CN105870220A - Photonic crystal light trapping structure for thin film solar cell - Google Patents
Photonic crystal light trapping structure for thin film solar cell Download PDFInfo
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- CN105870220A CN105870220A CN201610320350.5A CN201610320350A CN105870220A CN 105870220 A CN105870220 A CN 105870220A CN 201610320350 A CN201610320350 A CN 201610320350A CN 105870220 A CN105870220 A CN 105870220A
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- 239000010409 thin film Substances 0.000 title claims abstract description 48
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 38
- 230000003287 optical effect Effects 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 72
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000011358 absorbing material Substances 0.000 claims description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000005286 illumination Methods 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Life Sciences & Earth Sciences (AREA)
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Abstract
The invention discloses a photonic crystal light trapping structure for a thin film solar cell. The photonic crystal light trapping structure is characterized by being mainly composed of a two-dimensional photonic crystal light trapping layer and a one-dimensional photonic crystal reflecting structure; the two-dimensional photonic crystal light trapping layer is composed of two-dimensional photonic crystals arranged above and below an absorbing layer of the thin film solar cell respectively, and the structure parameters of the two layers of two-dimensional photonic crystals are the same. According to the double-layer two-dimensional photonic crystal light trapping structure, the optical property of scattering incident light at a large dip angle of the two-dimensional photonic crystals is fully utilized, and the upper and lower layers of two-dimensional photonic crystals reflect incident light into the absorbing layer of the cell at a large dip angle, so that the transmission path of photons is greatly prolonged; meanwhile, large-dip-angle reflected light can be totally reflected on an interface of the absorbing layer of the cell and reflected into the absorbing layer again, so that the light capturing effect is achieved, the absorbing efficiency of the thin film solar cell to incident light is improved, and the performance of the thin film solar cell is improved.
Description
Technical field
The invention belongs to technical field of solar batteries, particularly the design of thin-film solar cells light arresting structure, this
Invention proposes a kind of double-deck 2 D photon crystal light trapping structure, improves the light capture rate of thin-film solar cells, and then improves
The photoelectric transformation efficiency of battery.
Background technology
Solar energy as a kind of important channel of energy crisis and environmental problem that solves by various countries' extensive concern.Solar energy
The problem that cell photoelectric transformation efficiency is the lowest and production cost is too high governs the development of solar cell always.For above-mentioned two
Individual problem, solaode is generations of to be developed rapidly, and cell conversion efficiency improves constantly, and production cost constantly reduces.Thin
The appearance of film solar cell greatly reduces the manufacturing cost of solaode, but its transformation efficiency is but less than the tradition sun
Can battery.This is owing to thin-film solar cells is while significantly reducing cell thickness, and the thinnest absorbed layer seriously limits
The battery absorption to long wavelength's sunlight.
The main method improving thin-film solar cell photoelectric conversion efficiency at present is to increase at thin-film solar cells back
Add catoptric arrangement, will transmit through the incident illumination reflected back into absorbing layer again of battery obsorbing layer, increase the incident illumination biography at battery obsorbing layer
Defeated path.Thin-film solar cells generally increases anti-as battery of Ag/ZnO reflecting layer and Al/ZnO reflecting layer at battery back
Penetrating structure, both metallic solar energy cell reflective structures can have higher reflectance in wider frequency territory to incident illumination, with
Time metallic reflection structure also there is superior electrology characteristic.But light is had bigger absorption to damage by the surface of metallic reflection structure
Consumption, incident sunlight the most often occurs primary event will lose the energy of 3%～8% in metal surface, and meanwhile, metal has
Skin effect and metallic element are prone to the specific performance having a strong impact on battery and the stability of diffusion.Present on, problem is unfavorable
In the conversion efficiency of battery and the raising of stability and the reduction of battery production cost.
Metallic reflection structure cannot overcome problem above, and photonic crystal catoptric arrangement based on wave optics is superior with it
Reflection and sunken light characteristic be more and more applied to improve in solar cell photoelectric conversion efficiency.Photonic crystal is
Become the microstructure of cycle arrangement by the dielectric material of two or more differing dielectric constant in space, be situated between by difference
The space periodicity arrangement mode difference of permittivity material can be divided into 1-D photon crystal, 2 D photon crystal and three-dimensional photon
Crystal.1-D photon crystal can obtain the reflectance close to 100% in particular range of wavelengths, by 1-D photon crystal catoptric arrangement
It is applied in thin-film solar cells, can effectively avoid metallic reflector to solar energy while obtaining high reflectance
All negative effects that battery brings.But owing to the absorption spectrum ranges of solaode is wider, generally 300 ~ 1100nm, electricity
Pond is relatively big, as the absorption length that wavelength is 1100nm incident illumination is by non-crystalline silicon absorbed layer to the absorption length of long wavelength's incident illumination
3mm, it is clear that if only incident to long wavelength by increasing the reflection of finite number of time at the catoptric arrangement at solaode back
The raising of the absorption efficiency of light is not clearly.In order to solve problem above, the present invention proposes a kind of double-deck 2 D photon crystal
Thin-film solar cells light trapping structure, has been combined bilayer 2 D photon crystal light trapping structure with 1-D photon crystal catoptric arrangement
Come, form a kind of multilamellar mixing light trapping structure, while increasing battery back reflection efficiency, reduce bottom by multiple structure
Reflection light, in the transmission of top layer top layer, is really achieved sunken light.This theory is for improving thin-film solar cells light capture rate
Have great importance.
Summary of the invention
It is an object of the invention to the problem for above-mentioned existence, it is provided that a kind of double-deck 2 D photon crystal composition the most too
Sun energy battery light trapping structure, this light trapping structure makes full use of the feature of 2 D photon crystal high inclination-angle reflection incident illumination and combines one-dimensional
Photonic crystal high-performance catoptric arrangement constitutes a kind of multi-layer efficient photonic crystal light arresting structure.The present invention compensate for thin film too
The deficiency of sun energy cell reflective structure, fully extends the incident illumination propagation path at battery obsorbing layer, also reduces electricity simultaneously
The transmission to reflection light of the upper strata, pond, adds the light capture rate of battery.
Realizing the object of the invention technical scheme is:
A kind of photonic crystal light trapping structure for thin-film solar cells, it is mainly fallen into photosphere and one by 2 D photon crystal
Dimensional photonic crystal catoptric arrangement forms；Wherein:
It is brilliant by the two-dimensional photon being separately positioned on absorbing layer of thin film solar cell upper and lower that described 2 D photon crystal falls into photosphere
Body forms, and the structural parameters of two-layer 2 D photon crystal are identical；
Described 2 D photon crystal is arranged in different from its refractive index etc. by cylinder medium according to tetragonal arrangement mode
Thick transparent conductive medium forms；
The cylinder medium of described composition 2 D photon crystal is identical with absorbing layer of thin film solar cell medium, and electrically conducting transparent is situated between
Matter is tin indium oxide (ITO)；
The structural parameters of described 2 D photon crystal are relevant with the kind of thin-film solar cells absorbing material, can be by changing two
The sunken optical property of the parameter adjustment bilayer 2 D photon crystals such as dimensional photonic crystal thickness, fill factor, curve factor and lattice paprmeter；
Described 2 D photon crystal light trapping structure may apply to monocrystal silicon, polysilicon and amorphous silicon thin-film solar cell
In.Wherein: as a example by amorphous silicon thin-film solar cell, the thickness of 2 D photon crystal is 110nm, and fill factor, curve factor is 0.45,
Lattice paprmeter is 500nm, and the upper and lower 2 D photon crystal cylinder material is respectively N-shaped and p-type amorphous silicon material；
Described 1-D photon crystal catoptric arrangement is the cycle to replace heap by the dielectric material that two kinds of refractive indexs are different and ratio is bigger
Amassing and form, the periodic thickness of two media is determined by photonic crystal centre wavelength, can by changing centre wavelength and periodicity
To regulate forbidden photon band scope, it is possible to obtain wider forbidden photon band；
The periodical media of described composition 1-D photon crystal is respectively refraction and differs bigger silicon dioxide and amorphous silicon hydride；
Described 1-D photon crystal periodic thickness is relevant with Refractive Index of Material, wherein: the thickness of silicon dioxide is 130nm, hydrogenation
The thickness of non-crystalline silicon is 50nm, and periodicity is 5.
Can be changed by the parameter changing double-deck 2 D photon crystal light trapping structure and 1-D photon crystal catoptric arrangement
Overall sunken light characteristic, may apply in the thin-film solar cells of different absorbing material.
Effective benefit of the present invention is:
1 makes two-dimensional photonic crystal layer obtain by adjusting the fill factor, curve factor of two-dimensional photonic crystal layer, lattice paprmeter and thickness
High diffraction efficiency, so that double-deck 2 D photon crystal light trapping structure obtains optimal light capture effect.This light trapping structure
Sunken light characteristic, compared with the reflection of the limited number of time that catoptric arrangement increases, is greatly improved the incident illumination propagation at battery obsorbing layer
Path, decreases the transmission of upper strata reflection light simultaneously, improves the light capture rate of entirety.
2 make one-dimensional light by adjusting 1-D photon crystal centre wavelength, medium refraction index ratio, periodicity and periodic thickness
The reflectance of sub-crystal particular range of wavelengths is close to 100%, and wave-length coverage can be come according to the needs of different thin-film solar cells
Adjusting, reflecting effect is better than the 95% of reflecting layer.
3 present invention take full advantage of the feature of 2 D photon crystal high inclination-angle reflection incident illumination, use upper and lower two-layer two dimension
Photonic crystal defines efficient light trapping structure.Efficient to this light trapping structure and 1-D photon crystal reflection characteristic is combined,
Will have the different multilamellar photon crystal structure falling into light feature and combine formation a kind of multilamellar mixing light trapping structure, by double
Layer two-dimensional photon crystal structure minimizing bottom reflection light while increase battery falls into light efficiency, in the transmission of top layer, is really achieved
Fall into light.This theory has great importance for improving thin-film solar cells light capture rate.
Accompanying drawing explanation
In order to make present disclosure and becoming apparent from that advantage is stated, below accompanying drawing is described in detail.
Fig. 1 is the structural representation of the embodiment of the present invention；
Fig. 2 is two-dimensional photonic crystal layer structural representation；
Fig. 3 is 1-D photon crystal catoptric arrangement and Ag reflecting layer aerial reflectance comparison diagram.
Fig. 4 is to have double-deck 2 D photon crystal and 1-D photon crystal light trapping structure and the non-crystalline silicon with Ag reflecting layer
The thin-film solar cells absorption efficiency comparison diagram to vertical incidence light.
Fig. 5 is to have double-deck 2 D photon crystal and 1-D photon crystal light trapping structure and the non-crystalline silicon with Ag reflecting layer
The thin-film solar cells density of photocurrent comparison diagram when AM1.5 earth surface sunlight spectrum vertical incidence.
In figure: 1. 1-D photon crystal 2. lower floor 2 D photon crystal 3. amorphous silicon thin-film solar cell absorbed layer
4. electrode or anti-reflection film 6. bottom electrode 7. low refractive index dielectric layer 8. high refractive index medium on upper strata 2 D photon crystal 5.
Layer 9. transparency conducting layer 10. 2 D photon crystal cylinder.
Detailed description of the invention
Below in conjunction with the accompanying drawings with embodiment, the present invention is expanded on further.It should be understood that following embodiment is merely to illustrate this
Invention rather than limit the scope of the present invention, all from the present invention is to devise, without the knot done by creative work
Structure conversion all falls within protection scope of the present invention.
Embodiment:
A kind of photonic crystal light trapping structure being applicable to amorphous silicon thin-film solar cell, as it is shown in figure 1, this amorphous silicon membrane is too
Sun can battery be by 1-D photon crystal 1, lower floor's 2 D photon crystal 2, amorphous silicon hydride absorbed layer 3, upper strata two-dimensional photon crystalline substance
Body 4, anti-reflection film and upper electrode 5 and bottom electrode 6 form.Lower floor's 2 D photon crystal 2 and upper strata 2 D photon crystal 4 are located respectively
Above and below absorbing layer of thin film solar cell.Wherein:
2 D photon crystal light trapping structure is as in figure 2 it is shown, transparency conducting layer 9 and two-dimensional photon by two kinds of different mediums are brilliant respectively
Body cylinder 10 forms, and 2 D photon crystal cylinder 10 is arranged in the transparency conducting layer 9 of uniform thickness with tetragonal.One-dimensional light
Sub-crystal 1, lower floor's 2 D photon crystal 2 and upper strata 2 D photon crystal 4 constitute the photonic crystal light trapping structure of battery.On
Electrode 5 and the nesa coating that bottom electrode 6 is high printing opacity, low absorption.
1-D photon crystal 1 is to be become the cycle alternately arranged to constitute with high reflectance dielectric layer 8 by antiradar reflectivity dielectric layer 7,
Periodicity is 5.
In this embodiment, the material of 1-D photon crystal catoptric arrangement low refractive index dielectric layer 7 is silicon dioxide, refractive index
Being 1.46, thickness is 130nm, and the material of high refractive index medium layer 8 is amorphous silicon hydride, and refractive index is 4, and thickness is 50nm, week
Issue is 5.The material of 2 D photon crystal cylinder 10 is amorphous silicon hydride, and the material of transparency conducting layer 9 is tin indium oxide
(ITO), thickness is 110nm, and fill factor, curve factor is 0.45, and lattice paprmeter is 500nm.The material of upper electrode 5 and bottom electrode 8 is oxidation
Indium stannum (ITO), upper electrode 5 thickness is 100nm, and bottom electrode 8 thickness is 50nm.The thickness of described amorphous silicon hydride absorbed layer is
500nm, effectively can absorb the wavelength incident illumination less than 600nm, the therefore photon of 1-D photon crystal catoptric arrangement
Forbidden band should fall in 600 ~ 1100nm scope.
As it is shown on figure 3, the aerial reflectance of 1-D photon crystal catoptric arrangement is in 600 ~ 1100nm wave-length coverage, one
The average reflectance of the dimensional photonic crystal catoptric arrangement average reflectance slightly larger than Ag.
Described double-deck 2 D photon crystal and 1-D photon crystal light trapping structure amorphous silicon thin-film solar cell are to entering
Penetrate the absorbance of light as shown in Figure 4.The amorphous silicon thin-film solar cell with this light trapping structure relatively has Ag catoptric arrangement
The absorbance of amorphous silicon thin-film solar cell almost has whole battery absorption spectrum ranges (300 ~ 1100nm) and necessarily carries
Height, wherein the raising to the absorbance of the long wavelength that wave-length coverage is 700 ~ 1100nm is the most obvious.Total absorption efficiency from
54.67% brings up to 76.00%, improves nearly 22%.
Described double-deck 2 D photon crystal and 1-D photon crystal light trapping structure amorphous silicon thin-film solar cell exist
Density of photocurrent under AM1.5 earth surface solar spectrum is as shown in Figure 5.There is the amorphous silicon thin-film solar of this light trapping structure
Battery relatively has the density of photocurrent of the amorphous silicon thin-film solar cell of Ag catoptric arrangement almost at whole battery absorption spectrum
Scope (300 ~ 1100nm) all improves, wherein to the density of photocurrent of the long wavelength that wave-length coverage is 700 ~ 1100nm
Improve the most obvious.Short-circuit current density is from 21.14mA/cm2Bring up to 30.94mA/cm2。
Claims (7)
1., for a photonic crystal light trapping structure for thin-film solar cells, it is characterized in that: mainly fallen into by 2 D photon crystal
Photosphere and 1-D photon crystal catoptric arrangement composition；Wherein:
It is brilliant by the two-dimensional photon being separately positioned on absorbing layer of thin film solar cell upper and lower that described 2 D photon crystal falls into photosphere
Body forms, and the structural parameters of two-layer 2 D photon crystal are identical；
Described 2 D photon crystal is arranged in different from its refractive index etc. by cylinder medium according to tetragonal arrangement mode
Thick transparent conductive medium forms；
Described 1-D photon crystal catoptric arrangement is the cycle to replace heap by the dielectric material that two kinds of refractive indexs are different and ratio is bigger
Amassing and form, the periodic thickness of two media is determined by photonic crystal centre wavelength, can by changing centre wavelength and periodicity
To regulate forbidden photon band scope, it is possible to obtain wider forbidden photon band.
Photonic crystal light trapping structure for thin-film solar cells the most according to claim 1, is characterized in that: described group
The cylinder medium becoming 2 D photon crystal is identical with absorbing layer of thin film solar cell medium, and transparent conductive medium is Indium sesquioxide.
Stannum (ITO).
Photonic crystal light trapping structure for thin-film solar cells the most according to claim 1, is characterized in that: described two
The structural parameters of dimensional photonic crystal are relevant with the kind of thin-film solar cells absorbing material, can be by changing 2 D photon crystal
The sunken optical property of the parameter adjustment bilayer 2 D photon crystals such as thickness, fill factor, curve factor and lattice paprmeter.
Photonic crystal light trapping structure for thin-film solar cells the most according to claim 1, is characterized in that: described two
Dimensional photonic crystal light trapping structure may apply in monocrystal silicon, polysilicon and amorphous silicon thin-film solar cell.
Photonic crystal light trapping structure for thin-film solar cells the most according to claim 1, is characterized in that: described group
The periodical media becoming 1-D photon crystal is respectively refraction and differs bigger silicon dioxide and amorphous silicon hydride.
Photonic crystal light trapping structure for thin-film solar cells the most according to claim 1, is characterized in that: described one
Dimensional photonic crystal periodic thickness is relevant with Refractive Index of Material, wherein: the thickness of silicon dioxide is 130nm, the thickness of amorphous silicon hydride
Degree is 50nm, and periodicity is 5.
Photonic crystal light trapping structure for thin-film solar cells the most according to claim 1, is characterized in that: by changing
The parameter becoming double-deck 2 D photon crystal light trapping structure and 1-D photon crystal catoptric arrangement can change the sunken light characteristic of entirety,
May apply in the thin-film solar cells of different absorbing material.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204386A (en) * | 2017-05-31 | 2017-09-26 | 浙江工业大学 | The method and thin-film solar cell structure of enhanced film solar cell photon absorption efficiency |
| CN113659037A (en) * | 2021-08-09 | 2021-11-16 | 北京理工大学 | Thin film photocell design method based on associated random photonic crystal design |
| CN118393614A (en) * | 2024-07-01 | 2024-07-26 | 粒芯科技(厦门)股份有限公司 | Quasi-photonic crystal structure, photon absorption structure and application |
| CN113659037B (en) * | 2021-08-09 | 2024-09-24 | 北京理工大学 | Film photocell design method based on associated random photon crystal design |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070235072A1 (en) * | 2006-04-10 | 2007-10-11 | Peter Bermel | Solar cell efficiencies through periodicity |
| CN102347383A (en) * | 2010-07-29 | 2012-02-08 | 海洋王照明科技股份有限公司 | Solar energy cell and preparation method thereof |
| GB2483445A (en) * | 2010-09-07 | 2012-03-14 | Univ Southampton | Solar cell with luminescent material |
-
2016
- 2016-05-16 CN CN201610320350.5A patent/CN105870220A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070235072A1 (en) * | 2006-04-10 | 2007-10-11 | Peter Bermel | Solar cell efficiencies through periodicity |
| CN102347383A (en) * | 2010-07-29 | 2012-02-08 | 海洋王照明科技股份有限公司 | Solar energy cell and preparation method thereof |
| GB2483445A (en) * | 2010-09-07 | 2012-03-14 | Univ Southampton | Solar cell with luminescent material |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204386A (en) * | 2017-05-31 | 2017-09-26 | 浙江工业大学 | The method and thin-film solar cell structure of enhanced film solar cell photon absorption efficiency |
| CN113659037A (en) * | 2021-08-09 | 2021-11-16 | 北京理工大学 | Thin film photocell design method based on associated random photonic crystal design |
| CN113659037B (en) * | 2021-08-09 | 2024-09-24 | 北京理工大学 | Film photocell design method based on associated random photon crystal design |
| CN118393614A (en) * | 2024-07-01 | 2024-07-26 | 粒芯科技(厦门)股份有限公司 | Quasi-photonic crystal structure, photon absorption structure and application |
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Application publication date: 20160817 |