CN109616556A - A kind of annealing of silicon chip back side and the integrated method of front plated film and a kind of preparation method of cell piece - Google Patents
A kind of annealing of silicon chip back side and the integrated method of front plated film and a kind of preparation method of cell piece Download PDFInfo
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- CN109616556A CN109616556A CN201811546703.9A CN201811546703A CN109616556A CN 109616556 A CN109616556 A CN 109616556A CN 201811546703 A CN201811546703 A CN 201811546703A CN 109616556 A CN109616556 A CN 109616556A
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- back side
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- plated film
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- silicon chip
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 67
- 239000010703 silicon Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000000137 annealing Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims description 14
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 239000012495 reaction gas Substances 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims description 7
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 230000035484 reaction time Effects 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 10
- 238000002161 passivation Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 5
- 208000027418 Wounds and injury Diseases 0.000 abstract description 4
- 208000014674 injury Diseases 0.000 abstract description 4
- 230000035939 shock Effects 0.000 abstract description 3
- 230000003685 thermal hair damage Effects 0.000 abstract description 3
- 239000012634 fragment Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 206010061245 Internal injury Diseases 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of annealing of silicon chip back side and the integrated methods of front plated film, the following steps are included: carrying out laser slotting using the back side of the laser equipment to silicon wafer, silicon wafer after laser slotting is put into depositing device, reaction gas SiH is passed through in the deposit cavity of Xiang Suoshu depositing device4And NH3And N2It is deposited in the front plated film of silicon wafer.A kind of silicon chip back side annealing of the invention and the integrated method of front plated film, it is carried out before laser slotting is moved to front plated film, front plated film is also able to achieve while the high temperature oxygen-free environment progress back side annealing of PECVD is utilized to synchronously complete, and does not increase additional annealing operation；And bring thermal shock, thermal damage and lattice defect after back side high energy laser fluting are restored and repaired to this method, it further reduced the recombination rate of silicon wafer perished surface after laser, can also slot to the back side progress hydrogen passivation of (windowing) position, to improve the minority carrier life time for being excited light injury silicon wafer, solar battery efficiency is further increased.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, and in particular to a kind of annealing of silicon chip back side and front plated film one
The method of body and include the integral method a kind of cell piece preparation method.
Background technique
With the continuous development of photovoltaic technology, crystal silicon solar batteries as with it is a kind of convert solar energy into electrical energy it is clear
Clean energy products are grown rapidly.
Crystal silicon solar batteries efficiency can be continuously improved in the matching optimization of passivation and contact, and Al-BSF is connect by entire aluminium silicon
Touching develops to now widely used PERC locally passivation aluminium silicon contact, reduces the recombination rate of silicon chip back side, reduces few
Son is compound to improve battery efficiency.But the fluting (windowing) of part passivation contact is mainly the laser bombardment by high-energy
Silicon chip back side passivating film, this can bring serious laser thermal shock and damage to silicon chip back side, destroy the lattice structure of silicon substrate
It concentrates with stress and increases so as to cause battery efficiency loss and crack fragment.
Summary of the invention
In view of this, in order to overcome the drawbacks of the prior art, the object of the present invention is to provide a kind of annealing of silicon chip back side and
The integrated method of front plated film, backside laser thermal damage and lattice defect can be restored and be repaired to this method, and improve the sun
Battery efficiency and cell piece fragment rate can be reduced, while processing step can also be optimized with the integration of front plated film.
In order to achieve the above object, the following technical solution is employed by the present invention:
A kind of annealing of silicon chip back side and the integrated method of front plated film, comprising the following steps: using laser equipment to silicon
The back side of piece carries out laser slotting, the silicon wafer after laser slotting is put into depositing device, the deposit cavity of Xiang Suoshu depositing device
In be passed through reaction gas SiH4And NH3And N2It is deposited in the front plated film of silicon wafer.
Preferably, the silicon wafer has carried out over cleaning making herbs into wool, back side plating passivating film and protective film.
Preferably, the laser parameter in the laser slotting are as follows: laser percentage is 50-100%, laser frequency 200-
1000kHz。
It is further preferred that the laser parameter in the laser slotting are as follows: laser percentage 100%, laser frequency are
800kHz。
Preferably, the back side of silicon wafer described in two panels is affixed when silicon wafer being put into depositing device and is fixed on graphite boat card slot
In, it is then placed in the depositing device.
It is further preferred that the distance between adjacent described back side of silicon wafer is less than between the front of the adjacent silicon wafer
Distance.
Preferably, the deposition process is to carry out under anaerobic low pressure and high temperature.
It is further preferred that the sedimentary condition are as follows: depositing temperature is 300-500 DEG C, reaction time 30-50min, pressure
It is by force 1000-3000mTorr.MTorr is pressure unit, is the pressure of the micrometer of mercury, i.e. the one thousandth of millimetres of mercury pressure,
1mTorr is equal to 0.133Pa.
It is further preferred that the sedimentary condition are as follows: depositing temperature is 400 DEG C, reaction time 40min, and pressure is
2000mTorr。
The present invention also provides a kind of preparation method of cell piece, the preparation method includes silicon chip back side as described above
Annealing and the integrated method of front plated film.
Specifically, the preparation method includes carrying out backside laser after carrying out making herbs into wool cleaning, back side coating film after preparing silicon wafer
Fluting carries out back side annealing and front plated film in depositing device later, finally carries out silk-screen printing and sintering.
Compared with prior art, the invention has the beneficial effects that: the of the invention a kind of annealing of silicon chip back side and front plating
The integrated method of film, this method are made that adjustment to traditional cell piece preparation process flow, laser slotting are moved to front
It is carried out before plated film, it is same to be also able to achieve front plated film while the high temperature oxygen-free environment progress back side annealing of PECVD is utilized
Step is completed, and additional annealing operation is not increased；And bring after back side high energy laser fluting is restored and repaired to this method
Thermal shock, thermal damage and lattice defect.It further reduced the recombination rate of silicon wafer perished surface after laser, while can also be to back
Face fluting (windowing) position carries out hydrogen passivation, to improve the minority carrier life time for being excited light injury silicon wafer, further increases solar energy
Battery efficiency and reduce cell piece fragment rate.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the preparation step flow diagram of cell piece in the traditional handicraft of comparative example 1；
Fig. 2 is the preparation step flow diagram of cell piece in the preferred embodiment of the present invention 1；
Fig. 3 is that silicon wafer is inserted in the schematic diagram in graphite boat in the preferred embodiment of the present invention 1.
Specific embodiment
In order that those skilled in the art will better understand the technical solution of the present invention, implement below in conjunction with the present invention
Attached drawing in example, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment
Only a part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work, all should belong to protection of the present invention
Range.
It should be noted that description and claims of this specification and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to the embodiment of the present invention described herein can in addition to illustrating herein or
Sequence other than those of description is implemented.In addition, term " includes " and " having " and their any deformation, it is intended that cover
Covering non-exclusive includes to be not necessarily limited to for example, containing the process, method of a series of steps or units, device, product or equipment
Step or unit those of is clearly listed, but may include be not clearly listed or for these process, methods, product
Or other step or units that equipment is intrinsic.
In following embodiment, used silicon wafer can be single polysilicon chip, be purchased from CMC Magnetics Corporation；It is used
Laser slotting device model is DR-Al-Y100, is purchased from Wuhan DR Laser Technology Co., Ltd.；Depositing device model
E2000HT 410-4 is purchased from Centrotherm；The instrument for detecting the few son of silicon wafer is WCT120 minority carrier lifetime tester；Battery
Efficiency test is Halm efficiency test (minority carrier life time is got higher, and battery efficiency is better).
Embodiment 1
Referring to Fig. 2 to 3, a kind of preparation method of cell piece of the present embodiment, comprising the following steps:
Step S1: prepare material
The single polysilicon chip for preparing appropriate resistance rate carries out making herbs into wool cleaning, back side coating film etc. by battery process.
Step S2: backside laser fluting
Silicon wafer in step S1 after the techniques such as making herbs into wool cleaning, back side coating film is put into laser equipment, is joined in laser
Laser percentage 100%, laser frequency 800kHz are set in number, and laser graphics are regular hexagon symmetric graph of the phase from point 500um
Shape, laser dotting dimension of picture 155*155mm after suitable laser parameter is arranged, start the laser beam bombardment silicon with high-energy
Piece back side film layer forms back side fluting (windowing) effect on removal film layer and molten silicon surface layer.
In other some embodiments, the range of laser percentage can be 50-100%, and the range of laser frequency can be
200-1000kHz。
Step S3: back side annealing+front plated film
The back side slots after step S2, and the silicon wafer form as shown in Figure 3 after (windowing) is back-to-back to be inserted into graphite
In boat, the graphite boat for being plugged piece is put into PECVD filming equipment.Silicon wafer after will slotting is in PECVD device with back-to-back
Mode carry out inserted sheet, the distance between back side of adjacent silicon wafer is less than the distance between the front of adjacent silicon wafer, and two panels silicon
The back side of piece inwardly, is just faced outwardly for front plated film.
Deposition process is to carry out under anaerobic low pressure and high temperature.Specifically, being passed through reaction gas SiH in deposit cavity4、
NH3And N2, wherein SiH4Gas flow be 3-9slm, NH3Gas flow be 700-1900sccm, N2Gas flow be
7-10sccm.Pressure is 2000mTorr, and reaction temperature is 450 DEG C, soaking time 30min.
By front side of silicon wafer formed silicon nitride film when the back side also made annealing treatment, repaired back side fluting and (opened
Window) laser bring is damaged and lattice defect, and back side annealing and the integration of front plated film are ultimately formed, further reduced laser
The recombination rate of silicon wafer perished surface afterwards, while (windowing) position that can also slot to the back side carries out hydrogen passivation, is excited to improve
The minority carrier life time of light injury silicon wafer, further increases solar battery efficiency.
Laser slotting can repair the internal injury of silicon wafer by high annealing, and the damage on silicon wafer surface layer is to pass through
The hydrogen that reaction gas generates when reacting realizes reparation.
In other some embodiments, the range of depositing temperature can be 300-500 DEG C, and the range in reaction time can be
30-50min, the range of pressure can be 1000-3000mTorr.
Step S4: silk-screen sintering
Silicon wafer after step S3 is subjected to silk-screen printing and sintering, obtains cell piece.
I.e. in the present embodiment in silicon chip back side plated film and after carrying out laser slotting, high temperature anaerobic is completed in PECVD boiler tube
Under the conditions of keep certain time to repair backside laser damage, and synchronously complete front side of silicon wafer plated film, simplify flow process,
And the minority carrier life time for being excited light injury silicon wafer is improved, further increase solar battery efficiency.
Comparative example 1
Referring to Fig.1, the cell piece in this comparative example is prepared according to the conventional method, i.e., according to silicon chip cleaning and texturing,
It is made after back side coating film, front plated film, backside laser fluting and silk-screen printing and sintering.
2 results and discussion of embodiment
The inspection that the cell piece that the traditional handicraft of the cell piece produced using embodiment 1 and comparative example 1 is produced carries out
It surveying, wherein Eta is transformation efficiency, and Uoc is open-circuit voltage, and Isc is short circuit current, and FF is fill factor, and Rs is series resistance,
Rsh is parallel resistance, and IRev2 is reverse current, and Breakage is silk-screen fragment rate, the result is as follows:
1 test result of table
Back side annealing and front plated film are combined with integration in embodiment 1, lattice defect and thermal stress are repaired by annealing
Damage improves battery efficiency and reduces crack fragment.From the electric performance test result of table 1 it follows that cell light in embodiment 1
From the improvement of Uoc, main cause is reparation lattice damage and hydrogen passivation after damage from laser annealing for the gain of photoelectric transformation efficiency
Surface defect reduces surface recombination and bluk recombination, to improve photoelectric conversion efficiency and reduce cell piece fragment rate.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention, it is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of silicon chip back side annealing and the integrated method of front plated film, which comprises the following steps: utilize laser
Equipment carries out laser slotting to the back side of silicon wafer, the silicon wafer after laser slotting is put into depositing device, Xiang Suoshu depositing device
Deposit cavity in be passed through reaction gas SiH4And NH3And N2It is deposited.
2. a kind of silicon chip back side annealing according to claim 1 and the integrated method of front plated film, which is characterized in that institute
It states silicon wafer and has carried out over cleaning making herbs into wool, back side plating passivating film and protective film.
3. a kind of silicon chip back side annealing according to claim 1 and the integrated method of front plated film, which is characterized in that institute
State the laser parameter in laser slotting are as follows: laser percentage is 50-100%, laser frequency 200-1000kHz.
4. a kind of silicon chip back side annealing according to claim 3 and the integrated method of front plated film, which is characterized in that institute
State the laser parameter in laser slotting are as follows: laser percentage 100%, laser frequency 800kHz.
5. a kind of silicon chip back side annealing according to claim 1 and the integrated method of front plated film, which is characterized in that will
The back side of two panels silicon wafer is affixed when silicon wafer is put into depositing device and is fixed in the adjacent card slot of graphite boat, is then placed in described
In depositing device.
6. a kind of silicon chip back side annealing according to claim 1 and the integrated method of front plated film, which is characterized in that institute
Stating deposition process is to carry out under anaerobic low pressure and high temperature.
7. a kind of silicon chip back side annealing according to claim 6 and the integrated method of front plated film, which is characterized in that institute
State sedimentary condition are as follows: depositing temperature is 300-500 DEG C, reaction time 30-50min, pressure 1000-3000mTorr.
8. a kind of silicon chip back side annealing according to claim 7 and the integrated method of front plated film, which is characterized in that institute
State sedimentary condition are as follows: depositing temperature is 400 DEG C, reaction time 40min, pressure 2000mTorr.
9. a kind of preparation method of cell piece, which is characterized in that the preparation method includes such as claim 1-8 any one institute
The silicon chip back side annealing stated and the integrated method of front plated film.
10. a kind of preparation method of cell piece according to claim 9, which is characterized in that the preparation method includes standard
Backside laser fluting is carried out after carrying out making herbs into wool cleaning, back side coating film after standby silicon wafer, carries out back side annealing in depositing device later
With front plated film, silk-screen printing and sintering are finally carried out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811546703.9A CN109616556A (en) | 2018-12-18 | 2018-12-18 | A kind of annealing of silicon chip back side and the integrated method of front plated film and a kind of preparation method of cell piece |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811546703.9A CN109616556A (en) | 2018-12-18 | 2018-12-18 | A kind of annealing of silicon chip back side and the integrated method of front plated film and a kind of preparation method of cell piece |
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| CN110676349A (en) * | 2019-10-10 | 2020-01-10 | 浙江晶科能源有限公司 | Preparation method of electroplated metallization electrode |
| CN110739366A (en) * | 2019-10-16 | 2020-01-31 | 浙江爱旭太阳能科技有限公司 | method for repairing PERC solar cell back film laser grooving damage |
| CN113913788A (en) * | 2021-08-25 | 2022-01-11 | 浙江爱旭太阳能科技有限公司 | Front and back surface coating equipment and method for industrial production |
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| CN113913788A (en) * | 2021-08-25 | 2022-01-11 | 浙江爱旭太阳能科技有限公司 | Front and back surface coating equipment and method for industrial production |
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Application publication date: 20190412 |