CN104810424A - CdTe thin film solar battery with CdxTe insertion layer - Google Patents
CdTe thin film solar battery with CdxTe insertion layer Download PDFInfo
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- CN104810424A CN104810424A CN201510183116.8A CN201510183116A CN104810424A CN 104810424 A CN104810424 A CN 104810424A CN 201510183116 A CN201510183116 A CN 201510183116A CN 104810424 A CN104810424 A CN 104810424A
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- cdte
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 81
- 239000010409 thin film Substances 0.000 title claims abstract description 51
- 230000037431 insertion Effects 0.000 title 1
- 238000003780 insertion Methods 0.000 title 1
- 239000010408 film Substances 0.000 claims abstract description 58
- 230000008859 change Effects 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000004044 response Effects 0.000 abstract description 5
- 238000002329 infrared spectrum Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 229910002056 binary alloy Inorganic materials 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Power Engineering (AREA)
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Abstract
The invention belongs to the field of new energy materials and devices, and particularly relates to a CdTe thin film solar battery with a CdTe thin film as an auxiliary absorption layer to widen infrared spectrum response. A layer of band gap adjustable CdxTe binary system film material is inserted in the CdTe thin film battery structure. As the band gap can change between 0.33eV and 1.44eV, infrared incapable of being absorbed by CdTe film with the wavelength larger than 860nm can be absorbed, photoproduction carriers of the battery are increased, and photoproduction current is improved. The CdxTe film can be introduced between a Cds thin film and a CdTe thin film, can be introduced between the CdTe film and a back contact layer and can further be introduced in the CdTe thin film. The infrared spectrum response of the CdTe thin film solar battery with the CdTe absorption layer can be widened from 860nm to over 3000nm.
Description
Technical field
Field belonging to this invention is new energy materials and devices field, particularly a kind of can widen infrared spectrum response and improve junction characteristic, containing Cd
xthe CdTe thin film solar cell of Te film.
Background technology
At present, solar photovoltaic generating is as the renewable energy utilization form of clean and effective, and its core missions are still reduce cost of electricity-generating to make it suitable with conventional electric power generation cost, and then progressively substitute existing conventional power generation usage technology.Photovoltaic generation cost reduces to be depended on development high-efficiency and low-cost solar cell manufacturing technology and develops the relevant inversion of high-efficiency solar photovoltaic plant, interconnection technology.Although present stage, crystal-silicon solar cell occupied the market share of more than 80%, thin film solar cell energy consumption is low, the energy regenerating cycle is short, high, the easy realization of electricity and building is integrated and can flexibility and the advantage of wide application is fairly obvious under the low light level.
In thin film solar cell, the advantage of cadmium telluride film solar cells is remarkable especially.Through the development of more than two decades, small-area devices and large area Module Manufacture Technology have made great progress.First Solar company of the U.S. creates the record of small-area devices conversion efficiency 20.4%, but also differs far away apart from its theoretical conversion efficiencies 28%.The basic structure of cadmium telluride film solar cells is: n-CdS is as Window layer, and p-CdTe is as absorbed layer, and they form a n-p heterojunction; Metal electrode at the back side of p-CdTe layer, i.e. back electrode.At present, cadmium telluride film solar cells efficiency is lower two major reasons: one be cadmium telluride film solar cells absorbed layer---the energy gap of Cadimium telluride thin film is about 1.44eV, this makes photon energy in solar spectrum be longer than 860nm lower than 1.44eV(and wavelength) those infrared lights can not be absorbed by cadmium telluride, and photo-generated carrier can not be excited to form photogenerated current, result does not respond near infrared light; Need the semiconductor introducing narrow band gap as absorbed layer, to expanding its long-wave response for this reason.Two is that the cadmium telluride being difficult to seek the sufficiently high metal of a kind of work function and the doping of high p-type forms good ohmic contact, need the back contact making a highly doped or narrow band gap between p-type cadmium telluride and back electrode for this reason, to obtaining better junction characteristic, i.e. better rectification characteristic.For a long time, numerous researchers makes great efforts to make a breakthrough in above-mentioned two.
Summary of the invention
The object of the invention is to propose the method expanded long-wave response and contact with in back electrode acquisition good ohmic.The basic thought of the method is in CdTe film battery, prepare the adjustable Cd of band gap
xte binary system film insert layer, it both can be used as a part for absorbed layer, and absorbing wavelength is greater than the infrared light of 860nm, increased the photo-generated carrier of battery and improved photogenerated current, also when its band gap is narrower as good back contact, cell integrated junction characteristic can be improved.
Cd
xte film is a kind of binary compound departing from stoicheiometry, and identical with the element kind of CdTe thin film.The energy gap of Te is narrower, is about 0.33eV, and the more about 1.44eV of the energy gap of CdTe.Our research shows, modulation Cd
xthe stoicheiometry of Te film, makes x change between 0 to 1, can make Cd
xthe energy gap of Te film changes between 0.33 ~ 1.44eV.Our research also shows, in cadmium telluride film solar cells, introduces the Cd of different chemical proportioning in different positions
xte film, can play different effects.
For realizing the object of the invention, the technical scheme that the present invention is made up of following measures realizes.(1) at TCO/CdS substrate (wherein, TCO is transparent conductive oxide film) upper deposition one deck Cd
xte film, select x between 0.1 ~ 0.95, thickness range is 50nm ~ 1000nm, and then deposits CdTe thin film, finally deposits back contact and electrode, forms complete TCO/CdS/Cd
xthe cadmium telluride film solar cells of Te/CdTe/ back contact/metal structure, as Fig. 1.(2) or, also can above-mentioned Cd
xte thin film deposition between CdTe thin film and back contact, then deposits back electrode and finally forms TCO/CdS/CdTe/Cd later
xthe cadmium telluride film solar cells of Te/ back contact/metal structure, as Fig. 2.(3) or, TCO/CdS/CdTe substrate deposits one deck Cd
xte film, select x between 0 ~ 0.3, thickness is 20nm ~ 100nm, and then plated metal back electrode, and finally forms complete TCO/CdS/CdTe/Cd
xthe cadmium telluride film solar cells of Te/ metal structure, Cd here
xte is back contact, as Fig. 3.(4) or, TCO/CdS substrate first deposits certain thickness CdTe thin film, then deposits Cd
xte film, then continues deposition CdTe thin film, finally deposits back contact and electrode, form complete TCO/CdS/CdTe/Cd
xthe cadmium telluride film solar cells of Te/CdTe/ back contact/metal structure, as Fig. 4.(5) or, TCO/CdS substrate deposits the Cd that x gradually changes, energy gap width also gradually changes
xte transition zone, the x of transition zone gradually changes between 0.1 ~ 0.95, and its thickness range between 100nm ~ 2000nm, and then deposits CdTe thin film, finally deposits back contact and electrode, forms complete TCO/CdS/ graded bandgap Cd
xthe cadmium telluride film solar cells of Te/CdTe/ back contact/metal structure, as Fig. 5.Certainly, in a few class application such as (1), (2), (4) (5), the Cd of x between 0 ~ 0.3 can also be re-used
xte film makes back contact.
Can prepare by methods such as vacuum evaporation, magnetron sputtering, close spaced sublimation, electro-deposition.Cd
xafter the preparation of Te layer, also can carry out annealing in process under certain atmosphere and temperature.
Accompanying drawing explanation
Fig. 1 is TCO/CdS/Cd
xthe cadmium telluride film solar cells of Te/CdTe/ back contact/metal structure.
Fig. 2 is TCO/CdS/CdTe/Cd
xthe cadmium telluride film solar cells of Te/ back contact/metal structure.
Fig. 3 is TCO/CdS/CdTe/Cd
xthe cadmium telluride film solar cells of Te/ metal structure.
Fig. 4 is TCO/CdS/CdTe/Cd
xthe cadmium telluride film solar cells of Te/CdTe/ back contact/metal structure.
Fig. 5 is TCO/CdS/ graded bandgap Cd
xthe cadmium telluride film solar cells of Te/CdTe/ back contact/metal structure.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described, but content of the present invention is not limited only to the content that relates in embodiment.
embodiment one:
There is Cd
xthe first CdTe thin film solar battery structure of Te absorbed layer as shown in Figure 1, Cd
xte absorbed layer is in the centre of CdS film and CdTe thin film.At SnO
2in the substrate of/CdS room temperature, first by coevaporation together with CdTe with Te to formation Cd
xte film, x is between 0 ~ 1, and thickness is 50nm ~ 200nm.By the Cd that evaporation obtains
xte film takes out, and 150 DEG C ~ 250 DEG C annealing in drying nitrogen, are incubated 10 minutes, then naturally cool to room temperature.By close spaced sublimation method at Cd
xte film prepares CdTe thin film, thickness 3 μm ~ 5 μm, then carry out annealing and surface treatment.By ZnTe and Cu coevaporation to substrate, form ZnTe:Cu back contact, thickness is 50nm ~ 100nm; Then 150 DEG C ~ 200 DEG C heat treatments are carried out at annealing furnace nitrogen atmosphere.Finally make back electrode with the gold-plated film 200nm of vacuum evaporation.Had thus
cd
xthe CdTe thin film solar cell of Te absorbed layer.
embodiment two:
There is Cd
xthe second CdTe thin film solar battery structure of Te film as shown in Figure 2, Cd
xte absorbed layer is between CdTe thin film and back contact.At SnO
2one deck CdTe thin film is first prepared in/CdS substrate, thickness 1 μm ~ 3 μm, then carry out annealing and surface treatment; One deck Cd is prepared by cosputtering method
xte film, x is between 0 ~ 1, and thickness is 200nm ~ 500nm.By Cd
xte film takes out, and 150 DEG C ~ 250 DEG C annealing in drying nitrogen, are incubated 10 minutes, then naturally cool to room temperature.At Cd
xte film continues plating one deck Cu film, thickness 50nm, then 170 DEG C of annealing, last gold-plated 200nm.Obtain having of another kind of structure thus
cd
xthe CdTe thin film solar cell of Te absorbed layer.
embodiment three:
There is Cd
xthe third CdTe thin film solar battery structure of Te film as shown in Figure 3, Cd
xte absorbed layer is between CdTe thin film and back electrode.At SnO
2one deck CdTe thin film is first prepared in/CdS substrate, thickness 1 μm ~ 3 μm, then carry out annealing and surface treatment; One deck Cd is prepared by cosputtering method
xte film, x is between 0 ~ 0.3, and thickness is 50nm ~ 200nm.By Cd
xte film takes out, and 150 DEG C ~ 250 DEG C annealing in drying nitrogen, are incubated 10 minutes, then naturally cool to room temperature.At Cd
xte film continues plating 200nm gold thin film and do back electrode.Had thus
cd
xthe third structure of CdTe thin film solar cell of Te absorbed layer.In such an embodiment, due to Cd
xthe x value of Te is smaller, and the conductivity of film is higher, so it can also make the back contact of CdTe battery except absorbing infrared light.
embodiment four:
There is Cd
x4th kind of CdTe thin film solar battery structure of Te film as shown in Figure 4, Cd
xte absorbed layer is between two-layer CdTe thin film.At SnO
2one deck CdTe thin film is first prepared in/CdS substrate, and thickness 1 μm ~ 2 μm, then prepares one deck Cd by coevaporation method
xte film, x is between 0 ~ 1, and thickness is 100nm ~ 300nm, finally deposits one deck CdTe thin film again, thickness 1 μm ~ 2 μm.CdTe thin film continues plating one deck Cu film, thickness 50nm, then 170 DEG C of annealing, last gold-plated 200nm.Had thus
cd
xcdTe thin film solar cell the 4th kind of structure of Te absorbed layer.
Claims (9)
1. one kind has Cd
xthe CdTe thin film solar cell of Te insert layer, is characterized in that having one of following five kinds of structures: (1) TCO/CdS/Cd
xte/CdTe/ back contact/metal; (2) TCO/CdS/CdTe/Cd
xte/ back contact/metal; (3) TCO/CdS/CdTe/Cd
xte/ metal; (4) TCO/CdS/CdTe/Cd
xte/CdTe/ back contact/metal; (5) TCO/CdS/ graded bandgap Cd
xte/CdTe/ back contact/metal.
2. structure as claimed in claim 1 is TCO/CdS/Cd
xthe CdTe thin film solar cell of Te/CdTe/ back contact/metal, is characterized in that first depositing one deck Cd on TCO/CdS substrate
xte film, then sequential aggradation CdTe thin film, back contact and metal electrode.
3. structure as claimed in claim 1 is TCO/CdS/CdTe/Cd
xthe CdTe thin film solar cell of Te/ back contact/metal, is characterized in that at TCO/CdS/CdTe deposited on substrates Cd
xte film, then sequential aggradation back contact and metal electrode.
4. structure as claimed in claim 1 is TCO/CdS/CdTe/Cd
xthe CdTe thin film solar cell of Te/ metal, is characterized in that at TCO/CdS/CdTe deposited on substrates one deck Cd
xte film (x is between 0 ~ 0.3), then deposit metal electrodes.
5. structure as claimed in claim 1 is TCO/CdS/CdTe/Cd
xthe CdTe thin film solar cell of Te/CdTe/ back contact/metal, is characterized in that first depositing one deck CdTe thin film on TCO/CdS substrate, then deposits one deck Cd
xte film, then sequential aggradation CdTe thin film, back contact and metal electrode.
6. structure as claimed in claim 1 is TCO/CdS/ gradual change Cd
xthe CdTe thin film solar cell of Te/CdTe/ back contact/metal, is characterized in that the Cd first depositing the gradual change of one deck x value on TCO/CdS substrate
xte film, then sequential aggradation CdTe thin film, back contact and metal electrode.
7. CdTe thin film solar battery structure as claimed in claim 1, is characterized in that Cd
xthe x of Te film changes between 0 ~ 0.95, and the band gap of respective films changes between 0.33eV ~ 1.44eV.
8. CdTe thin film solar battery structure as claimed in claim 1, is characterized in that Cd
xthe thickness of Te film is at 50nm ~ 2000nm.
9. CdTe thin film solar battery structure as claimed in claim 1, is characterized in that Cd
xthe heat-treat condition of Te film is drying nitrogen, 150 DEG C ~ 250 DEG C annealing, is incubated 10 ~ 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510183116.8A CN104810424A (en) | 2015-04-17 | 2015-04-17 | CdTe thin film solar battery with CdxTe insertion layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510183116.8A CN104810424A (en) | 2015-04-17 | 2015-04-17 | CdTe thin film solar battery with CdxTe insertion layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104810424A true CN104810424A (en) | 2015-07-29 |
Family
ID=53695099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510183116.8A Pending CN104810424A (en) | 2015-04-17 | 2015-04-17 | CdTe thin film solar battery with CdxTe insertion layer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107564977A (en) * | 2017-08-31 | 2018-01-09 | 成都中建材光电材料有限公司 | A kind of Window layer, CdTe thin film solar cell module and preparation method thereof |
| CN115377237A (en) * | 2022-08-30 | 2022-11-22 | 四川大学 | Aluminum antimonide thin film solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110139247A1 (en) * | 2009-12-16 | 2011-06-16 | Primestar Solar, Inc. | Graded alloy telluride layer in cadmium telluride thin film photovoltaic devices and methods of manufacturing the same |
| CN102254966A (en) * | 2011-06-23 | 2011-11-23 | 上海太阳能电池研究与发展中心 | CdZnTe (cadmium zinc telluride) thin film solar cell with gradient band gap structure |
| CN104851931A (en) * | 2015-04-14 | 2015-08-19 | 湖南共创光伏科技有限公司 | Cadmium telluride thin-film solar cell with gradient structure and manufacture method thereof |
| CN105144393A (en) * | 2012-12-13 | 2015-12-09 | 丹尼尔·斯科特·马沙尔 | Magnetically polarized photonic device |
-
2015
- 2015-04-17 CN CN201510183116.8A patent/CN104810424A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110139247A1 (en) * | 2009-12-16 | 2011-06-16 | Primestar Solar, Inc. | Graded alloy telluride layer in cadmium telluride thin film photovoltaic devices and methods of manufacturing the same |
| CN102254966A (en) * | 2011-06-23 | 2011-11-23 | 上海太阳能电池研究与发展中心 | CdZnTe (cadmium zinc telluride) thin film solar cell with gradient band gap structure |
| CN105144393A (en) * | 2012-12-13 | 2015-12-09 | 丹尼尔·斯科特·马沙尔 | Magnetically polarized photonic device |
| CN104851931A (en) * | 2015-04-14 | 2015-08-19 | 湖南共创光伏科技有限公司 | Cadmium telluride thin-film solar cell with gradient structure and manufacture method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107564977A (en) * | 2017-08-31 | 2018-01-09 | 成都中建材光电材料有限公司 | A kind of Window layer, CdTe thin film solar cell module and preparation method thereof |
| CN115377237A (en) * | 2022-08-30 | 2022-11-22 | 四川大学 | Aluminum antimonide thin film solar cell |
| CN115377237B (en) * | 2022-08-30 | 2024-01-30 | 四川大学 | Aluminum antimonide thin film solar cell |
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