CN104538470A - Silicon nanowire array based solar battery and preparation method thereof - Google Patents
Silicon nanowire array based solar battery and preparation method thereof Download PDFInfo
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- CN104538470A CN104538470A CN201510030922.1A CN201510030922A CN104538470A CN 104538470 A CN104538470 A CN 104538470A CN 201510030922 A CN201510030922 A CN 201510030922A CN 104538470 A CN104538470 A CN 104538470A
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- nanowire array
- silicon substrate
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- type silicon
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 109
- 239000010703 silicon Substances 0.000 title claims abstract description 109
- 239000002070 nanowire Substances 0.000 title claims abstract description 64
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 24
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 13
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- 238000001312 dry etching Methods 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 31
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 26
- 239000004411 aluminium Substances 0.000 claims description 26
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 18
- 239000008187 granular material Substances 0.000 claims description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 13
- 239000000243 solution Substances 0.000 claims description 13
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000006056 electrooxidation reaction Methods 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- -1 titanium-nickel-aluminium Chemical compound 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 2
- 239000007853 buffer solution Substances 0.000 claims description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 2
- 231100001240 inorganic pollutant Toxicity 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000007246 mechanism Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 238000010248 power generation Methods 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 230000002463 transducing effect Effects 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 34
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510030922.1A CN104538470A (en) | 2015-01-21 | 2015-01-21 | Silicon nanowire array based solar battery and preparation method thereof |
Applications Claiming Priority (1)
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CN201510030922.1A CN104538470A (en) | 2015-01-21 | 2015-01-21 | Silicon nanowire array based solar battery and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
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CN104538470A true CN104538470A (en) | 2015-04-22 |
Family
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Family Applications (1)
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CN201510030922.1A Pending CN104538470A (en) | 2015-01-21 | 2015-01-21 | Silicon nanowire array based solar battery and preparation method thereof |
Country Status (1)
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CN (1) | CN104538470A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105480931A (en) * | 2015-12-14 | 2016-04-13 | 淮阴工学院 | Visible light bidirectional absorber structure |
CN105655425A (en) * | 2016-04-08 | 2016-06-08 | 陈立新 | Photoelectric conversion device based on silicon nanostructure |
CN105789346A (en) * | 2016-04-13 | 2016-07-20 | 黄广明 | Solar cell based on silicon nanowires |
CN108649093A (en) * | 2018-07-16 | 2018-10-12 | 常熟理工学院 | A kind of silicon substrate radial nanowire solar cell and preparation method thereof |
CN109119513A (en) * | 2018-07-31 | 2019-01-01 | 哈尔滨工业大学(深圳) | A kind of silicon nanowires/silicon thin film heterojunction solar battery and preparation method thereof |
CN113651290A (en) * | 2021-07-07 | 2021-11-16 | 北京大学 | Novel silicon-based micro-nano structure modification method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080047604A1 (en) * | 2006-08-25 | 2008-02-28 | General Electric Company | Nanowires in thin-film silicon solar cells |
CN101229912A (en) * | 2007-12-26 | 2008-07-30 | 中国科学院上海微系统与信息技术研究所 | Method for preparing gallium nitride nano-wire array by using dry etching |
CN101369610A (en) * | 2008-09-23 | 2009-02-18 | 北京师范大学 | Novel structural silicon nanometer line solar battery |
CN204315594U (en) * | 2015-01-21 | 2015-05-06 | 中电投西安太阳能电力有限公司 | Based on the solar cell of silicon nanowire array |
-
2015
- 2015-01-21 CN CN201510030922.1A patent/CN104538470A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080047604A1 (en) * | 2006-08-25 | 2008-02-28 | General Electric Company | Nanowires in thin-film silicon solar cells |
CN101229912A (en) * | 2007-12-26 | 2008-07-30 | 中国科学院上海微系统与信息技术研究所 | Method for preparing gallium nitride nano-wire array by using dry etching |
CN101369610A (en) * | 2008-09-23 | 2009-02-18 | 北京师范大学 | Novel structural silicon nanometer line solar battery |
CN204315594U (en) * | 2015-01-21 | 2015-05-06 | 中电投西安太阳能电力有限公司 | Based on the solar cell of silicon nanowire array |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105480931A (en) * | 2015-12-14 | 2016-04-13 | 淮阴工学院 | Visible light bidirectional absorber structure |
CN105655425A (en) * | 2016-04-08 | 2016-06-08 | 陈立新 | Photoelectric conversion device based on silicon nanostructure |
CN105789346A (en) * | 2016-04-13 | 2016-07-20 | 黄广明 | Solar cell based on silicon nanowires |
CN108649093A (en) * | 2018-07-16 | 2018-10-12 | 常熟理工学院 | A kind of silicon substrate radial nanowire solar cell and preparation method thereof |
CN109119513A (en) * | 2018-07-31 | 2019-01-01 | 哈尔滨工业大学(深圳) | A kind of silicon nanowires/silicon thin film heterojunction solar battery and preparation method thereof |
CN113651290A (en) * | 2021-07-07 | 2021-11-16 | 北京大学 | Novel silicon-based micro-nano structure modification method |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Dong Peng Inventor after: Zhang Ting Inventor after: Guo Hui Inventor after: Huang Haili Inventor after: Miao Dongming Inventor after: Hu Yanfei Inventor after: Zhang Yuming Inventor before: Zhang Ting Inventor before: Guo Hui Inventor before: Huang Haili Inventor before: Miao Dongming Inventor before: Hu Yanfei Inventor before: Zhang Yuming |
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COR | Change of bibliographic data | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150422 |