CN104766790B - A kind of phosphorus, boron liquid source perfect diffusion technique - Google Patents
A kind of phosphorus, boron liquid source perfect diffusion technique Download PDFInfo
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- CN104766790B CN104766790B CN201510105059.1A CN201510105059A CN104766790B CN 104766790 B CN104766790 B CN 104766790B CN 201510105059 A CN201510105059 A CN 201510105059A CN 104766790 B CN104766790 B CN 104766790B
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- silicon chip
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- boron
- diffusion
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 44
- 238000009792 diffusion process Methods 0.000 title claims abstract description 39
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910052698 phosphorus Inorganic materials 0.000 title claims abstract description 38
- 239000011574 phosphorus Substances 0.000 title claims abstract description 38
- 239000007788 liquid Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 57
- 239000010703 silicon Substances 0.000 claims abstract description 57
- 238000003475 lamination Methods 0.000 claims abstract description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000004484 Briquette Substances 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229960000583 acetic acid Drugs 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 235000013312 flour Nutrition 0.000 claims description 3
- 239000012362 glacial acetic acid Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000010422 painting Methods 0.000 claims description 3
- 238000012805 post-processing Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 230000003667 anti-reflective effect Effects 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Removal Of Specific Substances (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses a kind of phosphorus, boron liquid source perfect diffusion technique, mainly realized by following steps：The face rotary coating liquid boron source of silicon chip one after two-sided be thinned, is toasted, then rotary coating liquid phosphorus source again, lamination, phosphorus source face and phosphorus source face is carried out after baking, relative overlay carries out a perfect diffusion two-by-two on silicon boat for boron source face and boron source face.Such diffusion junction depth flat even, product breakdown reverse voltage stabilization, homogeneity can be made good；Diffusion concentration gradient reduces, and can effectively improve PN junction field strength, improve the resistance to discharge capability of product, and can effectively improve product anti-reflective to surge capacity；Silicon chip edge returns that source amount is small, and internal defect is few simultaneously, and product reliability is high.Processing cost is low, and technique is simple, is readily produced.
Description
Technical field
The present invention relates to the manufacturing process of semiconductor devices, more particularly to a kind of phosphorus, boron liquid source perfect diffusion technique.
Background technology
The making of some devices can use diffusion technique and form PN junction, expansion commonly used in the trade at present mostly in semicon industry
Day labor skill is typically spread twice using phosphorus paper source, a boron paper source perfect diffusion or using phosphorus, boron, these diffusion ways there is
The defects of inevitable：1) the diffusion junction depth of paper source diffusion is uneven, and the anti-source of silicon chip edge is more, and device Surge handling capability is poor；2)
The mode technique making spread twice is cumbersome, and after one side phosphorus diffusion, another side needs sandblasting or chemical reduction to remove anti-source
Amount, then boron diffusion is carried out, cost is high, and easily causes fragment.
The content of the invention
The technical problems to be solved by the invention are：There is provided one kind can make diffusion junction depth is flat, device Surge handling capability compared with
By force, and silicon chip edge returns a kind of phosphorus, boron liquid source perfect diffusion work that source is small, defect is few, processing cost is low in wafer bulk
Skill.
To solve the above problems, the technical solution adopted by the present invention is：A kind of phosphorus, boron liquid source perfect diffusion technique,
Comprise the following steps：
1), silicon chip is two-sided is thinned：Using nitric acid, hydrofluoric acid, glacial acetic acid, original silicon chip is carried out according to 3: 1: 1 ratio
Two-sided corrosion, remove surface damage layer；
2), cleaned before diffusion：Process is cleaned by ultrasonic by acid, alkali, deionized water, silicon chip surface is chemically treated；
3) boron source, is applied：The surface of silicon chip after cleaning is uniformly coated with boron source, and the concentration of the boron source is 1%~15%,
Purity is 99.9%；
4), toast for the first time：Silicon chip after painting boron source is toasted, temperature is 60~80 DEG C, and the time is 10 minutes；
5) phosphorus source, is applied：The back side of silicon chip after baking is uniformly coated with phosphorus source, and the concentration of phosphorus source is 1%~20%,
Purity is 99.9%；
6), second of baking：The silicon chip behind two-sided source will be applied to be toasted, temperature is 60~80 DEG C, and the time is 20~40
Minute；
7), lamination, dress boat：A little silica flour is spread applying boron source face, then that silicon chip is relative two-by-two, i.e. phosphorus source face and phosphorus source
Face, boron source face is relative with boron source face to be stacked, and erects pendulum on silicon boat, and with silico briquette jam-packed；
8), spread：The silicon chip for filling boat is diffused at 1270~1275 DEG C, forms diffusion junctions；
9), diffusion post processing：It is cleaned by ultrasonic with acid soak, deionized water, separates silicon chip, and remove surface oxide layer.
Preferably, in the step 3), silicon chip is placed on circulator, boron source dropped in the surface of silicon chip
The heart, starting circulator makes silicon slice rotating, and the rotating speed of circulator is 3000~4000 revs/min.
Preferably, in the step 5), silicon chip is placed on circulator in turn, phosphorus source is dropped in into silicon chip
Back side center, starting circulator makes silicon slice rotating, and the rotating speed of circulator is 3000~4000 revs/min.
The beneficial effects of the invention are as follows：1. the phosphorus of the present invention, boron liquid source perfect diffusion technique, using the basic phase of concentration
When phosphorus, boron liquid source be diffused, the anti-source of silicon chip edge amount is small, and effective area utilization rate is high.
2. carrying out a perfect diffusion using the liquid source of low concentration high-purity, such diffusion junction depth flat even can be with
Improve the homogeneity and stability of product breakdown voltage.
3. a this perfect diffusion of liquid source reduces silicon chip surface concentration, concentration gradient reduces, and can effectively improve
PN junction field strength, improve product resistance to discharge capability and anti-reflective to surge capacity.
Brief description of the drawings
Fig. 1 is the flow chart of the present invention；
Embodiment
A kind of phosphorus of the present invention, boron liquid source perfect diffusion technique are made below by specific embodiment further
Detailed description.
As shown in figure 1, a kind of phosphorus, boron liquid source perfect diffusion technique, comprise the following steps：
1), silicon chip is two-sided is thinned：Using nitric acid, hydrofluoric acid, glacial acetic acid, original silicon chip is carried out according to 3: 1: 1 ratio
Two-sided corrosion, remove surface damage layer；
2), cleaned before diffusion：Process is cleaned by ultrasonic by acid, alkali, deionized water, silicon chip surface is chemically treated；
3) boron source, is applied：Silicon chip after cleaning is placed on circulator, and boron source is dropped in the centre of surface of silicon chip, is started
Circulator makes silicon slice rotating, and the rotating speed of circulator is 3000~4000 revs/min, and the concentration of the boron source is 1%~15%, pure
Spend for 99.9%；
4), toast for the first time：Silicon chip after painting boron source is toasted, temperature is 60~80 DEG C, and the time is 10 minutes；
5) phosphorus source, is applied：Silicon chip after baking is placed on circulator, and phosphorus source is dropped in the back side center of silicon chip, is started
Circulator makes silicon slice rotating, and the rotating speed of circulator is 3000~4000 revs/min, and the concentration of phosphorus source is 1%~20%, pure
Spend for 99.9%.
6), second of baking：The silicon chip behind two-sided source will be applied to be toasted, temperature is 60~80 DEG C, and the time is 20~40
Minute；
7), lamination, dress boat：A little silica flour is spread applying boron source face, then that silicon chip is relative two-by-two, i.e. phosphorus source face and phosphorus source
Face, boron source face is relative with boron source face to be stacked, and erects pendulum on silicon boat, and with silico briquette jam-packed；
8), spread：The silicon chip for filling boat is diffused at 1270~1275 DEG C, forms diffusion junctions；
9), diffusion post processing：It is cleaned by ultrasonic with acid soak, deionized water, separates silicon chip, and remove surface oxide layer.
The diffusion junction depth result of perfect diffusion：
| Junction depth | Standard | Edge 2mm | The 1/2 of radius | Central point | The 1/2 of radius | Edge 2mm | Average value | Deviation | Judge |
| Phosphorus knot (um) | 45±3 | 45 | 44 | 46 | 45 | 46 | 45.2 | 0.748 | It is qualified |
| Boron knot (um) | 80±3 | 80 | 81 | 79 | 78 | 80 | 79.6 | 1.020 | It is qualified |
The anti-source amount in edge<1mm
Make the resistance to electric discharge result of sample：
| Sample | Voltage (kv) | Resistance to electric discharge | Judge |
| 1 | 14 | 40kv × 600 time | OK |
| 2 | 14 | 40kv × 600 time | OK |
| 3 | 14 | 40kv × 600 time | OK |
| 4 | 14 | 40kv × 600 time | OK |
| 5 | 14 | 40kv × 600 time | OK |
| 6 | 14 | 40kv × 600 time | OK |
| 7 | 14 | 40kv × 600 time | OK |
| 8 | 14 | 40kv × 600 time | OK |
| 9 | 14 | 40kv × 600 time | OK |
| 10 | 14 | 40kv × 601 time | OK |
Experiment proves that：Using liquid phosphorus source, boron source perfect diffusion technique, diffusion junction depth is uniform, and flatness is good, silicon chip
The anti-source amount in edge is less than 1mm.The resistance to discharge capability of product of making is strong, and reliability is high.
The principle and its effect of the above embodiments only illustrative the invention, and the implementation that part uses
Example, not for the limitation present invention；It should be pointed out that for the person of ordinary skill of the art, wound of the present invention is not being departed from
On the premise of making design, various modifications and improvements can be made, these belong to protection scope of the present invention.
Claims (3)
1. a kind of phosphorus, boron liquid source perfect diffusion technique, it is characterised in that：Comprise the following steps：
1), silicon chip is two-sided is thinned：Using nitric acid, hydrofluoric acid, glacial acetic acid, according to 3:1:1 ratio carries out two-sided to original silicon chip
Corrosion, remove surface damage layer；
2), cleaned before diffusion：Process is cleaned by ultrasonic by acid, alkali, deionized water, silicon chip surface is chemically treated；
3) boron source, is applied：The surface of silicon chip after cleaning is uniformly coated with boron source, and the concentration of the boron source is 1%~15%, purity
For 99.9%；
4), toast for the first time：Silicon chip after painting boron source is toasted, temperature is 60~80 DEG C, and the time is 10 minutes；
5) phosphorus source, is applied：The back side of silicon chip after baking is uniformly coated with phosphorus source, and the concentration of phosphorus source is 1%~20%, purity
For 99.9%；
6), second of baking：The silicon chip behind two-sided source will be applied to be toasted, temperature is 60~80 DEG C, and the time is 20~40 minutes；
7), lamination, dress boat：A little silica flour is spread applying boron source face, then that silicon chip is relative two-by-two, i.e. phosphorus source face and phosphorus source face, boron
Source face is relative with boron source face to be stacked, and erects pendulum on silicon boat, and with silico briquette jam-packed；
8), spread：The silicon chip for filling boat is diffused at 1270~1275 DEG C, forms diffusion junctions；
9), diffusion post processing：It is cleaned by ultrasonic with acid soak, deionized water, separates silicon chip, and remove surface oxide layer.
2. a kind of phosphorus according to claim 1, boron liquid source perfect diffusion technique, it is characterised in that：The step 3)
In, silicon chip is placed on circulator, boron source is dropped in the centre of surface of silicon chip, starting circulator makes silicon slice rotating, circulator
Rotating speed be 3000~4000 revs/min.
3. a kind of phosphorus according to claim 1 or 2, boron liquid source perfect diffusion technique, it is characterised in that：The step
5) in, silicon chip is placed on circulator in turn, phosphorus source is dropped in the back side center of silicon chip, starting circulator revolves silicon chip
Turn, the rotating speed of circulator is 3000~4000 revs/min.
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| CN109309001B (en) * | 2017-07-26 | 2022-05-03 | 天津环鑫科技发展有限公司 | Method for manufacturing GPP chip by adopting printing process |
| CN109309142B (en) * | 2017-07-26 | 2021-09-07 | 天津环鑫科技发展有限公司 | Liquid source diffusion process before silicon wafer glass passivation |
| CN109308994A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | Silicon wafer source coating process by adopting screen printing technology |
| CN109755118B (en) * | 2017-11-01 | 2023-05-23 | 天津环鑫科技发展有限公司 | FRGPP chip glass-front multiple diffusion process |
| CN109755117B (en) * | 2017-11-01 | 2023-05-23 | 天津环鑫科技发展有限公司 | Method for manufacturing FRGPP chip by adopting printing process |
| CN109659224B (en) * | 2018-12-14 | 2023-03-31 | 济南卓微电子有限公司 | Boron-phosphorus co-expansion process for monocrystalline silicon wafer |
| CN109675858A (en) * | 2018-12-20 | 2019-04-26 | 天津中环领先材料技术有限公司 | A kind of cleaning process after wafer thinning |
| CN109712876A (en) * | 2018-12-30 | 2019-05-03 | 重庆市妙格半导体研究院有限公司 | A kind of PN junction method of diffusion |
| CN111710597A (en) * | 2020-06-30 | 2020-09-25 | 山东宝乘电子有限公司 | Method for manufacturing silicon rectifying chip substrate by utilizing boron-phosphorus one-step diffusion |
| CN113161230B (en) * | 2020-12-14 | 2022-05-17 | 安徽安芯电子科技股份有限公司 | Diffusion process of phosphorus-boron synchronous one-time diffusion graded junction chip |
| CN113178385B (en) * | 2021-03-31 | 2022-12-23 | 青岛惠科微电子有限公司 | Chip manufacturing method and device and chip |
| CN114724936A (en) * | 2022-03-30 | 2022-07-08 | 青岛惠科微电子有限公司 | Preparation method of semiconductor device and semiconductor device |
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| CN102087976B (en) * | 2010-12-10 | 2012-07-04 | 天津中环半导体股份有限公司 | Fast recovery diode (FRD) chip and production process thereof |
| US8895348B2 (en) * | 2011-12-20 | 2014-11-25 | Innovalight Inc | Methods of forming a high efficiency solar cell with a localized back surface field |
| CN102709389B (en) * | 2012-05-27 | 2015-04-22 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing double-faced back contact solar cell |
| CN103151427A (en) * | 2013-03-25 | 2013-06-12 | 泰通(泰州)工业有限公司 | Process for preparing two-sided battery |
| CN203659906U (en) * | 2013-12-27 | 2014-06-18 | 洛阳单晶硅有限责任公司 | Mixed acid supply device used in silicon wafer surface lattice structure damage treatment |
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