CN102254966A - CdZnTe (cadmium zinc telluride) thin film solar cell with gradient band gap structure - Google Patents
CdZnTe (cadmium zinc telluride) thin film solar cell with gradient band gap structure Download PDFInfo
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- CN102254966A CN102254966A CN2011101738620A CN201110173862A CN102254966A CN 102254966 A CN102254966 A CN 102254966A CN 2011101738620 A CN2011101738620 A CN 2011101738620A CN 201110173862 A CN201110173862 A CN 201110173862A CN 102254966 A CN102254966 A CN 102254966A
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Abstract
The invention discloses a CdZnTe (cadmium zinc telluride) thin film solar cell with a gradient band gap structure, comprising a glass substrate, wherein a front electrode layer of transparent conducting oxides, an n-type CdS (cadmium sulfide) window layer, a p-type Cd1-xZnxTe absorption layer and a back electrode layer are deposited on the glass substrate in sequence; the p-type Cd1-xZnxTe absorption layer comprises three areas; the band gap in an intermediate area is not changed and mainly used for strengthening the absorption of sun peak spectrums; and the two areas at two sides are of a gradient band gap structure and used for broadening the absorption range of the solar spectrums. The structure is used to reduce the back surface recombination rate of a cell carrier, improve the ohmic contact of a back electrode of the cell and increase the open-circuit voltage and the short-circuit current of the cell, thus improving the performances of the cell.
Description
Technical field
The present invention relates to thin-film solar cells, be meant a kind of tellurium zinc cadmium (Cd especially with graded bandgap structure
1-xZn
xTe) thin-film solar cells.
Background technology
Solar cell is the device that luminous energy is directly changed into electric energy, if seek out high conversion efficiency, should take into full account the coupling of battery light absorption and solar spectrum, and the energy gap of absorbing material is best about 1.45eV under the general condition.The energy gap of CdTe is 1.45eV, and is direct transition section bar material, and absorption coefficient sharply increases near energy gap, and thickness is the film of 1um, is enough to absorb more than 99% of emittance greater than CdTe forbidden band energy, thus CdTe can do very thin.Yet,, become the key technical problem that this class battery of development is badly in need of solution owing to be difficult to form good Ohmic contact between P type CdTe and the back electrode.
1993, people such as Doty grew high-quality Cd for the first time
1-xZn
xThe Te crystal.Because of Cd
1-xZn
xThe energy gap of Te crystal can change with component x, good mechanical strength, high resistivity, good light sensitive characteristic and charge transmission etc. are used widely.Portion C d with in the Zn replacement zincblende lattce structure CdTe lattice forms ternary compound Cd
1-xZn
xTe, the crystal structure of not appreciable impact of the adding material of Zn.Cd
1-xZn
xTe can be counted as the solid solution of two kinds of binary compound ZnTe and CdTe, changes Cd
1-xZn
xThe content of Zn among the Te, i.e. x value, some important physical propertys can change in the scope of anticipation.Lattice constant as it sexually revises in 0.61004～0.64829nm top-stitching with the x value; Its energy gap with the x value at 1.45eV to adjustable continuously between 2.26eV.If at deposition ternary alloy three-partalloy Cd
1-xZn
xIn the Te process, rationally control of the variation of x value, the Cd that preparation has graded bandgap structure with film thickness
1-xZn
xThe Te polycrystal film and with it as light absorbing material, just might produce the solar cell of high electricity conversion.
The Cd that Chinese patent CN 101276854A proposes
1-xZn
xThe Te film is a graded bandgap structure, this band gap structure triangular in shape, though this graded bandgap structure can be used for widening the response wave band of solar cell, solve ohmic contact problem with dorsum electrode layer, but owing to the best energy gap near the solar radiation spectrum peak is 1.45eV, the energy gap of this triangular structure can not fully absorb the sunlight in the solar radiation spectrum peak scope, thereby can reduce the short circuit current of battery.
Summary of the invention
The objective of the invention is to propose a kind of graded bandgap structure that has, can fully absorb the Cd of sun peak value spectrum
1-xZn
xThe Te thin-film solar cells.
Thin-film solar cells with graded bandgap structure of the present invention comprises: glass substrate deposits electrode layer before the transparent conductive oxide, n type CdS Window layer, p type Cd successively on glass substrate
1-xZn
xTe absorbed layer, dorsum electrode layer.
Said p type Cd
1-xZn
xThe Te absorbed layer is a first area Cd who deposits successively on n type CdS Window layer
1-xZn
xTe absorbed layer, second area Cd
1-xZn
xTe absorbed layer and the 3rd zone C d
1-xZn
xThe Te absorbed layer.
Said first area Cd
1-xZn
xThe Te absorbed layer is a graded bandgap structure, and by 1 linear gradient to 0, the thickness of this absorbed layer is the 500-1800 nanometer to its component x value from the CdS Window layer along thickness direction.The Cd that this is regional
1-xZn
xThe energy gap of Te polycrystal film slowly is gradient to 1.45eV from 2.26eV, expanded the absorption region of solar spectrum greatly, and help to strengthen photo-generated carrier and separate and the internal electric field of collecting having produced one, and then improve the open circuit voltage of battery with the boundary of CdS Window layer contact.
Said second area Cd
1-xZn
xThe component x of Te absorbed layer equals 0, that is to say that second area is the CdTe thin layer, and thickness is the 100-500 nanometer.CdTe is II-VI compounds of group, is the direct band gap material, and its band gap is 1.45eV, and its spectral response and solar spectrum are very identical, and its stable performance, and the absorption coefficient of light is very big.This CdTe thin layer is mainly used in the absorption of enhancing to the sunlight in the solar spectrum peak value scope, improves the short circuit current of battery.
Said the 3rd zone C d
1-xZn
xThe Te absorbed layer is a graded bandgap structure, and by 0 linear gradient to 1, the thickness of this absorbed layer is the 5-100 nanometer to its component x value from CdTe thin layer upper edge thickness direction.The band gap of this zone absorbed layer changes and increases gradually with the x value, causes the quasi-electric field on a direction sensing back of the body surface in the zone, and this electric field can stop electronics surperficial near the back of the body, thereby reduces the back of the body recombination-rate surface of charge carrier.
The advantage of structure of the present invention is: when expanding the solar spectrum absorption region greatly, fully strengthened absorption to sunlight in the solar spectrum peak value scope, improve the open circuit voltage and the short circuit current of battery, thereby significantly improved Solar cell performance.
Description of drawings
Fig. 1 is the Cd with graded bandgap structure of the present invention
1-xZn
xThe cross-sectional view of Te thin-film solar cells.
Fig. 2 is the Cd with graded bandgap structure of the present invention
1-xZn
xThe bandgap structure schematic diagram of Te absorbing layer of thin film solar cell.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is further described.
See Fig. 1, have the Cd of graded bandgap structure
1-xZn
xThe Te thin-film solar cells comprises glass substrate 1, electrode layer 2, n type CdS Window layer 3, p type Cd before the transparent conductive oxide that deposits successively on glass substrate 1
1-xZn
xTe absorbed layer 4, dorsum electrode layer 5.
Thermal evaporation thickness is electrode layer 2 before ITO, SnO2:F, any transparent conductive oxide among the ZnO:Al of 200～800 nanometers on glass substrate 1.
Magnetron sputtering thickness is the n type CdS Window layer 3 of 50～100 nanometers on preceding electrode layer 2.
P type Cd
1-xZn
xThree zones of Te absorbed layer 4 adopt two target position cosputtering methods to deposit successively on n type CdS Window layer 3, and a target position is ZnTe, and another target position is CdTe, changes the x value of Zn by the sputtering power that changes two targets.Deposit first area Cd earlier
1-xZn
xTe absorbed layer 4-1, thickness are in the 500-1800 nanometer, and component x is from 1 linear gradient to 0; Adopt single target position sputtering method at first area Cd then
1-xZn
xIt is the second area Cd of 100-500 nanometer that Te absorbed layer 4-1 goes up deposit thickness
1-xZn
xTe absorbed layer 4-2, the component x of this absorbed layer is 0, that is to say that this absorbed layer is the CdTe thin layer; Then adopting two target position cosputtering method deposit thickness on the CdTe thin layer again is the three zone C d of the component x of 5-100 nanometer from 0 linear gradient to 1
1-xZn
xTe absorbed layer 4-3.
The p type Cd for preparing
1-xZn
xTe absorbed layer 4 is placed on and is coated with CdCl
2And ZnCl
2In the graphite boat of stratum granulosum, put into tube furnace and anneal.Annealing temperature is at 400-520 ℃, annealing time 20-40 minute.
After the annealing, use thermal evaporation method at Cd
1-xZn
xDeposit the Cu of 3-4 nanometer and the Au dorsum electrode layer 5 of 20-30 nanometer on the Te absorbed layer 4 successively, just can prepare the Cd with graded bandgap structure of high-photoelectric transformation efficiency
1-xZn
xThe Te thin-film solar cells.
Claims (1)
1. the tellurium zincium vestalium thin-film solar cell with graded bandgap structure comprises glass substrate (1), on glass substrate (1), deposit transparent conductive oxide successively before electrode layer (2), n type CdS Window layer (3), p type Cd
1-xZn
xTe absorbed layer (4), dorsum electrode layer (5) is characterized in that:
Said p type Cd
1-xZn
xTe absorbed layer (4) is a first area Cd who is arranged in order on n type CdS Window layer
1-xZn
xTe absorbed layer (4-1), second area Cd
1-xZn
xTe absorbed layer (4-2), the 3rd zone C d
1-xZn
xTe absorbed layer (4-3);
Said first area Cd
1-xZn
xTe absorbed layer (4-1) is a graded bandgap structure, and by 1 linear gradient to 0, the thickness of this absorbed layer is the 500-1800 nanometer to its component x value from CdS Window layer upper edge thickness direction;
Said second area Cd
1-xZn
xThe component x of Te absorbed layer (4-2) equals 0, that is to say that second area is the CdTe thin layer, and thickness is the 100-500 nanometer;
Said the 3rd zone C d
1-xZn
xTe absorbed layer (4-3) is a graded bandgap structure, and by 0 linear gradient to 1, the thickness of this absorbed layer is the 5-100 nanometer to its component x value from CdTe thin layer upper edge thickness direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101738620A CN102254966A (en) | 2011-06-23 | 2011-06-23 | CdZnTe (cadmium zinc telluride) thin film solar cell with gradient band gap structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101738620A CN102254966A (en) | 2011-06-23 | 2011-06-23 | CdZnTe (cadmium zinc telluride) thin film solar cell with gradient band gap structure |
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|---|---|
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|---|---|---|---|
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|---|---|
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102492927A (en) * | 2011-12-08 | 2012-06-13 | 上海太阳能电池研究与发展中心 | Method for preparing tellurium-zinc-cadmium film material with adjustable forbidden bandwidth |
| CN102820347A (en) * | 2012-08-09 | 2012-12-12 | 深圳先进技术研究院 | Copper, zinc, tin, germanium and selenium thin film and preparation method thereof and copper, zinc, tin, germanium and selenium thin-film solar cell |
| CN104810424A (en) * | 2015-04-17 | 2015-07-29 | 四川大学 | CdTe thin film solar battery with CdxTe insertion layer |
| CN104851931A (en) * | 2015-04-14 | 2015-08-19 | 湖南共创光伏科技有限公司 | Cadmium telluride thin-film solar cell with gradient structure and manufacture method thereof |
| CN104882543A (en) * | 2015-05-21 | 2015-09-02 | 北京交通大学 | Organic-inorganic hybrid perovskite MAPbBr3 material with gradient energy band structure and preparation method thereof |
| CN105161561A (en) * | 2015-07-13 | 2015-12-16 | 四川大学 | Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell |
| CN105428448A (en) * | 2015-09-29 | 2016-03-23 | 北京大学 | Solar cell in bi-component gradual change structure, and preparation method for solar cell |
| CN105556682A (en) * | 2013-06-21 | 2016-05-04 | 第一阳光公司 | Photovoltaic devices |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5742089A (en) * | 1995-06-07 | 1998-04-21 | Hughes Electronics | Growth of low dislocation density HGCDTE detector structures |
| US20070215195A1 (en) * | 2006-03-18 | 2007-09-20 | Benyamin Buller | Elongated photovoltaic cells in tubular casings |
| CN101276854A (en) * | 2008-05-09 | 2008-10-01 | 上海太阳能电池研究与发展中心 | Tellurium zincium vestalium thin-film solar cell |
-
2011
- 2011-06-23 CN CN2011101738620A patent/CN102254966A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5742089A (en) * | 1995-06-07 | 1998-04-21 | Hughes Electronics | Growth of low dislocation density HGCDTE detector structures |
| US20070215195A1 (en) * | 2006-03-18 | 2007-09-20 | Benyamin Buller | Elongated photovoltaic cells in tubular casings |
| CN101276854A (en) * | 2008-05-09 | 2008-10-01 | 上海太阳能电池研究与发展中心 | Tellurium zincium vestalium thin-film solar cell |
Non-Patent Citations (1)
| Title |
|---|
| 夏庚培等: "CdTe多晶薄膜太阳电池的结构改进", 《太阳能学报》, vol. 26, no. 3, 30 June 2005 (2005-06-30) * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102492927A (en) * | 2011-12-08 | 2012-06-13 | 上海太阳能电池研究与发展中心 | Method for preparing tellurium-zinc-cadmium film material with adjustable forbidden bandwidth |
| CN102492927B (en) * | 2011-12-08 | 2013-11-20 | 上海太阳能电池研究与发展中心 | Method for preparing tellurium-zinc-cadmium film material with adjustable forbidden bandwidth |
| CN102820347A (en) * | 2012-08-09 | 2012-12-12 | 深圳先进技术研究院 | Copper, zinc, tin, germanium and selenium thin film and preparation method thereof and copper, zinc, tin, germanium and selenium thin-film solar cell |
| CN105556682A (en) * | 2013-06-21 | 2016-05-04 | 第一阳光公司 | Photovoltaic devices |
| US9871154B2 (en) | 2013-06-21 | 2018-01-16 | First Solar, Inc. | Photovoltaic devices |
| CN104851931A (en) * | 2015-04-14 | 2015-08-19 | 湖南共创光伏科技有限公司 | Cadmium telluride thin-film solar cell with gradient structure and manufacture method thereof |
| CN104810424A (en) * | 2015-04-17 | 2015-07-29 | 四川大学 | CdTe thin film solar battery with CdxTe insertion layer |
| CN104882543A (en) * | 2015-05-21 | 2015-09-02 | 北京交通大学 | Organic-inorganic hybrid perovskite MAPbBr3 material with gradient energy band structure and preparation method thereof |
| CN104882543B (en) * | 2015-05-21 | 2017-05-03 | 北京交通大学 | Organic-inorganic hybrid perovskite MAPbBr3 material with gradient energy band structure and preparation method thereof |
| CN105161561A (en) * | 2015-07-13 | 2015-12-16 | 四川大学 | Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell |
| CN105428448A (en) * | 2015-09-29 | 2016-03-23 | 北京大学 | Solar cell in bi-component gradual change structure, and preparation method for solar cell |
| CN105428448B (en) * | 2015-09-29 | 2018-06-08 | 北京大学 | A kind of bi-component grading structure solar cell and preparation method thereof |
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Application publication date: 20111123 |