CN105161561A - Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell - Google Patents
Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell Download PDFInfo
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- CN105161561A CN105161561A CN201510404295.3A CN201510404295A CN105161561A CN 105161561 A CN105161561 A CN 105161561A CN 201510404295 A CN201510404295 A CN 201510404295A CN 105161561 A CN105161561 A CN 105161561A
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- Prior art keywords
- solar cell
- film
- film solar
- transparent
- cdznte
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- 229910004611 CdZnTe Inorganic materials 0.000 title abstract 6
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 title 1
- 239000010409 thin film Substances 0.000 claims description 27
- 239000010408 film Substances 0.000 claims description 25
- 229910052714 tellurium Inorganic materials 0.000 claims description 14
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 13
- 229910007709 ZnTe Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052793 cadmium Inorganic materials 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 229910052725 zinc Inorganic materials 0.000 abstract description 5
- 239000011701 zinc Substances 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 210000001142 back Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 150000003497 tellurium Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention belongs to the new energy material and device field and especially relates to a semi-transparent CdZnTe film solar cell used for exterior walls of buildings. A CdZnTe film serves as the absorption layer material of the film solar cell. The CdZnTe (material) is a direct gap semiconductor and has a high visible light absorption coefficient. The forbidden bandwidth of the CdZnTe can change from 1.5 eV to 2.2 eV with an increase in the zinc content. Therefore, film materials in different colors can be made by adjusting the proportions of the zinc and cadmium elements. The semi-transparent CdZnTe film solar cell structure is further formed by further adding transparent electrodes in the front and the back of the film materials. The semi-transparent film solar cell can have partial sunlight transmitted and further generate power with relatively high conversion efficiency. Therefore, the semi-transparent film solar cell becomes an ideal curtain wall for building integration.
Description
Technical field
Field belonging to this invention is new energy field, particularly a kind of translucent thin film solar cell for skin.
Background technology
Solar cell utilize solar energy produce electric energy, but due to the power density conversion efficiency that is lower and solar cell of sunlight not high, make the construction in solar cell power station need to take large-area soil to accept enough sunlight.In the city that population is relatively concentrated and area, from the view point of Economization on land, integrated photovoltaic building is arisen at the historic moment.The feature of integrated photovoltaic building is that solar cell is covered building surface, makes the metope of building have the function of photovoltaic generation simultaneously, meets the power consumption in part building, thus effectively realize the object of energy-saving and emission-reduction.
Solar cell at present for integrated photovoltaic building has monocrystalline silicon battery, polycrystal silicon cell and amorphous silicon battery, and the feature of monocrystalline silicon and polycrystal silicon cell is that conversion efficiency is high, and technical maturity large area can be installed on building wall etc.But these two kinds of batteries do not have the feature of printing opacity, can not be used for the building higher to daylighting requirement, therefore translucent solar cell is suitable as the building use of integrated photovoltaic more.Amorphous silicon film battery is used successfully to building, but silicon materials are indirect gap semiconductors, lower to the absorption coefficient of sunlight, and adding it is non-crystalline material, and the conversion efficiency of this kind of single junction cell assembly only has about 7 ~ 8% usually, and generating efficiency is very low.
What Chinese patent CN101276854A and CN102254966A all proposed is tellurium zincium vestalium thin-film solar cell, is characterized in by utilizing the tellurium zincium vestalium thin-film with graded bandgap as the absorbed layer of battery, thus improves the absorption region to solar spectrum.But this tellurium zincium vestalium thin-film solar cell has tellurium zinc cadmium or the Cadimium telluride thin film of hundreds of ~ several thousand nanometer due to absorbed layer, also has the opaque back electrode material of tens nanometers, makes whole battery light tight, be therefore not suitable for use in the translucent curtain wall of building.
Summary of the invention
The object of the invention is the translucent thin film solar cell proposing a kind of new high-efficiency.The basic thought of the method utilizes tellurium zincium vestalium thin-film as the absorbed layer material of thin film solar cell, because tellurium zinc cadmium is direct gap semiconductor, to the absorption coefficient of visible ray up to 10
5cm
-1and its energy gap is along with the relative amount of zinc, cadmium is from 1.5eV alterable to 2.2eV, therefore can prepare the thin-film material with different visible light ABSORPTION EDGE (different colours) by the ratio of modulation zinc, cadmium element, the transparency electrode before and after adding just can form translucent thin-film solar cell structure.This translucent thin film solar cell can permeation parts sunlight, also can generate electricity with higher conversion efficiency, thus become the desirable curtain wall of architecture-integral.
For realizing the object of the invention, the technical scheme that the present invention is made up of following measures realizes.White glass substrate is prepared transparent conductive film layer, n-type window layer, tellurium zinc Cd uptake layer, transparent dorsum electrode layer successively.Nesa coating (being called for short TCO) is ITO, SnO
2: F(FTO) or the N-shaped material such as ZnO:Al(ZTO), n-type window layer material is CdS or ZnS film.We show the result of study in early stage, and the energy gap of Cadimium telluride thin film and the relational expression of zinc component x are E
g=1.525+0.675x, therefore translucent Cd
1-xzn
xthe x of Te absorbed layer should between 0.1 ~ 1, and thickness is 100nm ~ 500nm.Battery structure has the following two kinds, (1) above-mentioned Cd
1-xzn
xte film is intrinsic material, and battery adopts n-i-p structure, and N-shaped CdS or ZnS film are window layer material, Cd
1-xzn
xte Intrinsic Gettering layer is as i layer, and ZnTe:Cu film is as p-type back contact, and transparent back electrode adopts p-type transparent conductive film (CuAlO
2or ZnO:N), as Fig. 1.(2) above-mentioned Cd
1-xzn
xte film is p-type material (as after mixing copper), and battery adopts n-p junction structure, and N-shaped ZnS film is window layer material, Cd
1-xzn
xte thin-film material is as p layer, and transparent back electrode adopts grapheme material, as Fig. 2.
Accompanying drawing explanation
Fig. 1 is TCO/CdS/Cd
1-xzn
xthe tellurium zincium vestalium thin-film solar cell of Te/ZnTe:Cu/p type transparent conductive film structure.
Fig. 2 is TCO/ZnS/Cd
1-xzn
xthe tellurium zincium vestalium thin-film solar cell of Te:Cu/ graphene-structured.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described, but content of the present invention is not limited only to the content that relates in embodiment.
embodiment one:
The first translucent Cd
1-xzn
xas shown in Figure 1, battery is n-i-p structure to Te thin-film solar cell structure.At SnO
2: in the substrate of F/CdS room temperature, first coevaporation together with CdTe with ZnTe is formed Cd to substrate
1-xzn
xte film, x is between 0.1 ~ 1, and thickness is 100nm ~ 500nm.By the Cd that evaporation obtains
1-xzn
xte film takes out, and 300 DEG C ~ 350 DEG C annealing in drying nitrogen, are incubated 30 minutes, then naturally cool to room temperature.By the method for evaporating at Cd
1-xzn
xznTe:Cu film prepared by Te film, thickness 50nm, then carry out 150 DEG C ~ 200 DEG C heat treatments at annealing furnace nitrogen atmosphere.Finally make the transparent back electrode of p-type with sputtering method plating 200nmZnO:N film.Obtain the first translucent Cd thus
1-xzn
xte thin film solar cell.
embodiment two:
The translucent Cd of the second
1-xzn
xas shown in Figure 2, battery is n-p junction structure to Te thin-film solar cell structure.At SnO
2: in the substrate of F/ZnS room temperature, first cosputtering together with CdTe, ZnTe and Cu tri-targets is formed Cd to substrate
1-xzn
xte:Cu film, x is between 0.1 ~ 1, and thickness is 100nm ~ 500nm.By the Cd that sputtering obtains
1-xzn
xte:Cu film takes out, and 300 DEG C ~ 350 DEG C annealing in drying nitrogen, are incubated 30 minutes, then naturally cool to room temperature.Plate 50 layer graphene films with sputtering method and make transparent back electrode.Obtain the translucent Cd of the second thus
1-xzn
xte thin film solar cell.
Claims (7)
1. a translucent tellurium zincium vestalium thin-film solar cell, is characterized in that having the following two kinds structure: (1) TCO/CdS/Cd
1-xzn
xthe transparent back electrode of Te/ZnTe:Cu/; (2) TCO/CdS/Cd
1-xzn
xthe transparent back electrode of Te:Cu/.
2. structure as claimed in claim 1 is TCO/CdS/Cd
1-xzn
xthe translucent tellurium zincium vestalium thin-film solar cell of the transparent back electrode of Te/ZnTe:Cu/, is characterized in that first depositing one deck Cd on TCO/CdS substrate
1-xzn
xte film, then sequential aggradation ZnTe:Cu film and transparent back electrode.
3. structure as claimed in claim 1 is TCO/CdS/Cd
1-xzn
xthe translucent tellurium zincium vestalium thin-film solar cell of the transparent back electrode of Te:Cu/, is characterized in that first depositing one deck Cd on TCO/CdS substrate
1-xzn
xte:Cu film, then deposit transparent back electrode.
4. translucent tellurium zincium vestalium thin-film solar cell as claimed in claim 1, is characterized in that Cd
1-xzn
xthe x of Te film should meet 0.1≤x≤1, and the band gap of respective films changes between 1.6eV ~ 2.2eV.
5. translucent tellurium zincium vestalium thin-film solar cell as claimed in claim 1, is characterized in that Cd
1-xzn
xte or Cd
1-xzn
xthe thickness of Te:Cu film is at 100nm ~ 500nm.
6. translucent tellurium zincium vestalium thin-film solar cell as claimed in claim 1, is characterized in that p-type Cd
1-xzn
xte:Cu film adopts Cu to make dopant.
7. translucent tellurium zincium vestalium thin-film solar cell as claimed in claim 1, is characterized in that transparent back electrode adopts p-type nesa coating (CuAlO
2or p-ZnO) or Graphene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510404295.3A CN105161561A (en) | 2015-07-13 | 2015-07-13 | Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510404295.3A CN105161561A (en) | 2015-07-13 | 2015-07-13 | Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105161561A true CN105161561A (en) | 2015-12-16 |
Family
ID=54802374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510404295.3A Pending CN105161561A (en) | 2015-07-13 | 2015-07-13 | Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105161561A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789455A (en) * | 2016-03-24 | 2016-07-20 | 浙江零维光伏科技有限公司 | Element doping method for organic thin film solar cell |
| CN109545881A (en) * | 2018-10-29 | 2019-03-29 | 四川大学 | A kind of CdS/CdTe solar cell of based single crystal silicon chip substrate |
| CN110544729A (en) * | 2019-08-09 | 2019-12-06 | 中山瑞科新能源有限公司 | CdTe double-sided solar cell and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276854A (en) * | 2008-05-09 | 2008-10-01 | 上海太阳能电池研究与发展中心 | Tellurium zincium vestalium thin-film solar cell |
| CN102254966A (en) * | 2011-06-23 | 2011-11-23 | 上海太阳能电池研究与发展中心 | CdZnTe (cadmium zinc telluride) thin film solar cell with gradient band gap structure |
| CN102893408A (en) * | 2010-05-13 | 2013-01-23 | 第一太阳能有限公司 | Photovotaic device conducting layer |
| US20140000690A1 (en) * | 2011-03-15 | 2014-01-02 | Victor V. Plotnikov | Intrinsically Semitransparent Solar Cell and Method of Making Same |
-
2015
- 2015-07-13 CN CN201510404295.3A patent/CN105161561A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276854A (en) * | 2008-05-09 | 2008-10-01 | 上海太阳能电池研究与发展中心 | Tellurium zincium vestalium thin-film solar cell |
| CN102893408A (en) * | 2010-05-13 | 2013-01-23 | 第一太阳能有限公司 | Photovotaic device conducting layer |
| US20140000690A1 (en) * | 2011-03-15 | 2014-01-02 | Victor V. Plotnikov | Intrinsically Semitransparent Solar Cell and Method of Making Same |
| CN102254966A (en) * | 2011-06-23 | 2011-11-23 | 上海太阳能电池研究与发展中心 | CdZnTe (cadmium zinc telluride) thin film solar cell with gradient band gap structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789455A (en) * | 2016-03-24 | 2016-07-20 | 浙江零维光伏科技有限公司 | Element doping method for organic thin film solar cell |
| CN109545881A (en) * | 2018-10-29 | 2019-03-29 | 四川大学 | A kind of CdS/CdTe solar cell of based single crystal silicon chip substrate |
| CN110544729A (en) * | 2019-08-09 | 2019-12-06 | 中山瑞科新能源有限公司 | CdTe double-sided solar cell and preparation method thereof |
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