CN104091849B - Multi-junction solar cell and manufacturing method thereof - Google Patents
Multi-junction solar cell and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 2
- 238000002360 preparation method Methods 0.000 claims description 9
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- 239000003989 dielectric material Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 7
- 230000004044 response Effects 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 230000009466 transformation Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/543—Solar cells from Group II-VI materials
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- Y02E10/544—Solar cells from Group III-V materials
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Abstract
The invention provides a multi-junction solar cell. The multi-junction solar cell at least comprises a bottom sub-cell and a top sub-cell, wherein the top sub-cell is located on the bottom sub-cell. The top sub-cell is only formed on a part of the surface of the bottom sub-cell so that the light receiving area of the top sub-cell can be reduced. When light enters the multi-junction solar cell, a part of the light is directly absorbed by other sub-cells below the top sub-cell, so that a current of the top sub-cell is reduced.
Description
Technical field
The invention belongs to compound semiconductor area of solar cell and in particular to a kind of multijunction solar cell structure and
Its preparation method.
Background technology
Solaode is that one kind utilizes photovoltaic effect, converts solar energy into the semiconductor device of electric energy, by a p
Type and n-type semiconductor combine.When solar irradiation is mapped to device, the sunlight that energy is more than semiconductor energy gap can be inhaled
Receive, and make semiconductor device produce electron hole pair, after connection, form electric current.
Fig. 1 is solar radiation spectrogram, and the main distribution of wavelength is infrared to a few micrometers from 0.3 micron of ultraviolet light
Light, is converted into photon energy, about from 0.4 ev to 4 ev.In order to more amounts of absorbing solar energy, multi-junction solar electricity
Pond is suggested, and the semiconductor element with different energy gaps is stacked by it, and the half of multiple difference energy gaps so can be utilized
Conductor material layer absorbs the sunlight of different-energy respectively to promote photoelectric transformation efficiency.Although energy can be increased in this way
The bandwidth absorbing, but because the semiconductor material layer of different energy gaps is superimposed together, top layer solaode and bottom solar energy
The electric current density difference that battery each produces is excessive, this electric current mismatch, and whole element photoelectric transformation efficiency will be led to lower,
Therefore how to reduce electric current mismatch is an important subject under discussion.
Content of the invention
It is an object of the invention to provide a kind of reduce electric current mismatch and then improve many knots of photoelectric transformation efficiency too
Sun energy battery structure and preparation method thereof, it passes through to reduce light-receiving area of holder battery, reduces the electric current of holder battery, and will
Remaining light is left following sub- battery for absorb, and improves the electric current of lower face battery, is finally reached the electric current of many knots battery
Coupling, thus realize the optimization of multijunction cell efficiency.
According to the first aspect of the invention, a kind of multijunction solar cell, at least includes a bottom battery and and is located at
Holder battery on the battery of described bottom, described holder battery is only formed on the part surface of described bottom battery to reduce top
The light-receiving area of sub- battery, when light is incident to this multijunction solar cell, some light directly by holder battery below
Its minor battery absorbs, and reduces the electric current of described holder battery.
In certain embodiments, the surface area of described holder battery accounts for the 70% ~ 99% of bottom battery.
In certain embodiments, described holder battery has groove figure, exposes the surface of sub- battery below, works as light
When being incident to this groove figure, directly absorbed by the sub- battery of beneath trenches.Preferably, the area of described groove figure accounts for total face
Long-pending 1% ~ 30%.Preferably, the depth of described groove figure is not more than the thickness of described holder battery.
In certain embodiments, described multijunction solar cell includes three knot batteries, and it is respectively ge from top to bottom
First sub- battery, the sub- battery of gaas second, the sub- battery of gainp the 3rd, wherein said 3rd sub- battery is only formed at the second son electricity
On the part surface in pond, described second sub- battery exposed portion surface, when light is incident to this exposed portion surface directly by
Second sub- battery absorbs.Preferably, the area of described holder battery accounts for the 95% ~ 99% of neutron battery.
In certain embodiments, described multijunction solar cell includes four knot batteries, and it is respectively ge from top to bottom
First sub- battery, the sub- battery of ingaas second, the sub- battery of ingaasp or alingaas the 3rd, the sub- battery of alingap the 4th, its
Described in the 4th sub- battery be only formed on the part surface of the 3rd sub- battery, described 3rd sub- battery exposed portion surface, when
Light is incident to and is directly absorbed by the 3rd sub- battery during this exposed portion surface.
According to the second aspect of the invention, a kind of preparation method of multijunction solar cell, including being sequentially depositing extension
Lamination, it include a bottom battery and one be located at described bottom battery on holder battery it is characterised in that: only in described bottom
Form holder battery, to reduce the light-receiving area of holder battery, when light is incident to this many knots sun on the part surface of battery
During energy battery, some light is directly absorbed by its minor battery below holder battery, reduces the electric current of described holder battery.
In certain embodiments, the preparation method of described multijunction solar cell, including step: provide a substrate, at it
On sequentially form each knot battery, its at least include bottom battery and be located at described bottom battery on holder battery；Institute
State holder battery and form groove figure, expose the surface of sub- battery below, when light is incident to this groove figure, by groove
The sub- battery of lower section directly absorbs.Preferably, the area of the groove figure of described formation accounts for the 1% ~ 30% of the gross area.
Brief description
Fig. 1 is solar radiation spectrogram.
Fig. 2 is the side sectional view of first embodiment of the invention three-joint solar cell.
Fig. 3 is the light absorbs schematic diagram of three-joint solar cell shown in Fig. 2.
Fig. 4 is the groove figure of three-joint solar cell shown in Fig. 2.
Fig. 5 is the spectral response curve figure of the sub- battery of gainp.
Fig. 6 is the spectral response curve figure of the sub- battery of gaas.
Fig. 7 is the side sectional view of second embodiment of the invention four-junction solar cell.
Fig. 8 ~ 11 show the structure sectional view in second embodiment of the invention four-junction solar cell manufacturing process.
Specific embodiment
The multijunction solar cell of the present invention is passed through to reduce the light-receiving area of holder battery, reduces the electric current of holder battery,
And leave following sub- battery for absorb by remaining light, improve the electric current of lower face battery, be finally reached many knots battery
Currents match, it is applicable any multijunction cell, such as gainp/gaas binode battery, gainp/gaas/ge are brilliant
Lattice mate three junction batteries, gainp/ ingaas/ingaas tri- junction battery, algainp/ingaasp/ingaas/
Ge tetra- junction battery, gainp/ingaas/ingaas/ingaas tetra- junction battery, gainp/ingaas/
Inganassb/ge tetra- junction battery, algainp/algaas/gaas/inganas/ge five junction battery etc..One
As in the case of, under multijunction solar cell the cut-off current of face battery be 5% ~ 20%, therefore top battery light-receiving area permissible
It is defined to the 70% ~ 97% of the gross area.With reference to specific embodiment, embodiments of the present invention are elaborated.
Fig. 2 shows the side, sectional of first embodiment of the invention gainp/gaas/ge three-joint solar cell 100
Figure.
Refer to Fig. 2, three-joint solar cell 100, including p-type ge substrate 110, the sub- battery 120 of ge first, gaas second
Sub- battery 130, the sub- battery 140 of gainp the 3rd.General, divide between first, second sub- battery, between second, third sub- battery
(not shown) is not connected by tunnel knot.The wherein sub- battery 140 of gainp the 3rd has groove figure 150, and it exposes under it
The part surface 130a of the sub- battery 130 of square gaas second.Refer to accompanying drawing 3, when solaode is placed in sun luminous environment, light
Line laIt is incident to the surface of the 3rd sub- battery 140, absorbed by the 3rd sub- battery, light lbWhen being incident to this groove figure, directly by
The sub- battery 130 of gaas second of beneath trenches absorbs.
Refer to accompanying drawing 4, groove figure 150 can be made up of it is also possible to by a series of a series of grooves parallel to each other
Groove composition intersected with each other, can also be the regularly arranged circle of string system or square groove forms.Preferably, also can be
Filling light transmission dielectric material in groove figure 150, such as silicon nitride, silicon oxide etc., ensure the while protection the second sub- battery
The integrity of three sub- battery physical arrangements.
Refer to accompanying drawing 5 and 6, where figure 5 depicts the spectral response curve of the sub- battery of gainp, Fig. 6 shows gaas
The spectral response curve of battery, it is seen that the sub- battery of gainp to the spectral response of 300nm ~ 680nm band of light is higher than
The sub- battery of gaas second, and the second sub- battery current limliting 5%, therefore groove figure in general gainp/gaas/ge three-joint solar cell
The area of case is less than the 5% of the battery gross area, and generally area accounting takes 95% ~ 99%, preferably takes 97%.
Fig. 7 shows second embodiment of the invention algainp/ingaasp/ingaas/ge four-junction solar electricity
The side sectional view in pond 200.
Refer to accompanying drawing 7, four-junction solar cell 200, including p-type ge substrate 210, the sub- battery 220 of ge first, p-type
Ingaas stress graded bedding 230, the sub- battery 240 of ingaas second, the sub- battery 250 of ingaasp the 3rd and alingap the 4th son electricity
Pond 260, passes through a n++-gaas/p++-gaas tunnel knot and connects (not shown) between wherein each knot battery.Wherein
The sub- battery 260 of algainp the 4th has groove figure 270, and it exposes the part table of the sub- battery 250 of ingaasp the 3rd below
Face 250a.With reference to preparation method, the present embodiment is elaborated.
First, deposit the extension lamination of each knot battery in mocvd reative cell, it include growing the first sub- battery 220, the
Two sub- batteries 240, the 3rd sub- battery 250 and the 4th sub- battery 260.Specific as follows:
1) in p-type ge substrate 210 epitaxial growth N-shaped ga0.5in0.5P Window layer, doping content 5e18/cm3, form ge the
One sub- battery 220；
2) in the sub- battery 220 Epitaxial growth p-type ingaas stress graded bedding 230 of ge first, keep tmga flow constant,
In component is made to be gradient to 0.17 from 0, variation pattern is notch cuttype gradual change, in component every 0.02 about is a ladder, totally 9 layers, often
One ladder growth 250nm；
3) the sub- battery 240 of ingaas second for 1.2ev in p-type ingaas stress graded bedding 230 Epitaxial growth band gap,
Grow the p-type alingaas back surface field layer of 20nm first, regrowth 3 m is thick, doping content is 1 × 1017cm-3P-type
in0.17ga0.83As base, regrowth 200nm is thick, and doping content is 2 × 1018cm-3N-shaped in0.17ga0.83As emission layer, finally
Growth 50nm thickness 1 × 1018cm-3N-shaped ingap Window layer；
4) the sub- battery 250 of ingaasp the 3rd for 1.55ev in the sub- battery 240 Epitaxial growth band gap of ingaas second,
Grow the p-type alingaas back surface field layer of 20nm first, regrowth 3 m is thick, doping content is 1 × 1017cm-3P-type
in0.27ga0.73as0.49p0.51Base, regrowth 300nm is thick, and doping content is 2 × 1018cm-3N-shaped
in0.27ga0.73as0.49p0.51Emission layer, finally grows 50nm thickness 1 × 1018cm-3N-shaped alinp Window layer；
5) the sub- battery 260 of alingap the 4th for 1.85ev in the sub- battery 250 Epitaxial growth band gap of ingaasp the 3rd,
Grow the p-type inalgaas back surface field layer of 100nm first, regrowth 600nm is thick, doping content is 6 × 1016cm-3P-type
Alingap base, regrowth 150nm is thick, and doping content is 5 × 1018cm-3N-shaped alingap emission layer, finally grow 50nm
Thick 5 × 1018cm-3N-shaped alinp Window layer, thus it is brilliant to complete algainp/ingaasp/ ingaas/ge on ge substrate
Lattice mismatch four-junction solar cell, its side sectional view is as shown in Figure 8.
Secondly, the sub- battery 260 of alingap the 4th forms ditch figure 270, expose ingaasp the 3rd son electricity below
The part surface 250a in pond 250.Specific as follows: to refer to accompanying drawing 9, using photoetching process, in the sub- battery 260 of alingap the 4th
Surface makes litho pattern 280；Then being removed using chemical etching does not have the sub- battery 260 of algainp the 4th of photoresist protection,
Form groove 270, as shown in Figure 10；Remove the photoresist 280 on four junction batteries, final acquisition plough groove type algainp/
Ingaasp/ ingaas/ge lattice mismatch four junction battery, as shown in figure 11.
In the present embodiment, made two kinds of samples respectively, the external quantum efficiency of two samples has been tested, two samples are equal
For algainp/ingaasp/ ingaas/ge four-junction solar cell, the wherein sub- battery 260 of the 4th of sample 1 is completely covered
Three sub- batteries 250, that is, do not have channel patterns, and the 4th sub- battery 260 of sample 2 only covers the part surface of the 3rd sub- battery 250,
It is provided with channel patterns (area about 20%), the part surface of the sub- battery 250 in exposed portion the 3rd.Test result is as follows:
Can be seen that from upper table, ingaasp the 3rd knot battery current limliting of sample 1 is serious, its main cause is algainp the
Four sub- cell band gap are relatively low to be led to, and sample 2(is the four-junction solar cell of the present embodiment) ensureing battery other performance
Sub- inter-cell current coupling is achieved, its conversion efficiency under 1000 times of optically focused test conditions reaches in the case of parameter constant
44.1%.
Only as described above, only the preferred embodiments of the invention, when can not limit the model of present invention enforcement with this
Enclose, the simple equivalence changes generally made according to scope of the present invention patent and patent specification content and modification, all still
It is covered by the present invention within the scope of the patent.
Claims (10)
1. multijunction solar cell, at least includes holder battery on described bottom battery for the bottom battery and, institute
State holder battery and there is groove figure, be only formed on the part surface of described bottom battery to reduce the sensitive surface of holder battery
Long-pending, expose the surface of sub- battery below, filling light transmission dielectric material in described groove figure, when light is incident to this many knot
During solaode, some light is directly absorbed by its minor battery below holder battery, reduces the electricity of described holder battery
Stream.
2. multijunction solar cell according to claim 1 it is characterised in that: the surface area of described holder battery accounts for bottom
The 70% ~ 99% of battery.
3. multijunction solar cell according to claim 1 it is characterised in that: the area of described groove figure accounts for the gross area
1% ~ 30%.
4. multijunction solar cell according to claim 1 it is characterised in that: the depth of described groove figure is not more than institute
State the thickness of holder battery.
5. multijunction solar cell according to claim 1 it is characterised in that: include three knot batteries, it is from top to bottom
It is respectively the sub- battery of ge first, the sub- battery of gaas second, the sub- battery of gainp the 3rd, wherein said 3rd sub- battery is only formed at
On the part surface of the second sub- battery, described second sub- battery exposed portion surface, when light is incident to this exposed portion surface
When directly absorbed by the second sub- battery.
6. multijunction solar cell according to claim 5 it is characterised in that: the area of described 3rd sub- battery accounts for second
The 95% ~ 99% of sub- battery.
7. multijunction solar cell according to claim 1 it is characterised in that: include four knot batteries, it is from top to bottom
It is respectively the sub- battery of ge first, the sub- battery of ingaas second, the sub- battery of ingaasp or alingaas the 3rd, alingap the 4th
Battery, wherein said 4th sub- battery is only formed on the part surface of the 3rd sub- battery, described 3rd sub- battery exposed portion
Surface, is directly absorbed by the 3rd sub- battery when light is incident to this exposed portion surface.
8. the preparation method of multijunction solar cell, including being sequentially depositing extension lamination, it includes a bottom battery and and is located at
Holder battery on described bottom battery it is characterised in that: form holder electricity only on the part surface of described bottom battery
Pond, to reduce the light-receiving area of holder battery, the described holder battery of formation has groove figure, exposes sub- battery below
Surface, and fill light transmission dielectric material, when light is incident to this multijunction solar cell, part in described groove figure
Light is directly absorbed by its minor battery below holder battery, reduces the electric current of described holder battery.
9. the preparation method of multijunction solar cell according to claim 8, including step:
One substrate is provided, sequentially forms each knot battery thereon, it at least includes bottom battery and is located at described bottom battery
On holder battery；
Form groove figure in described holder battery, expose the surface of sub- battery below, when light is incident to this groove figure
When, directly absorbed by the sub- battery of beneath trenches.
10. according to claim 9 multijunction solar cell preparation method it is characterised in that: the face of described groove figure
Amass and account for the 1% ~ 30% of the gross area.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410368077.4A CN104091849B (en) | 2014-07-29 | 2014-07-29 | Multi-junction solar cell and manufacturing method thereof |
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| CN104091849B (en) * | 2014-07-29 | 2017-01-18 | 天津三安光电有限公司 | Multi-junction solar cell and manufacturing method thereof |
| CN104659140B (en) * | 2015-03-06 | 2017-03-01 | 天津三安光电有限公司 | A kind of multijunction solar cell |
| US11563133B1 (en) | 2015-08-17 | 2023-01-24 | SolAero Techologies Corp. | Method of fabricating multijunction solar cells for space applications |
| CN106601856B (en) * | 2015-10-13 | 2018-05-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-joint solar cell and preparation method thereof |
| CN106784108B (en) * | 2015-11-20 | 2019-05-31 | 北京创昱科技有限公司 | A kind of binode Thinfilm solar cell assembly and preparation method thereof |
| US10700230B1 (en) | 2016-10-14 | 2020-06-30 | Solaero Technologies Corp. | Multijunction metamorphic solar cell for space applications |
| TWI669473B (en) * | 2016-11-07 | 2019-08-21 | 張忠誠 | Method and structure for increasing solar cell power generation per unit erection area |
| GB2573810B (en) | 2018-05-18 | 2021-02-24 | Graphene Composites Ltd | Protective shield and shield wall |
| KR102224624B1 (en) | 2019-02-27 | 2021-03-08 | 한국과학기술연구원 | Multi-junction solar cell and manufacturing method of the same |
| EP3799136B1 (en) * | 2019-09-27 | 2023-02-01 | AZUR SPACE Solar Power GmbH | Monolithic multi-juntion solar cell with exactly four subcells |
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| JPS62104080A (en) * | 1985-10-30 | 1987-05-14 | Sharp Corp | Solar battery cell |
| CN1177375C (en) * | 2003-01-14 | 2004-11-24 | 河北科技大学 | Solar energy conversion photocell with multi-junction and poles joined |
| US20100084924A1 (en) * | 2008-10-07 | 2010-04-08 | Sunlight Photonics Inc. | Apparatus and method for producing ac power |
| CN101499493A (en) * | 2009-02-23 | 2009-08-05 | 东南大学 | Three-junction solar cell |
| US8431815B2 (en) * | 2009-12-22 | 2013-04-30 | Los Alamos National Security, Llc | Photovoltaic device comprising compositionally graded intrinsic photoactive layer |
| WO2012057604A1 (en) * | 2010-10-29 | 2012-05-03 | Mimos Berhad | Nanostructure-based photovoltaic cell |
| US10084106B2 (en) * | 2011-05-02 | 2018-09-25 | Mcmaster University | Areal current matching of tandem solar cells |
| KR101357059B1 (en) * | 2011-11-24 | 2014-02-05 | (재)한국나노기술원 | Multijunction Solar Cell Having Electric Current Matching Structure |
| CN103426965B (en) * | 2013-08-16 | 2016-12-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Solaode and preparation method thereof |
| CN104091849B (en) * | 2014-07-29 | 2017-01-18 | 天津三安光电有限公司 | Multi-junction solar cell and manufacturing method thereof |
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