CN201877447U - Thin film solar battery structure for blocking infrared light - Google Patents
Thin film solar battery structure for blocking infrared light Download PDFInfo
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- CN201877447U CN201877447U CN2010206253256U CN201020625325U CN201877447U CN 201877447 U CN201877447 U CN 201877447U CN 2010206253256 U CN2010206253256 U CN 2010206253256U CN 201020625325 U CN201020625325 U CN 201020625325U CN 201877447 U CN201877447 U CN 201877447U
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Abstract
The utility model relates to a thin film solar battery structure for blocking infrared light, which at least comprises a first semitransparent conductive metal layer, a p-i-n semiconductor layer and a transparent substrate, wherein the first semitransparent conductive metal layer is made of transitional metal or aluminum and has the characteristic of reflecting the infrared light, so that the heat-insulating effect can be achieved; and meanwhile, the resistance can be reduced, so that the utilizing rate can be improved and further the efficiency for conversion can be improved. The utility model also provides a thin film solar battery structure for blocking the infrared light, which at least comprises the first semitransparent conductive metal layer, an n-i-p semiconductor layer and the transparent substrate. By using the thin film solar battery structure, the heat-insulating effect can also be achieved; and meanwhile, the resistance is reduced, so that the utilizing rate can be improved and further the efficiency for conversion can be improved.
Description
Technical field
The utility model relates to a kind of thin-film solar cells composition structure that is used to intercept infrared light, refers to a kind of effective obstruct infrared light especially and has the thin-film solar cells composition structure of high conductivity.
Background technology
Grow up because of the global solar market demand, when the river rises the boat goes up to cause silicon starving, silicon wafer solar cell and module production cost.And advantages such as thin-film solar cells is frivolous because of having, low-cost, deflection, various appearances design become after the silicon wafer solar cell, are considered to the most potential current heliotechnics.
The technology of solar power generation mainly is divided into silicon metal (Wafer base) and film (Thin Film base) solar cell two big classes according to the manufacturing process differentiation.Wherein because of silicon has advantages such as avirulence, oxide are stable, add that the existing mature and stable industrial treatment technology of industrial circle handles silicon materials, therefore, the silicon wafer solar cell is the existing market application mainstream, accounts for the world market and reaches ninety percent approximately.
Yet, since in recent years states such as Germany, Spain under the solar boosted policy implication, powerful the raising of the solar cell module market demand, 2007, the demand of solar cell module heated, once cause the silicon raw material seriously the short supply, price skyrockets.Though since 2008 second half year, left successively because of polysilicon manufacturer production capacity, add that the market demand eases up, impel the silicon cost of material to downgrade gradually, the unsettled experience of silicon cost of material has allowed solar energy manufacturer realize the importance of scattered risks more; Moreover the silicon wafer solar energy industry is low because of equipment and manufacturing process technology maturation, entry threshold, and in numerous competitors' industry, the high gross profit epoch in the past have been difficult to see again, impels solar energy manufacturer to quicken to research and develop feeler turning film area of solar cell.
Thin-film solar cells as its name suggests, is to form to produce photoelectric film on plastic cement, glass or metal substrate, and thickness only needs number μ m, therefore can significantly reduce the consumption of raw material under same light-receiving area than the Silicon Wafer solar cell.Thin-film solar cells is not to be the product of new ideas, in fact, artificial satellite generally adopted the high conversion efficiency thin-film solar cell panel made with GaAs (GaAs) (with monocrystalline silicon as substrate already in the past, conversion usefulness can reach more than 30%) generate electricity, but its cost costliness, be used to the too industry of navigating more, can't popularize now.So present industry main flow adopts amorphous silicon (a-Si) to make the light absorbing zone of thin-film solar cells (being semiconductor layer) more.Thin-film solar cells can be made on cheap glass, plastic cement or stainless steel substrate in a large number, to produce large-area solar cell, and its manufacturing process more can directly import quite ripe TFT-LCD manufacturing process, this is one of its advantage, so industry falls over each other to drop into the research in this field invariably.
Basically, the solar cell manufacturing process of the relative other types of thin-film solar cells is comparatively simple, has that cost is low, the mass producible advantage.With regard to the composition of thin-film solar cell substrate, its basic manufacturing process can be through three layers of deposition (deposition), three road laser scribing (scribe) formalities, as described below: at first, on the glass substrate of subscribing size, plate layer of transparent conductive film (Transparent Conductive Oxide with physical gas-phase deposition (PVD) earlier, TCO), it selects light transmission height and the good material of conductivity, as tin indium oxide (ITO), tin oxide (SnO2) or zinc oxide (ZnO) etc.Then with its preceding electrode pattern (patterning) of infrared laser line definition.So far be first road deposition and line formality.Second stage is the making of main absorbed layer (Active layer), it is generally with plasma-assisted chemical vapour deposition (PlasmaEnhanced Chemical Vapor Deposition, PECVD) technology grows the hydrogenated amorphous silicon structure (p-a-Si:H/i-a-Si:H/n-a-Si:H) of one deck p-i-n type arrangement on electrode surface, and this main absorbed layer is with the agent structure of p-n semiconductor junction (p-n junction) as light absorption and power conversion.Can carry out the laser scribing step equally after this step, be the main absorbed layer define pattern of producing, so far be second road deposition and line formality.Form the back electrode (back contact) of aluminium/silver-colored material at last again based on sputter (sputter) technology thereon, and carry out the 3rd road laser scribing and define its back electrode figure.
So because of using transparency conducting layer in the transparency of visible region, the semiconductor of selected transparency conducting layer must be the semiconductor of wide energy gap, so select for use the energy gap width must be greater than the semiconductor of the transparency conducting layer of visible light energy scope, so increased the integral thickness of thin-film solar cells, and for increasing the conduction property of transparency conducting layer, general mode by the doping trace impurity, promote its conductivity, so technology comparatively bothers, therefore, how effectively to intercept infrared light reaching energy-saving effect, and how to reduce the thin film solar integral thickness and how to improve light transmittance and the efficient of absorptivity and opto-electronic conversion, industry is needed the problem of solution badly for this reason.
Summary of the invention
The purpose of this utility model is to provide a kind of and forms structure in order to the thin-film solar cells that intercepts infrared light, technical problem to be solved is to make it have the characteristic of reflects infrared light by translucent conductive metal layer of the present utility model, and reaches heat insulation effect effectively.
Another purpose of the present utility model is to provide a kind of and forms structure in order to the thin-film solar cells that intercepts infrared light, technical problem to be solved is to make it utilize translucent conductive metal layer to reduce resistance value effectively, to increase conductance, make and to utilize power to rise, thereby improve the efficient of conversion.
A purpose more of the present utility model is to provide a kind of thin-film solar cells composition structure that is used to intercept infrared light, technical problem to be solved is to make it replace existing known nesa coating by translucent conductive metal layer, increase photosphere and penetration length effectively, and the increase reflective character, to increase whole conversion efficiency.
To achieve these goals, according to a kind of thin-film solar cells composition structure that is used to intercept infrared light that the utility model proposes, at least comprise: one first translucent conductive metal layer, characteristic with a reflects infrared light, and the one side of this first translucent conductive metal layer is a shadow surface, in order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion; One p-i-n semiconductor layer, it is formed at this first translucent conductive metal layer below, in order to produce electron hole pair (or be called electronics electricity hole to), photoelectric current to be provided and to increase absorptivity; And a transparency carrier, it is formed at this p-i-n semiconductor layer below.
The utility model thin-film solar cells is formed structure, further comprises one second translucent conductive metal layer, is formed between aforementioned transparency carrier and the p-i-n semiconductor layer.
To achieve these goals, according to the utility model the thin-film solar cells composition structure that another kind is used to intercept infrared light is proposed also, at least comprise: one first translucent conductive metal layer, characteristic with a reflects infrared light, and the one side of this first translucent conductive metal layer is a shadow surface, in order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion; One n-i-p semiconductor layer, it is formed at this first translucent conductive metal layer below, in order to produce electron hole pair, photoelectric current to be provided and to increase absorptivity; And a transparency carrier, it is formed at this n-i-p semiconductor layer below.
The utility model thin-film solar cells is formed structure, further comprises one second translucent conductive metal layer, is formed between aforementioned transparency carrier and the n-i-p semiconductor layer.
The utility model also can be applied to the following technical measures to achieve further.
The aforesaid thin-film solar cells composition structure that is used to intercept infrared light, the material of wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
The aforesaid thin-film solar cells composition structure that is used to intercept infrared light, the wherein said first translucent conductive metal layer and the second translucent conductive metal layer are single transition metal or aluminium; Or described first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them of one first transparent conductive oxide and a transition metal or aluminium; Also or the described first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them and one second transparent conductive oxide of one first transparent conductive oxide, a transition metal or aluminium.
The aforesaid thin-film solar cells composition structure that is used to intercept infrared light, wherein said transition metal is silver or nickel, the thickness of wherein said silver is between 3nm～25nm.
The aforesaid thin-film solar cells composition structure that is used to intercept infrared light, wherein said first transparent conductive oxide and second transparent conductive oxide are zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO).
The utility model compared with prior art has tangible advantage and beneficial effect.By technique scheme, the thin-film solar cells composition structure that is used to intercept infrared light of the present utility model, at least have following advantage: the utility model is used to intercept the thin-film solar cells composition structure of infrared light, the characteristic that has reflects infrared light by translucent conductive metal layer of the present utility model, and reach heat insulation effect effectively, and utilize translucent conductive metal layer to reduce resistance value effectively, to increase conductance, make and to utilize power to rise, thereby improve the efficient of conversion, and by the existing known nesa coating of translucent conductive metal layer replacement, increase photosphere and penetration length effectively, and the increase reflective character is to increase whole conversion efficiency.
Description of drawings
Fig. 1 is the thin-film solar cells composition structure chart that is used to intercept infrared light of the utility model first embodiment.
Fig. 2 is the thin-film solar cells composition structure chart that is used to intercept infrared light of the utility model second embodiment.
Fig. 3 is the thin-film solar cells composition structure chart that is used to intercept infrared light of the utility model the 3rd embodiment.
Fig. 4 is the thin-film solar cells composition structure chart that is used to intercept infrared light of the utility model the 4th embodiment.
Fig. 5 is that thin-film solar cells that the utility model is used to intercept infrared light is formed first of the first translucent conductive metal layer of structure and the second translucent conductive metal layer and implemented structure graph.
Fig. 6 is that thin-film solar cells that the utility model is used to intercept infrared light is formed second of the first translucent conductive metal layer of structure and the second translucent conductive metal layer and implemented structure graph.
Fig. 7 is that thin-film solar cells that the utility model is used to intercept infrared light is formed the 3rd of the first translucent conductive metal layer of structure and the second translucent conductive metal layer and implemented structure graph.
100: thin-film solar cells is formed structure
10,10 ': the first translucent conductive metal layer
20,20 ': the p-i-n semiconductor layer
30,30 ': transparency carrier
40: the second translucent conductive metal layers
50,50 ', 50 ": first transparent conductive oxide
60: the second transparent conductive oxides
70,70 ': the n-i-p semiconductor layer
Embodiment
For further setting forth the utility model is to reach technological means and the effect that predetermined goal of the invention is taked, below in conjunction with accompanying drawing and preferred embodiment, the thin-film solar cells that intercepts infrared light according to being used to of the utility model proposes is formed its embodiment of structure, step, structure, feature and effect thereof describe in detail.
Seeing also Fig. 1, is the thin-film solar cells composition structure chart that is used to intercept infrared light of the utility model first embodiment.The utility model is used to intercept the thin-film solar cells composition structure 100 of infrared light, at least comprise: one first translucent conductive metal layer 10, characteristic with a reflects infrared light, and the one side of this first translucent conductive metal layer 10 is irradiation faces, in order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion; One p-i-n semiconductor layer 20 is formed at the below of these first translucent conductive metal layer 10 another sides, in order to produce electron hole pair, electric current to be provided and to increase absorptivity; And at least one transparency carrier 30, it is formed at this p-i-n semiconductor layer 20 belows.
In the present embodiment, the material of this transparency carrier 30 can use general glass, quartz, perspex, sapphire substrate or transparent flexual material or the like.
This first translucent conductive metal layer 10, can be single transition metal or aluminium one of them, this transition metal for example is silver or nickel or the like, with silver is example, the thickness of silver is between 3nm～25nm, and the characteristic of silver has good light transmittance and because of silver-colored tool reduces the characteristic of resistance value, therefore has favorable conductive character at visible-range, preferably, Yin thickness is between 3nm～5nm, 10nm～15nm and 20nm～25nm.Because of the very thin thickness of silver, the integral thickness of thin-film solar cells is reduced in addition.
In other present embodiment, this first translucent conductive metal layer 10, because single transition metal or aluminium, so have the characteristic of reflects infrared light, and can reach heat insulation effect.
When the irradiation face of this first translucent conductive metal layer 10 is subjected to solar light irradiation, the characteristic that has reflects infrared light because of this first semi-transparent conductive metal layer 10, enter to this p-i-n semiconductor layer 20 so can intercept infrared light, to reach heat insulation effect, all the other light then can enter to this p-i-n semiconductor layer 20 by penetrating this first translucent conductive metal layer 10, solar light irradiation is connect on the face in pn, in order to do making the part electronics because of having enough energy, leave atom and become free electron, lose the atom of electronics thereby produce the hole, and see through the p N-type semiconductor N and the n N-type semiconductor N attracts hole and electronics respectively, positive electricity and negative electricity are separated, connect the face two ends thereby produce potential difference at pn, connect a circuit (figure does not show) by this first translucent conductive metal layer 10 again, make electronics be able to by, and combine once more with the hole that connects the face other end at pn, just produce electric current, take out electric energy by this first translucent conductive metal layer 10 again, to convert available power to, in order to do making the utility model except effectively light being converted to the electric energy, also simultaneously with heat insulation effect, and because of the of the present utility model first translucent conductive metal layer 10 is transition metal or aluminium, it has good electrical conductivity, and good light transmittance is arranged for making at visible-range, the thickness of the of the present utility model first translucent conductive metal layer 10 is moderate, to avoid producing discontinuous island film.
The utility model is used to intercept the thin-film solar cells composition structure 100 of infrared light, because of having effect of heat insulation, so applicable to the window of building, building curtain wall, indoor agricultural plantation etc., to intercept the irradiation of infrared light effectively, effectively reduce indoor temperature and reduce the electric weight that room lighting consumed, to reach the purpose of saving the energy.
Seeing also Fig. 2, is the thin-film solar cells composition structure chart that is used to intercept infrared light of the utility model second embodiment.The utility model is used to intercept the thin-film solar cells composition structure 100 of infrared light, at least comprise: one first translucent conductive metal layer 10 ', characteristic with a reflects infrared light, and the one side of this first translucent conductive metal layer 10 ' is an irradiation face, in order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion; One p-i-n semiconductor layer 20 ' is formed at this first translucent conductive metal layer, 10 ' below, in order to produce electron hole pair, electric current to be provided and to increase absorptivity; At least one second translucent conductive metal layer 40 is formed at the below of this p-i-n semiconductor layer 20 ', in order to take out electric energy and the efficient that promotes opto-electronic conversion; And a transparency carrier 30 ', it is formed at this second translucent conductive metal layer, 40 belows, in order to take out electric energy and the efficient that promotes opto-electronic conversion.
In the present embodiment, the material of this transparency carrier 30 ' can use general glass, quartz, perspex, sapphire substrate or transparent flexual material or the like.
This first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40, can be single transition metal or aluminium one of them, this transition metal for example is silver or nickel or the like, with silver is example, the thickness of silver is between 3nm～25nm, and the characteristic of silver has good light transmittance and because of silver-colored tool reduces the characteristic of resistance value, therefore has favorable conductive character at visible-range, preferably, Yin thickness is between 3nm～5nm, 10nm～15nm and 20nm～25nm.Because of the very thin thickness of silver, the integral thickness of thin-film solar cells is reduced in addition.
In other present embodiment, this first translucent conductive metal layer 10, because single transition metal or aluminium, so have the characteristic of reflects infrared light, and can reach heat insulation effect.
When the irradiation face of this first translucent conductive metal layer 10 ' is subjected to solar light irradiation, the characteristic that has reflects infrared light because of this first semi-transparent conductive metal layer 10 ', enter to this p-i-n semiconductor layer 20 so can intercept infrared light, to reach heat insulation effect, all the other light then can enter to this p-i-n semiconductor layer 20 ' by penetrating this first translucent conductive metal layer 10 ', solar light irradiation is connect on the face in pn, in order to do making the part electronics because of having enough energy, leave atom and become free electron, lose the atom of electronics thereby produce the hole, and see through the p N-type semiconductor N and the n N-type semiconductor N attracts hole and electronics respectively, positive electricity and negative electricity are separated, connect the face two ends thereby produce potential difference at pn, respectively connect a circuit (figure does not show) by this first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40 again, make electronics be able to by, and combine once more with the hole that connects the face other end at pn, just produce electric current, take out electric energy by this first translucent conductive metal layer 10 ' and this second translucent conductive metal layer 40 again, to convert available power to, in order to do making the utility model except effectively light being converted to the electric energy, also simultaneously with heat insulation effect, and because of the of the present utility model first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40 are transition metal or aluminium, it has good electrical conductivity, and good light transmittance is arranged for making at visible-range, the thickness of the of the present utility model first translucent conductive metal layer 10 ' and the second translucent conductive metal layer 40 is moderate, to avoid producing discontinuous island film.
The utility model is used to intercept the thin-film solar cells composition structure 100 of infrared light, because of having effect of heat insulation, so applicable to the window of building, building curtain wall, indoor agricultural plantation etc., to intercept the irradiation of infrared light effectively, effectively reduce indoor temperature and reduce the electric weight that room lighting consumed, to reach the purpose of saving the energy.
Seeing also Fig. 3, is the thin-film solar cells composition structure chart that is used to intercept infrared light of the utility model the 3rd embodiment.In the present embodiment, its general configuration is identical with the utility model first embodiment, and difference is, p-i-n layer 20 is changed into-n-i-p layer 70, can be reached heat insulation effect equally, and can reduce resistance value simultaneously, make and to utilize power to rise, thereby improve the efficient of conversion.
Seeing also Fig. 4, is the thin-film solar cells composition structure chart that is used to intercept infrared light of the utility model the 4th embodiment.In the present embodiment, its general configuration is identical with the utility model second embodiment, and difference is, p-i-n layer 20 ' is changed into-n-i-p layer 70 ', can be reached heat insulation effect equally, and can reduce resistance value simultaneously, make and to utilize power to rise, thereby improve the efficient of conversion.
Seeing also Fig. 5, is that the utility model thin-film solar cells is formed first translucent conductive metal layer of structure and the first enforcement structure graph of the second translucent conductive metal layer.The utility model thin-film solar cells is formed the first translucent conductive metal layer 10 of structure 100,10 ' and the second translucent conductive metal layer 40 is except can be single transition metal or aluminium one of them, also can be one of them that comprises one first transparent conductive oxide 50 and a transition metal or aluminium, at present embodiment, this first transparent conductive oxide 50 is the tops that are formed at this transition metal or aluminium, this first transparent conductive oxide can be zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO) or the like transparent conductive oxide, these a little transparent conductive oxides have lower resistivity, in order to do making the penetrance that increases light.
Seeing also Fig. 6, is that the utility model thin-film solar cells is formed first translucent conductive metal layer of structure and the second enforcement structure graph of the second translucent conductive metal layer.The utility model thin-film solar cells is formed the first translucent conductive metal layer 10 of structure 100,10 ' and the second translucent conductive metal layer 40 comprises one of them of one first transparent conductive oxide 50 ' and a transition metal or aluminium, at present embodiment, this first transparent conductive oxide 50 ' is the below that is formed at this transition metal or aluminium, this first transparent conductive oxide 50 ' can be zinc oxide aluminum (AZO), zinc-gallium oxide (GZO) or zinc oxide boron (ZnO) or the like transparent conductive oxide, these a little transparent conductive oxides have lower resistivity, in order to do making the penetrance that increases light.
Seeing also Fig. 7, is that the utility model thin-film solar cells is formed first translucent conductive metal layer of structure and the 3rd enforcement structure graph of the second translucent conductive metal layer.The utility model thin-film solar cells is formed the first translucent conductive metal layer 10 of structure 100,10 ' and the second translucent conductive metal layer 40 comprises one first transparent conductive oxide 50 "; one of them of a transition metal or aluminium and one second transparent conductive oxide 60; in the present embodiment; this transition metal or aluminium are to place this first transparent conductive oxide 50 " and second transparent conductive oxide 60 between, this first transparent conductive oxide 50 " and second transparent conductive oxide 60 can be zinc oxide aluminum (AZO); zinc-gallium oxide (GZO) or zinc oxide boron (ZnO) or the like transparent conductive oxide; these a little transparent conductive oxides have lower resistivity, in order to do making the penetrance that increases light.
The utility model is used to intercept the thin-film solar cells composition structure of infrared light, the characteristic that has reflects infrared light by translucent conductive metal layer of the present utility model, and reach heat insulation effect effectively, and utilize translucent conductive metal layer to reduce resistance value effectively, to increase conductance, make and to utilize power to rise, thereby improve the efficient of conversion, and by the existing known nesa coating of translucent conductive metal layer replacement, increase photosphere and penetration length effectively, and the increase reflective character is to increase whole conversion efficiency.
Though the utility model discloses as above with preferred embodiment, so be not in order to limit the scope that the utility model is implemented, the simple equivalent of doing according to claims of the present utility model and description changes and modification, still belongs to the scope of technical solutions of the utility model.
Claims (18)
1. a thin-film solar cells that is used to intercept infrared light is formed structure, it is characterized in that comprising at least:
One first translucent conductive metal layer has the characteristic of a reflects infrared light, and the one side of this first translucent conductive metal layer is the irradiation face, in order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion;
One p-i-n semiconductor layer, it is formed at this first translucent conductive metal layer below, in order to produce electron hole pair, photoelectric current to be provided and to increase absorptivity; And
One transparency carrier, it is formed at this p-i-n semiconductor layer below.
2. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 1 is characterized in that it further comprises one second translucent conductive metal layer, is formed between aforementioned transparency carrier and the p-i-n semiconductor layer.
3. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 1, the material that it is characterized in that wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
4. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 1 is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer are single transition metal or aluminium.
5. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 1 is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them of one first transparent conductive oxide and a transition metal or aluminium.
6. the thin-film solar cells that is used to intercept infrared light as claimed in claim 1 is formed structure, it is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them and one second transparent conductive oxide of one first transparent conductive oxide, a transition metal or aluminium.
7. as the described thin-film solar cells composition structure that is used to intercept infrared light of arbitrary claim in the claim 4 to 6, it is characterized in that wherein said transition metal is silver or nickel.
8. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 7, the thickness that it is characterized in that wherein said silver is between 3nm～25nm.
9. as claim 5 or the 6 described thin-film solar cells composition structures that are used to intercept infrared light, it is characterized in that wherein said first transparent conductive oxide and second transparent conductive oxide are zinc oxide aluminum, zinc-gallium oxide or zinc oxide boron.
10. a thin-film solar cells that is used to intercept infrared light is formed structure, it is characterized in that comprising at least:
One first translucent conductive metal layer has the characteristic of a reflects infrared light, and the one side of this first translucent conductive metal layer is the irradiation face, in order to receiving a natural daylight, and in order to take out electric energy and the efficient that promotes opto-electronic conversion;
One n-i-p semiconductor layer, it is formed at this first translucent conductive metal layer below, in order to produce electron hole pair, photoelectric current to be provided and to increase absorptivity; And
One transparency carrier, it is formed at this n-i-p semiconductor layer below.
11. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 10 is characterized in that it further comprises one second translucent conductive metal layer, is formed between aforementioned transparency carrier and the n-i-p semiconductor layer.
12. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 10, the material that it is characterized in that wherein said transparency carrier is glass, quartz, perspex, sapphire substrate or transparent flexual material.
13. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 10 is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer are single transition metal or aluminium.
14. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 10 is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them of one first transparent conductive oxide and a transition metal or aluminium.
15. the thin-film solar cells that is used to intercept infrared light as claimed in claim 10 is formed structure, it is characterized in that the wherein said first translucent conductive metal layer and the second translucent conductive metal layer comprise one of them and one second transparent conductive oxide of one first transparent conductive oxide, a transition metal or aluminium.
16., it is characterized in that wherein said transition metal is silver or nickel as the described thin-film solar cells composition structure that is used to intercept infrared light of arbitrary claim in the claim 13 to 15.
17. the thin-film solar cells composition structure that is used to intercept infrared light as claimed in claim 16, the thickness that it is characterized in that wherein said silver is between 3nm～25nm.
18., it is characterized in that wherein said first transparent conductive oxide and second transparent conductive oxide are zinc oxide aluminum, zinc-gallium oxide or zinc oxide boron as claim 14 or the 15 described thin-film solar cells composition structures that are used to intercept infrared light.
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| CN2010206253256U CN201877447U (en) | 2010-11-24 | 2010-11-24 | Thin film solar battery structure for blocking infrared light |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102991407A (en) * | 2011-09-13 | 2013-03-27 | 吉富新能源科技(上海)有限公司 | Vehicle light emitting diode (LED) lamp with transparent thin-film solar cell |
| CN103017247A (en) * | 2011-09-22 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Heating device with thin-film solar cell |
-
2010
- 2010-11-24 CN CN2010206253256U patent/CN201877447U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102991407A (en) * | 2011-09-13 | 2013-03-27 | 吉富新能源科技(上海)有限公司 | Vehicle light emitting diode (LED) lamp with transparent thin-film solar cell |
| CN103017247A (en) * | 2011-09-22 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Heating device with thin-film solar cell |
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