CN107275423B - A kind of processing method promoting black silion cell transfer efficiency - Google Patents
A kind of processing method promoting black silion cell transfer efficiency Download PDFInfo
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- CN107275423B CN107275423B CN201710419442.3A CN201710419442A CN107275423B CN 107275423 B CN107275423 B CN 107275423B CN 201710419442 A CN201710419442 A CN 201710419442A CN 107275423 B CN107275423 B CN 107275423B
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- 238000003672 processing method Methods 0.000 title claims abstract description 20
- 230000001737 promoting effect Effects 0.000 title claims abstract description 18
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 45
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000004140 cleaning Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 20
- 239000002253 acid Substances 0.000 claims abstract description 14
- 230000005587 bubbling Effects 0.000 claims abstract description 10
- 235000008216 herbs Nutrition 0.000 claims abstract description 6
- 210000002268 wool Anatomy 0.000 claims abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- 230000002000 scavenging effect Effects 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 4
- 229960002050 hydrofluoric acid Drugs 0.000 claims 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 238000005406 washing Methods 0.000 abstract description 8
- 238000001035 drying Methods 0.000 abstract description 6
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009776 industrial production Methods 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 3
- 230000009466 transformation Effects 0.000 abstract description 3
- 238000005457 optimization Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The present invention relates to technical field of solar batteries, specifically disclose a kind of processing method promoting black silion cell transfer efficiency.The processing method includes at least following steps：It takes after making herbs into wool black silicon original piece to be put into mixed acid solution to be cleaned, cleaning process requires to be not accompanied by bubbling in slot；It is cleaned washing rear black silicon original piece and being put into pure water, cleaning process requires in rinse bath with being bubbled；It is subsequently placed into hydrofluoric acid solution and cleans；It places into pure water and cleans, cleaning process requires in rinse bath with bubbling；The black silicon chip that finally drying optimizes to surface texture in drying tank.The processing method provided by the present invention, change black silicon face structure using cleaning, improve reflectivity, promote battery efficiency, with technological process, simple, technical conditions require the low and links process time short, production cost is reduced, the characteristics of effectively raising the transformation efficiency of battery, be conducive to large-scale industrial production.
Description
Technical field
The invention belongs to technical field of solar batteries, and in particular to a kind of processing side promoting black silion cell transfer efficiency
Method.
Background technology
Black silicon refers to that can absorb the lower semi-conducting material of most of visible light, reflectivity, because of these characteristics, black silicon
Compared with general silicon materials, photoelectric conversion efficiency can be substantially improved, so the application prospect of the black silicon technology of photovoltaic art is very
It is important.
Currently, the preparation method of black silicon mainly has two methods of dry and wet.Dry method include laser ablation and react from
Son etching, wet method refer to metal catalyst solution etching.It is also very low that two kinds of preparation methods obtain all very big reflectivity of black silicon surface area,
Short circuit current can be effectively promoted, but the increase of black silicon surface area can impact passivation technology, surface recombination is serious, makes
Open-circuit voltage declines, and cannot finally battery conversion efficiency be made to improve.Therefore, how to take into account surface texture and reduce surface recombination,
It is present the technical issues of being badly in need of solving.However, prior art flow is complicated, the process time for cleaning link is longer, is produced into
This height is unfavorable for large-scale industrial production.
Invention content
For technological process complexity, the process time for cleaning link is longer, and production cost is high, is unfavorable for large-scale industry
The problem of production, provides a kind of processing method promoting black silion cell transfer efficiency.
In order to solve the above technical problems, the technical solution used in the present invention is：
A kind of processing method promoting black silion cell transfer efficiency, includes at least following steps：
（1）The black silicon original piece after making herbs into wool is started the cleaning processing using mixed acid solution, is required in rinse bath not when cleaning
With bubbling；
（2）The black silicon original piece handled by step (1) is started the cleaning processing using pure water, cleaning process requires rinse bath
In be bubbled；
（3）Black silicon original piece by step (2) processing is put into hydrofluoric acid solution and is started the cleaning processing；
（4）Using pure water, to step (3), treated that black silicon original piece starts the cleaning processing, and cleaning process requires in rinse bath
With bubbling；
（5）Processing will be dried by the black silicon original piece of step (4) processing.
Further, the step（1）In, cleaning temperature is 15-25 DEG C, scavenging period 10s-300s.
Further, the mixed acid solution is mixed by hydrofluoric acid and nitric acid.
Further, the volume ratio of hydrofluoric acid and nitric acid is 1 in the mixed acid:60-70.
Further, a concentration of 30-37% of quality before the hydrofluoric acid mixing；Mass concentration 50- before the nitric acid mixing
65%。
Further, the step（2）In, the temperature of pure water is 20-25 DEG C, scavenging period 2-8min.
Further, the step（3）In, hydrofluoric acid mass concentration is 5-9%.
Further, the step（3）In, scavenging period 1-2min.
Further, the step（4）In, the temperature of pure water is 20-25 DEG C, scavenging period 2-8min.
Further, the drying process temperature is 70-90 DEG C, time 10-20min.
It is using advantageous effect caused by above-mentioned technical proposal：A kind of black silion cell transfer efficiency of promotion of the present invention
Processing method.Change black silicon face structure using cleaning, improve black silicon face structure, improves reflectivity, reduce table
Face is compound, improves the open-circuit voltage Voc of solar cell, short circuit current Isc, be finally reached promoted battery efficiency as a result, having
Technological process is simple, technical conditions require the low and links process time short, reduces production cost, effectively raises battery
Transformation efficiency, the characteristics of being conducive to large-scale industrial production.
Description of the drawings
Fig. 1 is black silion cell fabrication processing figure according to the present invention.
Fig. 2 is the black silicon wafer surface cleaning process flow chart of the present invention.
Fig. 3 is the surface texture scanning electron microscope (SEM) photograph of the black silicon original piece used in the embodiment of the present invention.
Fig. 4 is the surface texture scanning electron microscope (SEM) photograph of the black silicon chip after the optimization that the embodiment of the present invention is prepared.
Specific implementation mode
With reference to specific embodiment, the present invention is described in further detail.
A kind of processing method promoting black silion cell transfer efficiency of the present invention is selected when being cleaned to black silicon original piece
Mixed acid solution, hydrofluoric acid and nitric acid volume ratio are 1 in mixed acid:60-70, hydrofluoric acid concentration reduction can be such that the reaction time prolongs
Long, excessive concentration, reaction can be more violent, is difficult to control；It is more acute due to reacting when being cleaned with mixed acid solution
It is strong, accelerate the activity of mixed acid solution without starting bubbling function；And in washing, it is to make in slot to start bubbling function
Water activity get up, accelerate cleaning.
Embodiment 1
（1）Take the black silicon original piece of making herbs into wool back reflection rate 9% by 2.5L hydrofluoric acid（Concentration 35%）With 150L nitric acid（60%）Group
At mixed acid in clean 10s, cleaning process requires to be not accompanied by bubblings in slot, and temperature control is at 20 DEG C；
（2）8min is cleaned washing rear black silicon original piece and being put into pure water, with being bubbled in rinse bath, the temperature control of pure water exists
25℃；
（3）1 min is cleaned in a concentration of 9% hydrofluoric acid solution；
（4）5 min are cleaned washing rear black silicon original piece and being put into pure water, with being bubbled in rinse bath, the temperature control of pure water
At 23 DEG C；
（5）20 min are finally dried in 70 DEG C of drying tanks, obtain the black silicon original piece of surface texture optimization.
The black silicon chip after optimization is prepared, black silicon original piece is characterized with the black silicon chip after optimization by scanning electron microscope, as a result
As shown in Figure 3 and Figure 4, the black silicon chip surface structure after cleaning has clear improvement.
Embodiment 2
（1）Take the black silicon original piece of making herbs into wool back reflection rate 8% by 2L hydrofluoric acid（Concentration 35%）With 130L nitric acid（50%）Composition
Mixed acid in clean 40s, cleaning process requires to be not accompanied by bubblings in slot, and temperature control is at 25 DEG C；
（2）5 min are cleaned washing rear black silicon original piece and being put into pure water, with being bubbled in rinse bath, the temperature control of pure water
At 23 DEG C；
（3）2 min are cleaned in a concentration of 5% hydrofluoric acid solution；
（4）8 min are cleaned washing rear black silicon original piece and being put into pure water, with being bubbled in rinse bath, the temperature control of pure water
At 20 DEG C；
（5）10min finally is dried in 90 DEG C of drying tanks, obtains the black silicon original piece of surface texture optimization.
Embodiment 3
（1）Take the black silicon original piece of making herbs into wool back reflection rate 10% by 3L hydrofluoric acid（Concentration 37%）With 180L nitric acid（65%）Group
At mixed acid in clean 300s, cleaning process requires to be not accompanied by bubblings in slot, and temperature control is at 15 DEG C；
（2）8 min are cleaned washing rear black silicon original piece and being put into pure water, with being bubbled in rinse bath, the temperature control of pure water
At 20 DEG C；
（3）1.5 min are cleaned in a concentration of 7% hydrofluoric acid solution；
（4）2 min are cleaned washing rear black silicon chip and being put into pure water, with being bubbled in rinse bath, the temperature control of pure water exists
25℃；
（5）15min finally is dried in 80 DEG C of drying tanks, obtains the black silicon original piece of surface texture optimization.
By the black silicon original piece for the surface texture optimization that above technical scheme is prepared, reflectivity is carried out and conversion is imitated
The corresponding test of rate, the results are shown in table below.
It can be obtained by data in table, a kind of processing method promoting black silion cell transfer efficiency of the present invention utilizes cleaning
Change black silicon face structure, improve black silicon face structure, improve reflectivity 5%, reduce surface recombination, improves solar cell
Open-circuit voltage Voc, short circuit current Isc, the transformation efficiency of battery effectively raises 0.25%-0.30%, and technological process letter
Single, technical conditions require the low and links process time short, at low cost, are conducive to large-scale industrial production.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, the present invention
Claimed range is delineated by the appended claims, the specification and equivalents thereof from the appended claims.
Claims (10)
1. a kind of processing method promoting black silion cell transfer efficiency, which is characterized in that include at least following steps：
（1）The black silicon original piece after making herbs into wool is started the cleaning processing using mixed acid solution, requires when cleaning to be not accompanied by rinse bath
It is bubbled；
（2）The black silicon original piece handled by step (1) is started the cleaning processing using pure water, cleaning process requires companion in rinse bath
With bubbling；
（3）Black silicon original piece by step (2) processing is put into hydrofluoric acid solution and is started the cleaning processing；
（4）Using pure water, to step (3), treated that black silicon original piece starts the cleaning processing, and cleaning process requires adjoint in rinse bath
It is bubbled；
（5）Processing will be dried by the black silicon original piece of step (4) processing.
2. a kind of processing method promoting black silion cell transfer efficiency according to claim 1, it is characterised in that：The step
Suddenly（1）In, cleaning temperature is 15-25 DEG C, scavenging period 10s-300s.
3. a kind of processing method promoting black silion cell transfer efficiency according to claim 1, it is characterised in that：It is described mixed
Acid solution is closed to be mixed by hydrofluoric acid and nitric acid.
4. a kind of processing method promoting black silion cell transfer efficiency according to claim 3, it is characterised in that：It is described mixed
It is 1 to close the volume ratio of hydrofluoric acid and nitric acid in acid:60-70.
5. a kind of processing method promoting black silion cell transfer efficiency according to claim 3, it is characterised in that：The hydrogen
A concentration of 30-37% of quality before fluoric acid mixing；Mass concentration 50-65% before the nitric acid mixing.
6. a kind of processing method promoting black silion cell transfer efficiency according to claim 1, it is characterised in that：The step
Suddenly（2）In, the temperature of pure water is 20-25 DEG C, scavenging period 2-8min.
7. a kind of processing method promoting black silion cell transfer efficiency according to claim 1, it is characterised in that：The step
Suddenly（3）In, hydrofluoric acid mass concentration is 5-9%.
8. a kind of processing method promoting black silion cell transfer efficiency according to claim 1, it is characterised in that：The step
Suddenly（3）In, scavenging period 1-2min.
9. a kind of processing method promoting black silion cell transfer efficiency according to claim 1, it is characterised in that：The step
Suddenly（4）In, the temperature of pure water is 20-25 DEG C, scavenging period 2-8min.
10. a kind of processing method promoting black silion cell transfer efficiency according to claim 1, it is characterised in that：It is described
It is 70-90 DEG C to be dried temperature, time 10-20min.
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| CN109659392B (en) * | 2018-12-05 | 2020-06-12 | 中国科学院长春光学精密机械与物理研究所 | Method for reducing gold-half contact resistance on microstructure silicon material and microstructure silicon material |
| CN114029300B (en) * | 2021-03-12 | 2023-03-31 | 重庆康佳光电技术研究院有限公司 | Method for cleaning graphite plate |
| CN114864744B (en) * | 2022-05-05 | 2024-04-02 | 普乐新能源科技(泰兴)有限公司 | Efficient cleaning method and system for nano silicon slurry |
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| CN104505430A (en) * | 2014-12-04 | 2015-04-08 | 常州大学 | High-efficiency polycrystalline black silicon cell |
| CN105206709A (en) * | 2015-10-10 | 2015-12-30 | 浙江晶科能源有限公司 | Treatment method used for optimizing black silicon surface structure |
| CN106449373A (en) * | 2016-11-30 | 2017-02-22 | 中利腾晖光伏科技有限公司 | Heterojunction cell texturing and washing method |
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| US20050148198A1 (en) * | 2004-01-05 | 2005-07-07 | Technion Research & Development Foundation Ltd. | Texturing a semiconductor material using negative potential dissolution (NPD) |
| JP5724718B2 (en) * | 2011-07-25 | 2015-05-27 | 株式会社Sumco | Method for producing solar cell wafer, method for producing solar cell, and method for producing solar cell module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505430A (en) * | 2014-12-04 | 2015-04-08 | 常州大学 | High-efficiency polycrystalline black silicon cell |
| CN105206709A (en) * | 2015-10-10 | 2015-12-30 | 浙江晶科能源有限公司 | Treatment method used for optimizing black silicon surface structure |
| CN106449373A (en) * | 2016-11-30 | 2017-02-22 | 中利腾晖光伏科技有限公司 | Heterojunction cell texturing and washing method |
Non-Patent Citations (1)
| Title |
|---|
| Fabrication of Ozone Bubble Cleaning System and its Application to Clean Silicon Wafers of a Solar Cell;J.K.Yoon et al;《Journal of Electrical Engineering & Technology》;20150131;全文 * |
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