CN108258084A - A kind of flexible thin-film solar cell and preparation method thereof - Google Patents
A kind of flexible thin-film solar cell and preparation method thereof Download PDFInfo
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- CN108258084A CN108258084A CN201810076695.XA CN201810076695A CN108258084A CN 108258084 A CN108258084 A CN 108258084A CN 201810076695 A CN201810076695 A CN 201810076695A CN 108258084 A CN108258084 A CN 108258084A
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- epitaxial wafer
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- 239000010409 thin film Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 238000006722 reduction reaction Methods 0.000 claims abstract description 41
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 40
- 238000005498 polishing Methods 0.000 claims abstract description 15
- 238000005422 blasting Methods 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 48
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 103
- 239000004698 Polyethylene Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
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- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003915 cell function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of flexible thin-film solar cells and preparation method thereof, by the way that underlay substrate to be thinned to the weight to reduce flexible thin-film solar cell and occupies volume, and it can make flexible thin-film solar cell that there is more efficient power-mass ratio, and then reduce the weight and volume of spacecraft solar panel；Meanwhile it underlay substrate is thinned by chemical reduction solution can ensure the high mechanical strength of epitaxial wafer and thickness is uniform；In addition, being processed by shot blasting after underlay substrate is thinned by polishing solution, the mechanical strength of epitaxial wafer can be further improved.
Description
Technical field
The present invention relates to technical field of solar batteries, more specifically, are related to a kind of flexible thin-film solar cell
And preparation method thereof.
Background technology
Three-junction gallium arsenide solar cell has many advantages, such as that photoelectric conversion efficiency is high, Radiation hardness is strong, good temp characteristic,
It is widely used in Spacecraft Electrical Power System and ground high power concentrating photovoltaic power station, and has replaced crystal silicon too completely
Positive energy battery becomes the main power source of spacecraft, as being applied in rocket.Although existing three-junction gallium arsenide solar cell
Function admirable, still, existing three-junction gallium arsenide solar cell weight is larger and lacks flexibility, increases the spacecraft sun
The weight and volume of energy solar panel.
Invention content
In view of this, the present invention provides a kind of flexible thin-film solar cell and preparation method thereof, by by substrate base
Plate is thinned the weight to reduce flexible thin-film solar cell and occupies volume, and can have flexible thin-film solar cell
More efficient power-mass ratio, and then reduce the weight and volume of spacecraft solar panel；Meanwhile subtracted by chemistry
Underlay substrate, which is thinned, in thin solution can ensure the high mechanical strength of epitaxial wafer and thickness is uniform；In addition, to substrate base
Plate carry out be thinned after be processed by shot blasting by polishing solution, the mechanical strength of epitaxial wafer can be further improved.
To achieve the above object, technical solution provided by the invention is as follows：
A kind of production method of flexible thin-film solar cell, including：
An epitaxial wafer is provided, the epitaxial wafer includes underlay substrate and is grown on outside the battery on one surface of underlay substrate
Prolong layer；
The protection film layer for coating the epitaxial wafer is formed, the protection film layer corresponds to the underlay substrate away from the battery
Epitaxial layer side is vacancy section；
The epitaxial wafer is immersed in chemical reduction solution, the underlay substrate is carried out to be thinned to preset thickness；
The underlay substrate is processed by shot blasting away from one side surface of battery epitaxial layer using polishing solution；
Remove the protection film layer；
In the battery epitaxial layer positive gate electrode and antireflection layer are sequentially formed away from the underlay substrate side, and
The underlay substrate forms backplate away from the battery epitaxial layer side.
Optionally, the protection film layer includes：
Coat the photoresist film layer of the epitaxial wafer；
And coat the PE film layers of the photoresist film layer.
Optionally, the epitaxial wafer is immersed in chemical reduction solution, the underlay substrate is carried out to be thinned to default thickness
Degree, including：
The epitaxial wafer is immersed in chemical reduction solution, the epitaxial wafer static soak is controlled, with to the substrate base
Plate carries out being thinned to preset thickness.
Optionally, the epitaxial wafer is immersed in chemical reduction solution, the underlay substrate is carried out to be thinned to default thickness
Degree, including：
The epitaxial wafer is immersed in chemical reduction solution；
The epitaxial wafer is taken out after impregnating preset time, epitaxial wafer overturning 180 degree is again dipped into the chemistry subtracts
Thin solution；
It repeats the above steps repeatedly until carrying out being thinned to preset thickness to the underlay substrate.
Optionally, after the epitaxial wafer is taken out after impregnating preset time and by the epitaxial wafer overturning 180 degree again
Before immersing the chemical reduction solution, further include：
The chemical reduction solution is stirred.
Optionally, the backplate includes electrode district and stress relief zone.
Optionally, the electrode district is made of multiple block type electrodes；
And the gap between adjacent block type electrode forms the stress relief zone, and the electrode district and stress release
Area distributes as net shape.
Optionally, the battery epitaxial layer is three-junction gallium arsenide battery epitaxial layer.
Optionally, the underlay substrate is germanium substrate substrate.
Correspondingly, the present invention also provides a kind of flexible thin-film solar cell, the flexible thin-film solar cell is adopted
It is made with the production method of above-mentioned flexible thin-film solar cell.
Compared to the prior art, technical solution provided by the invention has at least the following advantages：
The present invention provides a kind of flexible thin-film solar cell and preparation method thereof, including：One epitaxial wafer is provided, it is described
Epitaxial wafer includes underlay substrate and the battery epitaxial layer for being grown on one surface of underlay substrate；It is formed and coats the epitaxial wafer
Protection film layer, it is vacancy section that the protection film layer, which corresponds to the underlay substrate away from the battery epitaxial layer side,；It will be described outer
Prolong piece to immerse in chemical reduction solution, the underlay substrate is carried out to be thinned to preset thickness；Using polishing solution to the lining
Substrate is processed by shot blasting away from one side surface of battery epitaxial layer；Remove the protection film layer；In the battery extension
Layer sequentially forms positive gate electrode and antireflection layer, and deviate from the electricity in the underlay substrate away from the underlay substrate side
Pond epitaxial layer side forms backplate.
As shown in the above, technical solution provided by the invention reduces fexible film by the way that underlay substrate is thinned
The weight of solar cell and occupancy volume, and can make flexible thin-film solar cell that there is more efficient power-mass ratio,
And then reduce the weight and volume of spacecraft solar panel；Meanwhile by chemical reduction solution to underlay substrate into
Row, which is thinned, can ensure the high mechanical strength of epitaxial wafer and thickness is uniform；In addition, pass through throwing after underlay substrate is thinned
Light solution is processed by shot blasting, can further improve the mechanical strength of epitaxial wafer.
Description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural representation of flexible thin-film solar cell provided by the embodiments of the present application and preparation method thereof
Figure；
Fig. 2 a- Fig. 2 f are each step corresponding construction schematic diagram in Fig. 1；
Fig. 3 is a kind of flow chart to underlay substrate thinning process provided by the embodiments of the present application；
Fig. 4 is a kind of structure diagram of backplate provided by the embodiments of the present application.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment shall fall within the protection scope of the present invention.
As described in background, three-junction gallium arsenide solar cell have photoelectric conversion efficiency is high, Radiation hardness is strong,
The advantages that good temp characteristic, is widely used in Spacecraft Electrical Power System and ground high power concentrating photovoltaic power station,
And substitution crystal silicon solar batteries as the main power source of spacecraft, are such as applied in rocket completely.Existing three knots arsenic
Although changing gallium solar cell function admirable, existing three-junction gallium arsenide solar cell weight is larger and lacks flexible, increasing
The weight and volume of spacecraft solar panel is added.
Based on this, the embodiment of the present application provides a kind of flexible thin-film solar cell and preparation method thereof, by that will serve as a contrast
Substrate is thinned the weight to reduce flexible thin-film solar cell and occupies volume, and can make flexible thin-film solar cell
With more efficient power-mass ratio, and then reduce the weight and volume of spacecraft solar panel；Meanwhile passing through
Underlay substrate, which is thinned, in thinned solution can ensure the high mechanical strength of epitaxial wafer and thickness is uniform；In addition, to lining
Substrate carry out be thinned after be processed by shot blasting by polishing solution, the mechanical strength of epitaxial wafer can be further improved.For reality
Existing above-mentioned purpose, technical solution provided by the embodiments of the present application is as follows, specifically combines Fig. 1 to Fig. 4 and the embodiment of the present application is provided
Technical solution be described in detail.
Refering to what is shown in Fig. 1, for a kind of stream of the production method of flexible thin-film solar cell provided by the embodiments of the present application
Cheng Tu, wherein, the production method of flexible thin-film solar cell includes：
S1, an epitaxial wafer is provided, the epitaxial wafer includes underlay substrate and the electricity for being grown on one surface of underlay substrate
Pond epitaxial layer；
S2, the protection film layer for coating the epitaxial wafer is formed, the protection film layer corresponds to the underlay substrate away from described
Battery epitaxial layer side is vacancy section；
S3, the epitaxial wafer is immersed in chemical reduction solution, the underlay substrate is carried out to be thinned to preset thickness；
S4, the underlay substrate is processed by shot blasting away from one side surface of battery epitaxial layer using polishing solution；
S5, the removal protection film layer；
S6, positive gate electrode and antireflection layer are sequentially formed away from the underlay substrate side in the battery epitaxial layer,
And backplate is formed away from the battery epitaxial layer side in the underlay substrate.
The embodiment of the present application provides a kind of flexible thin-film solar cell and preparation method thereof, including：One extension is provided
Piece, the epitaxial wafer include underlay substrate and the battery epitaxial layer for being grown on one surface of underlay substrate；It is formed described in cladding
The protection film layer of epitaxial wafer, it is vacancy section that the protection film layer, which corresponds to the underlay substrate away from the battery epitaxial layer side,；
The epitaxial wafer is immersed in chemical reduction solution, the underlay substrate is carried out to be thinned to preset thickness；Using polishing solution
The underlay substrate is processed by shot blasting away from one side surface of battery epitaxial layer；Remove the protection film layer；Described
Battery epitaxial layer sequentially forms positive gate electrode and antireflection layer, and carry on the back in the underlay substrate away from the underlay substrate side
Backplate is formed from the battery epitaxial layer side.
As shown in the above, technical solution provided by the embodiments of the present application, it is soft to reduce by being thinned underlay substrate
Property thin-film solar cells weight and occupy volume, and can make flexible thin-film solar cell have more efficient power matter
Ratio is measured, and then reduces the weight and volume of spacecraft solar panel；Meanwhile by chemical reduction solution to substrate base
Plate, which be thinned, can ensure the high mechanical strength of epitaxial wafer and thickness is uniform；In addition, lead to after underlay substrate is thinned
It crosses polishing solution to be processed by shot blasting, the mechanical strength of epitaxial wafer can be further improved.
With reference to the corresponding structure diagram of each step of production process to production method provided by the embodiments of the present application into
Row is described in detail.The specifically schematic diagram with reference to shown in Fig. 1 to Fig. 2 f, wherein, Fig. 2 a- Fig. 2 f are that each step corresponding construction shows in Fig. 1
It is intended to.
With reference to shown in figure 2a, corresponding step S1 provides an epitaxial wafer, and epitaxial wafer includes underlay substrate 100 and is grown on lining
The battery epitaxial layer 200 on 100 1 surface of substrate.
In one embodiment of the application, the underlay substrate that the application provides can be germanium substrate substrate, wherein, germanium lining
The original depth of substrate can be not less than 140 microns, this underlay substrate material and thickness range the application are not done and had
Body limits.
And the battery epitaxial layer provided by the embodiments of the present application can be three-junction gallium arsenide battery epitaxial layer, that is, carry
After underlay substrate, the aufwuchsplate of underlay substrate grow successively forming core layer, middle battery, tunnel layer, top battery and form battery
Epitaxial layer.In addition, when battery epitaxial layer is three-junction gallium arsenide battery epitaxial layer, shape successively again can also be pushed up after battery being formed
Into ohmic contact layer and extension protective layer；Wherein, it when subsequently making positive gate electrode, needs after extension protective layer is removed,
Positive gate electrode is formed on ohmic contact layer, ohmic contact layer is then corresponded to the partial corrosion other than positive gate electrode region
Fall.
With reference to shown in figure 2b, corresponding step S2 forms a protection film layer 300 for wrapping up epitaxial wafer, and protection film layer 300 is right
It is vacancy section that underlay substrate 100 is answered, which to deviate from 200 side of battery epitaxial layer,.
The effect of protection film layer provided by the embodiments of the present application is predominantly during subsequently chemical reduction etc. is carried out, protection
One side surface of side and extension battery layers of epitaxial wafer, avoids above-mentioned zone by corrosion such as chemical reduction solution.
In one embodiment of the application, in order to ensure the significantly more efficient protection epitaxial wafer of protection film layer, the embodiment of the present application
The protection film layer of offer can be more structures.With reference to shown in figure 2b, the protection film layer 300 provided by the embodiments of the present application is wrapped
It includes：
Coat the photoresist film layer 310 of the epitaxial wafer；
And PE (polyethylene, polyethylene) film layer 320 of the photoresist film layer 310 is coated, wherein, pass through
The structure of double shielding film layer, to epitaxial wafer side and battery epi-layer surface is protected not to be corroded and play more sound assurance.
During protection film layer is formed, first, photoresist is coated in the side of epitaxial wafer and the surface of extension battery layers,
Wherein, photoresist can be positive photoresist；Then, firmly treatment is carried out to photoresist and obtains photoresist layer；Finally, in photoetching
Film surface adherency PE film layer obtains protection film layer.
With reference to shown in figure 2c, corresponding step S3 immerses the epitaxial wafer after formation protection film layer in chemical reduction solution, with
Underlay substrate 100 is proceeded by away from 200 side of extension battery layers it is thinned, until being thinned to preset thickness.In addition, to lining
Substrate is carried out after being thinned, and deionized water may be used, integrally-built surface is cleaned.
Carry out the thinned solution of preparation after extension on piece forms protection film layer, chemical reduction solution can choose HF,
HNO3、CH3COOH、H2SO4、H3PO4、HCLO、HBr、HMnO4Wait acid materials in it is one or more prepared with water, most
The concentration range of chemical reduction solution is obtained eventually no more than 75%, and reduction process temperature model then may be used in thinning process
It is 0 degree Celsius~85 degrees Celsius to enclose, and, uses the reduction process time as no more than 100 minutes, most at last including endpoint value
Underlay substrate is thinned to preset thickness.Wherein, it is 140 microns in the original depth of underlay substrate provided by the embodiments of the present application
When, underlay substrate can be thinned to 100 microns~105 microns, including endpoint value.
In one embodiment of the application, what the application provided immerses the epitaxial wafer in chemical reduction solution, to described
Underlay substrate carries out being thinned to preset thickness, including：
The epitaxial wafer is immersed in chemical reduction solution, the epitaxial wafer static soak is controlled, with to the substrate base
Plate carries out being thinned to preset thickness, wherein, by epitaxial wafer immerse chemical reduction solution in after, control epitaxial wafer it is stationary into
Row impregnates, and to finally obtain the epitaxial wafer that thickness is uniform, performance is stablized, avoids epitaxial wafer that shake occurs and influences that effect is thinned.
And thinning process provided by the embodiments of the present application can also take out afterwards at regular intervals overturning impregnate again into
Row is thinned.It is a kind of flow chart to underlay substrate thinning process provided by the embodiments of the present application with specific reference to shown in Fig. 3,
In, it is provided by the embodiments of the present application to immerse the epitaxial wafer in chemical reduction solution, the underlay substrate is thinned to
Preset thickness, including：
S11, the epitaxial wafer is immersed in chemical reduction solution；
S12, the epitaxial wafer is taken out after impregnating preset time, epitaxial wafer overturning 180 degree is again dipped into describedization
It learns and solution is thinned；
S13, more times of the S12 that repeats the above steps are until carry out the underlay substrate to be thinned to preset thickness.
In thinning process is carried out to underlay substrate, after epitaxial wafer is immersed chemical reduction solution, extension can be controlled
Piece static soak, and it (is by epitaxial wafer when initially entering epitaxial wafer that epitaxial wafer is taken out overturning 180 degree after preset time
It is vertical to immerse chemical reduction solution, that is, epitaxial wafer side is immersed downward, and after 180 degree is overturn after preset time, make
The initial bottom surface of epitaxial wafer becomes top surface and initial top surface becomes bottom surface), epitaxial wafer is then immersed into chemical reduction solution again
Reduction processing is carried out, is repeated the above process repeatedly until underlay substrate is thinned to preset thickness, using this mode to substrate base
Plate, which be thinned, can greatly improve thinned rate, save Production Time and improve producing efficiency.In one embodiment of the application,
Preset time can be 10 minutes, this application is not particularly limited.
Further, after the epitaxial wafer is taken out after impregnating preset time and by the epitaxial wafer overturning 180 degree again
Before the secondary immersion chemical reduction solution, further include：
The chemical reduction solution is stirred, wherein, chemical reduction solution is stirred, chemical reduction can be made
The unordered floating of reaction product in solution in the solution, and avoids reaction product from being deposited on solution bottom and cause to adhere to
Occur in the situation of extension on piece.
With reference to shown in figure 2d, corresponding step S4 deviates from battery epitaxial layer 200 1 using polishing solution to underlay substrate 100
Side surface is processed by shot blasting.In addition, after polishing treatment, deionized water may be used, integrally-built surface is carried out
Cleaning.
After underlay substrate is thinned, need to throw underlay substrate away from one side surface of battery epitaxial layer
Light processing, and then the mechanical strength of epitaxial wafer can be improved.Firstly the need of preparation polishing solution, throwing provided by the embodiments of the present application
HF, H may be used in light solution2SO4And H2O2Material is prepared with water, and the concentration of the polishing solution finally obtained is not more than
75%, polishing process temperature range then may be used in polishing process as 0 degree Celsius~85 degrees Celsius, including endpoint value,
And the polishing process time is used as no more than 30 minutes.
With reference to shown in figure 2e, corresponding step S5 removes protection film layer 300.
When protection film layer provided by the embodiments of the present application includes photoresist layer and PE films, epitaxial wafer can be immersed third
Protection film layer is removed in ketone solution, PE film layers and photoresist layer are removed, organic washing then is carried out to epitaxial wafer, is dried
Case dries processing.
With reference to shown in figure 2f, corresponding step S6 is sequentially formed just in battery epitaxial layer 200 away from 100 side of underlay substrate
Face gate line electrode 400 and antireflection layer 500, and in underlay substrate 100 backplate is formed away from 200 side of battery epitaxial layer
600。
When battery epitaxial layer provided by the embodiments of the present application can be three-junction gallium arsenide battery epitaxial layer, and pushed up being formed
When being sequentially formed with ohmic contact layer and extension protective layer after battery again, first choice needs to remove extension protective layer, then in ohm
Positive gate electrode is made on the surface of contact layer；Then, positive gate electrode area is corresponded to using corrosion technology removal ohmic contact layer
Part other than domain；Finally, the vapor deposition of antireflective coating is carried out outside positive gate electrode corresponding region.
In one embodiment of the application, the front electrode thickness that the application provides is not more than 20 microns.And the application is real
The antireflective coating for applying example offer can be double membrane structure, can also be trilamellar membrane structure, and the thickness range of antireflective coating is not
More than 10 microns, wherein, double membrane structure can be the TiO sequentially formed2Layer and Al2O3Layer, trilamellar membrane structure can be successively
The Ti of formation3O5Layer, SiO2Layer and MgF layers.
And the backplate provided by the embodiments of the present application can include electrode district and stress relief zone, wherein, the back of the body
Stress relief zone may be used by the stress release between electrode district and epitaxial wafer in face electrode, avoid between electrode district and epitaxial wafer should
Power is excessive and the situation of epitaxial wafer warpage occurs and occurs.
Refering to what is shown in Fig. 4, for a kind of structure diagram of backplate provided by the embodiments of the present application, wherein, the application
The electrode district that embodiment provides is made of multiple block type electrodes 610；
And the gap 620 between adjacent block type electrode 610 forms the stress relief zone, and the electrode district and should
Power release area distributes as net shape.
In the backplate for making latticed difference, photoresist mask can be formed, stress relief zone is covered,
Then after backplate material is deposited, photoresist mask is removed to obtain backplate.It is provided by the embodiments of the present application
The material of backplate can be Ti, Al, Au, Pd, Ag, can also be the laminated construction that above-mentioned material is formed, to this application
Do not make specific.In addition, backplate thickness provided by the embodiments of the present application is not more than 20 microns.
Wherein, if the making carried out based on method described above to large stretch of underlay substrate, it is also necessary to be finished making electrode
After be split sliver and obtain single solar cell.
Correspondingly, the embodiment of the present application additionally provides a kind of flexible thin-film solar cell, the flexible thin-film solar
Battery is made using the production method of flexible thin-film solar cell that above-mentioned any one embodiment provides.
The embodiment of the present application provides a kind of flexible thin-film solar cell and preparation method thereof, including：One extension is provided
Piece, the epitaxial wafer include underlay substrate and the battery epitaxial layer for being grown on one surface of underlay substrate；It is formed described in cladding
The protection film layer of epitaxial wafer, it is vacancy section that the protection film layer, which corresponds to the underlay substrate away from the battery epitaxial layer side,；
The epitaxial wafer is immersed in chemical reduction solution, the underlay substrate is carried out to be thinned to preset thickness；Using polishing solution
The underlay substrate is processed by shot blasting away from one side surface of battery epitaxial layer；Remove the protection film layer；Described
Battery epitaxial layer sequentially forms positive gate electrode and antireflection layer, and carry on the back in the underlay substrate away from the underlay substrate side
Backplate is formed from the battery epitaxial layer side.
As shown in the above, technical solution provided by the embodiments of the present application, it is soft to reduce by being thinned underlay substrate
Property thin-film solar cells weight and occupy volume, and can make flexible thin-film solar cell have more efficient power matter
Ratio is measured, and then reduces the weight and volume of spacecraft solar panel；Meanwhile by chemical reduction solution to substrate base
Plate, which be thinned, can ensure the high mechanical strength of epitaxial wafer and thickness is uniform；In addition, lead to after underlay substrate is thinned
It crosses polishing solution to be processed by shot blasting, the mechanical strength of epitaxial wafer can be further improved.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide range caused.
Claims (10)
1. a kind of production method of flexible thin-film solar cell, which is characterized in that including：
An epitaxial wafer is provided, the epitaxial wafer includes underlay substrate and the battery extension for being grown on one surface of underlay substrate
Layer；
The protection film layer for coating the epitaxial wafer is formed, the protection film layer corresponds to the underlay substrate away from the battery extension
Layer side is vacancy section；
The epitaxial wafer is immersed in chemical reduction solution, the underlay substrate is carried out to be thinned to preset thickness；
The underlay substrate is processed by shot blasting away from one side surface of battery epitaxial layer using polishing solution；
Remove the protection film layer；
Positive gate electrode and antireflection layer are sequentially formed, and described away from the underlay substrate side in the battery epitaxial layer
Underlay substrate forms backplate away from the battery epitaxial layer side.
2. the production method of flexible thin-film solar cell according to claim 1, which is characterized in that the protection film layer
Including：
Coat the photoresist film layer of the epitaxial wafer；
And coat the PE film layers of the photoresist film layer.
3. the production method of flexible thin-film solar cell according to claim 1, which is characterized in that by the epitaxial wafer
It immerses in chemical reduction solution, the underlay substrate is carried out to be thinned to preset thickness, including：
By the epitaxial wafer immerse chemical reduction solution in, control the epitaxial wafer static soak, with to the underlay substrate into
Row is thinned to preset thickness.
4. the production method of flexible thin-film solar cell according to claim 1, which is characterized in that by the epitaxial wafer
It immerses in chemical reduction solution, the underlay substrate is carried out to be thinned to preset thickness, including：
The epitaxial wafer is immersed in chemical reduction solution；
The epitaxial wafer is taken out after impregnating preset time, it is molten that epitaxial wafer overturning 180 degree is again dipped into the chemical reduction
Liquid；
It repeats the above steps repeatedly until carrying out being thinned to preset thickness to the underlay substrate.
5. the production method of flexible thin-film solar cell according to claim 4, which is characterized in that when impregnating default
Between after take out after the epitaxial wafer and before epitaxial wafer overturning 180 degree is again dipped into the chemical reduction solution, also wrap
It includes：
The chemical reduction solution is stirred.
6. the production method of flexible thin-film solar cell according to claim 1, which is characterized in that the backplate
Including electrode district and stress relief zone.
7. the production method of flexible thin-film solar cell according to claim 6, which is characterized in that the electrode district by
Multiple block type electrode compositions；
And the gap between adjacent block type electrode forms the stress relief zone, and the electrode district and stress relief zone are in
Distributed in grid.
8. the production method of flexible thin-film solar cell according to claim 1, which is characterized in that the battery extension
Layer is three-junction gallium arsenide battery epitaxial layer.
9. the production method of flexible thin-film solar cell according to claim 1, which is characterized in that the underlay substrate
For germanium substrate substrate.
10. a kind of flexible thin-film solar cell, which is characterized in that the flexible thin-film solar cell uses claim 1
The production method of flexible thin-film solar cell described in~9 any one is made.
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| CN110634992A (en) * | 2019-09-04 | 2019-12-31 | 中国电子科技集团公司第十八研究所 | Preparation method of composite structure material substrate for thin film gallium arsenide solar cell |
| CN112071961A (en) * | 2020-11-13 | 2020-12-11 | 南昌凯迅光电有限公司 | Battery substrate thinning method and battery |
| CN112820785A (en) * | 2020-12-28 | 2021-05-18 | 中山德华芯片技术有限公司 | Solar cell chip and manufacturing method thereof |
| CN112909101A (en) * | 2021-01-18 | 2021-06-04 | 中山德华芯片技术有限公司 | Solar cell and manufacturing method thereof |
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| CN112820785A (en) * | 2020-12-28 | 2021-05-18 | 中山德华芯片技术有限公司 | Solar cell chip and manufacturing method thereof |
| CN112909101A (en) * | 2021-01-18 | 2021-06-04 | 中山德华芯片技术有限公司 | Solar cell and manufacturing method thereof |
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