CN209859962U - Selective reflector for photovoltaic module - Google Patents
Selective reflector for photovoltaic module Download PDFInfo
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- CN209859962U CN209859962U CN201920450338.5U CN201920450338U CN209859962U CN 209859962 U CN209859962 U CN 209859962U CN 201920450338 U CN201920450338 U CN 201920450338U CN 209859962 U CN209859962 U CN 209859962U
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- photovoltaic module
- layer
- reflector
- silver mirror
- selective reflector
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a selective reflector for photovoltaic module, the reflector adopts the silver mirror as the speculum for with the back of solar direct light reflection to photovoltaic module, the silver mirror includes the glass substrate surface has set gradually sensitization layer and activating layer be provided with the infrared band absorbed layer between the sensitization layer and the activating layer on glass substrate surface, the infrared band absorbed layer is used for absorbing or dredging the absorptive spectrum of the crystalline silicon solar cell of not by photovoltaic module, only makes and can be reflected to photovoltaic module by the absorptive wave band of solar cell. The utility model discloses an improvement to ordinary silver mirror, make the silver mirror can remove the unfavorable wave band of photovoltaic module efficiency to under the condition that keeps the two-sided subassembly advantage of two glasss, effectively reduce the surface temperature of subassembly, thereby improve entire system's efficiency greatly.
Description
Technical Field
The utility model belongs to the technical field of the photovoltaic, in particular to a selectivity reflector for photovoltaic module.
Background
With the arrival of the era of the flat price of photovoltaic power generation on the internet, how to reduce the power consumption cost becomes the most key factor occupying the market. Therefore, in the technical aspect, the solar cell efficiency and the module efficiency are continuously refreshed, and a plurality of new technologies and ideas emerge, and particularly, the double-glass double-sided module becomes the most dazzling star in the photovoltaic field due to the unique advantages of the double-glass double-sided module.
The double-glass double-sided assembly is a photovoltaic assembly with the front surface and the back surface capable of generating electricity, and the efficiency of the back surface can reach 90% of the front surface. However, due to the directionality of the sunlight, the back cell can only receive scattered light from the atmosphere, which greatly limits the output of the cell.
Related researches are carried out on the problems of improving the light receiving of a back battery, improving the generated energy of a component, reducing the photovoltaic power consumption cost and the like by existing enterprises in the industry at present. One typical method is to reflect a part of the direct solar light to the back of the module through a reflector, so that the price of one piece of the reflector can be used for replacing the price of one piece of the module, and the electricity consumption cost is greatly reduced.
The technical scheme reflects sunlight to the back surface of the module through the reflector, which is equivalent to increase the light receiving quantity of the single module, but brings a problem that the temperature of the photovoltaic module is increased. Experiments show that the temperature is averagely increased by 7 ℃ every time the luminous flux is increased by 0.5 times, while for a crystalline silicon component, the temperature is increased by 1 ℃, the efficiency is reduced by about 0.39%, and the influence is not only on the back side, but also on the front side, the front side is equally reduced. According to research, the main reason for causing the temperature rise is that the infrared band above 1100nm in the solar spectrum can hardly be absorbed by the cell to generate the photovoltaic effect, but is converted into heat energy, and the electric energy output is seriously influenced.
SUMMERY OF THE UTILITY MODEL
The invention of the utility model aims to: aiming at the problems, the selective reflector can effectively reduce the temperature of the photovoltaic module, so that the purpose of improving the output efficiency of the photovoltaic module is achieved.
The technical scheme of the utility model is realized like this: a selective reflector for a photovoltaic module, the reflector adopts a silver mirror as a reflector for reflecting direct solar light to the back of the photovoltaic module, the silver mirror comprises a glass substrate, and a sensitizing layer and an activating layer are sequentially arranged on the surface of the glass substrate, and the selective reflector is characterized in that: an infrared band absorption layer is arranged between the sensitizing layer and the activating layer on the surface of the glass substrate and is used for absorbing or dredging the spectrum which is not absorbed by the crystalline silicon solar cell of the photovoltaic module, and only the band which can be absorbed by the solar cell is reflected to the photovoltaic module.
A selective reflector for photovoltaic module, its infrared band absorbed layer is arranged in absorbing or dredging the spectrum of 1100nm ~ 1300nm and 1400nm ~ 1800nm wave band among the solar spectrum.
A selective reflector for photovoltaic module, it is in the reflector surface is provided with the photonic crystal layer, the photonic crystal layer is used for not being guided to invalid region by the absorptive light of photovoltaic module's crystal silicon solar cell.
A selective reflector for photovoltaic module, it is in set up the photonic crystal layer on photovoltaic module's the glass.
A selective reflector for photovoltaic module, its forbidden band setting on photonic crystal layer is at 1100nm ~ 1300nm and two wave bands of 1400nm ~ 1800nm, the photonic crystal of two wave bands piles up from top to bottom and forms.
The utility model discloses an improvement to ordinary silver mirror, make the silver mirror can remove the unfavorable wave band of photovoltaic module efficiency to under the condition that keeps the two-sided subassembly advantage of two glasss, effectively reduce the surface temperature of subassembly, thereby improve entire system's efficiency greatly.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a reflection spectrum of a conventional silver mirror.
Fig. 3 is a silver mirror reflection spectrogram of the present invention.
Fig. 4 is a schematic structural diagram of the photonic crystal layer according to the present invention.
The labels in the figure are: 1 is a glass substrate, 2 is a sensitizing layer, 3 is an activating layer, 4 is an infrared band absorbing layer, and 5 is.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, a selective reflector for a photovoltaic module, the reflector adopts a silver mirror as a reflector for reflecting direct solar light to the back of the photovoltaic module, the silver mirror includes a glass substrate 1, a sensitizing layer 2 and an activating layer 3 are sequentially disposed on the surface of the glass substrate 1, an infrared band absorbing layer 4 is disposed between the sensitizing layer 2 and the activating layer 3 on the surface of the glass substrate 1, the infrared band absorbing layer 4 is used for absorbing or guiding a spectrum which is not absorbed by a crystalline silicon solar cell of the photovoltaic module, and only a band which can be absorbed by the solar cell is reflected to the photovoltaic module.
In this embodiment, the infrared band absorption layer 4 is used for absorbing or guiding a spectrum which has higher energy at two bands of 1100nm to 1300nm and 1400nm to 1800nm in the solar spectrum and is not absorbed by the crystalline silicon solar cell.
As shown in fig. 2, when the existing ordinary silver mirror is used as a reflector, the ordinary silver mirror has good reflection performance in the whole solar spectrum; as shown in fig. 3, in order to remove the wavelength band that is unfavorable to the system efficiency, the silver mirror in the present application is used as a reflector, an infrared dye coating process is added in the silver mirror manufacturing process, and an infrared wavelength band absorption layer is formed in the common silver mirror, so that the spectrum that is unfavorable to the wavelength band can be absorbed in the solar ray reflection process, only the wavelength band that can be absorbed by the solar cell is reflected to the photovoltaic module, the processed reflection spectrum is as shown in fig. 3, and the reflector manufactured by the method can effectively reduce the surface temperature of the module, and experiments show that the temperature rise caused by reflection can be reduced by 80% by the method.
As shown in fig. 4, in order to further reduce the operating temperature of the photovoltaic module, a photonic crystal layer 5 is disposed on the surface of the reflector, and meanwhile, the photonic crystal layer 5 may also be disposed on the glass of the photovoltaic module, the forbidden band of the photonic crystal layer 5 is set at two bands of 1100nm to 1300nm and 1400nm to 1800nm, and the photonic crystals of the two bands are stacked up and down, so that the two lights which are not absorbed by the crystalline silicon solar cell of the photovoltaic module can be guided to the ineffective area through the photonic crystals, thereby achieving the purpose of reducing the temperature.
The manufacturing method of the utility model is as follows: an infrared dye coating process is added in the manufacturing process of the silver mirror, and the spectrum of the unfavorable wave band which is not absorbed by the solar cell in the solar spectrum is absorbed by the coated infrared dye, and the specific manufacturing method comprises the following steps: firstly, preparing an infrared dye solution, then spraying the prepared infrared dye solution after a silver mirror sensitization process, drying, and finally, carrying out the subsequent steps of the silver mirror process. In addition, in order to further reduce the working temperature of the photovoltaic module, a photonic crystal layer is manufactured on the surface of the reflector, and light with corresponding wave bands is guided to an invalid region through the photonic crystal so as to achieve the purpose of reducing the temperature.
In this example, infrared dyes of 1, 3-bis (4-N, N-dimethylaminophenyl) squaraine and diimine were used, and the infrared dyes were respectively dissolved in a mixed solution of N-propanol and water to obtain a desired infrared dye solution. However, it should be noted that the types of infrared dyes described in the present embodiment are many, and the specific materials used in this embodiment are only for illustration and do not represent that only such materials can be used.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (5)
1. A selective reflector for a photovoltaic module, the reflector adopts a silver mirror as a reflector for reflecting direct solar light to the back of the photovoltaic module, the silver mirror comprises a glass substrate (1), and a sensitizing layer (2) and an activating layer (3) are sequentially arranged on the surface of the glass substrate (1), and the selective reflector is characterized in that: an infrared band absorption layer (4) is arranged between the sensitizing layer (2) and the activating layer (3) on the surface of the glass substrate (1), and the infrared band absorption layer (4) is used for absorbing or guiding the spectrum which is not absorbed by the crystalline silicon solar cell of the photovoltaic module, so that only the band which can be absorbed by the solar cell is reflected to the photovoltaic module.
2. The selective reflector for a photovoltaic module of claim 1, wherein: the infrared band absorption layer (4) is used for absorbing or guiding the spectrum of the 1100 nm-1300 nm and 1400 nm-1800 nm bands in the solar spectrum.
3. The selective reflector for photovoltaic modules according to claim 1 or 2, characterized in that: and a photonic crystal layer (5) is arranged on the surface of the reflector, and the photonic crystal layer (5) is used for guiding light which is not absorbed by the crystalline silicon solar cell of the photovoltaic module to an invalid region.
4. The selective reflector for a photovoltaic module of claim 3, wherein: a photonic crystal layer (5) is arranged on the glass of the photovoltaic module.
5. The selective reflector for a photovoltaic module of claim 4, wherein: the forbidden bands of the photonic crystal layer (5) are arranged at two wave bands of 1100 nm-1300 nm and 1400 nm-1800 nm, and the photonic crystals of the two wave bands are stacked up and down.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920450338.5U CN209859962U (en) | 2019-04-04 | 2019-04-04 | Selective reflector for photovoltaic module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920450338.5U CN209859962U (en) | 2019-04-04 | 2019-04-04 | Selective reflector for photovoltaic module |
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| CN209859962U true CN209859962U (en) | 2019-12-27 |
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| CN201920450338.5U Active CN209859962U (en) | 2019-04-04 | 2019-04-04 | Selective reflector for photovoltaic module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034204A (en) * | 2019-04-04 | 2019-07-19 | 四川钟顺太阳能开发有限公司 | A kind of selective reflector and preparation method thereof for photovoltaic module |
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2019
- 2019-04-04 CN CN201920450338.5U patent/CN209859962U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034204A (en) * | 2019-04-04 | 2019-07-19 | 四川钟顺太阳能开发有限公司 | A kind of selective reflector and preparation method thereof for photovoltaic module |
| WO2020199631A1 (en) * | 2019-04-04 | 2020-10-08 | 四川钟顺太阳能开发有限公司 | Selective reflector for photovoltaic module and manufacturing method therefor |
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| TR01 | Transfer of patent right |
Effective date of registration: 20230526 Address after: No. 1913, 19th Floor, Unit 1, Building 9, No. 1700, North Section of Tianfu Avenue, High tech Zone, Chengdu, Sichuan, 610000 Patentee after: CHENG DU ZHONG SHUN SCIENCE AND TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: No. 1455, Section 4, Xihanggang Avenue, Shuangliu County, Chengdu City, Sichuan Province, 610207 Patentee before: SI CHUAN ZHONG SHUN SOLAR ENERGY DEVELOPMENT Co.,Ltd. |
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| TR01 | Transfer of patent right |