CN113659037A - Thin film photocell design method based on associated random photonic crystal design - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 38
- 238000013461 design Methods 0.000 title claims abstract description 35
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 36
- 238000010521 absorption reaction Methods 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 14
- 238000004458 analytical method Methods 0.000 claims abstract description 11
- 238000012546 transfer Methods 0.000 claims abstract description 10
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 9
- 238000001020 plasma etching Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 5
- 238000005286 illumination Methods 0.000 claims abstract description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 238000006073 displacement reaction Methods 0.000 claims description 19
- 230000003595 spectral effect Effects 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 7
- 230000005484 gravity Effects 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000609 electron-beam lithography Methods 0.000 claims description 4
- 238000004088 simulation Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 238000012216 screening Methods 0.000 claims description 3
- 238000009827 uniform distribution Methods 0.000 claims description 3
- 238000004364 calculation method Methods 0.000 claims description 2
- 238000012512 characterization method Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims 1
- 238000000862 absorption spectrum Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
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Abstract
A thin film photovoltaic cell design method based on an associated random photonic crystal design, comprising: (1) preparing a thin film solar cell group; (2) drawing a two-dimensional photonic crystal structure on the top of the C-Si layer, and calculating the absorption of the whole stack; (3) selecting and optimizing parameters of a two-dimensional photonic crystal structure; (4) introducing a related disordered structure by using a perturbation method; (5) simulating solar illumination by adopting non-polarized light at normal incidence, researching the absorption performance of the pseudo-disordered crystal structure by using a strict coupled wave analysis method, and determining a design criterion for increasing the absorption net; (6) randomly generating different disordered structures; (7) forming a pseudo-disordered nanopattern; (8) using CHF3Reactive ion etching to transfer organic glass to SiO2A layer; (9) using SF6Ar mixture transfers the organic glass to the C-Si layer; (10) by continuousThe indium tin oxide layer covers the pattern C-Si layer and is used as a transparent front electrode of the thin-film solar cell; (11) the absorption of the film was measured using a micro-reflectance device.
Description
Technical Field
The invention relates to the technical field of photovoltaic cells, in particular to a thin film photovoltaic cell design method based on associated random photonic crystal design.
Background
Photonic Crystal (PC) based photon management schemes are a very flexible and promising strategy to achieve efficient capture of light by thin film (<10 μm thick) solar cells. Solar cells of optimized and ordered PC structures show higher absorption compared to unpatterned flat structures, but the absorption in the long wavelength range still needs to be improved. In most studies only very low thicknesses (<10 μm) were considered, leading to a low expected short circuit current of the final device, and in order to reach high levels of short circuit current, it is therefore necessary to consider using high quality materials with thicknesses exceeding 10 μm, such as crystalline silicon (C-Si), which can further improve the optical coupling and trapping mechanism of thin film solar cells by using additional resonance modes in the long wavelength range.
Disclosure of Invention
In order to overcome the defects of the prior art, the technical problem to be solved by the invention is to provide a thin film photovoltaic cell design method based on associated random photonic crystal design, which can generate wider resonance and higher spectral density of modes and can further enhance the absorption of a thin film crystalline silicon solar cell.
The technical scheme of the invention is as follows: the design method of the thin film photocell based on the associated random photonic crystal design comprises the following steps:
(1) preparing a thin film solar cell group; bonding the C-Si layer on an aluminum layer with the thickness of 1 mu m to be used as a rear view mirror and a back contact;
(2) drawing a two-dimensional photonic crystal structure on the top of the C-Si layer, calculating the absorption of the whole stack, and selecting the order and wavelength step length used for simulation to obtain an accurate numerical result;
(3) three parameters of the two-dimensional photonic crystal structure are selected and optimized, and the highest current density of the two-dimensional photonic crystal structure is determined by scanning and searching the three parameters within the technically realistic range, so that the completely optimized two-dimensional photonic crystal structure is obtained; three parameters of the two-dimensional photonic crystal structure include period Λ, air interfaceFilling fraction ff, etch depth h, where ff is pi r2/Λ2R is the radius of the cylindrical hole;
(4) introducing a related disordered structure by using a perturbation method, wherein each hole of the super cell moves from the original position, the displacement distance of the hole is dp, and the displacement angle is alpha;
(5) selecting 5 different average displacement values from the range of 25nm to 75nm, simulating different structures for each selected average displacement value, and determining the relationship between the distance and the gravity center of elements in the cluster; simulating solar illumination by adopting non-polarized light at normal incidence, researching the absorption performance of the pseudo disordered crystal structures by using a strict coupled wave analysis method, and determining a design rule for increasing the absorption net;
(6) randomly generating different disordered structures, screening out a pseudo-disordered design through the relationship of the spacing and the gravity center of elements in the cluster, and replacing the optimized square hole lattices with the optimized pseudo-disordered structure;
(7) forming pseudo-disordered nano patterns called pseudo-disordered crystal structures in a thin organic glass resist deposited on the top of a stack of crystals by using an electron beam lithography technique;
(8) using CHF3Reactive ion etching to transfer organic glass to SiO2A layer;
(9) using SF6Ar mixture transfers organic glass to a C-Si layer, SiO2The remainder of the layer remains on top of the Si pattern;
(10) covering the pattern C-Si layer with a continuous indium tin oxide layer to serve as a transparent front electrode of the thin-film solar cell;
(11) the absorption of the film is measured using a microscopic reflectance device, a beam of parallel white light is focused by a long-focus microscope objective onto the nanopattern structure, the reflected light from the structure is collected by the objective and then analyzed using a spectrometer.
The invention adopts the nanoimprint technology based on the copy master stamp and combines the transmission processes such as plasma etching and the like, and the pseudo-disordered structure provided by the invention can be realized by using the process completely identical to the optimized square hole lattice without additional cost. Therefore, using the design rules proposed in the present invention, and the associated nanomapping process, a broader resonance and higher spectral density of modes can be generated, which can further enhance the absorption of thin film crystalline silicon solar cells.
Drawings
Fig. 1 is a side view and a top view of a thin film solar cell structure of the present invention.
FIG. 2 is a perturbed schematic of the formation of a pseudo-disordered crystalline structure according to the present invention.
FIG. 3 is a scanning electron micrograph of the experimentally prepared structure.
FIG. 4 is a micro-reflectivity device for use with the present invention.
FIG. 5 is an absorption spectrum of an optimized pseudo-disordered structure and an optimized hole square lattice for a 2 μm thick C-Si layer stack.
FIG. 6 is a graph of the absorption spectrum of the optimized pseudo-disordered structure and the optimized hole square lattice at a wavelength of 850:950 nm.
FIG. 7 shows the optimal pseudo-random structure (triangle), the optimized hole square lattice structure (dot), and the unpatterned structure (square) JscAngle response map of (c).
Figure 8 is a flow chart of a method of designing a thin film photovoltaic cell based on an associated random photonic crystal design in accordance with the present invention.
Detailed Description
As shown in fig. 8, the design method of the thin film photovoltaic cell based on the associated random photonic crystal design comprises the following steps:
(1) preparing a thin film solar cell group; bonding the C-Si layer on an aluminum layer with the thickness of 1 mu m to be used as a rear view mirror and a back contact;
(2) drawing a two-dimensional photonic crystal structure on the top of the C-Si layer, calculating the absorption of the whole stack, and selecting the order and wavelength step length used for simulation to obtain an accurate numerical result;
(3) three parameters of the two-dimensional photonic crystal structure are selected and optimized, the highest current density of the two-dimensional photonic crystal structure is determined by scanning and searching the three parameters in the technically realistic range, and the completely optimized two-dimensional photonic crystal is obtainedA bulk structure; three parameters of the two-dimensional photonic crystal structure include period Λ, air interface filling fraction ff and corrosion depth h, wherein ff is pi r2/Λ2R is the radius of the cylindrical hole;
(4) introducing a related disordered structure by using a perturbation method, wherein each hole of the super cell moves from the original position, the displacement distance of the hole is dp, and the displacement angle is alpha;
(5) selecting 5 different average displacement values from the range of 25nm to 75nm, simulating different structures for each selected average displacement value, and determining the relationship between the distance and the gravity center of elements in the cluster; simulating solar illumination by adopting non-polarized light at normal incidence, researching the absorption performance of the pseudo disordered crystal structures by using a strict coupled wave analysis method, and determining a design rule for increasing the absorption net;
(6) randomly generating different disordered structures, screening out a pseudo-disordered design through the relationship of the spacing and the gravity center of elements in the cluster, and replacing the optimized square hole lattices with the optimized pseudo-disordered structure;
(7) forming pseudo-disordered nano patterns called pseudo-disordered crystal structures in a thin organic glass resist deposited on the top of a stack of crystals by using an electron beam lithography technique;
(8) using CHF3Reactive ion etching to transfer organic glass to SiO2A layer;
(9) using SF6Ar mixture transfers organic glass to a C-Si layer, SiO2The remainder of the layer remains on top of the Si pattern;
(10) covering the pattern C-Si layer with a continuous indium tin oxide layer to serve as a transparent front electrode of the thin-film solar cell;
(11) the absorption of the film is measured using a microscopic reflectance device, a beam of parallel white light is focused by a long-focus microscope objective onto the nanopattern structure, the reflected light from the structure is collected by the objective and then analyzed using a spectrometer.
The invention adopts the nanoimprint technology based on the copy master stamp and combines the transmission processes such as plasma etching and the like, and the pseudo-disordered structure provided by the invention can be realized by using the process completely identical to the optimized square hole lattice without additional cost. Therefore, using the design rules proposed in the present invention, and the associated nanomapping process, a broader resonance and higher spectral density of modes can be generated, which can further enhance the absorption of thin film crystalline silicon solar cells.
Preferably, in the step (1), the thickness of the C-Si layer is in the range of 1-8 μm.
Preferably, in the step (4), the moving distance dp is determined by a random gaussian distribution defined by a mean value and a width value thereof; the displacement angle alpha is determined by the uniform distribution.
Preferably, in said step (7), the nanopattern design is obtained by using an associated random number generator, PRNG, process.
Preferably, the size of the stencil area is limited to 100 x 100 μm2(ii) a The etching step is performed at a low pressure.
Preferably, in the RCWA code developed by the rigorous coupled wave analysis RCWA method, for each cylindrical hole, a fourier coefficient of a dielectric constant is calculated using an analytical bezier function; the calculation time of the rigorous coupled wave analysis RCWA method depends on a given spectral resolution.
Preferably, the unpolarized light spectral range is limited to 300-1100 nm; the spectral resolution of the solar cell is set depending on the thickness of the C-Si layer, and in the wavelength range of 300-700nm, the spectral resolution of the solar cell for all the thicknesses is set to be 1nm, while in the wavelength range of 700-1100nm, the spectral resolution is set to be 0.5nm for the C-Si layer with the thickness of 1/2/4 μm and is set to be 0.25nm for the C-Si layer with the thickness of 8 μm.
Preferably, the absorption properties of the pseudo-disordered crystalline structure are measured by current density JSCThe characterization is carried out by assuming that the carrier collection efficiency is 100 percent and the current density formula is
Wherein e is the unit charge of electrons, h is the Planck constant, c is the speed of light in vacuum, λ is the wavelength, A (λ) is the absorption, and dI/d λ is the incident solar radiation intensity corresponding to the AM1.5G solar spectrum.
As shown in fig. 5, the absorption spectrum peak of the optimal pseudo-random pattern becomes wider and the peak amplitude becomes smaller in comparison with the optimal pseudo-random structure having a large wavelength range (fig. 6).
Preferably, the determination of the pseudo-disordered crystalline structure absorption comprises absorption at oblique incidence.
Further, under the condition of laminating the C-Si layers with the thickness of 2 mu m, the optimal pseudo-disordered structure (triangle), the optimal hole square lattice structure (point) and the unpatterned structure (square) are at the determined oblique incidence angle theta and each cone angle
Lower JscThe results of averaging are shown in FIG. 7, where the pseudo-random structure yields a high J not only at normal incidence, but also over a large range of incidence anglessc。
The present invention will be described in more detail below.
The invention comprises the following steps:
s1, preparing a thin film solar cell group; pasting a thin absorption layer C-Si on a 1 mu m thick aluminum (Al) layer to be used as a rearview mirror and back contact, and respectively selecting 1, 2, 4 and 8 mu m thick C-Si layers considering that the thickness of the C-Si layer is within the range of 1-8 mu m;
s2, drawing a two-dimensional photonic crystal structure on the top of the C-Si layer, calculating the absorption of the whole stack by utilizing an internally developed analysis Rigorous Coupled Wave Analysis (RCWA) code, and selecting the order and wavelength step length used for simulation to obtain an accurate numerical result;
s3, selecting and optimizing three parameters of the two-dimensional photonic crystal structure, wherein the three parameters of the two-dimensional photonic crystal structure comprise a period (Λ), an air interface filling fraction (ff) and a corrosion depth (h), and the ff is pi r2/Λ2R is the radius of the cylindrical hole, and the highest current density of the two-dimensional photonic crystal structure is determined by scanning and searching the three parameters within the technically realistic range to obtain a completely optimized two-dimensional photonic crystal structure;
s4, a controllable disordered structure is designed by using a perturbation method. In this design, as shown in fig. 2, each hole of the super cell is shifted from its original position, the hole displacement distance is dp, the displacement angle is α, the value of dp is determined by gaussian distribution, and the displacement angle α is determined by uniform distribution; this perturbation process is then applied to N, which constitutes N supermonomers2A well, such as the 3 × 3 well shown in fig. 2; next, the supermonomers are copied into a square grid.
S5, selecting different average displacement values from the range of 25nm to 75nm, simulating different structures for each selected average displacement value, simulating solar illumination at normal incidence by adopting unpolarized light (average value of TE and TM), researching the absorption performance of the pseudo-disordered crystal structures in real space and Fourier space by using a strict coupled wave analysis (RCWA) method, and using current density (J) for the absorption performance of the pseudo-disordered crystal structuresSC) Characterizing, thereby determining a design criterion that results in a net increase in absorption;
s6, selecting an optimal pseudo-disordered structure from different simulated pseudo-disordered structures, and replacing the optimized square hole lattice with the optimized pseudo-disordered structure;
s7 forming pseudo-disordered nanopatterns in thin organic glass resists deposited on top of the stack of crystals using electron beam lithography, called pseudo-disordered crystalline structures, the size of the pseudo-disordered nanopattern template area being limited to 100 x 100 μm2；
S8, use of CHF in low pressure environment3Reactive ion etching to transfer organic glass to SiO2A layer;
s9, use of SF under Low pressure Environment6Ar mixture transfers organic glass to a C-Si layer, SiO2The remainder of the layer remains on top of the Si pattern;
s10, covering the pattern C-Si layer with a continuous Indium Tin Oxide (ITO) layer as a transparent front electrode of the thin film solar cell, and implementing an example of the structure as shown in fig. 3;
s11, measuring the absorption of the film using a micro-reflectivity device, as shown in fig. 4, a beam of nearly parallel white light is focused by a long focus microscope objective onto the nano-patterned structure, and the reflected light from the structure is collected by the objective and then analyzed using a spectrometer.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications, equivalent variations and modifications made to the above embodiment according to the technical spirit of the present invention still belong to the protection scope of the technical solution of the present invention.
Claims (9)
1. A thin film photocell design method based on associated random photonic crystal design is characterized in that: which comprises the following steps:
(1) preparing a thin film solar cell group; bonding the C-Si layer on an aluminum layer with the thickness of 1 mu m to be used as a rear view mirror and a back contact;
(2) drawing a two-dimensional photonic crystal structure on the top of the C-Si layer, calculating the absorption of the whole stack, and selecting the order and wavelength step length used for simulation to obtain an accurate numerical result;
(3) three parameters of the two-dimensional photonic crystal structure are selected and optimized, and the highest current density of the two-dimensional photonic crystal structure is determined by scanning and searching the three parameters within the technically realistic range, so that the completely optimized two-dimensional photonic crystal structure is obtained; three parameters of the two-dimensional photonic crystal structure include period Λ, air interface filling fraction ff and corrosion depth h, wherein ff is pi r2/Λ2R is the radius of the cylindrical hole;
(4) introducing a related disordered structure by using a perturbation method, wherein each hole of the super cell moves from the original position, the displacement distance of the hole is dp, and the displacement angle is alpha;
(5) selecting 5 different average displacement values from the range of 25nm to 75nm, simulating different structures for each selected average displacement value, and determining the relationship between the distance and the gravity center of elements in the cluster; simulating solar illumination by adopting non-polarized light at normal incidence, researching the absorption performance of the pseudo disordered crystal structures by using a strict coupled wave analysis method, and determining a design rule for increasing the absorption net;
(6) randomly generating different disordered structures, screening out a pseudo-disordered design through the relationship of the spacing and the gravity center of elements in the cluster, and replacing the optimized square hole lattices with the optimized pseudo-disordered structure;
(7) forming pseudo-disordered nano patterns called pseudo-disordered crystal structures in a thin organic glass resist deposited on the top of a stack of crystals by using an electron beam lithography technique;
(8) using CHF3Reactive ion etching to transfer organic glass to SiO2A layer;
(9) using SF6Ar mixture transfers organic glass to a C-Si layer, SiO2The remainder of the layer remains on top of the Si pattern;
(10) covering the pattern C-Si layer with a continuous indium tin oxide layer to serve as a transparent front electrode of the thin-film solar cell;
(11) the absorption of the film is measured using a microscopic reflectance device, a beam of parallel white light is focused by a long-focus microscope objective onto the nanopattern structure, the reflected light from the structure is collected by the objective and then analyzed using a spectrometer.
2. The method of claim 1 for designing a thin film photovoltaic cell based on an associated random photonic crystal design, wherein: in the step (1), the thickness of the C-Si layer is in the range of 1-8 μm.
3. The method of claim 2, wherein the method comprises: in the step (4), the moving distance dp is determined by random Gaussian distribution defined by the mean value and the width value; the displacement angle alpha is determined by the uniform distribution.
4. The method of claim 3 for designing a thin film photovoltaic cell based on an associated random photonic crystal design, wherein: in said step (7), the nanopattern design is obtained by using an associated random number generator, PRNG, process.
5. The correlation-based random photonic crystal of claim 4The design method of the designed thin film photovoltaic cell is characterized by comprising the following steps: the size of the stencil area is limited to 100X 100 μm2(ii) a The etching step is performed at a low pressure.
6. The method of claim 5 in which the design of the thin film photovoltaic cell based on an associated random photonic crystal design comprises: in the RCWA code developed by the RCWA method for rigorous coupled wave analysis, for each cylindrical hole, a Fourier coefficient of a dielectric constant is calculated by using an analytic Bessel function; the calculation time of the rigorous coupled wave analysis RCWA method depends on a given spectral resolution.
7. The method of claim 6, wherein the method comprises: the unpolarized light wavelength range is limited to 300-1100 nm; the spectral resolution of the solar cell is set depending on the thickness of the C-Si layer, and in the wavelength range of 300-700nm, the spectral resolution of the solar cell for all the thicknesses is set to be 1nm, while in the wavelength range of 700-1100nm, the spectral resolution is set to be 0.5nm for the C-Si layer with the thickness of 1/2/4 μm and is set to be 0.25nm for the C-Si layer with the thickness of 8 μm.
8. The method of claim 7, wherein the method comprises: current density J for absorption properties of the pseudo-disordered crystal structureSCThe characterization is carried out by assuming that the carrier collection efficiency is 100 percent and the current density formula is
Wherein e is the unit charge of electrons, h is the Planck constant, c is the speed of light in vacuum, λ is the wavelength, A (λ) is the absorption, and dI/d λ is the incident solar radiation intensity corresponding to the AM1.5G solar spectrum.
9. The method of claim 8, wherein the method comprises: the measurement of the pseudo-disordered crystalline structure absorption includes absorption at oblique incidence.
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| US20110203663A1 (en) * | 2010-02-22 | 2011-08-25 | Dennis Prather | Photonic crystal enhanced light trapping solar cell |
| CN103094390A (en) * | 2013-01-15 | 2013-05-08 | 河北师范大学 | Carbon-base photonic crystal back reflection device for film solar cell and manufacture method of carbon-base photonic crystal back reflection device |
| CN105870220A (en) * | 2016-05-16 | 2016-08-17 | 桂林电子科技大学 | Photonic crystal light trapping structure for thin film solar cell |
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2021
- 2021-08-09 CN CN202110907496.0A patent/CN113659037A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110203663A1 (en) * | 2010-02-22 | 2011-08-25 | Dennis Prather | Photonic crystal enhanced light trapping solar cell |
| CN103094390A (en) * | 2013-01-15 | 2013-05-08 | 河北师范大学 | Carbon-base photonic crystal back reflection device for film solar cell and manufacture method of carbon-base photonic crystal back reflection device |
| CN105870220A (en) * | 2016-05-16 | 2016-08-17 | 桂林电子科技大学 | Photonic crystal light trapping structure for thin film solar cell |
Non-Patent Citations (1)
| Title |
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| 闫明宝;朱冠芳;杨健;武晓亮;: "光子晶体波导传输特性的计算和模拟", 光通信研究, no. 01, pages 47 - 49 * |
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