CN103219427A - Method for realizing high-trapping-light nanostructure single-face texture surface making - Google Patents
Method for realizing high-trapping-light nanostructure single-face texture surface making Download PDFInfo
- Publication number
- CN103219427A CN103219427A CN2013101235955A CN201310123595A CN103219427A CN 103219427 A CN103219427 A CN 103219427A CN 2013101235955 A CN2013101235955 A CN 2013101235955A CN 201310123595 A CN201310123595 A CN 201310123595A CN 103219427 A CN103219427 A CN 103219427A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- nanostructure
- silicon
- wool
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for realizing high-trapping-light nanostructure single-face texture surface making. The method comprises the steps: cleaning a silicon wafer; conducting re-spreading to the surface of the silicon wafer; removing residues on the surface of the silicon wafer which is re-spread; coating TiO2 of a nanostructure on the surface of the silicon wafer or depositing Ti on the surface of the silicon wafer, and rapidly annealing; conducting wet etching on the silicon wafer to form the nanostructure; and removing oxide and titanium ions which are not completely reacted on the surface of the silicon wafer. Compared with the prior art, the method is adopted to prepare the high-trapping-light nanostructure, only technology sequence is changed, and under the premise that key equipment is not increased, only one light source needs to be added or only sun light needs to be led in so that the purpose of single-face texture surface making can be achieved. The nanostructure has a good light trapping effect. Besides, the method is simple in process step, and suitable for mass production.
Description
Technical field
The present invention relates to silica-based high-efficiency solar cell preparing technical field, be particularly related to the implementation method of a kind of high sunken light nanostructure single face making herbs into wool, the effect that also has single face making herbs into wool on the basis that the high sunken light in surface is arranged is with the sunken light effect of further raising solar cell surface.
Background technology
The solar energy that earth every day receives is equivalent to 200 times of gross energy that All Around The World consumed in 1 year, the net quantity of heat of being emitted when the energy that sun per second sends just is about as much as 1.3 hundred million tons of standard coal completing combustions.Solar energy and to convert wind energy and oceanic energy by it be the main research focus of clean energy resource now.Solar cell is a kind of important renewable energy, both can be used as separate energy source, also can realize generating electricity by way of merging two or more grid systems, and realizes zero disposal of pollutants.
At present, conventional crystal silicon solar energy battery surface reflectivity reaches about 12%, and is not very very high to the utilance of light.In order further to reduce the reflectivity on silica-based solar cell surface, having researched and developed the sunken light antireflection structure of a kind of new height is the matte of nanostructure, and it can effectively improve the utilance of solar cell to light.In addition, the band gap of nanostructure can be adjusted according to the optimal absorption to sunlight, the solar cell theoretical efficiency with respect to the curve largest peaks of band gap near 1.5eV.Therefore can effectively adjust band gap by the pattern of adjusting nanostructure.Secondly, nanostructure can be used for ultraviolet light and blue light are transformed into the longer light of wavelength, plays down the effect of conversion, and silica-based solar cell has higher quantum efficiency to these light.In addition, the simplicity of chemical corrosion and be easy to large-area preparation and make nanostructure can become the candidate technologies that is suitable for large-area applications, but usually the single face making herbs into wool in the enterprise needs the equipment that waits costliness that float waterborne, the present invention only adds the effect that light source just can reach single face making herbs into wool on the original basis, can also prepare the better light trapping structure than enterprise simultaneously.
The inventor utilizes silica-based ultralow nanometer antireflection structure to carry out the preparation of high performance solar batteries at this.The structure of this method preparation has with the traditional handicraft compatibility, does not increase equipment cost, solves the problem of silicon chip and two-sided making herbs into wool high at the short-wave band reflectivity simultaneously.Utilize this method, on P type silicon chip, heavily expand earlier, utilize TiO
2The effect of light-catalyzed reaction, wet etching forms nanostructure under illumination condition, prepares passivation layer, electrode etc. in conjunction with traditional processing technology again, finally forms ultralow nanostructure anti-reflection high performance solar batteries, has improved the performance of battery.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide the implementation method of a kind of high sunken light nanostructure single face making herbs into wool, with the prerequisite of existing solar cell preparation technology compatibility under, innovation structure and improved process are proposed, to improve the transformation efficiency of solar cell.
(2) technical scheme
For achieving the above object, the invention provides the implementation method of a kind of high sunken light nanostructure single face making herbs into wool, comprising: cleaning silicon chip; Silicon chip surface is heavily spread; Removal is at the residue that heavily spreads the back silicon face; TiO in silicon chip surface coating nanometer structure
2, or in silicon chip surface deposit Ti and short annealing; Silicon chip is carried out wet etching form nanostructure; And the titanium ion of removing the oxide of silicon face and not having to have reacted.
In the such scheme, described silicon chip is a purity greater than 99.9999% P type solar energy-level silicon wafer, purity greater than 99.9999999999% P type integrated circuit level level silicon wafer or the indices of crystallographic plane P type silicon chip for (100).
In the such scheme, described cleaning silicon chip, be to remove surface particles and organic substance with the aqueous slkali soaking silicon chip earlier, be that 75 ℃ to 85 ℃ strong acid boil silicon chip with temperature again, remove the metal contamination of silicon face with this, remove the natural oxidizing layer of silicon face afterwards with the hydrofluoric acid that diluted, clean up with deionized water at last.
In the such scheme, described silicon chip surface heavily being spread, is by conventional diffusion technology the silicon chip that cleans up to be carried out deep diffusion, and diffusion depth is advanced toward the silicon chip depths, and the silicon chip side's resistance of diffusion back is 30～40 Ω/.
In the such scheme, described removal is to utilize the hydrofluoric acid of dilution to remove the phosphorosilicate glass that the diffusion back stays at silicon face at the heavy residue of diffusion back silicon face, with prevent after corrosion in anion in the consumption corrosive liquid.
In the such scheme, described TiO in silicon chip surface coating nanometer structure
2, be by the TiO of sol-gel process in silicon chip surface deposit nanostructure
2, or with TiO
2Powder of nanometric particles is adsorbed onto silicon chip surface by the Electrostatic Absorption mode.
In the such scheme, described in silicon chip surface deposit Ti and short annealing, be that the method by vacuum evaporation or magnetron sputtering forms the thick Ti of 2nm-40nm at silicon chip surface, and short annealing 20 seconds-30 minutes in nitrogen atmosphere, temperature is 330 ℃-800 ℃, forms the nano particle of Ti.
In the such scheme, describedly silicon chip is carried out wet etching forming nanostructure, is at ambient temperature silicon chip to be put into to contain hydrofluoric acid and hydrogen peroxide or contain hydrofluoric acid and the corrosive liquid of nitric acid corrodes.Described corrosive liquid is on the basis of hydrofluoric acid and hydrogen peroxide or hydrofluoric acid and nitric acid, adds ethanol, isopropyl alcohol or ethylene glycol again, with control reaction rate and nano particle size; Describedly silicon chip is carried out wet etching form in the process of nanostructure, also add illumination condition to realize single face making herbs into wool.
In the such scheme, the titanium ion that the oxide of described removal silicon face and not having has reacted is to utilize watery hydrochloric acid or sulfuric acid cleaned earlier, utilizes washed with de-ionized water again 2 minutes～30 minutes, the titanium ion of thoroughly removing the oxide on surface and not having to have reacted.
(3) beneficial effect
From technique scheme as can be seen, the present invention compared with prior art has tangible advantage and beneficial effect:
At first, this method utilizes method of diffusion traditional in the enterprise heavily to expand, by time expand can be suitable the propelling junction depth, help the assurance of open circuit voltage; Wet chemical etching technique under illumination condition, be to utilize PN junction under illumination condition, to produce the state that photo-generated carrier is broken electron hole balance under the effect of internal electric field of silicon inside, make it from the equilibrium state to the nonequilibrium state, thereby realize the internal electron of silicon and the electron exchange in the corrosive liquid, reach the purpose of corrosion of silicon, form silica-based ultralow nanometer antireflection structure, this structure has extraordinary sunken light action at short-wave band, and can adjust side's resistance of heavily expanding the back silicon face, make its optimal value that reaches normal battery, this helps improving the transformation efficiency of solar cell.
Secondly, this method is not limited to the single crystal battery sheet, and polycrystalline is had good making herbs into wool effect equally.The high performance solar batteries with ultralow anti-reflection nano-structure array of this method preparation, its preparation technology can well combine with existing technology, can keep under the prerequisite of lower cost the solar cell of preparation high conversion efficiency in the complexity that does not increase technology simultaneously.
In addition, the present invention has following practical advantage than other technologies aspect prepared:
1, the present invention adopts the wet chemical etching technique method to prepare ultralow antireflection structure, can greatly reduce the damage that causes because of dry etching, and is simple and easy to do, and compared to the conventional wet caustic solution better sunken light effect arranged, and helps reducing the solar cell cost.
2, illumination condition of the present invention is easy to put into production, and equipment is simple to operation, for the monocrystalline polycrystalline good corrosive effect is arranged all, can also solve the difficult problem of single face making herbs into wool, can reach the high effect that falls into light equally.
3, the high light nanostructure single face etching method that falls into of the present invention is not adding any extra equipment, only need change process sequences on the original basis, improves existing equipment and just can reach better benefit.
In sum, the high light nanostructure single face etching method that falls into of the present invention is compared with conventional method, has above-mentioned tangible beneficial effect.Above-mentioned many advantages and practical value are had large improvement technically, and have produced handy and practical effect, thereby are suitable for large-scale application more.
Description of drawings
Fig. 1 is the implementation method flow chart that falls into the making herbs into wool of light nanostructure single face according to the height of the embodiment of the invention;
Fig. 2 is the schematic diagram according to the illumination corrosion of silicon equipment of the embodiment of the invention;
Fig. 3 is the cross section shape appearance figure according to silicon chip after the corrosion of the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, the height that foundation the present invention is proposed falls into its embodiment of light nanostructure single face etching method, structure, feature and effect thereof, describes in detail as the back:
As shown in Figure 1, Fig. 1 is the implementation method flow chart that falls into the making herbs into wool of light nanostructure single face according to the height of the embodiment of the invention, and this method may further comprise the steps:
Wherein, described silicon chip is a purity greater than 99.9999% P type solar energy-level silicon wafer, purity greater than 99.9999999999% P type integrated circuit level level silicon wafer or the indices of crystallographic plane P type silicon chip for (100).
Adopt RCA method cleaning silicon chip described in the above-mentioned steps 001, promptly remove surface particles and organic substance with the aqueous slkali soaking silicon chip earlier, be that 75 ℃ to 85 ℃ strong acid boil silicon chip with temperature again, remove the metal contamination of silicon face with this, remove the natural oxidizing layer of silicon face afterwards with the hydrofluoric acid that diluted, clean up with deionized water at last.
Described in the above-mentioned steps 002 silicon chip surface is heavily spread, this step only need spread clean silicon chip by conventional diffusion technology, but different is the time that will prolong diffusion, order ground mainly is diffusion depth is advanced toward the silicon chip depths, and the silicon chip side's resistance of diffusion back is about 30～40 Ω/.
Remove described in the above-mentioned steps 003 at the heavy residue of diffusion back silicon face, this step mainly is to utilize the hydrofluoric acid of dilution to remove the phosphorosilicate glass that the diffusion back stays at silicon face, with prevent after corrosion in anion in the consumption corrosive liquid.
Described in the above-mentioned steps 004 at the TiO of silicon chip surface coating nanometer structure
2Or in silicon chip surface deposit Ti and short annealing, at ambient temperature above-mentioned silicon chip is carried out the illumination wet etching and form nanostructure, this step mainly is to utilize hydrofluoric acid to add hydrogen peroxide or hydrofluoric acid adds nitric acid, and add additives such as ethanol, isopropyl alcohol, ethylene glycol therein and control reaction rate and nano particle sizes, and in the process of making herbs into wool, make the resistance of its surface side reach the conventional value of comparatively optimizing by this step, i.e. 50～60 Ω/, in addition, adding illumination condition in this process is in order to realize the effect of single face making herbs into wool.Described TiO in silicon chip surface coating nanometer structure
2, be by the TiO of sol-gel process in silicon chip surface deposit nanostructure
2, or with TiO
2Powder of nanometric particles is adsorbed onto silicon chip surface by the Electrostatic Absorption mode.Described in silicon chip surface deposit Ti and short annealing, be that method by vacuum evaporation or magnetron sputtering forms the thick Ti of 2nm-40nm at silicon chip surface, and short annealing 20 seconds-30 minutes in nitrogen atmosphere, temperature is 330 ℃-800 ℃, forms the nano particle of Ti.Describedly silicon chip is carried out wet etching forming nanostructure, is at ambient temperature silicon chip to be put into to contain hydrofluoric acid and hydrogen peroxide or contain hydrofluoric acid and the corrosive liquid of nitric acid corrodes.Described corrosive liquid is on the basis of hydrofluoric acid and hydrogen peroxide or hydrofluoric acid and nitric acid, adds ethanol, isopropyl alcohol or ethylene glycol again, with control reaction rate and nano particle size; Describedly silicon chip is carried out wet etching form in the process of nanostructure, also add illumination condition to realize single face making herbs into wool.
The titanium ion of removing the oxide of silicon face described in the above-mentioned steps 005 and not having to have reacted mainly is to utilize the washed with de-ionized water silicon chip that the anion of silicon face is cleaned up.Utilize watery hydrochloric acid or sulfuric acid cleaned earlier, utilized washed with de-ionized water again 2 minutes～30 minutes, the titanium ion of thoroughly removing the oxide on surface and not having to have reacted.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned elaboration is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (10)
1. the implementation method of one kind high sunken light nanostructure single face making herbs into wool is characterized in that, comprising:
Cleaning silicon chip;
Silicon chip surface is heavily spread;
Removal is at the residue that heavily spreads the back silicon face;
TiO in silicon chip surface coating nanometer structure
2, or in silicon chip surface deposit Ti and short annealing;
Silicon chip is carried out wet etching form nanostructure; And
The titanium ion of removing the oxide of silicon face and not having to have reacted.
2. height according to claim 1 falls into the implementation method of light nanostructure single face making herbs into wool, it is characterized in that described silicon chip is a purity greater than 99.9999% P type solar energy-level silicon wafer, purity greater than 99.9999999999% P type integrated circuit level level silicon wafer or the indices of crystallographic plane P type silicon chip for (100).
3. height according to claim 1 falls into the implementation method of light nanostructure single face making herbs into wool, it is characterized in that, described cleaning silicon chip, be to remove surface particles and organic substance with the aqueous slkali soaking silicon chip earlier, be that 75 ℃ to 85 ℃ strong acid boil silicon chip with temperature again, remove the metal contamination of silicon face with this, remove the natural oxidizing layer of silicon face afterwards with the hydrofluoric acid that diluted, clean up with deionized water at last.
4. height according to claim 1 falls into the implementation method of light nanostructure single face making herbs into wool, it is characterized in that, described silicon chip surface is heavily spread, be the silicon chip that cleans up to be carried out deep diffusion by conventional diffusion technology, diffusion depth is advanced toward the silicon chip depths, and the silicon chip side's resistance of diffusion back is 30～40 Ω/.
5. height according to claim 1 falls into the implementation method of light nanostructure single face making herbs into wool, it is characterized in that, described removal is at the residue that heavily spreads the back silicon face, be to utilize the hydrofluoric acid of dilution to remove the phosphorosilicate glass that the diffusion back stays at silicon face, with prevent after corrosion in anion in the consumption corrosive liquid.
6. height according to claim 1 falls into the implementation method of light nanostructure single face making herbs into wool, it is characterized in that described TiO in silicon chip surface coating nanometer structure
2, be by the TiO of sol-gel process in silicon chip surface deposit nanostructure
2, or with TiO
2Powder of nanometric particles is adsorbed onto silicon chip surface by the Electrostatic Absorption mode.
7. height according to claim 1 falls into the implementation method of light nanostructure single face making herbs into wool, it is characterized in that, described in silicon chip surface deposit Ti and short annealing, be that method by vacuum evaporation or magnetron sputtering forms the thick Ti of 2nm-40nm at silicon chip surface, and short annealing 20 seconds-30 minutes in nitrogen atmosphere, temperature is 330 ℃-800 ℃, forms the nano particle of Ti.
8. height according to claim 1 falls into the implementation method of light nanostructure single face making herbs into wool, it is characterized in that, describedly silicon chip is carried out wet etching forming nanostructure, is at ambient temperature silicon chip to be put into to contain hydrofluoric acid and hydrogen peroxide or contain hydrofluoric acid and the corrosive liquid of nitric acid corrodes.
9. height according to claim 8 falls into the implementation method of light nanostructure single face making herbs into wool, it is characterized in that,
Described corrosive liquid is on the basis of hydrofluoric acid and hydrogen peroxide or hydrofluoric acid and nitric acid, adds ethanol, isopropyl alcohol or ethylene glycol again, with control reaction rate and nano particle size;
Describedly silicon chip is carried out wet etching form in the process of nanostructure, also add illumination condition to realize single face making herbs into wool.
10. height according to claim 1 falls into the implementation method of light nanostructure single face making herbs into wool, it is characterized in that, the titanium ion that the oxide of described removal silicon face and not having has reacted, be to utilize watery hydrochloric acid or sulfuric acid cleaned earlier, utilized washed with de-ionized water again 2 minutes～30 minutes, the titanium ion of thoroughly removing the oxide on surface and not having to have reacted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101235955A CN103219427A (en) | 2013-04-10 | 2013-04-10 | Method for realizing high-trapping-light nanostructure single-face texture surface making |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101235955A CN103219427A (en) | 2013-04-10 | 2013-04-10 | Method for realizing high-trapping-light nanostructure single-face texture surface making |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103219427A true CN103219427A (en) | 2013-07-24 |
Family
ID=48817045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101235955A Pending CN103219427A (en) | 2013-04-10 | 2013-04-10 | Method for realizing high-trapping-light nanostructure single-face texture surface making |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103219427A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103774239A (en) * | 2013-11-13 | 2014-05-07 | 河南科技学院 | Cleaning and wool making technology for monocrystal silicon chip |
| CN104409529A (en) * | 2014-11-27 | 2015-03-11 | 浙江昱辉阳光能源江苏有限公司 | Manufacturing process for microstructural textured polycrystalline silicon solar cell |
| CN105113015A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Low-reflectivity monocrystalline silicon piece texture surface making liquid and preparation method thereof |
| CN105113016A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Deoiling and dewaxing monocrystalline silicon wafer texturing liquid and preparing method thereof |
| CN105133027A (en) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | Small-textured-face monocrystalline silicon slice texturing solution and preparation method thereof |
| CN109713086A (en) * | 2018-12-19 | 2019-05-03 | 北京合德丰材料科技有限公司 | A kind of nonmetallic black silicon Woolen-making liquid and the method using Woolen-making liquid progress making herbs into wool |
| CN111729189A (en) * | 2020-06-29 | 2020-10-02 | 嘉兴尚牧智能装备有限公司 | Silicon-based patch and preparation method thereof |
| CN113540364A (en) * | 2021-07-15 | 2021-10-22 | 浙江爱旭太阳能科技有限公司 | Perovskite battery manufacturing method and perovskite battery |
| CN113523576A (en) * | 2021-07-15 | 2021-10-22 | 浙江爱旭太阳能科技有限公司 | Suede manufacturing method, laminated battery manufacturing method and laminated battery |
| CN114664972A (en) * | 2020-12-23 | 2022-06-24 | 比亚迪股份有限公司 | Silicon wafer polishing method, solar cell preparation method and solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080135856A1 (en) * | 2006-11-03 | 2008-06-12 | Lg Electronics Inc. | Light emitting device having vertical topology and method for manufacturing the same |
| CN102007581A (en) * | 2008-03-21 | 2011-04-06 | 可持续能源联盟有限责任公司 | Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions |
| CN102945791A (en) * | 2012-11-29 | 2013-02-27 | 上海集成电路研发中心有限公司 | Preparation method of silicon nanowire array |
-
2013
- 2013-04-10 CN CN2013101235955A patent/CN103219427A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080135856A1 (en) * | 2006-11-03 | 2008-06-12 | Lg Electronics Inc. | Light emitting device having vertical topology and method for manufacturing the same |
| CN102007581A (en) * | 2008-03-21 | 2011-04-06 | 可持续能源联盟有限责任公司 | Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions |
| CN102945791A (en) * | 2012-11-29 | 2013-02-27 | 上海集成电路研发中心有限公司 | Preparation method of silicon nanowire array |
Non-Patent Citations (1)
| Title |
|---|
| 林阳 等: "TiO2光诱导制备超小绒面太阳电池的性能", 《硅酸盐学报》, vol. 40, no. 7, 3 July 2012 (2012-07-03), pages 1037 - 1039 * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103774239A (en) * | 2013-11-13 | 2014-05-07 | 河南科技学院 | Cleaning and wool making technology for monocrystal silicon chip |
| CN103774239B (en) * | 2013-11-13 | 2016-08-17 | 河南科技学院 | A kind of monocrystal silicon silicon chip cleaning and texturing technique |
| CN104409529A (en) * | 2014-11-27 | 2015-03-11 | 浙江昱辉阳光能源江苏有限公司 | Manufacturing process for microstructural textured polycrystalline silicon solar cell |
| CN105113015A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Low-reflectivity monocrystalline silicon piece texture surface making liquid and preparation method thereof |
| CN105113016A (en) * | 2015-08-21 | 2015-12-02 | 合肥中南光电有限公司 | Deoiling and dewaxing monocrystalline silicon wafer texturing liquid and preparing method thereof |
| CN105133027A (en) * | 2015-08-21 | 2015-12-09 | 合肥中南光电有限公司 | Small-textured-face monocrystalline silicon slice texturing solution and preparation method thereof |
| CN109713086A (en) * | 2018-12-19 | 2019-05-03 | 北京合德丰材料科技有限公司 | A kind of nonmetallic black silicon Woolen-making liquid and the method using Woolen-making liquid progress making herbs into wool |
| CN109713086B (en) * | 2018-12-19 | 2020-09-11 | 北京合德丰材料科技有限公司 | Non-metal black silicon texturing liquid and texturing method using same |
| CN111729189A (en) * | 2020-06-29 | 2020-10-02 | 嘉兴尚牧智能装备有限公司 | Silicon-based patch and preparation method thereof |
| CN114664972A (en) * | 2020-12-23 | 2022-06-24 | 比亚迪股份有限公司 | Silicon wafer polishing method, solar cell preparation method and solar cell |
| CN114664972B (en) * | 2020-12-23 | 2024-04-16 | 比亚迪股份有限公司 | Polishing method of silicon wafer, preparation method of solar cell and solar cell |
| CN113540364A (en) * | 2021-07-15 | 2021-10-22 | 浙江爱旭太阳能科技有限公司 | Perovskite battery manufacturing method and perovskite battery |
| CN113523576A (en) * | 2021-07-15 | 2021-10-22 | 浙江爱旭太阳能科技有限公司 | Suede manufacturing method, laminated battery manufacturing method and laminated battery |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103219427A (en) | Method for realizing high-trapping-light nanostructure single-face texture surface making | |
| TWI669830B (en) | Method for manufacturing local back contact solar cell | |
| CN103337560B (en) | For the preparation method of the three-dimensional silicon nano structure of solar cell | |
| KR100928302B1 (en) | Method for manufacturing solar cell of tricrystalline silicon using surfactant and acid solution wet etching method | |
| CN102403376B (en) | n-i-p heterojunction solar cell with silicon quantum dot and preparation method thereof | |
| CN102487105A (en) | Method for preparing high efficiency solar cell with stereostructure | |
| CN102593261A (en) | Silicon substrate nano-structure for solar cell and preparing method thereof | |
| CN102181935A (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
| CN102270688A (en) | Solar cell | |
| CN103746013A (en) | Graphene solar cell and preparation method thereof | |
| CN102660776A (en) | Method for preparing black silicon through Mn ion catalysis and corrosion | |
| CN103219426A (en) | Extra small suede solar cell and preparation method thereof | |
| CN110165002A (en) | A kind of preparation method of solar battery and solar battery | |
| CN104362219A (en) | Crystalline solar cell production process | |
| CN103730522A (en) | Photovoltaic conversion structure, solar battery with photovoltaic conversion structure and manufacturing method of photovoltaic conversion structure | |
| Chen et al. | Improvement of conversion efficiency of multi-crystalline silicon solar cells using reactive ion etching with surface pre-etching | |
| CN103746006A (en) | Passivating layer of crystalline silicon solar cell and passivating process thereof | |
| CN103924306B (en) | A kind of etching method of silicon heterojunction solar battery | |
| CN203733813U (en) | Graphene solar cell | |
| CN102593245B (en) | Method for preparing high efficient low cost crystalline silicon solar cell | |
| CN104505430A (en) | High-efficiency polycrystalline black silicon cell | |
| CN104952961B (en) | A kind of n CdSxSe1‑xFilm/Graphene schottky junction solar cell | |
| CN103236451A (en) | Ultra-small textured silicon solar cell combining with zinc oxide nanowires and preparation method of ultra-small textured silicon solar cell | |
| CN104485367A (en) | Micro-nano structure capable of improving properties of HIT solar cells and preparation method of micro-nano structure | |
| KR101134131B1 (en) | Surface processing method of silicon substrate for silicon solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130724 |