CN201829508U - Solar battery - Google Patents

Solar battery Download PDF

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Publication number
CN201829508U
CN201829508U CN2010205558488U CN201020555848U CN201829508U CN 201829508 U CN201829508 U CN 201829508U CN 2010205558488 U CN2010205558488 U CN 2010205558488U CN 201020555848 U CN201020555848 U CN 201020555848U CN 201829508 U CN201829508 U CN 201829508U
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CN
China
Prior art keywords
solar cell
diffraction grating
nanometers
contact
light absorbing
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Expired - Lifetime
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CN2010205558488U
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Chinese (zh)
Inventor
任宇航
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Sun Harmonics Ltd
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Sun Harmonics Ltd
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Priority to CN2010205558488U priority Critical patent/CN201829508U/en
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Publication of CN201829508U publication Critical patent/CN201829508U/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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Abstract

The utility model discloses a solar battery which is applied in the field of the solar energy generation, and comprises a transparent conductive film layer, a buffer layer and a light absorbing layer, wherein diffraction grating is formed on the contact surface between at least one transparent conductive film layer and the light absorbing layer. As for the utility model, by changing the transmission direction of incident photon in the battery, the problem that photoelectricity conversion efficiency is low as the sunlight can only pass through the light absorbing layer along the refraction direction with small inclined angle after entering a battery body in the prior art existing in the field of the solar batteries can be solved.

Description

A kind of solar cell
Technical field
The utility model relates to field of solar thermal power generation, relates in particular to a kind of solar cell.
Background technology
Thin-film solar cells generally comprises light absorbing zone, resilient coating, transparent conductive film layer, as the patent No. is 200810187542 disclosed solar cell devices, but because the characteristic of the propagation of light, after sunlight enters battery pond body, can only pass through light absorbing zone along the refractive direction of small inclination, therefore influence electricity conversion.
The utility model content
Thereby being to provide a kind of, the purpose of this utility model can prolong the structure that the effective propagation path of photon in the body of battery pond improves the photoelectric conversion efficiency of CIGS thin-film solar cell.
To achieve these goals, the technical solution adopted in the utility model is as follows:
A kind of solar cell comprises the transparent conductive film layer, resilient coating, the light absorbing zone that are arranged in order, forms diffraction grating at least one the interlayer contact-making surface between described transparent conductive film layer and the light absorbing zone.
Preferably, described interlayer contact-making surface is the contact-making surface between described transparent conductive film layer and the resilient coating.
Preferably, described interlayer contact-making surface is the contact-making surface between described resilient coating and the light absorbing zone.
Preferably: described interlayer contact-making surface comprises contact-making surface between described transparent conductive film layer and the resilient coating and the contact-making surface between described resilient coating and the light absorbing zone, and the light transmittance of the grating on two contact-making surfaces becomes corresponding relation.
Preferred, described diffraction grating is a square wave form diffraction grating.Preferred again, the repetition period P of described square wave form diffraction grating is between 10 nanometers and 2 microns, and depth D is between 10 nanometers and 1 micron.Further preferred, the repetition period P of described square wave form diffraction grating is 1005 nanometers ± 20%, and depth D is 505 nanometers ± 20%.
Preferred, described diffraction grating is sinusoidal wave form diffraction grating, and is preferred again, and the repetition period P of described sinusoidal wave form diffraction grating is between 10 nanometers and 2 microns, and depth D is between 10 nanometers and 1 micron.Further preferred, the repetition period P of described sinusoidal wave form diffraction grating is 1005 nanometers ± 20%, and depth D is 505 nanometers ± 20%.
The beneficial effects of the utility model are as follows:
Compared with prior art, the utility model is provided with grating by the top at solar cell, and grating is made of the material of solar cell own, grating can produce diffraction, the direction of propagation of incident photon is changed (inclination angle of diffraction light is bigger), and prolong the effective propagation path of photon in the body of battery pond, thereby effectively reduce the thickness of light absorbing zone and the electricity conversion of raising solar cell.This structure of the present utility model can be applied in copper indium gallium selenium solar cell, silion cell, and various solar cells such as CdTe battery improve photoelectric conversion efficiency.
Description of drawings
Fig. 1 is the structure chart of embodiment 1 of the present utility model;
Fig. 2 is the structure chart of embodiment 2 of the present utility model;
Fig. 3 is the structure chart of embodiment 3 of the present utility model;
Fig. 4 is the structure chart of embodiment 4 of the present utility model;
Fig. 5 is the effect contrast figure of the novel embodiment of this usefulness.
The 1-antireflecting layer, 2-transparent conductive film layer, 3-resilient coating, 4-light absorbing zone, 5-lower electrode layer, 6-substrate.
Embodiment
Below in conjunction with the drawings and specific embodiments the technical solution of the utility model is further described.
Below each embodiment be the example explanation with the copper indium gallium selenium solar cell.
Embodiment 1
Referring to accompanying drawing 1, solar cell comprises antireflecting layer 1, transparent conductive film layer 2, resilient coating 3 (ZnS or CdS), light absorbing zone 4 (CIGS), lower electrode layer 5 (Mo), the substrate 6 that is arranged in order among this embodiment, on the contact-making surface of transparent conductive film layer 2 and resilient coating 3 (ZnS or CdS), form square wave form diffraction grating, the repetition period P of diffraction grating is 1005 nanometers, and depth D is 505 nanometers.
Embodiment 2
Referring to accompanying drawing 2, solar cell comprises antireflecting layer 1, transparent conductive film layer 2, resilient coating 3 (ZnS or CdS), light absorbing zone 4 (CIGS), lower electrode layer 5 (Mo), the substrate 6 that is arranged in order among this embodiment, forming square wave form diffraction grating on the contact-making surface of transparent conductive film layer 2 and resilient coating 3 (ZnS or CdS) and on the contact-making surface of resilient coating 3 (ZnS or CdS) and light absorbing zone 4 (CIGS), the light transmittance of the diffraction grating on two contact-making surfaces is corresponding, the repetition period P of diffraction grating is 500 nanometers, and depth D is 300 nanometers.
Embodiment 3
Referring to accompanying drawing 3, solar cell comprises antireflecting layer 1, transparent conductive film layer 2, resilient coating 3 (ZnS or CdS), light absorbing zone 4 (CIGS), lower electrode layer 5 (Mo), the substrate 6 that is arranged in order among this embodiment, on the contact-making surface of transparent conductive film layer 2 and resilient coating 3 (ZnS or CdS), form sinusoidal wave form diffraction grating, the repetition period P of diffraction grating is 110 nanometers, and depth D is 400 nanometers.
Embodiment 4
Referring to accompanying drawing 4, solar cell comprises antireflecting layer 1, transparent conductive film layer 2, resilient coating 3 (ZnS or CdS), light absorbing zone 4 (CIGS), lower electrode layer 5 (Mo), the substrate 6 that is arranged in order among this embodiment, forming sinusoidal wave form diffraction grating on the contact-making surface of transparent conductive film layer 2 and resilient coating 3 (ZnS or CdS) and on the contact-making surface of resilient coating 3 (ZnS or CdS) and light absorbing zone 4 (CIGS), the light transmittance of the diffraction grating on two contact-making surfaces is corresponding, the repetition period P of diffraction grating is 700 nanometers, and depth D is 400 nanometers.
Referring to accompanying drawing 5, but be the identical result of use comparison diagram that does not have the solar cell of grating of solar cell of embodiment 3 with structure, wherein abscissa is the thickness of light absorbing zone 4 (CIGS), ordinate is a photoelectric conversion efficiency, incident light is natural daylight (comprising full wave sunlight), concrete grating result of use: the copper indium gallium selenium solar cell that uses optical grating construction of the present invention just almost can saturated absorption when light absorbing zone is 500 nanometers; And when using different light absorbing zone thickness, its optoelectronic transformation efficiency is generally than the copper indium gallium selenium solar cell height that does not use optical grating construction of the present invention.This effect is particularly evident when the glimmer absorbed layer.

Claims (10)

1. a solar cell comprises the transparent conductive film layer, resilient coating, the light absorbing zone that are arranged in order, it is characterized in that: form diffraction grating at least one the interlayer contact-making surface between described transparent conductive film layer and the light absorbing zone.
2. solar cell according to claim 1 is characterized in that: described interlayer contact-making surface is the contact-making surface between described transparent conductive film layer and the resilient coating.
3. solar cell according to claim 1 is characterized in that: described interlayer contact-making surface is the contact-making surface between described resilient coating and the light absorbing zone.
4. solar cell according to claim 1, it is characterized in that: described interlayer contact-making surface comprises contact-making surface between described transparent conductive film layer and the resilient coating and the contact-making surface between described resilient coating and the light absorbing zone, and the light transmittance of the grating on two contact-making surfaces becomes corresponding relation.
5. according to the arbitrary described solar cell of claim 1-4, it is characterized in that: described diffraction grating is a square wave form diffraction grating.
6. solar cell according to claim 5 is characterized in that: the repetition period P of described square wave form diffraction grating is between 10 nanometers and 2 microns, and depth D is between 10 nanometers and 1 micron.
7. solar cell according to claim 6 is characterized in that: the repetition period P of described square wave form diffraction grating is 1005 nanometers ± 20%, and depth D is 505 nanometers ± 20%.
8. according to the arbitrary described solar cell of right request 1-4, it is characterized in that: described diffraction grating is sinusoidal wave form diffraction grating.
9. solar cell according to claim 8, its spy is: the repetition period P of described sinusoidal wave form diffraction grating is between 10 nanometers and 2 microns, and depth D is between 10 nanometers and 1 micron.
10. solar cell according to claim 9 is characterized in that: the repetition period P of described sinusoidal wave form diffraction grating is 1005 nanometers ± 20%, and depth D is 505 nanometers ± 20%.
CN2010205558488U 2010-10-11 2010-10-11 Solar battery Expired - Lifetime CN201829508U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010205558488U CN201829508U (en) 2010-10-11 2010-10-11 Solar battery

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Application Number Priority Date Filing Date Title
CN2010205558488U CN201829508U (en) 2010-10-11 2010-10-11 Solar battery

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CN201829508U true CN201829508U (en) 2011-05-11

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576839A (en) * 2014-12-19 2015-04-29 夏景 Design method of high-efficiency thin-film solar photovoltaic panel
CN108649091A (en) * 2018-04-25 2018-10-12 榆林学院 A kind of solar cell photovoltaic component
EP3369118A4 (en) * 2015-10-30 2019-06-05 Tropiglas Technologies Ltd A panel structure for receiving light and generating electricity

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576839A (en) * 2014-12-19 2015-04-29 夏景 Design method of high-efficiency thin-film solar photovoltaic panel
EP3369118A4 (en) * 2015-10-30 2019-06-05 Tropiglas Technologies Ltd A panel structure for receiving light and generating electricity
US11121276B2 (en) 2015-10-30 2021-09-14 Tropiglas Technologies Ltd. Panel structure for receiving light and generating electricity
CN108649091A (en) * 2018-04-25 2018-10-12 榆林学院 A kind of solar cell photovoltaic component

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Granted publication date: 20110511