CN107275423A - A kind of processing method for lifting black silion cell conversion efficiency - Google Patents
A kind of processing method for lifting black silion cell conversion efficiency Download PDFInfo
- Publication number
- CN107275423A CN107275423A CN201710419442.3A CN201710419442A CN107275423A CN 107275423 A CN107275423 A CN 107275423A CN 201710419442 A CN201710419442 A CN 201710419442A CN 107275423 A CN107275423 A CN 107275423A
- Authority
- CN
- China
- Prior art keywords
- processing method
- conversion efficiency
- cleaning
- black silicon
- cell conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 22
- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 47
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000004140 cleaning Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 21
- 230000005587 bubbling Effects 0.000 claims abstract description 20
- 239000002253 acid Substances 0.000 claims abstract description 14
- 238000001035 drying Methods 0.000 claims abstract description 7
- 235000008216 herbs Nutrition 0.000 claims abstract description 6
- 210000002268 wool Anatomy 0.000 claims abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- 230000002000 scavenging effect Effects 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 4
- 229960002050 hydrofluoric acid Drugs 0.000 claims 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009776 industrial production Methods 0.000 abstract description 4
- 230000009466 transformation Effects 0.000 abstract description 4
- 238000005406 washing Methods 0.000 description 7
- 238000005457 optimization Methods 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 5
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to technical field of solar batteries, a kind of processing method for lifting black silion cell conversion efficiency is specifically disclosed.The processing method at least comprises the following steps：Take after making herbs into wool the former piece of black silicon to be put into mixed acid solution to be cleaned, bubbling is not accompanied by cleaning process requirement groove；Cleaning in pure water is put into rear black silicon chip is washed, cleaning process is required in rinse bath with bubbling；Cleaning in hydrofluoric acid solution is put into rear black silicon chip is washed；Cleaning in pure water is put into rear black silicon chip is washed again, cleaning process is required in rinse bath with bubbling；Finally by the black silicon chip that drying optimizes to surface texture in drying tank of black silicon chip after cleaning, with technological process is simple, technical conditions require that the low and links process time is short, reduce production cost, effectively raise the transformation efficiency of battery, the characteristics of being conducive to large-scale industrial production.
Description
Technical field
The invention belongs to technical field of solar batteries, and in particular to a kind of processing side of the black silion cell conversion efficiency of lifting
Method.
Background technology
Black silicon refers to that the relatively low semi-conducting material of most of visible ray, reflectivity can be absorbed, because these characteristics, black silicon
Compared with general silicon materials, photoelectric transformation efficiency can be substantially improved, so the application prospect of the black silicon technology of photovoltaic art is very
It is important.
At present, the preparation method of black silicon mainly has two methods of dry and wet.Dry method include laser ablation and react from
Son etching, wet method refers to metal catalyst solution etching.It is also very low that two kinds of preparation methods obtain all very big reflectivity of black silicon surface area,
Short circuit current flow can be effectively lifted, but the increase of black silicon surface area can be impacted to passivation technology, surface recombination is serious, makes
Open-circuit voltage declines, and can not finally improve battery conversion efficiency.Therefore, how to take into account surface texture and reduce surface recombination,
It is the present technical problem for being badly in need of solving.However, existing process flow is complicated, the process time for cleaning link is longer, is produced into
This height, is unfavorable for large-scale industrial production.
The content of the invention
Complicated for technological process, the process time for cleaning link is longer, and production cost is high, is unfavorable for large-scale industry
The problem of production, there is provided a kind of processing method for lifting black silion cell conversion efficiency.
In order to solve the above technical problems, the technical solution used in the present invention is：
A kind of processing method for lifting black silion cell conversion efficiency, at least comprises the following steps：
（1）The former piece of black silicon after making herbs into wool is carried out by cleaning treatment using mixed acid solution, requires to be not accompanied by rinse bath during cleaning
Bubbling；
（2）Cleaning treatment is carried out to the former piece of black silicon by step (1) processing using pure water, cleaning process requires companion in rinse bath
With bubbling；
（3）The former piece of black silicon by step (2) processing is put into hydrofluoric acid solution and carries out cleaning treatment；
（4）Cleaning treatment is carried out to the former piece of black silicon after step (3) processing using pure water, cleaning process requires adjoint in rinse bath
Bubbling；
（5）Processing is dried in the former piece of the black silicon handled by step (4).
Further, the step（1）In, cleaning temperature is 15-25 DEG C, and scavenging period is 10s-300s.
Further, the mixed acid solution is mixed by hydrofluoric acid and nitric acid.
Further, the volume ratio of hydrofluoric acid and nitric acid is 1 in the mixed acid:60-70.
Further, mass concentration is 30-37% before the hydrofluoric acid mixing；Mass concentration 50- before the nitric acid mixing
65%。
Further, the step（2）In, the temperature of pure water is 20-25 DEG C, and scavenging period is 2-8min.
Further, the step（3）In, hydrofluoric acid mass concentration is 5-9%.
Further, the step（3）In, scavenging period is 1-2min.
Further, the step（4）In, the temperature of pure water is 20-25 DEG C, and scavenging period is 2-8min.
Further, the drying process temperature is 70-90 DEG C, and the time is 10-20min.
It is using the beneficial effect produced by above-mentioned technical proposal：A kind of black silion cell conversion efficiency of lifting of the present invention
Processing method.Change black silicon face structure using cleaning, improve black silicon face structure, improve reflectivity, reduce table
Face is combined, and improves open-circuit voltage Voc, the short circuit current flow Isc of solar cell, is finally reached the result of lifting battery efficiency, has
Technological process is simple, technical conditions require that the low and links process time is short, reduces production cost, effectively raises battery
Transformation efficiency, the characteristics of being conducive to large-scale industrial production.
Brief description of the drawings
Fig. 1 is black silion cell fabrication processing figure involved in the present invention.
Fig. 2 is the black silicon wafer surface cleaning process chart of the present invention.
Fig. 3 is the surface texture scanning electron microscope (SEM) photograph of the former piece of black silicon used in the embodiment of the present invention.
Fig. 4 is the surface texture scanning electron microscope (SEM) photograph of the black silicon chip after the optimization that the embodiment of the present invention is prepared.
Embodiment
With reference to specific embodiment, the present invention is further detailed explanation.
A kind of processing method for lifting black silion cell conversion efficiency of the present invention, when being cleaned to the former piece of black silicon, is selected
Hydrofluoric acid and nitric acid volume ratio are 1 in mixed acid solution, mixed acid:60-70, hydrofluoric acid concentration reduction can prolong the reaction time
Long, excessive concentration, reaction can be more violent, is difficult to control；It is more acute due to reacting when being cleaned with mixed acid solution
It is strong, accelerate the activity of mixed acid solution without starting bubbling function；And in washing, it is in order that in groove to start bubbling function
Water activity get up, accelerate cleaning.
Embodiment 1
（1）The former piece of black silicon of making herbs into wool back reflection rate 9% is taken by 2.5L hydrofluoric acid（Concentration 35%）With 150L nitric acid（60%）Composition
10s is cleaned in mixed acid, cleaning process requires to be not accompanied by bubbling in groove, and temperature control is at 20 DEG C；
（2）8min is cleaned washing the former piece of rear black silicon and being put into pure water, with bubbling in rinse bath, the temperature control of pure water is 25
℃；
（3）1 min is cleaned in concentration is 9% hydrofluoric acid solution；
（4）Cleaned washing the former piece of rear black silicon and being put into pure water with bubbling in 5 min, rinse bath, the temperature control of pure water is 23
℃；
（5）20 min are finally dried in 70 DEG C of drying tanks, the former piece of black silicon of surface texture optimization is obtained.
The black silicon chip after optimization is prepared, the former piece of black silicon is characterized with the black silicon chip after optimization by ESEM, as a result
As shown in Figure 3 and Figure 4, the black silicon chip surface structure after cleaning has clear improvement.
Embodiment 2
（1）The former piece of black silicon of making herbs into wool back reflection rate 8% is taken by 2L hydrofluoric acid（Concentration 35%）With 130L nitric acid（50%）What is constituted is mixed
Close and 40s is cleaned in acid, cleaning process requires to be not accompanied by bubbling in groove, and temperature control is at 25 DEG C；
（2）Cleaned washing the former piece of rear black silicon and being put into pure water with bubbling in 5 min, rinse bath, the temperature control of pure water is 23
℃；
（3）2 min are cleaned in concentration is 5% hydrofluoric acid solution；
（4）Cleaned washing the former piece of rear black silicon and being put into pure water with bubbling in 8 min, rinse bath, the temperature control of pure water is 20
℃；
（5）10min finally is dried in 90 DEG C of drying tanks, the former piece of black silicon of surface texture optimization is obtained.
Embodiment 3
（1）The former piece of black silicon of making herbs into wool back reflection rate 10% is taken by 3L hydrofluoric acid（Concentration 37%）With 180L nitric acid（65%）Composition
300s is cleaned in mixed acid, cleaning process requires to be not accompanied by bubbling in groove, and temperature control is at 15 DEG C；
（2）Cleaned washing the former piece of rear black silicon and being put into pure water with bubbling in 8 min, rinse bath, the temperature control of pure water is 20
℃；
（3）1.5 min are cleaned in concentration is 7% hydrofluoric acid solution；
（4）Cleaned washing rear black silicon chip and being put into pure water in 2 min, rinse bath with bubbling, the temperature control of pure water is at 25 DEG C；
（5）15min finally is dried in 80 DEG C of drying tanks, the former piece of black silicon of surface texture optimization is obtained.
The former piece of black silicon that the surface texture prepared by above technical scheme optimizes, has carried out reflectivity and conversion is imitated
The corresponding test of rate, it is as a result as shown in the table.
Data can be obtained in table, a kind of processing method for lifting black silion cell conversion efficiency of the present invention, utilize cleaning
Change black silicon face structure, improve black silicon face structure, improve reflectivity 5%, reduce surface recombination, improve solar cell
Open-circuit voltage Voc, short circuit current flow Isc, the transformation efficiency of battery effectively raises 0.25%-0.30%, and technological process letter
Single, technical conditions require that the low and links process time is short, and cost is low, is conducive to large-scale industrial production.
General principle, principal character and the advantages of the present invention of the present invention has been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the simply explanation described in above-described embodiment and specification is originally
The principle of invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, the present invention
Claimed scope is by appended claims, specification and its equivalent thereof.
Claims (10)
1. a kind of processing method for lifting black silion cell conversion efficiency, it is characterised in that at least comprise the following steps：
（1）The former piece of black silicon after making herbs into wool is carried out by cleaning treatment using mixed acid solution, requires to be not accompanied by rinse bath during cleaning
Bubbling；
（2）Cleaning treatment is carried out to the former piece of black silicon by step (1) processing using pure water, cleaning process requires companion in rinse bath
With bubbling；
（3）The former piece of black silicon by step (2) processing is put into hydrofluoric acid solution and carries out cleaning treatment；
（4）Cleaning treatment is carried out to the former piece of black silicon after step (3) processing using pure water, cleaning process requires adjoint in rinse bath
Bubbling；
（5）Processing is dried in the former piece of the black silicon handled by step (4).
2. a kind of processing method for lifting black silion cell conversion efficiency according to claim 1, it is characterised in that：The step
Suddenly（1）In, cleaning temperature is 15-25 DEG C, and scavenging period is 10s-300s.
3. a kind of processing method for lifting black silion cell conversion efficiency according to claim 1, it is characterised in that：It is described mixed
Acid solution is closed to be mixed by hydrofluoric acid and nitric acid.
4. a kind of processing method for lifting black silion cell conversion efficiency according to claim 3, it is characterised in that：It is described mixed
The volume ratio for closing hydrofluoric acid and nitric acid in acid is 1:60-70.
5. a kind of processing method for lifting black silion cell conversion efficiency according to claim 3, it is characterised in that：The hydrogen
Mass concentration is 30-37% before fluoric acid mixing；Mass concentration 50-65% before the nitric acid mixing.
6. a kind of processing method for lifting black silion cell conversion efficiency according to claim 1, it is characterised in that：The step
Suddenly（2）In, the temperature of pure water is 20-25 DEG C, and scavenging period is 2-8min.
7. a kind of processing method for lifting black silion cell conversion efficiency according to claim 1, it is characterised in that：The step
Suddenly（3）In, hydrofluoric acid mass concentration is 5-9%.
8. a kind of processing method for lifting black silion cell conversion efficiency according to claim 1, it is characterised in that：The step
Suddenly（3）In, scavenging period is 1-2min.
9. a kind of processing method for lifting black silion cell conversion efficiency according to claim 1, it is characterised in that：The step
Suddenly（4）In, the temperature of pure water is 20-25 DEG C, and scavenging period is 2-8min.
10. a kind of processing method for lifting black silion cell conversion efficiency according to claim 1, it is characterised in that：It is described
Drying process temperature is 70-90 DEG C, and the time is 10-20min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710419442.3A CN107275423B (en) | 2017-06-06 | 2017-06-06 | A kind of processing method promoting black silion cell transfer efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710419442.3A CN107275423B (en) | 2017-06-06 | 2017-06-06 | A kind of processing method promoting black silion cell transfer efficiency |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107275423A true CN107275423A (en) | 2017-10-20 |
| CN107275423B CN107275423B (en) | 2018-10-12 |
Family
ID=60065849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710419442.3A Active CN107275423B (en) | 2017-06-06 | 2017-06-06 | A kind of processing method promoting black silion cell transfer efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107275423B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659392A (en) * | 2018-12-05 | 2019-04-19 | 中国科学院长春光学精密机械与物理研究所 | Reduce the method and micro-structure silicon materials of golden half contact resistance on micro-structure silicon materials |
| CN114029300A (en) * | 2021-03-12 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Method for cleaning graphite plate |
| CN114864744A (en) * | 2022-05-05 | 2022-08-05 | 普乐新能源科技(徐州)有限公司 | Efficient cleaning method and system for nano silicon slurry |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050148198A1 (en) * | 2004-01-05 | 2005-07-07 | Technion Research & Development Foundation Ltd. | Texturing a semiconductor material using negative potential dissolution (NPD) |
| JP2013026571A (en) * | 2011-07-25 | 2013-02-04 | Sumco Corp | Solar battery wafer manufacturing method, solar battery cell manufacturing method, and solar battery module manufacturing method |
| CN104505430A (en) * | 2014-12-04 | 2015-04-08 | 常州大学 | High-efficiency polycrystalline black silicon cell |
| CN105206709A (en) * | 2015-10-10 | 2015-12-30 | 浙江晶科能源有限公司 | Treatment method used for optimizing black silicon surface structure |
| CN106449373A (en) * | 2016-11-30 | 2017-02-22 | 中利腾晖光伏科技有限公司 | Heterojunction cell texturing and washing method |
-
2017
- 2017-06-06 CN CN201710419442.3A patent/CN107275423B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050148198A1 (en) * | 2004-01-05 | 2005-07-07 | Technion Research & Development Foundation Ltd. | Texturing a semiconductor material using negative potential dissolution (NPD) |
| JP2013026571A (en) * | 2011-07-25 | 2013-02-04 | Sumco Corp | Solar battery wafer manufacturing method, solar battery cell manufacturing method, and solar battery module manufacturing method |
| CN104505430A (en) * | 2014-12-04 | 2015-04-08 | 常州大学 | High-efficiency polycrystalline black silicon cell |
| CN105206709A (en) * | 2015-10-10 | 2015-12-30 | 浙江晶科能源有限公司 | Treatment method used for optimizing black silicon surface structure |
| CN106449373A (en) * | 2016-11-30 | 2017-02-22 | 中利腾晖光伏科技有限公司 | Heterojunction cell texturing and washing method |
Non-Patent Citations (1)
| Title |
|---|
| J.K.YOON ET AL: "Fabrication of Ozone Bubble Cleaning System and its Application to Clean Silicon Wafers of a Solar Cell", 《JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659392A (en) * | 2018-12-05 | 2019-04-19 | 中国科学院长春光学精密机械与物理研究所 | Reduce the method and micro-structure silicon materials of golden half contact resistance on micro-structure silicon materials |
| CN114029300A (en) * | 2021-03-12 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Method for cleaning graphite plate |
| CN114864744A (en) * | 2022-05-05 | 2022-08-05 | 普乐新能源科技(徐州)有限公司 | Efficient cleaning method and system for nano silicon slurry |
| CN114864744B (en) * | 2022-05-05 | 2024-04-02 | 普乐新能源科技(泰兴)有限公司 | Efficient cleaning method and system for nano silicon slurry |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107275423B (en) | 2018-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104576831B (en) | A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof | |
| CN102343352B (en) | Recovery method for solar silicon slice | |
| CN112542531B (en) | Silicon wafer pretreatment and heterojunction battery preparation method | |
| CN107275423B (en) | A kind of processing method promoting black silion cell transfer efficiency | |
| CN102154711A (en) | Monocrystal silicon cleaning liquid and precleaning process | |
| CN103441182B (en) | The matte processing method of solar cell and solar cell | |
| CN107658367A (en) | A kind of Wet chemical processing method of hetero-junction solar cell | |
| CN101654810B (en) | Method for preparing reflection-resisting layer on silicon slice | |
| CN109585583A (en) | A kind of process for etching for solar battery sheet production | |
| CN103700733A (en) | Cleaning treatment method of N-type crystalline silicon substrate of solar cell | |
| CN102005504A (en) | Silicon wafer fine hair making method capable of improving solar cell conversion efficiency | |
| CN112201575A (en) | Selective boron source doping method and preparation method of double-sided battery | |
| CN103606595B (en) | The recycling of the rear defective Monocrystalline silicon cell piece of sintering and grid line recovery method thereof | |
| CN110993724A (en) | Texturing and cleaning method for heterojunction solar cell | |
| CN102593247A (en) | Method for preparing solar cell mono-crystalline silicon substrate with smooth pyramid structure on surface | |
| CN110137302A (en) | The cleaning of silicon heterojunction solar battery crystalline silicon substrate and etching method and silicon heterojunction solar battery | |
| CN204311157U (en) | For the silicon chip of solar cell | |
| CN104733556B (en) | Preparation method of three-node GaAs solar cell with surface roughening structure | |
| CN106981547A (en) | A kind of monocrystalline that handles is done over again the method for piece | |
| CN101447530B (en) | Process for cleaning sizing agent used for etching silicon dioxide mask | |
| CN102969371A (en) | Structure of two-surface solar cell and manufacturing method of structure | |
| CN113990981B (en) | Single crystal suede smooth and round treatment process | |
| CN107180894A (en) | Improve PERC high-efficiency battery piece outward appearances washes phosphorus technique | |
| CN109824120A (en) | A kind of graphite phase carbon nitride modification antimony-doped stannic oxide composite photoelectric catalysis electrode, preparation method and application | |
| CN204596812U (en) | A kind of three knot GaAs solar cells with surface coarsening structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Yingchao Inventor after: Xu Zhuo Inventor after: Wang Hongfang Inventor after: Li Feng Inventor after: Wang Zhen Inventor after: Zhang Jianqi Inventor after: Chen Zhijun Inventor after: Liu Ying Inventor after: Liu Zhiqiang Inventor before: Wang Yingchao Inventor before: Xu Zhuo Inventor before: Wang Hongfang Inventor before: Li Feng Inventor before: Wang Zhen |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |