CN107118774A - A kind of method for preparing constant tilt angle silicon nanowire structure - Google Patents
A kind of method for preparing constant tilt angle silicon nanowire structure Download PDFInfo
- Publication number
- CN107118774A CN107118774A CN201710252784.0A CN201710252784A CN107118774A CN 107118774 A CN107118774 A CN 107118774A CN 201710252784 A CN201710252784 A CN 201710252784A CN 107118774 A CN107118774 A CN 107118774A
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- China
- Prior art keywords
- corrosive liquid
- nanowire structure
- tilt angle
- silicon nanowire
- hydrofluoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000002070 nanowire Substances 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 18
- 239000010703 silicon Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 15
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001961 silver nitrate Inorganic materials 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000000126 substance Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- XRRQZKOZJFDXON-UHFFFAOYSA-N nitric acid;silver Chemical compound [Ag].O[N+]([O-])=O XRRQZKOZJFDXON-UHFFFAOYSA-N 0.000 description 2
- 230000000739 chaotic effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention provides a kind of method for preparing constant tilt angle silicon nanowire structure, it is characterized in that, it is that etching time is 15 30 minutes in the 4.6mol/L of hydrofluoric acid 2.3, the 0.05mol/L of silver nitrate 0.015 corrosive liquid that formula will be placed in after p-type [111] crystal orientation Wafer Cleaning of nano thread structure to be prepared, corrosive liquid temperature is 90 100 degrees Celsius, then takes out and is cleaned with deionized water.Nano wire incline direction prepared by the method and silicon substrate normal direction angle are 55 DEG C, show that nano wire grows along [100] crystal orientation.
Description
Technical field
The present invention relates to technical field of semiconductors, corrosive liquid and the corrosive liquid more particularly, to a kind of silicon nanowire structure
Application process.
Background technology
In current semiconductor applications, silicon nanowire structure is led because of it in semiconductor micro device, silica-based solar cell etc.
Extremely tempting potential using value that domain is shown and by the common concern of industry, wherein utilizing wet chemical etch legal system
The research of standby silicon nanowire structure reports recent years successively, but this method is the problem of still suffer from many to be modified, than
Such as：Angulation is more mixed and disorderly etc. between nano wire and silicon substrate.
The content of the invention
The purpose of the present invention is exactly that there is provided one kind in order to overcome the defect of above-mentioned wet chemical etch method prior art presence
The preparation method into a fixed angle between silicon substrate can be prepared.
The solution of the present invention can be achieved through the following technical solutions：
The corrosive liquid that a kind of wet chemical etch method prepares silicon nanowire structure is provided first, it is characterised in that the corrosion
The formula of liquid is following components and levels：
Hydrofluoric acid 2.3-9.2mol/L；
Silver nitrate 0.005-0.08mol/L；
Wherein described hydrofluoric acid concentration is preferably 4.4-4.6mol/L, and silver nitrate concentration is preferably 0.02-0.03mol/
L。
A kind of application process for the corrosive liquid that silicon nanowire structure is prepared for wet chemical etch method, by nanometer to be prepared
It is placed in after the Wafer Cleaning of cable architecture in corrosive liquid, then takes out and cleaned with deionized water, it is characterised in that：Shown silicon chip is P
Type [111] crystal orientation；The formula of corrosive liquid is following components and levels：Hydrofluoric acid 2.3-4.6mol/L, silver nitrate 0.015-
0.05mol/L；Etching time is 15-30 minutes, and corrosive liquid temperature is 90-100 degrees Celsius.
Further, the application process is using technical scheme once：
Described hydrofluoric acid concentration is preferably 4.4-4.6mol/L, and silver nitrate concentration is preferably 0.02-0.03mol/L.
The etching time is 28-30 minutes.
The corrosion temperature is 98-100 degrees Celsius.
The advantage of the invention is that：The nano wire incline direction of preparation and silicon substrate normal direction angle are 55 DEG C, are shown
Nano wire along [100] crystal orientation grow, for the later stage to nanowire growth direction and with substrate angulation require it is follow-up
Basis is improved using providing.
Brief description of the drawings
Fig. 1 is respectively 4.6mol/L, 0.02mol/L for hydrofluoric acid, acid+nitric acid silver concentration in corrosive liquid, and corrosion temperature is
100 degrees Celsius, etching time is the SEM photograph obtained for 30 minutes.
Embodiment
Below in conjunction with the accompanying drawings 1 and the present embodiment the present invention is described in detail.
After resistivity is 1-10 Ω cm Wafer Cleaning, it will be put by p-type [111] to thick about 0.5 millimeter in the present embodiment
It is respectively 4.6mol/L, 0.02mol/L to enter hydrofluoric acid, acid+nitric acid silver concentration, and corrosion temperature is enters in 100 degrees Celsius of corrosive liquid
Row wet chemical etch method, etching time is 30 minutes.Finally the silicon chip after corrosion is carried out with deionized water to clean what is obtained
SEM photograph as shown in figure 1, wherein the cleaning step of silicon chip be those skilled in the art know technology, will not be repeated here.
From accompanying drawing 1, when corrosion temperature is 100 degrees Celsius, though the sample silicon nanowire structure of preparation is more chaotic,
Nano wire incline direction is fixed as 55 degree with substrate normal angular separation, shows that nano wire grows along [100] crystal orientation.Therefore it is right
In there is potential application value to nanowire growth direction and with field that substrate angulation is required, for the later stage to receiving
Nanowire growth direction and the subsequent applications required with substrate angulation provide and improve basis.
The application example of technical solution of the present invention is described in detail above, it is only provided as an example, is not intended as the present invention
Application limitation.The equivalent substitution of all operating conditions, is within the scope of the present invention.
Claims (4)
1. a kind of method for preparing constant tilt angle silicon nanowire structure, by the Wafer Cleaning of nano thread structure to be prepared
After be placed in corrosive liquid, then take out and cleaned with deionized water, it is characterised in that：Shown silicon chip is p-type [111] crystal orientation；Corrosion
The formula of liquid is following components and levels：Hydrofluoric acid 2.3-4.6mol/L, silver nitrate 0.015-0.05mol/L；During corrosion
Between be 15-30 minute, corrosive liquid temperature be 90-100 degrees Celsius.
2. according to the method described in claim 1, it is characterised in that：Described hydrofluoric acid concentration is preferably 4.4-4.6mol/L,
Silver nitrate concentration is preferably 0.02-0.03mol/L.
3. according to the method described in claim 1, it is characterised in that：The etching time is 28-30 minutes.
4. according to the method described in claim 1, it is characterised in that：The corrosion temperature is 98-100 degrees Celsius.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710252784.0A CN107118774A (en) | 2017-04-11 | 2017-04-11 | A kind of method for preparing constant tilt angle silicon nanowire structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710252784.0A CN107118774A (en) | 2017-04-11 | 2017-04-11 | A kind of method for preparing constant tilt angle silicon nanowire structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107118774A true CN107118774A (en) | 2017-09-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710252784.0A Pending CN107118774A (en) | 2017-04-11 | 2017-04-11 | A kind of method for preparing constant tilt angle silicon nanowire structure |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102040192A (en) * | 2009-10-20 | 2011-05-04 | 中国科学院理化技术研究所 | Preparation method of orderly-arranged bent silicon nanowire array |
| CN102079506A (en) * | 2009-11-30 | 2011-06-01 | 中国科学院理化技术研究所 | Preparation method of bent silicon nanowire array with changeable direction |
| CN102126724A (en) * | 2011-03-31 | 2011-07-20 | 上海交通大学 | Method for preparing silicon nanowire array with smooth surface |
| CN102231450A (en) * | 2011-04-26 | 2011-11-02 | 北京理工大学 | Autobias photoelectrochemical cell based on p-type silicon photocathode, and preparation method thereof |
| CN102351140A (en) * | 2011-07-06 | 2012-02-15 | 东南大学 | Preparation method of growth-controllable silicon nanowire sensor |
| CN102694075A (en) * | 2012-06-12 | 2012-09-26 | 东华大学 | Method of preparing inclined silicon nanowire array in electric field |
| CN103337455A (en) * | 2013-06-13 | 2013-10-02 | 浙江大学 | Preparation method of Si nanowire arrays |
| CN104649273A (en) * | 2013-11-25 | 2015-05-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of low-doped porous P-type silicon nanowire |
| CN106409653A (en) * | 2016-03-31 | 2017-02-15 | 兰州大学 | Silicon nanowire array preparation method |
-
2017
- 2017-04-11 CN CN201710252784.0A patent/CN107118774A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102040192A (en) * | 2009-10-20 | 2011-05-04 | 中国科学院理化技术研究所 | Preparation method of orderly-arranged bent silicon nanowire array |
| CN102079506A (en) * | 2009-11-30 | 2011-06-01 | 中国科学院理化技术研究所 | Preparation method of bent silicon nanowire array with changeable direction |
| CN102126724A (en) * | 2011-03-31 | 2011-07-20 | 上海交通大学 | Method for preparing silicon nanowire array with smooth surface |
| CN102231450A (en) * | 2011-04-26 | 2011-11-02 | 北京理工大学 | Autobias photoelectrochemical cell based on p-type silicon photocathode, and preparation method thereof |
| CN102351140A (en) * | 2011-07-06 | 2012-02-15 | 东南大学 | Preparation method of growth-controllable silicon nanowire sensor |
| CN102694075A (en) * | 2012-06-12 | 2012-09-26 | 东华大学 | Method of preparing inclined silicon nanowire array in electric field |
| CN103337455A (en) * | 2013-06-13 | 2013-10-02 | 浙江大学 | Preparation method of Si nanowire arrays |
| CN104649273A (en) * | 2013-11-25 | 2015-05-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of low-doped porous P-type silicon nanowire |
| CN106409653A (en) * | 2016-03-31 | 2017-02-15 | 兰州大学 | Silicon nanowire array preparation method |
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