CN103367472B - A kind of T-shaped top electrode back reflection thin film solar cell - Google Patents
A kind of T-shaped top electrode back reflection thin film solar cell Download PDFInfo
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- CN103367472B CN103367472B CN201310332313.2A CN201310332313A CN103367472B CN 103367472 B CN103367472 B CN 103367472B CN 201310332313 A CN201310332313 A CN 201310332313A CN 103367472 B CN103367472 B CN 103367472B
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- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 239000010408 film Substances 0.000 claims abstract description 100
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 55
- 239000012528 membrane Substances 0.000 claims abstract description 28
- 230000007704 transition Effects 0.000 claims abstract description 28
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- XHUFZBUURXAQAS-UHFFFAOYSA-N [O-2].[SeH2].[In+3] Chemical compound [O-2].[SeH2].[In+3] XHUFZBUURXAQAS-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000004044 response Effects 0.000 description 11
- 230000003595 spectral effect Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- QVLNJJLJVMLHFO-UHFFFAOYSA-N [F].[O-2].[Zn+2] Chemical compound [F].[O-2].[Zn+2] QVLNJJLJVMLHFO-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
T-shaped top electrode back reflection thin film solar cell, the lower surface of transparent top electrode is formed with and some strip fins of its material identical, top electrode is set to be partially formed T-type structure, the downwardly convex formation strip bulge of P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane, electrically conducting transparent transition film lower surface below fin, the hearth electrode of correspondence position has and the one-to-one strip curved reflecting surface of fin with the contact surface of electrically conducting transparent transition film.Top electrode of the present invention gos deep into film, improves the capacity gauge of electrode pair electric current;The thin-film material formation arc bulge of subsequent deposition, adds the area of hull cell, adds the smooth surface of battery on electrode;Metallic bottom electrode has the back reflection face of concave mirror structure, adds utilization of the battery to reflected light, so as to improve absorption and utilization of the battery to light, further improves the conversion efficiency of battery.
Description
Technical field
The present invention relates to a kind of T-shaped top electrode back reflection thin film solar cell, belong to technical field of solar batteries.
Background technology
Photon, electronics and phonon are all the carriers of energy.Solar cell is used as photovoltaic energy conversion device, mainly light
Energy is exchanged with each other between son and electronics, while there is phonon to participate in this exchange process.The interaction of this energy is mainly sent out
It is raw in the range of a few micrometers of solar cell material surface, this provides physical basis to manufacture thin film solar cell.
Amorphous silicon film solar battery can significantly reduce the usage amount of silicon because of it, the low advantage of preparation technology temperature, into
In order to reduce one of most attractive silica-based solar cell of solar cell cost.But, compared with other silica-based solar cells,
The conversion efficiency of amorphous silicon film solar battery is relatively low.
In general, improving the method for battery performance mainly has:Using multijunction structure, battery is improved to different wavelengths of light
Absorb;Hetero-junction solar cell is constituted using different battery materials;Using special-shaped substrate, battery is improved to absorption of light etc..But this
A little methods are limited for the reduction of the preparation cost of battery and the raising of battery performance.Therefore, novel thin film solar cell is researched and developed
To reduction battery cost, improving battery performance has important meaning.
The electrode of usual thin film solar cell be all using with by the way of film parallel.Membrane electrode prepared by which,
Preparation method is simple, and performance is stable, and still, the raising of the electrode pair battery performance of which is limited.Therefore, novel thin film is studied
Solar cel electrode, improve battery has important meaning to the absorption of light and increase battery light-receiving area.
The structure for the main flow thin-film solar cells that people produce is respectively from top to down as shown in Fig. 1 now:Insulation
Substrate 5, transparent top electrode 1, P types amorphous silicon membrane 2, intrinsic amorphous silicon film 6, N types amorphous silicon membrane 3, hearth electrode 4.P
Type amorphous silicon membrane 2 and the overlapping connection of intrinsic amorphous silicon film 6, intrinsic amorphous silicon film 6 and N types amorphous silicon membrane 3 are folded again
Connection is closed, a P-i-N knot is constituted, top electrode 1 and hearth electrode 4 are respectively placed in the upper surface of P types amorphous silicon membrane 2 and N types
The lower surface of amorphous silicon membrane 3, ultimately forms single-node amorphous silicon thin-film solar cell.
The content of the invention
It is an object of the invention to:Overcome the defect of above-mentioned prior art, propose a kind of T-shaped top electrode back reflection film too
Positive electricity pond, battery has higher photoelectric transformation efficiency, and its simple production process is easy.
In order to achieve the above object, a kind of T-shaped top electrode back reflection thin film solar cell proposed by the present invention, from top to bottom
Including the transparent top electrode being sequentially connected, P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane, electrically conducting transparent
Transition film, hearth electrode, it is characterised in that:The lower surface of the transparent top electrode be formed with some striped transparent conductive fins,
Make P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type non-crystalline silicon that top electrode is partially formed below T-type structure, the fin
Film, electrically conducting transparent transition film lower surface are downwardly convex to form strip bulge, hearth electrode and the electrically conducting transparent mistake of correspondence position
Crossing the contact surface of film has and the one-to-one strip curved reflecting surface of fin.
The T-shaped top electrode back reflection thin film solar cell of the present invention, further improve is:
1st, the P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane, the thickness of electrically conducting transparent transition film
Degree is uniform.
2nd, the transparent top electrode is TCO glass, and the conductive film and electrically conducting transparent transition film of transparent top electrode are to mix
The film of fluorine zinc oxide or indium oxide selenium, the hearth electrode is the planar metal electrode that aluminium or ag material are made.
3rd, the depth-width ratio of the fin is 1:3~1:2, parallel to each other between fin, the spacing range of fin is:1-2um,
Altitude range is:100-300nm.
4th, the doping concentration of boron element is 10 in the P-type non-crystalline silicon film17~1019/cm3's;The intrinsic amorphous silicon
Free from admixture adulterates in film, and the doping concentration of P elements is 10 in the N-type amorphous silicon membrane17~1019/cm3, the p-type is non-
The deposit thickness scope of polycrystal silicon film is:180-220nm, the deposit thickness scope of intrinsic amorphous silicon film is:0.5-1um, N-type
The deposit thickness scope of amorphous silicon membrane is:180-220nm.
In addition, present invention also offers a kind of production technology of T-shaped top electrode back reflection thin film solar cell, its feature exists
In comprising the following steps:
1st step, prepare flat transparent top electrode;
2nd step, transparent top electrode surface prepare some striped transparent conductive fins, the fin and transparent top electrode formation T
Type structure;
3rd step, transparent top electrode surface gradually the uniform P-type non-crystalline silicon film of deposition thickness, intrinsic amorphous silicon film,
N-type amorphous silicon membrane, electrically conducting transparent transition film, make P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane,
Electrically conducting transparent transition film is in the formation strip bulge of fin corresponding region outwardly convex;
4th step, in electrically conducting transparent transition film surface hearth electrode is deposited, the hearth electrode and electrically conducting transparent transition film
Contact surface forms some and one-to-one curved reflecting surface of the fin.
The T-shaped top electrode back reflection thin film solar cell of the present invention manufacturing process further improvement is that:
1st, in the 2nd step, the mask for being provided with some strip windows is covered in flat transparent top electrode surface, and
The secondary deposit of transparent material of fluorine doped zinc oxide or indium oxide selenium is carried out to the window of mask, obtained and transparent top electrode material phase
Same fin, makes top electrode be partially formed T-type structure.
2nd, in the 1st step, fluorine doped zinc oxide or indium oxide selenium are prepared using magnetron sputtering method in surface of plate glass
Conductive film, forms transparent top electrode;2nd, in the 3rd step, magnetron sputtering method is respectively adopted and prepares fluorine doped zinc oxide or indium oxide
Fin, the electrically conducting transparent transition film of selenium.
3rd, in the 4th step, hearth electrode is the aluminium for forming conduction on electrically conducting transparent transition film by Magnetron Sputtered Al or silver
Film or Ag films.
4th, in the 3rd step, the P-type non-crystalline silicon film, intrinsic amorphous silicon film and N-type amorphous silicon membrane all use plasma
The deposit that Chemical enhancement vapour deposition instrument is carried out.
The thin-film solar cells of the present invention is compared with existing thin-film solar cells, and the top electrode of battery has T-shaped
Structure, its fin(It can be considered a part for top electrode)Go deep into film, improve the capacity gauge of electrode pair electric current;After on electrode
The arc bulge that the thin-film material of continuous deposit is formed in fin correspondence position, adds the area of hull cell, adds battery
Smooth surface;The metallic bottom electrode finally deposited is covered on arc film, forms the back reflection face with concave mirror structure, is increased
Add utilization of the battery to reflected light, so as to improve absorption and utilization of the battery to light, further improve the conversion effect of battery
Rate.
The preparation technology of thin-film solar cells of the present invention is compatible with existing hull cell production technology, is set using existing
It is standby to be produced, fin is only added in preparation process(It can be considered a part for top electrode)Secondary depositing step,
On the premise of hardly extra increase cost, battery performance is improved.
Brief description of the drawings
The present invention is further illustrated below in conjunction with the accompanying drawings.
Fig. 1 is existing thin-film solar cell structure schematic diagram.
Fig. 2 is T-shaped top electrode back reflection thin-film solar cell structure schematic diagram of the invention.
Fig. 3 is the spectral response curve comparison diagram of battery of the present invention and conventional films battery.
Embodiment
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings.
Product embodiments
T-shaped top electrode back reflection thin film solar cell of the invention is illustrated in figure 2, it is saturating including what is be sequentially connected from top to bottom
Bright top electrode 1, P-type non-crystalline silicon film 2, intrinsic amorphous silicon film 6, N-type amorphous silicon membrane 3, electrically conducting transparent transition film 8, bottom
Electrode 4, the lower surface for theing improvement is that transparent top electrode 1 of the invention be formed with electrically conducting transparent fin 7, make top electrode local
Form T-type structure, P-type non-crystalline silicon film 2, intrinsic amorphous silicon film 6, N-type amorphous silicon membrane 3, the electrically conducting transparent of the lower section of fin 7
The lower surface of transition film 8 is downwardly convex to form strip bulge, the contact with electrically conducting transparent transition film of hearth electrode 4 of correspondence position
Face has and the one-to-one strip curved reflecting surface of fin 7.Transparent top electrode selects TCO glass in this example(Electrically conducting transparent oxygen
Compound coated glass), mixed with fluorine zinc oxide in its conductive film and electrically conducting transparent transition film 8(Also it may be selected to mix indium oxide
Selenium).P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane, electrically conducting transparent transition film thickness it is uniform.Its
The doping concentration of boron element is 10 in middle P-type non-crystalline silicon film17~1019/cm3's;Free from admixture adulterates in intrinsic amorphous silicon film,
The doping concentration of P elements is 10 in N-type amorphous silicon membrane17~1019/cm3。
The deposit thickness of P-type non-crystalline silicon film is in the present embodiment:200nm, the deposit thickness of intrinsic amorphous silicon film is:
700um, the deposit thickness of N-type amorphous silicon membrane is:200nm, the deposit thickness of electrically conducting transparent transition film is 40-50nm, convex
The height of rib is 100nm, and width is 200nm, and spacing is 2 um.
The P-type non-crystalline silicon film 2 of battery, intrinsic amorphous silicon film 5, the triplicity of N-type amorphous silicon membrane 3, form P-i-N
Knot, light is irradiated to P-i-N knots surface and produces electron hole pair, and electronics is moved under electric field action to electrode, produces battery
Electric energy.
The top electrode of battery of the present invention to form T-type structure by depositing twice.Silicon thin film and bottom electricity are deposited on this electrode
After extremely, the bulge of an arc is formd, hearth electrode is formd the reflecting surface of concave mirror structure, is conducive to incident sunlight
Converged, improve the utilization to light.Because the area of the T-shaped electrode of formation is larger, so the battery formed on T-shaped electrode
Area it is larger, so the smooth surface of battery is bigger.Two above advantage, improves the photoelectric transformation efficiency of battery.
Spectral response l-G simulation test has been carried out to the present embodiment hull cell, and has been compared with conventional films battery, should
The result of experiment refers to that color in Fig. 3, figure is deeper for battery spectral response curve of the present invention, and color is shallower for conventional thin
The spectral response curve of film battery.
Test result indicates that, the spectral response variation tendency of two kinds of batteries is identical, be all 300~600nm wave bands with
The increase of wavelength and increase, to 600nm after spectral response intensity decline.And battery of the present invention is then in whole solar spectrum area
The more common amorphous silicon thin-film solar cell of response intensity has strengthened.
By the integration to whole spectral response as can be seen that the spectral response of battery of the present invention is than common amorphous silicon membrane
Solar cell enhancing about 6%.This T-shaped electrode shown in battery of the present invention can effectively improve amorphous silicon film battery
Spectral response.Because the T-shaped electrode in battery of the present invention increases battery light-receiving area, while the hearth electrode of concave surface mirror-type
The convergence to incident light can be realized, absorption of the battery to light is improved, therefore, the spectral response of all wave bands of emulation is all
Increase, and effect is more obvious.
Process example
The production technology of the T-shaped top electrode back reflection thin film solar cell of the present embodiment, using the production technology of " upside-down mounting ", bag
Include following steps:
1st step, prepare flat transparent top electrode:Fluorine doped zinc oxide conduction is prepared in glass surface using magnetron sputtering method
Film, obtains flat transparent top electrode(It is TCO glass in this example);
2nd step, transparent top electrode surface prepare some striped transparent conductive fins, the fin and transparent top electrode formation T
Type structure;In this step, the mask for being provided with some strip windows is covered in flat transparent top electrode surface, and to mask
Window carry out fluorine doped zinc oxide the secondary deposit of transparent material, acquisition it is identical with transparent top electrode conductive film material(It is conductive
Film material can be from transparent conductive materials such as TCO, ITO)Fin, top electrode is partially formed T-type structure;In this example,
The same fin that fluorine doped zinc oxide is prepared using magnetron sputtering method;
3rd step, transparent top electrode surface gradually the uniform P-type non-crystalline silicon film of deposition thickness, intrinsic amorphous silicon film,
N-type amorphous silicon membrane, electrically conducting transparent transition film, make P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane,
Electrically conducting transparent transition film is in the formation strip bulge of fin corresponding region outwardly convex;Wherein, P-type non-crystalline silicon film, intrinsic non-
Polycrystal silicon film and N-type amorphous silicon membrane, the deposit carried out using plasma chemical enhancing vapour deposition instrument, deposition thickness is successively
About 200nm, 0.7um, 200nm;The doping concentration of boron element is 10 in P-type non-crystalline silicon film17~1019/cm3;N-type amorphous
The doping concentration of P elements is 10 in silicon thin film17~1019/cm3;Electrically conducting transparent transition film then passes through magnetron sputtering method in this example
It is deposited, deposition thickness is about 40-50nm;
4th step, electrically conducting transparent transition film surface deposit hearth electrode, hearth electrode contact with electrically conducting transparent transition film
Face forms some and one-to-one curved reflecting surface of fin;Hearth electrode is in electrically conducting transparent mistake by Magnetron Sputtered Al in this example
Cross on film and form the aluminium film of conduction.
It can be seen that, preparation technology of the present invention is compatible with existing hull cell production technology, is produced using existing equipment,
The secondary depositing step of fin is only added in preparation process, on the premise of hardly extra increase cost, is improved
Battery performance.
In addition to the implementation, the present invention can also have other embodiment.All use equivalent substitution or equivalent transformation shape
Into technical scheme, all fall within the protection domain of application claims.
Claims (3)
1. a kind of T-shaped top electrode back reflection thin film solar cell, transparent top electrode, p-type including being sequentially connected are non-from top to bottom
Polycrystal silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane, electrically conducting transparent transition film, hearth electrode, it is characterised in that:It is described
The lower surface of transparent top electrode be formed with some strip fins of its material identical, top electrode is partially formed T-type structure, it is described
P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane, electrically conducting transparent transition film following table below fin towards
Lower convexity formation strip bulge, the hearth electrode of correspondence position and the contact surface of electrically conducting transparent transition film have and a pair of fin 1
The strip curved reflecting surface answered;The depth-width ratio of the fin is 1:3~1:2, parallel to each other, the spacing range of fin between fin
For:1-2um, altitude range is:100-300nm.
2. T-shaped top electrode back reflection thin film solar cell according to claim 1, it is characterised in that:The P-type non-crystalline silicon
Film, intrinsic amorphous silicon film, N-type amorphous silicon membrane, electrically conducting transparent transition film thickness it is uniform.
3. T-shaped top electrode back reflection thin film solar cell according to claim 2, it is characterised in that:The transparent top electricity
Extremely TCO glass, the conductive film and electrically conducting transparent transition film of transparent top electrode are thin for fluorine doped zinc oxide or indium oxide selenium
Film, the hearth electrode is the planar metal electrode that aluminium or ag material are made.
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JP6664065B2 (en) * | 2015-03-31 | 2020-03-13 | パナソニックIpマネジメント株式会社 | Solar cell element and solar cell module |
CN106229411A (en) * | 2016-08-02 | 2016-12-14 | 天津工业大学 | A kind of perovskite solar cell of backlight substrate and preparation method thereof |
CN106252513A (en) * | 2016-08-02 | 2016-12-21 | 天津工业大学 | Perovskite solar cell based on matte light regime structure and preparation method thereof |
US10418547B1 (en) | 2018-06-14 | 2019-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode |
CN109742163A (en) * | 2019-01-25 | 2019-05-10 | 武汉宇恩防伪技术有限公司 | A kind of solar battery thin film structure with anti-reflecting layer |
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US6140570A (en) * | 1997-10-29 | 2000-10-31 | Canon Kabushiki Kaisha | Photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovolatic element |
CN102064212A (en) * | 2009-11-12 | 2011-05-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Amorphous silicon film solar cell and preparation method thereof |
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JP2011258767A (en) * | 2010-06-09 | 2011-12-22 | Sharp Corp | Solar cell |
JP5381912B2 (en) * | 2010-06-28 | 2014-01-08 | 住友金属鉱山株式会社 | Transparent conductive substrate with surface electrode and method for producing the same, thin film solar cell and method for producing the same |
CN103367477A (en) * | 2012-03-30 | 2013-10-23 | 清华大学 | Solar cell |
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US6140570A (en) * | 1997-10-29 | 2000-10-31 | Canon Kabushiki Kaisha | Photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovolatic element |
CN102064212A (en) * | 2009-11-12 | 2011-05-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Amorphous silicon film solar cell and preparation method thereof |
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CN107342331B (en) | 2018-10-19 |
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