CN104143579A - Antimony-base compound thin film solar cell and manufacturing method thereof - Google Patents

Antimony-base compound thin film solar cell and manufacturing method thereof Download PDF

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CN104143579A
CN104143579A CN201310163431.5A CN201310163431A CN104143579A CN 104143579 A CN104143579 A CN 104143579A CN 201310163431 A CN201310163431 A CN 201310163431A CN 104143579 A CN104143579 A CN 104143579A
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deposition
layer
thickness
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solar cell
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唐江
韩珺
杨波
周英
王亮
刘新胜
冷美英
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses an antimony-base compound thin film solar cell and a manufacturing method of the antimony-base compound thin film solar cell and belongs to the manufacturing field of photoelectric material and thin film solar cells. The problems that in an existing compound thin film solar cell, needed material is little in the earth crust, high in price and toxic to the human body or complex in production technology are solved. The antimony-base compound thin film solar cell comprises a substrate, a back electrode layer, a P-type absorption layer, an N-type buffering layer, an oxide thin film window layer and metal gate electrodes in a sequential deposition mode. The P-type absorption layer is made of CuXSbybetaZ material, wherein beta is S or Se. The material of the P-type absorption layer is selected from high-abundance elements in the earth crust, wherein the material is rich in resource and environmentally friendly because no toxic components are contained, the range of the energy gap of the elements is about 0.5 ev-2.5 ev, the spectral response range is wide, the light absorption coefficient is up to 105 cm-1, and therefore the compound thin film solar battery composed of the material has excellent photovoltaic performance and is environmentally friendly, and low-cost production is expected to be achieved.

Description

A kind of antimony base compound film solar cell and preparation method thereof
Technical field
The invention belongs to photoelectric material and thin-film solar cells preparation field, be specifically related to a kind of antimony base compound film solar cell and preparation method thereof.
Background technology
Along with expanding economy, demand for energy increases severely, and the problem of environmental pollution that the exhaustion of non-renewable energy resources and combustion of fossil fuel cause becomes more outstanding, and solar cell receives a lot of concerns as a kind of new forms of energy of cleanliness without any pollution.Solar cell is that a kind of photovoltaic effect that utilizes is converted into solar energy the device of electric energy.Multi-element compounds thin-film solar cells because its material usage is few, low, the low light level of preparation power consumption and high-temperature behavior is good, lighter weight, can make the advantages such as flexible battery, range of application be wider and be subject to more attention.Existing Copper Indium Gallium Selenide (CIGS) thin-film solar cells and cadmium telluride (CdTe) thin-film solar cells realize industrialization substantially, but in copper-indium-galliun-selenium film solar cell, indium and gallium are expensive, be unfavorable for low-cost generating, its original patent is grasped by the U.S., Germany and Japanese company substantially simultaneously, see Jackson P, et al. " New world record efficiency for Cu (In, Ga) Se 2thin-film solar cells beyond20% " (Progress In Photovoltaics:Research and Applications2011; 19:894-897); And see US Patent No. 20130037106A1:Precursors and uses for cis and cigs photovoltaics.In cadmium telluride (CdTe) thin-film solar cells, cadmium has severe toxicity, and widespread adoption has very large environmental risk; Simultaneously its manufacturing technology of cadmium telluride solar cell is substantially by the first solar company monopolizing of the U.S., see Wu X, et al. " 16.5%-efficient CdS/CdTe polycrystalline thin film solar cell " (Conference Proceedings, 17th European Photovoltaic Solar Energy Conference, Munich, 22-26October2001; 995-1000); And see US Patent No. 20130074912A1:Band structure engineering for improved efficiency of cdte based photovoltaics.Nearest study hotspot copper zinc tin sulfur selenium (CZTSSe) solar cell is Quinary system, Thermodynamically stable interval is little, the control of film composition and lattice defect is too complicated, cause in material impurity and defect too much, the further lifting difficulty of efficiency, the original patent of copper-zinc-tin-sulfur Se solar cell is also grasped by Japan and u s company simultaneously, see Teodor K.Todorov, et al. " Beyond11%Efficiency:Characteristics of State-of-the-Art Cu2ZnSn (S, Se) 4Solar Cells " (Adv.Energy Mater.2012), and see US Patent No. 20130074911A1:Photovoltaic Device Including a CZTS Absorber Layer and Method of Manufacturing the Same.
Summary of the invention
The invention provides a kind of antimony base compound film solar cell and preparation method thereof, solve the problem of less, expensive, poisonous to human body or the complex manufacturing of material requested contains in existing compound film solar cell (CIGS, CdTe, CZTSSe) element content in the earth's crust.
A kind of antimony base compound film solar cell provided by the present invention, comprises substrate and the dorsum electrode layer, P type absorbed layer, N-type resilient coating, sull Window layer and the metal gate electrode that deposit successively thereon, it is characterized in that:
Described P type absorbed layer is Cu xsb yβ zmaterial, wherein β is S or Se, X=0～3, Y=1～2, Z=2～4.
Described antimony base compound film solar cell, described substrate can be glass, Al, Cu, stainless steel or polyimide material; Described dorsum electrode layer can be Mo, Cu, Au, Ni, Ag, Al, SnO 2: F or In 2o 3: Sn material; Described N-type resilient coating can be CdS, Zn (S, O), In 2s 3, In 2(S, O, OH) 3, TiO 2or ZnO material; Described sull Window layer can be In 2o 3: Sn, ZnO:Al, ZnO:B or SnO 2: F material; Described metal gate electrode can be Mo, Cu, Au, Ni, Ag or Al material or their binary combination, and described binary combination for depositing another kind of metal level on a kind of metal level again.
Described antimony base compound film solar cell, described substrate thickness can be 0.01cm～3cm; Described dorsum electrode layer thickness can be 100nm～1000nm; Described P type absorber thickness can be 0.2 μ m～3 μ m; Described N-type buffer layer thickness can be 30nm～200nm; Described sull Window layer thickness can be 100nm～1000nm; Described metal gate electrode thickness can be 1 μ m～10 μ m.
Described antimony base compound film solar cell, described metal gate electrode is shaped as the mesh-like of filament composition or the spiral electrode that filament forms.
The preparation method of described antimony base compound film solar cell, comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step, it is characterized in that:
One, deposition dorsum electrode layer step: adopt magnetron sputtering, thermal evaporation, electron beam evaporation or electrochemical deposition method at substrate (1) surface deposition dorsum electrode layer (2);
Two, deposition P type absorbed layer step: adopt magnetron sputtering, thermal evaporation, pulsed laser deposition, electrochemical deposition or solution coating method, at the upper deposition of dorsum electrode layer (2) P type absorbed layer (3);
Three, deposition N-type resilient coating step: adopt magnetron sputtering, thermal evaporation, pulsed laser deposition, electrochemical deposition, chemical bath method or solution coating method, at the upper deposition of P type absorbed layer (3) N-type resilient coating (4);
Four, deposition oxide film window layer step: adopt magnetron sputtering or thermal evaporation, at the upper deposition oxide film window layer (5) of N-type resilient coating (4);
Five, plated metal gate electrode step: adopt magnetron sputtering, thermal evaporation, spraying or silk screen print method, go up plated metal gate electrode (6) in sull Window layer (5), thereby make the antimony base compound film solar cell of PN junction structure.
The preparation method of described antimony base compound film solar cell, described substrate (1) thickness can be 0.01cm～3cm; Described dorsum electrode layer (2) thickness can be 100nm～1000nm; Described P type absorbed layer (3) thickness can be 0.2 μ m～3 μ m; Described N-type resilient coating (4) thickness can be 30nm～200nm; Described sull Window layer (5) thickness can be 100nm～1000nm; Described metal gate electrode (6) thickness can be 1 μ m～10 μ m.
The preparation method of described antimony base compound film solar cell, the spiral electrode that described metal gate electrode shape can form for mesh-like or the filament of filament composition.
In the present invention, the various materials that can form P type absorbed layer are all selected from the higher element of abundance in the earth's crust, aboundresources and environmentally friendly because not containing toxic component, and their energy gap scope is about 0.5～2.5ev, spectral response range is wider, and absorptivity is up to 10 5cm -1thereby, become and there is the low cost of development potentiality, free of contamination novel thin film solar cell material.Along with scientific and technical development, P type absorbed layer can be prepared by several different methods such as magnetron sputtering, thermal evaporation, pulsed laser deposition, electrochemical deposition or solution coating methods, and the compound film solar cell consisting of it has advantages of excellent photovoltaic performance and environmentally friendly and be expected to realize low-cost production.
Accompanying drawing explanation
Fig. 1 is the cross sectional representation of antimony base compound film solar cell of the present invention;
Fig. 2 is P type absorbed layer material C uSbS in embodiment 1 2surface topography under electronic scanner microscope on back electrode Mo;
Fig. 3 is P type absorbed layer material C uSbS in embodiment 1 2x ray diffracting spectrum on back electrode Mo;
Fig. 4 is P type absorbed layer material C uSbS in embodiment 1 2cyclic voltammetry curve on back electrode Mo;
Fig. 5 is P type absorbed layer material C uSbS in embodiment 1 2tGA collection of illustrative plates;
Fig. 6 is the measured efficiency chart of solar cell that embodiment 1 prepares;
Fig. 7 is P type absorbed layer material C uSbS in embodiment 2 2at back electrode SnO 2: the surface topography under the electronic scanner microscope on F;
Fig. 8 is P type absorbed layer material C uSbS in embodiment 2 2at back electrode SnO 2: the cyclic voltammetry curve on F;
Fig. 9 is P type absorbed layer material C uSbS in embodiment 2 2at back electrode SnO 2: the Raman collection of illustrative plates on F;
Figure 10 is P type absorbed layer material C uSbS in embodiment 2 2at back electrode SnO 2: F upper measurement transmission collection of illustrative plates the energy gap calculating by transmission collection of illustrative plates;
Figure 11, Figure 12, Figure 13, Figure 14 are P type absorbed layer material C uSbS in embodiment 2 2at back electrode SnO 2: the XPS collection of illustrative plates on F;
Figure 15 be in embodiment 3 N-type cushioning layer material Zn (S, O) at P type absorbed layer CuSbS 2on electronic scanner microscope under surface topography;
Figure 16 be in embodiment 3 N-type cushioning layer material Zn (S, O) at P type absorbed layer CuSbS 2upper measurement transmission collection of illustrative plates the energy gap calculating by transmission collection of illustrative plates;
Figure 17 is P type absorbed layer material C uSbSe in embodiment 4 2surface topography under electronic scanner microscope on back electrode Mo;
Figure 18 is P type absorbed layer material Sb in embodiment 6 2s 3surface topography under electronic scanner microscope on back electrode Mo;
Figure 19 is P type absorbed layer material Sb in embodiment 6 2s 3x ray diffracting spectrum on back electrode Mo;
Figure 20 is P type absorbed layer material Sb in embodiment 6 2s 3raman collection of illustrative plates on back electrode Mo;
Figure 21 is P type absorbed layer material Sb in embodiment 6 2s 3tGA collection of illustrative plates;
Figure 22 is P type absorbed layer material Sb in embodiment 6 2s 3transmission curve on back electrode Mo;
Figure 23 is P type absorbed layer material Sb in embodiment 6 2s 3light absorption curve on back electrode Mo;
Figure 24 is P type absorbed layer material Sb in embodiment 9 2se 3surface topography under electronic scanner microscope on back electrode Mo;
Figure 25 is P type absorbed layer material Sb in embodiment 9 2se 3x ray diffracting spectrum on back electrode Mo;
Figure 26 is P type absorbed layer material Sb in embodiment 9 2se 3tGA collection of illustrative plates;
Figure 27 is P type absorbed layer material C u in embodiment 11 3sbS 4surface topography under electronic scanner microscope on back electrode Mo;
Figure 28 is P type absorbed layer material C u in embodiment 11 3sbS 4x ray diffracting spectrum on back electrode Mo;
Figure 29 is P type absorbed layer material C u in embodiment 11 3sbS 4tGA collection of illustrative plates;
Figure 30 is P type absorbed layer material C u in embodiment 13 3sbS 3x ray diffracting spectrum on back electrode Mo.
Embodiment
Below in conjunction with drawings and Examples to the detailed description of the invention.
As shown in Figure 1, antimony base compound film solar cell of the present invention, comprises substrate 1 and the dorsum electrode layer 2, P type absorbed layer 3, N-type resilient coating 4, sull Window layer 5 and the metal gate electrode 6 that deposit successively thereon.
Embodiment 1, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt magnetron sputtering method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is glass, and thickness is 1.8cm;
Described dorsum electrode layer is Mo, and thickness is 800nm;
Two, deposition P type absorbed layer step: adopt solution coating method, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is CuSbS 2, thickness is 1.5 μ m;
Adopt solution coating method that Cu: Sb: S is dissolved in and in hydrazine, forms CuSbS according to the ratio of 1: 1: 7 2presoma, with film applicator by CuSbS 2presoma divides five layers to be spin-coated on dorsum electrode layer 2, and thickness is 1.5 μ m, and presoma is placed in to nitrogen atmosphere, 350 ℃ of annealing 5 minutes, forms deposition P type absorbed layer 3; Under electronic scanner microscope, as shown in Figure 2, as shown in Figure 3, as shown in Figure 4, TGA collection of illustrative plates as shown in Figure 5 for cyclic voltammetry curve for X ray diffracting spectrum for the surface topography of the present embodiment P type absorbed layer;
Three, deposition N-type resilient coating step: adopt chemical bath method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is CdS material, and thickness is 100nm;
The thiourea solution of configuration 1.5M, the cadmium sulfate solution of 0.015M, the water temperature for the treatment of the water-bath circulatory system reaches 65 ℃, adds successively 366ml deionized water, 50ml cadmium sulfate solution, 25ml thiourea solution, 65.2ml ammoniacal liquor, rapidly slice, thin piece is immersed in the water and is fixed, open stirring, react 12 minutes, wait to stop reaction, slice, thin piece is proposed and steep in deionized water 2 minutes, with blowing dry plate, on P type absorbed layer 3, deposit N-type resilient coating 4;
Four, deposition oxide film window layer step: adopt magnetron sputtering method, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:Al material, and thickness is 500nm;
Adopt the Al doping ZnO target that diameter is 100mm, cavity is evacuated to vacuum 5 * 10 -4pa, treats that substrate temperature is heated to 150 degree, working gas Ar: O 2flow-rate ratio is 100: 0.2, and operating air pressure is 0.3Pa, when radio-frequency power is 200W, deposits 45 minutes, and then inflated with nitrogen, treats that substrate is cooled to room temperature and is taken out, i.e. deposition oxide film window layer 5 on N-type resilient coating 4;
Five, plated metal gate electrode step: adopt silk screen print method, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode (6) is Ag material, thickness is 8 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby the antimony base compound film solar cell that makes PN junction structure, its efficiency curve diagram as shown in Figure 6.
Embodiment 2, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt magnetron sputtering method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is glass, and thickness is 3cm;
Described dorsum electrode layer is SnO 2: F; Thickness is 1000nm;
Two, deposition P type absorbed layer step: adopt solution coating method, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is CuSbS 2, thickness is 1.5 μ m; Surface topography under electronic scanner microscope as shown in Figure 7; Cyclic voltammetry curve as shown in Figure 8; Raman collection of illustrative plates as shown in Figure 9; The energy gap calculating by transmission curve as shown in figure 10; XPS collection of illustrative plates is as shown in Figure 11, Figure 12, Figure 13, Figure 14;
Three, deposition N-type resilient coating step: adopt chemical bath method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is CdS material, and thickness is 100nm;
Four, deposition oxide film window layer step: adopt magnetron sputtering method, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:Al material, and thickness is 500nm;
Five, plated metal gate electrode step: adopt silk screen print method, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Ag material, thickness is 10 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby make the antimony base compound film solar cell of PN junction structure.
Embodiment 3, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt magnetron sputtering method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is polyimides, and thickness is 0.01cm;
Described dorsum electrode layer is In 2o 3: Sn; Thickness is 100nm;
Two, deposition P type absorbed layer step: adopt thermal evaporation, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is CuSbS 2, thickness is 0.8 μ m;
Three, deposition N-type resilient coating step: adopt chemical bath method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is Zn (S, O) material, and thickness is 140nm;
The zinc acetate solution of configuration 0.2M, the thiourea solution of 0.8M, the water temperature for the treatment of the water-bath circulatory system reaches 80 ℃, adds successively 200ml zinc acetate solution, 14.7g trisodium citrate, 100ml thiourea solution, 50ml ammoniacal liquor, 150ml deionized water, rapidly slice, thin piece is immersed in the water and is fixed, open stirring, react 3 hours, wait to stop reaction, slice, thin piece is proposed and steep in deionized water 2 minutes, with blowing dry plate, on P type absorbed layer 3, deposit N-type resilient coating 4; Surface topography under electronic scanner microscope as shown in figure 15; The energy gap calculating by transmission curve as shown in figure 16
Four, deposition oxide film window layer step: adopt thermal evaporation, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:Al material, and thickness is 100nm;
Five, plated metal gate electrode step: adopt thermal evaporation, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Al material, thickness is 1 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby make the antimony base compound film solar cell of PN junction structure.
In the present embodiment, described metal gate electrode layer (6) can be the binary combination of Al and Ag, at thickness, be on the Al metal level of 1 μ m again deposit thickness be the Ag metal level of 2 μ m.
Embodiment 4, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt magnetron sputtering method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is glass, and thickness is 1.8cm;
Described dorsum electrode layer is Mo; Thickness is 800nm;
Two, deposition P type absorbed layer step: adopt solution coating method, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is CuSbSe 2, thickness is 2 μ m;
Adopt solution coating method that Cu: Sb: Se is dissolved in and in hydrazine, forms CuSbSe according to the ratio of 1: 1: 7 2presoma, with film applicator by CuSbSe 2presoma divides five layers to be spin-coated on dorsum electrode layer 2, and thickness is 2 μ m, and presoma is placed in to nitrogen atmosphere, at 450 ℃, adds Se annealing 5 minutes, forms deposition P type absorbed layer 3; Surface topography under electronic scanner microscope as shown in figure 17;
Three, deposition N-type resilient coating step: adopt chemical bath method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is CdS material, and thickness is 200nm;
The thiourea solution of configuration 1.5M, the cadmium sulfate solution of 0.015M, the water temperature for the treatment of the water-bath circulatory system reaches 65 ℃, adds successively 366ml deionized water, 50ml cadmium sulfate solution, 25ml thiourea solution, 65.2ml ammoniacal liquor, rapidly slice, thin piece is immersed in the water and is fixed, open stirring, react 15 minutes, wait to stop reaction, slice, thin piece is proposed and steep in deionized water 2 minutes, with blowing dry plate, on P type absorbed layer 3, deposit N-type resilient coating 4;
Four, deposition oxide film window layer step: adopt magnetron sputtering method, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:Al material, and thickness is 800nm;
Adopt the Al doping ZnO target that diameter is 100mm, cavity is evacuated to vacuum 5 * 10 -4pa, treats that substrate temperature is heated to 150 degree, working gas Ar: O 2flow-rate ratio is 100: 0.2, and operating air pressure is 0.3Pa, when radio-frequency power is 200W, deposits 50 minutes, and then inflated with nitrogen, treats that substrate is cooled to room temperature and is taken out, i.e. deposition oxide film window layer 5 on N-type resilient coating 4;
Five, plated metal gate electrode step: adopt silk screen print method, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Ag material, thickness is 8 μ m.
Described metal gate electrode layer is shaped as the spiral electrode that filament forms.
Thereby make the antimony base compound film solar cell of PN junction structure.
Embodiment 5, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt electron-beam vapor deposition method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is stainless steel, and thickness is 3cm;
Described dorsum electrode layer is Cu, and thickness is 1000nm;
Two, deposition P type absorbed layer step: adopt magnetron sputtering to send out method, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is CuSbSe 2, thickness is 3 μ m;
Adopt the CuSbSe that diameter is 100mm 2target, CuSbSe 2atomic ratio is 1: 1: 1.02, and purity is 5N, and cavity is evacuated to 5 * 10 -4pa, keeps substrate temperature room temperature, and working gas Ar gas air pressure is 0.6Pa, and radio-frequency power is 200W, deposition 60min;
Three, deposition N-type resilient coating step: adopt electrochemical deposition method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is In 2s 3material, thickness is 200nm;
Four, deposition oxide film window layer step: adopt magnetron sputtering method, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is In 2o 3: Sn material, thickness is 1000nm;
Adopt the In of the Sn doping that diameter is 100mm 2o 3target, is evacuated to vacuum 5 * 10 by cavity -4pa, treats that substrate temperature is heated to 150 degree, working gas Ar: O 2flow-rate ratio is 100: 0.2, and operating air pressure is 0.3Pa, when radio-frequency power is 200W, deposits 45 minutes, and then inflated with nitrogen, treats that substrate is cooled to room temperature and is taken out, i.e. deposition oxide film window layer 5 on N-type resilient coating 4;
Five, plated metal gate electrode step: adopt magnetron sputtering method, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Ni material, thickness is 10 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby make the antimony base compound film solar cell of PN junction structure.
Embodiment 6, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt magnetron sputtering method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is glass, and thickness is 2cm;
Described dorsum electrode layer is Mo; Thickness is 800nm;
Two, deposition P type absorbed layer step: adopt solution coating method, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is Sb 2s 3, thickness is 1 μ m;
Adopt solution coating method that Sb: S is dissolved in and in hydrazine, forms Sb according to the ratio of 1: 6 2s 3presoma, with film applicator by Sb 2s 3presoma divides four layers to be spin-coated on dorsum electrode layer 2, and thickness is 1 μ m, and presoma is placed in to nitrogen atmosphere, 450 ℃ of annealing 10 minutes, forms deposition P type absorbed layer 3; Surface topography under electronic scanner microscope as shown in figure 18; X ray diffracting spectrum as shown in figure 19; Raman collection of illustrative plates as shown in figure 20; TGA collection of illustrative plates as shown in figure 21; Transmission curve is as shown in figure 22: light absorption curve as shown in figure 23;
Three, deposition N-type resilient coating step: adopt chemical bath method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is CdS material, and thickness is 70nm;
The thiourea solution of configuration 1.5M, the cadmium sulfate solution of 0.015M, the water temperature for the treatment of the water-bath circulatory system reaches 65 ℃, adds successively 366ml deionized water, 50ml cadmium sulfate solution, 25ml thiourea solution, 65.2ml ammoniacal liquor, rapidly slice, thin piece is immersed in the water and is fixed, open stirring, react 11 minutes, wait to stop reaction, slice, thin piece is proposed and steep in deionized water 2 minutes, with blowing dry plate, on P type absorbed layer 3, deposit N-type resilient coating 4;
Four, deposition oxide film window layer step: adopt magnetron sputtering method, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:Al material, and thickness is 500nm;
Five, plated metal gate electrode step: adopt silk screen print method, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Au material, thickness is 7 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby make the antimony base compound film solar cell of PN junction structure.
Embodiment 7, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt magnetron sputtering method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is Cu, and thickness is 0.1cm;
Described dorsum electrode layer is Ni; Thickness is 1000nm;
Two, deposition P type absorbed layer step: adopt pulse laser deposition, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is Sb 2s 3, thickness is 1.2 μ m;
Three, deposition N-type resilient coating step: adopt thermal evaporation, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is ZnO material, and thickness is 30nm;
Four, deposition oxide film window layer step: adopt thermal evaporation, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:Al material, and thickness is 300nm;
Five, plated metal gate electrode step: adopt thermal evaporation, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Ag material, thickness is 8 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby make the antimony base compound film solar cell of PN junction structure.
Embodiment 8, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt magnetron sputtering method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is Al, and thickness is 0.01cm;
Described dorsum electrode layer is Ni; Thickness is 100nm;
Two, deposition P type absorbed layer step: adopt magnetron sputtering method, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is Sb 2s 3, thickness is 0.2 μ m;
Three, deposition N-type resilient coating step: adopt chemical bath method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is Zn (S, O) material, and thickness is 140nm;
The zinc acetate solution of configuration 0.2M, the thiourea solution of 0.8M, the water temperature for the treatment of the water-bath circulatory system reaches 80 ℃, adds successively 200ml zinc acetate solution, 14.7g trisodium citrate, 100ml thiourea solution, 50ml ammoniacal liquor, 150ml deionized water, rapidly slice, thin piece is immersed in the water and is fixed, open stirring, react 3 hours, wait to stop reaction, slice, thin piece is proposed and steep in deionized water 2 minutes, with blowing dry plate, on P type absorbed layer 3, deposit N-type resilient coating 4;
Four, deposition oxide film window layer step: adopt magnetron sputtering method, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is SnO 2: F material, thickness is 600nm;
Five, plated metal gate electrode step: adopt thermal evaporation, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Au material, thickness is 2 μ m.
Described metal gate electrode layer is shaped as the spiral electrode that filament forms.
Thereby make the antimony base compound film solar cell of PN junction structure.
Embodiment 9, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt magnetron sputtering method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is glass, and thickness is 0.2cm;
Described dorsum electrode layer is Mo; Thickness is 800nm;
Two, deposition P type absorbed layer step: adopt solution coating method, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is Sb 2se 3, thickness is 1 μ m;
Adopt solution coating method that Sb: Se is dissolved in and in hydrazine, forms Sb according to the ratio of 1: 4 2se 3presoma, with film applicator by Sb 2se 3presoma is spin-coated on dorsum electrode layer 2, and thickness is 1 μ m, and presoma is placed in to nitrogen atmosphere, 350 ℃ of annealing 10 minutes, forms deposition P type absorbed layer 3; Surface topography under electronic scanner microscope as shown in figure 24; X ray diffracting spectrum as shown in figure 25; TGA collection of illustrative plates as shown in figure 26;
Three, deposition N-type resilient coating step: adopt chemical bath method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is CdS material, and thickness is 70nm;
Four, deposition oxide film window layer step: adopt magnetron sputtering method, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:Al material, and thickness is 500nm;
Five, plated metal gate electrode step: adopt silk screen print method, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Ag material, thickness is 10 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby make the compound film solar cell of PN junction structure.
In the present embodiment, described metal gate electrode layer (6) can be the binary combination of Au and Ag, at thickness, be on the Au metal level of 3 μ m again deposit thickness be the Ag metal level of 5 μ m.
Embodiment 10, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt thermal evaporation at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is glass, and thickness is 1.8cm;
Described dorsum electrode layer is SnO 2: F; Thickness is 1000nm;
Two, deposition P type absorbed layer step: adopt electrochemical deposition embrane method, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is Sb 2se 3, thickness is 1.5 μ m;
Three, deposition N-type resilient coating step: adopt magnetron sputtering method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is In 2(S, O, OH) 3material, thickness is 150nm;
Four, deposition oxide film window layer step: adopt thermal evaporation, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:Al material, and thickness is 800nm;
Five, plated metal gate electrode step: adopt magnetron sputtering method, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Ni material, thickness is 10 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby make the antimony base compound film solar cell of PN junction structure.
Embodiment 11, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt magnetron sputtering method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is glass, and thickness is 1.8cm;
Described dorsum electrode layer is Ni, and thickness is 800nm;
Two, deposition P type absorbed layer step: adopt solution coating method, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is Cu 3sbS 4, thickness is 1 μ m;
Adopt solution coating method that Cu: Sb: S is dissolved in and in hydrazine, forms Cu according to the ratio of 3: 1: 9 3sbS 4presoma, with film applicator by Cu 3sbS 4presoma divides five layers to be spin-coated on dorsum electrode layer (2) above, and thickness is 1 μ m, and presoma is placed in to nitrogen atmosphere, adds lid 400 ℃ of annealing 5 minutes, forms deposition P type absorbed layer 3; Surface topography under electronic scanner microscope as shown in figure 27; X ray diffracting spectrum as shown in figure 28; TGA collection of illustrative plates as shown in figure 29;
Three, deposition N-type resilient coating step: adopt chemical bath method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is CdS material, and thickness is 100nm;
Four, deposition oxide film window layer step: adopt magnetron sputtering method, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:Al material, and thickness is 500nm;
Five, plated metal gate electrode step: adopt silk screen print method, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Ag material, thickness is 8 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby make the antimony base compound film solar cell of PN junction structure.
In the present embodiment, described metal gate electrode layer (6) can be the binary combination of Au and Ag, at thickness, be on the Au metal level of 3 μ m again deposit thickness be the Ag metal level of 5 μ m.
Embodiment 12, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt electrochemical deposition method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is Cu, and thickness is 0.05cm;
Described dorsum electrode layer is Al, and thickness is 300nm;
Two, deposition P type absorbed layer step: adopt thermal evaporation, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is Cu 3sbS 4, thickness is 0.8 μ m;
Three, deposition N-type resilient coating step: adopt magnetron sputtering method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is Zn (S, O) material, and thickness is 70nm;
Four, deposition oxide film window layer step: adopt magnetron sputtering method, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:B material, and thickness is 400nm;
The ZnO target that adopts the B doping that diameter is 100mm, purity is 4N, cavity is evacuated to 5 * 10 -4pa, substrate temperature is heated to 150 degree, working gas Ar and O 2flow-rate ratio be 100: 0.2, operating air pressure is 0.3Pa, radio-frequency power is 200W, sedimentation time is 45min, fills N 2to be cooledly get sheet to room temperature, i.e. deposition oxide film window layer 5 on N-type resilient coating 4;
Five, plated metal gate electrode step: adopt thermal evaporation, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Ag material, thickness is 6 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby make the antimony base compound film solar cell of PN junction structure.
In the present embodiment, described metal gate electrode layer (6) can be the binary combination of Au and Ag, and on the Au metal level of thickness 2 μ m, deposit thickness is the Ag metal level of 4 μ m again.
Embodiment 13, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt magnetron sputtering method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is glass, and thickness is 2cm;
Described dorsum electrode layer is Mo; Thickness is 1000nm;
Two, deposition P type absorbed layer step: adopt solution coating method, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is Cu 3sbS 3, thickness is 1.5 μ m;
Adopt solution coating method that Cu: Sb: S is dissolved in and in hydrazine, forms Cu according to the ratio of 3: 1: 9 3sbS 3presoma, with film applicator by Cu 3sbS 3presoma divides five layers to be spin-coated on dorsum electrode layer 2, and thickness is 1.5 μ m, and presoma is placed in to nitrogen atmosphere, 400 ℃ of annealing 5 minutes, forms deposition P type absorbed layer 3; Surface topography under electronic scanner microscope as shown in figure 30;
Three, deposition N-type resilient coating step: adopt chemical bath method, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is CdS material, and thickness is 120nm;
The thiourea solution of configuration 1.5M, the cadmium sulfate solution of 0.015M, the water temperature for the treatment of the water-bath circulatory system reaches 65 ℃, adds successively 366ml deionized water, 50ml cadmium sulfate solution, 25ml thiourea solution, 65.2ml ammoniacal liquor, rapidly slice, thin piece is immersed in the water and is fixed, open stirring, react 14 minutes, wait to stop reaction, slice, thin piece is proposed and steep in deionized water 2 minutes, with blowing dry plate, on P type absorbed layer 3, deposit N-type resilient coating 4;
Four, deposition oxide film window layer step: adopt magnetron sputtering method, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:Al material, and thickness is 500nm;
Five, plated metal gate electrode step: adopt silk screen print method, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Ag material, thickness is 8 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby make the compound film solar cell of PN junction structure.
Embodiment 14, and the preparation method of antimony base compound film solar cell comprises deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step:
One, deposition dorsum electrode layer step: adopt magnetron sputtering method at substrate 1 surface deposition dorsum electrode layer 2;
Described substrate is polyimides, and thickness is 0.1cm;
Described dorsum electrode layer is SnO 2: F; Thickness is 200nm;
Two, deposition P type absorbed layer step: adopt pulse laser deposition, deposit P type absorbed layer 3 on dorsum electrode layer 2;
Described P type absorbed layer material is Cu 3sbS 3, thickness is 1 μ m;
Three, deposition N-type resilient coating step: adopt pulse laser deposition, deposit N-type resilient coating 4 on P type absorbed layer 3;
Described N-type resilient coating is ZnO material, and thickness is 80nm;
Four, deposition oxide film window layer step: adopt thermal evaporation, deposition oxide film window layer 5 on N-type resilient coating 4;
Described sull Window layer is ZnO:Al material, and thickness is 300nm;
Five, plated metal gate electrode step: adopt spraying process, plated metal gate electrode 6 in sull Window layer 5, described metal gate electrode layer (6) is Au material, thickness is 3 μ m.
Described metal gate electrode layer is shaped as the mesh-like electrode that filament forms.
Thereby make the antimony base compound film solar cell of PN junction structure.

Claims (7)

1. an antimony base compound film solar cell, comprise substrate (1) and the dorsum electrode layer (2), P type absorbed layer (3), N-type resilient coating (4), sull Window layer (5) and the metal gate electrode (6) that deposit successively thereon, it is characterized in that:
Described P type absorbed layer (3) is Cu xsb yβ zmaterial, wherein β is S or Se, X=0～3, Y=1～2, Z=2～4.
2. antimony base compound film solar cell as claimed in claim 1, is characterized in that:
Described substrate (1) is glass, Al, Cu, stainless steel or polyimide material; Described dorsum electrode layer (2) is Mo, Cu, Au, Ni, Ag, Al, SnO 2: F or In 2o 3: Sn material; Described N-type resilient coating (4) is CdS, Zn (S, O), In 2s 3, In 2(S, O, OH) 3, TiO 2or ZnO material; Described sull Window layer (5) is In 2o 3: Sn, ZnO: Al, ZnO: B or SnO 2: F material; Described metal gate electrode (6) is Mo, Cu, Au, Ni, Ag or Al material or their binary combination, and described binary combination for depositing another kind of metal level on a kind of metal level again.
3. antimony base compound film solar cell as claimed in claim 1 or 2, is characterized in that:
Described substrate (1) thickness is 0.01cm～3cm; Described dorsum electrode layer (2) thickness is 100nm～1000nm; Described P type absorbed layer (3) thickness is 0.2 μ m～3 μ m; Described N-type resilient coating (4) thickness is 30nm～200nm; Described sull Window layer (5) thickness is 100nm～1000nm; Described metal gate electrode (6) thickness is 1 μ m～10 μ m.
4. antimony base compound film solar cell as claimed in claim 3, is characterized in that:
Described metal gate electrode is shaped as the mesh-like of filament composition or the spiral electrode that filament forms.
5. the preparation method of antimony base compound film solar cell as claimed in claim 1 or 2, comprise deposition dorsum electrode layer step, deposition P type absorbed layer step, deposition N-type resilient coating step, deposition oxide film window layer step, plated metal gate electrode step, it is characterized in that:
One, deposition dorsum electrode layer step: adopt magnetron sputtering, thermal evaporation, electron beam evaporation or electrochemical deposition method at substrate (1) surface deposition dorsum electrode layer (2);
Two, deposition P type absorbed layer step: adopt magnetron sputtering, thermal evaporation, pulsed laser deposition, electrochemical deposition or solution coating method, at the upper deposition of dorsum electrode layer (2) P type absorbed layer (3);
Three, deposition N-type resilient coating step: adopt magnetron sputtering, thermal evaporation, pulsed laser deposition, electrochemical deposition, chemical bath method or solution coating method, at the upper deposition of P type absorbed layer (3) N-type resilient coating (4);
Four, deposition oxide film window layer step: adopt magnetron sputtering or thermal evaporation, at the upper deposition oxide film window layer (5) of N-type resilient coating (4);
Five, plated metal gate electrode step: adopt magnetron sputtering, thermal evaporation, spraying or silk screen print method, go up plated metal gate electrode (6) in sull Window layer (5), thereby make the antimony base compound film solar cell of PN junction structure.
6. the preparation method of antimony base compound film solar cell as claimed in claim 5, is characterized in that:
Described substrate (1) thickness is 0.01cm～3cm; Described dorsum electrode layer (2) thickness is 100nm～1000nm; Described P type absorbed layer (3) thickness is 0.2 μ m～3 μ m; Described N-type resilient coating (4) thickness is 30nm～200nm; Described sull Window layer (5) thickness is 100nm～1000nm; Described metal gate electrode (6) thickness is 1 μ m～10 μ m.
7. the preparation method of the antimony base compound film solar cell as described in claim 5 or 6, is characterized in that:
Described metal gate electrode is shaped as the mesh-like of filament composition or the spiral electrode that filament forms.
CN201310163431.5A 2013-05-07 2013-05-07 Antimony-base compound thin film solar cell and manufacturing method thereof Pending CN104143579A (en)

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CN105244416A (en) * 2015-10-27 2016-01-13 合肥工业大学 Low-temperature deposition process of copper-antimony-selenium solar cell light absorption layer film
CN108231915A (en) * 2016-12-13 2018-06-29 神华集团有限责任公司 A kind of CIGS thin film solar cell and preparation method thereof
CN107093650A (en) * 2017-04-07 2017-08-25 金陵科技学院 A kind of method for preparing copper antimony sulphur solar battery obsorbing layer
CN110165020A (en) * 2019-05-29 2019-08-23 常州大学 One kind being based on CdS/SnO2Mix the efficient Sb of N-type layer2Se3Hull cell and preparation method thereof
CN112002780A (en) * 2020-07-21 2020-11-27 重庆神华薄膜太阳能科技有限公司 Thin film solar cell and method for manufacturing same
CN112563343A (en) * 2020-12-09 2021-03-26 电子科技大学 Based on Zn1-xMgxInorganic solar cell with O buffer layer and preparation method thereof
CN112614896A (en) * 2020-12-25 2021-04-06 广东省科学院半导体研究所 Thin film transistor and preparation method thereof
CN112909161A (en) * 2021-01-05 2021-06-04 华中科技大学 Low-power-consumption phase change memory unit with buffer layer and preparation method thereof
CN113463109A (en) * 2021-06-16 2021-10-01 华南师范大学 Ternary copper-based compound semiconductor photoelectrode, unbiased sunlight water decomposition hydrogen production and oxygen production device and preparation method thereof

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