CN214176064U

CN214176064U - Double-sided incident laminated solar cell

Info

Publication number: CN214176064U
Application number: CN202021882781.9U
Authority: CN
Inventors: 袁晨辰; 牛欢欢; 陈伟中; 汪荣峰; 范利生; 陈加坡; 范斌; 田清勇
Original assignee: Suzhou Gcl Nanometer Technology Co ltd; Kunshan Gcl Photoelectric Materials Co ltd
Current assignee: Kunshan GCL photoelectric materials Co.,Ltd.
Priority date: 2020-09-02
Filing date: 2020-09-02
Publication date: 2021-09-10
Anticipated expiration: 2030-09-02

Abstract

The utility model discloses a two-sided incident tandem solar cell. The double-sided incident tandem solar cell comprises a first perovskite cell, a Si cell and a second perovskite cell which are sequentially stacked along a set direction. The utility model provides a double-sided incidence tandem solar cell, which well matches the middle Si cell with the bipolar perovskite solar cell to obtain the triple-junction perovskite-Si-perovskite double-sided incidence solar cell so as to obtain better sunlight utilization efficiency; meanwhile, due to the longer carrier diffusion length and the better weak light absorption performance of the perovskite, the thickness of the perovskite on the back plate is controlled so as to achieve the purpose of not influencing the current collection on the weak light side, so that the current of the whole device is convenient to adjust, and the obtained whole device has higher efficiency.

Description

Double-sided incident laminated solar cell

Technical Field

The utility model belongs to the technical field of photovoltaic module makes, concretely relates to two-sided incident tandem solar cell.

Background

Perovskite solar cells are the most promising solar cells and the research hotspots due to the outstanding advantages of high photoelectric conversion efficiency, low cost, simple manufacture and the like. The perovskite absorption layer with wide band gap is very favorable for forming a double-junction battery with the crystalline silicon solar battery, and has high photoelectric conversion efficiency and better stability than a perovskite single-junction battery.

At present, most of the lamination of perovskite and Si batteries is a double-junction lamination battery, one side of the double-junction lamination battery is a conventional incidence surface, the voltage and the current of the double-junction battery are obtained through incidence of perovskite-Si, the other side of the double-junction lamination battery is incidence of a Si surface, and when the double-junction incidence is carried out, larger current and lower open-circuit voltage can be generated, so that the current mismatch in the whole device is caused.

Disclosure of Invention

A primary object of the present invention is to provide a double-sided incident tandem solar cell to overcome the disadvantages of the prior art.

In order to achieve the above object, the embodiment of the present invention adopts a technical solution comprising:

the embodiment of the utility model provides a two-sided incident tandem solar cell, include along setting for first perovskite battery, Si battery and the second perovskite battery that the direction stacks gradually.

Furthermore, the Si battery comprises a first conductive composite layer, an n-Si layer, an i-Si layer, a p-Si layer and a second conductive composite layer which are sequentially arranged along a set direction, and the first conductive composite layer and the second conductive composite layer are respectively combined with a first electron transport layer in the first perovskite battery and a second hole transport layer in the second perovskite battery.

Further, the first conductive composite layer and the second conductive composite layer include an ITO layer or have a doping concentration of 10⁸-10¹⁷/cm³The highly doped composite junction.

Further, first perovskite battery includes first electron transport layer, first perovskite active layer and the first hole transport layer that sets gradually along setting for the direction, first hole transport layer still is connected with first transparent electrode, second perovskite battery includes second electron transport layer, second perovskite active layer and the second hole transport layer that sets gradually along setting for the direction, second electron transport layer still is connected with second transparent electrode.

Still further, the first perovskite cell is disposed on a weak light side of the solar cell, and a thickness of the first perovskite cell is smaller than a thickness of the second perovskite cell.

Furthermore, the surfaces of the first transparent electrode and the second transparent electrode are combined with a grid line electrode structure.

Furthermore, the surface of the second transparent electrode is also provided with an antireflection structure.

Compared with the prior art, the utility model discloses following beneficial effect has:

the utility model discloses double-sided incident tandem solar cell, with the middle Si battery with bipolar perovskite solar cell fine cooperation, obtain triple perovskite-Si-perovskite double-sided incident solar cell to obtain better sunlight utilization efficiency; meanwhile, due to the longer carrier diffusion length and the better weak light absorption performance of the perovskite, the thickness of the perovskite on the back plate is controlled so as to achieve the purpose of not influencing the current collection on the weak light side, so that the current of the whole device is convenient to adjust, and the obtained whole device has higher efficiency.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a schematic structural diagram of a double-sided incident tandem solar cell according to an embodiment of the present disclosure.

Description of reference numerals: 1. the solar cell comprises a first perovskite cell, 11, a first electron transport layer, 12, a first perovskite active layer, 13, a first hole transport layer, 14, a first transparent electrode, 2, a Si cell, 21, a first conductive composite layer, 22, an n-Si layer, an i-Si layer, a p-Si layer, 23, a second conductive composite layer, 3, a second perovskite cell, 31, a second electron transport layer, 32, a second perovskite active layer, 33, a second hole transport layer, 34, a second transparent electrode, 35, a grid line electrode structure, 36 and an antireflection structure.

Detailed Description

The present invention will be more fully understood from the following detailed description, which should be read in conjunction with the accompanying drawings. Detailed embodiments of the present invention are disclosed herein; however, it is to be understood that the disclosed embodiments are merely exemplary of the invention, which may be embodied in various forms. Therefore, specific functional details disclosed herein are not to be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one skilled in the art to variously employ the present invention in virtually any appropriately detailed embodiment.

In view of the fact that the conventional perovskite-Si series tandem solar cell is generally a two-junction tandem cell, it requires that incident light can only be incident from one side of the perovskite, and in practical application, due to reflection conditions such as ground, light can also be incident through the back, and meanwhile, due to the back incidence in practical application, the current incident on the back of the Si is large due to the narrow band gap device, which affects the performance of the whole device. The inventor of the present application has long studied and practiced in a large number of times, can put forward the technical scheme of the utility model, adjust the electric current that produces through semitransparent and bipolar perovskite solar cell in back low light incidence department, reach that whole device electric current is the same, simultaneously because the effect of three knot tandem cells obtains higher open circuit voltage. The technical solution, its implementation and principles, etc. will be further explained as follows.

Example 1

Referring to fig. 1, a double-sided incident tandem solar cell provided in an embodiment of the present invention is composed of a triple-junction tandem thin-film solar cell, including a first perovskite cell 1, a Si cell 2, and a second perovskite cell 3 stacked in sequence along a predetermined direction; the Si battery 2 comprises a first conductive composite layer 21, an n-Si layer, an i-Si layer, a p-Si layer 22 and a second conductive composite layer 23 which are sequentially arranged along a set direction, and the thicknesses of the first conductive composite layer 21 and the second conductive composite layer 23 are 10-50 nm; the first perovskite battery 1 comprises a first electron transport layer 11, a first perovskite active layer 12 and a first hole transport layer 13 which are sequentially arranged along a set direction, the first hole transport layer 13 is further connected with a first transparent electrode 14, the second perovskite battery 3 comprises a second electron transport layer 31, a second perovskite active layer 32 and a second hole transport layer 33 which are sequentially arranged along the set direction, the second electron transport layer 31 is further connected with a second transparent electrode 34, grid line electrode structures 35 are further combined on the surfaces of the first transparent electrode 14 and the second transparent electrode 34, a reflection reducing structure 36 is further arranged on the surface of the second transparent electrode 34, and specifically, the first conductive composite layer 21 and the second conductive composite layer 23 are respectively combined with the first electron transport layer 13 in the first perovskite battery 1 and the second hole transport layer 31 in the second perovskite battery 3; the thickness of the gate line electrode structure 35 is 5-6 μm, and the gate line electrode structure is mainly formed by conductive gate lines, the conductive gate lines may include metal gate lines with a width of 100-300 μm, such as Ag lines, and the pitch of the gate lines is 2-3 mm.

In the embodiment, the first conductive composite layer 21 and the second conductive composite layer 23 are ITO layers, and in specific implementation, the first perovskite cell 1 is disposed on the weak light side of the solar cell, and the thickness of the first perovskite cell 1 is smaller than that of the second perovskite cell 3; wherein, the first transparent electrode 14 and the second transparent electrode 34 comprise IWO layers or ITO layers for collecting electrons, and the thickness of the first transparent electrode 14 and the second transparent electrode 34 is 400-500 nm; the first and second

hole transport layers

13 and 33 may be NiOx: cu, NiOx, Cu₂One of O, CuI, CuSCN, etc., but not limited thereto, and the thickness of the first hole transport layer 13 and the second hole transport layer 33 is 20-30 nm; the first perovskite active layer 12, the second perovskite active layer 32 comprise a component having a bandgap of from 1.5eV to 1.7eV, typically mapbaiybr₃-y，FAxCs1-xPbIyBr₃Y, and the thickness of the first perovskite active layer 12 is 100-200nm, and the thickness of the second perovskite active layer 32 is 400-500 nm; the first electron transport layer 11 and the second electron transport layer 31 may be made of ZnO or SnO₂、TiO₂、Zn₂SnO₄C60, PCBM, PTAA, etc., and the thickness of the first electron transport layer 11 and the second electron transport layer 31 is 30-50 nm.

The implementation method of the double-sided incident tandem solar cell of the embodiment may include: the method comprises the steps of obtaining an electron transport layer and a hole transport layer on two sides of a Si battery through PVD (physical vapor deposition) deposition, depositing a perovskite thin film through a Czochralski method or a vacuum evaporation method, depositing a corresponding hole and electron transport layer on the perovskite thin film, wherein the hole and electron transport layer can be formed through spraying or the PVD method, depositing the electron transport layers on two sides through magnetron sputtering, screen-printing Ag grid lines, and depositing an antireflection layer through the PVD method.

According to the double-sided incident laminated solar cell provided by the embodiment, the intermediate Si cell is well matched with the bipolar perovskite solar cell to obtain the triple-junction perovskite-Si-perovskite double-sided incident solar cell so as to obtain better sunlight utilization efficiency; meanwhile, due to the longer carrier diffusion length and the better weak light absorption performance of the perovskite, the thickness of the perovskite on the back plate is controlled so as to achieve the purpose of not influencing the current collection on the weak light side, so that the current of the whole device is convenient to adjust, and the obtained whole device has higher efficiency.

Example 2

This example is different from example 1 in that the doping concentration is 10⁸-10¹⁷/cm³Instead of an ITO layer, a highly doped composite junction of (A) is used with a perovskite active layer comprising a composition having a band gap of 1.1eV to 1.3eV, such as (FASnI)₃) x(MAPbI₃)_1-xThe formed perovskite cell replaces the first perovskite cell 1, and then a pure triple-junction solar cell is formed.

In the implementation process, the highly doped composite junction can use respectively heavily doped p-type a-Si and n-type a-Si, or p + + Si and SnO₂Alternatively, PEDOT: a PSS layer; further, as the first conductive composite layer 21 and the second conductive composite layer 23, there are provided Au layers having a relatively small thickness of 5 nm.

It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention, and therefore, the protection scope of the present invention should not be limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.

Claims

1. A double-sided incident tandem solar cell is characterized by comprising a first perovskite cell, a Si cell and a second perovskite cell which are sequentially stacked along a set direction.

2. The bifacial incidence tandem solar cell of claim 1, wherein: the Si battery comprises a first conductive composite layer, an n-Si layer, an i-Si layer, a p-Si layer and a second conductive composite layer which are sequentially arranged along a set direction, wherein the first conductive composite layer and the second conductive composite layer are respectively combined with a first electron transmission layer in the first perovskite battery and a second hole transmission layer in the second perovskite battery.

3. The bifacial incidence tandem solar cell of claim 2, wherein: the first conductive composite layer and the second conductive composite layer comprise an ITO layer, an Au layer and PEDOT: PSS layer or highly doped composite junctions.

4. The bifacial incidence tandem solar cell of claim 3, wherein: the high-doped composite junction comprises a channel formed by p-type a-Si and n-type a-Si, p-type Si and SnO₂One of the channels formed.

5. The bifacial incidence tandem solar cell of claim 2, wherein: the thicknesses of the first conductive composite layer and the second conductive composite layer are 10-50 nm.

6. The bifacial incidence tandem solar cell of claim 1, wherein: the first perovskite battery comprises a first electron transport layer, a first perovskite active layer and a first hole transport layer which are sequentially arranged along a set direction, the first hole transport layer is further connected with a first transparent electrode, the second perovskite battery comprises a second electron transport layer, a second perovskite active layer and a second hole transport layer which are sequentially arranged along the set direction, and the second electron transport layer is further connected with a second transparent electrode.

7. The bifacial incidence tandem solar cell of claim 6, wherein: the first perovskite cell is arranged on the weak light side of the solar cell, and the thickness of the first perovskite cell is smaller than that of the second perovskite cell.

8. The bifacial incidence tandem solar cell of claim 7, wherein: the thicknesses of the first hole transport layer and the second hole transport layer are 20-30nm, the thickness of the first perovskite active layer is 100-200nm, the thickness of the second perovskite active layer is 400-500nm, the thicknesses of the first electron transport layer and the second electron transport layer are 30-50nm, and the thicknesses of the first transparent electrode and the second transparent electrode are 400-500 nm.

9. The bifacial incidence tandem solar cell of claim 6, wherein: and grid line electrode structures are combined on the surfaces of the first transparent electrode and the second transparent electrode.

10. The bifacial incidence tandem solar cell of claim 9, wherein: and the surface of the second transparent electrode is also provided with an anti-reflection structure.

11. The double-sided incident tandem solar cell according to claim 9 or 10, wherein: the thickness of the grid line electrode structure is 5-6 mu m, and the light transmittance is 80-95%.