CN108649091A - A kind of solar cell photovoltaic component - Google Patents
A kind of solar cell photovoltaic component Download PDFInfo
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- CN108649091A CN108649091A CN201810380913.9A CN201810380913A CN108649091A CN 108649091 A CN108649091 A CN 108649091A CN 201810380913 A CN201810380913 A CN 201810380913A CN 108649091 A CN108649091 A CN 108649091A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The invention discloses a kind of solar cell photovoltaic components, including being opened in zigzag parabolic trough concentrator of the top layer for uniform condensing, back reflection layer is opened in the bottom of battery component, due to the effect of the GaAs rectangular light grid layer and rectangular raster absorbed layer of component internal, in component internal multiple reflections and diffraction can occur for sunlight, action time and distance of the light in absorbed layer are increased, absorptivity of the absorbed layer to light is enhanced.
Description
Technical field
The invention belongs to field of new energy technologies, and in particular to a kind of solar cell photovoltaic component.
Background technology
Fossil energy is greatly saved as a kind of important clean reproducible energy, its development and application in solar energy,
Solve the pollution and harm that traditional energy is brought.Traditional solar panels are when sunlight irradiates on it, light dispersion,
It not enough concentrates, so that focal spot energy is unevenly distributed on receiver surface, to keep it low to the utilization ratio of solar energy.It restricts
The biggest factor of solar cell development is the photoelectric conversion rate of solar cell, and solar cell photoelectric conversion ratio is not high at present
The main reason for be that photon is lost in, and one be the material of solar battery obsorbing layer to light the main reason for cause photon to be lost in
Absorptivity is smaller, second is that the structure of absorbed layer itself is unfavorable for the opto-electronic conversion of solar cell.General thin solar cell
The main reason for transfer efficiency is low is that it is smaller to the absorbability of long wavelength light, and the light of long wavelength is fully absorbed needs
The distance of transmission is much larger than the thickness of thin-film solar cells.The transfer efficiency of current solar cell is generally relatively low, Er Qiezhuan
The theoretical value for changing efficiency all obtains in an ideal case, and solar cell is in photoelectric conversion process, each due to existing
The additional energy loss of kind, actual efficiency are lower than theoretical limit efficiency.
Invention content
To solve the above-mentioned problems, the present invention provides a kind of solar cell photovoltaic components, to improve solar cell
Photoelectric conversion rate.
In order to achieve the above objectives, a kind of solar cell photovoltaic component of the present invention includes setting gradually from bottom to top
Back reflection layer, absorption in wire grid layer, grating layer, ITO layer, metal mesh and zigzag parabolic trough concentrator, back reflection layer and grating are inhaled
It receives side at layer to flush, grating layer is different with the fill factor of absorption in wire grid layer, and the cycle phase of grating layer and absorption in wire grid layer is same.
Further, back reflection layer includes horizontally spaced setting silicon dioxide layer, adjacent silicon dioxide layer it
Between be filled with silicon layer.
Further, it is covered with layer of transparent glass above back reflection layer.
Further, zigzag parabolic trough concentrator thickness is 0.2mm~0.55mm, and incident ray and folding face shape parabolic
The angle of column concentrator top surface normal is equal to the angle of emergent ray and zigzag parabolic trough concentrator bottom surface normal.
Further, the period of grating layer and absorption in wire grid layer is 400nm.
Further, grating layer and absorption in wire grid layer are rectangle, and grating layer is superimposed on the center line of absorption in wire grid layer.
Further, the fill factor f1 of grating layer by layer is 0.1, and the fill factor f2 of absorption in wire grid layer is 0.45.
Further, grating layer includes several horizontally disposed gratings, and spacing is 220nm between adjacent grating
~222nm.
Further, spacing is 221nm between the adjacent grating of grating layer.
Further, the grating groove depth of grating layer and absorption in wire grid layer is equal, is 320nm.
Compared with prior art, the present invention is provided with the zigzag parabolic trough concentrator of uniform condensing in top layer, improves
To the utilization ratio of luminous energy；Inside is provided with the double-deck rectangle and double fill factor optical grating constructions, due to grating layer and absorption in wire grid
The effect of layer, sunlight can occur multiple reflections and diffraction between the levels grating of component internal, increase light and absorbing
The action time of layer and distance, enhance absorptivity of the absorbed layer to light.
Further, further include the back reflection layer being arranged immediately below absorption in wire grid layer, back reflection layer includes along level side
Silicon dioxide layer is set to interval, is filled with silicon layer between adjacent silicon dioxide layer, photon can fully be reflected, substantially
Improve absorptivity of the absorbed layer to light.
Further, it is covered with layer of transparent glass above back reflection layer, transparent glass layer can reflect light into grating
Layer and absorption in wire grid layer are absorbed again, and the light for transmiting glassy layer can be absorbed by silicon dioxide layer and silicon layer,
Improve the optical energy utilization efficiency of photovoltaic module.
Further, zigzag parabolic trough concentrator thickness is 0.2mm~0.55mm, and incident ray and folding face shape parabolic
The angle of column concentrator top surface normal is equal to the angle of emergent ray and zigzag parabolic trough concentrator bottom surface normal, makes through poly-
The luminous flux loss reduction of light microscopic.
Further, the period of grating layer and absorption in wire grid layer is 400nm, by double-layer grating structure setting period thus
Photon can be made to carry out effective contact action in grating region and absorbing material, so that photon energy is fully absorbed, Jin Erzhuan
Turn to electronics.
Further, grating layer and absorption in wire grid layer are rectangle, and grating layer is superimposed on the center line of absorption in wire grid layer,
Rectangular raster second is that rectangular raster carries out stable overlapping convenient for upper layer and lower layer, and optical grating construction is arranged to convenient for making
Rectangle can more fully absorb luminous energy.
Further, gold nano grain or silver nano-grain, gold nano grain or silver nanoparticle are contained in rectangular light grid layer
Grain can make the contact surface of medium generate surface plasma bulk effect.By metal surface plasmon resonance effect to incident light
It is captured so that the Localized field enhancement of metal nanoparticle makes light assemble, and electron-hole is generated in vitalizing semiconductor medium
It is right, to improve absorption of the semi-conducting material in solar cell to incident light.
Further, spacing is 221nm between the adjacent grating of grating layer, and absorptivity is best at this time.
Further, the grating groove depth of grating layer and absorption in wire grid layer is equal, is 320nm, optical grating construction is to light
The absorptivity of energy reaches peak value, may be implemented to maximally utilize luminous energy.
Description of the drawings
Fig. 1 is the structural diagram of the present invention；
In attached drawing：1, zigzag parabolic trough concentrator；2, metal mesh；3, ITO layer；4, grating layer；5, absorption in wire grid layer；6、
Back reflection layer, 7, transparent glass.
Specific implementation mode
The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments.
The orientation or position of the instructions such as term "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outside"
It is to be based on the orientation or positional relationship shown in the drawings to set relationship, is merely for convenience of description of the present invention and simplification of the description, rather than
Indicate or imply that signified device or element must have a particular orientation, with specific azimuth configuration and operation, therefore cannot
It is interpreted as limitation of the present invention.
Referring to Fig.1, a kind of solar cell photovoltaic component includes the back reflection layer 6 set gradually from bottom to top, grating suction
Layer 5, GaAs rectangular light grid layer 4, ITO layer 3, metal mesh 2 and zigzag parabolic trough concentrator 1 are received, back reflection layer 6 and grating are inhaled
Side at layer 5 is received to flush.
Novel solar battery photovoltaic cells component length and width, whole height are all 2000nm~2020nm, and when use needs
Multiple-unit component is applied in combination.Grating layer 4 and absorption in wire grid layer 5 inside unit block are all made of gallium arsenide semiconductor material,
And grating layer 4 and absorption in wire grid layer 5 are rectangle, due to the effect of grating 4 and absorption in wire grid layer 5, sunlight is in 4 He of grating layer
Multiple reflections and diffraction can occur for absorption in wire grid layer 5, increase action time and distance of the light in absorbed layer, enhance absorption
Absorptivity of the layer to light.The cycle T of grating layer 4 is set as 400nm and the cycle phase of absorption in wire grid layer 5 is same.This is by continuous
Simulation and optimization obtain optimum structure parameter, by double-layer grating structure setting thus the period can make photon grating region with
Absorbing material carries out effective contact action, so that photon energy is fully absorbed, and then be converted into electronics.The filling of grating layer 4 because
Son (product and short circuit current and the open-circuit voltage for the electric current and voltage that fill factor is optical grating construction when having a peak power output
The ratio of product) f1 is 0.15, thickness f1*T=60nm, the fill factor f2 of absorption in wire grid layer 5 are 0.45, length f2*T
=180nm, the thickness and length of grating are calculated according to the empirical equation that fitting experimental data goes out.Grating layer 4 needs folded
It closes on 5 center line, so absorption in wire grid layer 5 needs and 4 period having the same of grating layer, is just convenient for being superimposed with each other, and
It is fixed with conductive metal chuck.Conductive metal chuck is one layer of very thin metal film, since conductive metal chuck is coated on
The outermost layer of entire unit block, so not embodying in Fig. 1.The height of grating layer 4 and absorption in wire grid layer 5, that is, grating cutting
Depth h1, h2 is equal, is 320nm.When groove depth is in 180nm~320nm, with the continuous intensification of cutting, grating knot
Structure constantly widens the absorption region of long wavelength's light, and whole absorptivity incrementally increases.And when groove depth 320nm~
When 460nm, with the increasing again of groove depth, optical grating construction starts to weaken again to the absorption of long wavelength, so when cutting is deep
When degree is 320nm, there are one peak values to the absorptivity of luminous energy for optical grating construction, have reached 90% or so, by grating groove depth h1,
H2 is both configured to 320nm, may be implemented to maximally utilize luminous energy.Grating layer 4 includes several horizontally disposed light
Grid, spacing is 220nm~222nm between adjacent grating.Grating space is excessive or the too small light that is all unfavorable for is in optical grating construction
Internal reflection, causes absorptivity not rise anti-drop, and experiment shows that grating spacings range is defined in 220nm~222nm closes the most
It is suitable, it takes intervening value 221nm best, is conducive to photon and transmits and absorb in optical grating construction.Grating layer 4 makes the contact surface of medium produce
Raw surface plasma bulk effect, enhancing solar cell is to the average absorption efficiency of visible light wave range, 5 special needle of absorption in wire grid layer
Longer wavelengths of infrared band is fully absorbed, grating layer 4 and absorption in wire grid layer 5 distinguish general after absorption luminous energy repeatedly
The photo-generated carrier of generation is transmitted to ITO layer 3 and is collected, and the electric current finally generated connects cladding grating layer by component both sides
4 and absorption in wire grid layer 5 metal chuck at left and right sides of two silver electrodes and ITO layer upper layer metal mesh 2 export.Metal chuck
Be with metallic film roll into it is closed unit block can be inserted in just and a tightly fixed structure, two electrodes point
It is not welded on two opposite faces of chuck.It can generate heat so as to cause generating efficiency since solar cell module works long hours
It decreases, it is therefore necessary to carry out whole cooling by the way of air-cooled or water cooling after multicompartment assembles.Each unit group
Part is whole after metal electrode can be used in series or in parallel with each other to be used.
Zigzag parabolic trough concentrator 1 be it is a kind of replacing " curved surface " with " more folding faces ", replaced with " double silver plated glass " " plating
The novel parabolic cylinder folding face shape silvered glass solar concentrator of silver-colored glass ", thickness are 0.2 to 0.55mm.More folding face angles
Setting to ensure that the angle of incident ray and zigzag parabolic trough concentrator top surface normal is equal to emergent ray and is thrown with folding face shape
The angle of object column concentrator bottom surface normal.The luminous flux loss reduction of zigzag parabolic trough concentrator is penetrated at this time.
Preferably, grating layer 4 and absorption in wire grid layer 5 are rectangle, first, because rectangular raster is convenient for making, second is that rectangle
Grating carries out stable overlapping convenient for upper layer and lower layer, and optical grating construction is arranged and rectangular more can fully be inhaled to luminous energy
It receives.
Preferably, back reflection layer 6 uses photon crystal material.It includes the silica of horizontally spaced setting
Layer, silicon layer is filled between adjacent silicon dioxide layer.Wherein, silicon layer is made of silicon, and silicon dioxide layer is made of silica.
Silicon layer width is 64.7nm, and the width of silicon dioxide layer is 153nm, the two values are all the refractive index according to silicon and silica
With the specific calculated definite value of light wave long value.Major part due to reaching back reflection layer 6 is the relatively long infrared light of wavelength
Line, such width setting substantially increase absorptivity of the back reflection layer to infrared light.6 number of plies of back reflection layer is set as 5 layers, always
Thickness is 1088.5nm.Layer of transparent glass 7 is covered on back reflection layer 6, transparent glass 7 can reflect light into grating layer 4
Absorbed again with absorption in wire grid layer 5, and transmit transparent glass 7 light can by back reflection layer 6 silicon dioxide layer and
Silicon layer is absorbed.
Preferably, add metal nanoparticle in the GaAs rectangular light grid layer 4 on upper layer, wherein it is preferable that plus
Enter gold nano or silver nano-grain.
Preferably, lower layer's rectangular raster absorbed layer 5 is to take etc. traditional semiconductor silicon material from primitive thermoelectron
The method of injection is handled.
The course of work of the present invention is as follows：
After incident light is by zigzag parabolic trough concentrator 1, uniform condensing is realized, to substantially increase solar energy
Radiosity and optical energy utilization efficiency.Component internal devises Dual-layer rectangular raster structure, and grating layer 4 and light
The fill factor of grid absorbed layer 5 is different, and levels grating is made targetedly to be inhaled to short-wavelength light and long wavelength light respectively
It receives.After absorption in wire grid layer 5 is etched into optical grating construction, converging light passes through metal mesh 2 and ITO layer 3 in absorption in wire grid layer
Random multiple reflections make the growth of its propagation time, propagation distance become larger, and increase the whole distribution of light intensity of absorbed layer grating region,
So that more photons is had an opportunity the material effects with absorbed layer, finally improves the efficiency of light absorption of absorbed layer.Exist simultaneously
Battery component bottom is provided with back reflection layer 6 made of photon crystal material so that sunlight can occur in component internal
Multiple reflections and diffraction increase action time and distance of the light in absorbed layer, enhance absorptivity of the absorbed layer to light, as long as
The wave-length coverage of forbidden photon band is controlled within solar spectrum wave-length coverage, bottom reflector can carry out intimate hundred to photon
/ hundred reflection.
Metal nanoparticle is added in the grating layer 4 on upper layer, the contact surface of medium is made to generate surface plasma bulk effect,
For enhancing average absorption efficiency of the solar cell to visible light wave range, at the same upper layer grating layer it is smaller fill factor it is advantageous
It penetrates in unabsorbed light wave, is absorbed again by absorption in wire grid layer 5.The rectangular raster absorbed layer 5 of lower layer is to tradition
Semiconductor silicon material the method injected from primitive thermoelectron such as take to be handled, it is using nano-noble metal etc. from swashing
Member generates thermoelectron injection mechanism and is persistently injected into the transmission main body of silicon-based photovoltaic device under light action so that silicon-based photovoltaic
The current density of device increases, light absorption range increases, hence it is evident that the photoelectric conversion efficiency for improving near infrared region, to realize the sun
The wide spectrum of spectrum responds, and absorption in wire grid layer 5 is specifically for the light wave that is not fully absorbed in upper layer and longer wavelengths of infrared
Optical band is absorbed again, the final overall absorption rate for improving visible light wave range.When incident light through convergence, into absorption in wire grid
After layer is absorbed repeatedly by semi-conducting material, the photo-generated carrier of generation collected by ITO layer 3 after by the electrode of metal chuck with
The metal mesh 2 on ITO layer upper layer is exported eventually as electric current.
Claims (10)
1. a kind of solar cell photovoltaic component, which is characterized in that including back reflection layer (6), the light set gradually from bottom to top
Grid absorbed layer (5), grating layer (4), ITO layer (3), metal mesh (2) and zigzag parabolic trough concentrator (1), back reflection layer (6) and
Side flushes at absorption in wire grid layer (5), and grating layer (4) is different with the fill factor of absorption in wire grid layer (5), grating layer (4) and light
The cycle phase of grid absorbed layer (5) is same.
2. a kind of solar cell photovoltaic component according to claim 1, which is characterized in that back reflection layer (6) includes edge
Silicon dioxide layer is arranged in horizontal direction interval, and silicon layer is filled between adjacent silicon dioxide layer.
3. a kind of solar cell photovoltaic component according to claim 1, which is characterized in that covered above back reflection layer (6)
It is stamped layer of transparent glass (7).
4. a kind of solar cell photovoltaic component according to claim 1, which is characterized in that zigzag parabolic trough concentrator
(1) thickness is 0.2mm~0.55mm, and the angle of incident ray and zigzag parabolic trough concentrator (1) top surface normal is equal to
Penetrate the angle of light and zigzag parabolic trough concentrator (1) bottom surface normal.
5. a kind of solar cell photovoltaic component according to claim 1, which is characterized in that grating layer (4) and grating are inhaled
The period for receiving layer (5) is 400nm.
6. a kind of solar cell photovoltaic component according to claim 1, which is characterized in that grating layer (4) and grating are inhaled
It is rectangle to receive layer (5), and grating layer (4) is superimposed on the center line of absorption in wire grid layer (5).
7. a kind of solar cell photovoltaic component according to claim 1, which is characterized in that the filling of grating layer (4) layer
Factor f1 is 0.1, and the fill factor f2 of absorption in wire grid layer (5) is 0.45.
8. a kind of solar cell photovoltaic component according to claim 1, which is characterized in that grating layer (4) includes several
Horizontally disposed grating, spacing is 220nm~222nm between adjacent grating.
9. a kind of solar cell photovoltaic component according to claim 8, which is characterized in that the adjacent light of grating layer (4)
Spacing is 221nm between grid.
10. a kind of solar cell photovoltaic component according to claim 1, which is characterized in that grating layer (4) and grating are inhaled
The grating groove depth for receiving layer (5) is equal, is 320nm.
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| CN201810380913.9A CN108649091A (en) | 2018-04-25 | 2018-04-25 | A kind of solar cell photovoltaic component |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110092578A (en) * | 2019-05-08 | 2019-08-06 | 山东光韵智能科技有限公司 | A kind of high efficiency high energy light line photoelectric conversion material and its manufacturing method |
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