CN109638110A - A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure - Google Patents
A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure Download PDFInfo
- Publication number
- CN109638110A CN109638110A CN201811546717.0A CN201811546717A CN109638110A CN 109638110 A CN109638110 A CN 109638110A CN 201811546717 A CN201811546717 A CN 201811546717A CN 109638110 A CN109638110 A CN 109638110A
- Authority
- CN
- China
- Prior art keywords
- sinx
- layer
- back side
- preparation
- passivating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910004205 SiNX Inorganic materials 0.000 title claims abstract description 122
- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 28
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 28
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 238000002161 passivation Methods 0.000 claims abstract description 33
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 18
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 5
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- 239000011521 glass Substances 0.000 claims abstract description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 22
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 239000012467 final product Substances 0.000 abstract description 2
- 238000005498 polishing Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 99
- 239000007789 gas Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 11
- 239000012495 reaction gas Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 5
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of preparation methods based on two-sided PERC cell piece back side SiNx multi-layer film structure, and the preparation method comprises the following steps: to monocrystalline silicon piece carry out cleaning and texturing after through diffuseing to form PN junction；By the silicon chip back side polishing with PN junction, phosphorosilicate glass and etching edge are removed；Later first in the backside deposition Al of silicon wafer2O3Passivation layer, then in Al2O3SiNx passivating film is deposited on passivation layer, the SiNx passivating film is multilayered structure；In the backside laser local openings of silicon wafer, and silk-screen printing, sintering after the front deposition SiNx antireflective film of the silicon wafer；Close to the Al in multilayered structure SiNx passivating film2O3The refractive index of the SiNx passivating film of passivation layer is higher than far from the Al2O3The refractive index of the SiNx passivating film of passivation layer.A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure of the invention, the absorption for enabling final product that cell backside is effectively promoted to light, there is apparent gain to double-side cell back side short circuit current, improves the generating efficiency at the cell piece back side.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, and in particular to one kind is based on the two-sided PERC cell piece back side
The preparation method of SiNx multi-layer film structure.
Background technique
With the continuous development of photovoltaic technology, crystal silicon solar batteries as with it is a kind of convert solar energy into electrical energy it is clear
Clean energy products are grown rapidly.
And as the competition of photovoltaic industry is more and more fierce, reduce cost and improve efficiency becoming more and more important.Part
Back contacts solar battery P ERC technology is greatly improved the open-circuit voltage and short circuit current of battery with its good passivating structure,
To improve battery efficiency.With the development of technology, PERC has gradually replaced traditional battery structure, becomes mainstream production skill
Art.And two-sided PERC is not necessarily to add any additional step on the basis of conventional PERC battery blade technolgy, it only need to be by back side part
Alum gate cable architecture substitutes the aluminium paste all covered, so that it may realize the function of generating electricity on two sides, further improve PERC cell piece
Competitiveness.
The PERC passivating back film layer used in industry at present also promising Al2O3/SiNx laminated construction, but SiNx is blunt
Changing film is mostly monofilm or duplicature, and the refractive index for being located at the SiNx passivating film of outer layer is greater than the SiNx passivating film positioned at internal layer
Refractive index.Such technical solution bring the disadvantage is that: internal layer SiNx refractive index is lower, insufficient to the passivation of silicon substrate, single
Film structure keeps back surface higher to the reflectivity of light, is unfavorable for the promotion of short circuit current.
Summary of the invention
In view of this, in order to overcome the drawbacks of the prior art, the object of the present invention is to provide one kind based on two-sided PERC electricity
Battery can be effectively promoted in the preparation method of pond piece back side SiNx multi-layer film structure, the silicon wafer obtained by the preparation method
Absorption of the back side to light has apparent gain to double-side cell back side short circuit current, improves the generating efficiency at the cell piece back side.
In order to achieve the above object, the following technical solution is employed by the present invention:
A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure, the preparation method include with
Lower step: to monocrystalline silicon piece carry out cleaning and texturing after through diffuseing to form PN junction；By the silicon chip back side polishing with PN junction, go
Except phosphorosilicate glass and etching edge；Later first in the backside deposition Al of silicon wafer2O3Passivation layer, then in Al2O3It is deposited on passivation layer
SiNx passivating film, the SiNx passivating film are multilayered structure；In silicon wafer after the front deposition SiNx antireflective film of the silicon wafer
Backside laser local openings, and silk-screen printing, sintering；Close to the Al in multilayered structure SiNx passivating film2O3The SiNx of passivation layer
The refractive index of passivating film is higher than far from the Al2O3The refractive index of the SiNx passivating film of passivation layer.By in silicon chip back side
Al2O3Multilayer SiNx passivating film is set on passivation layer, absorption of the back side to light of silicon wafer can be increased, effectively improves battery back
The short circuit current in face improves the transfer efficiency at the cell piece back side.
Preferably, the Al2O3The depositing temperature of passivation layer is 200~300 DEG C.
Preferably, the Al2O3The deposition thickness of passivation layer is 10~20nm.
Preferably, the depositing temperature of the SiNx passivating film is 400~600 DEG C.
Preferably, the overall thickness of the SiNx passivating film of multilayered structure is 75~80nm, the SiNx of multilayered structure
Total refractive index of passivating film is 2.10~2.13.
Preferably, the SiNx passivating film is more than or equal to three layers.It can be three-decker, or four layers or more
SiNx passivation film structure.
It is further preferred that the SiNx passivating film is three-decker.
Wherein, it is 20~50nm that SiNx described in first layer, which is passivated film thickness, and refractive index n1 is 2.2~2.3, gas flow SiH4
For 2000~3000sccm, NH3For 10500sccm~11500sccm, pressure 1800mtorr, radio-frequency power be 5kW~
9kW。
It is 20~50nm that SiNx described in the second layer, which is passivated film thickness, and refractive index n2 is 2.1~2.2, gas flow SiH4For
1500~2500sccm, NH3For 11500sccm~12500sccm, pressure 1800mtorr, radio-frequency power is 5kW~9kW.
It is 20~50nm that SiNx described in third layer, which is passivated film thickness, and refractive index n3 is 2.0~2.1, gas flow SiH4It is 600
~1600sccm, NH3For 12000sccm~13000sccm, pressure 1800mtorr, radio-frequency power is 5kW~9kW.
Compared with prior art, the invention has the beneficial effects that: one kind of the invention based on two-sided PERC cell piece carry on the back
The preparation method of face SiNx multi-layer film structure, passes through the Al in silicon chip back side2O3Multilayer SiNx passivating film is set on passivation layer, is made
Absorption of the cell backside to light can be effectively promoted in the product obtained finally, have significantly to double-side cell back side short circuit current
Gain improves the generating efficiency at the cell piece back side, and the refractive index of SiNx passivating film is also by near Al2O3Passivation layer
What first layer gradually decreased outward, the advantage being arranged in this way is to improve the blunt of back surface by first layer high refractive index layer
Change effect, multi-layer film structure can increase absorption of the back surface to light again, short circuit current be improved, to improve battery back surface
Transfer efficiency.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the preparation step flow diagram of two-sided PERC cell piece in the preferred embodiment of the present invention 1.
Specific embodiment
In order that those skilled in the art will better understand the technical solution of the present invention, implement below in conjunction with the present invention
Attached drawing in example, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment
Only a part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work, all should belong to protection of the present invention
Range.
It should be noted that description and claims of this specification and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to the embodiment of the present invention described herein can in addition to illustrating herein or
Sequence other than those of description is implemented.In addition, term " includes " and " having " and their any deformation, it is intended that cover
Covering non-exclusive includes to be not necessarily limited to for example, containing the process, method of a series of steps or units, device, product or equipment
Step or unit those of is clearly listed, but may include be not clearly listed or for these process, methods, product
Or other step or units that equipment is intrinsic.
In following embodiment, used semiconductor substrate is silicon wafer, for common commercially available silicon wafer, is purchased from and assists prosperous new energy control
Stock Co., Ltd；Used depositing device model E2000HT 410-4 is purchased from Centrotherm.
Embodiment 1
Referring to Fig.1, a kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure of the present embodiment,
Specifically includes the following steps:
Step S1: prepare material
Prepare silicon wafer that is clean and having completed the techniques such as making herbs into wool, diffusion, etching.
Step S2: preparation back side Al2O3Passivation layer
Silicon wafer is put into depositing device, to the backside deposition Al of silicon wafer in deposit cavity2O3Passivation layer, depositing temperature are
200~300 DEG C, Al2O3The deposition thickness of passivation layer is 10~20nm.
Step S3: first layer SiNx passivating film is prepared
After step S2, temperature is risen to 400~600 DEG C, is passed through reaction gas SiH4And NH3, wherein gas flow
SiH4For 2000~3000sccm, NH3For 10500sccm~11500sccm, pressure 1800mtorr, radio-frequency power 5kW
~9kW deposits first layer SiNx passivating film on silicon wafer.First layer SiNx passivating film with a thickness of 20~50nm, refractive index n1
It is 2.2~2.3.MTorr is pressure unit, is the pressure of the micrometer of mercury, the i.e. one thousandth of millimetres of mercury pressure, 1mTorr etc.
In 0.133Pa.Slm and sccm is gas mass flow unit, sccm (standard cubic centimeter per
It minute) is the flow of (namely 1 atmospheric pressure, 25 DEG C at) 1 cubic centimetre (1mL/min) per minute under standard state.
Step S4: second layer SiNx passivating film is prepared
Continue to be passed through reaction gas SiH in deposit cavity after step (3)4And NH3, wherein gas flow SiH4For
1500~2500sccm, NH3For 11500sccm~12500sccm, pressure 1800mtorr, radio-frequency power is 5kW~9kW,
Second layer SiNx passivating film is deposited on silicon wafer.Second layer SiNx passivating film with a thickness of 20~50nm, refractive index n2 is 2.1~
2.2。
Step S5: preparation third layer SiNx passivating film
Continue to be passed through reaction gas SiH in deposit cavity after step (4)4And NH3, wherein gas flow SiH4For
600~1600sccm, NH3For 12000sccm~1300sccm, pressure 1800mtorr, radio-frequency power is 5kW~9kW,
Third layer SiNx passivating film is deposited on silicon wafer.Third layer SiNx passivating film with a thickness of 20~50nm, refractive index n3 is 2.0~
2.1。
Step S6: preparation front SiNx antireflective coating, local laser aperture, silk-screen printing and sintering
Silicon wafer after step S5 is carried out to prepare front side of silicon wafer SiNx antireflective coating, local laser aperture, screen printing
The PERC cell piece that the back side has three layers of silicon nitride passive film is prepared in the subsequent techniques such as brush and sintering.
In the present embodiment, the overall thickness of three layers of SiNx passivating film is 75-80nm, and total refractive index of three layers of SiNx passivating film is
2.10~2.13.And by first layer SiNx passivating film to third layer SiNx passivating film, SiH4Gas flow be gradually reduced, NH3's
Gas flow is gradually increased, and the refractive index of obtained SiNx passivating film is also to be gradually decreased by first layer to third layer, i.e., and
The refractive index of two layers of SiNx passivating film is less than the refractive index of first layer SiNx passivating film, the refractive index of third layer SiNx passivating film
Less than the refractive index of second layer SiNx passivating film, such advantage is to improve back surface by first layer high refractive index layer
Passivation effect, trilamellar membrane structure can increase absorption of the back surface to light again, short circuit current be improved, to improve battery back surface
Transfer efficiency.
Embodiment 2
A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure of the present embodiment, specifically includes
Following steps:
Step S1: prepare material
Prepare silicon wafer that is clean and having completed the techniques such as making herbs into wool, diffusion, etching.
Step S2: preparation back side Al2O3Passivation layer
Silicon wafer is put into depositing device, to the backside deposition Al of silicon wafer in deposit cavity2O3Passivation layer, depositing temperature are
200~300 DEG C, Al2O3The deposition thickness of passivation layer is 10~20nm.
Step S3: first layer SiNx passivating film is prepared
After step S2, temperature is risen to 400~600 DEG C, is passed through reaction gas SiH4And NH3, wherein gas flow
SiH4For 2000~3000sccm, NH3For 10500sccm~11500sccm, pressure 1800mtorr, radio-frequency power 5kW
~9kW deposits first layer SiNx passivating film on silicon wafer.First layer SiNx passivating film with a thickness of 20~50nm, refractive index n1
It is 2.2~2.3.MTorr is pressure unit, is the pressure of the micrometer of mercury, the i.e. one thousandth of millimetres of mercury pressure, 1mTorr etc.
In 0.133Pa.Slm and sccm is gas mass flow unit, sccm (standard cubic centimeter per
It minute) is the flow of (namely 1 atmospheric pressure, 25 DEG C at) 1 cubic centimetre (1mL/min) per minute under standard state.
Step S4: second layer SiNx passivating film is prepared
Continue to be passed through reaction gas SiH in deposit cavity after step (3)4And NH3, wherein gas flow SiH4For
1500~2000sccm, NH3For 11500sccm~12000sccm, pressure 1800mtorr, radio-frequency power is 5kW~9kW,
Second layer SiNx passivating film is deposited on silicon wafer.Second layer SiNx passivating film is 2.10 with a thickness of 20~50nm, refractive index n2
~2.15.
Step S5: preparation third layer SiNx passivating film
Continue to be passed through reaction gas SiH in deposit cavity after step (4)4And NH3Wherein gas flow SiH4For
2000~2500sccm, NH3For 12000sccm~12500sccm, pressure 1800mtorr, radio-frequency power is 5kW~9kW,
Third layer SiNx passivating film is deposited on silicon wafer.Third layer SiNx passivating film is 2.15 with a thickness of 20~50nm, refractive index n3
~2.20.
Step S6: the 4th layer of SiNx passivating film of preparation
Continue to be passed through reaction gas SiH in deposit cavity after step (4)4And NH3, wherein gas flow SiH4For
600~1600sccm, NH3For 12000sccm~1300sccm, pressure 1800mtorr, radio-frequency power is 5kW~9kW,
The 4th layer of SiNx passivating film is deposited on silicon wafer.4th layer of SiNx passivating film with a thickness of 20~50nm, refractive index n4 be 2.0~
2.1。
Step S7: preparation front SiNx antireflective coating, local laser aperture, silk-screen printing and sintering
Silicon wafer after step S5 is carried out to prepare front side of silicon wafer SiNx antireflective coating, local laser aperture, screen printing
The PERC cell piece that the back side has four layers of silicon nitride passive film is prepared in the subsequent techniques such as brush and sintering.
In the present embodiment, the overall thickness of four layers of SiNx passivating film is 75-80nm, and total refractive index of four layers of SiNx passivating film is
2.10~2.13.And by first layer SiNx passivating film to the 4th layer of SiNx passivating film, SiH4Gas flow be gradually reduced, NH3's
Gas flow is gradually increased, and the refractive index of obtained SiNx passivating film is also to be gradually decreased by first layer to the 4th layer, i.e., and
The refractive index of two layers of SiNx passivating film is less than the refractive index of first layer SiNx passivating film, and the refractive index of third layer SiNx passivating film is small
In the refractive index of second layer SiNx passivating film, the refractive index of the 4th layer of SiNx passivating film is less than the refraction of third layer SiNx passivating film
Rate, such advantage be to improve the passivation effect of back surface by first layer high refractive index layer, and four film structures again can be with
Increase absorption of the back surface to light, short circuit current is improved, to improve the transfer efficiency of battery back surface.
Comparative example 1
Single layer is carried out at the back side of silicon wafer using existing preparation process in deposition SiNx passivating film when preparing cell piece
The deposition of SiNx passivating film, other process flows and embodiment 1 or embodiment 2 are identical.
Comparative example 2
It deposits SiNx passivating film and the deposition of three layers of SiNx passivating film is carried out at the back side of silicon wafer using existing preparation process,
But the refractive index of the SiNx passivating film of its internal layer is less than the refractive index of the SiNx passivating film of outer layer, i.e. second layer SiNx passivating film
Refractive index be greater than the refractive index of first layer SiNx passivating film, the refractive index of third layer SiNx passivating film is greater than second layer SiNx
The refractive index of passivating film, other process flows and embodiment 1 or embodiment 2 are identical.
3 results and discussion of embodiment
The inspection that the cell piece that the traditional handicraft of the cell piece produced using embodiment and comparative example one is produced carries out
It surveys, the result is as follows:
1 test result of table
| Group | NCell (%) | Uoc(V) | Isc(A) |
| Comparative example 1 | 15.49 | 0.6551 | 7.233 |
| Comparative example 2 | 15.50 | 0.6550 | 7.236 |
| Embodiment 1 | 15.61 | 0.6554 | 7.287 |
| Embodiment 2 | 15.65 | 0.6554 | 7.305 |
Wherein, Uoc is open-circuit voltage, and Isc is short circuit current, and NCell is the efficiency of cell piece, and Uoc is the bigger the better, Isc
It is the bigger the better, the higher the better by NCell.From the electric performance test result of table 1 it follows that compared with comparative example 1, in embodiment 1
There is 0.12% promotion using the double-side cell back side efficiency of three layers of SiNx membrane structure, short circuit current has being obviously improved for 54mA,
Open-circuit voltage also has the promotion of 0.4mV；Have 0.15% using the double-side cell back side efficiency of four layers of SiNx membrane structure in embodiment 2
Promotion, short circuit current has being obviously improved for 69mA.The Al of embodiment 1 and embodiment 2 in silicon chip back side2O3It is arranged on passivation layer
Double-side cell is carried on the back in multilayer SiNx passivating film, the absorption for enabling final product that cell backside is effectively promoted to light
Face short circuit current has apparent gain, improves the generating efficiency at the cell piece back side, and the refractive index of SiNx passivating film is by most
Close to Al2O3What the first layer of passivation layer gradually decreased outward, the advantage being arranged in this way is through first layer high refractive index film
Layer improves the passivation effect of back surface, and multi-layer film structure can increase absorption of the back surface to light again, improves short circuit current, thus
Improve the transfer efficiency of battery back surface.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention, it is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure, which is characterized in that the preparation
Method the following steps are included: to monocrystalline silicon piece carry out cleaning and texturing after through diffuseing to form PN junction；By the silicon wafer with PN junction
Polished backside removes phosphorosilicate glass and etching edge；Later first in the backside deposition Al of silicon wafer2O3Passivation layer, then in Al2O3It is blunt
Change and deposit SiNx passivating film on layer, the SiNx passivating film is multilayered structure；In the front deposition SiNx antireflective film of the silicon wafer
Afterwards in the backside laser local openings of silicon wafer, and silk-screen printing, sintering；Close to the Al in multilayered structure SiNx passivating film2O3It is blunt
The refractive index for changing the SiNx passivating film of layer is higher than far from the Al2O3The refractive index of the SiNx passivating film of passivation layer.
2. a kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure according to claim 1,
It is characterized in that, the Al2O3The depositing temperature of passivation layer is 200 ~ 300 DEG C.
3. a kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure according to claim 1,
It is characterized in that, the Al2O3The deposition thickness of passivation layer is 10 ~ 20nm.
4. a kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure according to claim 1,
It is characterized in that, the depositing temperature of the SiNx passivating film is 400 ~ 600 DEG C.
5. a kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure according to claim 1,
It is characterized in that, the overall thickness of the SiNx passivating film of multilayered structure is 75 ~ 80nm, the SiNx passivating film of multilayered structure
Total refractive index be 2.10 ~ 2.13.
6. a kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure according to claim 1,
It is characterized in that, the SiNx passivating film is more than or equal to three layers.
7. a kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure according to claim 6,
It is characterized in that, the SiNx passivating film is three-decker.
8. a kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure according to claim 7,
It is characterized in that, the passivation film thickness of SiNx described in first layer is 20 ~ 50nm, refractive index n1 is 2.2 ~ 2.3, gas flow SiH4For
2000 ~ 3000sccm, NH3For 10500sccm ~ 11500sccm, pressure 1800mtorr, radio-frequency power is 5kW ~ 9kW.
9. a kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure according to claim 8,
It is characterized in that, the passivation film thickness of SiNx described in the second layer is 20 ~ 50nm, refractive index n2 is 2.1 ~ 2.2, gas flow SiH4For
1500 ~ 2500sccm, NH3For 11500sccm ~ 12500sccm, pressure 1800mtorr, radio-frequency power is 5kW ~ 9kW.
10. a kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure according to claim 9,
It is characterized in that, the passivation film thickness of SiNx described in third layer is 20 ~ 50nm, refractive index n3 is 2.0 ~ 2.1, gas flow SiH4For
600 ~ 1600sccm, NH3For 12000sccm ~ 13000sccm, pressure 1800mtorr, radio-frequency power is 5kW ~ 9kW.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811546717.0A CN109638110A (en) | 2018-12-18 | 2018-12-18 | A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811546717.0A CN109638110A (en) | 2018-12-18 | 2018-12-18 | A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109638110A true CN109638110A (en) | 2019-04-16 |
Family
ID=66074966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811546717.0A Pending CN109638110A (en) | 2018-12-18 | 2018-12-18 | A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109638110A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112635622A (en) * | 2020-12-25 | 2021-04-09 | 通威太阳能（成都）有限公司 | PERC double-sided battery back film optimization process |
| CN114038941A (en) * | 2021-11-05 | 2022-02-11 | 浙江晶科能源有限公司 | Solar cell preparation method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120012175A1 (en) * | 2010-07-19 | 2012-01-19 | Samsung Electronics Co., Ltd. | Solar cell and manufacturing method thereof |
| CN102903764A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof |
| CN105845775A (en) * | 2016-04-19 | 2016-08-10 | 晋能清洁能源科技有限公司 | Back multilayer coating method of PERC crystalline silicon solar cell |
| CN106449876A (en) * | 2016-10-17 | 2017-02-22 | 无锡尚德太阳能电力有限公司 | Producing method of selective emitter double-faced PERC crystalline silicon solar cell |
| CN107425080A (en) * | 2017-03-03 | 2017-12-01 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and its component, system and preparation method |
| CN206931606U (en) * | 2017-03-03 | 2018-01-26 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar batteries and its component, system |
| CN206947356U (en) * | 2017-03-03 | 2018-01-30 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar batteries and its component, system |
-
2018
- 2018-12-18 CN CN201811546717.0A patent/CN109638110A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120012175A1 (en) * | 2010-07-19 | 2012-01-19 | Samsung Electronics Co., Ltd. | Solar cell and manufacturing method thereof |
| CN102903764A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof |
| CN105845775A (en) * | 2016-04-19 | 2016-08-10 | 晋能清洁能源科技有限公司 | Back multilayer coating method of PERC crystalline silicon solar cell |
| CN106449876A (en) * | 2016-10-17 | 2017-02-22 | 无锡尚德太阳能电力有限公司 | Producing method of selective emitter double-faced PERC crystalline silicon solar cell |
| CN107425080A (en) * | 2017-03-03 | 2017-12-01 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and its component, system and preparation method |
| CN206931606U (en) * | 2017-03-03 | 2018-01-26 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar batteries and its component, system |
| CN206947356U (en) * | 2017-03-03 | 2018-01-30 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar batteries and its component, system |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112635622A (en) * | 2020-12-25 | 2021-04-09 | 通威太阳能（成都）有限公司 | PERC double-sided battery back film optimization process |
| CN114038941A (en) * | 2021-11-05 | 2022-02-11 | 浙江晶科能源有限公司 | Solar cell preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4540447B2 (en) | Solar cell and method for manufacturing solar cell | |
| JP7331232B2 (en) | SOLAR CELL AND MANUFACTURING METHOD THEREOF, SOLAR CELL MODULE | |
| CN109216509A (en) | A kind of interdigitation back contacts heterojunction solar battery preparation method | |
| CN107256894A (en) | Tubular type PERC one side solar cells and preparation method thereof and special equipment | |
| CN107887453A (en) | A kind of two-sided aluminum oxide p-type PERC solar cells and preparation method | |
| CN108231917B (en) | PERC solar cell and preparation method thereof | |
| CN101527326A (en) | Anti-reflecting film applied to metallurgical silicon solar cell and preparation method thereof | |
| WO2020082756A1 (en) | Perc battery back passivation structure and preparation method therefor | |
| CN110534590A (en) | A kind of silicon nitride film and preparation method thereof improving solar cell long-wave response | |
| CN107863420A (en) | The preparation technology of solar cell without etching processing | |
| CN109638110A (en) | A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure | |
| CN109244149A (en) | PECVD back film layer structure based on PERC single crystal battery and preparation method | |
| CN110444634B (en) | P-type single crystal PERC double-sided battery and manufacturing method thereof | |
| CN209056515U (en) | A kind of production line of crystal silicon solar batteries | |
| CN105489709B (en) | PERC solar cells and preparation method thereof | |
| JP2009049443A (en) | Solar battery and manufacturing method of same | |
| CN105470347A (en) | PERC (PowerEdge RAID Controller) battery manufacturing method | |
| CN109616556A (en) | A kind of annealing of silicon chip back side and the integrated method of front plated film and a kind of preparation method of cell piece | |
| CN107731951A (en) | A kind of preparation method of n p p+ structure batteries | |
| CN104091839A (en) | Antireflective film for solar cell piece and manufacturing method thereof | |
| CN102969390A (en) | Windowing process of solar crystalline silicon battery | |
| CN105529380A (en) | Preparation method for single crystalline silicon solar cell piece with polished back surface | |
| TWI783063B (en) | Manufacturing method of solar cell | |
| JP2002277605A (en) | Method for depositing antireflection film | |
| CN109360866A (en) | A kind of preparation method of three layers of silicon nitride film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190416 |