CN105576081A - Manufacturing method for black silicon double-face cell - Google Patents
Manufacturing method for black silicon double-face cell Download PDFInfo
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- CN105576081A CN105576081A CN201610115909.0A CN201610115909A CN105576081A CN 105576081 A CN105576081 A CN 105576081A CN 201610115909 A CN201610115909 A CN 201610115909A CN 105576081 A CN105576081 A CN 105576081A
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 238000000151 deposition Methods 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 230000008021 deposition Effects 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 6
- 230000007797 corrosion Effects 0.000 claims abstract description 6
- 239000002253 acid Substances 0.000 claims abstract description 5
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 5
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 12
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 10
- 239000011259 mixed solution Substances 0.000 claims description 9
- 235000008216 herbs Nutrition 0.000 claims description 7
- 210000002268 wool Anatomy 0.000 claims description 7
- 101710134784 Agnoprotein Proteins 0.000 claims description 6
- 229910000085 borane Inorganic materials 0.000 claims description 6
- 238000006555 catalytic reaction Methods 0.000 claims description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 6
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000014759 maintenance of location Effects 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- 238000003892 spreading Methods 0.000 claims description 3
- 230000007480 spreading Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 abstract 3
- 230000008901 benefit Effects 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 235000009421 Myristica fragrans Nutrition 0.000 description 1
- 208000025174 PANDAS Diseases 0.000 description 1
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 1
- 240000004718 Panda Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001115 mace Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a manufacturing method for a black silicon double-face cell. The method comprises steps that (1) double-face texturing for a silicon chip is carried out; (2), black silicon structures are made at two faces of the silicon chip by employing auxiliary metal chemical corrosion; (3), after KOH nanometer suede-like face restoration, metal ions are removed through utilizing acid; (4), PECVD deposition is employed for the first face to form a boron-contained silicon dioxide layer; (5), PECVD deposition is employed for the second face to form a phosphorus-contained silicon dioxide layer; (6), double-face co-diffusion is carried out, and double-face SiNx deposition is carried out; and (7), through double-face screen printing and sintering, the black silicon double-face solar cell is formed. According to the method, doping concentration of the cell surface after diffusion can be improved, and the open-circuit voltage, the short-circuit current and conversion efficiency can be further improved.
Description
Technical field
The present invention relates to a kind of manufacture method of black silicon double-side cell, belong to technical field of solar batteries.
Background technology
In the last few years, black silicon, as a kind of novel semi-conductor photoelectric material with nanometer light trapping structure, because it has reduce battery surface reflectivity, effectively can improve the transformation efficiency of cell piece, so receive extensive concern.The preparation method of black silicon mainly comprises femtosecond laser method, electrochemical erosion method, reactive ion etching method and metal Assisted Chemical Etching Process method, wherein, femtosecond laser method and reactive ion etching method are dry etchings, and electrochemical corrosion and metal Assisted Chemical Etching Process method belong to wet etching.In the middle of all multi-methods making black silicon, metal assistant chemical etch due to its cost low, equipment is simple, is more easily integrated in the middle of current solar battery process operation and is favored.Laxer by the black silicon face of metal Assisted Chemical Etching Process method, then with alkali, correction etching processing is carried out to nanostructure, by a large amount of tests, micro-nano structure matte can reduce the reflectivity of cell piece, and transformation efficiency comparatively produces line can improve more than 0.3%.
Current crystal-silicon battery slice market only has a sensitive surface usually, the i.e. solar cell part photon that front illuminated can only be utilized to come, sunlight for cell backside all can not utilize, can not utilize sunlight fully, this is a very large obstacle for improving solar cell actual power generation.Double-side cell " Panda " battery that Ying Li group produces also adopts double-side photic technology, but it adopts front to expand phosphorus, the method of boron is expanded at the back side, printed on both sides silver electrode prepares double-side photic battery, this kind of double-side cell relates to two-sided dissimilar diffusion and multiple loaded down with trivial details operation, brings certain obstruction to the progress of industrialization.
Summary of the invention
The object of this invention is to provide a kind of manufacture method of black silicon double-side cell, first form one deck nanometer suede by the method for metal auxiliary catalysis corrosion (MACE) at silicon chip surface, adopt PECVD to deposit again, spread, print, sinter, form black silicon double-side cell, can emissivity be reduced, improve the absorption to light.
A manufacture method for black silicon double-side cell, concrete steps are:
A. silicon chip is carried out two-sided making herbs into wool;
B. the corrosion of metal auxiliary catalysis is adopted to make black silicon structure
Silicon chip after making herbs into wool is put into AgNO
3with in the mixed solution of HF, AgNO
3concentration be the concentration of 0.001-0.2mol/L, HF be 0.01-0.1mol/L, react 10-100s at ambient temperature, after completion of the reaction silicon chip cleaned, then put into HF and H
2o
2mixed solution in, the concentration of HF is 1-5mol/L, H
2o
2concentration be 0.1-2mol/L, react 50-200s at ambient temperature;
C. acid is adopted to remove metal ion
Silicon chip b step obtained is cleaned, and first at 70 DEG C, reacts 50-200s by the KOH solution of 0.005-0.2mol/L, then uses the HNO of 0.005-0.2mol/L
3cleaning 3min, finally uses HCl, H
2o
2, H2O mixed solution under the condition of 80 DEG C, clean 5-15min, HCl, H
2o
2, H2O volume ratio be 1:1:6;
D. first surface adopts PECVD deposition to form boracic silicon dioxide layer;
Adopt trimethyl borine and CO
2the first surface PECVD of the silicon chip that step c obtains is deposited to the silicon dioxide layer forming boracic, the flow of trimethyl borine is the flow of 450-600sccm, CO2 is 300-350sccm, and the time of carrying out PECVD is 380s-440s, and reaction temperature is 200 DEG C-250 DEG C;
E. second adopts PECVD deposition to form phosphorous silicon dioxide layer;
Adopt phosphine and CO
2second to the silicon chip that Step d obtains forms phosphorous silicon dioxide layer by PECVD deposition, and the flow of phosphine is 10-100sccm, CO
2flow be 300-350sccm, the time of carrying out PECVD is 380s-440s, and reaction temperature is 200 DEG C-250 DEG C;
F. two-sided diffusion altogether, deposition SiNx
The silicon chip that step e is obtained carries out spreading and depositing, N
2flow is 21L/min, and the temperature in diffusion furnace is 800 DEG C-1000 DEG C, and temperature retention time is 30min-90min, then carries out deposition SiNx film respectively to the two sides of silicon chip;
G. black silicon double-side cell is formed.
The metallization that silk screen printing is carried out on silicon chip two sides, co-sintering completes double-side cell that f step obtains, prepare the black silicon double-side cell of finished product.
Following table is the unit for electrical property parameters of black silicon double-side cell of the present invention
| Uoc(mV) | Isc(A) | Rs(mΩ) | Rsh(Ω) | FF(%) | Eta | |
| Front | -0.646 | -9.3 | 0.0041 | 148.34 | 79.67 | 19.67 |
| Reverse side | 0.633 | 9.0 | 0.0040 | 412.46 | 78.79 | 18.44 |
The invention has the advantages that: the method for being corroded by metal auxiliary catalysis forms one deck nanometer suede at silicon chip surface, it can reduce light reflectance, improves the absorption to light, adopts two sides light again, in conjunction with the advantage of black silicon and double-side cell, the electric energy being a significant increase cell piece exports.
Accompanying drawing explanation
Figure 1 shows that the execution mode schematic flow sheet according to the black silicon double-side cell of illustrated making.
Fig. 2 is the structural representation of black silicon double-side cell of the present invention.
Reference numeral: silicon chip 1, the silicon dioxide layer 2 of boracic, phosphorous silicon dioxide layer 3.
Embodiment
In order to make object of the present invention, technical scheme more clear, below in conjunction with accompanying drawing, the present invention is described in further detail.It is specifically intended that component diagram shown is in the accompanying drawings not necessarily according to certain scale.
Embodiment:
A manufacture method for black silicon double-side cell, concrete steps are:
The P-type silicon sheet adopted, 15.6cm × 15.6cm, but be not limited to this size; Resistivity is 1-3 Ω cm.
A. silicon chip is carried out two-sided making herbs into wool;
B. the corrosion of metal auxiliary catalysis is adopted to make black silicon structure
Silicon chip after making herbs into wool is put into AgNO
3with in the mixed solution of HF, AgNO
3concentration be the concentration of 0.001-0.2mol/L, HF be 0.01-0.1mol/L, react 10-100s at ambient temperature, after completion of the reaction silicon chip cleaned, then put into HF and H
2o
2mixed solution in, the concentration of HF is 1-5mol/L, H
2o
2concentration be 0.1-2mol/L, react 50-200s at ambient temperature;
C. acid is adopted to remove metal ion
Silicon chip b step obtained is cleaned, and first at 70 DEG C, reacts 50-200s by the KOH solution of 0.005-0.2mol/L, then uses the HNO of 0.005-0.2mol/L
3cleaning 3min, finally uses HCl, H
2o
2, H2O mixed solution under the condition of 80 DEG C, clean 5-15min, HCl, H
2o
2, H2O volume ratio be 1:1:6;
D. first surface adopts PECVD deposition to form boracic silicon dioxide layer;
Adopt trimethyl borine and CO
2the silicon dioxide layer forming boracic is deposited to the first surface PECVD of the silicon chip that step c obtains, the flow of trimethyl borine is 450-600sccm, the flow of CO2 is 300-350sccm, the time of carrying out PECVD is 380s-440s, reaction temperature is 200 DEG C-250 DEG C, and the first surface of silicon chip 1 forms boracic silicon dioxide layer 2;
E. second adopts PECVD deposition to form phosphorous silicon dioxide layer;
Adopt phosphine and CO
2second to the silicon chip that Step d obtains forms phosphorous silicon dioxide layer by PECVD deposition, and the flow of phosphine is 10-100sccm, CO
2flow be 300-350sccm, the time of carrying out PECVD is 380s-440s, and reaction temperature is 200 DEG C-250 DEG C, and the first surface of silicon chip 1 forms phosphorous silicon dioxide layer 3;
F. two-sided diffusion altogether, deposition SiNx
After depositing on the two sides of silicon chip 1 silicon dioxide layer 2 and phosphorous silicon dioxide layer 3 defining boracic respectively, carry out spreading and depositing, N
2flow is 21L/min, and the temperature in diffusion furnace is 800 DEG C-1000 DEG C, and temperature retention time is 30min-90min, then carries out deposition SiNx film respectively to the two sides of silicon chip;
G. black silicon double-side cell is formed.
The metallization that silk screen printing is carried out on silicon chip two sides, co-sintering completes double-side cell that f step obtains, prepare the black silicon double-side cell of finished product.
Although the step of inventing about this and advantage describe in detail, when being to be understood that the protection range limited in spirit and claims of not departing from this invention, this time invention can carry out various change, substitutions and modifications.For other examples, those of ordinary skill in the art should easy understand maintenance scope in while, the order of processing step can change.
Claims (2)
1. a manufacture method for black silicon double-side cell, is characterized by: concrete steps are:
A. silicon chip is carried out two-sided making herbs into wool;
B. the corrosion of metal auxiliary catalysis is adopted to make black silicon structure;
C. acid is adopted to remove metal ion;
D. first surface adopts PECVD deposition to form boracic silicon dioxide layer;
E. second adopts PECVD deposition to form phosphorous silicon dioxide layer;
F. two-sided diffusion altogether, deposition SiNx;
G. black silicon double-side cell is formed.
2. a manufacture method for black silicon double-side cell, is characterized by: concrete steps are:
A. silicon chip is carried out two-sided making herbs into wool;
B. the corrosion of metal auxiliary catalysis is adopted to make black silicon structure
Silicon chip after making herbs into wool is put into AgNO
3with in the mixed solution of HF, AgNO
3concentration be the concentration of 0.001-0.2mol/L, HF be 0.01-0.1mol/L, react 10-100s at ambient temperature, after completion of the reaction silicon chip cleaned, then put into HF and H
2o
2mixed solution in, the concentration of HF is 1-5mol/L, H
2o
2concentration be 0.1-2mol/L, react 50-200s at ambient temperature;
C. acid is adopted to remove metal ion
Silicon chip b step obtained is cleaned, and first at 70 DEG C, reacts 50-200s by the KOH solution of 0.005-0.2mol/L, then uses the HNO of 0.005-0.2mol/L
3cleaning 3min, finally uses HCl, H
2o
2, H2O mixed solution under the condition of 80 DEG C, clean 5-15min, HCl, H
2o
2, H2O volume ratio be 1:1:6;
D. first surface adopts PECVD deposition to form boracic silicon dioxide layer;
Adopt trimethyl borine and CO
2the first surface PECVD of the silicon chip that step c obtains is deposited to the silicon dioxide layer forming boracic, the flow of trimethyl borine is the flow of 450-600sccm, CO2 is 300-350sccm, and the time of carrying out PECVD is 380s-440s, and reaction temperature is 200 DEG C-250 DEG C;
E. second adopts PECVD deposition to form phosphorous silicon dioxide layer;
Adopt phosphine and CO
2second to the silicon chip that Step d obtains forms phosphorous silicon dioxide layer by PECVD deposition, and the flow of phosphine is 10-100sccm, CO
2flow be 300-350sccm, the time of carrying out PECVD is 380s-440s, and reaction temperature is 200 DEG C-250 DEG C;
F. two-sided diffusion altogether, deposition SiNx
The silicon chip that step e is obtained carries out spreading and depositing, N
2flow is 21L/min, and the temperature in diffusion furnace is 800 DEG C-1000 DEG C, and temperature retention time is 30min-90min, then carries out deposition SiNx film respectively to the two sides of silicon chip;
G. black silicon double-side cell is formed
The metallization that silk screen printing is carried out on silicon chip two sides, co-sintering completes double-side cell that f step obtains, prepare the black silicon double-side cell of finished product.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826432A (en) * | 2016-05-17 | 2016-08-03 | 南昌大学 | Method for preparing n-type crystalline silica double-side solar cell |
| CN106952974A (en) * | 2017-03-31 | 2017-07-14 | 浙江晶科能源有限公司 | A kind of preparation method of the black silicon double-side cell of p-type |
| WO2018000589A1 (en) * | 2016-06-27 | 2018-01-04 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing textured structure of crystalline silicon solar cell |
| CN107742660A (en) * | 2017-09-25 | 2018-02-27 | 江西展宇新能源股份有限公司 | The process of difference between a kind of improvement black silicon solar cell crystal orientation of polycrystalline |
| CN108470781A (en) * | 2018-02-28 | 2018-08-31 | 无锡尚德太阳能电力有限公司 | The production method of the two-sided PERC crystal silicon solar energy batteries of the black silicon of selective emitter |
| CN114335237A (en) * | 2020-09-29 | 2022-04-12 | 一道新能源科技(衢州)有限公司 | Preparation method of crystalline silicon solar cell and crystalline silicon solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120153250A1 (en) * | 2011-01-18 | 2012-06-21 | Bandgap Engineering, Inc. | Nanowire Device with Alumina Passivation Layer and Methods of Making Same |
| CN104538485A (en) * | 2014-11-06 | 2015-04-22 | 浙江正泰太阳能科技有限公司 | Preparation method of double-sided battery |
| CN105047758A (en) * | 2015-08-18 | 2015-11-11 | 广东爱康太阳能科技有限公司 | Black silicon solar cell and preparation method thereof |
-
2016
- 2016-03-02 CN CN201610115909.0A patent/CN105576081A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120153250A1 (en) * | 2011-01-18 | 2012-06-21 | Bandgap Engineering, Inc. | Nanowire Device with Alumina Passivation Layer and Methods of Making Same |
| CN104538485A (en) * | 2014-11-06 | 2015-04-22 | 浙江正泰太阳能科技有限公司 | Preparation method of double-sided battery |
| CN105047758A (en) * | 2015-08-18 | 2015-11-11 | 广东爱康太阳能科技有限公司 | Black silicon solar cell and preparation method thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826432A (en) * | 2016-05-17 | 2016-08-03 | 南昌大学 | Method for preparing n-type crystalline silica double-side solar cell |
| WO2018000589A1 (en) * | 2016-06-27 | 2018-01-04 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing textured structure of crystalline silicon solar cell |
| US10411145B2 (en) | 2016-06-27 | 2019-09-10 | Csi Cells Co., Ltd. | Method for producing a textured structure of a crystalline silicon solar cell |
| CN106952974A (en) * | 2017-03-31 | 2017-07-14 | 浙江晶科能源有限公司 | A kind of preparation method of the black silicon double-side cell of p-type |
| CN106952974B (en) * | 2017-03-31 | 2019-06-11 | 浙江晶科能源有限公司 | A kind of preparation method of the black silicon double-side cell of p-type |
| CN107742660A (en) * | 2017-09-25 | 2018-02-27 | 江西展宇新能源股份有限公司 | The process of difference between a kind of improvement black silicon solar cell crystal orientation of polycrystalline |
| CN108470781A (en) * | 2018-02-28 | 2018-08-31 | 无锡尚德太阳能电力有限公司 | The production method of the two-sided PERC crystal silicon solar energy batteries of the black silicon of selective emitter |
| CN114335237A (en) * | 2020-09-29 | 2022-04-12 | 一道新能源科技(衢州)有限公司 | Preparation method of crystalline silicon solar cell and crystalline silicon solar cell |
| CN114335237B (en) * | 2020-09-29 | 2024-09-17 | 一道新能源科技股份有限公司 | Preparation method of crystalline silicon solar cell and crystalline silicon solar cell |
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