CN101246928A - Back contact layer of thin film silicon solar cell - Google Patents
Back contact layer of thin film silicon solar cell Download PDFInfo
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- CN101246928A CN101246928A CNA2007100050867A CN200710005086A CN101246928A CN 101246928 A CN101246928 A CN 101246928A CN A2007100050867 A CNA2007100050867 A CN A2007100050867A CN 200710005086 A CN200710005086 A CN 200710005086A CN 101246928 A CN101246928 A CN 101246928A
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Abstract
The present invention discloses a new back-contact layer of film silicon solar cell. Although mini-type solar cell with silver back-contact layer has high efficiency, the silver is hardly to used credibly in produce of photovoltaic device based on film silicon because of bad stability and strengthening diffluence. In order to improve yield and stability and other metal material which has high reflectivity, low resistance coefficient, high stability and is easy compatible with transparent conductive oxide (TCO) like zinc oxide such as nickel-vanadium alloy, Pd or platinum and so on can be chosen as back-contact layer when producing high capability large area and low cost film silicon photovoltaic template.
Description
Technical field
The invention belongs to photovoltaic equipment field, specially refer to the silicon hydride thin film photovoltaic device technology.
Background technology
Back electrode is for the solar cell (also being called film photovoltaic or photoelectric device) of based thin film amorphous silicon hydride and nanocrystal silicon, especially it is important that the high-performance of large tracts of land photovoltaic module and reliability cause the pass, wherein catching luminous energy power efficiently, is indispensable factor for effectively catching weak absorbing light.Back electrode with high reflectance can be effectively in the unabsorbed longwave optical line reflection light echo volt device.Reflection is preferably carried out with a very big angle (diffuse transmission type), and long optical path is arranged when making light enter silicon layer once more like this, increasing its absorbed probability, thereby increases photoelectric current.
In the laboratory, obtained efficient good film amorphous silicon and nanocrystal silicon (nano-silicon) solar cell.This solar cell uses transparent conductive oxide film and reflective metallic film, preferably with zinc oxide and silver (ZnO/Ag) as back electrode.Yet the cooperation of this ZnO/Ag can produce serious problem.Thick silver layer can cause tangible shunting, and shunting can cause energy transformation ratio low again, thereby causes the output of photovoltaic module low.As time goes on, silver can lose the gloss of itself, and the reflecting power of the back electrode that ZnO/Ag makes will reduce.The diffusivity of silver self is very strong, and this has influenced the useful life of photovoltaic module (along with silver is penetrated into silicon layer, can produce shunting gradually).And, to compare with nickel or vanadium, silver is a kind of metal of costliness.So the consumption of restriction silver helps to reduce the production cost of photovoltaic module.
When the back electrode of ZnO/Ag was used for solar cell at first, people used thicker silicon layer.Because silicon thin film thicker (such as in three-joint solar cell and photovoltaic module) is not obvious by the branch flow problem that silver causes.Yet in order to produce more stable photovoltaic module, photovoltaic module of today is used thin silicon thin film instead.When using ZnO/Ag (perhaps simple silver), just be easy to produce the problem of shunting like this as the back electrode material.Even it is found that the diode for small size, ZnO/Ag electrically contacts also to electrically contact than ZnO/Al and more is easy to generate the branch flow problem.Current production comprises amorphous silicon, and during the photovoltaic module of the based thin film silicon of amorphous silicon germanium alloy nano crystal silicon, ZnO/Al is the standard material of people's general choice.Accompanying drawing has shown the layer structure of the p-i-n type photovoltaic device of a standard.The composition of this battery comprises glass substrate 1; The preceding electrode 2 of electrically conducting transparent; Based on the p-i-n structure of hydrogenated silicon film by utilizing, comprise p layer 6, i layer 8 and n layer 9 respectively; Transparent conductive oxide 22 (zinc oxide) and metal film 45.The back electrode of common silicon thin-film battery uses silver or aluminium.The film photovoltaic module that ZnO/Al makes is more long-lived, more reliable, but compares with ZnO/Ag, and its luminous reflectanc is far short of what is expected, so limited photoelectric conversion efficiency.Having superiority aspect output and the long-term behaviour as the back contact of thin film silicon photovoltaic module with ZnO/Al or Al, but power output is lower.Because the cost of photovoltaic module depends on its energy conversion efficiency (power output) to a great extent, so not good enough back reflector has seriously limited the commercial appeal of this device.The back electrode that ZnO/Al makes not only is difficult for causing shunting, even and produce the branch flow problem also than being easier to solve (by so-called " shunting weakens " program).Under many circumstances, use the photovoltaic module of the back electrode of ZnO/Ag, lower than the photovoltaic module energy transformation ratio that uses the ZnO/Al back electrode.This is that the increase of closed current is filled the reduction of the factor (and open circuit voltage) and offsets because when using ZnO/Ag as back electrode.
Because silver and aluminium all have obvious defects as the back electrode metal film, so be necessary to seek a kind of substituting reflective metal film.
Summary of the invention
Based on above-mentioned consideration, the applicant has worked out primary and foremost purpose of the present invention: provide a kind of novel back electrode that is applicable to thin film silicon solar cell, to improve photoelectric conversion efficiency.
Further purpose of the present invention is, uses novel back electrode to have the stability based on the solar cell of hydrogenated silicon film by utilizing of high conversion efficiency with improvement.
In order to reach the foregoing invention purpose, the present invention adopts a kind of metallic film of the TCO/ of can be used as metal backing contact layer, and this metallic film combines the high reflectance of silver and the stability of aluminium.Here TCO represents transparent conductive oxide, as zinc oxide (ZnO) or tin indium oxide (ITO) etc.Conductive metallic material with high reflectance comprises nickel-vanadium alloy (NiV, the vanadium of about 5-10% atomic concentration), nickel (Ni), indium (In), gold (Au), palladium (Pd) and platinum (Pt).Previous gold, palladium, the platinum that uses costs an arm and a leg, and is not suitable for making at low cost in a large number the film photovoltaic module.Simple indium is very soft, needs other layer of metal film to protect.The chromium that adhesive ability is good (Cr) is left out, because its reflection differences (no matter being separately as reflector or TCO/Cr laminated construction).Certainly, rhodium has fabulous reflectivity and conductivity, but for photovoltaic film that must low-cost production, it is too expensive.Therefore nickel-vanadium alloy is to replace silver and the aluminium ideal material as the thin film silicon photovoltaic device back contact.
As shown in drawings, the p-i-n type thin film silicon photovoltaic device of a standard comprises: a glass substrate 1; A preceding electric contacting layer 2 (a transparent conductive oxide TCO) as tin oxide; A p layer 6 comprises the film based on silicon of boron doped broad-band gap, as the non-crystal silicon carbon alloy; The i layer 8 that the thin film silicon of a non-doping is made; A n layer 9 of making by thin film silicon or its alloy of phosphorus doping; Another one transparent conductive oxide rete 22 and the metal film that conductivity is good and reflectivity is high 45.TCO22 and metal film 45 are together as the reflection back contact.According to the present invention, the formation of metal film 45 is a kind of metal or alloy that are different from traditional material silver or aluminium, particularly contains the nickel-vanadium alloy of 5-10% vanadium.This alloy has good reflectivity and conductivity, and highly stable, does not also cause the distributary phenomenon of photovoltaic device.So making, its use has good high-conversion rate and stability simultaneously based on silicon hydride thin film photovoltaic device.
Description of drawings
The present invention will be further described below in conjunction with drawings and Examples.
Accompanying drawing is the structural representation of a p-i-n type thin film silicon photovoltaic device.
Embodiment
The back contact of trial property comprises ZnO/NiV (7%V) and TiO
2The such double-decker of/NiV (5-10%V).The back electrode reflectivity height of this structure, good conductivity can stand various natural environments, under long-term solar radiation fabulous stability is arranged.
The best mode that this nickel vanadium metal film forms, be to use the magnetron sputtering technique of being convenient to large-area coating film, employed target preferably has the nickel-vanadium alloy of required atomic ratio, and needed like this alloy can use the disposable formation of independent target.
Claims (10)
1. photovoltaic device, it is characterized in that: this photovoltaic device comprises:
A) preceding electrode of electrically conducting transparent.This electrode is by doping type SnO
2Or the such transparent conductive oxide of doping type ZnO makes, and comprises the tin oxide (SnO that fluorine mixes
2: F) and the zinc oxide (ZnO:Al) that mixes of aluminium;
B) p-i-n laminated construction.This structure is made by the thin film silicon of non-doping or the alloy that is rich in silicon, comprises p layer, intrinsic (non-doping) i layer and n layer;
C) another one p-i-n laminated construction is used for forming many knot photovoltaic devices.Described many knot photovoltaic devices can with the such TCO film combination of ZnO:Al, form the such structure of p/i/n/ZnO/p/i/n, wherein the i layer can comprise different silicon alloy films, comprises silicon, the nanocrystal silicon of amorphous silicon, mixed-phase, perhaps out-phase silicon;
D) TCO rete.This rete comprises one or more by ZnO, ITO, SnO
2, TiO
2Or the other materials sublayer of making;
E) metal film.The thickness of this metal film preferably between the 100-300 nanometer, is made by nickel-vanadium alloy between the 20-1000 nanometer, and wherein the density of vanadium (mark) is 0-100%, and 3-25% is better, and 7-15% is best;
F) selectivity additional metal film or pellicular cascade.Be made from aluminum or silver, thickness is less than 500 nanometers.
2. photovoltaic device according to claim 1 is characterized in that: it is a photovoltaic element that comprises among the integrated device of a plurality of photovoltaic elements that are connected in series.
3. photovoltaic device according to claim 1 is characterized in that: it is encapsulated by other protective material or diaphragm, as glass substrate, and metal forming or polymer flake etc.
4. photovoltaic device according to claim 1 is characterized in that: its formation comprises hard or pliable and tough cover layer or substrate.
5. photovoltaic device according to claim 1 is characterized in that: the described metal film of being made by nickel-vanadium alloy comprises other metallic element.
6. photovoltaic device according to claim 1 is characterized in that: the thickness or the atomic component of described metal film are inhomogeneous.
7. photovoltaic device according to claim 1 is characterized in that: described TCO rete comprises a plurality of films, as ZnO/SiO/ZnO laminated construction or SnO
2/ ZnO double-decker, and other structure.
8. photovoltaic device according to claim 1 is characterized in that: the surface of described TCO rete is level and smooth or coarse granular.
9. photovoltaic device according to claim 1 is characterized in that: the metal of described other high reflectance of nickel-vanadium alloy metal membrane-coating or metal composite replace, and comprise gold, platinum, palladium or rhodium, and their alloy.
10. photovoltaic device according to claim 1, it is characterized in that: each film of described photovoltaic device is produced by coating technique, comprise chemical vapour deposition technique, plasma enhanced chemical vapor deposition method, sputtering method, various evaporation technique, or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100050867A CN101246928A (en) | 2007-02-14 | 2007-02-14 | Back contact layer of thin film silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100050867A CN101246928A (en) | 2007-02-14 | 2007-02-14 | Back contact layer of thin film silicon solar cell |
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| CNA2007100050867A Pending CN101246928A (en) | 2007-02-14 | 2007-02-14 | Back contact layer of thin film silicon solar cell |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101431127B (en) * | 2008-12-02 | 2010-06-30 | 华中科技大学 | Production method of flexible amorphous silicon thin-film solar cell |
| CN101800262A (en) * | 2008-08-21 | 2010-08-11 | 应用材料股份有限公司 | Solar cell substrates and methods of manufacture |
| CN101807611A (en) * | 2010-04-01 | 2010-08-18 | 中国石油大学(华东) | Palladium-doped carbon film material with photovoltaic effect |
| CN101997040A (en) * | 2009-08-13 | 2011-03-30 | 杜邦太阳能有限公司 | Process for making a multi-layer structure having transparent conductive oxide layers with textured surface and the structure made thereby |
| CN102097509A (en) * | 2010-11-24 | 2011-06-15 | 北京航空航天大学 | Design of five-layered structure of tandem thin-film amorphous silicon solar cell |
| CN102194898A (en) * | 2010-03-15 | 2011-09-21 | 常州天合光能有限公司 | Electric-conducting nickel paste for solar cell |
| CN102270672A (en) * | 2010-06-03 | 2011-12-07 | 上海空间电源研究所 | Multilayer back reflector structure used for thin-film solar cell |
| CN102615881A (en) * | 2012-03-27 | 2012-08-01 | 浙江华正新材料股份有限公司 | Back plate applied to back field passivation type solar cell and method for manufacturing back plate |
| CN103022255A (en) * | 2012-12-27 | 2013-04-03 | 沈阳工程学院 | Method for preparing ZnO/Al film on solar cell without introduced electrode |
| CN103016365A (en) * | 2011-09-20 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Fan with transparent thin-film solar cell |
| US9799781B2 (en) | 2013-11-08 | 2017-10-24 | Lg Electronics Inc. | Solar cell |
| CN117976744A (en) * | 2024-03-21 | 2024-05-03 | 金阳(泉州)新能源科技有限公司 | Back contact battery without monocrystalline silicon substrate, preparation method thereof and flexible battery assembly |
-
2007
- 2007-02-14 CN CNA2007100050867A patent/CN101246928A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101800262A (en) * | 2008-08-21 | 2010-08-11 | 应用材料股份有限公司 | Solar cell substrates and methods of manufacture |
| CN101431127B (en) * | 2008-12-02 | 2010-06-30 | 华中科技大学 | Production method of flexible amorphous silicon thin-film solar cell |
| CN101997040A (en) * | 2009-08-13 | 2011-03-30 | 杜邦太阳能有限公司 | Process for making a multi-layer structure having transparent conductive oxide layers with textured surface and the structure made thereby |
| CN101997040B (en) * | 2009-08-13 | 2012-12-12 | 杜邦太阳能有限公司 | Process for making a multi-layer structure having transparent conductive oxide layers with textured surface and the structure made thereby |
| CN102194898B (en) * | 2010-03-15 | 2013-03-27 | 常州天合光能有限公司 | Electric-conducting nickel paste for solar cell |
| CN102194898A (en) * | 2010-03-15 | 2011-09-21 | 常州天合光能有限公司 | Electric-conducting nickel paste for solar cell |
| CN101807611A (en) * | 2010-04-01 | 2010-08-18 | 中国石油大学(华东) | Palladium-doped carbon film material with photovoltaic effect |
| CN101807611B (en) * | 2010-04-01 | 2011-12-21 | 中国石油大学(华东) | Palladium-doped carbon film material with photovoltaic effect |
| CN102270672A (en) * | 2010-06-03 | 2011-12-07 | 上海空间电源研究所 | Multilayer back reflector structure used for thin-film solar cell |
| CN102097509A (en) * | 2010-11-24 | 2011-06-15 | 北京航空航天大学 | Design of five-layered structure of tandem thin-film amorphous silicon solar cell |
| CN103016365A (en) * | 2011-09-20 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Fan with transparent thin-film solar cell |
| CN102615881A (en) * | 2012-03-27 | 2012-08-01 | 浙江华正新材料股份有限公司 | Back plate applied to back field passivation type solar cell and method for manufacturing back plate |
| CN102615881B (en) * | 2012-03-27 | 2015-01-07 | 浙江华正新材料股份有限公司 | Back plate applied to back field passivation type solar cell and method for manufacturing back plate |
| CN103022255A (en) * | 2012-12-27 | 2013-04-03 | 沈阳工程学院 | Method for preparing ZnO/Al film on solar cell without introduced electrode |
| CN103022255B (en) * | 2012-12-27 | 2014-12-17 | 沈阳工程学院 | Method for preparing ZnO/Al film on solar cell without introduced electrode |
| US9799781B2 (en) | 2013-11-08 | 2017-10-24 | Lg Electronics Inc. | Solar cell |
| US10644171B2 (en) | 2013-11-08 | 2020-05-05 | Lg Electronics Inc. | Solar cell |
| CN117976744A (en) * | 2024-03-21 | 2024-05-03 | 金阳(泉州)新能源科技有限公司 | Back contact battery without monocrystalline silicon substrate, preparation method thereof and flexible battery assembly |
| CN117976744B (en) * | 2024-03-21 | 2024-07-02 | 金阳(泉州)新能源科技有限公司 | Back contact battery without monocrystalline silicon substrate, preparation method thereof and flexible battery assembly |
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Open date: 20080820 |