CN105845758A - Silicon solar energy cell based on organic passivation film - Google Patents
Silicon solar energy cell based on organic passivation film Download PDFInfo
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- CN105845758A CN105845758A CN201610217600.2A CN201610217600A CN105845758A CN 105845758 A CN105845758 A CN 105845758A CN 201610217600 A CN201610217600 A CN 201610217600A CN 105845758 A CN105845758 A CN 105845758A
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- Prior art keywords
- silicon
- passivation film
- silicon solar
- cell based
- organic passivation
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 238000002161 passivation Methods 0.000 title claims abstract description 18
- 239000002070 nanowire Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229920002873 Polyethylenimine Polymers 0.000 claims abstract description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 18
- 239000010408 film Substances 0.000 description 16
- 210000004027 cell Anatomy 0.000 description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002803 fossil fuel Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a silicon solar energy cell based on an organic passivation film. The silicon solar energy cell comprises a back electrode (6) and a P-type silicon substrate (5). The silicon solar energy cell is characterized in that the upper surface of the P-type silicon substrate (5) employs a silicon nanowire array structure, a branched polyethyleneimine passivation film (4), an N-type amorphous silicon layer (3) and a transparent conductive indium tin oxide film (2) are sequentially laminated on the surface of the silicon nanowire array structure, the top end of the nanowire array structure is provided with a positive electrode (1). According to the silicon solar energy cell, the surface of the P-type silicon substrate employs the nanowire structure, the excellent light tripping effect is realized, carrier collection efficiency is improved, moreover, passivation performance of the branched polyethyleneimine passivation film is excellent, and energy conversion efficiency of the silicon solar energy cell is improved.
Description
Technical field
The present invention relates to the technical field of solaode, particularly relate to a kind of based on organic blunt
Change the silicon solar cell of film.
Background technology
Since the industrial revolution, along with industrialized development and progress, to the demand of the energy the most drastically
Increasing, wherein fossil fuel is topmost energy and material.But tellurian fossil fuel energy
The total reserves in source are limited, and are non-renewable energy resources, thus the whole world is faced with the energy shape of sternness
Gesture.Discharge substantial amounts of toxic gas and carbon dioxide gas during the use of fossil fuel simultaneously
Body, causes serious environmental pollution and greenhouse effect, causes front institute to the living environment of the mankind
The huge disaster not having.It is negative that people have been deeply conscious that the use of fossil energy brought
The seriousness of impact.Therefore the proposal " restructured the use of energy, preserve our planet " has obtained the whole world
The consistent accreditation of every country.Only the extensive of regenerative resource utilizes to substitute tradition petrochemical industry
The energy, could promote the sustainable development of human society.Owing to solar energy is abundant and cleaning, right
Widely for energy related application, solaode very attractive.But, the most silica-based
Low with the electricity conversion of other solaodes, make the relatively costly of solaode, resistance
Its development and application are hindered.The optoelectronic transformation efficiency of solaode is defined as the electricity of solaode
Export the ratio of the solar energy incident with solar cell surface region.At actual solaode
In making, have several factors to limit the performance of device, thus solaode design and
The aspects such as the selection of material must take into the impact of these factors.
In order to improve the optoelectronic transformation efficiency of solaode, need to improve the sunken light of solaode
Technology.When light is through these structures, and light beam can scatter, and scattered light is with bigger incidence
Angle enters the absorbed layer of hull cell, due to the coefficient of refraction generally ratio surrounding material of absorbed layer material
The refractive index of matter is high, and the light beam of large-angle scatter is prone to be totally reflected in absorbed layer.Total reflection
Light beam vibrates in absorbed layer back and forth, until the generation photo-generated carrier that is absorbed by the absorption layer.So
By sunken light technology, the light that can be effectively improved thin-film solar cells absorbs, thus improves electricity
Pond transformation efficiency.
The light trapping structure of existing solar cell surface generally uses pyramid structure.And
The structure of existing solaode is led for metal electrode, ITO indium tin oxide transparent from top to bottom
Conductive film, N-type non-crystalline silicon layer, monolayer intrinsic amorphous silicon layer, P-type silicon substrate, back electrode.
Substrate surface passes through wet etching, forms the surface having pyramid repetitive, then at it
Upper using plasma chemical vapor deposition PECVD deposition monolayer intrinsic amorphous silicon layer and N-type
Amorphous silicon layer, forms the photoelectric conversion unit with pyramid light trapping structure.When light enters radio
Pool surface light can increase light having in battery surface light trapping structure in its surface continuous reflection
Effect movement length and order of reflection, thus the absorption of light is imitated by energization photoelectric conversion unit
Rate.But this structure is uneven and distributed more widely due to matte size so that substrate surface lacks
Sunken density is greatly increased, and is difficult to obtain high-quality matte at front surface and falls into light, is difficult to reduce lining
The end reflection coefficient to light, the intrinsic amorphous silicon layer passivation effect of single layer structure is poor simultaneously.
Summary of the invention
Therefore, present invention aims to the deficiencies in the prior art, it is proposed that a kind of based on
The silicon solar cell of organic passivation film, to reduce the reflection of light, improve the absorption of photon and
Utilize, concurrently form passivating structure, improve the transformation efficiency of solaode.
For achieving the above object, a kind of based on organic passivation film the silicon solar that the present invention proposes
Battery, including back electrode (6) and P-type silicon substrate (5), it is characterised in that: P-type silicon substrate (5)
Upper surface use silicon nanowire array structure, on this silicon nanowire array structure surface successively
It is laminated with branched polyethylene imine passivating film (4), N-type non-crystalline silicon layer (3) and indium tin oxide transparent to lead
Electrolemma (2), the top of nanowire array structure is provided with anelectrode (1).
As preferably, the thickness of described N-type non-crystalline silicon layer (3) is 10-50nm.
As preferably, in the silicon nanowire array on described P-type silicon substrate (5) surface, every silicon
A diameter of 40-80nm of nano wire, a length of 5-10 μm.
As preferably, described P-type silicon substrate (5) thickness is 200-400 μm.
As preferably, described anelectrode (1) uses thickness to be 20nm/20nm/40nm's
Ti/Pd/Ag multiple layer metal material.
As preferably, the metal aluminium that described back electrode (6) uses thickness to be 70-100nm
Material.
As preferably, the thickness of described branched polyethylene imine passivating film (4) is 1-3nm.
Due to the fact that P-type silicon substrate surface uses nano thread structure, there is good sunken light efficiency
Really, and improve the collection efficiency of carrier, the property of branched polyethylene imine passivating film passivation simultaneously
Can be excellent, improve the energy conversion efficiency of solaode.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of the present invention.
Detailed description of the invention
With reference to Fig. 1, the present invention provides following three embodiment:
Embodiment 1:
The solaode of this example includes anelectrode 1, Indium-tin Oxide Transparent Conductive Film 2, N
Type amorphous silicon layer 3, branched polyethylene imine passivating film (4), P-type silicon substrate 5 and back electrode 6,
Wherein back electrode 6 is positioned at P-type silicon substrate 5 back side, and the upper surface of P-type silicon substrate 5 uses and receives
Nanowire arrays structure, branched polyethylene imine passivating film (4), N-type non-crystalline silicon layer 3 and Indium sesquioxide.
Stannum nesa coating 2 is sequentially laminated on this nanowire array structure surface, and anelectrode 1 is arranged on
The top of nanowire array structure.Described anelectrode 1 uses thickness to be 20nm/20nm/40nm
Ti/Pd/Ag multiple layer metal material；The thickness of described N-type non-crystalline silicon layer 3 is 10nm；Institute
State in silicon nanowire array, a diameter of 40nm of every silicon nanowires, a length of 5 μm；Institute
Stating P-type silicon substrate 5 thickness is 200 μm；Described back electrode 6 uses thickness to be 60nm's
Metallic aluminum material, the thickness of described branched polyethylene imine passivating film (4) is 1nm.
Embodiment 2:
The solar battery structure of this example is same as in Example 1, i.e. uses silicon nanowire array
The solaode of structure, its Parameters variation is as follows:
The thickness of described N-type non-crystalline silicon layer 3 is 30nm；In described silicon nanowire array, often
A diameter of 60nm of root silicon nanowires, a length of 8 μm；Described P-type silicon substrate 5 thickness
Being 300 μm, the thickness of described branched polyethylene imine passivating film (4) is 2nm.
Embodiment 3:
The solar battery structure of this example is same as in Example 1, i.e. uses silicon nanowire array
The solaode of structure, its Parameters variation is as follows:
The thickness of described N-type non-crystalline silicon layer 3 is 50nm；In described silicon nanowire array, often
A diameter of 80nm of root silicon nanowires, a length of 10 μm；Described P-type silicon substrate 5 thickness
Being 400 μm, the thickness of described branched polyethylene imine passivating film (4) is 3nm.
The manufacture method of the solaode of embodiment 1-3 is: first table in P-type silicon substrate 5
Face forms nanowire array structure by dry etching or wet etching；Again at this nano-wire array
The surface spin coating branched polyethylene imine solution of structure forms branched polyethylene imine passivating film (4),
Then by PECVD formation of deposits N-type non-crystalline silicon layer 3, Indium sesquioxide. is formed by sputtering
Stannum nesa coating 2；Then the top at nanowire array structure is formed by electron beam evaporation
Multiple layer metal anelectrode 1；Finally form back electrode at P-type silicon substrate 5 back side evaporated metal aluminum
6.Due to the fact that P-type silicon substrate surface uses nano thread structure, there is good sunken light efficiency
Really, and improve the collection efficiency of carrier, the property of branched polyethylene imine passivating film passivation simultaneously
Can be excellent, improve the energy conversion efficiency of solaode.
Claims (7)
1. a silicon solar cell based on organic passivation film, including back electrode (6) and P-type silicon substrate
(5), it is characterised in that: the upper surface of P-type silicon substrate (5) uses silicon nanowire array structure, should
Branched polyethylene imine passivating film (4), N it is sequentially laminated with on silicon nanowire array structure surface
Type amorphous silicon layer (3) and Indium-tin Oxide Transparent Conductive Film (2), the top of nanowire array structure sets
There is anelectrode (1).
Silicon solar cell based on organic passivation film the most according to claim 1, its feature exists
In: the thickness of N-type non-crystalline silicon layer (3) is 10-50nm.
Silicon solar cell based on organic passivation film the most according to claim 1, its feature exists
In: in the silicon nanowire array on P-type silicon substrate (5) surface, every silicon nanowires a diameter of
40-80nm, a length of 5-10 μm.
Silicon solar cell based on organic passivation film the most according to claim 1, its feature exists
In: P-type silicon substrate (5) thickness is 200-400 μm.
Silicon solar cell based on organic passivation film the most according to claim 1, its feature exists
In: the Ti/Pd/Ag multiple layer metal material that anelectrode (1) uses thickness to be 20nm/20nm/40nm
Material.
Silicon solar cell based on organic passivation film the most according to claim 1, its feature exists
In: back electrode (6) uses thickness to be the metallic aluminum material of 70-100nm.
Silicon solar cell based on organic passivation film the most according to claim 1, its feature exists
In: the thickness of described branched polyethylene imine passivating film (4) is 1-3nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610217600.2A CN105845758A (en) | 2016-04-08 | 2016-04-08 | Silicon solar energy cell based on organic passivation film |
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| CN201610217600.2A CN105845758A (en) | 2016-04-08 | 2016-04-08 | Silicon solar energy cell based on organic passivation film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706248A (en) * | 2017-06-21 | 2018-02-16 | 吉林师范大学 | A kind of silicon nanostructure heterojunction solar battery and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6218048B1 (en) * | 1998-04-07 | 2001-04-17 | Fmc Corporation | Method of preliminarily heat treating positive electrodes of secondary lithium and lithium-ion Batteries and resulting positive electrodes and batteries |
| CN101262024A (en) * | 2008-03-26 | 2008-09-10 | 北京师范大学 | Silicon nano line/non crystal heterogeneous agglomeration solar battery |
| CN103346260A (en) * | 2013-07-24 | 2013-10-09 | 苏州大学 | Organic-inorganic hybrid solar cell with passivated organic thin film and preparation method thereof |
-
2016
- 2016-04-08 CN CN201610217600.2A patent/CN105845758A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6218048B1 (en) * | 1998-04-07 | 2001-04-17 | Fmc Corporation | Method of preliminarily heat treating positive electrodes of secondary lithium and lithium-ion Batteries and resulting positive electrodes and batteries |
| CN101262024A (en) * | 2008-03-26 | 2008-09-10 | 北京师范大学 | Silicon nano line/non crystal heterogeneous agglomeration solar battery |
| CN103346260A (en) * | 2013-07-24 | 2013-10-09 | 苏州大学 | Organic-inorganic hybrid solar cell with passivated organic thin film and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706248A (en) * | 2017-06-21 | 2018-02-16 | 吉林师范大学 | A kind of silicon nanostructure heterojunction solar battery and preparation method thereof |
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Application publication date: 20160810 |