CN102664213A - Solar cell with high photoelectric conversion efficiency and preparation method thereof - Google Patents
Solar cell with high photoelectric conversion efficiency and preparation method thereof Download PDFInfo
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- CN102664213A CN102664213A CN2012101433824A CN201210143382A CN102664213A CN 102664213 A CN102664213 A CN 102664213A CN 2012101433824 A CN2012101433824 A CN 2012101433824A CN 201210143382 A CN201210143382 A CN 201210143382A CN 102664213 A CN102664213 A CN 102664213A
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Abstract
The invention discloses a solar cell with high photoelectric conversion efficiency. The solar cell comprises a transparent insulating substrate, a front electrode layer, a photoelectric conversion layer, a back electrode layer and a reflecting layer which are stacked in sequence from bottom to top, wherein a photoluminescence material layer is arranged on the surface of the transparent insulating substrate and/or between the back electrode layer and the reflecting layer; and the reflecting layer is a metal reflecting layer. A lower conversion luminous material layer is arranged on the upper surface and/or the lower surface of the transparent insulating substrate, and an upper conversion luminous material layer is arranged between the back electrode layer and the reflecting layer, so that long wavelength infrared light and short wavelength ultraviolet light (which cannot be absorbed by the solar cell) in sunlight are converted into available visible light; and therefore, the conversion efficiency of the solar cell is improved, and the reduction of the conversion efficiency of the solar cell and the performance degradation of the cell due to raised temperature of the cell is avoided.
Description
Technical field
The present invention relates to a kind of solar cell and preparation method, relate in particular to a kind of solar cell and preparation method of high-photoelectric transformation efficiency.
Background technology
Along with becoming increasingly conspicuous of energy crisis and problem of environmental pollution; Energy problem needs to be resolved hurrily; Solar energy as a kind of use not to the utmost, inexhaustible clean energy resource caused various countries researchers' attention gradually, solar cell is also used by various countries' broad research as energy conversion apparatus.In the early stage solar cell, crystal silicon solar energy battery is high with conversion efficiency as first generation solar cell, manufacture craft has simply occupied the bigger market share, but factors such as raw material scarcity are restricting further developing of crystal silicon solar energy battery.Second generation thin-film solar cells grows up under this background just, comprises amorphous silicon, microcrystal silicon, CIGS, cadmium telluride and laminate film structure, and at present most popular be silicon-base thin-film battery.Sunlight is a kind of continuous spectrum from short uv light to long-wavelength infrared light; The visible light part can be made full use of by silicon-based film solar cells in the sunlight but have only; For the short uv light of energy much larger than the energy gap of silicon, part energy is by the solar cell utilization and be converted into electric energy, and remaining energy then is converted into the lattice thermal vibration; Under the irradiation of ultraviolet light, conversion efficiency decline and battery performance decline appear in silicon-based film solar cells easily; Be lower than the long-wavelength infrared light of the energy gap of silicon for energy, its energy can not make electronics from forbidden transition to conduction band, these Conversion of energy are heat, and battery temperature is raise, and also can cause the silicon-based film solar cells conversion efficiency to descend.
At present, embedded photoluminescent material is widely used in fields such as laser technology, optical fiber communication technology, fibre amplifier, optical information storage and demonstration.Embedded photoluminescent material comprises up-conversion luminescent material and down-conversion luminescent material, and wherein up-conversion luminescent material is a kind of material that can infrared light be converted to visible light, can under infrared ray excited, send visible light.The photon energy that up-conversion luminescent material absorbs is lower than the photon energy of emission, claims anti-Stokes luminescent material again.So far, up-conversion luminescent material mainly is the solid chemical compound of doping with rare-earth ions, utilizes the metastable energy level characteristic of rare earth element, absorbs a plurality of low-energy long-wave radiations, after conversion, sends the higher shortwave radiation of energy.And down-conversion luminescent material is a kind of material that can ultraviolet light be converted to visible light, can under ultraviolet excitation, can send visible light.Down-conversion luminescent material absorbs high-octane shortwave radiation, launches low-energy long-wave radiation, and down-conversion luminescent material is followed the Stokes law.
Summary of the invention
The solar cell and the preparation method that the purpose of this invention is to provide a kind of high-photoelectric transformation efficiency; Can be with not converted into available visible light by long-wavelength infrared light and the short uv light that solar cell absorbs in the sunlight; Both can improve the conversion efficiency of solar cell, and also can avoid simultaneously causing conversion efficiency of solar cell to descend and the battery performance decline because of battery temperature raises.
The present invention adopts following technical proposals:
A kind of solar cell of high-photoelectric transformation efficiency; Comprise the transparent insulation substrate that stacks gradually from bottom to up, preceding electrode layer, photoelectric conversion layer, dorsum electrode layer and reflector; Be provided with the embedded photoluminescent material layer between described transparent insulation substrate surface and/or dorsum electrode layer and the reflector, the reflector is a metallic reflector.
Described embedded photoluminescent material layer is the rare earth luminescent material layer, and the host material of embedded photoluminescent material is oxide, fluoride, halide or sulfide.
The embedded photoluminescent material layer that described transparent insulation substrate surface is provided with is the down-conversion luminescent material layer, and the embedded photoluminescent material layer that is provided with between dorsum electrode layer and the reflector is the up-conversion luminescent material layer.
The said down-conversion luminescent material layer that is arranged on the transparent insulation substrate surface is positioned at the upper surface and/or the lower surface of transparent insulation substrate.
The reflector of described metallic reflector for adopting silver, aluminium, nickel, titanium or its alloy to constitute, preceding electrode layer and dorsum electrode layer are transparent conductive oxide.
A kind of preparation method of solar battery of high-photoelectric transformation efficiency may further comprise the steps:
A: at the upper surface and/or the lower surface deposition down-conversion luminescent material layer of transparent insulation substrate;
B: if the down-conversion luminescent material layer only is deposited on the lower surface of transparent insulation substrate, electrode layer before then direct upper surface in transparent insulation substrate deposits; If the upper surface of transparent insulation substrate deposits the down-conversion luminescent material layer, electrode layer before then on the down-conversion luminescent material layer, depositing;
C: deposit photoelectric conversion layer after utilizing laser grooving;
D: deposit dorsum electrode layer after utilizing laser grooving, and form the inside solar energy battery cascaded structure after utilizing laser grooving;
E: at dorsum electrode layer deposition up-conversion luminescent material layer;
F: at up-conversion luminescent material laminar surface deposition of reflective layer, the reflector is a metallic reflector.
Up-conversion luminescent material layer in down-conversion luminescent material layer in said A step and the B step and E step and the F step is the rare earth luminescent material layer, and the host material of up-conversion luminescent material and down-conversion luminescent material is oxide, fluoride, halide or sulfide.
Down-conversion luminescent material is deposited upon transparent insulation substrate upper surface and/or lower surface in the said A step.
The method that deposits up-conversion luminescent material in deposition down-conversion luminescent material and the E step in the said A step adopts spraying process, roll coating process, vapour deposition method, sputtering method or chemical vapour deposition technique.
Electrode layer and dorsum electrode layer are transparent conductive oxide before described, the reflector that metallic reflector adopts silver, aluminium, nickel, titanium or its alloy to constitute.
The present invention is through being provided with the down-conversion luminescent material layer at transparent insulation substrate upper surface and/or lower surface; The up-conversion luminescent material layer is set between dorsum electrode layer and the reflector; With not converted into available visible light by long-wavelength infrared light and the short uv light that solar cell absorbs in the sunlight; Both improved the conversion efficiency of solar cell, and also avoided simultaneously causing conversion efficiency of solar cell to descend and the battery performance decline because of battery temperature raises.
Description of drawings
The structural representation of the solar cell of the high-photoelectric transformation efficiency that Fig. 1 processes for embodiment 1;
The structural representation of the solar cell of the high-photoelectric transformation efficiency that Fig. 2 processes for embodiment 2;
The structural representation of the solar cell of the high-photoelectric transformation efficiency that Fig. 3 processes for embodiment 3;
Fig. 4 is the flow chart of the preparation method of solar battery of high-photoelectric transformation efficiency according to the invention.
Embodiment
The solar cell of high-photoelectric transformation efficiency of the present invention comprises the transparent insulation substrate that stacks gradually from bottom to up, preceding electrode layer, photoelectric conversion layer 4, dorsum electrode layer and reflector.Be provided with the embedded photoluminescent material layer between transparent insulation substrate surface and/or dorsum electrode layer and the reflector.The embedded photoluminescent material layer of transparent insulation substrate upper surface and/or lower surface setting is a down-conversion luminescent material layer 2, and the embedded photoluminescent material layer that is provided with between dorsum electrode layer and the reflector is a up-conversion luminescent material layer 6.Described transparent insulation substrate can adopt ultra-white float glass 1, and preceding electrode layer and dorsum electrode layer are transparent conductive oxide; Described down-conversion luminescent material layer 2 is the rare earth luminescent material layer with up-conversion luminescent material layer 6, and the host material of down-conversion luminescent material layer 2 and up-conversion luminescent material layer 6 is oxide, fluoride, halide or sulfide; Described photoelectric conversion layer 4 is the PIN structures that repeatedly formed by p type silicon, intrinsic silicon and n type silicon stack; The metallic reflector of described reflector for adopting silver, aluminium, nickel, titanium or its alloy to constitute.
The solar cell of high-photoelectric transformation efficiency of the present invention in use, photoelectric conversion layer 4 makes full use of the visible light energy in the sunlight and is translated into electric energy.Energy is much larger than the long wavelength ultraviolet light of the energy gap of silicon in the sunlight, absorbed and converts visible light into by down-conversion luminescent material layer 2, and the visible light of launching is absorbed by photoelectric conversion layer 4 and is electric energy with Conversion of energy.Energy is lower than the long-wavelength infrared light of the energy gap of silicon in the sunlight; See through behind the photoelectric conversion layer and to be absorbed by up-conversion luminescent material layer 6 and convert visible light into; The visible light of launching reflexes in the photoelectric conversion layer 4 through the reflector once more, and photoelectric conversion layer 4 absorbs it and is electric energy with Conversion of energy.Therefore; The solar cell of high-photoelectric transformation efficiency of the present invention can convert unabsorbable long-wavelength infrared light and short uv light in the sunlight into available visible light; Both can improve the conversion efficiency of solar cell, and also can avoid simultaneously causing conversion efficiency of solar cell to descend and the battery performance decline because of battery temperature raises.
As shown in Figure 4, the preparation method of solar battery of a kind of high-photoelectric transformation efficiency of the present invention may further comprise the steps:
A: through spraying process, roll coating process, vapour deposition method, sputtering method or chemical vapour deposition technique at transparent insulation substrate surface deposition down-conversion luminescent material layer 2; Down-conversion luminescent material layer 2 can be deposited on the upper surface and/or the lower surface of transparent insulation substrate; Down-conversion luminescent material is the rare earth luminescent material layer, and the host material of down-conversion luminescent material is oxide, fluoride, halide or sulfide;
B:, then utilize directly electrode layer before the upper surface deposition of transparent insulation substrate of chemical vapour deposition technique if down-conversion luminescent material layer 2 only is deposited on the lower surface of transparent insulation substrate; If the upper surface of transparent insulation substrate deposits down-conversion luminescent material layer 2, then utilize chemical vapour deposition technique on down-conversion luminescent material layer 2, to deposit before electrode layer, described before electrode layer be transparent conductive oxide;
C: deposit photoelectric conversion layer 4 after utilizing laser grooving to remove the preceding electrode of part, photoelectric conversion layer 4 is the PIN structures that repeatedly formed by p type silicon, intrinsic silicon and n type silicon stack;
D: laser grooving deposits dorsum electrode layer after removing the part photoelectric conversion layer, and forms the inside solar energy battery cascaded structure after utilizing laser grooving to remove part photoelectric conversion layer 4 and dorsum electrode layer, and dorsum electrode layer is a transparent conductive oxide;
E: through spraying process, roll coating process, vapour deposition method, sputtering method or chemical vapour deposition technique at dorsum electrode layer surface deposition up-conversion luminescent material layer 6; Up-conversion luminescent material is the rare earth luminescent material layer, and the host material of up-conversion luminescent material is oxide, fluoride, halide or sulfide;
F: in up-conversion luminescent material layer 6 surface deposition reflector, the metallic reflector of described reflector for adopting silver, aluminium, nickel, titanium or its alloy to constitute.
Embodiment 1, and is as shown in Figure 1:
1, deposits down-conversion luminescent material layer 2 through spraying process, roll coating process, vapour deposition method, sputtering method or chemical vapour deposition technique at clean ultra-white float glass 1 upper surface; Down-conversion luminescent material is a rare earth luminescent material, and the host material of down-conversion luminescent material is oxide, fluoride, halide or sulfide.
2, utilize chemical vapour deposition technique on down-conversion luminescent material layer 2, to deposit fluorine-doped tin dioxide (FTO) 3, electrode layer before constituting.
3, clean the back and construct the first road cutting with the P1 laser ablation; Remove fluorine-doped tin dioxide (FTO) 3; Put into PECVD equipment after cleaning and the preheating and feed silane, methane, phosphine, borine, hydrogen gas mixture deposition photoelectric conversion layer 4, photoelectric conversion layer 4 is the PIN structures that repeatedly formed by p type silicon, intrinsic silicon and n type silicon stack.
4, carry out P2 laser ablation process after the cooling, remove part photoelectric conversion layer 4 silicon fimls, form the second road groove of parallel P1 cutting.
5, utilize sputtering technology to deposit dorsum electrode layer at battery surface; Dorsum electrode layer is an Al-Doped ZnO (AZO) 5; The battery that has plated dorsum electrode layer is parallel to the P3 laser ablation of P1, P2 cutting, removes silicon fiml and dorsum electrode layer, thereby form the internal series-connection structure of battery.
6, deposit up-conversion luminescent material layer 6 on the dorsum electrode layer surface through spraying process, roll coating process, vapour deposition method, sputtering method or chemical vapour deposition technique; Up-conversion luminescent material is a rare earth luminescent material, and the host material of up-conversion luminescent material is oxide, fluoride, halide or sulfide.
7, at up-conversion luminescent material layer 6 surface deposition metallic reflector aluminium (AL) 7, be used to reflect the visible light that up-conversion luminescent material layer 6 sends.
Embodiment 2, and is as shown in Figure 2:
1, deposits down-conversion luminescent material layer 2 through spraying process, roll coating process, vapour deposition method, sputtering method or chemical vapour deposition technique respectively at clean ultra-white float glass 1 upper surface and lower surface; Down-conversion luminescent material is a rare earth luminescent material, and the host material of down-conversion luminescent material is oxide, fluoride, halide or sulfide.
2, utilize chemical vapour deposition technique on the down-conversion luminescent material layer 2 of ultra-white float glass 1 upper surface deposition, to deposit Al-Doped ZnO (AZO) 5, electrode layer before constituting.
3, clean the back and construct the first road cutting with the P1 laser ablation; Remove Al-Doped ZnO (AZO) 5; Put into PECVD equipment after cleaning and the preheating and feed silane, methane, phosphine, borine, hydrogen gas mixture deposition photoelectric conversion layer 4, photoelectric conversion layer 4 is the PIN structures that repeatedly formed by p type silicon, intrinsic silicon and n type silicon stack.
4, carry out P2 laser ablation process after the cooling, remove part photoelectric conversion layer 4 silicon fimls, form the second road groove of parallel P1 cutting.
5, utilize sputtering technology to deposit dorsum electrode layer at battery surface; Dorsum electrode layer is an Al-Doped ZnO (AZO) 5; The battery that has plated dorsum electrode layer is parallel to the P3 laser ablation of P1, P2 cutting, removes silicon fiml and back electrode, thereby form the internal series-connection structure of battery.
6, deposit up-conversion luminescent material layer 6 on the dorsum electrode layer surface through spraying process, roll coating process, vapour deposition method, sputtering method or chemical vapour deposition technique; Up-conversion luminescent material is a rare earth luminescent material, and the host material of up-conversion luminescent material is oxide, fluoride, halide or sulfide.
7, at up-conversion luminescent material layer 6 surface deposition metallic reflector aluminium (Ag) 8, be used to reflect the visible light that up-conversion luminescent material layer 6 sends.
Embodiment 3, and is as shown in Figure 3:
1, deposits down-conversion luminescent material layer 2 through spraying process, roll coating process, vapour deposition method, sputtering method or chemical vapour deposition technique at clean ultra-white float glass 1 lower surface; Down-conversion luminescent material is a rare earth luminescent material, and the host material of down-conversion luminescent material is oxide, fluoride, halide or sulfide.
2, utilize the upper surface deposition fluorine-doped tin dioxide (FTO) 3 of chemical vapour deposition technique, electrode layer before constituting at ultra-white float glass 1.
3, clean the back and construct the first road cutting with the P1 laser ablation; Remove fluorine-doped tin dioxide (FTO) 3; Put into PECVD equipment after cleaning and the preheating and feed silane, methane, phosphine, borine, hydrogen gas mixture deposition photoelectric conversion layer 4, photoelectric conversion layer 4 is the PIN structures that repeatedly formed by p type silicon, intrinsic silicon and n type silicon stack.
4, carry out P2 laser ablation process after the cooling, remove part photoelectric conversion layer 4 silicon fimls, form the second road groove of parallel P1 cutting.
5, utilize sputtering technology to deposit dorsum electrode layer at battery surface; Dorsum electrode layer is an Al-Doped ZnO (AZO) 5; The battery that has plated dorsum electrode layer is parallel to the P3 laser ablation of P1, P2 cutting, removes silicon fiml and back electrode, thereby form the internal series-connection structure of battery.
6, deposit up-conversion luminescent material layer 6 on dorsum electrode layer 5 surfaces through spraying process, roll coating process, vapour deposition method, sputtering method or chemical vapour deposition technique; Up-conversion luminescent material is a rare earth luminescent material, and the host material of up-conversion luminescent material is oxide, fluoride, halide or sulfide.
7, at up-conversion luminescent material layer 6 surface deposition metallic reflector aluminium (Ag) 8, be used to reflect the visible light that the up-conversion luminescent material layer sends.
Claims (10)
1. the solar cell of a high-photoelectric transformation efficiency; Comprise the transparent insulation substrate that stacks gradually from bottom to up, preceding electrode layer, photoelectric conversion layer, dorsum electrode layer and reflector; It is characterized in that: be provided with the embedded photoluminescent material layer between described transparent insulation substrate surface and/or dorsum electrode layer and the reflector, the reflector is a metallic reflector.
2. the solar cell of high-photoelectric transformation efficiency according to claim 1, it is characterized in that: described embedded photoluminescent material layer is the rare earth luminescent material layer, the host material of embedded photoluminescent material is oxide, fluoride, halide or sulfide.
3. the solar cell of high-photoelectric transformation efficiency according to claim 2; It is characterized in that: the embedded photoluminescent material layer that described transparent insulation substrate surface is provided with is the down-conversion luminescent material layer, and the embedded photoluminescent material layer that is provided with between dorsum electrode layer and the reflector is the up-conversion luminescent material layer.
4. the solar cell of high-photoelectric transformation efficiency according to claim 3 is characterized in that: the said down-conversion luminescent material layer that is arranged on the transparent insulation substrate surface is positioned at the upper surface and/or the lower surface of transparent insulation substrate.
5. the solar cell of high-photoelectric transformation efficiency according to claim 4 is characterized in that: described metallic reflector is for adopting the reflector of silver, aluminium, nickel, titanium or its alloy formation, and preceding electrode layer and dorsum electrode layer are transparent conductive oxide.
6. the preparation method of solar battery of a high-photoelectric transformation efficiency is characterized in that: may further comprise the steps:
A: at the upper surface and/or the lower surface deposition down-conversion luminescent material layer of transparent insulation substrate;
B: if the down-conversion luminescent material layer only is deposited on the lower surface of transparent insulation substrate, electrode layer before then direct upper surface in transparent insulation substrate deposits; If the upper surface of transparent insulation substrate deposits the down-conversion luminescent material layer, electrode layer before then on the down-conversion luminescent material layer, depositing;
C: deposit photoelectric conversion layer after utilizing laser grooving;
D: deposit dorsum electrode layer after utilizing laser grooving, and form the inside solar energy battery cascaded structure after utilizing laser grooving;
E: at dorsum electrode layer deposition up-conversion luminescent material layer;
F: at up-conversion luminescent material laminar surface deposition of reflective layer, the reflector is a metallic reflector.
7. the preparation method of solar battery of high-photoelectric transformation efficiency according to claim 6; It is characterized in that: the up-conversion luminescent material layer in down-conversion luminescent material layer in said A step and the B step and E step and the F step is the rare earth luminescent material layer, and the host material of up-conversion luminescent material and down-conversion luminescent material is oxide, fluoride, halide or sulfide.
8. the preparation method of solar battery of high-photoelectric transformation efficiency according to claim 6, it is characterized in that: down-conversion luminescent material is deposited upon transparent insulation substrate upper surface and/or lower surface in the said A step.
9. the preparation method of solar battery of high-photoelectric transformation efficiency according to claim 6 is characterized in that: the method employing spraying process, roll coating process, vapour deposition method, sputtering method or the chemical vapour deposition technique that deposit up-conversion luminescent material in the said A step in deposition down-conversion luminescent material and the E step.
10. the preparation method of solar battery of high-photoelectric transformation efficiency according to claim 6; It is characterized in that: electrode layer and dorsum electrode layer are transparent conductive oxide before described, the reflector that metallic reflector adopts silver, aluminium, nickel, titanium or its alloy to constitute.
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| CN103346203A (en) * | 2013-05-31 | 2013-10-09 | 浙江正泰太阳能科技有限公司 | Up-conversion solar cell and preparation method thereof |
| CN107369733A (en) * | 2017-09-13 | 2017-11-21 | 苏州福斯特光伏材料有限公司 | A kind of high water resistant light conversion solar cell encapsulating material and preparation method thereof |
| CN109148709A (en) * | 2018-09-04 | 2019-01-04 | 合肥鑫晟光电科技有限公司 | A kind of electroluminescence display panel and display device |
| CN109671847A (en) * | 2018-12-26 | 2019-04-23 | 蜂巢能源科技有限公司 | Perovskite solar battery and preparation method thereof |
| CN111224607A (en) * | 2020-02-24 | 2020-06-02 | 中国电子科技集团公司第四十八研究所 | Photovoltaic power generation system based on thermo-optic effect and application |
| CN116156906A (en) * | 2023-04-21 | 2023-05-23 | 宁德时代新能源科技股份有限公司 | Light conversion layer, solar cell, and electricity using device |
| WO2023221561A1 (en) * | 2022-05-16 | 2023-11-23 | 隆基绿能科技股份有限公司 | Solar cell |
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| CN109148709A (en) * | 2018-09-04 | 2019-01-04 | 合肥鑫晟光电科技有限公司 | A kind of electroluminescence display panel and display device |
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| WO2023221561A1 (en) * | 2022-05-16 | 2023-11-23 | 隆基绿能科技股份有限公司 | Solar cell |
| CN116156906A (en) * | 2023-04-21 | 2023-05-23 | 宁德时代新能源科技股份有限公司 | Light conversion layer, solar cell, and electricity using device |
| CN116156906B (en) * | 2023-04-21 | 2024-03-15 | 宁德时代新能源科技股份有限公司 | Light conversion layer, solar cell, and electricity using device |
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Application publication date: 20120912 |