CN104505430A - High-efficiency polycrystalline black silicon cell - Google Patents
High-efficiency polycrystalline black silicon cell Download PDFInfo
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- CN104505430A CN104505430A CN201410730326.XA CN201410730326A CN104505430A CN 104505430 A CN104505430 A CN 104505430A CN 201410730326 A CN201410730326 A CN 201410730326A CN 104505430 A CN104505430 A CN 104505430A
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- efficiency polycrystalline
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- 229910021418 black silicon Inorganic materials 0.000 title abstract description 6
- 239000000243 solution Substances 0.000 claims abstract description 33
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000007654 immersion Methods 0.000 claims abstract description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000008367 deionised water Substances 0.000 claims abstract description 8
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 8
- 239000011259 mixed solution Substances 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 claims abstract description 4
- 239000007924 injection Substances 0.000 claims abstract description 4
- 238000002360 preparation method Methods 0.000 claims description 8
- 239000003344 environmental pollutant Substances 0.000 claims description 7
- 231100000719 pollutant Toxicity 0.000 claims description 7
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000004377 microelectronic Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 230000009466 transformation Effects 0.000 description 3
- 238000010329 laser etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 206010003084 Areflexia Diseases 0.000 description 1
- 230000010748 Photoabsorption Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003916 acid precipitation Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 208000007578 phototoxic dermatitis Diseases 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000037351 starvation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
The invention relates to a high-efficiency polycrystalline black silicon cell. 50mL of hydrofluoric acid solution with concentration of 50%, 23mL of nitric acid solution with concentration of 60% and 15mL of hydrogen peroxide solution with concentration of 30% are uniformly mixed; a substrate is immersed by the mixed solution for 10-15s, and a surface machine cut damage layer is removed; and 30mL of sodium hydroxide solution with concentration of 45% is taken to clean surface contaminants, then the substrate is cleaned by deionized water and blown to be dried by nitrogen, finally the high-efficiency polycrystalline black silicon cell is prepared by performing plasma water immersion ion injection, and finally the detected average photoelectric conversion efficiency is 18.12% and efficiency of a part of cell pieces is 18.46%.
Description
Technical field
The present invention relates to the black silion cell of a kind of high-efficiency polycrystalline.
Background technology
Along with the development of science and technology, energy crisis also expands thereupon.The environmental problem such as greenhouse effect, acid rain that a large amount of consumptions of fossil class A fuel A cause, in the urgent need to worldwide exploitation with effectively utilize new forms of energy.Only there is the few places of the earth relative to oil and coal, there is not so-called solar energy starvation areas in solar energy, and therefore, effective utilization of solar energy becomes a kind of vast potential for future development.At present, the photovoltaic generation of the solar battery sheet of crystalline silicon is the mainstream technology of current photovoltaic art.And black silicon is with the sunken photosensitiveness of its material excellence, cause the extensive concern of photovoltaic circle.Spearchucker is a kind of novel semi-conductor photoelectric material with nanometer light trapping structure, the black silion cell almost areflexia made with black silicon material, and in wider spectral region, have excellent photo absorption performance, is conducive to the photoelectric conversion efficiency of assembly.
At present, the technology preparing black silicon has: (1) femtosecond laser etching method (2) metal assistant chemical solution etches method (3) reactive ion etching method etc.But femtosecond laser etching method this etching method are concerning the preparation technology of solar cell, and cost is too high.Though metal assistant chemical solution etches method is simple to operate, but its conversion efficiency is not high.But in reactive ion etching method this technology, energetic plasma is comparatively large to the damage of silicon face, and need expensive plasma vacuum equipment, the cell piece cost being applied to large-scale production is higher simultaneously.
Summary of the invention
The present invention is directed to now methodical drawback, propose the black silion cell of a kind of high-efficiency polycrystalline that a kind of conversion efficiency is high, cost is low.
In order to reach above-mentioned purpose, the concrete technical scheme of employing is:
(1) by concentration be 50% hydrofluoric acid solution 50mL, concentration is the salpeter solution 23mL of 60%, and concentration is the hydrogen peroxide solution 15mL of 30%, and three's solution is mixed;
(2) soak substrate with above-mentioned mixed solution, soak time is 10-15s, removes surperficial machine cut damage layer;
(3) get the sodium hydroxide solution 30mL clean surface pollutant that concentration is 45%, then clean substrate with deionized water, nitrogen dries up, and finally carries out plasma water immersion ion and injects the black silion cell of preparation high-efficiency polycrystalline.Described test piece is upper p-type polycrystalline silicon material, and resistivity is 1-3 Ω cm, and thickness is 250 microns, is of a size of 15.5*15.6.
Described plasma immersion ion injection device is the plasma immersion and ion implantation machine of Chinese Academy of Sciences Microelectronics Institute's development.
Application process of the present invention is: be the hydrofluoric acid solution 50mL of 50% by concentration, concentration is the salpeter solution 23mL of 60%, and concentration is the hydrogen peroxide solution 15mL of 30%, and three's solution is mixed; Soak substrate with above-mentioned mixed solution, soak time is 10-15s, removes surperficial machine cut damage layer; Get the sodium hydroxide solution 30mL clean surface pollutant that concentration is 45%, then clean substrate with deionized water, nitrogen dries up, and finally carries out plasma water immersion ion and injects the black silion cell of preparation high-efficiency polycrystalline.
Specific embodiments
The black silion cell of a kind of high-efficiency polycrystalline, method is:
(1) by concentration be 50% hydrofluoric acid solution 50mL, concentration is the salpeter solution 23mL of 60%, and concentration is the hydrogen peroxide solution 15mL of 30%, and three's solution is mixed;
(2) soak substrate with above-mentioned mixed solution, soak time is 10-15s, removes surperficial machine cut damage layer;
(3) get the sodium hydroxide solution 30mL clean surface pollutant that concentration is 45%, then clean substrate with deionized water, nitrogen dries up, and finally carries out plasma water immersion ion and injects the black silion cell of preparation high-efficiency polycrystalline.Described test piece is upper p-type polycrystalline silicon material, and resistivity is 1-3 Ω cm, and thickness is 250 microns, is of a size of 15.5*15.6.
Described plasma immersion ion injection device is the plasma immersion and ion implantation machine of Chinese Academy of Sciences Microelectronics Institute's development.
Example 1
With the hydrofluoric acid solution 50mL that concentration is 50%, concentration is the salpeter solution 23mL of 60%, and concentration is the hydrogen peroxide solution 15mL of 30%, and three's solution is mixed; Soak substrate with above-mentioned mixed solution, soak time is 10-15s, removes surperficial machine cut damage layer; Get the sodium hydroxide solution 30mL clean surface pollutant that concentration is 45%, then with deionized water, substrate is cleaned, nitrogen dries up, finally carry out plasma water immersion ion and inject the black silion cell of preparation high-efficiency polycrystalline, finally detect that average light photoelectric transformation efficiency is 18.12%, the efficiency of percentage of batteries sheet is 18.46%.
Example 2
With the hydrofluoric acid solution 50mL that concentration is 50%, concentration is the salpeter solution 23mL of 60%, and concentration is the hydrogen peroxide solution 15mL of 30%, and three's solution is mixed; Soak substrate with above-mentioned mixed solution, soak time is 13s, removes surperficial machine cut damage layer; Get the sodium hydroxide solution 30mL clean surface pollutant that concentration is 45%, then with deionized water, substrate is cleaned, nitrogen dries up, finally carry out plasma water immersion ion and inject the black silion cell of preparation high-efficiency polycrystalline, finally detect that average light photoelectric transformation efficiency is 18.12%, the efficiency of percentage of batteries sheet is 18.46%.
Example 3
With the hydrofluoric acid solution 50mL that concentration is 50%, concentration is the salpeter solution 23mL of 60%, and concentration is the hydrogen peroxide solution 15mL of 30%, and three's solution is mixed; Soak substrate with above-mentioned mixed solution, soak time is 15s, removes surperficial machine cut damage layer; Get the sodium hydroxide solution 30mL clean surface pollutant that concentration is 45%, then with deionized water, substrate is cleaned, nitrogen dries up, finally carry out plasma water immersion ion and inject the black silion cell of preparation high-efficiency polycrystalline, finally detect that average light photoelectric transformation efficiency is 18.12%, the efficiency of percentage of batteries sheet is 18.46%.
Claims (3)
1. the black silion cell of high-efficiency polycrystalline, is characterized in that:
(1) by concentration be 50% hydrofluoric acid solution 50mL, concentration is the salpeter solution 23mL of 60%, and concentration is the hydrogen peroxide solution 15mL of 30%, and three's solution is mixed;
(2) soak substrate with above-mentioned mixed solution, soak time is 10-15s, removes surperficial machine cut damage layer;
(3) get the sodium hydroxide solution 30mL clean surface pollutant that concentration is 45%, then clean substrate with deionized water, nitrogen dries up, and finally carries out plasma water immersion ion and injects the black silion cell of preparation high-efficiency polycrystalline.
2. the black silion cell of a kind of high-efficiency polycrystalline according to claim 1, is characterized in that: described test piece is upper p-type polycrystalline silicon material, and resistivity is 1-3 Ω cm, and thickness is 250 microns, is of a size of 15.5*15.6.
3. the black silion cell of a kind of high-efficiency polycrystalline according to claim 1, is characterized in that: described plasma immersion ion injection device is the plasma immersion and ion implantation machine of Chinese Academy of Sciences Microelectronics Institute's development.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410730326.XA CN104505430A (en) | 2014-12-04 | 2014-12-04 | High-efficiency polycrystalline black silicon cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410730326.XA CN104505430A (en) | 2014-12-04 | 2014-12-04 | High-efficiency polycrystalline black silicon cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104505430A true CN104505430A (en) | 2015-04-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410730326.XA Pending CN104505430A (en) | 2014-12-04 | 2014-12-04 | High-efficiency polycrystalline black silicon cell |
Country Status (1)
| Country | Link |
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| CN (1) | CN104505430A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106110844A (en) * | 2016-07-08 | 2016-11-16 | 林业城 | A kind of emission-control equipment purified for outdoor air |
| CN107275423A (en) * | 2017-06-06 | 2017-10-20 | 英利能源（中国）有限公司 | A kind of processing method for lifting black silion cell conversion efficiency |
| CN113380605A (en) * | 2021-06-04 | 2021-09-10 | 中国电子科技集团公司第四十四研究所 | Black silicon manufacturing method based on mechanical grinding auxiliary corrosion |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101880914A (en) * | 2010-05-25 | 2010-11-10 | 中国科学院微电子研究所 | Method for preparing black silicon by plasma immersion ion implantation |
| CN101950779A (en) * | 2010-09-07 | 2011-01-19 | 中国科学院微电子研究所 | Method for preparing solar cell in situ |
| CN103666784A (en) * | 2013-11-29 | 2014-03-26 | 孙爱玲 | Pre-cleaning agent for silicon wafer |
-
2014
- 2014-12-04 CN CN201410730326.XA patent/CN104505430A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101880914A (en) * | 2010-05-25 | 2010-11-10 | 中国科学院微电子研究所 | Method for preparing black silicon by plasma immersion ion implantation |
| CN101950779A (en) * | 2010-09-07 | 2011-01-19 | 中国科学院微电子研究所 | Method for preparing solar cell in situ |
| CN103666784A (en) * | 2013-11-29 | 2014-03-26 | 孙爱玲 | Pre-cleaning agent for silicon wafer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106110844A (en) * | 2016-07-08 | 2016-11-16 | 林业城 | A kind of emission-control equipment purified for outdoor air |
| CN106110844B (en) * | 2016-07-08 | 2019-02-19 | 唐山德业节能环保科技有限公司 | A kind of emission-control equipment for outdoor air purification |
| CN107275423A (en) * | 2017-06-06 | 2017-10-20 | 英利能源（中国）有限公司 | A kind of processing method for lifting black silion cell conversion efficiency |
| CN107275423B (en) * | 2017-06-06 | 2018-10-12 | 英利能源（中国）有限公司 | A kind of processing method promoting black silion cell transfer efficiency |
| CN113380605A (en) * | 2021-06-04 | 2021-09-10 | 中国电子科技集团公司第四十四研究所 | Black silicon manufacturing method based on mechanical grinding auxiliary corrosion |
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Application publication date: 20150408 |