 2010-10-29 | 2012-05-03 | Mimos Berhad | Nanostructure-based photovoltaic cell |
| CN103426965A (en) * | 2013-08-16 | 2013-12-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Solar cell and manufacturing method thereof |
| KR101357059B1 (en) * | 2011-11-24 | 2014-02-05 | (재)한국나노기술원 | Multijunction Solar Cell Having Electric Current Matching Structure |
| US20140158189A1 (en) * | 2011-05-02 | 2014-06-12 | Mcmaster University | Areal current matching of tandem solar cells |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1177375C (en) * | 2003-01-14 | 2004-11-24 | 河北科技大学 | Solar energy conversion photocell with multi-junction and poles joined |
| US20100084924A1 (en) * | 2008-10-07 | 2010-04-08 | Sunlight Photonics Inc. | Apparatus and method for producing ac power |
| US8431815B2 (en) * | 2009-12-22 | 2013-04-30 | Los Alamos National Security, Llc | Photovoltaic device comprising compositionally graded intrinsic photoactive layer |
| CN104091849B (en) * | 2014-07-29 | 2017-01-18 | 天津三安光电有限公司 | Multi-junction solar cell and manufacturing method thereof |
-
2014
- 2014-07-29 CN CN201410368077.4A patent/CN104091849B/en active Active
-
2015
- 2015-03-02 WO PCT/CN2015/073461 patent/WO2016015467A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62104080A (en) * | 1985-10-30 | 1987-05-14 | Sharp Corp | Solar battery cell |
| CN101499493A (en) * | 2009-02-23 | 2009-08-05 | 东南大学 | Three-junction solar cell |
| WO2012057604A1 (en) * | 2010-10-29 | 2012-05-03 | Mimos Berhad | Nanostructure-based photovoltaic cell |
| US20140158189A1 (en) * | 2011-05-02 | 2014-06-12 | Mcmaster University | Areal current matching of tandem solar cells |
| KR101357059B1 (en) * | 2011-11-24 | 2014-02-05 | (재)한국나노기술원 | Multijunction Solar Cell Having Electric Current Matching Structure |
| CN103426965A (en) * | 2013-08-16 | 2013-12-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | Solar cell and manufacturing method thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016015467A1 (en) * | 2014-07-29 | 2016-02-04 | 厦门市三安光电科技有限公司 | Multi-junction solar cell and preparation method therefor |
| CN104659140A (en) * | 2015-03-06 | 2015-05-27 | 天津三安光电有限公司 | Multijunction solar cell |
| CN106601856A (en) * | 2015-10-13 | 2017-04-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Triple-junction solar cell and manufacturing method thereof |
| CN106601856B (en) * | 2015-10-13 | 2018-05-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-joint solar cell and preparation method thereof |
| WO2017084492A1 (en) * | 2015-11-20 | 2017-05-26 | 北京汉能创昱科技有限公司 | Dual-junction thin film solar cell assembly, and manufacturing method thereof |
| CN108063169A (en) * | 2016-11-07 | 2018-05-22 | 张忠诚 | Method and framework for improving generating capacity of solar cell on unit erection area |
| KR20200104692A (en) * | 2019-02-27 | 2020-09-04 | 한국과학기술연구원 | Multi-junction solar cell and manufacturing method of the same |
| KR102224624B1 (en) * | 2019-02-27 | 2021-03-08 | 한국과학기술연구원 | Multi-junction solar cell and manufacturing method of the same |
| US11233165B2 (en) | 2019-02-27 | 2022-01-25 | Korea Institute Of Science And Technology | Multi-junction solar cell and manufacturing method of the same |
| CN112582494A (en) * | 2019-09-27 | 2021-03-30 | 阿聚尔斯佩西太阳能有限责任公司 | Monolithic multijunction solar cell with exactly four subcells |
| CN112582494B (en) * | 2019-09-27 | 2023-09-12 | 阿聚尔斯佩西太阳能有限责任公司 | Monolithic multi-junction solar cell with exactly four subcells |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016015467A1 (en) | 2016-02-04 |
| CN104091849B (en) | 2017-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104091849B (en) | Multi-junction solar cell and manufacturing method thereof | |
| US10355159B2 (en) | Multi-junction solar cell with dilute nitride sub-cell having graded doping | |
| TWI600173B (en) | Multijunction solar cell with low band gap absorbing layer in the middle cell and method for fabricating the same | |
| TWI594449B (en) | Four junction inverted metamorphic multijunction solar cell with two metamorphic layers | |
| US20090272430A1 (en) | Refractive Index Matching in Inverted Metamorphic Multijunction Solar Cells | |
| US20170054048A1 (en) | Four junction solar cell for space applications | |
| US20040187912A1 (en) | Multijunction solar cell and current-matching method | |
| US20130263923A1 (en) | Reverse heterojunctions for solar cells | |
| JP2009182325A (en) | Hetero-junction subcell in inverted metamorphic multijunction solar cell | |
| US20130228216A1 (en) | Solar cell with gradation in doping in the window layer | |
| US20140090700A1 (en) | High-concentration multi-junction solar cell and method for fabricating same | |
| US9035367B2 (en) | Method for manufacturing inverted metamorphic multijunction solar cells | |
| JP4868820B2 (en) | Compound solar cell and manufacturing method | |
| US20080121271A1 (en) | Multi-junction, photovoltaic devices with nanostructured spectral enhancements and methods thereof | |
| CN110192286A (en) | Photovoltaic device | |
| KR101957801B1 (en) | Flexible Double Junction Solar Cell Device | |
| CN105355670B (en) | Five-junction solar energy cells including DBR structure | |
| JP5481665B2 (en) | Multi-junction solar cell | |
| US20120216857A1 (en) | Solar Cell Assembly with an Improved Photocurrent Collection Efficiency | |
| US10910506B1 (en) | Solar cell with gradation in the top window layer | |
| US20110278537A1 (en) | Semiconductor epitaxial structures and semiconductor optoelectronic devices comprising the same | |
| CN106784037B (en) | A kind of more statement of account coloured light batteries in the longitudinal direction of GaAs materials and its cell array | |
| US20150034152A1 (en) | Solar cell with passivation on the window layer | |
| JP2014220351A (en) | Multi-junction solar cell | |
| CN105810760A (en) | Lattice-matched five-junction solar cell and fabrication method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |