CN114678448A - Crystalline silicon inverted pyramid structure wet-process texturing method - Google Patents
Crystalline silicon inverted pyramid structure wet-process texturing method Download PDFInfo
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- CN114678448A CN114678448A CN202210322305.9A CN202210322305A CN114678448A CN 114678448 A CN114678448 A CN 114678448A CN 202210322305 A CN202210322305 A CN 202210322305A CN 114678448 A CN114678448 A CN 114678448A
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000004115 Sodium Silicate Substances 0.000 claims abstract description 33
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052911 sodium silicate Inorganic materials 0.000 claims abstract description 33
- 239000011259 mixed solution Substances 0.000 claims abstract description 29
- 239000008367 deionised water Substances 0.000 claims abstract description 26
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims abstract description 18
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000243 solution Substances 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 23
- -1 polytetrafluoroethylene Polymers 0.000 description 23
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 23
- 239000004810 polytetrafluoroethylene Substances 0.000 description 23
- 239000002923 metal particle Substances 0.000 description 13
- 238000002791 soaking Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 241001424392 Lucia limbaria Species 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
Abstract
The invention discloses a crystalline silicon inverted pyramid structure wet-process texturing method, relates to the technical field of new materials and solar energy, and particularly relates to a crystalline silicon inverted pyramid structure wet-process texturing method which comprises the following steps: putting a crystal silicon wafer with a clean surface into a container containing a mixed solution of sodium silicate and hydrofluoric acid, reacting at 80 ℃ for 120-140min to corrode the surface of the silicon wafer to form a large-area micro-nano inverted pyramid suede, and then putting the corroded silicon wafer into a deionized water solution to soak the silicon wafer to remove the residual hydrofluoric acid on the surface; a wet-method texturing method for a crystalline silicon inverted pyramid structure further comprises the following steps: putting the crystal silicon wafer with clean surface into a container containing mixed solution of copper chloride, hydrochloric acid, sodium silicate and hydrofluoric acid, reacting for 20-40min at 80 ℃, so as to corrode the large-area micro-nano inverted pyramid suede on the surface of the silicon wafer, and then putting the corroded silicon wafer into aqua regia solution to soak and remove the residual metal on the surface. The invention has simple preparation process and low cost.
Description
Technical Field
The invention relates to the technical field of new materials and solar energy, in particular to a wet-process texturing method for a crystalline silicon inverted pyramid structure.
Background
The crystalline silicon wet chemical corrosion can realize the preparation of various silicon micro-nano structures, and has an important position in the microelectronic, micro-electromechanical system and photovoltaic industries. The pyramid array etched on the crystalline silicon has a great influence on the photoelectric conversion efficiency of the solar cell. On the surface of the research of solar cells in the scientific community for nearly half a century at present, the conventional preparation method of the pyramid array is limited to preparation by using inorganic alkali solution or organic alkali solution (see the Chinese patent CN 201310562781.9) or tetramethylammonium hydroxide corrosive solution (see the Chinese patent ZL 200410017032.9), but the positive pyramid array cannot be corroded on the silicon surface by using acidic hydrofluoric acid solution. In 2017, professor Shenwen faithful university of sea traffic proposed a method of combining metal catalytic etching and alkali corrosion to prepare an inverted pyramid structure on the silicon surface. The Dusaun researchers at the physical institute of the Chinese academy of sciences found that an inverted pyramid structure was prepared using an acidic solution containing copper. The subsequent method for preparing the inverted pyramid structure by the copper ion acidic solution is gradually improved. However, the method deposits a large amount of copper, which belongs to deep-level impurities, and causes large carrier recombination, thereby affecting photoelectric conversion efficiency, and the waste liquid is not environment-friendly. However, the method is easy to deposit a large amount of copper nanoparticles on the silicon surface in the etching process, and the etched inverted pyramid has large size and rough surface and does not play a good role in reducing the reflectivity.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a wet-method texturing method for a crystalline silicon inverted pyramid structure, which solves the problems in the background technology.
In order to achieve the purpose, the invention is realized by the following technical scheme: a wet-method texturing method for a crystalline silicon inverted pyramid structure comprises the following steps:
putting the crystal silicon wafer with a clean surface into a container containing a mixed solution of sodium silicate and hydrofluoric acid, reacting at 80 ℃ for 120-140min to corrode the large-area micro-nano inverted pyramid suede on the surface of the silicon wafer, and then putting the corroded silicon wafer into a deionized water solution to soak and remove the hydrofluoric acid remaining on the surface.
A wet-method texturing method for a crystalline silicon inverted pyramid structure further comprises the following steps:
putting the crystal silicon wafer with clean surface into a container containing mixed solution of copper chloride, hydrochloric acid, sodium silicate and hydrofluoric acid, reacting for 20-40min at 80 ℃, so as to corrode the large-area micro-nano inverted pyramid suede on the surface of the silicon wafer, and then putting the corroded silicon wafer into aqua regia solution to soak and remove the residual metal on the surface.
Optionally, the crystalline silicon wafer may be a monocrystalline silicon wafer or a polycrystalline silicon wafer.
Optionally, the concentration of the sodium silicate is 0.004-0.01mol/L, and the concentration of the hydrofluoric acid is 0.5-10 mol/L.
Optionally, the concentration of the copper chloride is 0.01-0.75mol/L, the concentration of the hydrochloric acid is 0.5-2.0mol/L, the concentration of the sodium silicate is 0.004-0.01mol/L, and the concentration of the hydrofluoric acid is 0.5-10 mol/L.
Optionally, the large-area micro-nano inverted pyramid textured surface obtained by corrosion can be used for a silicon solar cell.
The invention provides a crystalline silicon inverted pyramid structure wet-process texturing method, which has the following beneficial effects:
according to the invention, through understanding of metal catalytic etching, a novel method for preparing monocrystal silicon (N type and P type) surface inverted pyramid structured etching with application prospect in a hydrofluoric acid solution etching method is researched; the silicon wafer surface corroded by the method has extremely small copper deposition amount, and the corroded micro-nano inverted pyramid structure has macroscopically uniform structure, smooth microscopic surface and few defects, so the method has wide application prospect in the fields of solar cells and the like.
According to the invention, a large-area micro-nano inverted pyramid array structure can be prepared on the surface of crystalline silicon, and the inverted pyramid structure can effectively absorb light, so that the light reflection characteristic of a photovoltaic device is improved, and the photoelectric conversion efficiency of a solar cell is improved; the micro-nano structure inverted pyramid array prepared by the method has the advantages of small volume, large shape density and the like; the preparation method has the advantages of simple preparation process, low cost, safety and no pollution, and can be used for preparing the solar cell in a large scale.
Drawings
FIG. 1 is a scanning electron microscope topography of an inverted pyramid array prepared on a monocrystalline silicon crystal face according to the invention.
Detailed Description
According to the invention, anisotropic corrosion of silicon is realized in hydrofluoric acid solution, and a large-area micro-nano inverted pyramid structure can be prepared on the surface of the crystalline silicon (100). The invention is further illustrated by the following examples:
example 1
And (3) putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L sodium silicate and 10mol/L hydrofluoric acid for reaction at 80 ℃ for 120 minutes, and then cleaning the corroded silicon wafer by using deionized water.
Example 2
And (3) putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.55mol/L sodium silicate and 10mol/L hydrofluoric acid for reaction at 80 ℃ for 120 minutes, and then cleaning the corroded silicon wafer by using deionized water.
Example 3
And (3) putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing 0.6mol/L sodium silicate and 10mol/L hydrofluoric acid mixed solution for reaction at 80 ℃ for 120 minutes, and then cleaning the corroded silicon wafer by using deionized water.
Example 4
And (3) putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.65mol/L sodium silicate and 10mol/L hydrofluoric acid for reaction at 80 ℃ for 120 minutes, and then cleaning the corroded silicon wafer by using deionized water.
Example 5
And (3) putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.7mol/L sodium silicate and 10mol/L hydrofluoric acid for reaction at the temperature of 80 ℃ for 120 minutes, and then cleaning the corroded silicon wafer by using deionized water.
Example 6
And (3) putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.75mol/L sodium silicate and 10mol/L hydrofluoric acid for reaction at 80 ℃ for 120 minutes, and then cleaning the corroded silicon wafer by using deionized water.
Example 7
And (3) putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L sodium silicate and 10mol/L hydrofluoric acid for reacting for 130 minutes at 80 ℃, and then cleaning the corroded silicon wafer by using deionized water.
Example 8
And (3) putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L sodium silicate and 10mol/L hydrofluoric acid for reacting at 80 ℃ for 140 minutes, and then cleaning the corroded silicon wafer by using deionized water.
Example 9
And (3) putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L sodium silicate and 5mol/L hydrofluoric acid for reacting at 80 ℃ for 140 minutes, and then cleaning the corroded silicon wafer by using deionized water.
Example 10
And (3) putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.5mol/L sodium silicate and 2.5mol/L hydrofluoric acid for reacting at the temperature of 80 ℃ for 140 minutes, and then cleaning the corroded silicon wafer by using deionized water.
Example 11
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L sodium silicate, 0.5mol/L copper chloride, 0.5mol/L hydrochloric acid and 5mol/L hydrofluoric acid mixed solution for reacting for 20 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 12
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.2mol/L sodium silicate, 0.5mol/L copper chloride, 0.5mol/L hydrochloric acid and 5mol/L hydrofluoric acid mixed solution for reacting for 20 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 13
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.3mol/L sodium silicate, 0.5mol/L copper chloride, 0.5mol/L hydrochloric acid and 5mol/L hydrofluoric acid mixed solution for reacting for 20 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 14
Putting the cleaned monocrystalline silicon wafer into a polytetrafluoroethylene container containing 0.5mol/L sodium silicate, 0.5mol/L copper chloride, 0.5mol/L hydrochloric acid and 5mol/L hydrofluoric acid mixed solution for reacting for 20 minutes at 80 ℃, then putting the corroded silicon wafer into aqua regia for soaking for 10 minutes to remove metal particles remained on the surface of the silicon, and cleaning with deionized water.
Example 15
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L sodium silicate, 0.75mol/L copper chloride, 0.5mol/L hydrochloric acid and 5mol/L hydrofluoric acid mixed solution for reacting for 20 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 16
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L sodium silicate, 0.75mol/L copper chloride, 1mol/L hydrochloric acid and 5mol/L hydrofluoric acid mixed solution for reacting for 20 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove metal particles remained on the surface of the silicon, and cleaning with deionized water.
Example 17
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L sodium silicate, 0.75mol/L copper chloride, 2mol/L hydrochloric acid and 5mol/L hydrofluoric acid mixed solution for reacting for 20 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove metal particles remained on the surface of the silicon, and cleaning with deionized water.
Example 18
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L sodium silicate, 0.5mol/L copper chloride, 0.5mol/L hydrochloric acid and 5mol/L hydrofluoric acid mixed solution for reacting for 30 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 19
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L sodium silicate, 0.5mol/L copper chloride, 0.5mol/L hydrochloric acid and 5mol/L hydrofluoric acid mixed solution for reacting for 40 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 20
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.5mol/L sodium silicate, 0.5mol/L copper chloride, 0.5mol/L hydrochloric acid and 5mol/L hydrofluoric acid mixed solution for reacting for 40 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 21
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.5mol/L sodium silicate, 0.75mol/L copper chloride, 0.5mol/L hydrochloric acid and 5mol/L hydrofluoric acid mixed solution for reacting for 20 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 22
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L sodium silicate, 0.5mol/L copper chloride, 0.5mol/L hydrochloric acid and 10mol/L hydrofluoric acid mixed solution for reacting for 20 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
Example 23
Putting the cleaned monocrystalline silicon piece into a polytetrafluoroethylene container containing 0.1mol/L sodium silicate, 0.5mol/L copper chloride, 0.5mol/L hydrochloric acid and 10mol/L hydrofluoric acid mixed solution for reacting for 30 minutes at the temperature of 80 ℃, then putting the corroded silicon piece into aqua regia for soaking for 10 minutes to remove residual metal particles on the surface of the silicon, and cleaning with deionized water.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be able to cover the technical scope of the present invention and the equivalent alternatives or modifications according to the technical solution and the inventive concept of the present invention within the technical scope of the present invention.
Claims (6)
1. A wet-method texturing method for a crystalline silicon inverted pyramid structure comprises the following steps:
putting the crystal silicon wafer with a clean surface into a container containing a mixed solution of sodium silicate and hydrofluoric acid, reacting at 80 ℃ for 120-140min to corrode the large-area micro-nano inverted pyramid suede on the surface of the silicon wafer, and then putting the corroded silicon wafer into a deionized water solution to soak and remove the hydrofluoric acid remaining on the surface.
2. A wet-method texturing method for a crystalline silicon inverted pyramid structure further comprises the following steps:
putting the crystal silicon wafer with clean surface into a container containing mixed solution of copper chloride, hydrochloric acid, sodium silicate and hydrofluoric acid, reacting for 20-40min at 80 ℃, so as to corrode the large-area micro-nano inverted pyramid suede on the surface of the silicon wafer, and then putting the corroded silicon wafer into aqua regia solution to soak and remove the residual metal on the surface.
3. The crystalline silicon inverted pyramid structure wet-etching method as set forth in any one of claims 1 to 2, wherein: the crystal silicon wafer can be a monocrystalline silicon wafer or a polycrystalline silicon wafer.
4. The crystalline silicon inverted pyramid structure wet-method texturing method of claim 1, characterized in that: the concentration of the sodium silicate is 0.004-0.01mol/L, and the concentration of the hydrofluoric acid is 0.5-10 mol/L.
5. The crystalline silicon inverted pyramid structure wet-method texturing method of claim 2, characterized in that: the concentration of the copper chloride is 0.01-0.75mol/L, the concentration of the hydrochloric acid is 0.5-2.0mol/L, the concentration of the sodium silicate is 0.004-0.01mol/L, and the concentration of the hydrofluoric acid is 0.5-10 mol/L.
6. The wet texturing method for the crystalline silicon inverted pyramid structure according to any one of claims 1 to 2, wherein the large-area micro-nano inverted pyramid textured surface obtained by etching can be used for a silicon solar cell.
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| CN115161032A (en) * | 2022-07-05 | 2022-10-11 | 北京师范大学 | Etching solution and method suitable for monocrystalline silicon wafer |
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| CN109666972A (en) * | 2018-12-25 | 2019-04-23 | 浙江晶科能源有限公司 | A method of preparing monocrystalline silicon inverted pyramid flannelette |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115161032A (en) * | 2022-07-05 | 2022-10-11 | 北京师范大学 | Etching solution and method suitable for monocrystalline silicon wafer |
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