CN109713086B - Non-metal black silicon texturing liquid and texturing method using same - Google Patents
Non-metal black silicon texturing liquid and texturing method using same Download PDFInfo
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Abstract
The invention relates to a non-metal black silicon texturing solution and a texturing method by using the same. The non-metal black silicon texturing solution contains hydrofluoric acid, nitric acid and an additive; the additive comprises the following components: the osmotic agent is selected from one or more of sodium dodecyl benzene sulfonate, polyoxyethylene nonyl phenyl ether and sodium dodecyl sulfate; the corrosion inhibitor is selected from one or more of phosphine carboxylic acid, thiobenzothiazole, benzotriazole and sulfonated lignin; defoaming agents; and a solvent. The texturing method comprises the following steps: providing a texturing solution; immersing a silicon wafer into the texturing solution; starting a light source to irradiate the surface of the silicon wafer; cleaning a silicon wafer; carrying out hole expanding treatment; and sequentially cleaning, alkaline washing, water washing, acid washing, water washing and drying the silicon wafer. The texturing solution can effectively reduce the reflectivity of the diamond wire polycrystalline silicon wafer, and the method has low cost and stable process.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a non-metal black silicon texturing solution and a texturing method by using the same.
Background
At present, the cutting of the polycrystalline silicon wafer in the photovoltaic field is mainly carried out by a diamond wire multi-wire cutting technology, and the technology has the advantages of high cutting efficiency, low processing cost, small environmental pollution and the like, but the silicon wafer cut by the technology has a shallow surface damage layer, the surface reflectivity processed by the conventional acid texturing process is higher, and the battery efficiency is lower. In the current solar cell production process, HF-HNO is mostly adopted3-H2The O + additive system is used for texturing the surface of the silicon wafer, but the reflectivity of the surface of the silicon wafer prepared by using the system is still high.
In order to solve the problem that the reflectivity of the diamond wire polycrystalline texturing additive is high after conventional texturing, people try to perform surface texture on a diamond wire polycrystalline silicon wafer by using a plasma vapor etching method (RIE) and a noble metal assisted etching Method (MAAC), but the RIE method has high equipment cost and poor process stability; the MAAC method needs silver nitrate, has great harm to the environment and poor process stability, and is not suitable for large-scale production.
Disclosure of Invention
Technical problem to be solved
The technical problem to be solved by the invention is as follows: the texturing method can be applied to diamond wire cutting polycrystalline silicon chips, and can effectively reduce the reflectivity of the diamond wire polycrystalline silicon chips.
(II) technical scheme
In order to solve the technical problems, the invention provides the following technical scheme:
1. the non-metal black silicon texturing solution comprises hydrofluoric acid, nitric acid and an additive;
the additive comprises the following components:
the osmotic agent is selected from one or more of sodium dodecyl benzene sulfonate, polyoxyethylene nonyl phenyl ether and sodium dodecyl sulfate;
the corrosion inhibitor is selected from one or more of phosphine carboxylic acid, thiobenzothiazole, benzotriazole and sulfonated lignin;
defoaming agents; and
a solvent.
2. According to the technical scheme 1, in the additive, the penetrant is 0.01-10% by mass, and the corrosion inhibitor is 0.1-10% by mass.
3. According to the nonmetal black silicon texturing solution in the technical scheme 2, the defoaming agent is an organic silicon defoaming agent; and the mass percentage of the defoaming agent in the additive is 0.001-1%.
4. According to the non-metal black silicon texturing solution of the technical scheme 2 or 3, the additive amount of the additive meets the following conditions: the volume of the additive accounts for 0.5-1.5% of the volume of the wool making liquid.
5. According to the non-metal black silicon texturing solution in the technical scheme 1, the concentration of hydrofluoric acid in the texturing solution is 300-360 g/L; and/or
The concentration of the nitric acid in the wool making liquid is 90-150 g/L.
6. A non-metal black silicon texturing method comprises the following steps:
(1) providing the texturing solution of any one of technical schemes 1 to 5;
(2) immersing a silicon wafer into the texturing solution;
(3) starting a light source to irradiate the surface of the silicon wafer;
(4) cleaning a silicon wafer;
(5) carrying out hole expanding treatment;
(6) and sequentially cleaning, alkaline washing, water washing, acid washing, water washing and drying the silicon wafer.
7. According to the texturing method of the technical scheme 6, in the step (2), the used silicon wafer is a silicon wafer with a damaged layer or a silicon wafer etched by acid liquor or alkali liquor; and/or
And immersing the silicon wafer into the texturing liquid by adopting a horizontal placement method or a vertical placement method, wherein the silicon wafer is completely immersed into the texturing liquid or one surface of the silicon wafer is contacted with the texturing liquid while the other surface of the silicon wafer is contacted with air.
8. According to the texturing method of the technical scheme 6, in the step (3), the light source is one or more of an LED light source, a halogen lamp light source, a xenon lamp light source or a laser light source; and/or
The light source only irradiates one surface of the silicon wafer.
9. According to the texturing method of the technical scheme 6, in the step (5), a silicon wafer is immersed in a hole expanding liquid for hole expanding treatment;
the hole expanding solution is an acidic corrosive solution or an alkaline corrosive solution;
further preferably, the acidic etching solution comprises hydrofluoric acid, nitric acid and water; wherein, the concentration of hydrofluoric acid is 50 to 90g/L, and the concentration of nitric acid is 360 to 600 g/L;
further preferably, the alkaline corrosion solution comprises an alkaline component and water, wherein the alkaline component is any one or more of sodium hydroxide, potassium hydroxide and tetramethyl ammonium hydroxide; wherein the alkalinity of the alkaline corrosive liquid is 0.1 to 5 percent.
10. According to the texturing method of claim 6, in the step (6), the process conditions of the alkali washing include: performing alkaline washing by using 0.1 to 5 percent sodium hydroxide or potassium hydroxide solution, wherein the alkaline washing temperature is 10 to 40 ℃, and the time is 10 to 180 s; and
the pickling process conditions comprise: the method comprises the steps of pickling with a mixed solution of hydrofluoric acid, hydrochloric acid and water according to a volume ratio of 1:2:4, wherein the volume of the hydrofluoric acid is calculated by 40% of the hydrofluoric acid, the volume of the hydrochloric acid is calculated by 37% of the hydrochloric acid, the pickling temperature is 10-40 ℃, and the pickling time is 10-180 s.
(III) advantageous effects
The technical scheme of the invention has the following advantages:
the texturing solution provided by the invention can greatly reduce the surface reflectivity of the textured silicon wafer through the action of the additive containing penetrant, corrosion inhibitor and defoaming agent and hydrofluoric acid and nitric acid.
The texturing method provided by the invention has the advantages of low cost, stable process and the like.
Drawings
FIG. 1 is a schematic view of a silicon wafer immersed in a texturing solution in a vertical manner;
FIG. 2 is a schematic view of a silicon wafer contacting with a texturing solution in a horizontal manner on one side;
FIG. 3 is a schematic view of a silicon wafer fully immersed in a texturing solution in a horizontal manner;
FIG. 4 is a SEM photograph of the silicon wafer treated in step (4) in example 1;
FIG. 5 is a SEM photograph of the silicon wafer treated in step (6) in example 1.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The invention provides a non-metal black silicon texturing solution which comprises hydrofluoric acid, nitric acid and an additive; the additive comprises the following components:
the osmotic agent is selected from one or more of sodium dodecyl benzene sulfonate, polyoxyethylene nonyl phenyl ether and sodium dodecyl sulfate;
the corrosion inhibitor is selected from one or more of phosphine carboxylic acid, thiobenzothiazole, benzotriazole and sulfonated lignin;
defoaming agents; and
solvent (deionized water can be used as solvent).
In some preferred embodiments, the content of the penetrant in the additive is 0.01% to 10% by mass, and for example, may be 0.01%, 0.05%, 0.1%, 0.5%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%;
the mass percentage of the corrosion inhibitor is 0.1% to 10%, for example, 0.1%, 0.5%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%.
In some preferred embodiments, the defoamer is a silicone defoamer; and the content of the antifoaming agent in the additive is 0.001% to 1% by mass, for example, may be 0.001%, 0.002%, 0.003%, 0.005%, 0.008%, 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%.
In some preferred embodiments, the additive is added in an amount satisfying the following condition: the volume of the additive is 0.5% to 1.5% of the volume of the texturing liquid, and may be 0.5%, 1%, 1.5%, for example.
In some preferred embodiments, the concentration of the hydrofluoric acid in the texturing solution is 300 to 360 g/L; the concentration of the nitric acid in the wool making liquid is 90-150 g/L.
The invention also provides a non-metal black silicon texturing method, which comprises the following steps:
(1) providing the texturing solution provided by the invention;
(2) immersing a silicon wafer into the texturing solution;
the silicon wafer can be a silicon wafer with a damaged layer or a silicon wafer etched by acid liquor or alkali liquor. Immersing a silicon wafer into a texturing solution, wherein the silicon wafer can be immersed into the texturing solution by a horizontal placement method or a vertical placement method, wherein the silicon wafer is completely immersed into the texturing solution or one surface of the silicon wafer is contacted with the texturing solution while the other surface of the silicon wafer is contacted with air;
(3) starting a light source to irradiate the surface of the silicon wafer;
the light source can be one or more of an LED light source, a halogen lamp light source, a xenon lamp light source or a laser light source; in some preferred embodiments, the light source illuminates only one side of the wafer (where the side is the two sides of the wafer having the larger surface area);
(4) cleaning the silicon wafer to remove acid liquor on the surface of the silicon wafer; deionized water can be adopted for cleaning;
(5) carrying out hole expanding treatment;
immersing the silicon wafer into a hole expanding liquid for hole expanding treatment;
the hole expanding solution can adopt acidic corrosive solution or alkaline corrosive solution;
further preferably, the acidic etching solution comprises hydrofluoric acid, nitric acid and water; wherein, the concentration of hydrofluoric acid is 50 to 90g/L, and the concentration of nitric acid is 360 to 600 g/L;
further preferably, the alkaline corrosion solution comprises an alkaline component and water, wherein the alkaline component is any one or more of sodium hydroxide, potassium hydroxide and tetramethyl ammonium hydroxide; wherein the alkalinity of the alkaline corrosive liquid is 0.1 to 5 percent;
(6) and sequentially cleaning, alkaline washing, water washing, acid washing, water washing and drying the silicon wafer.
The process conditions of the alkaline washing comprise: performing alkaline washing with 0.1 to 5% (e.g., 0.1%, 0.5%, 1%, 2%, 3%, 4%, 5%) sodium hydroxide or potassium hydroxide solution at 10 to 40 deg.C (e.g., 10 deg.C, 20 deg.C, 30 deg.C or 40 deg.C) for 10 to 180 s; and
the pickling process conditions comprise: the mixed solution of hydrofluoric acid, hydrochloric acid and water in a volume ratio of 1:2:4 is adopted for pickling, wherein the volume of the hydrofluoric acid is calculated by 40% of the hydrofluoric acid, and the volume of the hydrochloric acid is calculated by 37% of the hydrochloric acid, namely, the consumption of the hydrofluoric acid and the hydrochloric acid in the mixed solution for pickling meets the following conditions: the volume ratio of 40% hydrofluoric acid, 37% hydrochloric acid and water is 1:2: 4. Of course, if hydrofluoric acid or hydrochloric acid of other mass concentrations is selected, the converted amount may satisfy the above conditions. The pickling temperature is 10 to 40 ℃ (for example, 10 ℃, 20 ℃, 30 ℃ or 40 ℃) and the time is 10 to 180 seconds.
The following are examples of the present invention.
Example 1
(1) Uniformly mixing hydrofluoric acid, nitric acid, an additive and deionized water to prepare 800mL of nonmetal black silicon texturing solution; wherein the concentration of hydrofluoric acid is 336g/L, the concentration of nitric acid is 113g/L, and the volume consumption of the additive is 1 percent of the total volume of the wool making liquid; the formula of the additive is as follows: the content of sodium dodecyl benzene sulfonate is 0.01 wt%, the content of organosilicon defoamer is 0.001 wt%, the content of sulfobenzothiazole is 1 wt%, and the balance is deionized water.
(2) And (2) immersing the diamond wire polycrystalline silicon wafer with the damage layer into the texturing solution prepared in the step (1) in a vertical placement mode (shown in figure 1).
(3) And (3) irradiating one surface of the silicon wafer by using an LED light source for 180 s.
(4) Washing the surface of the silicon wafer treated in the step 3 by using deionized water;
(5) immersing the cleaned silicon wafer into a hole expanding solution for hole expanding treatment; the hole expanding solution is an acidic corrosive solution, and the acidic corrosive solution comprises hydrofluoric acid, nitric acid and deionized water, wherein the concentration of the hydrofluoric acid is 50g/L, and the concentration of the nitric acid is 360 g/L; when the hole expanding treatment is carried out, the hole expanding temperature is 8 ℃ and the time is 60 s.
(6) And taking out the silicon wafer, and drying the silicon wafer after deionized water cleaning, alkali washing, water washing, acid washing and water washing in sequence. Carrying out alkali washing by using 1 wt% KOH solution at the temperature of 25 ℃ for 60 s; with 40 wt% HF: 37 wt% HCl: h2Pickling with mixed acid solution of O1: 2:4 (volume ratio) at the pickling temperatureThe temperature is 25 ℃ and the time is 60 s.
And (3) analyzing the silicon wafer obtained in the step (4) and the silicon wafer obtained in the step (6) by using a scanning electron microscope, wherein the scanning electron microscope photographs are shown in fig. 4 and 5, wherein fig. 4 is the scanning electron microscope photograph of the silicon wafer processed in the step (4), and fig. 5 is the scanning electron microscope photograph of the silicon wafer processed in the step (6).
The silicon wafer obtained in example 1 was subjected to reflectance analysis, and the test results are shown in table 1. As can be seen from Table 1, the silicon wafer textured by the method of the present invention can greatly reduce the surface reflectivity of the silicon wafer.
TABLE 1
| Object | Test value | Testing instrument |
| The reflectivity of the surface of the silicon wafer treated in the step (4) | 6％ | D8 reflectivity tester |
| The reflectivity of the surface of the silicon wafer treated in the step (6) | 18％ | D8 reflectivity tester |
Example 2
(1) Uniformly mixing 40 wt% of hydrofluoric acid, 65 wt% of nitric acid, an additive and deionized water to prepare 800mL of non-metal black silicon texturing solution; wherein the concentration of hydrofluoric acid is 336g/L, the concentration of nitric acid is 113g/L, and the volume consumption of the additive is 1 percent of the total volume of the wool making liquid; the formula of the additive is as follows: the content of sodium dodecyl benzene sulfonate is 0.1 wt%, the content of organosilicon defoamer is 0.02 wt%, the content of sulfobenzothiazole is 1 wt%, and the balance is deionized water.
(2) And (2) immersing the diamond wire polycrystalline silicon slice with the damage layer into the texturing solution prepared in the step (1) in a horizontal placement mode (as shown in figure 2).
(3) The B-side (i.e., the upper surface as shown in fig. 2) of the silicon wafer was illuminated using an LED light source for 60 seconds.
(4) Washing the surface of the silicon wafer treated in the step 3 by using deionized water;
(5) immersing the cleaned silicon wafer into a hole expanding solution for hole expanding treatment; the hole expanding solution is an acidic corrosive solution, and the acidic corrosive solution comprises hydrofluoric acid, nitric acid and deionized water, wherein the concentration of the hydrofluoric acid is 50g/L, and the concentration of the nitric acid is 360 g/L; when the hole expanding treatment is carried out, the hole expanding temperature is 8 ℃ and the time is 60 s.
(6) And taking out the silicon wafer, and drying the silicon wafer after deionized water cleaning, alkali washing, water washing, acid washing and water washing in sequence. Carrying out alkali washing by using 1 wt% KOH solution at the temperature of 25 ℃ for 60 s; with 40 wt% HF: 37 wt% HCl: h2And (3) carrying out acid washing on the mixed acid solution with the volume ratio of O-1: 2:4 at the temperature of 25 ℃ for 60 s.
The silicon wafer obtained in example 2 was subjected to reflectance analysis, and the test results are shown in table 2. As can be seen from Table 2, the silicon wafer textured by the method of the present invention can greatly reduce the surface reflectivity of the silicon wafer.
TABLE 2
| Data analysis | Test value | Testing instrument |
| The reflectivity of the surface of the silicon wafer treated in the step (4) | 6％ | D8 reflectivity tester |
| The reflectivity of the A surface of the silicon wafer treated in the step (6) | 16％ | D8 reflectivity tester |
| Reflectivity of B surface of silicon wafer treated in step (6) | 19％ | D8 reflectivity tester |
Example 3
(1) Uniformly mixing 40 wt% of hydrofluoric acid, 65 wt% of nitric acid, an additive and deionized water to prepare 800mL of non-metal black silicon texturing solution; wherein the concentration of hydrofluoric acid is 336g/L, the concentration of nitric acid is 113g/L, and the volume consumption of the additive is 1 percent of the total volume of the wool making liquid; the formula of the additive is as follows: the content of sodium dodecyl benzene sulfonate is 0.1 wt%, the content of organosilicon defoamer is 0.02 wt%, the content of sulfobenzothiazole is 1 wt%, and the balance is deionized water.
(2) And (3) immersing the diamond wire polycrystalline silicon slice with the damage layer into the texturing solution prepared in the step (1) in a horizontal placement mode (as shown in figure 3).
(3) And (3) irradiating the surface B of the silicon wafer by using an LED light source for 60 s.
(4) Washing the surface of the silicon wafer treated in the step 3 by using deionized water;
(5) immersing the cleaned silicon wafer into a hole expanding solution for hole expanding treatment; the hole expanding solution is an acidic corrosive solution, and the acidic corrosive solution comprises hydrofluoric acid, nitric acid and deionized water, wherein the concentration of the hydrofluoric acid is 50g/L, and the concentration of the nitric acid is 360 g/L; when the hole expanding treatment is carried out, the hole expanding temperature is 8 ℃ and the time is 60 s.
(6) And taking out the silicon wafer, and drying the silicon wafer after deionized water cleaning, alkali washing, water washing, acid washing and water washing in sequence. Using 1% by weight ofCarrying out alkali washing on the KOH solution at the temperature of 25 ℃ for 60 s; with 40 wt% HF: 37 wt% HCl: h2And (3) carrying out acid washing on the mixed acid solution with the volume ratio of O-1: 2:4 at the temperature of 25 ℃ for 60 s.
The silicon wafer obtained in example 3 was subjected to reflectance analysis, and the test results are shown in table 3. As can be seen from Table 3, the silicon wafer textured by the method of the present invention can greatly reduce the reflectivity of the A surface of the silicon wafer, and the B surface can obtain a higher reflectivity.
TABLE 3
| Object | Test value | Testing instrument |
| The reflectivity of the surface of the silicon wafer treated in the step (4) | 6％ | D8 reflectivity tester |
| The reflectivity of the A surface of the silicon wafer treated in the step (6) | 16％ | D8 reflectivity tester |
| Reflectivity of B surface of silicon wafer treated in step (6) | 38％ | D8 reflectivity tester |
Example 4
The preparation method is basically the same as that of example 1, except that:
uniformly mixing 40 wt% of hydrofluoric acid, 65 wt% of nitric acid, an additive and deionized water to prepare 800mL of non-metal black silicon texturing solution; wherein the concentration of hydrofluoric acid is 300g/L, the concentration of nitric acid is 90g/L, and the volume consumption of the additive is 1 percent of the total volume of the texturing solution; the formula of the additive is as follows: the content of sodium dodecyl benzene sulfonate is 10 wt%, the content of organosilicon defoamer is 1 wt%, the content of sulfobenzothiazole is 0.1 wt%, and the balance is deionized water.
Example 5
The preparation method is basically the same as that of example 1, except that:
uniformly mixing 40 wt% of hydrofluoric acid, 65 wt% of nitric acid, an additive and deionized water to prepare 800mL of non-metal black silicon texturing solution; wherein the concentration of hydrofluoric acid is 360g/L, the concentration of nitric acid is 150g/L, and the volume consumption of the additive is 1 percent of the total volume of the texturing solution; the formula of the additive is as follows: the content of sodium dodecyl benzene sulfonate is 3 wt%, the content of organosilicon defoamer is 0.5 wt%, the content of sulfobenzothiazole is 10 wt%, and the balance is deionized water.
The silicon wafers obtained in example 4 and example 5 were subjected to reflectance analysis, and the test results are shown in Table 4.
TABLE 4
| Examples | The reflectivity of the surface of the silicon wafer treated in the step (6) | Testing instrument |
| 4 | 14％ | D8 reflectivity tester |
| 5 | 18％ | D8 reflectivity tester |
Examples 6 to 9
Examples 6 to 9 were prepared in substantially the same manner as in example 1 except that the differences were as shown in Table 5. The silicon wafers obtained in examples 6 to 9 were subjected to reflectance analysis (the test equipment used was a D8 reflectance tester), and the results are shown in Table 5.
TABLE 5
| Examples | Condition | The reflectivity of the surface of the silicon wafer treated in the step (6) |
| 6 | The addition amount of penetrant is 0 | 27％ |
| 7 | The addition amount of the corrosion inhibitor is 0 | 26％ |
| 8 | The addition amount of the penetrating agent is 15 percent | 22％ |
| 9 | The addition amount of the corrosion inhibitor is 15 percent | 24％ |
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (4)
1. A non-metal black silicon texturing method is characterized by comprising the following steps:
(1) providing a texturing solution; the wool making liquid comprises hydrofluoric acid and nitric acid, and also comprises an additive; the additive comprises the following components: the osmotic agent is selected from one or more of sodium dodecyl benzene sulfonate, polyoxyethylene nonyl phenyl ether and sodium dodecyl sulfate; the corrosion inhibitor is selected from one or more of phosphine carboxylic acid, thiobenzothiazole, benzotriazole and sulfonated lignin; defoaming agents; and a solvent; in the additive, the mass percentage of the penetrating agent is 0.01-10%, and the mass percentage of the corrosion inhibitor is 0.1-10%; the defoaming agent is an organic silicon defoaming agent, and the mass percentage of the defoaming agent in the additive is 0.001-1%; the volume of the additive accounts for 0.5-1.5% of the volume of the wool making liquid; the concentration of the hydrofluoric acid in the wool making liquid is 300-360 g/L, and the concentration of the nitric acid in the wool making liquid is 90-150 g/L;
(2) immersing a silicon wafer into the texturing solution; the silicon chip is a silicon chip with a damage layer or a silicon chip etched by acid liquor or alkali liquor;
(3) starting a light source to irradiate the surface of the silicon wafer; the light source is one or more of an LED light source, a halogen lamp light source, a xenon lamp light source or a laser light source;
(4) cleaning a silicon wafer by using deionized water;
(5) carrying out hole expanding treatment; immersing the silicon wafer into a hole expanding liquid for hole expanding treatment; the reaming liquid is an acidic corrosive liquid; the acidic corrosive liquid comprises hydrofluoric acid, nitric acid and water; wherein, the concentration of hydrofluoric acid is 50 to 90g/L, and the concentration of nitric acid is 360 to 600 g/L;
(6) and sequentially cleaning, alkaline washing, water washing, acid washing, water washing and drying the silicon wafer.
2. The texturing method according to claim 1, wherein, in the step (2),
and immersing the silicon wafer into the texturing liquid by adopting a horizontal placement method or a vertical placement method, wherein the silicon wafer is completely immersed into the texturing liquid or one surface of the silicon wafer is contacted with the texturing liquid while the other surface of the silicon wafer is contacted with air.
3. The texturing method of claim 1, wherein in step (3), the light source irradiates only one surface of the silicon wafer.
4. The texturing method according to claim 1, wherein in the step (6), the process conditions of the alkali washing include: performing alkaline washing by using 0.1 to 5 percent sodium hydroxide or potassium hydroxide solution, wherein the alkaline washing temperature is 10 to 40 ℃, and the time is 10 to 180 s; and
the pickling process conditions comprise: the method comprises the steps of pickling with a mixed solution of hydrofluoric acid, hydrochloric acid and water according to a volume ratio of 1:2:4, wherein the volume of the hydrofluoric acid is calculated by 40% of the hydrofluoric acid, the volume of the hydrochloric acid is calculated by 37% of the hydrochloric acid, the pickling temperature is 10-40 ℃, and the pickling time is 10-180 s.
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| CN104562011A (en) * | 2013-10-09 | 2015-04-29 | 上海太阳能工程技术研究中心有限公司 | Texturing auxiliary agent for polycrystalline silicon wafer and texturing process thereof |
| CN105154982A (en) * | 2015-07-08 | 2015-12-16 | 中国科学院宁波材料技术与工程研究所 | Polycrystalline black silicon texturization treatment fluid, polysilicon chip texturization method applying treatment fluid, and polycrystalline black silicon texturization product |
| CN106935669A (en) * | 2017-05-23 | 2017-07-07 | 江苏福吉食品有限公司 | A kind of etching method of the diamond wire section black silicon of polycrystalline |
| CN107268087A (en) * | 2017-06-23 | 2017-10-20 | 南京纳鑫新材料有限公司 | A kind of metal catalytic etching method for the polysilicon chip reflectivity for reducing Buddha's warrior attendant wire cutting |
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