CN112366232B - Heterojunction solar cell and preparation method and application thereof - Google Patents

Heterojunction solar cell and preparation method and application thereof Download PDF

Info

Publication number
CN112366232B
CN112366232B CN202011130523.XA CN202011130523A CN112366232B CN 112366232 B CN112366232 B CN 112366232B CN 202011130523 A CN202011130523 A CN 202011130523A CN 112366232 B CN112366232 B CN 112366232B
Authority
CN
China
Prior art keywords
tco
film
amorphous silicon
film layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011130523.XA
Other languages
Chinese (zh)
Other versions
CN112366232A (en
Inventor
陈明飞
刘永成
江长久
陈明高
徐胜利
王志杰
郭梓旋
莫国仁
李跃辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Enam Optoelectronic Material Co ltd
Original Assignee
Enam Optoelectronic Material Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enam Optoelectronic Material Co ltd filed Critical Enam Optoelectronic Material Co ltd
Priority to CN202011130523.XA priority Critical patent/CN112366232B/en
Publication of CN112366232A publication Critical patent/CN112366232A/en
Application granted granted Critical
Publication of CN112366232B publication Critical patent/CN112366232B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a heterojunction solar cell and a preparation method and application thereof, and the heterojunction solar cell comprises a TCO-I film layer, an N-type amorphous silicon layer, a first intrinsic amorphous silicon layer, an N-type substrate, a second intrinsic amorphous silicon layer, a P-type amorphous silicon layer and a TCO-II film layer which are sequentially stacked; wherein the thickness of the TCO-I film layer is less than that of the TCO-II film layer. The heterojunction solar cell with the structure can realize better cell conversion efficiency by optimizing the film thickness of TCO on the front side and the back side on the premise of not increasing the silver consumption.

Description

Heterojunction solar cell and preparation method and application thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a heterojunction solar cell and a preparation method and application thereof.
Background
Solar cells, also known as "solar chips" or "photovoltaic cells", are semiconductor sheets made of the photovoltaic properties of a particular material. The working principle is as follows: black bodies (e.g., the sun) emit electromagnetic waves (e.g., infrared, ultraviolet, visible, etc.) of different wavelengths, and when these electromagnetic waves impinge on different conductors or semiconductors, photons interact with free electrons in the conductors or semiconductors to generate electric current. The solar cell power generation is a reproducible environment-friendly power generation mode, and greenhouse gases such as carbon dioxide and the like are not generated in the power generation process, so that the environment is not polluted, and the solar cell power generation has a wide application prospect.
Solar cells can be classified into silicon-based semiconductor cells, cdTe thin film cells, copper indium gallium tin (CIGS) thin film cells, dye-sensitized thin film cells, organic material cells, and the like, according to the fabrication materials. Among them, heterojunction cells (HIT) in silicon-based semiconductor cells are receiving more and more attention due to their advantages such as high efficiency conversion and double-sided power generation, and become one of the most likely technologies for large-scale application in the future. The HIT is a cell structure which adds a layer of non-doped (intrinsic) hydrogenated amorphous silicon thin film between P-type hydrogenated amorphous silicon and N-type hydrogenated amorphous silicon and an N-type substrate. The standard crystalline silicon solar cell is a homojunction cell, i.e. a PN junction is formed on the same semiconductor material. It has been found, however, that the conversion efficiency of a heterojunction cell using PN junctions made of different semiconductor materials can be significantly improved.
A typical structure of a heterojunction HIT solar cell in the prior art is shown in figure 1, an N-type monocrystalline silicon wafer is taken as an N-type substrate 1, and a first intrinsic amorphous silicon layer 21 (i-a-Si: H thin film) and an N-type amorphous silicon layer 22 (N-a-Si: H thin film) are sequentially deposited on the front surface of N-type c-Si subjected to cleaning and texturing, so that a p-N heterojunction is formed. A back surface field is formed on the back surface of the silicon wafer by a second intrinsic amorphous silicon layer 31 (i-a-Si: H film) and a P-type amorphous silicon layer 32 (P-a-Si: H film) in sequence. And depositing Transparent Conductive Oxide (TCO) films (forming a TCO-I film layer 23 and a TCO-II film layer 33 respectively) on two sides of the film doped with the a-Si and the H, and finally forming metal collecting electrodes on the top layers of the two sides by a screen printing technology. Since the hole conduction effect of the P-pole is poor, the thickness or height of the silver is usually increased to increase the conductivity for better current collection and conduction, but this leads to an increase in cost.
At present, the annual improvement range of the conversion efficiency of mass-produced HIT heterojunction solar cells is extremely limited, so that the improvement of 0.01 percent of the conversion efficiency is a remarkable progress. However, every 0.01% improvement in conversion efficiency still produces a great economic value for industrial application of solar cells, and thus researchers are still improving conversion efficiency.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. To this end, the present invention proposes a heterojunction solar cell that improves the conversion efficiency of the cell without increasing the back side silver by improving the transparent conductive oxide thin film structure of the heterojunction solar cell.
The invention also provides a preparation method of the battery.
The invention also provides an application of the battery.
The heterojunction solar cell comprises a TCO-I film layer, an N-type amorphous silicon layer, a first intrinsic amorphous silicon layer, an N-type substrate, a second intrinsic amorphous silicon layer, a P-type amorphous silicon layer and a TCO-II film layer which are sequentially stacked;
wherein the thickness of the TCO-I film layer is less than that of the TCO-II film layer.
According to some embodiments of the invention, the thickness of the TCO-I film layer is at least 10nm less than the thickness of the TCO-II film layer.
According to some embodiments of the invention, the TCO-I film may be a single layer of the same material or a stack of layers of different materials. Preferably, the thickness of the TCO-I film layer is 85 to 95nm, and more preferably 90 to 95nm.
According to some embodiments of the present invention, the TCO-II film may be a single layer of the same material or a stack of layers of different materials. Preferably, the total thickness of the TCO-II film layer is 100 to 130nm. According to some embodiments of the invention, the heterojunction solar cell further comprises metal electrodes respectively disposed on the surfaces of the TCO-I film layer and the TCO-II film layer.
The heterojunction solar cell according to the embodiment of the invention has at least the following beneficial effects:
according to the invention, the film thickness of the front TCO film is reduced, and the film thickness of the back TCO film is increased to obtain the luminous flux of the increased front so as to compensate the back luminous flux loss, and the correspondingly increased luminous flux is greater than the back luminous flux loss of the backlight because the front is a light facing surface; meanwhile, as the hole mobility of the back surface is smaller than the electron mobility of the front surface, the converted holes are led out and transferred in time, so that the photo-generated exciton recombination is avoided, and the conversion efficiency of the cell can be effectively improved; according to the invention, the film thickness of the back TCO is increased to improve the derivation of holes, and the electron mobility is usually 2.5 times of the hole mobility, so that the increased hole derivation can avoid the probability that the holes cannot be timely derived and are combined with electrons, and the photoelectric conversion efficiency is increased on the premise of not increasing the silver consumption.
The preparation method according to the second aspect embodiment of the present invention comprises the steps of:
s1, taking the textured N-type substrate, and sequentially forming a first intrinsic amorphous silicon layer and an N-type amorphous silicon layer on one side from inside to outside and a second intrinsic amorphous silicon layer and a P-type amorphous silicon layer on the other side from inside to outside by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method;
s2, sequentially forming TCO-I film layers on the surfaces of the N-type amorphous silicon layers, and sequentially forming TCO-II film layers on the surfaces of the P-type amorphous silicon layers.
The preparation method according to the embodiment of the invention has at least the following beneficial effects: the preparation method of the scheme of the invention is simple and convenient to operate and is suitable for large-scale industrial application.
According to an application of the embodiment of the third aspect of the present invention, a power generation system comprises the above-mentioned heterojunction solar cell.
The application of the embodiment of the invention has at least the following beneficial effects: the solar cell provided by the embodiment of the invention has high energy conversion efficiency and good application prospect.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic diagram of a solar cell in the prior art;
description of reference numerals:
1. an N-type substrate;
21. a first intrinsic amorphous silicon layer; 22. an N-type amorphous silicon layer; 23. a TCO-I film layer;
31. a second intrinsic amorphous silicon layer; 32. a P-type amorphous silicon layer; 33. a TCO-II film layer;
4. and a metal electrode.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments. The parameters in the examples and comparative examples of the present invention, which are not specifically described, are set according to the conventional parameters in the art, and are at the same level. Except for controlling the thickness difference, the operation steps of the embodiment and the comparative example refer to the prior art preparation process, namely, the blue film after being plated with the amorphous silicon thin film by texturing and PECVD is the process that the textured N-type substrate (silicon substrate) prepared by the conventional process under the same condition is sequentially provided with a first intrinsic amorphous silicon layer (i-a-Si: H thin film) and an N-type amorphous silicon layer (N-a-Si: H thin film) from inside to outside on one side and a second intrinsic amorphous silicon layer (i-a-Si: H thin film) and a P-type amorphous silicon layer (P-a-Si: H thin film) from inside to outside on the other side by a Plasma Enhanced Chemical Vapor Deposition (PECVD). Transparent Conductive Oxide (TCO) films are deposited on two sides of the film doped with the a-Si and the H (TCO-I film and TCO-II film are respectively formed).
The scheme of the invention designs the thicknesses of the positive and negative surface film layers of the heterojunction battery, and specifically comprises the following steps:
the positive N pole is electron migration, the back P pole is hole migration, the electron mobility is usually 2.5 times of the hole mobility, if photogenerated holes cannot be led out in time, the holes and electrons can be compounded to influence the photoelectric conversion efficiency, a metal silver electrode on the back is usually thickened or widened in the prior art, the metal silver consumption can be increased, the cost can be increased, and meanwhile, the widening can influence the light flux on the back. According to the invention, the TCO film layer on the front side is thinned, so that the luminous flux is increased, the TCO film on the back side is thickened, so that the hole leading-out is improved, and the hole leading-out is improved without increasing the thickness or the width of the metal electrode on the back side, so that the conversion efficiency of the cell is comprehensively improved.
The ITO (90 2 O 3 :SnO 2 Indium Tin Oxide (ITO) in a ratio of 90 mass% to 10 mass%.
ITO (99 2 O 3 :SnO 2 99 percent to 1 percent of Indium Tin Oxide (ITO) in percentage by mass.
IZO is Indium Zinc Oxide (Indium Zinc Oxide).
The IZrO is Indium zirconium Oxide (Indium Zinc Oxide).
Example 1
Selecting a blue film subjected to texturing and PECVD amorphous silicon film plating, plating TCO-I, TCO-II on two sides respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein the TCO-I is IZO and the thickness of the film is 95nm; TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as a reference (the same is shown below), and the percent conversion efficiency of the cell sheet is 23.30.
Example 2
Selecting a blue film subjected to texturing and PECVD amorphous silicon film plating, plating TCO-I, TCO-II on two sides respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein the TCO-I is IZO and the thickness of the film is 90nm; TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as reference (the same below), and the percent conversion efficiency of the cell sheets is 23.35.
Example 3
Selecting a blue film subjected to texturing and PECVD (plasma enhanced chemical vapor deposition) amorphous silicon film plating, plating TCO-I, TCO-II on two sides respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein the TCO-I is IZO and the thickness of the film is 90nm; TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as reference (the same below), and the percent conversion efficiency of the cell sheets is 23.43.
Example 4
Selecting a blue film subjected to texturing and PECVD (plasma enhanced chemical vapor deposition) amorphous silicon film plating, plating TCO-I, TCO-II on two sides respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein the TCO-I is IZO and the thickness of the film is 90nm; TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as reference (the same below), and the percent conversion efficiency of the cell sheets is 23.50.
Example 5
Selecting a blue film subjected to texturing and PECVD amorphous silicon film plating, plating TCO-I, TCO-II on two sides respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein the TCO-I is IZO and the thickness of the film is 85nm; TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as reference (the same below), and the percent conversion efficiency of the cell sheets is 23.45.
Examples 6-10, corresponding to examples 1-5, differ in that the TCO-I material of examples 1-5 was prepared by replacing IZO with IZO.
Examples 11 to 15 correspond to examples 1 to 5 except that the material for preparing TCO-I in examples 1 to 5 was changed from IZO to ITO (99.
Example 16
Selecting a blue film subjected to texturing and PECVD (plasma enhanced chemical vapor deposition) plating of an amorphous silicon film, plating TCO-I, TCO-II on two sides respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein the TCO-I is an IZO and IZO laminated film layer, firstly plating an IZO film layer on the blue film with the thickness of 45nm, and then plating an IZO film layer with the same thickness on the IZO film layer to form a laminated film layer; TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as a reference (the same is shown below), and the percent conversion efficiency of the cell sheet is 23.29.
Example 17
Selecting a blue film subjected to texturing and PECVD (plasma enhanced chemical vapor deposition) and plated with an amorphous silicon thin film, plating TCO-I, TCO-II on two sides respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein TCO-I is an IZO (indium tin oxide), IZO (indium zirconium oxide) and ITO (99); TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as comparison (the same below), and the percent conversion efficiency of the cell sheets is 23.27 after the test.
Comparative example 1
Selecting a blue film subjected to texturing and PECVD amorphous silicon film plating, plating TCO-I, TCO-II on two sides respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein the TCO-I is IZO and the thickness of the film is 100nm; TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as reference (the same below), and the percent conversion efficiency of the cell sheets is 23.24.
Comparative example 2
Selecting a blue film subjected to texturing and amorphous silicon film PECVD plating, performing double-sided plating on TCO-I, TCO-II respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein TCO-I is IZO, and the thickness of the film is 100nm; TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as comparison (the same below), and the percent conversion efficiency of the cell sheets is 23.18.
Comparative example 3
Selecting a blue film subjected to texturing and amorphous silicon film PECVD plating, performing double-sided plating of TCO-I, TCO-II respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein TCO-I is ITO (99); TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as comparison (the same below), and the percent conversion efficiency of the cell sheets is 23.14.
Comparative example 4
Selecting a blue film subjected to texturing and PECVD (plasma enhanced chemical vapor deposition) amorphous silicon film plating, plating TCO-I, TCO-II on two sides respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein the TCO-I is IZO and the film thickness is 100nm; TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as comparison (the same below), and the percent conversion efficiency of the cell sheets is 22.90.
Comparative example 5
Selecting a blue film subjected to texturing and PECVD amorphous silicon film plating, plating TCO-I, TCO-II on two sides respectively, and arranging metal silver electrodes on the surfaces of TCO-I and TCO-II, wherein the TCO-I is IZO and the thickness of the film is 120nm; TCO-II is ITO (90; the test is carried out by adopting a steady state light source method under the STC condition, standard sheets of China national measurement institute are used as comparison (the same below), and the percent conversion efficiency of the cell sheets is 22.71.
The data summarizing the above examples and comparative examples are shown in table 1 below:
TABLE 1
Figure 372036DEST_PATH_IMAGE001
The unit of film thickness in the table is nm, and in the process of testing conversion efficiency, a steady state light source method under the STC condition is adopted for testing, and standard sheets of China national measurement institute are used as reference.
From table 1, the following information can be seen:
as can be seen from the data of examples 1-5 and comparative example 1, the TCO-I is made of IZO, the TCO-II is ITO (90. In example 1, TCO-I is 95nm, TCO-2 is 100nm, the thickness of TCO-I is reduced to 95nm compared with that of comparative example 1, the thickness of the TCO-I film layer in example 1 is 5nm smaller than that of the TCO-II film layer, and the conversion rate of the cell piece is 23.30%. In example 2, the thickness of the TCO-I film layer is further reduced to 90nm and 100nm, the thickness of the TCO-II film layer is 10nm smaller than that of the TCO-II film layer, and the conversion rate of the cell is increased to 23.35%. In example 3, the thickness of the TCO-II film is further increased by 110nm, and the thickness of the TCO-I film is 20nm less than that of the TCO-II film, so that the conversion efficiency is further improved to 23.43%. In example 4, the thickness of the TCO-II film is further increased by 120nm, and at the moment, the thickness of the TCO-I film is 30nm smaller than that of the TCO-II film, so that the conversion efficiency is further improved to 23.50%. In example 5, the TCO-I is further thinned to 85nm, the TCO-II is further thickened to 130nm, the conversion rate of the cell is 23.45%, and the conversion rate is reduced compared with that of example 3, which shows that the effect of further improving the conversion rate by thinning the TCO-I film layer and thickening the TCO-II film layer is not obvious. Probably, when the thickness of the TCO-I film layer is less than 90nm, the reflection of the front film layer to incident light is enhanced, so that light loss is caused, and finally, the cell cannot be further improved, but the conversion rate is reduced.
Therefore, higher light transmittance can be obtained by reducing the thickness of the front TCO film, while the resistance of the back TCO film can be reduced by increasing the thickness of the back TCO film, so that the increase of the light flux of the front can be obtained, and the loss of the light flux of the back can be compensated. Because the front side is a light facing side, the increased luminous flux is greater than the loss of the corresponding luminous flux of the back side of the backlight; meanwhile, the film thickness of the back TCO is increased to improve the derivation of holes, and the electron mobility is usually 2.5 times of the hole mobility, so that the increased holes are effectively derived in time, the probability of recombination of the holes and electrons is avoided, and the conversion efficiency of the cell is improved on the whole. On the premise of not increasing the silver consumption, the film thickness of TCO on the front side and the back side is optimized, so that the better cell conversion efficiency is realized.
Examples 6-10 and comparative example 2, when TCO-I was prepared as IZrO, there was a similar phenomenon corresponding to the case when TCO was prepared as IZO.
Examples 11-15 and comparative example 3, when the TCO-I prepared material was ITO (99.
In example 16, the TCO-I is a laminated film, the TCO-I film layer is formed by sequentially plating a 45nm IZO film layer and a 45nm IZOZ film layer, the total thickness is 90nm, the TCO-II is ITO (90). Compared with the average value of the conversion rate of the single-layer film layer with the same thickness of the front-back surface film layer of the comparative examples 1 and 2, namely (23.24% + 23.18%)/2 = 23.21%), the improvement is smaller than that of the example 2 with the single-layer film layer of the TCO-I. Mainly, the number of layers of the film layer is increased, which results in the increase of the resistance of the total film layer and the loss of incident light, and the loss of the comprehensive conversion rate.
In example 17, when the TCO-I is a laminated film, the TCO-I film layer was sequentially formed by coating a 30nm IZO film layer, a 30nm IZrO film layer, and a 30nm ITO (99). The cell conversion ratio was 23.20. There is an increase with respect to the average value of the film conversion of comparative example 1, comparative example 2 and comparative example 3, i.e., (23.24% +23.18% + 23.14%)/3 = 23.193%), but the magnitude of the increase is smaller than that of example 2 where TCO-I is a single layer film. Mainly, the number of layers of the film layer is increased, which results in the increase of the resistance of the total film layer and the loss of incident light, and the loss of the comprehensive conversion rate.
Comparative example 4 and example 2
Comparative example 4 is a film having a thickness of 90nm when TCO-I was IZO, the film thickness was 100nm, TCO-II was ITO (90. Compared with the TCO-II film layer in the embodiment 2, the TCO-I film layer is thicker than the TCO-II film layer, and the conversion rate of the cell sheet is reduced to 22.90% compared with 23.35% in the embodiment 2. The TCO-I film layer of the comparative example 4 is thicker than that of the example 2, so that the front luminous flux is reduced, meanwhile, the TCO-II film layer of the comparative example 4 is thinner than that of the TCO-I film layer, holes on the back side of the cell cannot be effectively led out in time, so that the holes and electrons are compounded, and finally, the conversion efficiency of the cell is reduced.
Example 5, the TCO-I film layer was further thickened relative to comparative example 4, resulting in further reduction of front side luminous flux and ultimately in further reduction of conversion efficiency of the cell sheet.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.

Claims (4)

1. A heterojunction solar cell, characterized in that: comprises a TCO-I film layer, an N-type amorphous silicon layer, a first intrinsic amorphous silicon layer, an N-type substrate, and a second intrinsic amorphous silicon layerThe layer, the P-type amorphous silicon layer and the TCO-II film layer; wherein the thickness of the TCO-I film layer is less than that of the TCO-II film layer; the preparation material of the TCO-I film layer is In 2 O 3 :SnO 2 The components of the indium tin oxide comprise 99 percent to 1 percent of indium tin oxide in percentage by mass; the preparation material of the TCO-II film layer is In 2 O 3 :SnO 2 The component ratio is 90% to 10% indium tin oxide by mass percent; the thickness of the TCO-I film layer is 85-95nm; the thickness of the TCO-II film layer is 100-130nm; the thickness of the TCO-I film layer is at least 10nm smaller than that of the TCO-II film layer.
2. The heterojunction solar cell of claim 1, wherein: the heterojunction solar cell further comprises metal electrodes respectively arranged on the surfaces of the TCO-I film layer and the TCO-II film layer.
3. A method of fabricating the heterojunction solar cell of claim 1, wherein: the method comprises the following steps:
s1, taking the textured N-type substrate, and sequentially forming a first intrinsic amorphous silicon layer and an N-type amorphous silicon layer from inside to outside on one side of the textured N-type substrate through PECVD (plasma enhanced chemical vapor deposition), and sequentially forming a second intrinsic amorphous silicon layer and a P-type amorphous silicon layer from inside to outside on the other side of the textured N-type substrate;
s2, sequentially forming TCO-I film layers on the surfaces of the N-type amorphous silicon layers, and sequentially forming TCO-II film layers on the surfaces of the P-type amorphous silicon layers.
4. A power generation system, characterized by: the power generation system comprises the heterojunction solar cell of claim 1.
CN202011130523.XA 2020-10-21 2020-10-21 Heterojunction solar cell and preparation method and application thereof Active CN112366232B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011130523.XA CN112366232B (en) 2020-10-21 2020-10-21 Heterojunction solar cell and preparation method and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011130523.XA CN112366232B (en) 2020-10-21 2020-10-21 Heterojunction solar cell and preparation method and application thereof

Publications (2)

Publication Number Publication Date
CN112366232A CN112366232A (en) 2021-02-12
CN112366232B true CN112366232B (en) 2022-12-02

Family

ID=74511358

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011130523.XA Active CN112366232B (en) 2020-10-21 2020-10-21 Heterojunction solar cell and preparation method and application thereof

Country Status (1)

Country Link
CN (1) CN112366232B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102782881A (en) * 2009-09-18 2012-11-14 欧瑞康太阳能股份公司(特吕巴赫) High-efficiency amorphous silicon photovoltaic devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4152197B2 (en) * 2003-01-16 2008-09-17 三洋電機株式会社 Photovoltaic device
US20140261660A1 (en) * 2013-03-13 2014-09-18 Intermolecular , Inc. TCOs for Heterojunction Solar Cells
JP2015073057A (en) * 2013-10-04 2015-04-16 長州産業株式会社 Photovoltaic element
CN106449850B (en) * 2015-08-05 2018-07-13 钧石(中国)能源有限公司 A kind of efficient silicon based hetero-junction double-side cell and preparation method thereof
KR101821394B1 (en) * 2016-01-14 2018-01-23 엘지전자 주식회사 Solar cell
CN205863192U (en) * 2016-07-22 2017-01-04 研创应用材料（赣州）股份有限公司 A kind of silicon based hetero-junction solaode using double TCO film layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102782881A (en) * 2009-09-18 2012-11-14 欧瑞康太阳能股份公司(特吕巴赫) High-efficiency amorphous silicon photovoltaic devices

Also Published As

Publication number Publication date
CN112366232A (en) 2021-02-12

Similar Documents

Publication Publication Date Title
CN109004053B (en) Crystalline silicon/thin film silicon heterojunction solar cell with double-sided light receiving function and manufacturing method thereof
US10084107B2 (en) Transparent conducting oxide for photovoltaic devices
CN109461780B (en) High-efficiency crystalline silicon heterojunction solar cell electrode structure with high matching degree and preparation method thereof
WO2015066991A1 (en) C-si-based compound heterojunction solar cell
CN111403519A (en) Self-packaging laminated photoelectric device and preparation method thereof
CN110416328A (en) A kind of HJT battery and preparation method thereof
CN112103392A (en) Composite hole transport layer and perovskite solar cell comprising same
CN207282509U (en) The crystalline silicon of double-side photic/film silicon heterojunction solar battery
CN202405277U (en) Thin film solar device employing strained AZO layer on anode - absorbent interface
CN111384187A (en) Composite back electrode, preparation method thereof and laminated solar cell
CN101393942B (en) Polycrystalline-silicon carbide lamination thin-film solar cell
CN112216747B (en) Heterojunction solar cell and preparation method and application thereof
CN217719655U (en) Perovskite/crystalline silicon tandem cell structure
CN114335348B (en) PN heterojunction antimony selenide/perovskite solar cell and preparation method thereof
CN112366232B (en) Heterojunction solar cell and preparation method and application thereof
CN112701194B (en) Preparation method of heterojunction solar cell
CN214176064U (en) Double-sided incident laminated solar cell
CN115172602A (en) Doped metal oxide composite layer structure
CN210156405U (en) Heterojunction cell structure with hydrogen annealed TCO conductive film
CN211238272U (en) Crystalline silicon/amorphous silicon heterojunction battery
CN210156386U (en) Heterojunction battery structure of gradient laminated TCO conductive film
CN113964228B (en) Heterojunction solar cell and preparation method and application thereof
CN114171632A (en) Heterojunction solar cell and photovoltaic module
CN111180593A (en) Silicon-based double-sided organic/inorganic heterojunction solar cell and preparation method thereof
CN211480087U (en) Silicon-based double-sided organic/inorganic heterojunction solar cell

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant