WO2010111970A1 - Transparent conductive substrate for solar cells - Google Patents

Transparent conductive substrate for solar cells Download PDF

Info

Publication number
WO2010111970A1
WO2010111970A1 PCT/CN2010/071542 CN2010071542W WO2010111970A1 WO 2010111970 A1 WO2010111970 A1 WO 2010111970A1 CN 2010071542 W CN2010071542 W CN 2010071542W WO 2010111970 A1 WO2010111970 A1 WO 2010111970A1
Authority
WO
WIPO (PCT)
Prior art keywords
oxide layer
fluorine
transparent conductive
solar cell
conductive substrate
Prior art date
Application number
PCT/CN2010/071542
Other languages
French (fr)
Chinese (zh)
Inventor
白京华
王杏娟
Original Assignee
中国南玻集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中国南玻集团股份有限公司 filed Critical 中国南玻集团股份有限公司
Publication of WO2010111970A1 publication Critical patent/WO2010111970A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a transparent conductive substrate for a solar cell, and more particularly to a transparent conductive substrate for a solar cell in which a transparent conductive film is deposited on a transparent substrate.
  • Solar energy generally refers to the radiant energy of sunlight.
  • the "hydrogen” that is carried out inside the sun becomes a nuclear reaction of " ⁇ ", which constantly releases huge energy and continuously radiates energy to the space.
  • This energy is solar energy.
  • This kind of nuclear fusion reaction inside the sun can last for several billion to tens of billions of years. It can be considered as an inexhaustible source of energy for human beings.
  • the radiant power emitted by the Sun into space is 3.8 ⁇ 10 23 kW, of which 2 billion is reaching the Earth's atmosphere. 30% of the solar energy reaching the Earth's atmosphere is reflected by the atmosphere, 23% is absorbed by the atmosphere, and the rest reaches the surface of the Earth. Its power is 800 billion kW, which means that the sun's energy per second is equivalent to burning 5 million.
  • the heat released by tons of coal. Therefore, the amount of solar energy available on the earth is also very large.
  • solar photovoltaic power generation technology The technology for converting solar radiant energy into electrical energy by a conversion device is called solar photovoltaic power generation technology, and the photoelectric conversion device is usually photoelectrically converted by utilizing the photovoltaic effect principle of a semiconductor device, and is therefore also called solar photovoltaic technology.
  • Solar cells are devices that use the principle of photoelectric conversion to convert solar radiation into electrical energy through semiconductor materials. In order to maximize the use of solar radiation, it is necessary to maximize the photoelectric conversion efficiency of solar cells.
  • Silicon-based thin film solar cells mainly include amorphous silicon ( ⁇ -Si:H) batteries, microcrystalline silicon ( ⁇ c-Si:H) batteries, and amorphous/micromorphic cells.
  • ⁇ -Si:H amorphous silicon
  • ⁇ c-Si:H microcrystalline silicon
  • amorphous/micromorphic cells For thin-film solar cells, increasing the utilization of light in the battery, that is, increasing the photoelectric conversion efficiency of the solar cell, is the most important point, which requires increasing the optical path of the light in the functional layer of the solar cell.
  • the optical bandwidth of ⁇ -Si:H is about 1.7 eV, and its absorption coefficient is higher in the short-wave direction.
  • the optical bandwidth of ⁇ c-Si:H is about 1.1 eV, and the absorption coefficient is higher in the long-wave direction, from 300 nm to 1200 nm. In the wavelength range, it can absorb into the long-wavelength region of the infrared, which makes the solar spectrum better utilized
  • a transparent conductive substrate for a solar cell used as a transparent electrode in a solar cell can be obtained by depositing a transparent conductive film on a substrate having good light transmittance, and a material having good light transmittance such as glass can be usually used as the transparent substrate.
  • the transparent conductive substrate for a solar cell is required to have not only good electrical conductivity but also an increase in the amount of light reaching the photoelectric conversion layer in order to increase the conversion efficiency of sunlight.
  • a transparent conductive substrate for a solar cell comprising: a transparent substrate; and a metal oxide layer, a silicon oxide layer and a fluorine-doped tin oxide layer sequentially superposed on the transparent substrate, the metal oxide layer being undoped with fluorine, The fluorine-doped tin oxide layer is uniformly doped with fluorine.
  • the transparent conductive substrate for a solar cell can have a good electrical conductivity and increase the amount of light reaching the photoelectric conversion layer. Uniform doping also helps to simplify the coating process.
  • the metal oxide layer has a refractive index greater than 1.8.
  • the metal oxide layer is one or more selected from the group consisting of tin oxide, titanium oxide, indium oxide, and zinc oxide.
  • the metal oxide layer has a thickness of 21 to 30 nm.
  • a laminated metal oxide layer and a silicon oxide layer are provided between the fluorine-doped tin oxide layer and the transparent substrate, and the metal oxide layer and the silicon oxide layer are used as a transparent film to suppress occurrence of irregularities of reflection interference color.
  • the silicon oxide layer has a thickness of 30 to 40 nm.
  • the presence of the silicon oxide layer can further inhibit the diffusion of the alkali metal cations on the transparent substrate to the fluorine-doped tin oxide layer.
  • the fluorine-doped tin oxide layer has a fluorine concentration of 1 mol% to 4 mol% relative to tin oxide. Within this fluorine concentration, the fluorine-doped tin oxide layer has a low resistance.
  • the fluorine-doped tin oxide layer has a thickness of 400 nm to 599 nm, more preferably 500 nm to 599 nm. In this thickness range, it is beneficial to save the raw material cost, at the same time eliminate the residual stress as much as possible, increase the adhesion, and make the surface of the fluorine-doped tin oxide layer have a high-quality suede structure, and obtain a high haze value.
  • the side opposite to the silicon oxide layer of the fluorine-doped tin oxide layer is a textured structure of irregularities.
  • the presence of the uneven textured suede structure on the surface of the fluorine-doped tin oxide layer can improve the haze of the transparent conductive substrate for a solar cell due to scattering of light.
  • the surface of the fluorine-doped tin oxide layer has a rugged suede structure, and the light can be refracted at the interface between the fluorine-doped tin oxide layer and the photoelectric conversion layer of the solar cell to enter the solar cell photoelectric conversion layer.
  • the surface of the fluorine-doped tin oxide layer having a rugged pile structure can make the interface of the solar cell photoelectric conversion layer formed on the solar cell and the semiconductor layer formed on the semiconductor layer become uneven, and light is likely to occur at the interface. Scattering, which increases the optical path of light in the functional layer of the solar cell, increasing the photoelectric conversion efficiency.
  • the uneven structure on the surface of the uniformly doped fluorine-doped fluorine-doped tin oxide layer can make the haze value deviation of the entire transparent conductive substrate small, which can reduce the scattering of light at the interface between the fluorine-doped tin oxide layer and the solar cell photoelectric conversion layer.
  • the fluorine-doped tin oxide layer has a sheet resistance of 9 ⁇ / ⁇ to 11 ⁇ / ⁇ , or a light transmittance of >81% in a wavelength range of 300 nm to 1200 nm, or a haze of 10% to 30%, or
  • the sum of the maximum profile peak height and the maximum profile valley depth is from 100 nm to 500 nm, more preferably from 200 nm to 400 nm.
  • FIG. 1 is a schematic cross-sectional view showing a transparent conductive substrate for a solar cell according to an embodiment.
  • the transparent conductive substrate for a solar cell includes a transparent substrate 10, a metal oxide layer 20, a silicon oxide layer 30, and a fluorine-doped tin oxide layer 40 which are sequentially stacked.
  • the transparent substrate 10 is usually made of glass having good light transmittance.
  • the refractive index of the glass is usually from 1.5 to 1.7 in the wavelength range of 300 nm to 1200 nm.
  • soda lime glass having a refractive index of 1.52 is used as a transparent substrate of a solar cell transparent conductive substrate.
  • the metal oxide layer 20 is a transparent metal oxide having a refractive index of more than 1.8, and may be, for example, one or more of tin oxide, titanium oxide, indium oxide, and zinc oxide.
  • the metal oxide layer 20 may be a single layer structure of any of the above metal oxides, or may be a single layer structure formed by mixing a plurality of the above oxides, or may be a metal oxide formed by laminating a plurality of different metal oxide sublayers.
  • Object layer 20 In view of the action of the F - ion on the alkali metal cation on the glass substrate, the metal oxide layer 20 deposited on the adjacent transparent substrate 10 is not doped with fluorine.
  • the metal oxide layer 20 has a thickness of 10 nm to 50 nm, preferably 21 nm to 30 nm.
  • the refractive index of silicon oxide is 1.45 to 1.65, which is very close to the refractive index of glass as the transparent substrate 10. If the fluorine-doped tin oxide layer 40 is directly deposited on the transparent substrate 10 as a transparent conductive electrode, it is due to tin oxide.
  • the refractive index of 1.8 to 2.5 is relatively large with respect to the transparent substrate 10, causing the reflection of incident sunlight to interfere with the occurrence of color irregularities. Therefore, a laminated metal oxide layer 20 and a silicon oxide layer 30 are provided between the fluorine-doped tin oxide layer 40 and the transparent substrate 10, and the metal oxide layer 20 and the silicon oxide layer 30 function as a transparent film to suppress reflection interference color. Irregularity occurs.
  • the presence of the silicon oxide layer 30 can further inhibit diffusion of alkali metal cations on the transparent substrate 10 to the fluorine-doped tin oxide layer 40.
  • the silicon oxide layer 30 has a thickness of 10 nm to 50 nm, preferably 30 to 40 nm.
  • Fluorine-doped tin oxide layer 40 Fluorine-doped SnO 2 conducting mechanism in the film is doped with fluorine SnO 2, SnO 2 O crystal lattice in the regular portion 2 is F - replaced, n Sn 3+ provides a non-covalently moving electron and becomes an ionization center.
  • the original band structure changes, the impurity level is in the original forbidden band, but it is very close to the conduction band, so the conductivity is greatly improved.
  • increasing the SnO 2 doped with fluorine increased amount of SnO 2 thin film resistance will first decrease.
  • the light-scattering transmittance of the film in the wavelength range of 300 nm to 1200 nm decreases, thereby exhibiting a decrease in the haze value of the film. Therefore, in order to make the transparent conductive substrate for a solar cell have good electrical conductivity and increase the amount of light reaching the photoelectric conversion layer, it is necessary to make the fluorine-doped tin oxide layer 40 have low electric resistance and to scatter and absorb light in a wavelength range of 300 nm to 1200 nm. less.
  • the fluorine-doped tin oxide layer 40 if the thickness is large, the absorption of the near-infrared light by the fluorine-doped tin oxide layer 40 is increased, which is obviously not suitable for use as a transparent conductive film for a transparent conductive substrate for a solar cell. .
  • concentration of doped fluorine to reduce the absorption of near-infrared light by the fluorine-doped tin oxide layer 40, at least one more coating head device is required, so that the thickness of the tin oxide layer of the fluorine-doped concentration is changed. Large, the cost of raw materials is high, and the control process is complicated.
  • the thickness of the fluorine-doped tin oxide layer 40 should not be too large.
  • the surface of the fluorine-doped tin oxide layer 40 has a high-quality suede structure, and a high haze value is obtained, and the thickness of the fluorine-doped tin oxide layer 40 cannot be too small, so the fluorine-doped tin oxide layer is formed.
  • the thickness control of 40 is relatively strict.
  • the thickness of the fluorine-doped tin oxide layer 40 is preferably controlled in the range of 400 nm to 599 nm, and the thickness is preferably in the range of 500 nm to 599 nm.
  • the fluorine in the fluorine-doped tin oxide layer 40 may be uniformly doped in the tin oxide in the thickness, wherein the fluorine concentration is preferably from 1 mol% to 4 mol% with respect to the tin oxide. In this fluorine concentration, the fluorine-doped tin oxide layer has a low resistance, which can reach 7 ⁇ / ⁇ to 15 ⁇ / ⁇ , and more preferably 9 ⁇ / ⁇ to 11 ⁇ / ⁇ .
  • the crystallite size of the fluorine-doped tin oxide layer 40 is large, and the surface of the film has a large degree of unevenness, so that the film has a large haze, and the haze value is greater than 10% from the value, preferably in 10% to 30%.
  • the fluorine-doped tin oxide layer 40 has a light transmittance of >81% in a wavelength range of 300 nm to 1200 nm, preferably a light transmittance of >85%.
  • the surface topography of the fluorine-doped tin oxide layer 40 was measured by atomic force microscopy (AFM) and scanning electron microscopy (SEM), and it was found that the fluorine-doped tin oxide layer 40 was on the opposite side to the silicon oxide layer 30 as shown in FIG.
  • the entire surface has a rugged pile structure, and the sum of the maximum profile peak height and the maximum profile valley depth in the sampling length of the atomic force microscope test surface in a single direction is from 100 nm to 500 nm, more preferably from 200 nm to 400 nm.
  • the presence of the uneven textured surface on the surface of the fluorine-doped tin oxide layer 40 can improve the haze of the transparent conductive substrate for a solar cell due to scattering of light.
  • the surface of the fluorine-doped tin oxide layer 40 has a rugged suede structure, and the light can be refracted at the interface between the fluorine-doped tin oxide layer 40 and the photoelectric conversion layer of the solar cell to enter the solar cell photoelectric conversion layer.
  • the surface of the fluorine-doped tin oxide layer 40 having a rugged pile structure can make the interface of the solar cell photoelectric conversion layer formed on the solar cell layer and the semiconductor layer formed on the semiconductor layer uneven, and the light is easily formed at the interface.
  • the uneven structure on the surface of the fluorine-doped fluorine-doped tin oxide layer 40 can make the haze value deviation of the entire transparent conductive substrate small, which can reduce the interface between the fluorine-doped tin oxide layer 40 and the solar cell photoelectric conversion layer. scattering.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A transparent conductive substrate for solar cells comprises a transparent substrate and a metal oxide layer, a silicon oxide layer and a fluorine-doped tin oxide layer which are laminated on the transparent substrate in sequence. Said metal oxide layer is not doped with fluorine, and said fluorine-doped tin oxide layer is uniformly doped with fluorine. By uniformly doping fluorine in the fluorine-doped tin oxide layer, the transparent conductive substrate for solar cells has good conductivity and the quantity of light reaching the photoelectric conversion layer is increased. Uniform doping is also beneficial for simplifying the process of film coating.

Description

太阳能电池用透明导电基板  Transparent conductive substrate for solar cells 技术领域Technical field
本发明涉及太阳能电池用透明导电基板，尤其是在透明基板上沉积透明导电性薄膜的太阳能电池用透明导电基板。  The present invention relates to a transparent conductive substrate for a solar cell, and more particularly to a transparent conductive substrate for a solar cell in which a transparent conductive film is deposited on a transparent substrate.
背景技术Background technique
太阳能一般指太阳光的辐射能量。在太阳内部进行的"氢"聚变成"氦"的原子核反应，不停地释放出巨大的能量，并不断向宇宙空间辐射能量，这种能量就是太阳能。太阳内部的这种核聚变反应，可以维持几十亿至上百亿年的时间，对于人类来说几乎可以认为是取之不尽用之不竭的能源。太阳向宇宙空间发射的辐射功率为3.8×1023kW的辐射值，其中20亿分之一到达地球大气层。到达地球大气层的太阳能，30%被大气层反射，23%被大气层吸收，其余的到达地球表面，其功率为800000亿kW，也就是说太阳每秒钟照射到地球上的能量就相当于燃烧500万吨煤释放的热量。因此，地球上可利用的太阳能的量也是非常巨大的。Solar energy generally refers to the radiant energy of sunlight. The "hydrogen" that is carried out inside the sun becomes a nuclear reaction of "氦", which constantly releases huge energy and continuously radiates energy to the space. This energy is solar energy. This kind of nuclear fusion reaction inside the sun can last for several billion to tens of billions of years. It can be considered as an inexhaustible source of energy for human beings. The radiant power emitted by the Sun into space is 3.8 × 10 23 kW, of which 2 billion is reaching the Earth's atmosphere. 30% of the solar energy reaching the Earth's atmosphere is reflected by the atmosphere, 23% is absorbed by the atmosphere, and the rest reaches the surface of the Earth. Its power is 800 billion kW, which means that the sun's energy per second is equivalent to burning 5 million. The heat released by tons of coal. Therefore, the amount of solar energy available on the earth is also very large.
除了太阳能热水器等可以直接利用太阳能外，大多数太阳能的利用还需要将太阳能转换为电能。伴随着世界能源需求的日益增大，利用可再生的太阳能，实现无污染、无公害的干净的能源世界，这对于目前世界上大多数国家来说都具有非常大的吸引力。通过转换装置把太阳辐射能转换成电能利用的技术称为太阳能光发电技术，光电转换装置通常是利用半导体器件的光伏效应原理进行光电转换的，因此又称太阳能光伏技术。太阳能电池是利用光电转换原理使太阳的辐射光通过半导体物质转变为电能的一种器件，为了最大限度地使用太阳辐射，必须最大可能地提高太阳能电池的光电转换效率。 In addition to solar water heaters and other direct use of solar energy, most solar energy needs to convert solar energy into electrical energy. Along with the increasing demand for energy in the world, the use of renewable solar energy to achieve a clean, energy-free world of clean energy is very attractive to most countries in the world. The technology for converting solar radiant energy into electrical energy by a conversion device is called solar photovoltaic power generation technology, and the photoelectric conversion device is usually photoelectrically converted by utilizing the photovoltaic effect principle of a semiconductor device, and is therefore also called solar photovoltaic technology. Solar cells are devices that use the principle of photoelectric conversion to convert solar radiation into electrical energy through semiconductor materials. In order to maximize the use of solar radiation, it is necessary to maximize the photoelectric conversion efficiency of solar cells.
硅基薄膜太阳能电池，主要包括非晶硅（α-Si：H）电池，微晶硅（μc-Si：H）电池以及非晶/微晶叠层（micromorph）电池。对于薄膜太阳能电池来说，增加光在电池中的利用率即提高太阳能电池的光电转换效率是最重要的一点，这就要求增加光在太阳能电池功能层的光程。α-Si：H的光学带宽为1.7eV左右，其吸收系数在短波方向较高；而μc-Si：H的光学带宽约为1.1eV，其吸收系数在长波方向较高，在300nm～1200nm的波长范围内，能吸收到红外长波区域，这就使太阳光谱能得到更好利用。 Silicon-based thin film solar cells mainly include amorphous silicon (α-Si:H) batteries, microcrystalline silicon (μc-Si:H) batteries, and amorphous/micromorphic cells. For thin-film solar cells, increasing the utilization of light in the battery, that is, increasing the photoelectric conversion efficiency of the solar cell, is the most important point, which requires increasing the optical path of the light in the functional layer of the solar cell. The optical bandwidth of α-Si:H is about 1.7 eV, and its absorption coefficient is higher in the short-wave direction. The optical bandwidth of μc-Si:H is about 1.1 eV, and the absorption coefficient is higher in the long-wave direction, from 300 nm to 1200 nm. In the wavelength range, it can absorb into the long-wavelength region of the infrared, which makes the solar spectrum better utilized.
此外，在太阳能电池中作为透明电极使用的太阳能电池用透明导电基板可以通过在透光性良好的基板上沉积透明导电性薄膜来得到，通常可以选用透光性良好的材料例如玻璃作为透明基板。作为太阳能电池用透明导电基板不仅需要具有良好的导电性能，更需要为了提高太阳光的转换效率而增多到达光电转换层的光量。 Further, a transparent conductive substrate for a solar cell used as a transparent electrode in a solar cell can be obtained by depositing a transparent conductive film on a substrate having good light transmittance, and a material having good light transmittance such as glass can be usually used as the transparent substrate. The transparent conductive substrate for a solar cell is required to have not only good electrical conductivity but also an increase in the amount of light reaching the photoelectric conversion layer in order to increase the conversion efficiency of sunlight.
技术问题technical problem
有鉴于此，有必要提供一种具有良好的导电性能及增加到达光电转换层的光量的太阳能电池用透明导电基板。  In view of the above, it is necessary to provide a transparent conductive substrate for a solar cell which has good electrical conductivity and increases the amount of light reaching the photoelectric conversion layer.
技术解决方案Technical solution
一种太阳能电池用透明导电基板，包括透明基底及依次叠加在所述透明基底上的金属氧化物层、氧化硅层和掺氟氧化锡层，所述金属氧化物层未掺杂氟，所述掺氟氧化锡层中均匀掺杂氟。 A transparent conductive substrate for a solar cell, comprising: a transparent substrate; and a metal oxide layer, a silicon oxide layer and a fluorine-doped tin oxide layer sequentially superposed on the transparent substrate, the metal oxide layer being undoped with fluorine, The fluorine-doped tin oxide layer is uniformly doped with fluorine.
通过在掺氟氧化锡层中均匀掺杂氟，可以使太阳能电池用透明导电基板具有良好的导电性能的同时，增加到达光电转换层的光量。均匀掺杂也有利于简化镀膜工序。 By uniformly doping fluorine in the fluorine-doped tin oxide layer, the transparent conductive substrate for a solar cell can have a good electrical conductivity and increase the amount of light reaching the photoelectric conversion layer. Uniform doping also helps to simplify the coating process.
优选地，所述金属氧化物层的折射率大于1.8。所述金属氧化物层为氧化锡、氧化钛、氧化铟和氧化锌中的一种或两种以上。所述金属氧化物层的厚度为21～30nm。在掺氟氧化锡层和透明基底之间设有叠层的金属氧化物层和氧化硅层，金属氧化物层和氧化硅层作为透明薄膜以抑制反射干扰色的不规则性的发生。 Preferably, the metal oxide layer has a refractive index greater than 1.8. The metal oxide layer is one or more selected from the group consisting of tin oxide, titanium oxide, indium oxide, and zinc oxide. The metal oxide layer has a thickness of 21 to 30 nm. A laminated metal oxide layer and a silicon oxide layer are provided between the fluorine-doped tin oxide layer and the transparent substrate, and the metal oxide layer and the silicon oxide layer are used as a transparent film to suppress occurrence of irregularities of reflection interference color.
优选地，所述氧化硅层的厚度为30～40nm。氧化硅层的存在可以进一步抑制透明基底上碱金属阳离子向掺氟氧化锡层扩散。 Preferably, the silicon oxide layer has a thickness of 30 to 40 nm. The presence of the silicon oxide layer can further inhibit the diffusion of the alkali metal cations on the transparent substrate to the fluorine-doped tin oxide layer.
优选地，所述掺氟氧化锡层中氟浓度相对氧化锡为1mol%～4mol%。在这个氟浓度内，掺氟氧化锡层面电阻较低。 Preferably, the fluorine-doped tin oxide layer has a fluorine concentration of 1 mol% to 4 mol% relative to tin oxide. Within this fluorine concentration, the fluorine-doped tin oxide layer has a low resistance.
优选地，所述掺氟氧化锡层的厚度为400nm～599nm，更好为500nm～599nm。在这个厚度范围内，有利于节约原料成本，同时尽量消除残留应力，增加附着力，使掺氟氧化锡层表面具有优质的绒面结构，得到高的雾度值。 Preferably, the fluorine-doped tin oxide layer has a thickness of 400 nm to 599 nm, more preferably 500 nm to 599 nm. In this thickness range, it is beneficial to save the raw material cost, at the same time eliminate the residual stress as much as possible, increase the adhesion, and make the surface of the fluorine-doped tin oxide layer have a high-quality suede structure, and obtain a high haze value.
优选地，所述掺氟氧化锡层与所述氧化硅层相反的一侧为凹凸的绒面结构。 掺氟氧化锡层表面的凹凸不平的绒面结构的存在，可以使太阳能电池用透明导电基板的雾度因光的散射而提高。而在掺氟氧化锡层表面具有凹凸不平的绒面结构，可以使光在掺氟氧化锡层和太阳能电池的光电转换层的界面发生折射后进入太阳能电池光电转换层。另外，掺氟氧化锡层表面具有凹凸不平的绒面结构可以使在其上形成的太阳能电池光电转换层和半导体层上形成的背电极层界面也变得凹凸不平，则光在该界面容易发生散射，这可以增加光在太阳能电池功能层中的光程，增加光电转换效率。而均匀掺杂氟的掺氟氧化锡层表面的凹凸结构可以使整个透明导电性基板的雾度值偏差较小，这可以减少光在掺氟氧化锡层与太阳能电池光电转换层界面的散射。 Preferably, the side opposite to the silicon oxide layer of the fluorine-doped tin oxide layer is a textured structure of irregularities. The presence of the uneven textured suede structure on the surface of the fluorine-doped tin oxide layer can improve the haze of the transparent conductive substrate for a solar cell due to scattering of light. On the other hand, the surface of the fluorine-doped tin oxide layer has a rugged suede structure, and the light can be refracted at the interface between the fluorine-doped tin oxide layer and the photoelectric conversion layer of the solar cell to enter the solar cell photoelectric conversion layer. In addition, the surface of the fluorine-doped tin oxide layer having a rugged pile structure can make the interface of the solar cell photoelectric conversion layer formed on the solar cell and the semiconductor layer formed on the semiconductor layer become uneven, and light is likely to occur at the interface. Scattering, which increases the optical path of light in the functional layer of the solar cell, increasing the photoelectric conversion efficiency. The uneven structure on the surface of the uniformly doped fluorine-doped fluorine-doped tin oxide layer can make the haze value deviation of the entire transparent conductive substrate small, which can reduce the scattering of light at the interface between the fluorine-doped tin oxide layer and the solar cell photoelectric conversion layer.
优选地，所述掺氟氧化锡层的面电阻为9Ω/□～11Ω/□、或在300nm～1200nm的波长范围内的透光率＞81％、或雾度为10％～30％、或最大轮廓峰高和最大轮廓谷深的和为100nm～500nm,更好为200nm～400nm。 Preferably, the fluorine-doped tin oxide layer has a sheet resistance of 9 Ω/□ to 11 Ω/□, or a light transmittance of >81% in a wavelength range of 300 nm to 1200 nm, or a haze of 10% to 30%, or The sum of the maximum profile peak height and the maximum profile valley depth is from 100 nm to 500 nm, more preferably from 200 nm to 400 nm.
有益效果Beneficial effect
附图说明DRAWINGS
图1为一实施例的太阳能电池用透明导电基板的截面示意图。  1 is a schematic cross-sectional view showing a transparent conductive substrate for a solar cell according to an embodiment.
本发明的最佳实施方式BEST MODE FOR CARRYING OUT THE INVENTION
如图1所示，其为一实施例的太阳能电池用透明导电基板的截面图。太阳能电池用透明导电基板包括依次叠加的透明基底10、金属氧化物层20、氧化硅层30及掺氟氧化锡层40。 As shown in Fig. 1, it is a cross-sectional view of a transparent conductive substrate for a solar cell according to an embodiment. The transparent conductive substrate for a solar cell includes a transparent substrate 10, a metal oxide layer 20, a silicon oxide layer 30, and a fluorine-doped tin oxide layer 40 which are sequentially stacked.
透明基底10通常采用透光性良好的玻璃。在300nm～1200nm的波长范围内，玻璃的折射率通常为1.5～1.7。本实施例中，采用折射率为1.52的钠钙玻璃作为太阳能电池透明导电性基板透明基底。 The transparent substrate 10 is usually made of glass having good light transmittance. The refractive index of the glass is usually from 1.5 to 1.7 in the wavelength range of 300 nm to 1200 nm. In this embodiment, soda lime glass having a refractive index of 1.52 is used as a transparent substrate of a solar cell transparent conductive substrate.
金属氧化物层20采用折射率大于1.8的透明金属氧化物，例如可以是氧化锡、氧化钛、氧化铟和氧化锌中的一种或两种以上。金属氧化物层20可以是上述某种金属氧化物的单层结构，也可以是上述多种氧化物混合形成的单层结构，还可以是多个不同的金属氧化物子层层叠形成的金属氧化物层20。考虑到F－离子对玻璃基板上碱金属阳离子的作用，在邻接透明基底10上沉积的金属氧化物层20中未掺杂氟。金属氧化物层20的厚度为10nm～50nm，优选为21nm～30nm。The metal oxide layer 20 is a transparent metal oxide having a refractive index of more than 1.8, and may be, for example, one or more of tin oxide, titanium oxide, indium oxide, and zinc oxide. The metal oxide layer 20 may be a single layer structure of any of the above metal oxides, or may be a single layer structure formed by mixing a plurality of the above oxides, or may be a metal oxide formed by laminating a plurality of different metal oxide sublayers. Object layer 20. In view of the action of the F - ion on the alkali metal cation on the glass substrate, the metal oxide layer 20 deposited on the adjacent transparent substrate 10 is not doped with fluorine. The metal oxide layer 20 has a thickness of 10 nm to 50 nm, preferably 21 nm to 30 nm.
氧化硅的折射率为1.45～1.65，这跟用玻璃作为透明基底10的折射率很接近，如果直接在透明基底10上沉积掺氟氧化锡层40作为透明导电性电极，则会因为氧化锡的折射率为1.8～2.5相对透明基底10要大而引起入射的太阳光的反射干扰色的不规则性的发生。因此，在掺氟氧化锡层40和透明基底10之间设有叠层的金属氧化物层20和氧化硅层30，金属氧化物层20和氧化硅层30作为透明薄膜以抑制反射干扰色的不规则性的发生。氧化硅层30的存在可以进一步抑制透明基底10上碱金属阳离子向掺氟氧化锡层40扩散。氧化硅层30的厚度为10nm～50nm，优选为30～40nm。 The refractive index of silicon oxide is 1.45 to 1.65, which is very close to the refractive index of glass as the transparent substrate 10. If the fluorine-doped tin oxide layer 40 is directly deposited on the transparent substrate 10 as a transparent conductive electrode, it is due to tin oxide. The refractive index of 1.8 to 2.5 is relatively large with respect to the transparent substrate 10, causing the reflection of incident sunlight to interfere with the occurrence of color irregularities. Therefore, a laminated metal oxide layer 20 and a silicon oxide layer 30 are provided between the fluorine-doped tin oxide layer 40 and the transparent substrate 10, and the metal oxide layer 20 and the silicon oxide layer 30 function as a transparent film to suppress reflection interference color. Irregularity occurs. The presence of the silicon oxide layer 30 can further inhibit diffusion of alkali metal cations on the transparent substrate 10 to the fluorine-doped tin oxide layer 40. The silicon oxide layer 30 has a thickness of 10 nm to 50 nm, preferably 30 to 40 nm.
掺氟氧化锡层40中，掺杂氟的SnO2薄膜的导电机理是在SnO2中掺杂氟后，规则的SnO2晶格点阵中一部分的O2－被F－所替代，正Sn3＋就提供一种非共价运动的电子而成为电离中心，原来的能带结构发生改变，杂质能级处于原禁带中，但很靠近导带，因此导电性会大为改善。但SnO2中随着掺氟量的增加，SnO2薄膜的电阻会先减小后增加。这是由于掺杂量较低时，F－以替位原子的形式占据了O2－的位置，同时产生一个自由电子，随着掺杂量的增加，薄膜中的自由电子数目随之增加，从而薄膜的电阻就减小。但当替位形式存在的掺杂量达到饱和值后，如果继续增加的氟掺杂量，则过剩的F－就会进入晶格的间隙位和晶粒的晶界处，形成无效掺杂，这些过剩的掺杂不但不能产生更多的自由电子，而且会使薄膜中的自由电子散射中心增加，从而使自由电子的散射程度增强，导致了薄膜的电阻逐渐增加。并且在SnO2中随着掺氟量的增加，薄膜在300nm～1200nm的波长范围内平均透过率会随着氟的掺杂量增加而有所减小，这是由于薄膜内自由电子、杂质离子以及缺陷浓度的增加而使光的散射和吸收相应地增强。并且随着在SnO2中掺杂氟的量增加，薄膜在300nm～1200nm的波长范围内的光散射透过率会下降，从而表现出薄膜的雾度值降低。因此，为了使太阳能电池用透明导电基板具有良好的导电性能及增加到达光电转换层的光量，需要使掺氟氧化锡层40电阻低并且在300nm～1200nm的波长范围内对光的散射和吸收量较少。Fluorine-doped tin oxide layer 40, fluorine-doped SnO 2 conducting mechanism in the film is doped with fluorine SnO 2, SnO 2 O crystal lattice in the regular portion 2 is F - replaced, n Sn 3+ provides a non-covalently moving electron and becomes an ionization center. The original band structure changes, the impurity level is in the original forbidden band, but it is very close to the conduction band, so the conductivity is greatly improved. However, increasing the SnO 2 doped with fluorine increased amount of SnO 2 thin film resistance will first decrease. This is because when the doping amount is low, F - takes up the position of O 2- in the form of a substitution atom, and at the same time generates a free electron. As the amount of doping increases, the number of free electrons in the film increases. Thereby the electrical resistance of the film is reduced. However, when the doping amount of the substitution form reaches a saturation value, if the amount of fluorine doping continues to increase, the excess F − will enter the gap position of the crystal lattice and the grain boundary of the crystal grain to form an ineffective doping. These excess dopings not only fail to generate more free electrons, but also increase the free electron scattering center in the film, thereby increasing the degree of scattering of free electrons, resulting in a gradual increase in the resistance of the film. And in SnO 2 , as the amount of fluorine added increases, the average transmittance of the film in the wavelength range of 300 nm to 1200 nm decreases as the doping amount of fluorine increases, which is due to free electrons and impurities in the film. The increase in ions and the concentration of defects increases the scattering and absorption of light accordingly. Further, as the amount of fluorine doped in SnO 2 increases, the light-scattering transmittance of the film in the wavelength range of 300 nm to 1200 nm decreases, thereby exhibiting a decrease in the haze value of the film. Therefore, in order to make the transparent conductive substrate for a solar cell have good electrical conductivity and increase the amount of light reaching the photoelectric conversion layer, it is necessary to make the fluorine-doped tin oxide layer 40 have low electric resistance and to scatter and absorb light in a wavelength range of 300 nm to 1200 nm. less.
在掺氟氧化锡层40中，如果厚度较大，则掺氟氧化锡层40对近红外光的吸收会增大，显然这不适合作为太阳能电池用透明导电基板使用的透明导电性薄膜来使用。而将掺氟氧化锡层40通过改变掺杂氟的浓度来减少膜层对近红外光的吸收，则需要至少多出一个镀膜头装置，从而这个掺杂氟的浓度变化的氧化锡层厚度较大，原料的成本较高，控制过程复杂。为了可以简化镀膜程序，节约原料成本，同时尽量消除残留应力，增加附着力，掺氟氧化锡层40的厚度不能太大。另外，为了得到充分的光散射效果，使掺氟氧化锡层40表面具有优质的绒面结构，得到高的雾度值，掺氟氧化锡层40的厚度不能太小，所以掺氟氧化锡层40的厚度控制比较严格。经过理论分析及多次实验，掺氟氧化锡层40的厚度控制在400nm～599nm的范围较佳，厚度在500nm～599nm则更好。在该厚度内掺氟氧化锡层40中的氟可以均匀掺杂在氧化锡中，其中氟浓度相对氧化锡优选为1mol%～4mol%。在这个氟浓度内，掺氟氧化锡层面电阻较低，可达到7Ω/□～15Ω/□，更好能达到9Ω/□～11Ω/□。而且在这个氟浓度下掺氟氧化锡层40的微晶尺寸较大，薄膜的表面凹凸程度也较大，从而薄膜具有大的雾度，从值上表现雾度值大于10％，最好在10％～30％之间。掺氟氧化锡层40在300nm～1200nm的波长范围内的透光率＞81％，优选地，透光率＞85％。 In the fluorine-doped tin oxide layer 40, if the thickness is large, the absorption of the near-infrared light by the fluorine-doped tin oxide layer 40 is increased, which is obviously not suitable for use as a transparent conductive film for a transparent conductive substrate for a solar cell. . By changing the concentration of doped fluorine to reduce the absorption of near-infrared light by the fluorine-doped tin oxide layer 40, at least one more coating head device is required, so that the thickness of the tin oxide layer of the fluorine-doped concentration is changed. Large, the cost of raw materials is high, and the control process is complicated. In order to simplify the coating process, save raw material cost, and at the same time eliminate residual stress and increase adhesion, the thickness of the fluorine-doped tin oxide layer 40 should not be too large. In addition, in order to obtain a sufficient light scattering effect, the surface of the fluorine-doped tin oxide layer 40 has a high-quality suede structure, and a high haze value is obtained, and the thickness of the fluorine-doped tin oxide layer 40 cannot be too small, so the fluorine-doped tin oxide layer is formed. The thickness control of 40 is relatively strict. After theoretical analysis and multiple experiments, the thickness of the fluorine-doped tin oxide layer 40 is preferably controlled in the range of 400 nm to 599 nm, and the thickness is preferably in the range of 500 nm to 599 nm. The fluorine in the fluorine-doped tin oxide layer 40 may be uniformly doped in the tin oxide in the thickness, wherein the fluorine concentration is preferably from 1 mol% to 4 mol% with respect to the tin oxide. In this fluorine concentration, the fluorine-doped tin oxide layer has a low resistance, which can reach 7 Ω/□ to 15 Ω/□, and more preferably 9 Ω/□ to 11 Ω/□. Moreover, at this fluorine concentration, the crystallite size of the fluorine-doped tin oxide layer 40 is large, and the surface of the film has a large degree of unevenness, so that the film has a large haze, and the haze value is greater than 10% from the value, preferably in 10% to 30%. The fluorine-doped tin oxide layer 40 has a light transmittance of >81% in a wavelength range of 300 nm to 1200 nm, preferably a light transmittance of >85%.
利用原子力显微镜（AFM）和扫描电镜（SEM）对掺氟氧化锡层40的表面形貌进行测定，可以发现如图1所示在掺氟氧化锡层40与氧化硅层30相反的一侧的表面整个范围具有凹凸不平的绒面结构，原子力显微镜测试表面在单一方向的取样长度内最大轮廓峰高和最大轮廓谷深的和Rpv为100nm～500nm，更好为200nm～400nm。掺氟氧化锡层40表面的凹凸不平的绒面结构的存在，可以使太阳能电池用透明导电基板的雾度因光的散射而提高。而在掺氟氧化锡层40表面具有凹凸不平的绒面结构，可以使光在掺氟氧化锡层40和太阳能电池的光电转换层的界面发生折射后进入太阳能电池光电转换层。另外，掺氟氧化锡层40表面具有凹凸不平的绒面结构可以使在其上形成的太阳能电池光电转换层和半导体层上形成的背电极层界面也变得凹凸不平，则光在该界面容易发生散射，这可以增加光在太阳能电池功能层中的光程，增加光电转换效率。而均匀掺杂氟的掺氟氧化锡层40表面的凹凸结构可以使整个透明导电性基板的雾度值偏差较小，这可以减少光在掺氟氧化锡层40与太阳能电池光电转换层界面的散射。 The surface topography of the fluorine-doped tin oxide layer 40 was measured by atomic force microscopy (AFM) and scanning electron microscopy (SEM), and it was found that the fluorine-doped tin oxide layer 40 was on the opposite side to the silicon oxide layer 30 as shown in FIG. The entire surface has a rugged pile structure, and the sum of the maximum profile peak height and the maximum profile valley depth in the sampling length of the atomic force microscope test surface in a single direction is from 100 nm to 500 nm, more preferably from 200 nm to 400 nm. The presence of the uneven textured surface on the surface of the fluorine-doped tin oxide layer 40 can improve the haze of the transparent conductive substrate for a solar cell due to scattering of light. On the other hand, the surface of the fluorine-doped tin oxide layer 40 has a rugged suede structure, and the light can be refracted at the interface between the fluorine-doped tin oxide layer 40 and the photoelectric conversion layer of the solar cell to enter the solar cell photoelectric conversion layer. In addition, the surface of the fluorine-doped tin oxide layer 40 having a rugged pile structure can make the interface of the solar cell photoelectric conversion layer formed on the solar cell layer and the semiconductor layer formed on the semiconductor layer uneven, and the light is easily formed at the interface. Scattering occurs, which increases the optical path of light in the functional layer of the solar cell and increases the photoelectric conversion efficiency. The uneven structure on the surface of the fluorine-doped fluorine-doped tin oxide layer 40 can make the haze value deviation of the entire transparent conductive substrate small, which can reduce the interface between the fluorine-doped tin oxide layer 40 and the solar cell photoelectric conversion layer. scattering.
以上所述实施例仅表达了本发明的几种实施例，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。 The above-mentioned embodiments are merely illustrative of several embodiments of the present invention, and the description thereof is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.
本发明的实施方式Embodiments of the invention
工业实用性Industrial applicability
序列表自由内容Sequence table free content

Claims (1)

1、一种太阳能电池用透明导电基板，包括透明基底，其特征在于，所述太阳能电池用透明导电基板还包括依次叠加在所述透明基底上的金属氧化物层、氧化硅层及掺氟氧化锡层，所述金属氧化物层未掺杂氟，所述掺氟氧化锡层中均匀掺杂氟。 A transparent conductive substrate for a solar cell, comprising a transparent substrate, wherein the transparent conductive substrate for a solar cell further comprises a metal oxide layer, a silicon oxide layer and fluorine-doped oxide which are sequentially superposed on the transparent substrate. In the tin layer, the metal oxide layer is not doped with fluorine, and the fluorine-doped tin oxide layer is uniformly doped with fluorine.
2、根据权利要求1所述的太阳能电池用透明导电基板，其特征在于，所述金属氧化物层的折射率大于1.8。The transparent conductive substrate for a solar cell according to claim 1, wherein the metal oxide layer has a refractive index of more than 1.8.
3、根据权利要求1所述的太阳能电池用透明导电基板，其特征在于，所述金属氧化物层为氧化锡、氧化钛、氧化铟和氧化锌中的一种或两种以上。The transparent conductive substrate for a solar cell according to claim 1, wherein the metal oxide layer is one or more selected from the group consisting of tin oxide, titanium oxide, indium oxide, and zinc oxide.
4、根据权利要求1或2或3所述的太阳能电池用透明导电基板，其特征在于，所述金属氧化物层的厚度为21～30nm。The transparent conductive substrate for a solar cell according to claim 1 or 2 or 3, wherein the metal oxide layer has a thickness of 21 to 30 nm.
5、根据权利要求1所述的太阳能电池用透明导电基板，其特征在于，所述氧化硅层的厚度为30～40nm。The transparent conductive substrate for a solar cell according to claim 1, wherein the silicon oxide layer has a thickness of 30 to 40 nm.
6、根据权利要求1所述的太阳能电池用透明导电基板，其特征在于，所述掺氟氧化锡层中氟浓度相对氧化锡为1mol%～4mol%。 The transparent conductive substrate for a solar cell according to claim 1, wherein the fluorine-doped tin oxide layer has a fluorine concentration of from 1 mol% to 4 mol% based on the tin oxide.
7、根据权利要求1或6所述的太阳能电池用透明导电基板，其特征在于，所述掺氟氧化锡层的厚度为400nm～599nm。The transparent conductive substrate for a solar cell according to claim 1 or 6, wherein the fluorine-doped tin oxide layer has a thickness of 400 nm to 599 nm.
8、根据权利要求1或6所述的太阳能电池用透明导电基板，其特征在于，所述掺氟氧化锡层的厚度为500nm～599nm。The transparent conductive substrate for a solar cell according to claim 1 or 6, wherein the fluorine-doped tin oxide layer has a thickness of 500 nm to 599 nm.
9、根据权利要求1所述的太阳能电池用透明导电基板，其特征在于，所述掺氟氧化锡层与所述氧化硅层相反的一侧为 凹凸的绒面结构。The transparent conductive substrate for a solar cell according to claim 1, wherein the fluorine-doped tin oxide layer is opposite to the silicon oxide layer. Concave suede structure.
10、根据权利要求1所述的太阳能电池用透明导电基板，其特征在于，所述掺氟氧化锡层的面电阻为9Ω/□～11Ω/□、或在300nm～1200nm的波长范围内的透光率＞81％、或雾度为10％～30％、或最大轮廓峰高和最大轮廓谷深的和为100nm～500nm，更好为200nm～400nm。 The transparent conductive substrate for a solar cell according to claim 1, wherein the fluorine-doped tin oxide layer has a sheet resistance of 9 Ω/□ to 11 Ω/□ or a wavelength range of 300 nm to 1200 nm. The sum of the light rate > 81%, or the haze of 10% to 30%, or the maximum profile peak height and the maximum profile valley depth is 100 nm to 500 nm, more preferably 200 nm to 400 nm.
PCT/CN2010/071542 2009-04-03 2010-04-02 Transparent conductive substrate for solar cells WO2010111970A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200910106391A CN101527325A (en) 2009-04-03 2009-04-03 Transparent conductive substrate for solar cell
CN200910106391.4 2009-04-03

Publications (1)

Publication Number Publication Date
WO2010111970A1 true WO2010111970A1 (en) 2010-10-07

Family

ID=41095094

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2010/071542 WO2010111970A1 (en) 2009-04-03 2010-04-02 Transparent conductive substrate for solar cells

Country Status (2)

Country Link
CN (1) CN101527325A (en)
WO (1) WO2010111970A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101527325A (en) * 2009-04-03 2009-09-09 中国南玻集团股份有限公司 Transparent conductive substrate for solar cell
CN102867858A (en) * 2011-07-08 2013-01-09 亚树科技股份有限公司 Conductive substrate with good haze and electrical conductivity
CN102950829B (en) * 2011-08-30 2015-07-08 中国南玻集团股份有限公司 Conducting glass and preparation method thereof
CN103022231A (en) * 2011-09-22 2013-04-03 吉富新能源科技(上海)有限公司 Technology of high-transparency high-effect transparent conducting layer with buffer layer fuzzy structure
WO2019216219A1 (en) * 2018-05-07 2019-11-14 パナソニックＩｐマネジメント株式会社 Electrochemical device and method for manufacturing electrochemical device
CN112820791A (en) * 2021-02-04 2021-05-18 深圳市新旗滨科技有限公司 Component for resisting PID effect and preparation method and application thereof
JP7143919B1 (en) * 2021-05-07 2022-09-29 Ａｇｃ株式会社 Glass substrate with transparent conductive film and method for manufacturing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380480B1 (en) * 1999-05-18 2002-04-30 Nippon Sheet Glass Co., Ltd Photoelectric conversion device and substrate for photoelectric conversion device
US20040038051A1 (en) * 2000-11-21 2004-02-26 Akira Fujisawa Conductive film, production method therefor, substrate provided with it and photo-electric conversion device
US20060065299A1 (en) * 2003-05-13 2006-03-30 Asahi Glass Company, Limited Transparent conductive substrate for solar cells and method for producing the substrate
CN101310391A (en) * 2005-11-17 2008-11-19 旭硝子株式会社 Transparent conductive substrate for solar cell and process for producing the same
CN101527325A (en) * 2009-04-03 2009-09-09 中国南玻集团股份有限公司 Transparent conductive substrate for solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6380480B1 (en) * 1999-05-18 2002-04-30 Nippon Sheet Glass Co., Ltd Photoelectric conversion device and substrate for photoelectric conversion device
US20040038051A1 (en) * 2000-11-21 2004-02-26 Akira Fujisawa Conductive film, production method therefor, substrate provided with it and photo-electric conversion device
US20060065299A1 (en) * 2003-05-13 2006-03-30 Asahi Glass Company, Limited Transparent conductive substrate for solar cells and method for producing the substrate
CN101310391A (en) * 2005-11-17 2008-11-19 旭硝子株式会社 Transparent conductive substrate for solar cell and process for producing the same
CN101527325A (en) * 2009-04-03 2009-09-09 中国南玻集团股份有限公司 Transparent conductive substrate for solar cell

Also Published As

Publication number Publication date
CN101527325A (en) 2009-09-09

Similar Documents

Publication Publication Date Title
WO2010111970A1 (en) Transparent conductive substrate for solar cells
KR101618895B1 (en) Substrate for thin-film photoelectric conversion device, thin-film photoelectric conversion including the same, and method for producing substrate for thin-film photoelectric conversion device
WO2005011002A1 (en) Silicon based thin film solar cell
US20090165845A1 (en) Back contact module for solar cell
WO2006057160A1 (en) Thin film photoelectric converter
Shin et al. Semi-transparent photovoltaics using ultra-thin Cu (In, Ga) Se2 absorber layers prepared by single-stage co-evaporation
Ding et al. Wide gap microcrystalline silicon oxide emitter for a-SiOx: H/c-Si heterojunction solar cells
US20120060891A1 (en) Photovoltaic device
Han et al. High-mobility hydrogenated fluorine-doped indium oxide film for passivating contacts c-Si solar cells
CN101777598A (en) Transparent type solar cell module and manufacturing method thereof
CN102668126A (en) Solar cell and its production process
CN104733557A (en) HIT solar energy battery and method for improving short-circuit current density of HIT battery
Sai et al. Investigation of textured back reflectors with periodic honeycomb patterns in thin-film silicon solar cells for improved photovoltaic performance
CN106024937A (en) CIGS-based thin-film solar cell and preparation method thereof
AU2011219223B2 (en) Thin-film photoelectric conversion device and method for production thereof
JP4713819B2 (en) Substrate for thin film photoelectric conversion device and thin film photoelectric conversion device using the same
US20100154881A1 (en) Transparent solar cell module and method of fabricating the same
WO2010135973A1 (en) Transparent conductive substrate for solar battery
CN103367472B (en) A kind of T-shaped top electrode back reflection thin film solar cell
KR20120041942A (en) Solar cell
US20110180130A1 (en) Highly-conductive and textured front transparent electrode for a-si thin-film solar cells, and/or method of making the same
KR101833941B1 (en) Thin flim solar cell
Oyama et al. Requirements for TCO substrate in Si-based thin film solar cells-toward tandem
CN105355681A (en) Sputtering target material and CIGS-based thin film solar cell manufactured by sputtering target material
JP5469298B2 (en) Transparent conductive film for photoelectric conversion device and method for producing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10758072

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10758072

Country of ref document: EP

Kind code of ref document: A1