CN204315613U - A kind of lamination solar cell - Google Patents
A kind of lamination solar cell Download PDFInfo
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- CN204315613U CN204315613U CN201420778520.0U CN201420778520U CN204315613U CN 204315613 U CN204315613 U CN 204315613U CN 201420778520 U CN201420778520 U CN 201420778520U CN 204315613 U CN204315613 U CN 204315613U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
A kind of lamination solar cell described in the utility model, comprise end battery, metal bonding layer, top battery successively and be arranged at the electrode on battery of the described end and top battery, battery of the described end is monocrystalline silicon battery, described top battery is copper indium gallium selenide cell, realizes metal bonding between described monocrystalline silicon battery and described copper indium gallium selenide cell by described metal bonding layer; Lamination solar cell provided by the utility model carries out lamination by monocrystalline silicon battery and copper indium gallium selenide cell to form, the energy gap of monocrystalline silicon battery is 1.1eV, and the energy gap of copper indium gallium selenide cell can change within the scope of 1.04eV-1.67eV, prepared laminated cell can widen these two kinds of batteries greatly to the absorbing wavelength scope of sunlight, improves battery conversion efficiency; Meanwhile, monocrystalline silicon battery is as end battery, and the collection of long wave photo-generated carrier will be better, and the efficiency of laminated cell can be higher, and the comparable monocrystalline silicon single junction cell of its photoelectric conversion rate improves 5%-20%.
Description
Technical field
The utility model relates to technical field of solar batteries, is specifically related to a kind of lamination solar cell.
Background technology
Along with the development of economic society, the demand of people to the energy also grows with each passing day.Because conventional fossil energy reserve is limited, contaminated environment, therefore, the clean energy resource that development utilization is new just becomes the unique channel solving conventional energy resource scarcity, environmental pollution.Because solar energy is inexhaustible, cleanliness without any pollution is the most continuable the most desirable regenerative resource in future.Solar cell directly changes luminous energy into electric energy, is a kind of important way of Solar use.
Modern solar cell truly originates in U.S.'s Bell Laboratory in 1954, and from discovery monocrystal silicon PN junction photovoltaic effect, the efficiency to monocrystaline silicon solar cell reaches 6%, has only used less than year, has started new era of solar cell.Experienced by semicentennial development, the conversion efficiency of current monocrystalline silicon battery reaches 25%, and the conversion efficiency of polycrystal silicon cell is 20.4%, and technology maturation, start scale of mass production, as crystal silicon solar energy battery occupies more than 80% of photovoltaic market.Copper-indium-galliun-selenium film solar cell has the advantages such as the high absorption coefficient of light, high transformation efficiency, adjustable energy gap, high stability, stronger capability of resistance to radiation, current conversion efficiency exceedes polycrystal silicon cell, reach 21.7%, and still constantly obtaining new breakthrough, be a kind of thin-film solar cells having very much development potentiality.
Around the optoelectronic transformation efficiency improving solar cell, Chinese patent literature CN 102142484 discloses a kind of polysilicon/Copper Indium Gallium Selenide laminated cell, and upper battery is copper indium gallium selenide cell, and lower battery is polycrystal silicon cell, in conjunction with polycrystal silicon cell and Copper Indium Gallium Selenide (Cu (In, Ga) Se
2be called for short CIGS) feature of battery, lamination has been carried out to the two, but there are the following problems to adopt polysilicon and Copper Indium Gallium Selenide to carry out lamination:
(1) because polysilicon inside exists more grain boundary defects, reduce minority carrier lifetime, affect carrier transport and collection, make the conversion efficiency of polycrystal silicon cell itself high less than monocrystalline silicon battery.
(2) adopt ZnO as the bonded layer of polycrystal silicon cell and copper indium gallium selenide cell in CN 102142484, because ZnO is unstable at high operating temperatures, follow-up prepare CuInGaSe absorbed layer time, need hot environment, ZnO decomposition and Zn atom can be impelled to spread to Copper Indium Gallium Selenide layer, form impurity defect, affect battery performance.
Utility model content
For this reason, the utility model is in order to optimize solar cell composition further, and improve the photoelectric conversion efficiency of battery, the utility model provides a kind of battery adopting monocrystalline silicon battery and copper indium gallium selenide cell to carry out lamination.
Adopt technical scheme as described below:
A kind of lamination solar cell, comprise end battery, metal bonding layer, top battery successively and be arranged at the electrode on battery of the described end and top battery, battery of the described end is monocrystalline silicon battery, described top battery is copper indium gallium selenide cell, realizes metal bonding between described monocrystalline silicon battery and described copper indium gallium selenide cell by described metal bonding layer.
Described metal bonding layer is metal M o rete.
The thickness of described metal M o rete is 0.1 ~ 20nm.
The thickness of described metal M o rete is 10nm.
Described copper indium gallium selenide cell comprises CIGS absorbed layer, CdS resilient coating and Window layer, and described monocrystalline silicon battery comprises P-type layer and N+ type layer, and described metal M o rete and described N+ type layer and CIG S absorbed layer carry out metal bonding.
The thickness of described CIGS absorbed layer is 500-3000nm; The thickness of described CdS resilient coating is 30 ~ 100nm.
Described Window layer comprises intrinsic Window layer and conducting window layer, and described intrinsic window layer thickness is 30 ~ 100nm, and described conductive window layer thickness is 200 ~ 1500nm.
Described electrode is Ni/Al electrode, and it is arranged on described monocrystalline silicon battery and conducting window layer, and the thickness of described electrode is 500 ~ 4000nm.
The utility model has following beneficial effect relative to prior art:
Lamination solar cell provided by the utility model carries out lamination by monocrystalline silicon battery and copper indium gallium selenide cell to form, the energy gap of monocrystalline silicon battery is 1.1eV, and the energy gap of copper indium gallium selenide cell can change within the scope of 1.04eV-1.67eV, using monocrystalline silicon battery as end battery, the copper indium gallium selenide cell of large band gap is as top battery, the metal M o rete making the two realize metal bonding is provided with between end battery and top battery, prepared laminated cell can widen these two kinds of batteries greatly to the absorbing wavelength scope of sunlight, improves battery conversion efficiency; Meanwhile, monocrystalline silicon battery is as end battery, and the collection of long wave photo-generated carrier will be better, the efficiency of laminated cell can be higher, the comparable monocrystalline silicon single junction cell of photoelectric conversion rate of the present utility model improves 5%-20%, and preparation technology is simple, is conducive to the reduction of production cost.
Accompanying drawing explanation
In order to make content of the present utility model be more likely to be clearly understood, below according to specific embodiment of the utility model also by reference to the accompanying drawings, the utility model is described in further detail.
Fig. 1 is monocrystaline silicon solar cell structural representation, in figure: 1-monocrystalline silicon battery, 101-P type layer, 102-N+ type layer.
Fig. 2 is monocrystalline silicon/CIGS lamination solar cell structural representation.
In figure: 2-copper indium gallium selenide cell, 201-CIGS absorbed layer, 202-CdS resilient coating, 203-intrinsic Window layer, 204-conducting window layer, 3-metal M o rete; 4-electrode.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, the utility model execution mode is described in further detail.
As shown in Figure 2, the utility model provides a kind of lamination solar cell, comprises end battery, metal bonding layer, top battery and electrode successively, and electrode 4 is wherein arranged on top battery and end battery.End battery is wherein monocrystalline silicon battery 1, and top battery is copper indium gallium selenide cell 2, and the two is carried out metal bonding by the metal bonding layer between monocrystalline silicon battery 1 and Copper Indium Gallium Selenide (CIG S) battery 2.Here metal bonding layer preferable alloy Mo rete 3, metal M o rete 3 wherein combines with the N+ type layer 102 of monocrystalline silicon battery 1.The thickness of metal M o rete 3 is 0.1-20nm; The preferred thickness of the metal M o rete 3 that the utility model adopts is 10nm.
Below the preparation method of laminated cell provided by the utility model is described.
First prepare monocrystalline silicon battery 1, monocrystalline silicon battery 1 comprises P-type layer 101 and N+ type layer 102, and the N+ type layer 102 of monocrystalline silicon battery 1 deposits one deck nano metal Mo rete 3; Then grow CIG S absorbed layer 201 and subsequent layers film, realize the metal bonding of two kinds of batteries, monocrystalline silicon battery 1 is as end battery, and copper indium gallium selenide cell 2, as top battery, finally, prepares output electrode 4 in the upper and lower surface of laminated cell.
Concrete preparation process is:
Step one, employing p type single crystal silicon sheet prepare monocrystalline silicon battery 1:
(1) clean: clean monocrystalline silicon piece with high purity water or organic solvent, then use acid (or alkali) solution by the damage layer removing on silicon chip surface, damage layer thickness is 30 ~ 50 μm.
(2) matte is prepared: with aqueous slkali, anisotropic etch is carried out to monocrystalline silicon piece, prepare matte at monocrystalline silicon sheet surface.
(3) phosphorus diffusion: employing coating source (or liquid source, or solid-state nitration phosphorus sheet source) spread, make PN junction, junction depth is generally 0.3 ~ 0.5 μm.
(4) dephosphorization silex glass: adopt chemical corrosion method, namely adopts acid solution to remove phosphorosilicate glass.
Step 2, prepare copper indium gallium selenide cell 2:
(1) adopt the method for thermal evaporation or sputtering, on the N+ type layer 102 of monocrystalline silicon battery 1, deposit thickness is the metal M o rete 3 of 0.1 ~ 20nm.
(2) adopt evaporation or sputtering and selenization technique method to prepare CIGS absorbed layer 201, thickness is 500 ~ 3000n m.
(3) adopt chemical bath method or radio frequency (RF) magnetron sputtering method to prepare CdS resilient coating 202, thickness is 30 ~ 100nm.
(4) adopt magnetron sputtering method deposition i-ZnO intrinsic Window layer 203, thickness is 30 ~ 100nm.
(5) magnetically controlled sputter method making ZnO is adopted: Al conducting window layer 204, thickness is 200 ~ 1500nm.
Step 3, adopt evaporation deposition N i/Al electrode 4 in the upper and lower surface of laminated cell, thickness is 500 ~ 4000nm, obtains laminated cell.
Embodiment
Step one, employing p type single crystal silicon sheet prepare monocrystalline silicon battery 1, and it is made up of P-type layer 101 and N+ type layer 102, as shown in Figure 1:
(1) clean: adopt acetone soln the dust that monocrystalline silicon piece stains, borings, grease etc. to be got rid of, then removed by monocrystalline silicon sheet surface cutting damage layer by NaOH solution, thickness is 30 ~ 50 μm.
(2) matte is prepared: the NaOH weak solution being about 1% by concentration carries out anisotropic etch to monocrystalline silicon piece, and corrosion temperature is 80 DEG C, prepares matte at monocrystalline silicon sheet surface.
(3) phosphorus diffusion: use N under 850 DEG C of high temperature
2by POCl
3bring reaction vessel into carry out phosphorus diffusion to make the PN junction depth be made up of P-type layer 101 and N+ type layer 102 be 0.4 μm.
(4) remove phosphorosilicate glass: monocrystalline silicon piece is put and soaks in a solution of hydrofluoric acid, remove phosphorosilicate glass.
Step 2, on the N+ type layer 102 of monocrystalline silicon battery 1, prepare copper indium gallium selenide cell 2:
(1) monocrystalline silicon battery 1 pure nitrogen gas prepared dries up and loads in magnetron sputtering vacuum chamber, and dehydration is degassed.
(2) treat that vacuum degree is better than 1 × 10
-3after Pa, adopt the method for sputtering, the metal M o rete 3 of deposit thickness 10nm on the N+ type layer 102 of monocrystalline silicon battery 1.
(3) adopt three-step approach coevaporation method to prepare CIGS absorbed layer 201, first step underlayer temperature is 350 DEG C, and second and third step underlayer temperature is 550 DEG C, and film thickness is 1.0 μm.
(4) adopt chemical bath legal system for CdS resilient coating 202, bath temperature is 80 DEG C, and film thickness is 50nm.
(5) adopt magnetron sputtering method deposition intrinsic Window layer 203, i.e. i-ZnO layer, background vacuum is better than 1 × 10
-3pa, thickness is 80nm.
(6) adopt magnetically controlled sputter method to prepare conducting window layer 204, i.e. ZnO:Al, background vacuum is better than 1 × 10
-3pa, thickness is 800nm.
Step 3, upper and lower surface at laminated cell, adopt evaporation deposition Ni/Al electrode 4, thickness is 3000nm, obtains monocrystalline silicon/CIGS stacked solar cell, cascade solar cell, as shown in Figure 2.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection range of the present utility model.
Claims (8)
1. a lamination solar cell, comprise end battery, metal bonding layer, top battery successively and be arranged at the electrode on battery of the described end and top battery, it is characterized in that, battery of the described end is monocrystalline silicon battery, described top battery is copper indium gallium selenide cell, realizes metal bonding between described monocrystalline silicon battery and described copper indium gallium selenide cell by described metal bonding layer.
2. lamination solar cell according to claim 1, is characterized in that, described metal bonding layer is metal M o rete.
3. lamination solar cell according to claim 2, is characterized in that, the thickness of described metal M o rete is 0.1 ~ 20nm.
4. lamination solar cell according to claim 3, is characterized in that, the thickness of described metal M o rete is 10nm.
5. according to the arbitrary described lamination solar cell of claim 2-4, it is characterized in that, described copper indium gallium selenide cell comprises CIGS absorbed layer, CdS resilient coating and Window layer, described monocrystalline silicon battery comprises P-type layer and N+ type layer, and described metal M o rete and described N+ type layer and CIGS absorbed layer carry out metal bonding.
6. lamination solar cell according to claim 5, is characterized in that, the thickness of described CIGS absorbed layer is 500-3000nm; The thickness of described CdS resilient coating is 30 ~ 100nm.
7. lamination solar cell according to claim 6, is characterized in that, described Window layer comprises intrinsic Window layer and conducting window layer, and described intrinsic window layer thickness is 30 ~ 100nm, and described conductive window layer thickness is 200 ~ 1500nm.
8. lamination solar cell according to claim 7, is characterized in that, described electrode is Ni/Al electrode, and it is arranged on described monocrystalline silicon battery and conducting window layer, and the thickness of described electrode is 500 ~ 4000nm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420778520.0U CN204315613U (en) | 2014-12-10 | 2014-12-10 | A kind of lamination solar cell |
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|---|---|---|---|
| CN201420778520.0U CN204315613U (en) | 2014-12-10 | 2014-12-10 | A kind of lamination solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106469763A (en) * | 2016-11-04 | 2017-03-01 | 常熟理工学院 | A kind of stacked solar cell, cascade solar cell and preparation method thereof |
| CN106856212A (en) * | 2015-12-07 | 2017-06-16 | 财团法人工业技术研究院 | solar cell module |
-
2014
- 2014-12-10 CN CN201420778520.0U patent/CN204315613U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106856212A (en) * | 2015-12-07 | 2017-06-16 | 财团法人工业技术研究院 | solar cell module |
| CN106469763A (en) * | 2016-11-04 | 2017-03-01 | 常熟理工学院 | A kind of stacked solar cell, cascade solar cell and preparation method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: BEIJING CHUANGYU TECHNOLOGY Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: BEIJING HANERGY CHUANGYU S&T Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: Beijing Chuangyu Technology Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210129 Address after: Unit 611, unit 3, 6 / F, building 1, yard 30, Yuzhi East Road, Changping District, Beijing 102208 Patentee after: Zishi Energy Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right |