CN107099294A - A kind of corrosive liquid and its application process for being used to prepare silicon nanowire structure - Google Patents
A kind of corrosive liquid and its application process for being used to prepare silicon nanowire structure Download PDFInfo
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- CN107099294A CN107099294A CN201710252782.1A CN201710252782A CN107099294A CN 107099294 A CN107099294 A CN 107099294A CN 201710252782 A CN201710252782 A CN 201710252782A CN 107099294 A CN107099294 A CN 107099294A
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- Prior art keywords
- corrosive liquid
- silicon nanowire
- nanowire structure
- hydrofluoric acid
- silver nitrate
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 239000002070 nanowire Substances 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 28
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 239000007788 liquid Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 24
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 12
- 229910001961 silver nitrate Inorganic materials 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 10
- 230000007797 corrosion Effects 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- XRRQZKOZJFDXON-UHFFFAOYSA-N nitric acid;silver Chemical compound [Ag].O[N+]([O-])=O XRRQZKOZJFDXON-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Abstract
The present invention provides the corrosive liquid and its application method that a kind of wet chemical etch method prepares silicon nanowire structure, it is characterised in that the formula of the corrosive liquid is following components and levels：The 9.2mol/L of hydrofluoric acid 2.3；The 0.08mol/L of silver nitrate 0.005.Its application process is that will be placed in after p-type [111] crystal orientation Wafer Cleaning of nano thread structure to be prepared in the 4.6mol/L of hydrofluoric acid 2.3, the 0.05mol/L of silver nitrate 0.015 corrosive liquid；Etching time is 15 30 minutes, and also temperature is 40 55 degrees Celsius for corrosion, then takes out and is cleaned with deionized water.Silicon nanowire structure length, the uniformity of preparation are preferable；Independence is higher between different nano wires, and boundling phenomenon is few；The up rightness of nano thread structure and silicon substrate is good.
Description
Technical field
The present invention relates to technical field of semiconductors, corrosive liquid and the corrosive liquid more particularly, to a kind of silicon nanowire structure
Application process.
Background technology
In current semiconductor applications, silicon nanowire structure is led because of it in semiconductor micro device, silica-based solar cell etc.
Extremely tempting potential using value that domain is shown and by the common concern of industry, wherein utilizing wet chemical etch legal system
The research of standby silicon nanowire structure reports recent years successively, but this method is the problem of still suffer from many to be modified, than
Such as：Angulation is not more mixed and disorderly etc. between obvious, nano wire and silicon substrate for the nano thread structure prepared.
The content of the invention
The purpose of the present invention is exactly that there is provided one kind in order to overcome the defect of above-mentioned wet chemical etch method prior art presence
Prepare the preferable corrosive liquid of effect and its application process.
The solution of the present invention can be achieved through the following technical solutions：
A kind of wet chemical etch method prepares the corrosive liquid of silicon nanowire structure, it is characterised in that the formula of the corrosive liquid
For following components and levels：
Hydrofluoric acid 2.3-9.2mol/L；
Silver nitrate 0.005-0.08mol/L；
Wherein described hydrofluoric acid concentration is preferably 4.4-4.6mol/L, and silver nitrate concentration is preferably 0.02-0.03mol/
L。
A kind of application process for the corrosive liquid that silicon nanowire structure is prepared for wet chemical etch method, by nanometer to be prepared
It is placed in after the Wafer Cleaning of cable architecture in corrosive liquid, then takes out and cleaned with deionized water, it is characterised in that：Shown silicon chip is P
Type [111] crystal orientation；The formula of corrosive liquid is following components and levels：Hydrofluoric acid 2.3-4.6mol/L, silver nitrate 0.015-
0.05mol/L；Etching time is 15-30 minutes, and also temperature is 40-55 degrees Celsius for corrosion.
Further, the application process is using technical scheme once：
Described hydrofluoric acid concentration is preferably 4.4-4.6mol/L, and silver nitrate concentration is preferably 0.02-0.03mol/L.
The etching time is 28-30 minutes.
The corrosion temperature is 48-50 degrees Celsius.
The advantage of this programme is：Silicon nanowire structure length, the uniformity of preparation are preferable；It is independent between different nano wires
Property is higher, and boundling phenomenon is few；The up rightness of nano thread structure and silicon substrate is good.
Brief description of the drawings
Fig. 1 is respectively 4.6mol/L, 0.02mol/L for hydrofluoric acid, acid+nitric acid silver concentration in corrosive liquid, and corrosion temperature is 50
Degree Celsius, etching time is the SEM photograph obtained for 30 minutes；
Fig. 2 is Fig. 1 close shot SEM photograph；Fig. 3 is nanowire length and the relation of etching time in embodiment described in Fig. 1.
Embodiment
Below in conjunction with the accompanying drawings 1 and the present embodiment the present invention is described in detail.
By p-type [111] to thick about 0.5 millimeter, after resistivity is 1-10 Ω cm Wafer Cleaning, hydrofluoric acid, acid are inserted
Silver nitrate concentration is respectively 4.6mol/L, 0.02mol/L, and corrosion temperature is progress wet chemistry quarter in 50 degrees Celsius of corrosive liquid
Erosion method, etching time is 30 minutes.Silicon chip after corrosion finally is carried out cleaning to obtained SEM photograph such as Fig. 1 with deionized water
With shown in Fig. 2, wherein the cleaning step of silicon chip is that those skilled in the art know technology, be will not be repeated here.
From accompanying drawing 1, when growth temperature is 50 DEG C, sample has typical nano thread structure, compares other temperature systems
Standby silicon nanowires, sample silicon nanowire array is obvious, the vertical silicon face of nano wire.
From accompanying drawing 2, when growth temperature is 50 DEG C, certain boundling phenomenon but simultaneously occurs for the top of nano thread structure
Not serious, silicon nanowires diameter is in 20nm or so, length about 15um.
Certain boundling phenomenon occurs for the top on nano thread structure can be serious with the increase of etching time, but reduces
Etching time can influence the length of nano wire, therefore the present embodiment employs the preferred time of compromise：30 minutes.Work as etching time
After 30 minutes, boundling phenomenon more can seriously influence the effect structure of silicon nanowire array.
On in the case of this implementation corrosive liquid composition and temperature, the relation of nanowire length and etching time is such as
Shown in Figure of description 3, the table can be by professional and technical personnel in known the present embodiment in the case of corrosive liquid composition and temperature
Obtained by limited trials.
The application example of technical solution of the present invention is described in detail above, it is only provided as an example, is not intended as the present invention
Application limitation.The equivalent substitution of all operating conditions, is within the scope of the present invention.
Claims (6)
1. a kind of wet chemical etch method prepares the corrosive liquid of silicon nanowire structure, it is characterised in that the formula of the corrosive liquid is
Following components and levels：Hydrofluoric acid 2.3-9.2mol/L；Silver nitrate 0.005-0.08mol/L.
2. the corrosive liquid according to claim 1 for preparing silicon nanowire structure, it is characterised in that：Described hydrofluoric acid concentration
Preferably 4.4-4.6mol/L, silver nitrate concentration is preferably 0.02-0.03mol/L.
3. a kind of application process for the corrosive liquid that silicon nanowire structure is prepared for wet chemical etch method, by nano wire to be prepared
It is placed in after the Wafer Cleaning of structure in corrosive liquid, then takes out and cleaned with deionized water, it is characterised in that：Shown silicon chip is p-type
[111] crystal orientation；The formula of corrosive liquid is following components and levels：Hydrofluoric acid 2.3-4.6mol/L, silver nitrate 0.015-
0.05mol/L；Etching time is 15-30 minutes, and also temperature is 40-55 degrees Celsius for corrosion.
4. the application side of the corrosive liquid according to claim 3 that silicon nanowire structure is prepared for wet chemical etch method
Method, it is characterised in that：Described hydrofluoric acid concentration is preferably 4.4-4.6mol/L, and silver nitrate concentration is preferably 0.02-
0.03mol/L。
5. the application side of the corrosive liquid according to claim 3 that silicon nanowire structure is prepared for wet chemical etch method
Method, it is characterised in that：The etching time is 28-30 minutes.
6. the application side of the corrosive liquid according to claim 3 that silicon nanowire structure is prepared for wet chemical etch method
Method, it is characterised in that：The corrosion temperature is 48-50 degrees Celsius.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710252782.1A CN107099294A (en) | 2017-04-11 | 2017-04-11 | A kind of corrosive liquid and its application process for being used to prepare silicon nanowire structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710252782.1A CN107099294A (en) | 2017-04-11 | 2017-04-11 | A kind of corrosive liquid and its application process for being used to prepare silicon nanowire structure |
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| Publication Number | Publication Date |
|---|---|
| CN107099294A true CN107099294A (en) | 2017-08-29 |
Family
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|---|---|---|---|
| CN201710252782.1A Pending CN107099294A (en) | 2017-04-11 | 2017-04-11 | A kind of corrosive liquid and its application process for being used to prepare silicon nanowire structure |
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