CN203733812U - ITO grating line solar cell - Google Patents
ITO grating line solar cell Download PDFInfo
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- CN203733812U CN203733812U CN201420034827.XU CN201420034827U CN203733812U CN 203733812 U CN203733812 U CN 203733812U CN 201420034827 U CN201420034827 U CN 201420034827U CN 203733812 U CN203733812 U CN 203733812U
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- ito
- grid line
- solar cell
- metal electrode
- epitaxial wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses an ITO grating line solar cell which includes an antireflection film, a cross ITO gating line, an epitaxial wafer, a back-side metal electrode, and a front-side metal electrode; the antireflection film, the cross ITO gating line, the epitaxial wafer, and the back-side metal electrode are sequentially laminated from top to bottom; the front-side metal electrode is correspondingly arranged on the epitaxial wafer, and is arranged at the same side of the epitaxial wafer as the cross ITO grating line is; and the front-side metal electrode circles around and is connected with an area formed by the cross ITO gating line. The ITO grating line solar cell adopts the ITO as the solar cell grating line, and can effectively avoid the light reflection and absorption by a conventional metal grating line, so that the area under the cross ITO grating line can also absorb the light and carry out the photoelectric conversion, and the efficiency of solar cell is greatly improved; and at the same time, the ITO is used to replace the precious metals such as gold and silver as the gating line, so as to greatly reduce the cost.
Description
Technical field
The utility model relates to the technical field of solar cell, refers in particular to a kind of ITO grid line solar cell.
Background technology
Along with the development of modern industry; global energy crisis and atmosphere polluting problem become increasingly conspicuous; solar energy has been subject to the attention of more and more national as desirable regenerative resource, carry out solar cell research, development photovoltaic generation industry has very important significance to the sustainable development of national energy.At present, the subject matter facing of solar cell is that photoelectric conversion efficiency is lower, and cost performance is not high, can not meet extensive civilian demand.At present, the transformation efficiency of commercial monocrystalline silicon battery is about 16%-20%, and polycrystal silicon cell is about 14%-16%; On Ge substrate, under 500 times of optically focused of GaInP/GaAs/Ge three-joint solar cell of epitaxial growth Lattice Matching, transformation efficiency exceedes 41%, far above crystal silicon battery, and has further room for promotion.
The grid line of solar cell and electrode play a part to collect and transmission photo-generated carrier, and optimizing grid line and electrode structure and technique is one of important technology direction improving solar battery efficiency.At present, mostly adopt plated metal high annealing to form ohmic contact and make more piece solar cell surface grid line and electrode.But opaque metal grid lines can reflect and absorb incident ray, thereby reduce the effective area of shining light of solar cell, and then reduce monolithic battery power output.Under normal circumstances, grid line shielded area accounts for 5%～15% of battery effective area of shining light.In order to reduce absorption and the reflection of grid line and electrode pair luminous energy, effectively utilize more luminous energy, the correlative study of transparent grid line and electrode becomes one of technical field of solar batteries focus.
The Main Ingredients and Appearance of ITO rete is tin indium oxide, and its energy gap is 3.5-4.3eV, is greater than 85% at the light transmission rate of visible-range, and resistivity is less than 10-3 Ω cm.Adopt ITO grid line, can avoid metal grid lines to reflection of light and absorption, thereby increase extinction region area, improve battery conversion efficiency.Simultaneously, ITO preparation method maturation, and possesses commodity production standard, now being widely used in flat-panel display device, solar cell, specific function window coating and other field of photoelectric devices, is the unique transparency conductive electrode materials of various types of flat panel display device such as current LCD, PDP, OLED, touch-screen.Graphene has the stability of height, can be widely used in various environments for use.Alkaline-resisting is in 10% sodium hydroxide solution after 5 minutes for immersing 60 DEG C, concentration, and ITO layer square resistance changing value is no more than 10%.Acidproof is in 6% hydrochloric acid solution after 5 minutes for immersing 250C, concentration, and ITO layer square resistance changing value is no more than 10%.Resistance to solvent is to add in the cleaning fluid that 3 points of EC101 are mixed with after 5 minutes at 250C, acetone, absolute ethyl alcohol or 100 parts of deionized waters, and ITO layer square resistance changing value is no more than 10%.Adhesive force: be attached to film surface and tear rapidly at tape sticker, rete not damaged; Or even tear after three times, ITO layer square resistance changing value is no more than 10%.Thermal stability: in the air of 300 DEG C, heat after 30 minutes, ITO conducting film square resistance should be not more than 300% of former square resistance.Lower resistivity (being about 10-4 Ω cm) visible light transmissivity can reach more than 85%.Its high light transmittance and good conductivity, and high stability is suitable as solar cell grid line very much.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, a kind of ITO grid line solar cell is provided, utilize high conductivity and the high light transmittance of ITO material, the grid line shielded area that can effectively alleviate current solar cell existence accounts for the problems such as battery effective area of shining light is large, grid line noble metal cost is higher.
For achieving the above object, technical scheme provided by the utility model it be: a kind of ITO grid line solar cell, includes anti-reflection film, intersection ITO grid line, epitaxial wafer, back metal electrode, front metal electrode; Wherein, described anti-reflection film, intersection ITO grid line, epitaxial wafer, back metal electrode are cascading from top to bottom; Described front metal electrode pair should be arranged on epitaxial wafer, and with the described same side of ITO grid line in epitaxial wafer that intersect; The region that described front metal electrode forms round intersection ITO grid line, and coupled.
The width of described intersection ITO grid line is 2～15um, and grating spacing is 80～150um, and grid line thickness is 1～5um.
Described intersection ITO grid line is right-angled intersection ITO grid line.
The thickness of described back metal electrode and front metal electrode is 0.5～5um.
The metal of described back metal electrode and front metal electrode is the one in Ti/Au, Ti/Pt/Au, Ti/Al/Au, Ni, Ni/Au, Cr/Au, Pd, Ti/Pd/Au, Pd/Au.
Described epitaxial wafer is single-unit or multi-section structure, and its material therefor is the one or more combination in Si, Ge, InAs, GaAs, GaInAsN, ZnSeS, GaInP, InGaN, AlGaInP, and its substrate material therefor is the one in Si, Ge, SiC, Al2O3.
Described anti-reflection film is sandwich construction, and it is the one in MgF2/ZnS, Ta2O5/A12O3, Ta2O5/SiO2, TiO2/SiO2.
Compared with prior art, tool has the following advantages and beneficial effect the utility model:
1, compared with the precious metal materials such as present gold and silver used, ITO energy gap is 3.5-4.3eV, is greater than 85% at the light transmission rate of visible-range; Therefore, adopt ITO as solar cell grid line, can effectively avoid common metal grid line to reflection of light and absorption, make the area of grid line below also can participate in light absorption and carry out opto-electronic conversion, thereby improve solar battery efficiency;
2, adopt ITO to replace the noble metals such as gold and silver as grid line, can significantly reduce costs.
Brief description of the drawings
Fig. 1 is the front view of ITO grid line solar cell described in the utility model.
Fig. 2 is the cutaway view of ITO grid line solar cell described in the utility model.
Embodiment
Below in conjunction with specific embodiment, the utility model is described in further detail.
Shown in Fig. 1 and Fig. 2, the ITO grid line solar cell described in the present embodiment, is specially rectangular configuration, includes anti-reflection film 1, intersects ITO grid line 2, epitaxial wafer 3, back metal electrode 4, front metal electrode 5; Wherein, described anti-reflection film 1, intersection ITO grid line 2, epitaxial wafer 3, back metal electrode 4 are cascading from top to bottom; Described front metal electrode 5 correspondences are arranged on epitaxial wafer 3, and with the described same side of ITO grid line 2 in epitaxial wafer 3 that intersect; The region (being specially the border circular areas in Fig. 1) that described front metal electrode 5 forms round intersection ITO grid line 2, and coupled.
Described intersection ITO grid line 2 is right-angled intersection ITO grid line, and its width is 2～15um, and grating spacing is 80～150um, and grid line thickness is 1～5um.
The thickness of described back metal electrode 4 and front metal electrode 5 is 0.5～5um, and its metal is the one in Ti/Au, Ti/Pt/Au, Ti/Al/Au, Ni, Ni/Au, Cr/Au, Pd, Ti/Pd/Au, Pd/Au.
Described epitaxial wafer 3 is single-unit or multi-section structure, its material therefor is the one or more combination in Si, Ge, InAs, GaAs, GaInAsN, ZnSeS, GaInP, InGaN, AlGaInP, and its substrate material therefor is the one in Si, Ge, SiC, Al2O3.
Described anti-reflection film 1 is sandwich construction, and it is the one in MgF2/ZnS, Ta2O5/A12O3, Ta2O5/SiO2, TiO2/SiO2.
Be below the preparation method of the above-mentioned ITO grid line of the present embodiment solar cell, its concrete condition is as follows:
1) epitaxial wafer 3 of use MOCVD or MBE growth single-unit or more piece solar cell, its substrate material therefor is the one in Si, Ge, SiC, Al2O3.
2) Coating glue protect is carried out in the back side of described epitaxial wafer 3, surface acid-washing is carried out in its front, wherein, described pickling adopts following two step cleaning processes: 1. organic solvent (toluene, acetone, alcohol etc.) → deionized water → inorganic acid (hydrochloric acid, sulfuric acid, nitric acid, chloroazotic acid etc.) → hydrofluoric acid → deionized water; 2. alkaline hydrogen peroxide solution → deionized water → acid hydrogenperoxide steam generator → deionized water.
3) described epitaxial wafer 3 is carried out to positive even glue, adopt subsequently the method etching photoresist of optical lithography or electron-beam direct writing, and with developing liquid developing, form the grid line figure being formed by photoresist.
4) with the Matrix of oxygen plasma or utilize the cull of the ultraviolet UV of oxygen except glue instrument is removed grid region.
5) utilize the grid line figure of photoresist formation as mask; use magnetron sputtering method, pulsive electroplating or arc ion plating to prepare ito thin film; and in the hot acetone of 50 DEG C, soak the photoresist shielding removed for 30 minutes on grid line figure and on ito thin film, form required intersection ITO grid line 2.
6) described epitaxial wafer 3 is carried out to positive even glue, adopt subsequently the method etching photoresist of optical lithography or electron-beam direct writing, and with developing liquid developing, form the table top figure being formed by photoresist.
7) with the Matrix of oxygen plasma or utilize the ultraviolet UV of oxygen to remove the cull of table top figure top except glue instrument.
8) adopting H3PO4 is that corrosive liquid or citric acid are corrosive liquid, and table top is carried out to wet etching, and the table top figure that photoresist is formed is transferred on described epitaxial wafer 3, forms mesa-isolated.
9) described epitaxial wafer 3 is carried out to positive even glue, adopt subsequently the method etching photoresist of optical lithography or electron-beam direct writing, and with developing liquid developing, form the front electrode figure being formed by photoresist.
10) with the Matrix of oxygen plasma or utilize the ultraviolet UV of oxygen to remove the cull of front electrode figure top except glue instrument.
11) adopt magnetron sputtering method or electron beam evaporation plating legal system for metallic film, and in the hot acetone of 50 DEG C, soak and within 30 minutes, remove front electrode figure photoresist and metal in addition, form required front metal electrode 5.
12) adopt magnetron sputtering method or electron beam evaporation plating legal system for metallic film, form required back metal electrode 4.
13) carry out annealing in process, annealing temperature is 600-900 DEG C, and the annealing time time is 30-200s, and annealing atmosphere can be N2 and H2, forms the ohmic contact of described intersection ITO grid line 2, front metal electrode 5, back metal electrode 4.
14) described epitaxial wafer 3 is carried out to positive even glue, adopt subsequently the method etching photoresist of optical lithography or electron-beam direct writing, and with developing liquid developing, form the anti-reflection film figure being formed by photoresist.
15) with the Matrix of oxygen plasma or utilize the ultraviolet UV of oxygen to remove the cull of anti-reflection film figure top except glue instrument.
16) adopt magnetron sputtering method or electron beam evaporation plating method to prepare anti-reflection film above described intersection ITO grid line 2, and in the hot acetone of 50 DEG C, soak and within 30 minutes, remove anti-reflection film figure photoresist and anti-reflection film in addition, obtain the anti-reflection film 1 of desired zone size.
17) can adopt optics cutting or machine cuts method, the epitaxial wafer that completes above-mentioned steps is cut, form discrete solar battery chip, so far just complete the preparation of ITO grid line solar cell.
In sum, adopting after above scheme, the utility model adopts ITO as solar cell grid line, compared with the precious metal materials such as present gold and silver used, because ITO energy gap is 3.5-4.3eV, light transmission rate at visible-range is greater than 85%, therefore, adopt ITO as solar cell grid line, adjust its spacing and width, ensureing on the basis of electric conductivity, choose the intersection ITO grid line of area minimum to improve monolithic solar cell effective area of shining light, choose ITO grid line absorption to light with reduction ITO grid line that thickness is the thinnest, thereby can avoid well common metal grid line to reflection of light and absorption, the area of ITO grid line below of making to intersect also can participate in light absorption and carry out opto-electronic conversion, thereby greatly improve solar battery efficiency, meanwhile, adopt ITO to replace the noble metals such as gold and silver as grid line, can significantly reduce costs.This compared to existing technology, reliability of the present utility model is higher, and can significantly reduce costs, and is worthy to be popularized.
The examples of implementation of the above are only the preferred embodiment of the utility model, not limit practical range of the present utility model with this, therefore the variation that all shapes according to the utility model, principle are done all should be encompassed in protection range of the present utility model.
Claims (6)
1. an ITO grid line solar cell, is characterized in that: include anti-reflection film (1), intersection ITO grid line (2), epitaxial wafer (3), back metal electrode (4), front metal electrode (5); Wherein, described anti-reflection film (1), intersection ITO grid line (2), epitaxial wafer (3), back metal electrode (4) are cascading from top to bottom; It is upper that described front metal electrode (5) correspondence is arranged on epitaxial wafer (3), and with the described same side of ITO grid line (2) in epitaxial wafer (3) that intersect; The region that described front metal electrode (5) forms round intersection ITO grid line (2), and coupled.
2. a kind of ITO grid line solar cell according to claim 1, is characterized in that: the width of described intersection ITO grid line (2) is 2～15um, and grating spacing is 80～150um, and grid line thickness is 1～5um.
3. a kind of ITO grid line solar cell according to claim 1 and 2, is characterized in that: described intersection ITO grid line (2) is right-angled intersection ITO grid line.
4. a kind of ITO grid line solar cell according to claim 1, is characterized in that: the thickness of described back metal electrode (4) and front metal electrode (5) is 0.5～5um.
5. a kind of ITO grid line solar cell according to claim 1, is characterized in that: described epitaxial wafer (3) is single-unit or multi-section structure.
6. a kind of ITO grid line solar cell according to claim 1, is characterized in that: described anti-reflection film (1) is sandwich construction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420034827.XU CN203733812U (en) | 2014-01-20 | 2014-01-20 | ITO grating line solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420034827.XU CN203733812U (en) | 2014-01-20 | 2014-01-20 | ITO grating line solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203733812U true CN203733812U (en) | 2014-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420034827.XU Withdrawn - After Issue CN203733812U (en) | 2014-01-20 | 2014-01-20 | ITO grating line solar cell |
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| Country | Link |
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| CN (1) | CN203733812U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746014A (en) * | 2014-01-20 | 2014-04-23 | 广东瑞德兴阳光伏科技有限公司 | ITO grid line solar cell and preparation method thereof |
-
2014
- 2014-01-20 CN CN201420034827.XU patent/CN203733812U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746014A (en) * | 2014-01-20 | 2014-04-23 | 广东瑞德兴阳光伏科技有限公司 | ITO grid line solar cell and preparation method thereof |
| CN103746014B (en) * | 2014-01-20 | 2016-03-30 | 瑞德兴阳新能源技术有限公司 | ITO grid line solar cell and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140723 Effective date of abandoning: 20160330 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20140723 Effective date of abandoning: 20160330 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |