CN110544729A - CdTe double-sided solar cell and preparation method thereof - Google Patents
CdTe double-sided solar cell and preparation method thereof Download PDFInfo
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- 229910007709 ZnTe Inorganic materials 0.000 claims description 17
- 230000007704 transition Effects 0.000 claims description 16
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- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a CdTe double-sided solar cell and a preparation method thereof. The CdTe double-sided solar cell and the preparation method thereof have the advantages of simple structure and high solar energy utilization rate.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a CdTe double-sided solar cell and a preparation method thereof.
background
CdTe is a compound semiconductor whose gap width is most suitable for photoelectric energy conversion. The solar cell made of the semiconductor is a device for directly converting light energy into electric energy, and has high theoretical conversion efficiency. Cadmium telluride is easily deposited as a thin film in a large area, and the deposition rate is also high. Therefore, compared with a silicon solar cell, the cadmium telluride thin film solar cell has low manufacturing cost and is a novel solar cell with wide application prospect.
The conventional CdTe solar cell generally has a structure including a transparent substrate, a transparent conductive film, a window layer, a CdTe layer, and a back electrode, which are sequentially attached to each other. However, the existing CdTe solar cell has the following disadvantages: that is, only solar energy incident from the direction of the transparent substrate can be absorbed, and solar energy irradiated from the direction of the back electrode cannot be absorbed because of being blocked by the back electrode, so that the utilization rate of solar energy is low.
disclosure of Invention
the technical problem to be solved by the invention is to provide a CdTe double-sided solar cell which is simple in structure and high in solar energy utilization rate and a preparation method thereof.
the invention is realized by the following technical scheme:
A CdTe double-sided solar cell comprises a transparent substrate, a transparent conductive film, a window layer, a CdTe layer and a light-transmitting back electrode which are sequentially attached, wherein the light-transmitting back electrode comprises a high-work-function light-transmitting back electrode attached to the CdTe layer and a high-conductive light-transmitting back electrode attached to the high-work-function light-transmitting back electrode.
Optionally, the thickness of the high-work-function light-transmitting back electrode is 2nm to 100nm, and the thickness of the high-conductive light-transmitting back electrode is 100nm to 3 μm.
optionally, the high-work-function light-transmitting back electrode is made of a high-work-function material, and the high-conductivity light-transmitting back electrode is made of a high-conductivity light-transmitting material.
optionally, the high work function material is one or more of ZnTe, MoN, MgZnTe, CdZnTe, Cu-doped ZnTe, Ag-doped ZnTe, and Na-doped ZnTe, and the high conductive light-transmitting material is one or more of ITO, AZO, and BZO.
optionally, the transparent substrate is a glass substrate or a polycarbonate substrate.
a preparation method of a CdTe double-sided solar cell comprises the following steps:
s1: providing a transparent substrate and carrying out cleaning pretreatment on the transparent substrate;
s2: coating a film on one end face of the cleaned and pretreated transparent substrate with a transparent conductive film;
S3: coating a film window layer on the end face of the transparent conductive film, which is far away from the transparent substrate;
S4: coating a CdTe layer on the end face of the window layer, which is far away from the transparent conductive film;
S5: coating a film on the end surface of the CdTe layer, which is far away from the window layer, of the high-work-function light-transmitting back electrode;
S6: and the high-conductivity light-transmitting back electrode is coated on the end surface of the high-work-function light-transmitting back electrode, which is far away from the CdTe layer.
optionally, the coating method in steps S2, S3, S4, S5 and S6 is magnetron sputtering or chemical vapor deposition or liquid deposition.
Optionally, the high-conductivity light-transmitting back electrode includes a plurality of row lines and a plurality of column lines attached to the end face of the high-work-function light-transmitting back electrode, the row lines and the column lines form a grid structure, and the row lines and the column lines are made of a high-conductivity light-transmitting material.
Optionally, the coating method in step S6 is screen printing, shadow plate magnetron sputtering or 3D printing.
Optionally, the highly conductive light-transmitting back electrode further includes a transition layer, a plurality of row-shaped lines and a plurality of row-shaped lines, the transition layer is attached to the high-work-function light-transmitting back electrode, the row-shaped lines and the row-shaped lines are attached to an end face of the transition layer away from the high-work-function light-transmitting back electrode, the row-shaped lines and the row-shaped lines form a grid structure, and the transition layer, the row-shaped lines and the row-shaped lines are all made of a highly conductive light-transmitting material.
the invention has the beneficial effects that:
According to the technical scheme, the back electrode of the CdTe double-sided solar cell is a light-transmitting back electrode, and the light-transmitting back electrode comprises a high-work-function light-transmitting back electrode attached to a CdTe layer and a high-conductivity light-transmitting back electrode attached to the high-work-function light-transmitting back electrode. The direct contact between the high-work-function light-transmitting back electrode and the CdTe layer can reduce the contact potential barrier with the CdTe layer to form ohmic contact, so that the performance of the CdTe double-sided solar cell is improved. The high-conductivity light-transmitting back electrode is in contact with the high-work-function light-transmitting back electrode in an attaching mode to form a positive electrode, an external circuit is communicated with the high-conductivity light-transmitting back electrode and the transparent conductive film respectively to form a complete circuit, and therefore collection and utilization of electric energy are completed. After the novel light-transmitting back electrode is used, compared with an opaque back electrode made of carbon powder, Cu powder or a metal film in the prior art, sunlight incident from the direction of the light-transmitting back electrode can be absorbed as well, namely, the CdTe double-sided solar cell can absorb solar energy from both the directions of the transparent substrate and the light-transmitting back electrode, the solar energy utilization rate is improved, and further the working efficiency and the performance of the CdTe double-sided solar cell are improved.
Drawings
the following detailed description of embodiments of the invention is provided in conjunction with the appended drawings, in which:
Fig. 1 is a schematic overall structure diagram of a first embodiment of the present invention;
FIG. 2 is a schematic overall structure diagram of a second embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a high work function transmissive back electrode of a second embodiment of the present invention;
Fig. 4 is a schematic overall structure diagram of a third embodiment of the present invention.
Detailed Description
The first embodiment is as follows:
A CdTe double-sided solar cell, as shown in FIG. 1, comprises a transparent substrate 100, a transparent conductive film 200, a window layer 300, a CdTe layer 400 and a light-transmitting back electrode 500, which are sequentially attached, wherein the light-transmitting back electrode 500 comprises a high work function light-transmitting back electrode 501 attached to the CdTe layer 400 and a high conductive light-transmitting back electrode 502 attached to the high work function light-transmitting back electrode 501.
the working principle of the CdTe double-sided solar cell is as follows: the window layer 300 is made of an N-type semiconductor material with a large forbidden bandwidth, such as a CdS material and the like, the CdTe layer 400 is made of a P-type semiconductor material, the window layer 300 and the CdTe layer 400 form a P-N junction, sunlight irradiates on the P-N junction to form a new hole-electron pair, under the action of an electric field built in the P-N junction, photo-generated holes flow to the P region, namely the CdTe layer 400, the high-work-function light-transmitting back electrode 501 is attached to the CdTe layer 400, the high-conductivity light-transmitting back electrode 502 is attached to the high-work-function light-transmitting back electrode 501, the high-conductivity light-transmitting back electrode 502 forms a positive electrode, photo-generated electrons flow to the N region, namely the window layer 300, the transparent conductive film 200 attached to the window layer 300 forms a negative electrode, and an external circuit is connected with the high-conductivity light-transmitting.
In the embodiment, the transparent substrate 100 mainly supports the CdTe double-sided solar cell, prevents contamination, and emits sunlight, the transparent conductive film 200 is generally a transparent conductive oxide layer, i.e., TCO layer, and mainly plays a role of light transmission and electrical conduction, the back electrode of the CdTe double-sided solar cell is a light-transmitting back electrode 500, and the light-transmitting back electrode 500 includes a high work function light-transmitting back electrode 501 attached to the CdTe layer 400 and a high electrical conduction light-transmitting back electrode 502 attached to the high work function light-transmitting back electrode 501. The high-work-function light-transmitting back electrode 501 is directly attached to the CdTe layer, so that the contact potential barrier with the CdTe layer can be reduced, ohmic contact is formed, and the performance of the CdTe double-sided solar cell is improved. The high-conductivity light-transmitting back electrode 502 is of a complete plate-shaped structure, the high-conductivity light-transmitting back electrode 502 and the high-work-function light-transmitting back electrode 501 are attached to form a positive electrode, an external circuit is respectively communicated with the high-conductivity light-transmitting back electrode 502 and the transparent conductive film 200 to form a complete circuit, and then electric energy collection or utilization is completed, the positive electrode is made of a high-conductivity material, so that electric energy loss is reduced, and the performance of the CdTe double-sided solar cell is further improved. After the novel light-transmitting back electrode 500 is used, compared with an opaque back electrode made of carbon powder, Cu powder or a metal film in the prior art, the solar energy incident from the direction of the light-transmitting back electrode 500 can be absorbed, namely, the CdTe double-sided solar cell can absorb the solar energy from the two directions of the transparent substrate 100 and the light-transmitting back electrode 500, so that the solar energy utilization rate is improved, and further, the working efficiency and the performance of the CdTe double-sided solar cell are improved. Note that the high work function in this embodiment means a work function (work function) of not less than 4.5 eV.
further, the thickness of the high-work-function light-transmitting back electrode 501 is preferably 2nm to 100nm, and the thickness of the high-conductive light-transmitting back electrode 502 is preferably 100nm to 3 μm. The high-work-function light-transmitting back electrode 501 is made of a high-work-function material, and the high-conductive light-transmitting back electrode 502 is made of a high-conductive light-transmitting material. The high work function material is one or more of ZnTe, MoN, MgZnTe, CdZnTe, Cu-doped ZnTe, Ag-doped ZnTe and Na-doped ZnTe, and the high-conductivity light-transmitting material is one or more of ITO, AZO and BZO. After the high-work-function light-transmitting back electrode 501 is directly attached to the CdTe layer 400, not only can the contact potential barrier with the CdTe layer 400 be reduced and ohmic contact is formed, so that the performance of the CdTe double-sided solar cell is improved, but also the thickness of the high-work-function light-transmitting back electrode 501 is preferably 2 nm-100 nm, and because the thickness is in a nanometer level, when the high-work-function light-transmitting back electrode 501 is prepared by adopting the above high-work-function material, the incidence of sunlight cannot be influenced by a part of the material with lower light transmittance, and further the CdTe layer 400 can absorb the sunlight emitted from the transparent back electrode 500. The thin films made of ITO, AZO, and BZO all have high conductivity and high visible light transmittance, and are preferred materials for preparing the highly conductive light-transmitting back electrode 502. IT0 is abbreviated as tin-doped indium oxide, AZO is abbreviated as aluminum-doped zinc oxide, and BZO is abbreviated as boron-doped zinc oxide. In addition, the high work function material can also be P-doped ZnTe, N-doped ZnTe, As-doped ZnTe, Sb-doped ZnTe, Au-doped ZnTe, Cu-doped MgZnTe, Cu-doped CdZnTe and the like.
Further, the transparent substrate 100 is a glass substrate or a polycarbonate substrate. The glass substrate or the polycarbonate substrate has good light transmission performance.
a preparation method of a CdTe double-sided solar cell comprises the following steps:
S1: providing a transparent substrate 100 and performing cleaning pretreatment on the transparent substrate;
S2: coating a film on one end face of the cleaned and pretreated transparent substrate 100 with a transparent conductive film 200;
s3: coating a film window layer 300 on the end face of the transparent conductive film 200 departing from the transparent substrate 100;
S4: plating a CdTe layer 400 on the end surface of the window layer 300, which is far away from the transparent conductive film 200;
S5: coating a film on the end surface of the CdTe layer 400, which is far away from the window layer 300, with a high-work-function light-transmitting back electrode 501;
S6: the high-conductivity light-transmitting back electrode 502 is coated on the end surface of the high-work-function light-transmitting back electrode 501, which faces away from the CdTe layer 400.
Further, the coating methods in steps S2, S3, S4, S5 and S6 are magnetron sputtering or chemical vapor deposition or liquid deposition. The method adopts the film coating methods such as magnetron sputtering, chemical vapor deposition, liquid deposition and the like, and has the advantages of simple process, low energy consumption and small environmental pollution.
example two:
the CdTe bifacial solar cell provided in this embodiment is substantially the same as that of the first embodiment, but the main difference is that the structure of the highly conductive and transparent back electrode 502 of this embodiment is different from that of the first embodiment. As shown in fig. 1, the highly conductive and transmissive back electrode 502 of the first embodiment is a complete plate-shaped structure, and in this embodiment, as shown in fig. 2 and fig. 3, the highly conductive and transmissive back electrode 502 includes a plurality of column lines 5020 and a plurality of row lines 5021 attached to the end surface of the highly work-function transmissive back electrode 501, and the column lines 5020 and the row lines 5021 form a grid-shaped structure. Compared with the first embodiment in which the highly conductive transparent back electrode 502 is a complete plate-shaped structure, the highly conductive transparent back electrode 502 configured as a grid-shaped structure has better flexibility and transparency, and saves materials.
in this embodiment, the coating method for coating the highly conductive and light transmissive back electrode 502 in step S6 is screen printing, shadow mask magnetron sputtering or 3D printing. The high-conductivity light-transmitting back electrode 502 with the latticed structure can be prepared by screen printing, shadow plate magnetron sputtering and 3D printing, and meanwhile, the method is simple in process, low in energy consumption and small in environmental pollution.
example three:
The CdTe bifacial solar cell provided in this embodiment is substantially the same as that of the first embodiment, but the main difference is that the structure of the highly conductive and transparent back electrode 502 of this embodiment is different from that of the first embodiment. As shown in fig. 4, the highly conductive light-transmitting back electrode 502 includes a transition layer 5022, a plurality of row-shaped lines 5020 and a plurality of row-shaped lines 5021, the transition layer 5022 is attached to the high-work-function light-transmitting back electrode 501, the row-shaped lines 5020 and the row-shaped lines 5021 are attached to an end face of the transition layer 5022 away from the high-work-function light-transmitting back electrode 501, the row-shaped lines 5020 and the row-shaped lines 5021 form a grid structure, and the transition layer 5022, the row-shaped lines 5020 and the row-shaped lines 5021 are all made of a highly conductive light-transmitting material. Compared with the embodiment in which a complete high-conductivity light-transmitting back electrode 502 with a plate-shaped structure is attached to the high-work-function light-transmitting back electrode 501, in the first embodiment, the column-shaped lines 5020 and the row-shaped lines 5021 form a grid-shaped structure, which not only has better flexibility and better transparency, but also saves materials, a very thin transition layer 5022 is arranged between the column-shaped lines 5020, the row-shaped lines 5021 and the high-work-function light-transmitting back electrode 501, and compared with the embodiment in which the column-shaped lines 5020, the row-shaped lines 5021 and the high-work-function light-transmitting back electrode 501 are in direct contact, the transition layer 5022 is completely attached to the high-work-function light-transmitting back electrode 501, so that charges on the high-work-function light-transmitting back electrode 501 are greatly increased through the cross section of the high-conductivity light-transmitting back electrode.
in this embodiment, the high-conductivity light-transmitting back electrode 502 may be integrally formed and coated on the high-work-function light-transmitting back electrode 501 by screen printing, shadow plate magnetron sputtering, 3D printing, or other methods. The transition layer 5022 can be coated on the high-work-function light-transmitting back electrode 501 by magnetron sputtering, chemical vapor deposition or liquid deposition, and the like, and then the row lines 5020 and the row lines 5021 are coated on the transition layer 5022 by screen printing, shadow plate magnetron sputtering, 3D printing or the like.
the above embodiments are only for illustrating the technical solutions of the present invention and are not limited thereto, and any modification or equivalent replacement without departing from the spirit and scope of the present invention should be covered within the technical solutions of the present invention.
Claims (10)
1. A CdTe bifacial solar cell, comprising: the transparent back electrode comprises a transparent substrate (100), a transparent conductive film (200), a window layer (300), a CdTe layer (400) and a light-transmitting back electrode (500) which are sequentially attached, wherein the light-transmitting back electrode (500) comprises a high-work-function light-transmitting back electrode (501) attached to the CdTe layer (400) and a high-conductive light-transmitting back electrode (502) attached to the high-work-function light-transmitting back electrode (501).
2. The CdTe bifacial solar cell of claim 1, wherein: the thickness of the high-work-function light-transmitting back electrode (501) is 2 nm-100 nm, and the thickness of the high-conductive light-transmitting back electrode (502) is 100 nm-3 mu m.
3. The CdTe bifacial solar cell of claim 2, wherein: the high-work-function light-transmitting back electrode (501) is made of a high-work-function material, and the high-conductive light-transmitting back electrode (502) is made of a high-conductive light-transmitting material.
4. the CdTe bifacial solar cell of claim 3, wherein: the high-work-function material is one or more of ZnTe, MoN, MgZnTe, CdZnTe, Cu-doped ZnTe, Ag-doped ZnTe and Na-doped ZnTe, and the high-conductivity light-transmitting material is one or more of ITO, AZO and BZO.
5. the CdTe bifacial solar cell of any one of claims 1 to 4, wherein: the transparent substrate (100) is a glass substrate or a polycarbonate substrate.
6. a preparation method of a CdTe double-sided solar cell is characterized by comprising the following steps:
S1: providing a transparent substrate (100) and carrying out cleaning pretreatment on the transparent substrate;
S2: plating a film on one end face of the transparent substrate (100) after cleaning pretreatment with a transparent conductive film (200);
S3: plating a film window layer (300) on the end face, deviating from the transparent substrate (100), of the transparent conductive film (200);
S4: plating a CdTe layer (400) on the end face, away from the transparent conductive film (200), of the window layer (300);
S5: plating a film on the end surface of the CdTe layer (400) which is far away from the window layer (300) to form a high-work-function light-transmitting back electrode (501);
S6: and coating a high-conductivity light-transmitting back electrode (502) on the end surface of the high-work-function light-transmitting back electrode (501) departing from the CdTe layer (400).
7. The method for preparing a CdTe bifacial solar cell as defined in claim 6, wherein: the coating method in the steps S2, S3, S4, S5 and S6 is magnetron sputtering or chemical vapor deposition or liquid deposition.
8. The method for preparing a CdTe bifacial solar cell as defined in claim 6, wherein: the high-conductivity light-transmitting back electrode (502) comprises a plurality of column-shaped lines (5020) and a plurality of row-shaped lines (5021) which are attached to the end face of the high-work-function light-transmitting back electrode (501), the column-shaped lines (5020) and the row-shaped lines (5021) form a grid structure, and the column-shaped lines (5020) and the row-shaped lines (5021) are made of high-conductivity light-transmitting materials.
9. The method for preparing a CdTe bifacial solar cell according to claim 8, wherein: the coating method in the step S6 is screen printing, shadow plate magnetron sputtering or 3D printing.
10. the method for preparing a CdTe bifacial solar cell as defined in claim 6, wherein: high electrically conductive printing opacity back electrode (502) are including transition layer (5022), a plurality of row form lines (5020) and a plurality of line form lines (5021), transition layer (5022) subsides are located on high work function printing opacity back electrode (501), row form lines (5020) with line form lines (5021) subsides are located transition layer (5022) deviates from on the terminal surface of high work function printing opacity back electrode (501), row form lines (5020) with latticed structure is constituteed to line form lines (5021), transition layer (5022), row form lines (5020) and line form lines (5021) are formed by the preparation of high electrically conductive printing opacity material.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111697094A (en) * | 2020-05-11 | 2020-09-22 | 成都中建材光电材料有限公司 | Light-transmitting double-sided cadmium telluride power generation glass and preparation method thereof |
| CN111697085A (en) * | 2020-05-25 | 2020-09-22 | 中国建材国际工程集团有限公司 | Double-sided light-transmitting cadmium telluride solar cell and preparation method thereof |
| CN112909101A (en) * | 2021-01-18 | 2021-06-04 | 中山德华芯片技术有限公司 | Solar cell and manufacturing method thereof |
| CN113555451A (en) * | 2020-04-23 | 2021-10-26 | 南方科技大学 | Preparation method of transparent photoelectric device and transparent photoelectric device |
| CN114944435A (en) * | 2022-05-17 | 2022-08-26 | 河南宸亚商业运营管理有限公司 | Light-transmitting double-sided power generation thin-film solar module and preparation process thereof |
| CN115064605A (en) * | 2022-05-17 | 2022-09-16 | 中国建材国际工程集团有限公司 | Cadmium telluride thin film solar cell with transition layer and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103563088A (en) * | 2011-03-15 | 2014-02-05 | 迅力光能26有限责任公司 | Intrinsically semitransparent solar cell and method of making same |
| CN105161561A (en) * | 2015-07-13 | 2015-12-16 | 四川大学 | Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell |
| WO2017081477A1 (en) * | 2015-11-13 | 2017-05-18 | The University Of Liverpool | Thin film solar cell |
| CN107749432A (en) * | 2017-11-06 | 2018-03-02 | 成都中建材光电材料有限公司 | A kind of CdTe thin film solar cell and preparation method thereof |
| CN108987516A (en) * | 2018-08-10 | 2018-12-11 | 广东爱旭科技股份有限公司 | Latticed two-sided direct-connected solar cell module and preparation method |
-
2019
- 2019-08-09 CN CN201910734691.0A patent/CN110544729A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103563088A (en) * | 2011-03-15 | 2014-02-05 | 迅力光能26有限责任公司 | Intrinsically semitransparent solar cell and method of making same |
| CN105161561A (en) * | 2015-07-13 | 2015-12-16 | 四川大学 | Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell |
| WO2017081477A1 (en) * | 2015-11-13 | 2017-05-18 | The University Of Liverpool | Thin film solar cell |
| CN107749432A (en) * | 2017-11-06 | 2018-03-02 | 成都中建材光电材料有限公司 | A kind of CdTe thin film solar cell and preparation method thereof |
| CN108987516A (en) * | 2018-08-10 | 2018-12-11 | 广东爱旭科技股份有限公司 | Latticed two-sided direct-connected solar cell module and preparation method |
Non-Patent Citations (1)
| Title |
|---|
| A.ROMEO ET AL.: "Bifacial configurations for CdTe solar cells", 《SOLAR ENERGY MATERIALS & SOLAR CELLS》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113555451A (en) * | 2020-04-23 | 2021-10-26 | 南方科技大学 | Preparation method of transparent photoelectric device and transparent photoelectric device |
| CN111697094A (en) * | 2020-05-11 | 2020-09-22 | 成都中建材光电材料有限公司 | Light-transmitting double-sided cadmium telluride power generation glass and preparation method thereof |
| CN111697085A (en) * | 2020-05-25 | 2020-09-22 | 中国建材国际工程集团有限公司 | Double-sided light-transmitting cadmium telluride solar cell and preparation method thereof |
| CN112909101A (en) * | 2021-01-18 | 2021-06-04 | 中山德华芯片技术有限公司 | Solar cell and manufacturing method thereof |
| CN112909101B (en) * | 2021-01-18 | 2021-12-14 | 中山德华芯片技术有限公司 | Solar cell and manufacturing method thereof |
| CN114944435A (en) * | 2022-05-17 | 2022-08-26 | 河南宸亚商业运营管理有限公司 | Light-transmitting double-sided power generation thin-film solar module and preparation process thereof |
| CN115064605A (en) * | 2022-05-17 | 2022-09-16 | 中国建材国际工程集团有限公司 | Cadmium telluride thin film solar cell with transition layer and preparation method thereof |
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Application publication date: 20191206 |