CN105789346A - Solar cell based on silicon nanowires - Google Patents
Solar cell based on silicon nanowires Download PDFInfo
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- CN105789346A CN105789346A CN201610232225.9A CN201610232225A CN105789346A CN 105789346 A CN105789346 A CN 105789346A CN 201610232225 A CN201610232225 A CN 201610232225A CN 105789346 A CN105789346 A CN 105789346A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 239000002070 nanowire Substances 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 10
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 238000002161 passivation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 43
- 210000004027 cell Anatomy 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002803 fossil fuel Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000000415 inactivating effect Effects 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solar cell based on silicon nanowires. The solar cell comprises a back electrode (6) and a P-type silicon substrate (5), and is characterized in that: the upper surface of the P-type silicon substrate (5) adopts a silicon nanowire array structure, an i-type layer (4), an N-type amorphous silicon layer (3) and an indium tin oxide transparent conductive film (2) are laminated on the surface of the silicon nanowire array structure in sequence, the top end of the silicon nanowire array structure is provided with a positive electrode (1), the i-type layer (4) comprises a microcrystalline silicon intrinsic layer, an amorphous silicon germanium intrinsic layer, an amorphous silicon intrinsic layer and a microcrystalline silicon carbide intrinsic layer which are laminated on the surface of the silicon nanowire array structure in sequence. Since the surface of the P-type silicon substrate adopts the nanowire structure, the solar cell based on the silicon nanowires has good light trapping effect, increases carrier collection efficiency, changes structure and materials of the i-type layer, improves its passivation property, and improves energy conversion efficiency of the solar cell.
Description
Technical field
The present invention relates to the technical field of solaode, particularly relate to a kind of solaode based on silicon nanowires.
Background technology
Since the industrial revolution, along with industrialized development and progress, the demand of the energy also having been sharply increased, wherein fossil fuel is topmost energy and material.But tellurian total reserves of the fossil fuel energy are limited, and it is non-renewable energy resources, thus the whole world is faced with the Energy situation of sternness.The use procedure of fossil fuel discharges substantial amounts of toxic gas and carbon dioxide simultaneously, cause serious environmental pollution and greenhouse effect, cause unprecedented huge disaster to the living environment of the mankind.People have been deeply conscious the seriousness of the negative effect that the use of fossil energy brings.Therefore the proposal " restructured the use of energy, preserve our planet " has obtained the consistent accreditation of whole world every country.Only the extensive of regenerative resource utilizes to substitute tradition fossil energy, could promote the sustainable development of human society.Owing to solar energy is abundant and cleaning, for energy related application widely, solar device very attractive.But, silica-based and other solaodes electricity conversion is low at present, makes the relatively costly of solaode, hinders its development and application.The optoelectronic transformation efficiency of solaode is defined as the electricity output of solaode and the ratio of the solar energy of solar cell surface region incidence.In the making of actual solaode, there is several factors to limit the performance of device, thus in the selection etc. of the design of solaode and material, must take into the impact of these factors.
In order to improve the optoelectronic transformation efficiency of solaode, it is necessary to improve the sunken light technology of solaode.When light is through these structures, scattering can be there is in light beam, scattering light enters the absorbed layer of hull cell with bigger angle of incidence, and owing to the coefficient of refraction of absorbed layer material is generally high than the refractive index of surrounding material, the light beam of large-angle scatter is prone to be totally reflected in absorbed layer.Total reflection light beam vibrates back and forth in absorbed layer, until the generation photo-generated carrier that is absorbed by the absorption layer.So by falling into light technology, it is possible to the light being effectively improved thin-film solar cells absorbs, thus improving cell conversion efficiency.
The light trapping structure of existing solar cell surface generally adopts pyramid structure.And the structure of existing solaode is metal electrode, ITO indium tin oxide transparent conducting film, N-type non-crystalline silicon layer, monolayer intrinsic amorphous silicon layer, P-type silicon substrate, back electrode from top to bottom.Substrate surface passes through wet etching, form the surface having pyramid repetitive, using plasma chemical vapor deposition PECVD deposits monolayer intrinsic amorphous silicon layer and N-type non-crystalline silicon layer thereon again, forms the photoelectric conversion unit with pyramid light trapping structure.When light incidence battery surface light in its surface continuous reflection, can increase light effective exercise length in battery surface light trapping structure and order of reflection, thus the absorption efficiency that energization photoelectric conversion unit is to light.But this structure is uneven and distributed more widely due to matte size, substrate surface defect concentration is greatly increased, being difficult to obtain high-quality matte at front surface and fall into light, not easily reduce the substrate reflection coefficient to light, the intrinsic amorphous silicon layer passivation effect of single layer structure is poor simultaneously.
Summary of the invention
Therefore, present invention aims to the deficiencies in the prior art, it is proposed that a kind of solaode based on silicon nanowires, to reduce the reflection of light, improve the absorption to photon and utilization, optimize the structure of intrinsic amorphous silicon layer simultaneously, improve the transformation efficiency of solaode.
For achieving the above object, a kind of solaode based on silicon nanowires that the present invention proposes, including back electrode (6) and P-type silicon substrate (5), it is characterized in that: the upper surface of P-type silicon substrate (5) adopts silicon nanowire array structure, this silicon nanowire array structure surface is sequentially laminated with i type layer (4), N-type non-crystalline silicon layer (3) and Indium-tin Oxide Transparent Conductive Film (2), the top of nanowire array structure is provided with anelectrode (1), wherein i type layer (4) includes stacking gradually the microcrystalline silicon intrinsic layer on silicon nanowire array structure surface, amorphous silicon germanium intrinsic layer, amorphous silicon intrinsic layer and microcrystalline silicon carbide intrinsic layer.
As preferably, described N-type non-crystalline silicon layer (3) and the thickness of i type layer (4) are 10-50nm.
As preferably, in the silicon nanowire array on described P-type silicon substrate (5) surface, the diameter of every silicon nanowires is 40-80nm, and length is 5-10 μm.
As preferably, described P-type silicon substrate (5) thickness is 200-400 μm.
As preferably, the Ti/Pd/Ag multiple layer metal material that described anelectrode (1) adopts thickness to be 20nm/20nm/40nm.
As preferably, described back electrode (6) adopts thickness to be the metallic aluminum material of 70-100nm.
Due to the fact that P-type silicon substrate surface adopts nano thread structure, there is good sunken light effect, and improve the collection efficiency of carrier, change structure and the material of i type layer simultaneously, improve its inactivating performance, improve the energy conversion efficiency of solaode.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of the present invention.
Detailed description of the invention
With reference to Fig. 1, the present invention is given as three embodiments:
Embodiment 1:
The solaode of this example includes anelectrode 1, Indium-tin Oxide Transparent Conductive Film 2, N-type non-crystalline silicon layer 3, i type layer 4, P-type silicon substrate 5 and back electrode 6, wherein back electrode 6 is positioned at P-type silicon substrate 5 back side, the upper surface of P-type silicon substrate 5 adopts nanowire array structure, i type layer 4, N-type non-crystalline silicon layer 3 and Indium-tin Oxide Transparent Conductive Film 2 are sequentially laminated on this nanowire array structure surface, and anelectrode 1 is arranged on the top of nanowire array structure.The Ti/Pd/Ag multiple layer metal material that described anelectrode 1 adopts thickness to be 20nm/20nm/40nm；Described N-type non-crystalline silicon layer 3 is 10nm with i type layer 4 thickness；In described silicon nanowire array, the diameter of every silicon nanowires is 40nm, and length is 5 μm；Described P-type silicon substrate 5 thickness is 200 μm；The metallic aluminum material that described back electrode 6 adopts thickness to be 60nm, i type layer (4) includes the microcrystalline silicon intrinsic layer, amorphous silicon germanium intrinsic layer, amorphous silicon intrinsic layer and the microcrystalline silicon carbide intrinsic layer that stack gradually on silicon nanowire array structure surface.
Embodiment 2:
The solar battery structure of this example is identical with embodiment 1, namely adopts the solaode of silicon nanowire array structure, and its Parameters variation is as follows:
Described N-type non-crystalline silicon layer 3 is 30nm with i type layer 4 thickness；In described silicon nanowire array, the diameter of every silicon nanowires is 60nm, and length is 8 μm；Described P-type silicon substrate 5 thickness is 300 μm.
Embodiment 3:
The solar battery structure of this example is identical with embodiment 1, namely adopts the solaode of silicon nanowire array structure, and its Parameters variation is as follows:
Described N-type non-crystalline silicon layer 3 is 50nm with i type layer 4 thickness；In described silicon nanowire array, the diameter of every silicon nanowires is 80nm, and length is 10 μm；Described P-type silicon substrate 5 thickness is 400 μm.
The manufacture method of the solaode of embodiment 1-3 is: first form nanowire array structure at P-type silicon substrate 5 upper surface by dry etching or wet etching；Pass sequentially through PECVD deposit again on the surface of this nanowire array structure and form microcrystalline silicon intrinsic layer, amorphous silicon germanium intrinsic layer, amorphous silicon intrinsic layer and microcrystalline silicon carbide intrinsic layer, to form i type layer 4, then pass through PECVD formation of deposits N-type non-crystalline silicon layer 3, by sputtering formation Indium-tin Oxide Transparent Conductive Film 2；Then multiple layer metal anelectrode 1 is formed on the top of nanowire array structure by electron beam evaporation；Last at P-type silicon substrate 5 back side evaporated metal aluminum formation back electrode 6.Due to the fact that P-type silicon substrate surface adopts nano thread structure, there is good sunken light effect, and improve the collection efficiency of carrier, change structure and the material of i type layer simultaneously, improve its inactivating performance, improve the energy conversion efficiency of solaode.
Claims (6)
1. the solaode based on silicon nanowires, including back electrode (6) and P-type silicon substrate (5), it is characterized in that: the upper surface of P-type silicon substrate (5) adopts silicon nanowire array structure, this silicon nanowire array structure surface is sequentially laminated with i type layer (4), N-type non-crystalline silicon layer (3) and Indium-tin Oxide Transparent Conductive Film (2), the top of nanowire array structure is provided with anelectrode (1), wherein i type layer (4) includes stacking gradually the microcrystalline silicon intrinsic layer on silicon nanowire array structure surface, amorphous silicon germanium intrinsic layer, amorphous silicon intrinsic layer and microcrystalline silicon carbide intrinsic layer.
2. the solaode based on silicon nanowires according to claim 1, it is characterised in that: the thickness of N-type non-crystalline silicon layer (3) and i type layer (4) is 10-50nm.
3. the solaode based on silicon nanowires according to claim 1, it is characterised in that: in the silicon nanowire array on P-type silicon substrate (5) surface, the diameter of every silicon nanowires is 40-80nm, and length is 5-10 μm.
4. the solaode based on silicon nanowires according to claim 1, it is characterised in that: P-type silicon substrate (5) thickness is 200-400 μm.
5. the solaode based on silicon nanowires according to claim 1, it is characterised in that: the Ti/Pd/Ag multiple layer metal material that anelectrode (1) adopts thickness to be 20nm/20nm/40nm.
6. the solaode based on silicon nanowires according to claim 1, it is characterised in that: back electrode (6) adopts thickness to be the metallic aluminum material of 70-100nm.
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| CN201610232225.9A CN105789346A (en) | 2016-04-13 | 2016-04-13 | Solar cell based on silicon nanowires |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107093644A (en) * | 2017-04-21 | 2017-08-25 | 江苏天雄电气自动化有限公司 | A kind of photovoltaic generating system with reactive power compensation system |
| CN107394013A (en) * | 2017-07-26 | 2017-11-24 | 卡姆丹克太阳能（江苏）有限公司 | A kind of preparation method of SiGe black phosphorus alkene PIN heterojunction solar batteries |
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