CN112071961A - Battery substrate thinning method and battery - Google Patents
Battery substrate thinning method and battery Download PDFInfo
- Publication number
- CN112071961A CN112071961A CN202011265859.7A CN202011265859A CN112071961A CN 112071961 A CN112071961 A CN 112071961A CN 202011265859 A CN202011265859 A CN 202011265859A CN 112071961 A CN112071961 A CN 112071961A
- Authority
- CN
- China
- Prior art keywords
- substrate
- battery
- germanium substrate
- germanium
- thinning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 187
- 238000000034 method Methods 0.000 title claims abstract description 46
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 131
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 130
- 238000005498 polishing Methods 0.000 claims abstract description 36
- 238000005516 engineering process Methods 0.000 claims abstract description 18
- 238000001704 evaporation Methods 0.000 claims abstract description 17
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 230000008020 evaporation Effects 0.000 claims abstract description 8
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 27
- 238000004140 cleaning Methods 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 18
- 239000000243 solution Substances 0.000 claims description 18
- 239000003292 glue Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004026 adhesive bonding Methods 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 17
- 239000010931 gold Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000009210 therapy by ultrasound Methods 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 235000015842 Hesperis Nutrition 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for thinning a battery substrate and a battery, belonging to the technical field of solar batteries, wherein the technology for thinning the battery substrate comprises the following steps: firstly, manufacturing a front electrode and an antireflection film on a germanium substrate, then bonding the germanium substrate to a temporary substrate by adopting a temporary bonding technology, and then thinning and polishing the surface without the front electrode on the germanium substrate; then further polishing the thinned surface by adopting a solution, carrying out back electrode evaporation on the thinned surface after polishing, and then evaporating the back electrode onto the thinned surface; separating the germanium substrate and the temporary substrate which are connected with each other through bonding removal; and then cutting the germanium substrate and the back electrode evaporated on the germanium substrate to obtain the single battery. The method for thinning the battery substrate has the advantages of greatly reducing the weight of the battery and ensuring the manufacturing yield, and the battery manufactured by the technology disclosed by the invention has the advantages of light weight and high efficiency.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a cell substrate thinning method and a cell.
Background
Gallium arsenide triple-junction solar cells (structure GaInP/GaAs/Ge) with germanium as a substrate have basically replaced crystalline silicon solar cells at present, and become the main space power supply used by the existing spacecraft. The main reason is that the triple-junction gallium arsenide solar cell has higher conversion efficiency, and the conversion efficiency of the existing triple-junction gallium arsenide solar cell reaches 30% on average and far exceeds the conversion efficiency of a crystalline silicon cell.
However, the density of the triple junction gallium arsenide solar cell is greatly increased due to the use of the Ge substrate. The density of the Ge substrate is about twice that of a crystalline silicon cell. Resulting in a doubling of weight even though more output power can be provided for the same area. This greatly increases the launch cost of the spacecraft. Currently, with rockets, the cost of launch is approximately $ 50000/kg.
Another approach to reduce cost is to use GaAs thin film batteries. However, the method has the disadvantages of too great difficulty in the prior art, extremely low yield, high cost and very difficult large-scale application.
Disclosure of Invention
In order to overcome the defect of heavy weight of a germanium (Ge) -based battery in the prior art, the invention aims to provide a method for thinning a battery substrate and a battery, so that the battery manufactured by the technology has high yield and is not easy to fragment, and the weight of the original single battery can be greatly reduced.
To achieve the object, the invention provides a method for thinning a battery substrate, comprising the following steps:
s1, manufacturing a front electrode and an antireflection film on the germanium substrate;
s2, bonding the surface of the germanium substrate with the front electrode to the temporary substrate by using a temporary bonding technology;
s3, thinning the surface without the front electrode on the germanium substrate, and then polishing the thinned surface;
s4, further polishing the polished surface of the germanium substrate by using the solution, and then carrying out back electrode evaporation on the polished surface;
and S5, separating the temporary substrate from the germanium substrate through debonding, and then cutting the germanium substrate and the back electrode evaporated on the germanium substrate to obtain the single battery.
Preferably, the step S1 includes the steps of:
s11, diffusing a germanium bottom battery on the germanium substrate at one time;
s12, carrying out organic cleaning on the germanium substrate after the above process;
s13, manufacturing a front electrode pattern by using a negative photoresist stripping technology;
s14, evaporating metal electrodes on the surface of the germanium-based battery by using an electron beam evaporation technology;
s15, stripping the electrode, and stripping the metal electrode which is not positioned on the front electrode pattern position from the germanium bottom battery;
s16, selective etching, namely removing the GaAs without electrode on the surface through the selective etching;
s17, evaporating an antireflection film on the surface of the battery;
and S18, etching the antireflection film evaporated in the step.
Preferably, the step S2 includes the steps of:
s21, carrying out organic cleaning on the germanium substrate after the step S1 is finished;
s22, gluing and baking, namely coating temporary bonding glue on the germanium substrate and the temporary substrate, and baking after the temporary bonding glue is coated;
and S23, bonding, namely temporarily bonding the germanium substrate and the temporary substrate which are finished by the step S22.
Preferably, the step S3 includes the steps of:
s31, thinning, namely thinning the germanium substrate after the step S2 by using a grinder;
and S32, polishing, namely polishing the surface thinned in the step S31 by using a polishing machine.
Preferably, the step S4 includes the steps of:
s41, solution polishing, namely polishing the mechanically polished germanium substrate through the solution;
s42, carrying out organic cleaning on the germanium substrate after the step S41 is finished;
s43, performing electrode vapor deposition, and performing vapor deposition of a back electrode on the polished surface in step S3 by using an electron beam evaporation method.
Preferably, the step S5 includes the steps of:
s51, debonding, namely debonding the bonded temporary substrate and the germanium substrate to separate the bonded temporary substrate and the germanium substrate;
s52, cleaning after bonding, namely cleaning after bonding the germanium substrate which is subjected to bonding removal, and removing bonding glue on the germanium substrate;
s53, alloy treatment;
s54, coating glue on the front surface, and coating a layer of photoresist on the surface of the front surface electrode on the germanium substrate;
s55, scribing, cutting the germanium substrate and the back electrode attached to the germanium substrate to obtain a single battery;
and S56, removing the photoresist.
Preferably, the method further comprises section etching, and since cutting chips are attached to the side surface of the germanium substrate during cutting, the side surface is etched by using a mixed solution of citric acid, hydrogen peroxide and water.
Preferably, the front electrode pattern is a comb-shaped electrode structure.
Preferably, the middle part of the comb-shaped electrode structure is provided with a transverse main grid.
The invention discloses a battery which is manufactured by adopting the battery substrate thinning method.
The invention has the beneficial effects that:
the invention provides a battery substrate thinning method and a battery, wherein the battery substrate thinning method comprises the following steps: firstly, manufacturing a front electrode and an antireflection film on a germanium substrate, then bonding the germanium substrate to a temporary substrate by adopting a temporary bonding technology, and thinning and polishing the surface without the front electrode on the germanium substrate after the bonding of the front electrode and the antireflection film is finished; then further polishing (chemical polishing) the thinned surface by adopting a solution, carrying out back electrode evaporation on the thinned surface after polishing, and evaporating the back electrode onto the thinned surface in an electron beam evaporation mode; separating the germanium substrate and the temporary substrate which are connected with each other through bonding removal; and then cutting the germanium substrate and the back electrode evaporated on the germanium substrate to obtain the single battery. In summary, according to the method for thinning the battery substrate disclosed by the invention, the germanium substrate (epitaxial substrate) is thinned, so that the weight of the battery is greatly reduced (by more than 2/3), and the temporary substrate and the temporary bonding technology are adopted in the thinning process, so that the probability of breaking the battery substrate in the thinning process is reduced, the yield of the single battery is greatly ensured, and the manufacturing cost is reduced. The battery manufactured by adopting the cell substrate thinning technology provided by the invention has the advantages of light weight, light weight and high efficiency.
Drawings
FIG. 1 is a schematic structural diagram of a front electrode disclosed in the present invention;
FIG. 2 is a schematic view of a bonded structure of a germanium substrate and a temporary substrate;
FIG. 3 is a schematic structural view of a germanium substrate before thinning;
FIG. 4 is a schematic view of a structure after a back electrode is evaporated on a germanium substrate;
fig. 5 is a schematic structural view of the germanium substrate and the temporary substrate after being debonded.
In the figure:
1. a front electrode; 2. a germanium substrate; 3. a temporary substrate; 4. a temporary bonding glue; 5. a back electrode; 11. fine grids; 12. intersecting the main grid; 13. a main electrode; 21. and thinning the germanium substrate.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
The first embodiment is as follows:
as shown in fig. 1 to fig. 5, the method for thinning a battery substrate provided in this embodiment includes the following steps:
and S1, manufacturing the front electrode 1 and the antireflection film on the germanium substrate 2.
S2, bonding the face of the germanium substrate 2 where the front electrode 1 exists to the temporary substrate 3 by using a temporary bonding technique, so that the germanium substrate 2 can be attached to the temporary substrate 3, so as to facilitate the subsequent thinning of the epitaxial portion (epitaxial substrate) of the germanium substrate 2, and bonding the germanium substrate 2 to the temporary substrate 3 makes the germanium substrate 2.
And S3, thinning the surface (the outer side surface of the epitaxial substrate) without the front electrode 1 on the germanium substrate 2, and polishing the thinned surface, wherein a grinding machine is adopted for thinning in the thinning process, and a polishing machine is adopted for polishing in the polishing process. Because the germanium substrate 2 is bonded with the temporary substrate 3, when the germanium substrate 2 is ground and thinned by a grinding machine and the germanium substrate 2 is polished by a polishing machine, the germanium substrate 2 can bear larger force, the phenomenon that the germanium substrate 2 is broken is not easy to occur, and the yield of manufacturing batteries is further improved.
S4, further polishing the polished surface of the germanium substrate 2 by using the solution, then performing back electrode 5 evaporation on the polished surface, wherein the back electrode 5 evaporation adopts an electron beam evaporation technology (electron beam evaporation), and the electron beam evaporation can accurately realize the bombardment of the target material in the crucible by using high-energy electrons by using the cooperation of an electromagnetic field, so that the target material is melted and deposited on the germanium substrate.
S5, separating the temporary substrate 3 from the germanium substrate 2 by debonding, and then cutting the germanium substrate 2 and the back electrode 5 deposited on the germanium substrate 2 to obtain a single cell.
In summary, the battery substrate thinning technology disclosed by the invention has the advantages that the weight of the battery is greatly reduced (over 2/3 is reduced) by thinning the germanium substrate 2 (epitaxial substrate), and the probability of battery substrate breakage in the thinning process is reduced by adopting the temporary substrate 3 and applying the temporary bonding technology in the thinning process, so that the yield of single batteries is greatly ensured, and the manufacturing cost is reduced
Further, step S1 includes the steps of:
and S11, primarily diffusing the germanium bottom cell on the germanium substrate 2. GaAs sub-cells and GaInP sub-cells are grown on the germanium substrate 2 in an epitaxial growth mode, the sub-cells are connected through tunneling junctions, and the tunneling junctions are GaInP/AlGaAs. The window layer of the top cell is AlInP, and the final ohmic contact layer is GaAs.
And S12, carrying out organic cleaning on the germanium substrate 2 after the above process. The method comprises the following specific steps: acetone 1 ultrasonic treatment for 5min, acetone 2 ultrasonic treatment for 5min, isopropanol 1 ultrasonic treatment for 5min, isopropanol 2 ultrasonic treatment for 5min → isopropanol soaking for 90s → 110 ℃ nitrogen oven drying for 15 min; wherein the temperature of the acetone is controlled to be 25-30 ℃, and the temperature of the isopropanol is controlled to be 45 +/-5 ℃. Impurities such as dust, water vapor and the like on the surface of the epitaxially grown germanium substrate 2 are removed by organic cleaning.
S13, a positive electrode 1 is patterned by using a negative resist stripping technique (photolithography). And uniformly distributing the photoresist on the whole surface of the germanium substrate 2, controlling the thickness of the photoresist by combining with rotation time, and after the photoresist is uniformly distributed, baking the photoresist in an oven at 100 ℃ for about 30min for evaporating redundant water. After completion of baking, exposure was performed using ultraviolet rays having a wavelength of 365nm at a dose of 60mj/cm2, and the photoresist was again baked in an oven at 100 ℃ for about 30min to denature the photoresist. After that, the photoresist is developed by using 2% by mass KOH solution, and according to the characteristics of the negative photoresist, the part not irradiated by the uv light is dissolved in the developing solution, so that the desired pattern of the front electrode 1 is left on the surface after the development.
And S14, evaporating metal electrodes on the surface of the germanium-based battery by using an electron beam evaporation technology. The electrode structure is as follows: the thickness of Au/AuGeNi/Au/Ag/Au is 50/150/100/3000/200 in sequence, the unit is nm, wherein the first layer of Au is bottom gold and is used for increasing the adhesion of the electrode, and the second layer of AuGeNi is a doped layer and is used for realizing ohmic contact between the electrode and the semiconductor material. The subsequent AuAgAu is a solder joint prepared for subsequent wire bonding. The structure of gold-coated silver is adopted because Ag material is low in cost, and gold-plated surface can ensure that metal is not oxidized.
And S15, stripping the electrode, and stripping the metal electrode which is not positioned on the pattern position of the front electrode 1 from the germanium bottom battery. And immersing the evaporated germanium-based battery into an acetone solution, and carrying out ultrasonic cleaning. The photoresist is dissolved by acetone and then carries away the metal attached to the photoresist, while the metal without the photoresist remains on the epitaxial layer, so that the metal forms the pattern of the front electrode 1.
S16, selective etching, namely removing the GaAs without electrode on the surface through the selective etching; a mixed solution of citric acid and hydrogen peroxide is used, and the temperature is set to 35 ℃. The solution ratio is citric acid H2O2And (1: 2). The reason for using citric acid is that the selectivity ratio of the citric acid solution to GaAs and AlInP is very high, so that the window layer material AlInP can be well protected while etching GaAs, and in addition, the citric acid solution has very little side etching to GaAs material, so that GaAs under the electrode can be protected from side etching, and conductivity is ensured. Absorption of light by GaAs without electrodes is avoided by selective etching.
And S17, evaporating an antireflection film on the surface of the battery. The antireflection film is evaporated on the surface of the battery piece (the battery with the germanium bottom), so that the reflectivity of the surface of the battery can be effectively reduced. The evaporation material is selected from titanium dioxide (TiO)2) And aluminum oxide (Al)2O3) The first layer being TiO2The thickness is in the range of 43nm-50nm, and the second layer is Al2O3The thickness range is 70nm-80 nm. The double-layer film has an average reflectivity of less than 8% in the wavelength range of 400nm-1500nm and an average reflectivity of less than 5% in the wavelength range of 400nm-800 nm.
And S18, etching the antireflection film evaporated in the step. The antireflection film on the main electrode 13 is removed by using a positive photoresist mask alignment technology and a 10% HF (hydrofluoric acid) aqueous solution, so that subsequent welding is facilitated.
Further, step S2 includes the steps of:
s21, performing organic cleaning, namely performing organic cleaning on the germanium substrate 2 after the step S1, wherein the specific cleaning step is as described in the step S12, and removing impurities, moisture and the like on the surface of the germanium substrate 2 through organic cleaning so as to facilitate subsequent bonding.
And S22, gluing and baking, namely coating the temporary bonding glue 4 on the germanium substrate 2 and the temporary substrate 3, and baking after the coating is finished. After organic cleaning, the surface of the germanium substrate 2 (the surface of the germanium substrate 2 provided with the front motor) is coated with a temporary bonding adhesive 4. The present embodiment uses a temporary bonding paste 4 of a pyrolytic type. The germanium substrate 2 and the temporary substrate 3 are both glued. The temporary substrate 3 uses a polished sapphire or quartz plate. The temporary bonding glue 4 is coated on the surfaces of the germanium substrate 2 and the temporary substrate 3 uniformly by adopting a rotary gluing method, namely, the rotation of the germanium substrate 2, and the specific parameters are as follows: step 1: 1000RPM =15s, step2:2000RPM =30s, and after coating, baking the coating in an N2 oven at 120 ℃ for 2-5 min.
And S23, bonding, and temporarily bonding the germanium substrate 2 and the temporary substrate 3 which are finished in the step S22. And after the gluing and baking of the germanium substrate 2 and the temporary substrate 3 are finished, temporary bonding is carried out. That is, the wafer and the temporary substrate 3 are bonded to each other under a vacuum atmosphere with a constant pressure. The bonding parameters are that the pressing time is 2min-3min, the vacuum is less than or equal to 5mbar, the temperature is 120-150 ℃, and the pressure is 300-400 kgf.
Further, step S3 includes the steps of:
and S31, thinning, namely thinning the germanium substrate 2 after the step S2 is finished by using a grinder.
And S32, polishing, namely polishing the surface thinned in the step S31 by using a polishing machine.
The method comprises the specific steps of firstly grinding the germanium substrate by using a grinding wheel grinder, and then polishing the germanium substrate by using a CMP method, wherein the specific thickness of the germanium substrate is designed according to the actual situation. Polishing is carried out under the working pressure ranging from 1.5psi to 2psi, the upper disc rotating speed ranges from 90rpm to 100rpm, the lower disc rotating speed ranges from 80rpm to 90rpm, the flow range of polishing solution is 80 ml/min to 90ml/min, the polishing time is 5 minutes, the abrasive material is silicon dioxide, and is spherical with the diameter ranging from 30nm to 50nm, wherein the polishing solution can be selected from the following components: 15g of abrasive, 1.5 g of inorganic base, 70ml of 40% silica gel and 5.25g of additive. After the polishing is completed, organic cleaning is performed (the cleaning step is as described in step S12).
Further, step S4 includes the steps of:
and S41, polishing the mechanically polished germanium substrate 2 by the solution. The selective dissolution of the uneven area of the polished surface of the germanium substrate 2 by the chemical etching action of a chemical reagent is adopted to eliminate grinding marks and achieve erosion leveling.
S42, performing organic cleaning on the germanium substrate 2 after the step S41 is completed (the cleaning step is as the step S12);
s43, electrode vapor deposition, wherein the back electrode 5 is vapor-deposited on the polished surface in step S3 by using an electron beam evaporation method. The back electrode 5 is made of palladium, silver and Au in sequence, and the thickness is 100nm, 2500nm and 200nm in sequence. The palladium is positioned at the innermost layer, the silver is positioned at the middle layer, and the outermost layer is Au (gold). The structure of gold-coated silver is adopted because the cost of Ag material is low, and the gold-coated surface can ensure that the metal is not oxidized (the chemical activity of gold (Au) is lower than that of silver (Ag)).
Further, step S5 includes the steps of:
s51, debonding, and debonding the bonded temporary substrate 3 and the germanium substrate 2 to separate them. The germanium substrate 2 is subjected to electrode evaporation and debonding. The method of debonding is a thermal slip method. The germanium bottom cell was placed on a hot plate set at a temperature between 200 deg.C + -5 deg.C. And after the bonding glue loses viscosity, sucking the temporary substrate 3 by using a vacuum suction pen, and sliding in the horizontal direction until the temporary substrate 3 is separated from the germanium substrate 2.
And S52, cleaning after bonding, cleaning the bonded germanium substrate 2 after bonding, and removing the bonding glue on the germanium substrate 2. And during cleaning, propylene glycol methyl ether acetate matched with the bonding glue is used, and the bonding glue is removed by ultrasonic cleaning.
And S53, alloy treatment. The wafer (the combination of the germanium substrate 2, the front electrode 1 and the back electrode 5) after the step S52 is subjected to alloying treatment under the temperature of 350 ℃ to 380 ℃ for 10 min.
And S54, coating glue on the front surface, coating a layer of photoresist on the surface of the front surface electrode 1 on the germanium substrate 2, and setting the photoresist to protect the front surface of the battery from being damaged when the wafer is cut, so that the production yield is improved.
And S55, scribing, and cutting the germanium substrate 2 and the back electrode 5 attached to the germanium substrate to obtain the single battery. A blade cutter was used for dicing.
And S56, removing the photoresist, and cleaning the single battery obtained in the step S55 (negative photoresist is adopted, and the photoresist on the germanium substrate 2 can be easily removed by a developing solution because the photoresist is not exposed).
Furthermore, the method also comprises section corrosion, and cutting scraps are attached to the side surface of the germanium substrate 2 during cutting, so that the side surface is corroded by adopting a mixed solution of citric acid, hydrogen peroxide and water. Because cutting chips are attached to the side face of the chip during cutting, the side face is corroded by using a mixed solution of citric acid, hydrogen peroxide and water, the mixing ratio is 1:1:2, the constant temperature is 45 ℃, the corrosion time is 2 minutes, and the method is also used for preventing the side face of the chip from electric leakage.
Further, the front electrode 1 is in a comb-shaped electrode structure. The comb-shaped electrode structure comprises a plurality of fine grids 11, the fine grids 11 adopt a gradual change structure, the width of the top end of each fine grid is 20 micrometers, and the width of the tail end of each fine grid is 10 micrometers, so that the shielding area of the electrode is reduced to the maximum extent. The electrode shading ratio designed in this way is only 2.89%.
Further, the middle of the comb electrode structure is provided with a transverse main grid 12. By arranging the transverse main grid 12 in the middle of the comb-shaped electrode structure, a current can still be conducted to the main electrode 13 through the transverse main grid 12 even if there is an interruption of the individual fine grid 11, because the transverse main grid 12 is connected to all electrodes. The intersecting main gate 12 is primarily used to increase current collection.
Example two:
the cell provided in this embodiment is made by the cell substrate thinning method in the first embodiment, has lighter weight, and has a gallium arsenide triple junction structure (structure GaInP/GaAs/Ge) with germanium as a substrate, which has higher conversion efficiency compared with a conventional crystalline silicon solar cell. The cell (solar cell) in this example has a conversion efficiency of up to 30%. Furthermore, the battery disclosed by the embodiment has the advantages of light weight and high efficiency.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the spirit and scope of the invention. The present invention is not to be limited by the specific embodiments disclosed herein, and other embodiments that fall within the scope of the claims of the present application are intended to be within the scope of the present invention.
Claims (9)
1. A method for thinning a battery substrate is characterized by comprising the following steps:
s1, manufacturing a front electrode and an antireflection film on the germanium substrate;
s2, bonding the surface of the germanium substrate with the front electrode to the temporary substrate by using a temporary bonding technology;
s3, thinning the surface without the front electrode on the germanium substrate, and then polishing the thinned surface;
s4, further polishing the polished surface of the germanium substrate by using the solution, and then carrying out back electrode evaporation on the polished surface;
s5, separating the temporary substrate from the germanium substrate through bonding separation, and then cutting the germanium substrate and a back electrode evaporated on the germanium substrate to obtain a single battery;
the step S1 includes the steps of:
s11, diffusing a germanium bottom battery on the germanium substrate at one time;
s12, carrying out organic cleaning on the germanium substrate after the above process;
s13, manufacturing a front electrode pattern by using a negative photoresist stripping technology;
s14, evaporating metal electrodes on the surface of the germanium-based battery by using an electron beam evaporation technology;
s15, stripping the electrode, and stripping the metal electrode which is not positioned on the front electrode pattern position from the germanium bottom battery;
s16, selective etching, namely removing the GaAs without electrode on the surface through the selective etching;
s17, evaporating an antireflection film on the surface of the battery;
and S18, etching the antireflection film evaporated in the step.
2. The method for thinning the battery substrate according to claim 1, wherein the step S2 comprises the steps of:
s21, carrying out organic cleaning on the germanium substrate after the step S1 is finished;
s22, gluing and baking, namely coating temporary bonding glue on the germanium substrate and the temporary substrate, and baking after the temporary bonding glue is coated;
and S23, bonding, namely temporarily bonding the germanium substrate and the temporary substrate which are finished by the step S22.
3. The method for thinning the battery substrate according to claim 1, wherein the step S3 comprises the steps of:
s31, thinning, namely thinning the germanium substrate after the step S2 by using a grinder;
and S32, polishing, namely polishing the surface thinned in the step S31 by using a polishing machine.
4. The method for thinning the battery substrate according to claim 1, wherein the step S4 comprises the steps of:
s41, solution polishing, namely polishing the mechanically polished germanium substrate through the solution;
s42, carrying out organic cleaning on the germanium substrate after the step S41 is finished;
s43, performing electrode vapor deposition, and performing vapor deposition of a back electrode on the polished surface in step S3 by using an electron beam evaporation method.
5. The method for thinning the battery substrate according to claim 1, wherein the step S5 comprises the steps of:
s51, debonding, namely debonding the bonded temporary substrate and the germanium substrate to separate the bonded temporary substrate and the germanium substrate;
s52, cleaning after bonding, namely cleaning after bonding the germanium substrate which is subjected to bonding removal, and removing bonding glue on the germanium substrate;
s53, alloy treatment;
s54, coating glue on the front surface, and coating a layer of photoresist on the surface of the front surface electrode on the germanium substrate;
s55, scribing, cutting the germanium substrate and the back electrode attached to the germanium substrate to obtain a single battery;
and S56, removing the photoresist.
6. The method for thinning the battery substrate according to claim 1, wherein:
the method also comprises section corrosion, and cutting scraps are attached to the side surface of the germanium substrate during cutting, so that the side surface is corroded by adopting a mixed solution of citric acid, hydrogen peroxide and water.
7. The method for thinning the battery substrate according to claim 1, wherein:
the front electrode pattern is of a comb-shaped electrode structure.
8. The method for thinning the battery substrate according to claim 7, wherein:
and the middle part of the comb-shaped electrode structure is provided with a transverse main grid.
9. A battery fabricated using the battery substrate thinning technique of any one of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011265859.7A CN112071961A (en) | 2020-11-13 | 2020-11-13 | Battery substrate thinning method and battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011265859.7A CN112071961A (en) | 2020-11-13 | 2020-11-13 | Battery substrate thinning method and battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112071961A true CN112071961A (en) | 2020-12-11 |
Family
ID=73655133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011265859.7A Pending CN112071961A (en) | 2020-11-13 | 2020-11-13 | Battery substrate thinning method and battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112071961A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102104087A (en) * | 2010-12-15 | 2011-06-22 | 上海理工大学 | Method for preparing flexible thin film solar cell |
| CN104733556A (en) * | 2015-03-30 | 2015-06-24 | 扬州乾照光电有限公司 | Three-node GaAs solar cell with surface roughening structure and preparation method thereof |
| CN105047762A (en) * | 2015-08-27 | 2015-11-11 | 河北英沃泰电子科技有限公司 | Process for manufacturing gallium arsenide solar cell |
| CN108258084A (en) * | 2018-01-26 | 2018-07-06 | 扬州乾照光电有限公司 | A kind of flexible thin-film solar cell and preparation method thereof |
| KR20180097288A (en) * | 2017-02-23 | 2018-08-31 | 한국에너지기술연구원 | Flexible substrate chucking device and fabricating method of cigs base thin film solar cell using the same |
| CN108682713A (en) * | 2018-05-17 | 2018-10-19 | 天津三安光电有限公司 | High efficiency germanium base flexibility multijunction solar cell and preparation method thereof |
-
2020
- 2020-11-13 CN CN202011265859.7A patent/CN112071961A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102104087A (en) * | 2010-12-15 | 2011-06-22 | 上海理工大学 | Method for preparing flexible thin film solar cell |
| CN104733556A (en) * | 2015-03-30 | 2015-06-24 | 扬州乾照光电有限公司 | Three-node GaAs solar cell with surface roughening structure and preparation method thereof |
| CN105047762A (en) * | 2015-08-27 | 2015-11-11 | 河北英沃泰电子科技有限公司 | Process for manufacturing gallium arsenide solar cell |
| KR20180097288A (en) * | 2017-02-23 | 2018-08-31 | 한국에너지기술연구원 | Flexible substrate chucking device and fabricating method of cigs base thin film solar cell using the same |
| CN108258084A (en) * | 2018-01-26 | 2018-07-06 | 扬州乾照光电有限公司 | A kind of flexible thin-film solar cell and preparation method thereof |
| CN108682713A (en) * | 2018-05-17 | 2018-10-19 | 天津三安光电有限公司 | High efficiency germanium base flexibility multijunction solar cell and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102222734B (en) | Method for manufacturing inverted solar cell | |
| US10374120B2 (en) | High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials | |
| KR102015072B1 (en) | Method for production of wafer based solar panels | |
| JP5564358B2 (en) | Photoelectric conversion device and manufacturing method thereof | |
| JP3672436B2 (en) | Method for manufacturing solar battery cell | |
| US20050217717A1 (en) | Photovoltaic cell and method of manufacture of photovoltaic cells | |
| WO2006015185A2 (en) | GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER | |
| CN104247047B (en) | Manufacture of multijunction solar cell devices | |
| JPH10270361A (en) | Semiconductor device and its manufacturing method | |
| JP2016509376A (en) | Photoactive device having a low bandgap active layer configured to improve efficiency and related methods | |
| CN108269864B (en) | Flexible solar cell and preparation method thereof | |
| CN111799344A (en) | Flexible gallium arsenide solar cell and manufacturing method thereof | |
| CN113690347A (en) | Manufacturing method of mini LED with sub-wavelength anti-reflection grating | |
| CN112018216A (en) | Method for transferring solar cell substrate | |
| JP4987191B2 (en) | Method for manufacturing integrated thin film solar cell | |
| Gerhards et al. | Mechanically V-textured low cost multicrystalline silicon solar cells with a novel printing metallization | |
| CN109755351B (en) | Flexible thin film solar cell and manufacturing method thereof | |
| CN112071961A (en) | Battery substrate thinning method and battery | |
| JPH114008A (en) | Manufacture of thin film solar battery | |
| CN104867989B (en) | High-efficiency flexible GaAs solar cell and manufacturing method thereof | |
| CN112103365A (en) | Method for manufacturing three-junction solar cell and three-junction solar cell | |
| CN104681652A (en) | Flip multi-junction solar cell and preparation method thereof | |
| CN112993063B (en) | Method for manufacturing ohmic contact electrode of optical communication chip | |
| CN110828581A (en) | Flexible solar cell and manufacturing method thereof | |
| CN104979312B (en) | Semiconductor structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201211 |
|
| RJ01 | Rejection of invention patent application after publication |