CN204315594U - Based on the solar cell of silicon nanowire array - Google Patents
Based on the solar cell of silicon nanowire array Download PDFInfo
- Publication number
- CN204315594U CN204315594U CN201520042039.XU CN201520042039U CN204315594U CN 204315594 U CN204315594 U CN 204315594U CN 201520042039 U CN201520042039 U CN 201520042039U CN 204315594 U CN204315594 U CN 204315594U
- Authority
- CN
- China
- Prior art keywords
- nanowire array
- solar cell
- silicon
- array structure
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of solar cell based on silicon nanowire array.It comprises back electrode (6) and N-type silicon substrate (5), and wherein the upper surface of N-type silicon substrate (5) adopts nanowire array structure, and the diameter of every root silicon nanowires is 40-80nm, and length is 5-10 μm; This nanowire array structure surface is sequentially laminated with intrinsic amorphous silicon layer (4), P-type non-crystalline silicon layer (3) and ITO Indium-tin Oxide Transparent Conductive Film (2), and the top of nanowire array structure is provided with positive electrode (1).The utility model, owing to adopting silicon nanowire array structure, has good sunken light effect, and improves the collection efficiency of charge carrier, is conducive to improving energy converter to the absorption of photon and utilization, improves the conversion efficiency of solar cell, can be used for photovoltaic generation.
Description
Technical field
The utility model relates to the technical field of solar cell, particularly relates to a kind of solar cell based on silicon nanowire array, can be used for photovoltaic generation.
Background technology
Because solar energy is abundant and clean, for energy related application widely, photovoltaic device very attractive.But, silica-based low with electricity conversion that is other solar cells at present, make the cost of solar cell higher, hinder its development and application.The optoelectronic transformation efficiency of solar cell is defined as the electricity output of solar cell and the ratio of the solar energy of solar cell surface region incidence.In the making of actual solar cell, there is several factors to limit the performance of device, thus must consider the impact of these factors in the design of solar cell and the selection of material etc.
In order to improve the optoelectronic transformation efficiency of solar cell, needing to adopt and falling into light technology.When light is through these structures, can scattering be there is in light beam, scattered light enters the absorbed layer of hull cell with larger incidence angle, and because the refraction coefficient of absorbed layer material is usually high than the refractive index of surrounding material, the light beam of large-angle scatter is easy to total reflection occurs in absorbed layer.Total reflection light beam oscillate in absorbed layer, until the generation photo-generated carrier that is absorbed by the absorption layer.Like this by falling into light technology, effectively can improve the light absorption of thin-film solar cells, thus improve cell conversion efficiency.
The light trapping structure of existing solar cell surface adopts three-dimensional inverted trapezoidal structure usually, and section as shown in Figure 2.Its structure is respectively from top to bottom: metal electrode 1, ITO indium tin oxide transparent conducting film 2, P-type non-crystalline silicon layer 3, intrinsic amorphous silicon layer 4, N-type silicon substrate 5, back electrode 6.Substrate surface passes through wet etching, form the surface having three-dimensional inverted trapezoidal repetitive, using plasma chemical vapor deposition PECVD deposition intrinsic amorphous silicon layer and P-type non-crystalline silicon layer thereon again, forms the energy transfer mechanism with three-dimensional inverted trapezoidal light trapping structure.When the incident battery surface light of light can in its surperficial continuous reflection, increase the effective exercise length of light in battery surface light trapping structure and order of reflection, thus energization switching mechanism is to the absorption efficiency of light.But this structure due to matte size uneven and distributed more widely, substrate surface defect concentration is increased greatly, is difficult to obtain high-quality matte at front surface and falls into light, not easily reduce substrate to the reflection coefficient of light.
Utility model content
The utility model object is for the deficiencies in the prior art, proposes a kind of solar cell based on silicon nanowire array, to reduce the reflection of light, improves the absorption to photon and utilization, improves the transformation efficiency of solar cell.
For achieving the above object, the solar cell based on silicon nanowire array that the utility model proposes, comprise back electrode 6 and N-type silicon substrate 5, it is characterized in that: the upper surface of N-type silicon substrate 5 adopts nanowire array structure, this nanowire array structure upper surface is sequentially laminated with intrinsic amorphous silicon layer 4, P-type non-crystalline silicon layer 3 and ITO Indium-tin Oxide Transparent Conductive Film 2, and the top of nanowire array structure is provided with positive electrode 1.
As preferably, described P-type non-crystalline silicon layer 3 and the thickness of intrinsic amorphous silicon layer 4 are 10-15nm.
As preferably, in described nano-wire array, the diameter of every root silicon nanowires is 40-80nm, and length is 5-10 μm.
As preferably, described N-type silicon substrate 5 thickness is 200-400 μm.
As preferably, described positive electrode 1 adopts thickness to be the titanium-nickel-aluminium multiple layer metal material of 20nm/20nm/40nm.
As preferably, described back electrode 6 adopts thickness to be the metallic aluminum material of 60nm.
The utility model adopts nano thread structure due to N-type silicon substrate surface, has good sunken light effect, and improves the collection efficiency of charge carrier, improve the energy conversion efficiency of solar cell.
Accompanying drawing explanation
Fig. 1 is cross-sectional view of the present utility model.
Fig. 2 is existing non-crystal silicon solar cell structural representation.
Embodiment
With reference to Fig. 1, the utility model provides following three embodiments:
Embodiment 1:
The solar cell of this example comprises positive electrode 1, ITO Indium-tin Oxide Transparent Conductive Film 2, P-type non-crystalline silicon layer 3, intrinsic amorphous silicon layer 4, N-type silicon substrate 5 and back electrode 6, wherein back electrode 6 is positioned at N-type silicon substrate 5 back side, the upper surface of N-type silicon substrate 5 adopts nanowire array structure, intrinsic amorphous silicon layer 4, P-type non-crystalline silicon layer 3 and ITO Indium-tin Oxide Transparent Conductive Film 2 are sequentially laminated on this nanowire array structure surface, and positive electrode 1 is arranged on the top of nanowire array structure.Described positive electrode 1 adopts thickness to be the titanium-nickel-aluminium multiple layer metal material of 20nm/20nm/40nm; Described P-type non-crystalline silicon layer 3 is 10nm with intrinsic amorphous silicon layer 4 thickness; In described silicon nanowire array, the diameter of every root silicon nanowires is 40nm, and length is 5 μm; Described N-type silicon substrate 5 thickness is 200 μm; Described back electrode 6 adopts thickness to be the metallic aluminum material of 60nm.
Embodiment 2:
The solar battery structure of this example is identical with embodiment 1, namely adopts the solar cell of silicon nanowire array structure, and its Parameters variation is as follows:
Described P-type non-crystalline silicon layer 3 is 13nm with intrinsic amorphous silicon layer 4 thickness; In described silicon nanowire array, the diameter of every root silicon nanowires is 60nm, and length is 8 μm; Described N-type silicon substrate 5 thickness is 300 μm.
Embodiment 3:
The solar battery structure of this example is identical with embodiment 1, namely adopts the solar cell of silicon nanowire array structure, and its Parameters variation is as follows:
Described P-type non-crystalline silicon layer 3 is 15nm with intrinsic amorphous silicon layer 4 thickness; In described silicon nanowire array, the diameter of every root silicon nanowires is 80nm, and length is 10 μm; Described N-type silicon substrate 5 thickness is 400 μm.
The making of this utility model is: first form nanowire array structure at N-type silicon substrate 5 upper surface by dry etching; Form intrinsic amorphous silicon layer 4 and P-type non-crystalline silicon layer 3, form ITO Indium-tin Oxide Transparent Conductive Film 2 by sputtering by deposit on the surface of this nanowire array structure successively again; Then multiple layer metal positive electrode 1 is formed on the top of nanowire array structure by electron beam evaporation; Finally form back electrode 6 at N-type silicon substrate 5 back side evaporated metal aluminium.The utility model has good sunken light effect, is conducive to the raising of carrier collection efficiency simultaneously, improves the conversion efficiency of solar cell.
Claims (6)
1. the solar cell based on silicon nanowire array, comprise back electrode (6) and N-type silicon substrate (5), it is characterized in that: the upper surface of N-type silicon substrate (5) adopts nanowire array structure, this nanowire array structure is on the surface sequentially laminated with intrinsic amorphous silicon layer (4), P-type non-crystalline silicon layer (3) and ITO Indium-tin Oxide Transparent Conductive Film (2), and the top of nanowire array structure is provided with positive electrode (1).
2. the solar cell based on silicon nanowire array according to claim 1, is characterized in that: the thickness of P-type non-crystalline silicon layer (3) and intrinsic amorphous silicon layer (4) is 10-15nm.
3. the solar cell based on silicon nanowire array according to claim 1, is characterized in that: in the silicon nanowire array on N-type silicon substrate (5) surface, the diameter of every root silicon nanowires is 40-80nm, and length is 5-10 μm.
4. the solar cell based on silicon nanowire array according to claim 1, is characterized in that: N-type silicon substrate (5) thickness is 200-400 μm.
5. the solar cell based on silicon nanowire array according to claim 1, is characterized in that: positive electrode (1) employing thickness is the titanium-nickel-aluminium multiple layer metal material of 20nm/20nm/40nm.
6. the solar cell based on silicon nanowire array according to claim 1, is characterized in that: back electrode (6) adopts thickness to be the metallic aluminum material of 60nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520042039.XU CN204315594U (en) | 2015-01-21 | 2015-01-21 | Based on the solar cell of silicon nanowire array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520042039.XU CN204315594U (en) | 2015-01-21 | 2015-01-21 | Based on the solar cell of silicon nanowire array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204315594U true CN204315594U (en) | 2015-05-06 |
Family
ID=53137895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520042039.XU Active CN204315594U (en) | 2015-01-21 | 2015-01-21 | Based on the solar cell of silicon nanowire array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204315594U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538470A (en) * | 2015-01-21 | 2015-04-22 | 中电投西安太阳能电力有限公司 | Silicon nanowire array based solar battery and preparation method thereof |
| CN106784114A (en) * | 2016-12-16 | 2017-05-31 | 上海电机学院 | A kind of thin film silicon crystalline silicon laminate solar photovoltaic cell based on silicon nanowires |
-
2015
- 2015-01-21 CN CN201520042039.XU patent/CN204315594U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538470A (en) * | 2015-01-21 | 2015-04-22 | 中电投西安太阳能电力有限公司 | Silicon nanowire array based solar battery and preparation method thereof |
| CN106784114A (en) * | 2016-12-16 | 2017-05-31 | 上海电机学院 | A kind of thin film silicon crystalline silicon laminate solar photovoltaic cell based on silicon nanowires |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI408825B (en) | A solar cell apparatus having the transparent conducting layer with the periodic structure | |
| CN102403376B (en) | n-i-p heterojunction solar cell with silicon quantum dot and preparation method thereof | |
| CN104538470A (en) | Silicon nanowire array based solar battery and preparation method thereof | |
| WO2010111970A1 (en) | Transparent conductive substrate for solar cells | |
| CN201936901U (en) | Composition structure of thin-film solar battery | |
| CN204315587U (en) | Based on the solar cell of GaN nano wire array | |
| CN204332972U (en) | A kind of HIT solar cell | |
| CN204315594U (en) | Based on the solar cell of silicon nanowire array | |
| CN204375768U (en) | Based on the solar cell of silicon nanowires three-dimensional structure | |
| CN204315610U (en) | Based on the solar cell of GaN nano wire three-dimensional structure | |
| CN105789346A (en) | Solar cell based on silicon nanowires | |
| CN105845758A (en) | Silicon solar energy cell based on organic passivation film | |
| CN201829508U (en) | Solar battery | |
| CN110416342A (en) | A kind of HJT battery and preparation method thereof based on metal nanoparticle | |
| JP5266375B2 (en) | Thin film solar cell and manufacturing method thereof | |
| CN102163638A (en) | Etching-technology-based silicon science (SIS) junction solar cell | |
| CN211295115U (en) | Solar cell based on silicon nanowire structure | |
| Fang et al. | Substrate effect on ultra-thin hydrogenated amorphous silicon solar cells | |
| CN204332980U (en) | A kind of HIT solar cell | |
| CN204315609U (en) | Based on the heterojunction solar battery of silicon nanowire suede | |
| CN106784335A (en) | A kind of surface plasmon-polarition type heterogeneous integrated solar cell of conduction | |
| CN204315580U (en) | Silicon bi-layer nanowire solar cells | |
| CN204315586U (en) | The Graphene electrodes solar cell of GaN nanometer grid line | |
| CN203932081U (en) | A kind of silicon-based film solar cells with resilient coating | |
| CN204315579U (en) | Double-deck GaN nano wire solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |