CN203733813U - Graphene solar cell - Google Patents
Graphene solar cell Download PDFInfo
- Publication number
- CN203733813U CN203733813U CN201420034861.7U CN201420034861U CN203733813U CN 203733813 U CN203733813 U CN 203733813U CN 201420034861 U CN201420034861 U CN 201420034861U CN 203733813 U CN203733813 U CN 203733813U
- Authority
- CN
- China
- Prior art keywords
- graphene
- grid line
- layer graphene
- solar cell
- epitaxial wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Abstract
The utility model discloses a graphene solar cell. The graphene solar cell includes an antireflection film, a multilayer graphene front electrode, a single layer graphene grid line, an epitaxial wafer, and a multilayer graphene back electrode; the antireflection film, the single layer graphene grid line, the epitaxial wafer, and the multilayer graphene back electrode are sequentially overlapped from top to bottom; the multilayer graphene front electrode is correspondingly arranged on the epitaxial wafer, and is arranged at the same side of the epitaxial wafer as the single layer graphene grid line; the multilayer graphene front electrode circles around and is connected with a region which is formed by the single layer graphene grid line; and the multilayer graphene front electrode is provided with a metal contact, and the metal contact is used to lead out a metal wire. In the utility model, the single layer graphene grid line is used as the solar cell grid line, so as to greatly reduce the grid line width and thickness; and since the graphene material is high in light transmittance, the light absorption of the grid line can be effectively reduced, and the conversion efficiency of the solar cell is improved.
Description
Technical field
The utility model relates to the technical field of solar cell, refers in particular to a kind of Graphene solar cell.
Background technology
Along with the development of modern industry; global energy crisis and atmosphere polluting problem become increasingly conspicuous; solar energy has been subject to the attention of more and more national as desirable regenerative resource, carry out solar cell research, development photovoltaic generation industry has very important significance to the sustainable development of national energy.The subject matter facing of solar cell is that photoelectric conversion efficiency is lower, and cost performance is not high, can not meet extensive civilian demand.At present, the transformation efficiency of commercial monocrystalline silicon battery is about 16%-20%, and polycrystal silicon cell is about 14%-16%; On Ge substrate, under 500 times of optically focused of GaInP/GaAs/Ge three-joint solar cell of epitaxial growth Lattice Matching, transformation efficiency exceedes 41%, far above crystal silicon battery, and has further room for promotion.
The grid line of solar cell and electrode play a part to collect and transmission photo-generated carrier, and optimizing grid line and electrode structure and technique is one of important technology direction improving solar battery efficiency.At present, mostly adopt plated metal high annealing to form ohmic contact and make more piece solar cell surface grid line and electrode.But opaque metal grid lines can reflect and absorb incident ray, thereby reduce the effective area of shining light of solar cell, and then reduce monolithic battery power output.Under normal circumstances, grid line shielded area accounts for 5%～15% of battery effective area of shining light.In order to reduce absorption and the reflection of grid line and electrode pair luminous energy, effectively utilize more luminous energy, the correlative study of transparent grid line and electrode becomes one of technical field of solar batteries focus.In addition, the noble metal electrodes such as thicker gold and silver have also strengthened the preparation cost of solar battery chip, reduce its use amount significant.
Conventional transparent electrode material is ITO(tin indium oxide at present), and possessed commercial criterion.And in actual applications, the ito thin film light absorption poor, that meet electric property needs of the chemical stability of ITO only has 85% left and right.And along with the utilization of continually developing of rare earth element In, ITO will be more and more expensive, select a kind of its substitution material to seem very necessary.Graphene is at present known the thinnest (the about 0.34nm of monoatomic layer thickness), the hardest nano material (Young's modulus 1TPa, inherent strength 130GPa)) be almost completely transparent, only absorb 2.3% light, conductive coefficient is up to 5300W/mK, and room temperature electron mobility is greater than 15000cm
2/ Vs, all higher than carbon nano-tube and diamond, resistivity is only 10
-6Ω cm is the current material of resistivity minimum in the world.Meanwhile, Graphene has high air-tightness, and any gas can not see through completely.In Graphene, electronics can move very efficiently, far above traditional semiconductor such as silicon and copper and conductor.Due to the collision of electronics and atom, traditional semiconductor and conductor have discharged some energy by hot form, and Graphene is different, and its electron energy can not be depleted, and this makes it have the good characteristic being not of the common run.Because its resistivity is extremely low, the speed of electron transfer is exceedingly fast, and is therefore expected to can be used to develop thinner, conduction speed electronic component of new generation or transistor faster.Because Graphene is in fact a kind of transparent, good conductor, be also applicable to for manufacturing transparent touch screen, tabula rasa etc.Meanwhile, its high light transmittance and good conductivity are also suitable as transparency conducting layer very much.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, a kind of Graphene solar cell is provided, utilize high conductivity and the high light transmittance of grapheme material, the grid line shielded area that can effectively alleviate current solar cell existence accounts for the problems such as battery effective area of shining light is large, electrode noble metal cost is higher.
For achieving the above object, technical scheme provided by the utility model is: a kind of Graphene solar cell, include anti-reflection film, multi-layer graphene front electrode, single-layer graphene grid line, epitaxial wafer, multi-layer graphene backplate, wherein, described anti-reflection film, single-layer graphene grid line, epitaxial wafer, multi-layer graphene backplate are cascading from top to bottom; Described multi-layer graphene front electrode correspondence is arranged on epitaxial wafer, and with the same side of described single-layer graphene grid line in epitaxial wafer; The region that described multi-layer graphene front electrode forms round single-layer graphene grid line, and coupled; On described multi-layer graphene front electrode, be provided with metal contact, and draw metal lead wire by described metal contact.
The width of described single-layer graphene grid line is 2～15um, and grating spacing is 80～150um.
The thickness of described multi-layer graphene front electrode and multi-layer graphene backplate is 1.5～20um.
Described epitaxial wafer is single-unit or multi-section structure, and its material therefor is the one or more combination in Si, Ge, InAs, GaAs, GaInAsN, ZnSeS, GaInP, InGaN, AlGaInP, and its substrate material therefor is Si, Ge, SiC, Al
2o
3in one.
Described anti-reflection film is sandwich construction, and it is MgF
2/ ZnS, Ta
2o
5/ A1
2o
3, Ta
2o5/SiO
2, TiO
2/ SiO
2in one.
Compared with prior art, tool has the following advantages and beneficial effect the utility model:
1, compared with the noble metal grid line materials such as present gold and silver used, Graphene is almost completely transparent, only absorb 2.3% light, therefore, adopt single-layer graphene as solar cell grid line, can reduce significantly grid line width and thickness, add the high light transmittance of grapheme material itself, can effectively reduce the light absorption of grid line, improve battery conversion efficiency;
2, adopt multi-layer graphene material to replace thick gold and silver noble metal electrode as electrode, can significantly reduce costs.
Brief description of the drawings
Fig. 1 is the front view of Graphene solar cell described in the utility model.
Fig. 2 is the cutaway view of Graphene solar cell described in the utility model.
Embodiment
Below in conjunction with specific embodiment, the utility model is described in further detail.
Shown in Fig. 1 and Fig. 2, Graphene solar cell described in the present embodiment, be specially rectangular configuration, include anti-reflection film 1, multi-layer graphene front electrode 2, single-layer graphene grid line 3, epitaxial wafer 4, multi-layer graphene backplate 5, wherein, described anti-reflection film 1, single-layer graphene grid line 3, epitaxial wafer 4, multi-layer graphene backplate 5 are cascading from top to bottom; Described multi-layer graphene front electrode 2 correspondences are arranged on epitaxial wafer 4, and with the same side of described single-layer graphene grid line 3 in epitaxial wafer 4; The region (being specially the border circular areas in figure) that described multi-layer graphene front electrode 2 forms round single-layer graphene grid line 3, and coupled; On described multi-layer graphene front electrode 2, be provided with four metal contacts 6, and draw respectively four strip metal lead-in wires 7 by described four metal contacts 6, described four metal contacts 6 are distributed in four angles place of multi-layer graphene front electrode 2, as shown in Figure 1.
The about 0.34nm of thickness of described single-layer graphene grid line 3, grid line width is 2～15um, grating spacing is 80～150um.
The thickness of described multi-layer graphene front electrode 2 and multi-layer graphene backplate 5 is 1.5～20um.
Described epitaxial wafer 4 is single-unit or multi-section structure, and its material therefor is the one or more combination in Si, Ge, InAs, GaAs, GaInAsN, ZnSeS, GaInP, InGaN, AlGaInP, and its substrate material therefor is Si, Ge, SiC, Al
2o
3in one.
Described anti-reflection film 1 is sandwich construction, is specially MgF
2/ ZnS, Ta
2o
5/ A1
2o
3, Ta
2o5/SiO
2, TiO
2/ SiO
2in one.
Be below the preparation method of the above-mentioned Graphene solar cell of the present embodiment, its concrete condition is as follows:
1) epitaxial wafer 4 of use MOCVD or MBE growth single-unit or more piece solar cell, its substrate material therefor is Si, Ge, SiC, Al
2o
3in one.
2) Coating glue protect is carried out in the back side of described epitaxial wafer 4, surface acid-washing is carried out in its front, wherein, described pickling adopts following two step cleaning processes: 1. organic solvent (toluene, acetone, alcohol etc.) → deionized water → inorganic acid (hydrochloric acid, sulfuric acid, nitric acid, chloroazotic acid etc.) → hydrofluoric acid → deionized water; 2. alkaline hydrogen peroxide solution → deionized water → acid hydrogenperoxide steam generator → deionized water.
3) adopt micromechanics stripping method or CVD method, graphene film is transferred to described epitaxial wafer 4 surfaces, or is grown directly upon described epitaxial wafer 4 surfaces.
4) described epitaxial wafer 4 is carried out to positive even glue successively, adopt subsequently the method etching photoresist of optical lithography or electron-beam direct writing, and with developing liquid developing, form the grid line figure being formed by photoresist.
5) with the Matrix of oxygen plasma or utilize the cull of the ultraviolet UV of oxygen except glue instrument is removed grid region.
6) utilize the grid line figure of photoresist formation as etching mask; with the oxygen source in Matrix, RIE etching machine, UV instrument; by clean the Graphene etching beyond grid line graphics field; and in the hot acetone of 50 DEG C, soak the photoresist shielding of removing for 30 minutes on grid line figure, form required single-layer graphene grid line 3.
7) described epitaxial wafer 4 is carried out to positive even glue, adopt subsequently the method etching photoresist of optical lithography or electron-beam direct writing, and with developing liquid developing, form the table top figure being formed by photoresist.
8) with the Matrix of oxygen plasma or utilize the ultraviolet UV of oxygen to remove the cull of table top figure top except glue instrument.
9) adopt H
3pO
4be that corrosive liquid or citric acid are corrosive liquid, table top is carried out to wet etching, the table top figure that photoresist is formed is transferred on described epitaxial wafer 4, forms mesa-isolated.
10) described epitaxial wafer 4 is carried out to positive even glue, adopt subsequently the method etching photoresist of optical lithography or electron-beam direct writing, and with developing liquid developing, form the front electrode figure being formed by photoresist.
11) with the Matrix of oxygen plasma or utilize the ultraviolet UV of oxygen to remove the cull of front electrode figure top except glue instrument.
12) the multi-layer graphene material of processing through overdoping or alkali carbonate is placed on the front electrode figure that photoresist forms, and in the hot acetone of 50 DEG C, soak and within 30 minutes, remove front electrode figure photoresist and multi-layer graphene material in addition, form required multi-layer graphene front electrode 2.
13) the multi-layer graphene material of processing through overdoping or alkali carbonate is placed in to the back side of described epitaxial wafer, forms required multi-layer graphene backplate 5.
14) described epitaxial wafer 4 is carried out to positive even glue successively, adopt subsequently the method etching photoresist of optical lithography or electron-beam direct writing, and with developing liquid developing, form the anti-reflection film figure being formed by photoresist.
15) with the Matrix of oxygen plasma or utilize the ultraviolet UV of oxygen to remove the cull of anti-reflection film figure top except glue instrument.
16) adopt CVD method to prepare anti-reflection film on described single-layer graphene grid line 3, described anti-reflection film is sandwich construction, can be MgF
2/ ZnS, Ta
2o
5/ A1
2o
3, Ta
2o5/SiO
2, TiO
2/ SiO
2in one; And in the hot acetone of 50 DEG C, soak and within 30 minutes, remove anti-reflection film photoresist in addition, form required anti-reflection film 1.
17) described epitaxial wafer is carried out positive even glue, adopts the method etching photoresist of optical lithography or electron-beam direct writing, and with developing liquid developing, form the Metal Contact dot pattern being formed by photoresist.
18) with the Matrix of oxygen plasma or utilize the ultraviolet UV of oxygen to remove the cull of Metal Contact dot pattern top except glue instrument.
19) utilize photoresist as etching mask, with using oxygen source in Matrix, RIE etching machine, UV instrument, the grapheme material of Metal Contact dot pattern is carried out to etching, destroy the lattice structure of grapheme material simultaneously, form defect.
20) adopt electron beam evaporation or sputter at depositing metal on the Metal Contact dot pattern that forms defect; Described metal is the one in Ti/Au, Ti/Pt/Au, Ti/Al/Au, Ni, Ni/Au, Cr/Au, Pd, Ti/Pd/Au, Pd/Au.
21) adopt photoresist and the metal of hot acetone stripping metal contact point figure with exterior domain, sample is immersed in the hot acetone of 50 DEG C to 30 minutes, after immersion except the metal in drain contact region, source, other local metal all comes off along with the dissolving of photoresist, carries out subsequently annealing in process, and annealing temperature is 600-900 DEG C, the annealing time time is 30-200s, annealing atmosphere can be N2 and H2, forms ohmic contact, as the metal contact of metal and multi-layer graphene electrode.
22) draw metal lead wire from described metal contact, so far just complete the preparation of Graphene solar cell.
In sum, adopting after above scheme, adopt single-layer graphene as solar cell grid line, can reduce significantly grid line width and thickness, the high light transmittance of adding grapheme material itself (is almost completely transparent, only absorb 2.3% light), can effectively reduce the light absorption of grid line, thereby improve battery conversion efficiency, simultaneously, adopt multi-layer graphene material to replace thick gold and silver noble metal electrode as electrode, can significantly reduce costs.This compared to existing technology, the utility model can effectively be avoided the absorption of common metal grid line to light, thus improve solar battery efficiency, reliability is higher, is worthy to be popularized.
The examples of implementation of the above are only the preferred embodiment of the utility model, not limit practical range of the present utility model with this, therefore the variation that all shapes according to the utility model, principle are done all should be encompassed in protection range of the present utility model.
Claims (5)
1. a Graphene solar cell, it is characterized in that: include anti-reflection film (1), multi-layer graphene front electrode (2), single-layer graphene grid line (3), epitaxial wafer (4), multi-layer graphene backplate (5), wherein, described anti-reflection film (1), single-layer graphene grid line (3), epitaxial wafer (4), multi-layer graphene backplate (5) are cascading from top to bottom; It is upper that described multi-layer graphene front electrode (2) correspondence is arranged on epitaxial wafer (4), and with the same side of described single-layer graphene grid line (3) in epitaxial wafer (4); The region that described multi-layer graphene front electrode (2) forms round single-layer graphene grid line (3), and coupled; On described multi-layer graphene front electrode (2), be provided with metal contact (6), and draw metal lead wire (7) by described metal contact (6).
2. a kind of Graphene solar cell according to claim 1, is characterized in that: the width of described single-layer graphene grid line (3) is 2～15um, grating spacing is 80～150um.
3. a kind of Graphene solar cell according to claim 1, is characterized in that: the thickness of described multi-layer graphene front electrode (2) and multi-layer graphene backplate (5) is 1.5～20um.
4. a kind of Graphene solar cell according to claim 1, is characterized in that: described epitaxial wafer (4) is single-unit or multi-section structure.
5. a kind of Graphene solar cell according to claim 1, is characterized in that: described anti-reflection film (1) is sandwich construction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420034861.7U CN203733813U (en) | 2014-01-20 | 2014-01-20 | Graphene solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420034861.7U CN203733813U (en) | 2014-01-20 | 2014-01-20 | Graphene solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203733813U true CN203733813U (en) | 2014-07-23 |
Family
ID=51203861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420034861.7U Withdrawn - After Issue CN203733813U (en) | 2014-01-20 | 2014-01-20 | Graphene solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203733813U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746013A (en) * | 2014-01-20 | 2014-04-23 | 广东瑞德兴阳光伏科技有限公司 | Graphene solar cell and preparation method thereof |
| CN106784068A (en) * | 2016-12-09 | 2017-05-31 | 中国科学院微电子研究所 | A kind of Graphene/gallium arsenide solar cell |
| CN110391250A (en) * | 2019-06-21 | 2019-10-29 | 长江存储科技有限责任公司 | A kind of three-dimensional storage and preparation method thereof |
-
2014
- 2014-01-20 CN CN201420034861.7U patent/CN203733813U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746013A (en) * | 2014-01-20 | 2014-04-23 | 广东瑞德兴阳光伏科技有限公司 | Graphene solar cell and preparation method thereof |
| CN103746013B (en) * | 2014-01-20 | 2016-03-30 | 瑞德兴阳新能源技术有限公司 | A kind of Graphene solar cell and preparation method thereof |
| CN106784068A (en) * | 2016-12-09 | 2017-05-31 | 中国科学院微电子研究所 | A kind of Graphene/gallium arsenide solar cell |
| CN110391250A (en) * | 2019-06-21 | 2019-10-29 | 长江存储科技有限责任公司 | A kind of three-dimensional storage and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103746013B (en) | A kind of Graphene solar cell and preparation method thereof | |
| JP6404474B2 (en) | Solar cell and solar cell module | |
| CN109216509A (en) | A kind of interdigitation back contacts heterojunction solar battery preparation method | |
| TW201703277A (en) | Preparation method of localized back contact solar cell | |
| CN102157624B (en) | Silicon solar cell and manufacturing method thereof | |
| CN103703567A (en) | Solar cell, solar cell manufacturing method, and solar cell module | |
| JP6568518B2 (en) | Crystalline silicon solar cell manufacturing method and crystalline silicon solar cell module manufacturing method | |
| TWI727728B (en) | Thin film photovoltaic cell series structure and preparation process of thin film photovoltaic cell series | |
| CN104241415A (en) | Graphene/gallium arsenide solar cell and manufacturing method thereof | |
| CN108899375A (en) | A kind of preparation method of silicon based hetero-junction photovoltaic cell | |
| JP5584845B1 (en) | SOLAR CELL, MANUFACTURING METHOD THEREOF, AND SOLAR CELL MODULE | |
| CN203733813U (en) | Graphene solar cell | |
| JP2014199875A (en) | Solar battery, method of manufacturing the same, and solar battery module | |
| CN104716209A (en) | Solar cell based on silicon substrate nanowire and preparing method thereof | |
| CN103730522A (en) | Photovoltaic conversion structure, solar battery with photovoltaic conversion structure and manufacturing method of photovoltaic conversion structure | |
| US9761752B2 (en) | Solar cell, solar cell module, method for manufacturing solar cell, and method for manufacturing solar cell module | |
| CN107093649B (en) | A kind of preparation method of HJT photovoltaic cell | |
| CN105470347A (en) | PERC (PowerEdge RAID Controller) battery manufacturing method | |
| CN103390675A (en) | Crystalline silicon solar cell and manufacturing method thereof | |
| CN103746014B (en) | ITO grid line solar cell and preparation method thereof | |
| CN106449790A (en) | Graphene/gallium arsenide solar battery | |
| CN110476256B (en) | Solar cell, solar cell module, and method for manufacturing solar cell | |
| CN106449791B (en) | A kind of preparation method of graphene/gallium arsenide solar cell | |
| JP2011077454A (en) | Crystal silicon system solar cell and method of manufacturing the same | |
| CN203733812U (en) | ITO grating line solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140723 Effective date of abandoning: 20160330 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20140723 Effective date of abandoning: 20160330 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |