CN103489929A - Light trapping structure on silicon substrate surface, preparation method and application thereof - Google Patents
Light trapping structure on silicon substrate surface, preparation method and application thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 111
- 239000010703 silicon Substances 0.000 title claims abstract description 111
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 43
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 39
- 238000000151 deposition Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000004115 Sodium Silicate Substances 0.000 claims abstract description 7
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052911 sodium silicate Inorganic materials 0.000 claims abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 3
- 238000001579 optical reflectometry Methods 0.000 claims abstract description 3
- 210000002268 wool Anatomy 0.000 claims description 23
- 235000008216 herbs Nutrition 0.000 claims description 22
- 239000008367 deionised water Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 11
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000004062 sedimentation Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 2
- 235000019795 sodium metasilicate Nutrition 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 abstract description 3
- 238000009499 grossing Methods 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 22
- 239000011787 zinc oxide Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H01—ELECTRIC ELEMENTS
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- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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Abstract
The invention relates to a light trapping structure on a silicon substrate surface, which is composed of a texturized monocrystalline silicon layer on the silicon substrate surface and a nano-size small pyramidal ZnO layer on texturized big pyramids, wherein the thickness of the ZnO layer is 300-1000nm, and the average light reflectivity of the light trapping structure for 400-1100nm wavelength is less than 10%. The preparation method comprises the following steps: texturizing on the silicon substrate surface by using sodium hydroxide, isopropanol and sodium silicate, carrying out smoothing treatment by using a mixed solution of hydrofluoric acid, nitric acid and acetic acid, and finally, depositing the nano-size pyramids on the texturized silicon chip by using an MOCVD (metal-organic chemical vapor deposition) technique. The light trapping structure can be used for a HIT cell using monocrystalline silicon as the substrate. The light trapping structure can lower the reflection of the texturized silicon substrate surface etched by a wet process, is used for a silicon geterojunction cell using monocrystalline silicon as the substrate, and can enhance the visible light absorption and utilization of the solar cell.
Description
Technical field
The invention belongs to the technology of preparing of solar cell, light trapping structure of especially a kind of surface of silicon and its preparation method and application.
Background technology
People are to the existing quite long history of the research of solar cell, within 1839, Becquerel has found photovoltaic effect, through the theoretical researches of more than 100 years and experiment, the people such as Chapin of U.S.'s Bell Laboratory in 1954 have produced first single crystal silicon solar cell, after this, to amorphous (crystallite) silicon-film solar-cell, cadmium-Te solar battery (CdTe), the research of the other materials solar cells such as CIGS solar cell (CIGS) also constantly launches, but, the still crystal-silicon solar cell that photovoltaic generation is mainly applied at present, due to it, to possess efficiency high simultaneously, stable performance, material is abundant, the advantages such as nonhazardous, still occupy main flow in photovoltaic of today market.
From the trend of solar cell application development, be mainly to raise the efficiency and reduce costs.The monocrystalline silicon battery photoelectric conversion efficiency has reached 25%, but is subject to material purity and preparation technology's restriction, is difficult to improve its conversion efficiency again or reduce costs; Although and the amorphous silicon membrane solar cell can large tracts of land production, cost is cheap again, its conversion efficiency is still lower, and the existence of light-induced degradation (Staebler-Wronski) effect has affected the stability of battery.
In order to reduce costs the conversion efficiency that keeps high simultaneously, adopting amorphous silicon/crystalline silicon heterojunction structure is good selection, this battery adopts the hydrogenation non crystal silicon film of broad-band gap as Window layer or emitter, monocrystalline silicon, polysilicon chip are as substrate, Sanyo company proposes to insert the intrinsic amorphous silicon film first between substrate and emitter, this is with the heterojunction solar cell of intrinsic thin layer, being HIT(Heterojunction with Intrinsic Thin-Layer) battery combines the characteristics of crystalline silicon and amorphous silicon battery, is subject to people's extensive concern.
In order further to reduce costs, the silicon wafer thickness that the HIT solar cell adopts, in continuous attenuation, adds that the silicon chip surface reflectivity is larger, causes the sunlight that incides silicon chip surface to be reflected greatly, has increased the loss of incident light.Emission layer and passivation layer due to the HIT solar cell all adopts the amorphous silicon material that visible light wave range is had to strong absorption simultaneously, so the short-circuit current density of HIT battery still is less than traditional single crystal silicon solar cell at present.For realize the effective absorption to incident light on thinner silicon chip, improve the short circuit current of battery, just must carry out effective light regime to it.The silicon substrate of suede structure, for the HIT solar cell, can be strengthened to the efficiency of light absorption of battery, improve battery performance.
The acquisition of traditional HIT silicon substrate suede degree is at first to carry out RCA[SC1:H
2o:NH
3h
2o(concentration is 25wt%): H
2o
2volume ratio is 5:1:1; SC2:H
2o:HCl:H
2o
2volume ratio is 6:1:1] technique cleans, and then applies the NaOH/IPA(isopropyl alcohol) technology carries out making herbs into wool, prepare be evenly distributed, pattern steerable pyramid light trapping structure.But the restriction due to the material behavior of silicon substrate own and corresponding chemical wet corrosion technique, the pyramidal size of preparing is usually in 10 μ m left and right, the reflection of average integral after total silicon wafer wool making is usually in 10% left and right, has nearly 10% light be reflected and do not absorbed by solar cell.
Summary of the invention
The objective of the invention is for overcoming the above-mentioned deficiency of prior art, light trapping structure of a kind of surface of silicon and its preparation method and application is provided, the zinc oxide transparent conductive film that adopts metal organic chemical vapor deposition (MOCVD) preparation to there is the pyramidion structure of nano-grade size, can reduce the reflection of wet etching suede degree surface of silicon, for take silicon heterogenous (HIT) battery that monocrystalline silicon is substrate, can increase absorption and the utilization of solar cell to visible ray.
Technical scheme of the present invention:
A kind of light trapping structure of surface of silicon, by forming through the monocrystalline silicon layer of making herbs into wool and the pyramidion pattern ZnO layer of the nano-grade size on the Great Pyramid in making herbs into wool in surface of silicon, the thickness of ZnO layer is 300-1000nm, and light trapping structure is less than 10% to the average light reflectivity of 400-1100nm wavelength.
A kind of preparation method of light trapping structure of described surface of silicon, at first in surface of silicon, utilize NaOH, isopropyl alcohol (IPA) and sodium metasilicate to carry out making herbs into wool, then with carrying out level and smooth (smooth) in the mixed liquor of hydrofluoric acid, nitric acid and acetic acid, finally utilize MOCVD technique to have the pyramid of nano-grade size in making herbs into wool silicon chip deposition, step is as follows:
1) by silicon chip respectively with ethanol, acetone ultrasonic cleaning 5min to remove surperficial organic substance;
2) cleaned silicon chip is positioned in the NaOH solution that concentration is 10wt %, is heated to 80 ℃, stirring reaction 20min, to remove surperficial damage layer;
3) above-mentioned silicon chip being placed in to sodium hydroxide solution that concentration is 1 wt %, isopropyl alcohol (IPA) solution that concentration is 6 v %, sodium silicate solution that concentration is 1 wt % and the mixed liquor of deionized water, is that under 80 ℃, reaction 40min carries out making herbs into wool in temperature;
4) silicon chip after making herbs into wool is placed in to SC1 solution, in temperature, be to react 15min under 80 ℃, washed with de-ionized water 2min will be used after silicon chip extracting, then silicon chip is placed in to SC2 solution, in temperature, be to react 15min under 80 ℃, washed with de-ionized water 2min will be used, to remove the reaction solution of silicon chip surface after silicon chip extracting;
5) mixed liquor that above-mentioned silicon chip is placed in to the acetum that etching acid solution that concentration is 40wt%, salpeter solution that concentration is 70 wt % and concentration are 99.5 wt % carries out the smooth processing, in mixed liquor, the volume ratio of etching acid solution, salpeter solution and acetum is 1:3:3, the silicon chip of handling well is placed in to deionized water and preserves;
6) above-mentioned silicon chip is placed in to the settling chamber of metal organic chemical vapor deposition (MOCVD) device, depositing temperature is 160-200 ℃, and steam rates is 80-120sccm, and diethyl zinc (DEZn) flow is 150-200sccm, B
2h
6flow is 0-5sccm, and deposition pressure is 0.5-2.0Torr, and sedimentation time is 5-20min, and the ZnO layer thickness is 300-1000nm, can make the light trapping structure of surface of silicon.
Described silicon substrate is N-type or P type silicon chip, and its resistance is 0.1-10 Ω.
In described mixed liquor, the amount ratio of sodium hydroxide solution, isopropyl alcohol (IPA) solution, sodium silicate solution and deionized water is 74g:444ml:74g:6000ml.
Described SC1 solution is H
2ammoniacal liquor and H that O, concentration are 25wt%
2o
2mixed liquor, H
2o, ammoniacal liquor and H
2o
2volume ratio be 5:1:1; SC2 solution is H
2o, analyze pure HCl and H
2o
2mixed liquor, H
2o, HCl and H
2o
2volume ratio be 6:1:1.
A kind of application of light trapping structure of described surface of silicon, for take silicon heterogenous (HIT) battery that monocrystalline silicon is substrate, can reduce silicon solar cell to reflection of light.
Advantage of the present invention and good effect:
The present invention adopts metal organic chemical vapor deposition (MOCVD) preparation to have the zinc oxide transparent conductive film of the pyramidion light trapping structure of nano-grade size, can reduce the reflection of wet etching suede degree surface of silicon, for take silicon heterogenous (HIT) battery that monocrystalline silicon is substrate, can increase absorption and the utilization of solar cell to visible ray.
The accompanying drawing explanation
The surface topography that Fig. 1 is silicon substrate after the making herbs into wool of conventional wet chemistry.
The surface topography that Fig. 2 is the standby suede degree silicon substrate of patent system of the present invention.
The integrated reflection test curve that Fig. 3 is tradition silicon substrate and the standby suede degree silicon substrate of patent system of the present invention after wet chemistry making herbs into wool relatively.
Embodiment
embodiment 1:
A kind of preparation method of light trapping structure of surface of silicon, at first utilize NaOH, IPA and NaSiO
3carry out making herbs into wool, then with reagent such as hydrofluoric acid, carry out smoothing processing, the pyramid that finally utilizes MOCVD technique to there is the nano-scale level in making herbs into wool silicon chip deposition, the light trapping structure of the surface of silicon that is improved, step is as follows:
1) silicon chip is positioned over to each ultrasonic 5min in ethanol/acetone, purpose is to remove organic substance;
2) cleaned silicon chip is positioned in sodium hydroxide solution, and this solution is heated to 80 ℃, reaction 20min, purpose is to remove the damage layer;
3) above-mentioned silicon chip is placed in to the NaOH that the 74g mass percent concentration is 1%, the isopropyl alcohol that the 444ml concentration of volume percent is 6%, the NaSiO that the 74g mass percent concentration is 1%
3in the mixed liquor of deionized water, add the 6000ml deionized water, temperature is heated to 80 ℃, and reaction 40min carries out making herbs into wool;
4) silicon chip of making herbs into wool is placed in to H
2ammoniacal liquor and H that O, concentration are 25wt%
2o
2the volume ratio SC1 mixed solution that is 5:1:1 in, heating-up temperature is 80 ℃, the reaction time is 15min, uses washed with de-ionized water 2min after silicon chip extracting, and the silicon chip of cleaning is placed in to H
2o, analyze pure HCl and H
2o
2the volume ratio SC2 mixed solution that is 6:1:1 in, heating-up temperature is 80 ℃, reaction 15min, use washed with de-ionized water 2min after silicon chip extracting, with the reactant liquor of removal silicon chip surface;
5) mixed liquor that above-mentioned silicon chip is placed in to the acetum that etching acid solution that concentration is 40wt%, salpeter solution that concentration is 70 wt % and concentration are 99.5 wt % carries out smoothly (smooth) to be processed, in mixed liquor, the volume ratio of etching acid solution, salpeter solution and acetum is 1:3:3, the silicon chip of handling well is placed in to deionized water and preserves;
6) silicon chip of processing is placed in to the settling chamber of MOCVD, depositing temperature is 177 ℃, and steam rates is 110sccm, and the DEZn flow is 180sccm, B
2h
6flow is 0sccm, and deposition pressure is 1Torr, and sedimentation time is 5min, and the ZnO layer thickness is 300nm, can make the light trapping structure that improves surface of silicon.
Fig. 1, Fig. 2 are respectively and adopt conventional wet and mocvd method of the present invention to prepare the silicon substrate shape appearance figure that improves sunken light on the making herbs into wool silicon chip, in figure, show: the pyramidion prepared by MOCVD of having grown on the Great Pyramid of making herbs into wool silicon chip.
Fig. 3 for adopt MOCVD prepare on the making herbs into wool silicon chip to improve fall into light silicon substrate integrated reflection test curve relatively, in figure, show: this light trapping structure near 5%, has good sunken light effect at the light average reflectance at 400-1100nm place.
embodiment 2:
A kind of preparation method of light trapping structure of surface of silicon, step 1)-5) identical with embodiment 1, difference is step 6):
6) silicon chip of Smooth being processed is placed in the settling chamber of MOCVD, and depositing temperature is 170 ℃, and steam rates is 110sccm, and the DEZn flow is 180sccm, B
2h
6flow is 3sccm, and deposition pressure is 1Torr, and sedimentation time is 5min, and the ZnO layer thickness is 300nm, can make the light trapping structure that improves surface of silicon.
This light trapping structure technique effect and embodiment 1 are roughly the same.
embodiment 3:
A kind of preparation method of light trapping structure of surface of silicon, step 1)-5) identical with embodiment 1, difference is step 6):
6) silicon chip of processing is placed in to the settling chamber of MOCVD, depositing temperature is 177 ℃, H
2the O steam flow is 130sccm, and the DEZn flow is 180sccm, B
2h
6flow is 0sccm, and deposition pressure is 0.8Torr, and sedimentation time is 15min, and the ZnO layer thickness is 900nm, can make the light trapping structure that improves surface of silicon.
This light trapping structure technique effect and embodiment 1 are roughly the same.
embodiment 4:
A kind of preparation method of light trapping structure of surface of silicon, step 1)-5) identical with embodiment 1, difference is step 6):
6) silicon chip of processing is placed in to the settling chamber of MOCVD, depositing temperature is 177 ℃, H
2the O steam flow is 110sccm, and the DEZn flow is 200sccm, B
2h
6flow is 2sccm, and deposition pressure is 1.2Torr, and sedimentation time is 5min, and the ZnO layer thickness is 300nm, can make the light trapping structure that improves surface of silicon.
This light trapping structure technique effect and embodiment 1 are roughly the same.
embodiment 5:
A kind of preparation method's step 1)-5 of light trapping structure of surface of silicon) identical with embodiment 1, difference is step 6):
6) treated silicon chip is placed in to the settling chamber of MOCVD, depositing temperature is 177 ℃, H
2the O steam flow is 110sccm, and the DEZn flow is 180sccm, B
2h
6flow is 3sccm, and deposition pressure is 1Torr, and sedimentation time is 8min, and the ZnO layer thickness is 600nm, can make the light trapping structure that improves surface of silicon.
This light trapping structure technique effect and embodiment 1 are roughly the same.
embodiment 6:
A kind of preparation method of light trapping structure of surface of silicon, step 1)-5) identical with embodiment 1, difference is step 6):
6) treated silicon chip is placed in to the settling chamber of MOCVD, depositing temperature is 177 ℃, H
2the O steam flow is 110sccm, and the DEZn flow is 180sccm, B
2h
6flow is 3sccm, and deposition pressure is 1.1Torr, and sedimentation time is 5min, and the ZnO layer thickness is 400nm, can make the light trapping structure that improves surface of silicon.
This light trapping structure technique effect and embodiment 1 are roughly the same.
In sum, the invention provides a kind of effective ways that surface of silicon falls into light effect that improve, technology for preparing electrode compatibility fully before the method and traditional silicon-base thin-film battery, and generally be applicable to silica-based solar cell.
The above; be only the present invention's embodiment preferably, but protection scope of the present invention is not limited to this, anyly is familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (6)
1. the light trapping structure of a surface of silicon, it is characterized in that: by forming through the monocrystalline silicon layer of making herbs into wool and the pyramidion pattern ZnO layer of the nano-grade size on the Great Pyramid in making herbs into wool in surface of silicon, the thickness of ZnO layer is 300-1000nm, and light trapping structure is less than 10% to the average light reflectivity of 400-1100nm wavelength.
2. the preparation method of the light trapping structure of surface of silicon as claimed in claim 1, it is characterized in that: at first in surface of silicon, utilize NaOH, isopropyl alcohol and sodium metasilicate to carry out making herbs into wool, then level and smooth with carrying out in the mixed liquor of hydrofluoric acid, nitric acid and acetic acid, finally utilize MOCVD technique to have the pyramid of nano-grade size in making herbs into wool silicon chip deposition, step is as follows:
1) by silicon chip respectively with ethanol, acetone ultrasonic cleaning 5min to remove surperficial organic substance;
2) cleaned silicon chip is positioned in the NaOH solution that concentration is 10wt %, is heated to 80 ℃, stirring reaction 20min, to remove surperficial damage layer;
3) above-mentioned silicon chip being placed in to sodium silicate solution that sodium hydroxide solution that concentration is 1 wt %, aqueous isopropanol that concentration is 6 v % and concentration are 1 wt % and the mixed liquor of deionized water, is that under 80 ℃, reaction 40min carries out making herbs into wool in temperature;
4) silicon chip after making herbs into wool is placed in to SC1 solution, in temperature, be to react 15min under 80 ℃, washed with de-ionized water 2min will be used after silicon chip extracting, then silicon chip is placed in to SC2 solution, in temperature, be to react 15min under 80 ℃, washed with de-ionized water 2min will be used, to remove the reaction solution of silicon chip surface after silicon chip extracting;
5) mixed liquor that above-mentioned silicon chip is placed in to the acetum that etching acid solution that concentration is 40wt%, salpeter solution that concentration is 70 wt % and concentration are 99.5 wt % carries out the smooth processing, in mixed liquor, the volume ratio of etching acid solution, salpeter solution and acetum is 1:3:3, the silicon chip of handling well is placed in to deionized water and preserves;
6) above-mentioned silicon chip is placed in to the settling chamber of metal organic chemical vapor deposition (MOCVD) device, depositing temperature is 160-200 ℃, and steam rates is 80-120sccm, and diethyl zinc (DEZn) flow is 150-200sccm, B
2h
6flow is 0-5sccm, and deposition pressure is 0.5-2.0Torr, and sedimentation time is 5-20min, and the ZnO layer thickness is 300-1000nm, can make the light trapping structure of surface of silicon.
3. the preparation method of the light trapping structure of surface of silicon according to claim 2, it is characterized in that: described silicon substrate is N-type or P type silicon chip, and its resistance is 0.1-10 Ω.
4. the preparation method of the light trapping structure of surface of silicon according to claim 2, it is characterized in that: in described mixed liquor, the amount ratio of sodium hydroxide solution, isopropyl alcohol (IPA) solution, sodium silicate solution and deionized water is 74g:444ml:74g:6000ml.
5. the preparation method of the light trapping structure of surface of silicon according to claim 2, it is characterized in that: described SC1 solution is H
2ammoniacal liquor and H that O, concentration are 25wt%
2o
2mixed liquor, H
2o, ammoniacal liquor and H
2o
2volume ratio be 5:1:1; SC2 solution is H
2o, analyze pure HCl and H
2o
2mixed liquor, H
2o, HCl and H
2o
2volume ratio be 6:1:1.
6. the application of the light trapping structure of surface of silicon as claimed in claim 1 is characterized in that: for take silicon heterogenous (HIT) battery that monocrystalline silicon is substrate, can reduce silicon solar cell to reflection of light.
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