CN103426965A - Solar cell and manufacturing method thereof - Google Patents
Solar cell and manufacturing method thereof Download PDFInfo
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- CN103426965A CN103426965A CN2013103593080A CN201310359308A CN103426965A CN 103426965 A CN103426965 A CN 103426965A CN 2013103593080 A CN2013103593080 A CN 2013103593080A CN 201310359308 A CN201310359308 A CN 201310359308A CN 103426965 A CN103426965 A CN 103426965A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a solar cell which comprises a substrate, a GaInAs base cell film layer and an AlGaInP/(Al)GaInP/GaInNAa(Sb)/GaInNAs(Sb) four-junction cell film layer, wherein the GaInAs base cell film layer is formed on the surface of the substrate, and the four-junction cell film layer is bonded with the GaInAs base cell film layer. The invention further discloses a manufacturing method of the solar cell. Compared with a traditional cell, the solar cell integrates the GaInAs base cell film layer and the AlGaInP/(Al)GaInP/GaInNAa(Sb)/GaInNAs(Sb) four-junction cell film layer, and a five-junction efficient low-cost laminated solar cell structure formed after bonding is more effectively matched with solar spectra, so that cell conversion efficiency is improved.
Description
Technical field
The application belongs to area of solar cell, particularly relates to a kind of five knot laminated cells containing the sub-battery of GaInNAs (Sb) and preparation method thereof.
Background technology
Solar spectrum is wide spectrum, and photon energy range is approximately 0 ~ 4eV, has therefore fundamentally determined the energy conversion efficiency of the conversion efficiency of unijunction solar cell lower than (photon energy is greater than band gap width) under corresponding monochromatic spectrum.The method solved is also very simple, principle, with its with one fixedly the solar cell of band gap change all photon energies, be not so good as spectrum is divided into to several zones, realize opto-electronic conversion with the interface in the multijunction solar cell of several band-gap.The energy of supposing spectrum is divided into several regional h ν
1~ h ν
2, h ν
2~ h ν
3, h ν
3~ h ν
∞, h ν wherein
1<h ν
2<h ν
3, in corresponding multijunction solar cell, each interface band gap is respectively Eg
1=h ν
1, Eg
2=h ν
2, Eg
3=h ν
3.The spectrum segmentation is more, and the potential conversion efficiency of battery is higher.
The realization of multijunction cell needs the interface that the direct arrival of photon with it can be flux matched.From conceptive, the simplest solution is light to be assigned to the zones of different in space as prism according to the energy of light with an optics light-dividing device, suitable solar cell is placed on respectively to corresponding zone and collects photon.Yet in actual environment, this optical texture is very complicated, realizes very difficult.Usually a kind of better method is to do a kind of terrace battery structure, light is introduced in the knot of high band gap, then enter into the knot than low band gaps, this structure takes full advantage of " low pass photon filter " function of finishing, only by the light of subordinate's band gap.
GaInNAs (Sb) material due to its band gap (0.8 ~ 1.4 eV) and the lattice constant adjustable extent all very large, be the ideal material of multijunction solar cell development.Three knot laminated cell GaInP/GaAs/GaInNAs (Sb) efficiency containing the sub-battery of GaInNAs (Sb) have obtained important breakthrough at present.In addition, the GaInP/GaAs/GaInNAs (Sb) that contains the sub-battery of GaInNAs (Sb) on the Ge substrate/Ge tetra-knot laminated cells are also one of important aspect that conversion efficiency is further promoted.For further raising efficiency, tying even more multijunction cell containing five of GaInNAs (Sb) must be also development trend.Yet the material system used on same substrate is too much, can cause the unmatched phenomenon of lattice serious.
Summary of the invention
Purpose of the present invention provides a kind of AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb)/GaInAs five knot laminated cells, it has rational band gap combination (2.2/1.7/1.4/1.05/ ~ 0.7eV), can realize taking full advantage of solar spectrum, the final conversion efficiency that improves battery, and avoided the unmatched problem of lattice.
For achieving the above object, the invention provides following technical scheme:
The application discloses a kind of solar cell, comprise substrate, be formed at substrate surface GaInAs base battery rete and with AlGaInP/ (Al) GaInP/GaInNAs (Sb) of GaInAs base battery rete bonding/GaInNAs (Sb) four junction battery retes.
Preferably, in above-mentioned solar cell, also comprise two electrodes that are electrically connected at respectively described AlGaInP layer and GaInAs base battery rete.
Preferably, in above-mentioned solar cell, described GaInAs base battery rete and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes all adopt the duoble-layer table top structure, and in described GaInAs base battery rete and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes, every layer of mesa structure exposed surface all arranges an electrode.
Correspondingly, disclosed herein as well is a kind of manufacture method of solar cell, comprise the steps:
1) be inverted growth AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes on the GaAs substrate, at InP Grown GaInAs base battery rete;
2) GaInNAs (Sb) exposed surface of AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery rete bottoms is bonded to the exposed surface of GaInAs base battery rete;
3) peel off the GaAs substrate;
4) make electrode.
Preferably, in the manufacture method of above-mentioned solar cell, described step also comprises to be peeled off described InP substrate and replaces to silicon, metal or plastic.
Preferably, in the manufacture method of above-mentioned solar cell, described step 1) specifically comprises: successively at GaAs Grown n-AlGaInP, p-AlGaInP, tunnel junction, n-(Al) GaInP, p-(Al) GaInP, tunnel junction, n-GaInNAs (Sb), p-GaInNAs (Sb), tunnel junction, n-GaInNAs (Sb) and p-GaInNAs (Sb).
Preferably, in the manufacture method of above-mentioned solar cell, described step 4) specifically comprises: graphical described GaInAs base battery rete and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes make above-mentioned two retes all form the duoble-layer table top structure; In described GaInAs base battery rete and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes, every layer of mesa structure exposed surface all arranges an electrode.
Preferably, in the manufacture method of above-mentioned solar cell, between described AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes and GaInAs base battery rete, by the metal film layer bonding, the material of described metal film layer is selected from a kind of in gold, gold-tin alloy, titanium, nickel and alloy thereof.
Compared with prior art, the invention has the advantages that:
1, take full advantage of band gap and the large feature of lattice constant adjustable extent of GaInNAs (Sb), having made band gap is two sub-batteries that 1.4eV and band gap are 1.05eV, and can keep Lattice Matching.
2,, in direct growth in the five knot laminated cell processes containing GaInNAs (Sb) material, due to lattice mismatch, defect is more etc., and problem causes the very low problem of GaInNAs (Sb) material minority carrier life time, by the inventive method, is effectively solved.
3, the band gap width of AlGaInP/ (Al) GaInP/GaInNAs (Sb) in the present invention/GaInNAs (Sb)/GaInAs five knot batteries is respectively 2.2eV, 1.7eV, 1.4eV, 1.05eV, 0.7eV, GaInNAs (Sb) material that in three, four knot laminated cells are raised the efficiency, obtain remarkable effect is generalized to five knot laminated cells, can be better with the solar spectrum coupling, realize high efficiency.
4, battery and AlGaInP/ (Al) GaInP/GaInNAs (Sb) at the bottom of GaInAs/GaInNAs (Sb) four knot laminated cells can be grown under different substrates, different chamber and different condition, growth course facilitates controlled, more is conducive to promote the quality of the material of each sub-battery.
5, adopt bonding techniques effectively to avoid the be full of cracks caused because of lattice mismatch and thermal mismatching and come off, increased rate of finished products.
If 6 adopt four electrode terminals, export respectively the electric current of GaInAs base battery and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four knot laminated cells, can avoid the unmatched problem of electric current, be conducive to the lifting of multijunction cell efficiency.
The accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, the accompanying drawing the following describes is only some embodiment that put down in writing in the application, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structure chart of the base battery of the GaInAs at the InP Grown rete that provides of the specific embodiment of the invention;
Fig. 2 is the structure chart of AlGaInP/ (Al) GaInP/GaInNAs (Sb) that is inverted growth on the GaAs substrate that provides of the specific embodiment of the invention/GaInNAs (Sb) four knot laminated cell retes;
Fig. 3 be the specific embodiment of the invention provide by the GaInNAs(Sb of AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four knot laminated cell retes) exposed surface is bonded to the structure chart of GaInAs base battery rete;
Fig. 4 is the structure chart after the GaAs substrate desquamation at top of the five knot laminated cells that obtained by bonding of handle that the specific embodiment of the invention provides;
Fig. 5 be first embodiment of the invention provide with two electrode terminals five the knot laminated cells structure chart;
Fig. 6 be second embodiment of the invention provide with four electrode terminals five the knot laminated cells structure chart.
Embodiment
Based on mono-knot of GaInAs(on AlGaInP/ (Al) GaInP/GaInNAs (Sb) on the GaAs substrate/GaInNAs (Sb) (four knot) and InP substrate) to tie laminated cells are efficient scheme to five of the sub-battery of GaInNAs (Sb) that contains that forms by bonding of battery.Therefore, the present invention proposes the five knot laminated cells that use this structure (AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb)/GaInAs), by the method for bonding, with this, realize the high efficiency, low cost of multijunction solar cell.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work, belong to the scope of protection of the invention.
Shown in ginseng Fig. 5, solar cell comprises substrate 101, is formed at the GaInAs base battery rete 102 of substrate 101 tops and AlGaInP/ (Al) GaInP/GaInNAs (Sb) of GaInAs base battery rete bonding/GaInNAs (Sb) four junction battery retes 202, also comprises two electrodes that are electrically connected at respectively AlGaInP layer and GaInAs base battery rete.
Carry out bonding by metal film layer 301 between GaInAs base battery rete 102 and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202.In other embodiments, also can adopt the Direct Bonding modes such as congruent melting, high-temperature process or electrostatic bonding between the two, also can adopt inverse bonding to connect technique.
AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202 comprise n-AlGaInP, p-AlGaInP, tunnel junction, n-(Al) GaInP, p-(Al) GaInP, tunnel junction, n-GaInNAs (Sb), p-GaInNAs (Sb), tunnel junction, n-GaInNAs (Sb) and the p-GaInNAs (Sb) that is formed at successively GaInAs base battery rete 102 tops.
Shown in ginseng Fig. 1, Fig. 1 is the structure chart at the GaInAs of InP Grown base battery rete by molecular beam epitaxy technique (MBE) or metal organic chemical vapor deposition technology (MOCVD) that the present embodiment provides.
Shown in ginseng Fig. 2, Fig. 2 is that use molecular beam epitaxy technique (MBE) or the metal organic chemical vapor deposition technology (MOCVD) that the present embodiment provides is inverted the structure chart of AlGaInP/ (Al) GaInP/GaInNAs (Sb) of growth/GaInNAs (Sb) four knot laminated cell retes on the GaAs substrate.
Wherein, (Al) GaInP refers to GaInP or is added with the GaInP of Al; GaInNAs (Sb) refers to GaInNAs or is added with the GaInNAs of Sb.
Shown in ginseng Fig. 3, Fig. 3 is the structure chart of five knot laminated cells after the bonding that provides of the present embodiment, can adopt the bonding of two battery retes in the Direct Bonding such as congruent melting, high-temperature process and electrostatic bonding any one, also can adopt metal bonding, inverse bonding to meet a kind of in bonding techniques.
Shown in ginseng Fig. 4, Fig. 4 is the structure chart after the GaAs substrate desquamation at top of the five knot laminated cells that obtained by bonding of handle that the present embodiment provides, can adopt that laser illumination, wet method are peeled off, nanostructure is auxiliary from the method such as peeling off.
With reference to Fig. 4, the present embodiment provides a kind of preliminary structure of five knot laminated cells, comprise that (can change work is silicon to an InP, metal or plastics etc.) substrate 101, one GaInAs base battery rete 102 and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four knot laminated cell retes 202, GaInAs base battery rete 102 is connected by the bonding mode with GaInNAs (Sb) face of AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) rete 202, wherein 301 layers is to adopt metal bonding or inverse bonding to connect the bonded layer in technique, the incident visible ray is still kept to higher transmitance, can not cause the obvious absorption to light, can be considered and do not exist for Direct Bonding.
Fig. 5 be the embodiment of the present invention provide with two electrodes five the knot laminated cells structure chart.
Shown in Fig. 5, if considered the currents match with GaInAs base battery rete at growth AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery films, when perhaps battery is grown, do not consider, after then the sub-battery AlGaInP of top layer attenuate being made to two battery rete currents match, two electrode terminal structure output electric currents can be selected, larger open circuit voltage can be obtained like this.
The present embodiment provides a kind of integrated form GaInAs base battery rete 102 and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery rete 202 bondings and two electrode terminal preparation methods.Preparation technology comprises:
Step 1: adopt MBE or mocvd method to grow GaInAs base battery rete 102 on InP substrate 101, on GaAs substrate 201, be inverted and grow AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202.
Step 2: adopt wafer bonding techniques that GaInNAs (Sb) face of AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202 is bonded to the surface that GaInAs base battery rete 102 is exposed.
By AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202 and GaInAs base battery rete 102 respectively after organic washing, then in the hydrogen fluoride solution that is 7:100 in volume ratio, soak 30 seconds, soak 1 minute in the mixed solution of ammoniacal liquor, hydrogen peroxide and the water that is then 0.05:1:5 in volume ratio, follow with deionized water rinsing and adopt nitrogen to dry up.
Respectively at GaInNAs (Sb) face of AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202 and the exposed surperficial evaporation layer of metal thin layer of GaInAs base battery rete 102, this metal film layer adopts the gold-tin alloy material, and thickness is at 0.1-10nm.Under vacuum environment, the thin metal layer of two battery retes, in the face of accurate, is kept to pressure limit 0.5Mpa, heating-up temperature is 300 ~ 600 ° of C, maintains 10 ~ 120 minutes, makes two battery membranes tunic layers realize metal bonding.
Step 3: adopt the H3PO4-H2O2-H2O caustic solution that proportioning is 3:1:50 to carry out etching, stripping down on the GaAs substrate 201 at the top of the five knot laminated cells that obtained by bonding.
Step 4: adopt photoetching in conjunction with etching etc. to being processed on the upper and lower surface of five junction batteries, and deposit metal electrodes.
Adopt photoresist to make mask, in conjunction with ICP etching successively, make AlGaInP exposed surface and each self-forming mesa structure of base substrate (as InP) of five junction batteries after bonding, then deposited by electron beam evaporation method deposit metal electrodes.
Shown in ginseng Fig. 6, solar cell comprises substrate 101, be formed at the GaInAs base battery rete 102 of substrate 101 tops and AlGaInP/ (Al) GaInP/GaInNAs (Sb) of GaInAs base battery rete bonding/GaInNAs (Sb) four junction battery retes 202, GaInAs base battery rete and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes all adopt the duoble-layer table top structure, and in described GaInAs base battery rete and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes, every layer of mesa structure exposed surface all arranges an electrode 401, 402, 403 and 403.。
Carry out bonding by metal film layer 301 between GaInAs base battery rete 102 and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202.In other embodiments, also can adopt the Direct Bonding modes such as congruent melting, high-temperature process or electrostatic bonding between the two, also can adopt inverse bonding to connect technique.
AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202 comprise n-AlGaInP, p-AlGaInP, tunnel junction, n-(Al) GaInP, p-(Al) GaInP, tunnel junction, n-GaInNAs (Sb), p-GaInNAs (Sb), tunnel junction, n-GaInNAs (Sb) and the p-GaInNAs (Sb) that is formed at successively GaInAs base battery rete 102 tops.
Shown in ginseng Fig. 1, Fig. 1 is the structure chart at the GaInAs of InP Grown base battery rete by molecular beam epitaxy technique (MBE) or metal organic chemical vapor deposition technology (MOCVD) that the present embodiment provides.
Shown in ginseng Fig. 2, Fig. 2 is that use molecular beam epitaxy technique (MBE) or the metal organic chemical vapor deposition technology (MOCVD) that the present embodiment provides is inverted the structure chart of AlGaInP/ (Al) GaInP/GaInNAs (Sb) of growth/GaInNAs (Sb) four knot laminated cell retes on the GaAs substrate.
Shown in ginseng Fig. 3, Fig. 3 is the structure chart of five knot laminated cells after the bonding that provides of the present embodiment, can adopt the bonding of two battery retes in the Direct Bonding such as congruent melting, high-temperature process and electrostatic bonding any one, also can adopt metal bonding, inverse bonding to meet a kind of in bonding techniques.
Shown in ginseng Fig. 4, Fig. 4 is the structure chart after the GaAs substrate desquamation at top of the five knot laminated cells that obtained by bonding of handle that the present embodiment provides, can adopt that laser illumination, wet method are peeled off, nanostructure is auxiliary from the method such as peeling off.
With reference to Fig. 4, the present embodiment provides a kind of preliminary structure of five knot laminated cells, comprise that (can change work is silicon to an InP, metal or plastics etc.) substrate 101, one GaInAs base battery rete 102 and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four knot laminated cell retes 202, GaInAs base battery rete 102 is connected by the bonding mode with GaInNAs (Sb) face of AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) rete 202, wherein 301 layers is to adopt metal bonding or inverse bonding to connect the bonded layer in technique, the incident visible ray is still kept to higher transmitance, can not cause the obvious absorption to light, can be considered and do not exist for Direct Bonding.
With reference to Fig. 6, GaInAs base battery rete 102 all adopts the duoble-layer table top structure with AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) battery rete 202, and in described GaInAs base battery rete 102 and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) battery rete 202, every layer of mesa structure exposed surface all arranges an electrode.Wherein, two mesa structures are, AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) the four junction battery retes 202 of take are example, described AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202 have two-layer table top, have the exposed surface of difference in height.Wherein, electrode 401 and electrode 402 are for the electric current output of GaInAs base battery rete 102, electrode 403 and electrode 404 are for the electric current output of AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202, AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202 are independently exported respectively with the electric current of GaInAs battery rete 102, have been avoided because electric current does not mate the Efficiency Decreasing caused.
The second specific embodiment of the present invention below is provided
The present embodiment provides a kind of integrated form GaInAs base battery rete 102 and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery rete 202 bondings and four electrode terminal preparation methods.Preparation technology comprises:
Step 1: adopt MBE or mocvd method to grow GaInAs base battery rete 102 on InP substrate 101, on GaAs substrate 201, be inverted and grow AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202.
Step 2: adopt wafer bonding techniques that GaInNAs (Sb) face of AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202 is bonded to the surface that GaInAs base battery rete 102 is exposed.
By AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202 and GaInAs base battery rete 102 respectively after organic washing, then in the hydrogen fluoride solution that is 7:100 in volume ratio, soak 30 seconds, soak 1 minute in the mixed solution of ammoniacal liquor, hydrogen peroxide and the water that is then 0.05:1:5 in volume ratio, follow with deionized water rinsing and adopt nitrogen to dry up.
GaInNAs (Sb) face of AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202 and the exposed surface of GaInAs base battery rete 102 are aligned, adopt the pressure of 0.5Mpa to anneal 10 hours under air conditions under 270 ° of C, in the mist that is then 1:10 in hydrogen and nitrogen volume ratio, under 450 ~ 600 ° of C, anneal 30 minutes.
Step 3: the high energy pulse laser that the employing wavelength is 335nm, from GaAs substrate 201 back side illuminatons, after scanning the interface of the five knot laminated cells that obtain after whole GaAs substrate 201 and bonding, gets off the GaAs substrate desquamation at the top of five knot laminated cells.
Step 4: adopt photoetching in conjunction with preparation N-type table top, P type table tops such as etchings, and deposit metal electrodes.
Adopt photoresist to make mask, etch successively table top in conjunction with ICP, make AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202 and GaInAs base battery rete 102 each self-forming duoble-layer table top structures, for deposit metal electrodes 401,402,403,404.
Adopt photoetching to prepare the second N-type table top, the 2nd P type table top in conjunction with methods such as etchings on AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes 202, and on the second N-type table top deposit metal electrodes 404, deposit metal electrodes 403 on a P type table top; Adopt photoetching to prepare the first N-type table top in conjunction with methods such as etchings on GaInAs base battery rete 102, a P type table top, and on the first N-type table top deposit metal electrodes 402, deposit metal electrodes 401 on a P type table top.
Embodiment of the present invention adopts four electrode terminals, and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes and GaInAs base battery rete are exported respectively, with this, realizes higher conversion efficiency.
With conventional batteries, compare, the present invention is integrated GaInAs base battery rete and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes, the five knot high efficiency, low cost stacked solar cell, cascade solar cell structures that form after bonding are mated better with solar spectrum, thereby promote the conversion efficiency of battery.
It should be noted that, in this article, relational terms such as the first and second grades only is used for an entity or operation are separated with another entity or operating space, and not necessarily requires or imply between these entities or operation the relation of any this reality or sequentially of existing.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thereby make the process, method, article or the equipment that comprise a series of key elements not only comprise those key elements, but also comprise other key elements of clearly not listing, or also be included as the intrinsic key element of this process, method, article or equipment.In the situation that not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment that comprises described key element and also have other identical element.
Claims (8)
1. a solar cell, it is characterized in that, comprise substrate, be formed at substrate surface GaInAs base battery rete and with AlGaInP/ (Al) GaInP/GaInNAs (Sb) of GaInAs base battery rete bonding/GaInNAs (Sb) four junction battery retes.
2. solar cell according to claim 1, is characterized in that: also comprise two electrodes that are electrically connected at respectively described AlGaInP layer and GaInAs base battery rete.
3. solar cell according to claim 1, it is characterized in that: described GaInAs base battery rete and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes all adopt the duoble-layer table top structure, and in described GaInAs base battery rete and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes, every layer of mesa structure exposed surface all arranges an electrode.
4. the manufacture method of a solar cell, is characterized in that, comprises the steps:
1) be inverted growth AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes on the GaAs substrate, at InP Grown GaInAs base battery rete;
2) GaInNAs (Sb) exposed surface of AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery rete bottoms is bonded to the exposed surface of GaInAs base battery rete;
3) peel off the GaAs substrate;
4) make electrode.
5. the manufacture method of solar cell according to claim 4, it is characterized in that: described step also comprises to be peeled off described InP substrate and replaces to silicon, metal or plastic.
6. the manufacture method of solar cell according to claim 4, it is characterized in that: described step 1) specifically comprises: successively at GaAs Grown n-AlGaInP, p-AlGaInP, tunnel junction, n-(Al) GaInP, p-(Al) GaInP, tunnel junction, n-GaInNAs (Sb), p-GaInNAs (Sb), tunnel junction, n-GaInNAs (Sb) and p-GaInNAs (Sb).
7. the manufacture method of solar cell according to claim 4, it is characterized in that: described step 4) specifically comprises: graphical described GaInAs base battery rete and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes make above-mentioned two retes all form the duoble-layer table top structure; In described GaInAs base battery rete and AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes, every layer of mesa structure exposed surface all arranges an electrode.
8. the manufacture method of solar cell according to claim 4, it is characterized in that: between described AlGaInP/ (Al) GaInP/GaInNAs (Sb)/GaInNAs (Sb) four junction battery retes and GaInAs base battery rete, by the metal film layer bonding, the material of described metal film layer is selected from a kind of in gold, gold-tin alloy, titanium, nickel and alloy thereof.
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