CN112909101B - Solar cell and manufacturing method thereof - Google Patents
Solar cell and manufacturing method thereof Download PDFInfo
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- CN112909101B CN112909101B CN202110063565.4A CN202110063565A CN112909101B CN 112909101 B CN112909101 B CN 112909101B CN 202110063565 A CN202110063565 A CN 202110063565A CN 112909101 B CN112909101 B CN 112909101B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000001704 evaporation Methods 0.000 claims abstract description 18
- 230000008020 evaporation Effects 0.000 claims abstract description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 230000005641 tunneling Effects 0.000 claims description 9
- 238000005192 partition Methods 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 230000006911 nucleation Effects 0.000 claims description 7
- 238000010899 nucleation Methods 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000005520 cutting process Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000001883 metal evaporation Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000589 SAE 304 stainless steel Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
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- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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Abstract
The invention provides a solar cell and a manufacturing method thereof. A solar cell includes a Ge substrate; the patterned back electrode is arranged on the surface of the Ge substrate and comprises a first metal layer with consistent thickness and a latticed second metal layer; the epitaxial layer is arranged on the surface of one side, away from the graphical back electrode, of the Ge substrate; a negative electrode disposed on the surface of the epitaxial layer; and an anti-reflection film completely covering the negative electrode. The patterned back electrode is prepared by adopting a one-time evaporation method, and compared with a photoetching technology and a secondary evaporation technology, the preparation cost is reduced; compared with the unpatterned back electrode, the warping degree of the battery before and after cutting is reduced.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a solar cell and a manufacturing method thereof.
Background
The gallium arsenide solar cell is used as a third-generation solar cell, has the advantages of high conversion efficiency, good temperature characteristic, strong irradiation resistance, light weight and the like compared with a silicon solar cell, and is widely applied to a ground concentrating photovoltaic system and a space power supply system at present. Since the 50 s of the last century, gaas solar cells have undergone the development from single junction to multi-junction, with increasing efficiency. Wherein the theoretical efficiency of the single-junction gallium arsenide solar cell reaches 30%, and the theoretical efficiency of the multi-junction gallium arsenide solar cell is more than 50%; in addition, the laboratory efficiency of multijunction gallium arsenide solar cells has reached 50% (from IBM corporation data), and the industrial production conversion rate can reach over 30%.
However, gallium arsenide is brittle in texture compared to silicon and is easily broken during processing. Therefore, gallium arsenide solar cells are often made into thin films by industry and metal germanium is used as a substrate to counter the disadvantage of being brittle and breakable.
However, after the back metal layer with the consistent thickness is evaporated on the back surface of the germanium substrate, the semi-finished gallium arsenide solar cell is easy to warp, and is not beneficial to processes such as subsequent negative electrode manufacturing; the finished gallium arsenide solar cell produced has the warping degree which does not meet the process requirements and is not beneficial to the subsequent cell packaging.
Disclosure of Invention
The present invention is directed to solving at least one of the above problems in the prior art. To this end, the present invention provides a solar cell.
The invention also provides a manufacturing method of the solar cell.
A solar cell includes
A Ge substrate 1;
the patterned back electrode is arranged on the surface of one side of the Ge substrate 1;
the epitaxial layer 2 is arranged on the surface of one side, away from the patterned back electrode, of the Ge substrate 1;
a negative electrode 9 arranged on the surface of the epitaxial layer 2;
and the anti-reflection film 10 covers the surface of the negative electrode 9.
According to some embodiments of the present invention, the Ge substrate 1 is a P-type Ge single crystal.
According to some embodiments of the present invention, the Ge substrate 1 has a thickness of 130 μm to 200 μm.
According to some embodiments of the present invention, the patterned back electrode includes a first metal layer 7 with a uniform thickness disposed on the surface of the Ge substrate 1, and a second metal layer 8 disposed on the surface of the first metal layer 7 in a grid shape.
According to some embodiments of the present invention, the first metal layer 7 has a thickness of 10nm to 500 nm.
According to some embodiments of the present invention, the material of the first metal layer 7 is at least one of gold, palladium, platinum, and titanium.
According to some embodiments of the present invention, the second metal layer 8 has a thickness of 1000nm to 7000 nm.
According to some embodiments of the present invention, the second metal layer 8 is made of at least one of gold, palladium, platinum, titanium, and silver.
According to some embodiments of the present invention, the epitaxial layer 2 includes a nucleation layer 201, a buffer layer 202, a middle-bottom cell tunnel junction 203, a middle cell 204, a middle-top cell tunnel junction 205, a top cell 206, a window layer 207, and a cap layer 208, which are sequentially grown along a surface of the Ge substrate 1 on a side away from the patterned back electrode.
According to some embodiments of the present invention, the nucleation layer 201 is N-type GaInP.
According to some embodiments of the present invention, the nucleation layer 201 has a thickness of 10nm to 50 nm.
According to some embodiments of the present invention, the buffer layer 202 is N-type GaInAs.
According to some embodiments of the present invention, the buffer layer 202 has a thickness of 500nm to 2000 nm.
According to some embodiments of the invention, the midsole cell tunnel junction 203 has a thickness of 10nm to 30 nm.
According to some embodiments of the present invention, the middle battery 204 is made of GaInAs.
According to some embodiments of the invention, the middle cell 204 has a thickness of 1000nm to 2500 nm.
According to some embodiments of the present invention, the middle top cell tunneling junction 205 has a thickness of 10nm to 30 nm.
According to some embodiments of the present invention, the top cell 206 is GaInP.
According to some embodiments of the present invention, the top cell 206 has a thickness of 800nm to 1500 nm.
According to some embodiments of the present invention, the window layer 207 is N-type AlInP.
According to some embodiments of the invention, the window layer 207 has a thickness of 20nm to 100 nm.
According to some embodiments of the present invention, the cap layer 208 is N-type GaInAs.
According to some embodiments of the present invention, the cap layer 208 has a thickness of 200nm to 1000 nm.
According to some embodiments of the present invention, the negative electrode 9 is at least one of AuGeNi alloy, gold, silver, palladium, titanium, chromium, and aluminum.
According to some embodiments of the invention, the negative electrode 9 has a thickness of 2 μm to 10 μm.
According to some embodiments of the present invention, the anti-reflection film 10 is made of TiO2、Al2O3、SiO2One or more of (a).
A manufacturing method of a solar cell comprises the following steps:
s1, growing the epitaxial layer 2 on the surface of the Ge substrate 1;
s2, evaporating and plating the first metal layer 7 on the surface of one side, away from the epitaxial layer, of the Ge substrate 1;
s3, evaporating and depositing the latticed second metal layer 8 on the surface of the first metal layer 7;
s4, manufacturing the negative electrode 9 on the surface of the epitaxial layer 2;
and S5, manufacturing the anti-reflection film 10 on the surface of the negative electrode 9.
According to some embodiments of the present invention, step S1 includes growing the nucleation layer 201, the buffer layer 202, the middle-bottom cell tunnel junction 203, the middle cell 204, the middle-top cell tunnel junction 205, the top cell 206, the window layer 207, and the cap layer 208 on the surface of the Ge substrate 1 in sequence to form the epitaxial layer 2.
According to some embodiments of the present invention, in step S3, the method for disposing the grid-shaped second metal layer 8 is: during the evaporation process, a mesh-shaped partition plate 4 is arranged between the first metal layer 7 and the evaporation machine.
According to one embodiment of the present invention, the mesh-like separator 4 is made of 304 stainless steel strips having a cross section of a square shape with a side length of 1 mm.
According to one embodiment of the present invention, the mesh-like separator 4 has a square shape with a mesh size of 0.5cm × 0.5 cm.
According to one embodiment of the invention, the mesh-like spacer 4 is connected to one end of a metal rod 5.
According to one embodiment of the invention, the other end of the metal rod 5 is connected to a cylinder 6.
According to an embodiment of the invention, during the evaporation process, the opening and closing of the cylinder 6 can be controlled by controlling the opening and closing of the electromagnetic valve in the cylinder through a PLC signal, so that the metal rod 5 is driven, the position of the mesh-shaped partition plate 4 is controlled, and the arrangement of the mesh-shaped second metal layer is realized.
According to one embodiment of the invention, when the first metal layer 7 is evaporated, the mesh partition plate 4 is closed without blocking the metal vapor; when the second metal layer 8 is evaporated, the mesh partition plate 4 is opened to shield the Ge substrate 1, so as to form a mesh second metal layer 8.
According to one embodiment of the present invention, the vapor deposition of the first metal layer 7 and the second metal layer 8 is performed by a continuous single vapor deposition, and is performed only by starting and stopping the mesh-like separator 4 during the vapor deposition.
According to some embodiments of the present invention, in step S4, the method for manufacturing the negative electrode 9 includes: the region other than the negative electrode 9 is protected by photolithography, the negative electrode 9 is formed by metal evaporation, and finally the photoresist is removed.
According to some embodiments of the present invention, the method further comprises etching away the cap layer 208 outside the negative electrode 9 region before step S5.
According to some embodiments of the invention, the etching, being selective etching, is in a range of: a cap layer except for the region where the negative electrode 9 is provided until the window layer 207 is exposed; the negative electrode 9 and the metal grid line are used as masks to protect the negative electrode 9 from corrosion.
According to some embodiments of the invention, the etching, etching agent is an aqueous solution of sodium citrate.
According to some embodiments of the present invention, in step S5, the antireflection film 10 is formed by protecting the bonding area of the negative electrode 9 by photolithography, evaporating the antireflection film 10 in the remaining area, and then removing the photoresist.
Compared with the prior art, the invention has at least the following beneficial effects.
(1) Compared with the photoetching technology, the patterned back electrode is prepared by adopting a one-time evaporation method, the operations of gluing, removing glue and the like are not needed, the photoresist is not used, and the manufacturing cost is reduced.
(2) The patterned back electrode is prepared by adopting a one-time evaporation method, and compared with the patterned back electrode formed by adopting a two-time evaporation method, the processing time is reduced, so that the manufacturing cost is reduced.
(3) Compared with the non-patterned back electrode before the battery is cut, the patterned back electrode is arranged, so that the metal stress of the back electrode is released, and the warping degree of a wafer is reduced from 0.2mm to 0.1 mm.
(4) After the battery is cut, compared with the non-patterned back electrode, the patterned back electrode is arranged, so that the metal stress of the back electrode is released, the warping degree of the finished battery is reduced from 0.2mm to 0.1mm, and the packaging is facilitated.
Drawings
Fig. 1 is a schematic structural view of a mesh separator and its accompanying structures.
Fig. 2 is a schematic view of the epitaxial layer structure in step S1 of example 1.
FIG. 3 is a schematic structural view of a material obtained in step S3 of example 1.
FIG. 4 is a schematic structural view of a material obtained in step S4 of example 1.
FIG. 5 is a schematic structural view of a material obtained in step S5 of example 1.
Fig. 6 is a schematic structural view of a solar cell obtained in the example.
Description of the figure numbers:
1. a Ge substrate; 2. an epitaxial layer; 3. a plating pot wafer clamping ring of the metal evaporation machine platform; 4. a mesh-like separator; 5. a metal rod; 6. a cylinder; 7. a first metal layer; 8. a second metal layer; 9; a negative electrode; 10. a antireflection film; 201. a nucleation layer; 202. a buffer layer; 203. a middle-bottom battery tunneling junction; 204. a middle battery; 205. a middle top cell tunneling junction; 206. a top battery; 207. a window layer; 208. and a cap layer.
Detailed Description
The following are specific examples of the present invention, and the technical solutions of the present invention will be further described with reference to the examples, but the present invention is not limited to the examples.
Example 1
The embodiment of the invention provides a solar cell, and a specific manufacturing method of the solar cell comprises the following steps:
s1, growing an epitaxial layer 2 on a P-type Ge substrate 1 with the thickness of 145 mu m: growing an N-type GaInP nucleating layer 201 with the thickness of 15nm, an N-type GaInAs buffer layer 202 with the thickness of 1100nm, a middle-bottom battery tunneling junction 203 with the thickness of 20nm, a GaInAs middle battery 204 with the thickness of 1900nm, a middle-top battery tunneling junction 205 with the thickness of 20nm, a GaInP top battery 206 with the thickness of 900nm, an N-type AlInP window layer 207 with the thickness of 60nm and an N-type GaInAs cap layer 208 with the thickness of 550nm in sequence;
s2, evaporating a first metal layer 7 which is made of gold and has the thickness of 80nm to the surface of one side, away from the epitaxial layer 2, of the P-type Ge substrate 1 in a state that the net-shaped partition plate 4 is not shielded;
s3, under the state that the net-shaped partition plate 4 is used for shielding, a second metal layer 8 which is made of silver and gold and is in a net shape and is 3000nm thick is evaporated on the surface of the first metal layer 7;
s4, protecting the region outside the negative electrode 9 by adopting photoetching, evaporating the negative electrode 9 which is made of AuGeNi alloy and Ag and has the thickness of 5 mu m on the surface of the epitaxial layer 2 of the material obtained in the step S3, and then removing the photoresist;
s5, the electrode and the metal grid line are used as masks to protect the negative electrode 9, and the cap layer 208 outside the negative electrode 9 is corroded by citric acid solution until the window layer 207 is exposed;
s6, protecting the welding area of the negative electrode by adopting photoetching, and evaporating an anti-reflection film 10 made of TiO2/Al2O3 on the surface of the negative electrode 9.
In this embodiment, a schematic view of the mesh partition, its attached structure and its installation position is shown in fig. 1; in step S1, a schematic structural diagram of the epitaxial layer is shown in fig. 2; a schematic diagram of the material obtained in step S3 is shown in fig. 3; a schematic diagram of the material obtained in step S4 is shown in fig. 4; a schematic diagram of the material obtained in step S5 is shown in fig. 5; a schematic diagram of the solar cell obtained in this example is shown in fig. 6.
The present invention has been described in detail with reference to the embodiments, but the present invention is not limited to the embodiments described above, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention.
Claims (8)
1. A solar cell, comprising
A Ge substrate (1);
the patterned back electrode is arranged on the surface of one side of the Ge substrate (1);
the epitaxial layer (2) is arranged on the surface of one side, away from the patterned back electrode, of the Ge substrate (1);
a negative electrode (9) arranged on the surface of the epitaxial layer (2);
the anti-reflection film (10) covers the surface of the negative electrode (9);
the patterned back electrode comprises a first metal layer (7) which is arranged on the surface of the Ge substrate (1) and has consistent thickness, and a latticed second metal layer (8) arranged on the surface of the first metal layer (7);
the setting method of the second metal layer (8) comprises the following steps: in the evaporation process, a reticular clapboard (4) is arranged between the first metal layer (7) and the evaporation machine;
the net-shaped partition plate is connected with one end of the metal rod (5), and the other end of the metal rod (5) is connected with the air cylinder (6).
2. The solar cell according to claim 1, wherein the first metal layer (7) has a thickness of 10nm to 500 nm.
3. The solar cell according to claim 1, wherein the first metal layer (7) is made of at least one of gold, palladium, platinum and titanium.
4. Solar cell according to claim 1, characterized in that the second metal layer (8) has a thickness of 1000nm to 7000 nm.
5. The solar cell according to claim 1, wherein the second metal layer (8) is made of at least one of gold, palladium, platinum, titanium and silver.
6. The solar cell according to any one of claims 1 to 5, wherein the epitaxial layer (2) comprises a nucleation layer (201), a buffer layer (202), a middle-bottom cell tunneling junction (203), a middle cell (204), a middle-top cell tunneling junction (205), a top cell (206), a window layer (207) and a cap layer (208) which are sequentially grown along the surface of the Ge substrate (1) on the side away from the patterned back electrode.
7. A method for manufacturing a solar cell according to any one of claims 1 to 6, comprising the steps of:
s1, growing the epitaxial layer (2) on the surface of the Ge substrate (1);
s2, evaporating and depositing a first metal layer (7) on the surface of one side, away from the epitaxial layer, of the Ge substrate (1);
s3, evaporating and setting the second metal layer (8) on the surface of the first metal layer (7);
s4, manufacturing the negative electrode (9) on the surface of the epitaxial layer (2);
and S5, manufacturing the anti-reflection film (10) on the surface of the negative electrode (9).
8. The manufacturing method according to claim 7, wherein the step S1 includes sequentially growing a nucleation layer (201), a buffer layer (202), a middle-bottom cell tunneling junction (203), a middle cell (204), a middle-top cell tunneling junction (205), a top cell (206), a window layer (207) and a cap layer (208) on the surface of the Ge substrate (1) to form the epitaxial layer (2).
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